CN106486447A - Copper alloy bonding wire - Google Patents
Copper alloy bonding wire Download PDFInfo
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- CN106486447A CN106486447A CN201610390155.XA CN201610390155A CN106486447A CN 106486447 A CN106486447 A CN 106486447A CN 201610390155 A CN201610390155 A CN 201610390155A CN 106486447 A CN106486447 A CN 106486447A
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- copper alloy
- closing line
- bonding wire
- mass ppm
- copper
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
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- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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Abstract
The invention provides a kind of copper alloy bonding wire, the crystal grain of the copper alloy of its unit sectional area is 50 250, and its maximum particle diameter is less than the 1/3 of bond wire diameter, and non-directional all below 40% for specific direction.
Description
Technical field
With regard to a kind of copper alloy bonding wire, it is suitable for being used for IC chip electrode and the outside of semiconductor device the present invention
The substrate connection of lead frame etc..
Background technology
In general, among copper closing line engages with the first of electrode, being the mode using referred to as ball bonding;Connect in copper
Among zygonema and the wedge bond with the distribution on circuit wiring substrate for the quasiconductor, it is the mode using referred to as wedge bonding.The
One joint, is right from torch electrode (torch electrode) in the balling that discharges (EFO, electronic frame off) mode
The front end of wire rod applies thermic arc, so that the front end of wire rod forms the positive ball being referred to as soldered ball (FAB).Then,
With capillary (capillary), this FAB is pressed on the aluminum pad through heating within the temperature range of 150-300 DEG C, one
Side applies ultrasound (ultrasound wave), so that closing line is engaged with aluminum pad.
Then, extracting closing line out makes capillary rise, and towards lead frame drafting loop while by capillary
Move to wedge bonding.If being illustrated with illustrating, the wedge bonding being carried out with capillary is then as shown in figure 1, can be by closing line 1
Wedge bonding is in lead frame 3.Now, the end of the closing line 1 through wedge bonding is flattened by the leading section of capillary 2, as Fig. 2 institute
Show, the wire area of joint is changed into minimum.Furthermore, excise closing line 1 afterwards.If with positioned at capillary 2 top
Wire rod clamper 4 is clamped closing line 1 and is pulled upwardly, then as shown in figure 3, residual closing line 1 before
End part, wire rod can simply be cut off.
Then, by capillary movement to the first joint, this step is omitted in the example shown.Then, in electric discharge torch (discharge
Torch position) sparks over, and forms melting soldered ball (FAB) in the front end of closing line, so that closing line and aluminum pad
Carry out the first joint.Repeat such joint to circulate, sequentially will be connected between pad and lead frame 3 by closing line 1.
Closing line 1 is flattened by the leading section of the capillary 2 on the left of Fig. 1, therefore cut-off closing line 1 is according to set poplar
Family name's coefficient and deform.This deformed shape can be different from the situation of copper (Cu) in the situation of golden (Au).The situation of golden closing line
Under, though for soft fine structure firmly, therefore following problems being deformed into J-shaped shape will not be produced.
There is the noble metal closing line of dual cored structure, equally will not produce problem.Furthermore it is thus proposed that one
Plant closing line, it is the property that application easily forms the wire rod that cross-section structure is dual core.For example, Japanese Unexamined Patent Application
A kind of gold closing line is disclosed, it constitutes fibrous tissue (111) and is present in line in the claims 4 of 59-48948 publication
Among material core and fibrous tissue (100) is present in the form among wire rod top layer.
On the other hand, the wire rod being made up of simple metal or copper (Cu) alloy of copper (Cu), if carry out after continuously casting
Continuous bracing wire, then can form different fibrous tissue depending on total section slip in outer part and central part, and easy
Form the wire rod that cross-section structure is dual core.If total section slip is 96-99%, privileged direction becomes<111>
With<100>(nineteen ninety, plastic working association of Japan compiled《Stretch process》Page 85).Repeatedly poor energy (stacking fault energy)
Play an important role (N.Brown Trans.Met.Soc.AIME, volume 221 (1961) page 236) to this.Therefore,
The wire rod being made up of fine copper or copper alloy, is typically carried out intermediate annealing.The period of intermediate annealing is critically important, and one
As think the tolerance limit of 1 bracing wire processing about near 95%, and in order to avoid in 2 processing at the processing initial stage
Stage produces { hkl }<111>Direction, insertion intermediate annealing step is particularly significant.(rice number is directly inferior, Japanese metallography
Meeting magazine volume 47 No. 3 (nineteen eighty-three) page 266).
Also, disclosing a kind of alloy wire in the claims 1 of Japanese Unexamined Patent Publication 2013-139635 publication, it is by selecting
In the group of self-contained silver-billon, silver-palladium alloy and Yin-gold-palldium alloy, the material of any one is constituted, this alloy
Wire rod has the polycrystalline structure of face-centered cubic lattice, and comprises multiple crystal grain, and the central part of this alloy wire comprises elongated
Crystal grain or equi-axed crystal, the other parts of this alloy wire are made up of equi-axed crystal, comprise this crystalline substance of annealing twin
The quantity of grain is more than the 20% of this crystal grain total amount of this alloy wire.
Also, Japan also discloses a kind of closing line in the claims 1 of public No. 2013/111642 publication of table patent again, its
There is the closing line of core with copper as main component and palladium extended layer, wherein:The center of this core has copper in axial direction
The bacillar structure of upper extension.
Also, disclose a kind of semiconductor device gold in the claims 1 of Japanese Unexamined Patent Publication 2004-31469 publication engaging
Line, wherein:In the grain structure of the long side direction section of closing line, using the radius of wire rod as R, will be from this line
Material center to R/2 part as central part, using when outside it as outer part, for " the long side of wire rod in central part
Among the crystallization direction in direction, have [111] direction crystal grain area with respect to the crystal grain with [100] direction face
Long-pending ratio Rc ", and " among the crystallization direction of wire rod long side direction in outer part, there is the crystal grain in [111] direction
Ratio Rs of the area with respect to the crystal grain with [100] direction for the area ", both difference (difference) ratios exhausted
It is more than 30% to value | 1-Rc/Rs | × 100 (%).
Furthermore, propose a kind of semiconductor device in the claims 1 of Japanese Unexamined Patent Publication 2009-140942 publication and engage
Line, it comprises on the core being made up of conductive metal and this core with the metal different from core as main component
The bonding wire for semiconductor device of thin extended layer, wherein:The metal of this thin extended layer is face-centered cubic crystal, and this is thin to prolong
Stretch the crystallization direction of long side direction in the crystal plane of layer surface<hkl>Among,<111>With<100>To occupy ratio all little
In 50%;A kind of bonding wire for semiconductor device is proposed in the claims 1 of Japanese Unexamined Patent Publication 2009-158931 publication,
It comprises on the core being made up of conductive metal and this core with the metal different from this core as main component
The bonding wire for semiconductor device of thin extended layer, wherein:The metal of this thin extended layer is face-centered cubic crystal, and this is thin to prolong
Stretch the crystallization direction of long side direction in the crystal plane of layer surface<hkl>Among,<111>Occupy ratio be more than 50%.
If however, cutting off wire rod after copper (Cu) closing line is carried out wedge bonding, as shown in figure 4, have somewhat curved
The J-shaped problem of bent one-tenth.
Additionally, in copper closing line, line footpath, slightly in the case of 25 μm, is also almost seldom seen and is deformed into this J word
The wire rod of shape.If but make as little as 20 μm of the line footpath of closing line, and so that it is attenuated and engaging speed accelerates, then deform
The wire rod becoming J-shaped starts appearance.If closing line has such fore-end, can lead to back when drawing loop
Road shape is crooked.Also, it has, " spark current cannot smoothly hit the front end of closing line, and become and so that FAB is become
The situation of the reason become flat abnormity soldered ball ".If also, J-shaped deformation is too serious, become as sent out in the past
The deformation of existing zigzag, and the reason become capillary and block.
Also, being the copper conjunction that copper (Cu) of purity more than 99.9% etc. is constituted by the phosphorus (P) and remaining part of 10-500ppm
Golden closing line, the denseization layer of phosphorus (P) is easily in closing line surface segregation, and is difficult to obtain the mechanical property of homogenizing, this
For another problem (Japanese Unexamined Patent Publication 7-122564 publication).
In order to solve these problems, it was by improving engagement device reply in the past, but these ways were not smooth.That is,
Be in the past first close after wedge bonding wire rod clamper and by closing line toward above somewhat stretch.Form contracting on making closing line
In the state of neck portion, temporarily unclamp wire rod clamper.Then, closure wire rod clamper strongly pulls wire rod again,
So that closing line to be cut off (Japanese Unexamined Patent Publication 2007-66991 publication) from this necking section.It was to be pressed from both sides by this wire rod in the past
The operation of holder is solving the defect of the engineering propertiess of closing line.
However, the improvement that conventional engagement device is carried out, unnecessary wire rod clamper operation can extend once to engage and follows
In the case of the time of ring, therefore the thin footpath closing line especially below 20 μm, the working performance extreme difference of joint.
Content of the invention
In order to solve above-mentioned shortcoming and defect, it is an object of the invention to provide a kind of pass through unified crystallization particle diameter, make
It is non-directional, and makes the copper alloy bonding wire that cut-out end will not stretch out in the sectional area of closing line.
The present invention is to solve following technical problems:After wedge bonding by copper alloy bonding wire directly up pull-up with
In the wedge bonding step of such second joint of short time internal cutting off, wire rod front end is deformed into J-shaped.The purpose of the present invention
It is to provide one kind by unified crystallization particle diameter, makes it non-directional, and it is J-shaped so that cut-out end will not be deformed into
Copper alloy bonding wire.
The reason be in the past deformed into J-shaped, can refer to Fig. 1 understanding as follows.By closing line 1 wedge bonding in lead frame 3
Afterwards, capillary 2 is made to increase.So, closing line 1 can be extracted out in the front end of capillary 2.Make connecing of certain length becoming
After zygonema 1 extends the state of capillary 2 front end, the wire rod clamper 4 positioned at capillary 2 top is closed to keep connecing
Zygonema 1, makes wire rod clamper 4 rise together with capillary 2.
So, closing line 1 stretches according to young's modulus, and by further up, closing line 1 is torn.Closing line
1 elasticity can discharge because of this cut-out.If the closing line 1 now between wire rod clamper 4 and cut-off part has machine
The weaker place of tool intensity, then have energy and concentrate on this weaker place and make wire rod slight curvature become J-shaped feelings
Condition (resilience).Inventor etc. finds that this is the reason closing line 1 slight curvature becomes J-shaped.
In order to solve the copper alloy bonding wire of present invention problem, the crystal grain of the copper alloy of its unit sectional area is
50-250, its maximum particle diameter is less than the 1/3 of bond wire diameter, and is<111>Or<100>Deng specific direction all
Non-directional below 40%.Herein, the specific direction in the present invention, the orientation referring to certain direction relatively is at ± 20 °
Situation about allowing in angle.
In one embodiment of the present invention, this copper alloy is to be made up of following compositions:Golden (Au) is 100 mass ppm
Below above 3000 mass ppm, silver-colored (Ag) be below more than 10 mass ppm 1000 mass ppm, phosphorus (P) be
Below more than 5 mass ppm 500 mass ppm, the total amount of other impurities element be below 100 mass ppm and surplus
Remaining part part is copper (Cu).
Also, in another embodiment of the present invention, this copper alloy is to be made up of following compositions:Nickel (Ni), palladium (Pd)
Or platinum (Pt) be more than 0.02 mass % below 1 mass %, phosphorus (P) be more than 5 mass ppm 500 mass ppm with
Under, the total amount of other impurities element is below 100 mass ppm and remaining part is copper (Cu).
Also, in another embodiment of the present invention, the core of this copper alloy is coated to by palladium (Pd) extended layer.
Also, in another embodiment of the present invention, the core of this copper alloy is by palladium (Pd) extended layer and the thin extension of gold (Au)
Layer is coated to.
Also, in another embodiment of the present invention, this crystal grain is 80-200.
Also, in another embodiment of the present invention, this maximum particle diameter is less than the 1/5 of bond wire diameter.
Also, in another embodiment of the present invention, it is that this specific direction is non-directional all below 38%.
The invention provides a kind of copper alloy bonding wire, the crystal grain of the copper alloy of its unit sectional area is 50-250,
Its maximum particle diameter is less than the 1/3 of bond wire diameter, and non-directional all below 40% for specific direction.
According to copper alloy bonding wire of the present invention it is preferable that this copper alloy is to be made up of following compositions:Golden (Au)
For below more than 100 mass ppm 3000 mass ppm, silver-colored (Ag) be more than 10 mass ppm 1000 mass ppm
Below and/or phosphorus (P) is more than 5 mass ppm below 500 mass ppm;The total amount of other impurities element is 100
Below quality ppm;And residue part is copper (Cu).
According to copper alloy bonding wire of the present invention it is preferable that this copper alloy is to be made up of following compositions:Nickel
(Ni), palladium (Pd) or platinum (Pt) are below more than 0.02 mass % 1 mass %;Phosphorus (P) is more than 5 mass ppm 500
Below quality ppm;The total amount of other impurities element is below 100 mass ppm;And residue part is copper (Cu).
According to copper alloy bonding wire of the present invention it is preferable that the core of this copper alloy is by palladium (Pd) extended layer institute quilt
Cover.
According to copper alloy bonding wire of the present invention it is preferable that the core of this copper alloy is by palladium (Pd) extended layer and gold
(Au) thin extended layer is coated to.
According to copper alloy bonding wire of the present invention it is preferable that this crystal grain is 80-200.
According to copper alloy bonding wire of the present invention it is preferable that this maximum particle diameter is less than the 1/5 of bond wire diameter.
According to copper alloy bonding wire of the present invention it is preferable that described specific direction all below 38% not properly
Tropism.
In the present invention, the crystal grain making the copper alloy of unit sectional area is 50-250, even if being because in closing line
Long side direction form the tissue of dual cored structure, after wedge bonding, closing line is also torn readily along grain boundary.If
Crystal grain is less than 50, then, in final Tempering and Quenching, easily form thick crystal grain in closing line.Also,
If, more than 250, closing line is hardening, and loop shape is unstable for crystal grain.Crystal grain is preferably 80-240.Crystal grain
It is more preferably 100-220.
In the present invention, the maximum particle diameter making crystal grain is less than the 1/3 of bond wire diameter, if being because having huge
Crystal grain, then wire rod easily bend in this place.The bad, loop of inclination that is bent to of closing line forms bad or wire rod
The reason deformation (wire deformation).Maximum particle diameter is preferably less than the 1/5 of bond wire diameter.It is more preferably 1/8
Below.
In the present invention, become specific direction non-directional all below 40%, be in order to avoid closing line formed double
Weight cored structure.If because<100>Deng in 0 ° of specific direction to the scope less than 20 ° more than 40%, then closing line
Pull apart mode different because having or not specific direction.Specific direction preferably less than 38%.It is more preferably less than 37%.This
Outward, set 20 ° rather than 15 °, be to collect more information amounts from trickle closing line as far as possible.
Copper alloy in the present invention is preferably made up of following compositions:Golden (Au) is more than 100 mass ppm 3000
Below quality ppm, silver-colored (Ag) is below more than 10 mass ppm 1000 mass ppm or phosphorus (P) is 5 mass ppm
Below above 500 mass ppm, the total amount of other impurities element is below 100 mass ppm and remaining part is copper
(Cu).The content of phosphorus (P) is more preferably below 200 mass ppm.Effect is taken advantage of to close copper by golden (Au) with adding of silver-colored (Ag)
Oxygen included in golden feed metal is fixed, and also can prevent the surface segregation of phosphorus (P), therefore most preferably makes 3 kinds of elements
Coexist.Also, the gold (Au) of given amount, the young's modulus of copper alloy can be improved.
Also, the copper alloy in the present invention is preferably made up of following compositions:Nickel (Ni), palladium (Pd) or platinum (Pt) are 0.02
Below more than quality % 1 mass %, phosphorus (P) be more than 5 mass ppm below 500 mass ppm, other impurities unit
The total amount of element is below 100 mass ppm and remaining part is copper (Cu).The content of phosphorus (P) is more preferably 200 mass ppm
Below.Because the oxygen included in copper alloy feed metal is fixed by nickel (Ni), and also can prevent the surface segregation of phosphorus (P).
The nickel (Ni) of the given amount in copper alloy substrate fine disperses, and oxygen is fixed.Also, the nickel (Ni) of given amount, can
Improve the young's modulus of copper alloy.
Herein so as to the total amount of his impurity element is below 100 mass ppm, it is to prevent in copper alloy substrate
The middle oxide forming base metal element.If because form the oxide of base metal element in the grain boundary of copper, returning
The closing line of bullet is easily deformed.The total amount of other impurities element is preferably below 50 mass ppm, if ignoring raw material gold
Belong to price, below more preferably 5 mass ppm.For example, if using purity more than nominal 6N (99.9999 mass %)
Copper raw material metal, then the total amount of other metallic elements be less than 1 mass ppm.Additionally, " other impurities element " is
Refer to sulfur (S), oxygen (O) etc..If because there is the sulfur (S) more than 10 mass ppm, have FAB hardening and first
There is the situation of wafer breakage during joint.However, in the copper alloy of general closing line, 10 will not be comprised more than
The sulfur (S) of quality ppm.
Additionally, the copper alloy of the present invention, the high-purity copper alloy mother metal of 6N to 4N can be used.In this mother metal, one
As containing the oxygen below more than 0.2 mass ppm 50 mass ppm.The oxygen amount such as this, even if copper alloy mother metal is carried out
Re-dissolved, casting, a bracing wire, intermediate heat-treatment, secondary bracing wire, finished heat treatment, keeping etc., the present invention's
Copper alloy composition also hardly changes.If containing aerobic in copper (Cu) substrate, base metal element easily forms oxide,
Therefore preferably reduce oxygen content as far as possible.Additionally, the copper alloy that can remove gas componant in general high-purity copper alloy is (blue or green
Wooden Zhuan Si etc., copper and copper alloy magazine, in January, 2003, No. 1 page 21 of volume 42).
Also, in the present invention, preferably the core in copper alloy is coated to palladium (Pd) extended layer.Furthermore, more preferably in copper
The core of alloy is coated to palladium (Pd) extended layer and the thin extended layer of gold (Au).This is because closing line is easily pulled after wedge bonding
Disconnected.Herein, the expression of " extended layer " and " thin extended layer ", though the configuration of surface of reality may not necessarily correctly be expressed,
But its be using the micropartical going out palladium (Pd) and golden (Au) from the Surface testing of closing line depth direction scope as theory
On thickness, convenience to be expressed with there is " layer " of thickness.The thickness of the closing line of the present invention is very thin, as long as therefore
Micropartical can be gone out from the Surface testing of closing line by high-frequency induction coupled plasma atomic emission spectrometry (ICP-AES),
Then it is determined that " extended layer " and " thin extended layer ".
Additionally, in the copper alloy bonding wire of the present invention, even if its coating palladium (Pd) extended layer or palladium (Pd) extension
Layer and golden (Au) thin extended layer, because this grade extended layer is very thin, therefore have little influence on the young's modulus of copper alloy core.Palladium
(Pd) extended layer has the effect of the oxidation postponing copper alloy fine rule.Also, in the case of coating gold (Au) thin extended layer,
There are following effects:Make the element immobilizations such as the sulfur (S) that surface separates out from copper alloy, so that current flowing is crossed not simultaneously
The spark discharge stabilisation of good palladium (Pd) extended layer.
In the present invention, the crystal grain of the copper alloy in order to obtain unit sectional area be 50-250, its maximum particle diameter be
Wire diameter less than 1/3,<111>Or<100>Deng direction-free fine rule all below 40% for the specific direction,
Manufacturing technology of the prior art can be used.For example, Showa 60 years (Christian era 1985) modern ages July 1 editor society
The rice number directly secondary work of limited company's distribution《Metal stretching》" recrystallization fiber collection tissue is added 9th chapter with secondary
In work " " 9.3 secondary workabilities and fibrous tissue " in describe in detail high-purity copper once, secondary bracing wire adds
Work and the relation of intermediate annealing.The bracing wire processing of closing line, the final reduction of area in this book is more than 99%, applies in this
Plus Tempering and Quenching.In the present invention, if make bracing wire working modulus be below 95-99.99% and carry out suitable in
Between anneal, you can manufacture the present invention copper alloy bonding wire.
The Advantageous Effects of copper alloy joint line of the present invention:
According to the copper alloy bonding wire of the present invention, cut-off at the closing line becoming the thinnest during its wedge bonding, therefore have can
There is provided a kind of front end of closing line will not bend to J-shaped, cut-out end will not stretch out in the sectional area of closing line
The effect of copper alloy bonding wire.If also, the dimensionally stable of closing line, the FAB also having during the first joint will not
Become the effect of special-shaped soldered ball.Furthermore, due to only by by closing line, up closing line can simply be cut off by pull-up,
Therefore there is the effect shortening the engagement step time.Also, from 20 μm to 15 μm, wire rod footpath is more little more can play this
Bright effect.
Also, the copper alloy bonding wire being provided according to the embodiment of the present invention, base metal in cuprio matter, is not disperseed to aoxidize
Thing, therefore wire rod itself is soft.Also, the first position of spark discharge when engaging also is stable, even if therefore palladium (Pd) prolong
Stretch the coating thin than ever of layer or palladium (Pd) extended layer and the thin extended layer of gold (Au), also there is FAB during the first joint
Stable effect.
Furthermore, the copper alloy bonding wire that embodiments of the present invention are provided, extend in wire rod most surface setting golden (Au)
Layer in the case of, even if wire rod each other coiled multiple times and wind 1 myriadmeter, wire rod also will not be adhered each other.As a result,
The uncoiling of wire rod becomes good.Also, as additional effect, wire surface becomes good to the sliding of capillary.Also, according to this
The copper alloy bonding wire of invention, gold (Au) micropartical of wire rod most surface will not be peeled off from the extended layer of palladium (Pd).Therefore,
Even if repeatedly engaging, the oxide of copper (Cu) also will not be attached to capillary, therefore capillary will not be dirty.
Brief description
Fig. 1 be by the wedge bonding of the copper alloy fine rule of the present invention obtained by closing line profile;
Fig. 2 is the axonometric chart of the wedge bonding step of display copper alloy fine rule;
Fig. 3 be by the wedge bonding of copper alloy fine rule obtained by engagement state profile;
Fig. 4 is the profile bending to J-shaped closing line.
Main Reference label declaration:
1st, closing line;
2nd, capillary;
3rd, lead frame;
4th, wire rod clamper.
Specific embodiment
In order to be more clearly understood to the technical characteristic of the present invention, purpose and beneficial effect, in conjunction with detail below
Embodiment and Figure of description carry out described further below, however, this can be will readily appreciate that to technical scheme
Bright embodiment provides many suitable inventive concepts to may be implemented in wide variety of specific background.Disclosed specific reality
Apply example to be merely to illustrate with ad hoc approach making and use the present invention, and be not used to limit to the scope of the present invention.Furthermore,
Make, in the schema and description of the embodiment of the present invention, the same or analogous part that is denoted by the same reference numerals.
Embodiment
Core uses the copper (Cu) that purity is 99.9998 mass % (5N), and by phosphorus (P) and nickel (Ni) furthermore palladium (Pd),
Platinum (Pt), golden (Au) and silver (Ag) are as addition element.As base metal element, high-purity copper is selected to typically contain
Element.That is, suitably select bismuth (Bi), selenium (Se), tellurium (Te), zinc (Zn), ferrum (Fe), nickel (Ni) and stannum (Sn).Will
The embodiment blending these metals in given area is respectively as embodiment 1- embodiment 5.
Then, dissolved and carried out continuously casting, afterwards, in the model making section slip be below 95-99.99%
Carry out first time bracing wire in enclosing, obtain the thick line (diameter 1.0mm) before coating stretching material.Then, carry out intermediate heat
Process (300-600 DEG C of process 0.5-3 hour) (embodiment 4, embodiment 5) or do not carry out intermediate heat-treatment (embodiment 1-
Embodiment 3).Afterwards, the golden thin extended layer (embodiment 4, embodiment 5) of (Au) and prolonging of palladium (Pd) are set in response to demand
Stretch layer (embodiment 3- embodiment 5).With wet type, these semi-finished product wire rods are carried out continuously section by diamond bracing wire mould to subtract
Second bracing wire of few rate more than 99%, and carry out the Tempering and Quenching of 1 second at 480 DEG C, finally give a diameter of
15 μm of copper alloy bonding wire.Additionally, average diameter reducing rate is 6-20%, final linear speed is 100-1000m/ minute.
Also, the purity of golden (Au) is more than 99.9999 mass %, the purity of palladium (Pd) is more than 99.999 mass %.
Crystal grain measures
It is to carry out as follows that the crystal grain of the unit sectional area of closing line measures.That is, using ion milling apparatus (type
Number:Hitachi High-Technologies company system IM4000) closing line of embodiment 1 is cut off.Then, make
Observe its section with FE-SEM (NEC company JSM-7800F).Also, using EBSD device, (TSL is public
Take charge of OIM Data Collection System processed) unit of account sectional area crystal grain number.This measurement result is shown in table 1
Right column.
Direction measures
The direction of closing line measures, and is using FE-SEM (NEC company JSM-7800F) and EBSD dress
Put (TSL company system OIM Data Collection System) and carry out.This measurement result is shown in table 1 right column.
The bend test of closing line
The bend test of closing line is carried out as follows.That is, using wire bonding machine (new river company system
UTC-3000), export 100mA, engage the condition of load-carrying 90gf, temperature around with ultrasound (ultrasound wave)
Carry out 100 wedge bondings on silver-plated (Ag) copper (Cu) plate for 25 DEG C.Then, after this wedge bonding terminates, as shown in figure 1,
So that capillary 2 is increased and extract closing line 1 out from the front end of capillary 2, afterwards after closure wire rod clamper 4, make capillary 2
Rise together with wire rod clamper 4, cut off in the state of the closing line 1 making certain length extends capillary 2 front end
Wire rod.Carry out 1,000 this tests, and to amplify the bent-strip number of examining projector closing line.This measurement result shows
In table 1 right column.
Comparative example
Using the closing line of the composition shown by table 1 as comparative example 1 and 2.This grade comparative example 1 and the line of comparative example 2
Material, the number of crystal grain deviates scope, and is respectively provided with intrinsic privileged direction.That is, the wire rod of comparative example 1, its
Intermediate heat-treatment temperature is higher than the wire rod of embodiment 5, therefore the number of its crystal grain is less 13,<100>Excellent
First direction is overall 57%.Also, the wire rod of comparative example 2, the section slip of its bracing wire processing is higher than to implement
The wire rod of example 3, therefore do not find crystal grain and be denoted as countless.Also,<111>Privileged direction be overall 45%,<100>
Privileged direction be overall 10%.
Identically with embodiment, the closing line of this grade comparative example 1 and 2 is carried out with crystal grain mensure, direction measures, joint
The bend test of line and stretch out test, obtains the result of table 1 right column.
By the result of the test such as this it will be apparent that, the whole embodiments of the present invention, it has suitable crystal grain, and no preferential
Direction, thus the front end of closing line will not bend to J-shaped.On the other hand, the wire rod of comparative example 1 and 2, closing line
Front end bends to J-shaped bar number and is respectively 8 and 14.It may thus be appreciated that the wire rod of comparative example also causes to FAB
Impact.
Industrial applicability
The copper alloy bonding wire of the present invention, may replace conventional billon wire rod, and except being common to IC, discrete type amasss
Beyond body circuit (Discrete IC), memory body IC, also have and use for LED that is hot and humid and requiring low cost
IC package, the semiconductor applications of automotive semiconductor IC package etc..
Although the present invention is disclosed above with preferred embodiment, so it is not limited to the present invention, any affiliated technology
Technical staff in field, without departing from the spirit and scope of the present invention, when can change and combine above-mentioned various embodiment.
Claims (8)
1. a kind of copper alloy bonding wire it is characterised in that:
The crystal grain of the copper alloy of unit sectional area is 50-250, and its maximum particle diameter is less than the 1/3 of bond wire diameter,
And it is non-directional all below 40% for specific direction.
2. copper alloy bonding wire according to claim 1 is it is characterised in that this copper alloy is by following compositions
Constituted:Gold is below more than 100 mass ppm 3000 mass ppm, silver is more than 10 mass ppm 1000
Below quality ppm and/or phosphorus is more than 5 mass ppm below 500 mass ppm;The total amount of other impurities element is
Below 100 mass ppm;And residue part is copper.
3. copper alloy bonding wire according to claim 1 is it is characterised in that this copper alloy is by following compositions
Constituted:Nickel, palladium or platinum are below more than 0.02 mass % 1 mass %;Phosphorus is more than 5 mass ppm 500 matter
Amount below ppm;The total amount of other impurities element is below 100 mass ppm;And residue part is copper.
4. copper alloy bonding wire according to claim 1 is it is characterised in that the core of this copper alloy is prolonged by palladium
Stretch layer to be coated to.
5. copper alloy bonding wire according to claim 1 is it is characterised in that the core of this copper alloy is prolonged by palladium
Stretch layer and golden thin extended layer is coated to.
6. copper alloy bonding wire according to claim 1 is it is characterised in that this crystal grain is 80-200.
7. copper alloy bonding wire according to claim 1 is it is characterised in that this maximum particle diameter is that closing line is straight
Less than the 1/5 of footpath.
8. copper alloy bonding wire according to claim 1 is it is characterised in that described specific direction is all 38%
Following is non-directional.
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JP2015-168713 | 2015-08-28 | ||
JP2015168713A JP6410692B2 (en) | 2015-08-28 | 2015-08-28 | Copper alloy bonding wire |
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CN106486447A true CN106486447A (en) | 2017-03-08 |
CN106486447B CN106486447B (en) | 2020-03-03 |
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CN (1) | CN106486447B (en) |
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CN110317969A (en) * | 2018-03-28 | 2019-10-11 | 住友金属矿山株式会社 | The overlay film of solder bonding electrodes and solder bonding electrodes, which is formed, uses copper alloy target |
Families Citing this family (2)
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KR102167481B1 (en) * | 2017-08-09 | 2020-10-19 | 닛테츠 케미컬 앤드 머티리얼 가부시키가이샤 | Cu alloy bonding wire for semiconductor devices |
KR102167478B1 (en) * | 2017-08-09 | 2020-10-19 | 닛테츠 케미컬 앤드 머티리얼 가부시키가이샤 | Cu alloy bonding wire for semiconductor devices |
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JP2009140953A (en) * | 2007-12-03 | 2009-06-25 | Nippon Steel Materials Co Ltd | Bonding wire for semiconductor device |
CN101689519A (en) * | 2007-12-03 | 2010-03-31 | 新日铁高新材料株式会社 | Bonding wire for semiconductor devices |
CN101828255A (en) * | 2007-12-03 | 2010-09-08 | 新日铁高新材料株式会社 | Bonding wire for semiconductor devices |
CN101919037A (en) * | 2009-03-23 | 2010-12-15 | 田中电子工业株式会社 | Coated copper wire for ball bonding |
CN102422404A (en) * | 2009-07-30 | 2012-04-18 | 新日铁高新材料株式会社 | Bonding wire for semiconductor |
CN104241237A (en) * | 2013-06-13 | 2014-12-24 | 田中电子工业株式会社 | Plated copper wire structure used for ultrasonic bonding |
CN104411845A (en) * | 2012-07-31 | 2015-03-11 | 三菱综合材料株式会社 | Copper alloy wire and copper alloy wire manufacturing method |
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2015
- 2015-08-28 JP JP2015168713A patent/JP6410692B2/en not_active Expired - Fee Related
-
2016
- 2016-03-21 TW TW105108645A patent/TWI714562B/en not_active IP Right Cessation
- 2016-05-19 SG SG10201603986XA patent/SG10201603986XA/en unknown
- 2016-06-03 CN CN201610390155.XA patent/CN106486447B/en not_active Expired - Fee Related
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JP2009140953A (en) * | 2007-12-03 | 2009-06-25 | Nippon Steel Materials Co Ltd | Bonding wire for semiconductor device |
CN101689519A (en) * | 2007-12-03 | 2010-03-31 | 新日铁高新材料株式会社 | Bonding wire for semiconductor devices |
CN101828255A (en) * | 2007-12-03 | 2010-09-08 | 新日铁高新材料株式会社 | Bonding wire for semiconductor devices |
CN101919037A (en) * | 2009-03-23 | 2010-12-15 | 田中电子工业株式会社 | Coated copper wire for ball bonding |
CN102422404A (en) * | 2009-07-30 | 2012-04-18 | 新日铁高新材料株式会社 | Bonding wire for semiconductor |
CN104411845A (en) * | 2012-07-31 | 2015-03-11 | 三菱综合材料株式会社 | Copper alloy wire and copper alloy wire manufacturing method |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN110317969A (en) * | 2018-03-28 | 2019-10-11 | 住友金属矿山株式会社 | The overlay film of solder bonding electrodes and solder bonding electrodes, which is formed, uses copper alloy target |
CN110317969B (en) * | 2018-03-28 | 2022-01-14 | 住友金属矿山株式会社 | Solder bonding electrode and copper alloy target for forming coating film of solder bonding electrode |
Also Published As
Publication number | Publication date |
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TW201709363A (en) | 2017-03-01 |
TWI714562B (en) | 2021-01-01 |
SG10201603986XA (en) | 2017-03-30 |
CN106486447B (en) | 2020-03-03 |
JP2017045924A (en) | 2017-03-02 |
JP6410692B2 (en) | 2018-10-24 |
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