TW201523807A - Bonding wire for packaging and preparing method of bonding wire - Google Patents
Bonding wire for packaging and preparing method of bonding wire Download PDFInfo
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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- H01L2224/45001—Core members of the connector
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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Abstract
Description
本發明係關於封裝領域，具體而言，係關於封裝用鍵合絲及其製備方法。The present invention relates to the field of packaging, and more particularly to a bonding wire for packaging and a method of producing the same.
在傳統的封裝焊接技術中，常用金含量99.99%以上的純金線將晶片與導線架焊接，隨著黃金的價格逐年攀高，封裝金線的成本亦隨之升高，因此目前多採用銀合金線、純銀線甚至銅線來取代傳統金線。In the traditional package soldering technology, the pure gold wire with a gold content of 99.99% or more is commonly used to solder the wafer to the lead frame. As the price of gold increases year by year, the cost of the packaged gold wire also increases. Therefore, silver alloy wires are often used. , pure silver wire or even copper wire to replace the traditional gold wire.
然而，銀合金線或者銀線在使用過程中自身易被氧化或者被硫化，且在高溫高濕的環境下會發生銀遷移(Silver Migration)的問題；銅線也因易被氧化，直接造成產品良率下降。However, silver alloy wires or silver wires are easily oxidized or vulcanized during use, and silver migration occurs in a high-temperature and high-humidity environment; copper wires are also easily oxidized and directly cause products. The yield is reduced.
本發明的目的在於提供一種封裝用鍵合絲及其製備方法，以解決上述的問題。It is an object of the present invention to provide a bonding wire for packaging and a method of producing the same to solve the above problems.
本發明實施例中提供了一種封裝用鍵合絲，包括：一中心母線；以及一鈀膜，其中該鈀膜係鍍敷於該中心母線的外表面。In the embodiment of the present invention, a bonding wire for packaging is provided, comprising: a center bus bar; and a palladium film, wherein the palladium film is plated on an outer surface of the center bus bar.
本發明實施例中還提供了一種封裝用鍵合絲的製備方法，包括：The embodiment of the invention further provides a method for preparing a bonding wire for packaging, comprising:
A.製備中心母線；A. Prepare the center busbar;
B.採用真空鍍的方式，在該中心母線的外表面鍍上鈀膜；B. using a vacuum plating method, the outer surface of the center bus bar is plated with a palladium film;
C.將該鍍膜之中心母線進行多次拉伸；C. stretching the center bus bar of the coating film multiple times;
D.清洗；以及D. cleaning;
E.退火得成品。E. Annealing the finished product.
相較於先前技術，本發明實施例提供的封裝用鍵合絲及其製備方法，將中心母線的外表面鍍上鈀膜後，鈀膜能夠有效減緩中心母線的氧化，當中心母線中包含銀時，能夠改善銀遷移問題，且鍍上鈀膜之方式簡單，易於操作。Compared with the prior art, the bonding wire for packaging provided by the embodiment of the present invention and the preparation method thereof, after the outer surface of the center bus bar is plated with a palladium film, the palladium film can effectively slow the oxidation of the center bus bar, and the center bus bar contains silver. At the time, the silver migration problem can be improved, and the palladium film is plated in a simple manner and is easy to handle.
以下，透過具體實施例並結合附圖對本發明做進一步的詳細描述。Hereinafter, the present invention will be further described in detail through the specific embodiments and the accompanying drawings.
本發明實施例中提供了一種封裝用鍵合絲，包括：一中心母線；以及一鈀膜，其中該鈀膜係鍍敷於該中心母線的外表面。In the embodiment of the present invention, a bonding wire for packaging is provided, comprising: a center bus bar; and a palladium film, wherein the palladium film is plated on an outer surface of the center bus bar.
本發明實施例中還提供了一種封裝用鍵合絲的製備方法，包括：The embodiment of the invention further provides a method for preparing a bonding wire for packaging, comprising:
A.製備中心母線；A. Prepare the center busbar;
B.採用真空鍍的方式，在該中心母線的外表面鍍上鈀膜；B. using a vacuum plating method, the outer surface of the center bus bar is plated with a palladium film;
C.將該鍍膜之中心母線進行多次拉伸；C. stretching the center bus bar of the coating film multiple times;
D.清洗；以及D. cleaning;
E.退火得成品。E. Annealing the finished product.
將中心母線的外表面鍍上鈀膜後，鈀膜能夠有效減緩中心母線的氧化，當中心母線中包含銀時，能夠改善銀遷移問題，且鍍上鈀膜之方式簡單，易於操作。After the outer surface of the center bus bar is plated with a palladium film, the palladium film can effectively slow the oxidation of the center bus bar. When the center bus bar contains silver, the silver migration problem can be improved, and the palladium film is plated in a simple and easy operation.
以下，透過一些具體實施例來詳細描述本發明之封裝用鍵合絲：Hereinafter, the bonding wire for packaging of the present invention will be described in detail through some specific embodiments:
本發明之一種封裝用鍵合絲，包括：一中心母線；以及一鈀膜，其中該鈀膜係鍍敷於該中心母線的外表面。鈀膜能夠減緩氧化，且當中心母線中含有銀的時候，鈀膜能夠改善銀遷移問題，且電阻率與純金線相當，電阻率小於3×10-8 Ω∙m。A bonding wire for encapsulation of the present invention comprises: a center bus bar; and a palladium film, wherein the palladium film is plated on an outer surface of the center bus bar. The palladium membrane can slow the oxidation, and when the center busbar contains silver, the palladium membrane can improve the silver migration problem, and the resistivity is comparable to that of the pure gold wire, and the resistivity is less than 3×10 -8 Ω∙m.
在本發明之另一具體實施例中，進一步包含一金膜，該金膜係鍍敷於該鈀膜之上。鍍鈀後再鍍金能夠進一步減緩氧化及硫化的發生速度，並改善銀遷移，提高封裝用鍵合絲的實用性。In another embodiment of the present invention, a gold film is further included, and the gold film is plated on the palladium film. Gold plating after palladium plating can further slow down the occurrence of oxidation and vulcanization, improve silver migration, and improve the utility of bonding wires for packaging.
其中，鈀膜的厚度為0.01-0.3微米；金膜的厚度為0.01-0.3微米。原則上，厚度越薄，成本越低。但是也不能夠小於0.01微米，因為小於0.01微米實際使用時抗氧化效果及防範陰離子遷移效果不好。Wherein, the palladium film has a thickness of 0.01 to 0.3 μm; and the gold film has a thickness of 0.01 to 0.3 μm. In principle, the thinner the thickness, the lower the cost. However, it cannot be less than 0.01 micrometer, because the antioxidant effect and the prevention of anion migration are not good in actual use of less than 0.01 micrometer.
中心母線的橫截面直徑為80-200微米。在不同的實施例中可以採用不同的橫截面直徑，只要便於後續拉伸至不同直徑的成品即可。The center busbar has a cross-sectional diameter of 80-200 microns. Different cross-sectional diameters can be used in different embodiments as long as the subsequent stretching to finished products of different diameters is facilitated.
該中心母線係選自金銀合金線或銅線。相較於傳統的金線，本發明之封裝用鍵合絲採用金銀合金線能夠大幅降低成本，此外，採用銅線也能夠降低成本，且能夠直接避免銀遷移。The center busbar is selected from a gold-silver alloy wire or a copper wire. Compared with the conventional gold wire, the bonding wire for packaging of the present invention can greatly reduce the cost by using a gold-silver alloy wire. In addition, the use of the copper wire can also reduce the cost and directly avoid silver migration.
其中，當該中心母線係為金銀合金時，用於製備該金銀合金的金的純度大於99.99%，銀的純度大於99.99，該金銀合金線中銀的重量百分比含量為80-99.99wt%，金的重量百分比含量為19.99-0.00wt%，且金和銀的重量百分比之和為99.99%，該金銀合金線中所含的鉍的含量小於30ppm,總雜質含量低於100ppm；透過控制金、銀的純度，以及控制雜質含量能夠減緩氧化，透過適當調整金、銀的比例，能夠製備與傳統的封裝用鍵合絲性能相似的金銀合金鍵合絲。Wherein, when the center busbar is a gold-silver alloy, the purity of the gold used for preparing the gold-silver alloy is greater than 99.99%, the purity of the silver is greater than 99.99, and the weight percentage of silver in the gold-silver alloy wire is 80-99.99% by weight, gold The content by weight is 19.99-0.00wt%, and the sum of the weight percentages of gold and silver is 99.99%, the content of bismuth contained in the gold-silver alloy wire is less than 30ppm, and the total impurity content is less than 100ppm; The purity, as well as the control of the impurity content, can slow down the oxidation, and by appropriately adjusting the ratio of gold and silver, it is possible to prepare a gold-silver alloy bond wire having similar properties to the conventional bonding wire for packaging.
當中心母線係為銅線時，用於製備該銅線的銅為純度大於99.99%的單晶無氧銅，以達到提高產率，減緩氧化效果。When the center busbar is a copper wire, the copper used for preparing the copper wire is a single crystal oxygen-free copper having a purity of more than 99.99%, so as to improve the yield and slow down the oxidation effect.
以下為五個具體實施例：The following are five specific examples:
實施例1：Example 1:
如第1圖所示，中心母線為銀線201；鍍有鈀膜101，膜厚為0.05微米，鍵合絲的橫截面直徑為150微米。As shown in Fig. 1, the center bus bar is a silver wire 201; a palladium film 101 is plated with a film thickness of 0.05 μm, and the bonding wire has a cross-sectional diameter of 150 μm.
實施例2：Example 2:
如第2圖所示，中心母線為金銀合金線202，鍍有鈀膜102，膜厚為0.25微米，鍵合絲的橫截面直徑為120微米。As shown in Fig. 2, the center bus bar is a gold-silver alloy wire 202 plated with a palladium film 102 having a film thickness of 0.25 μm and a bonding wire having a cross-sectional diameter of 120 μm.
實施例3：Example 3:
如第3圖所示，中心母線為金銀合金線203，鍍有鈀膜103，膜厚為0.18微米，鍵合絲的橫截面直徑為100微米。As shown in Fig. 3, the center bus bar is a gold-silver alloy wire 203, which is plated with a palladium film 103 having a film thickness of 0.18 μm and a bonding wire having a cross-sectional diameter of 100 μm.
實施例4：Example 4:
如第4圖所示，中心母線為金銀合金線204，鍍有鈀膜304，鈀膜上又鍍有金膜104，鈀膜304的膜厚為0.10微米，金膜104的膜厚為0.08微米，鍵合絲的橫截面直徑為130微米。As shown in Fig. 4, the center bus bar is a gold-silver alloy wire 204, which is plated with a palladium film 304, and the palladium film is further plated with a gold film 104. The film thickness of the palladium film 304 is 0.10 μm, and the film thickness of the gold film 104 is 0.08 μm. The bonding wire has a cross-sectional diameter of 130 μm.
針對銀遷移問題，採用能量散佈分析儀(Energy Dispersive Spectrometer, EDS)對未鍍鈀和金的中心母線、以及鍍有鈀和金的封裝用鍵合絲分別進行測試，中心母線的測試如第6圖所示，鍵合絲的測試如第7圖所示，從兩張圖可以看出，鍍有鈀和金之後，銀遷移現象明顯減弱。For the silver migration problem, the energy dispersive analyzer (EDS) was used to test the center busbars without palladium and gold, and the bonding wires coated with palladium and gold. The test of the center busbar is as shown in the sixth. As shown in the figure, the test of the bonding wire is shown in Fig. 7. As can be seen from the two figures, the silver migration phenomenon is significantly weakened after plating with palladium and gold.
實施例5：Example 5:
如第5圖所示，中心母線為銅線205，鍍有鈀膜305，鈀膜305上又鍍有金膜105，鈀膜305的膜厚為0.09微米，金膜105的膜厚為0.10微米，鍵合絲的橫截面直徑為90微米。As shown in Fig. 5, the center bus bar is a copper wire 205, which is plated with a palladium film 305, and the palladium film 305 is further plated with a gold film 105. The film thickness of the palladium film 305 is 0.09 μm, and the film thickness of the gold film 105 is 0.10 μm. The bonding wire has a cross-sectional diameter of 90 μm.
以下，針對上述對封裝用鍵合絲的製備方法進行描述：Hereinafter, the preparation method of the bonding wire for packaging will be described above:
一種封裝用鍵合絲的製備方法，包括：A method for preparing a bonding wire for packaging, comprising:
A.製備中心母線；A. Prepare the center busbar;
B.採用真空鍍的方式，在該中心母線的外表面鍍上鈀膜；B. using a vacuum plating method, the outer surface of the center bus bar is plated with a palladium film;
C.將該鍍膜之中心母線進行多次拉伸，拉伸至預定橫截面直徑；C. stretching the center bus bar of the coating film multiple times and stretching to a predetermined cross-sectional diameter;
D.清洗；以及D. cleaning;
E.退火得成品，退火能夠進行重結晶，晶粒大小均勻地介於0.5-1.5微米之間，以保證其良好的延伸率及斷裂負荷。E. Annealing the finished product, annealing can be recrystallized, and the grain size is evenly between 0.5-1.5 microns to ensure good elongation and breaking load.
在步驟(B)之後，在步驟(C)之前，該製備方法還包括：採用真空鍍的方式，在鈀膜上鍍上金膜。After the step (B), before the step (C), the preparation method further comprises: depositing a gold film on the palladium film by vacuum plating.
鍍金能夠形成雙層鍍膜，能夠進一步減緩氧化，並改善銀遷移現象。Gold plating can form a two-layer coating that further reduces oxidation and improves silver migration.
上述之步驟(A)，包括：The above step (A) includes:
選擇中心母線的原料，該原料係選自於由金、銀及銅所組成之群組；Selecting a raw material for the center bus, the raw material being selected from the group consisting of gold, silver, and copper;
將原料進行熔煉、鑄造、拉伸至所需要的長度，形成鑄棒；以及The raw material is smelted, cast, and drawn to a desired length to form a cast rod;
將鑄棒繼續進行多次拉伸至橫截面直徑為80-200微米的中心母線。The cast rod is continuously stretched multiple times to a center busbar having a cross-sectional diameter of 80-200 microns.
在上述鍍上鈀膜和鍍上金膜的步驟中，鈀膜的鍍膜材料為環形鈀靶，純度為大約99.99%，晶粒小於200微米；金膜的鍍膜材料為環形金靶，純度為大於99.99%，晶粒小於200微米。In the above step of plating a palladium film and plating a gold film, the coating material of the palladium film is a ring-shaped palladium target having a purity of about 99.99% and a crystal grain of less than 200 μm; the coating material of the gold film is a ring-shaped gold target, and the purity is greater than 99.99%, the grain size is less than 200 microns.
以下，以實施例4之封裝用鍵合絲的製備方法為例，詳細描述本發明之封裝用鍵合絲的製備方法：Hereinafter, the preparation method of the bonding wire for packaging of the present invention will be described in detail by taking the preparation method of the bonding wire for encapsulation of Example 4 as an example:
步驟101. 中心母線的材料配製Step 101. Material preparation of the center busbar
(1)取純度99.99%以上，不純物鉍(Bi)含量低於30ppm，不純物總含量低於l00ppm之銀(Ag)原料。(1) A silver (Ag) material having a purity of 99.99% or more, an impurity (Bi) content of less than 30 ppm, and a total impurity content of less than 100 ppm.
(2)取純度99.99%以上，之金(Au)原料。(2) A gold (Au) raw material having a purity of 99.99% or more.
(3)將上述銀(Ag)原料和金(Au)原料按照重量百分比配製，確保銀金總含量為99.99wt%，其中銀(Ag)含80.00〜99.99wt%，金(Au)含19.99〜0.00wt%，除銀金外，不純物總含量低於l00ppm。(3) The above silver (Ag) raw material and gold (Au) raw material are prepared in a weight percentage to ensure a total silver gold content of 99.99 wt%, wherein silver (Ag) contains 80.00 to 99.99 wt%, and gold (Au) contains 19.99~ 0.00wt%, except for silver, the total content of impurities is less than l00ppm.
步驟102. 真空熔煉鑄棒Step 102. Vacuum melting cast rod
(1)根據既定需求將步驟101中的母線材料投入真空熔煉爐，設定熔煉爐加熱參數。(1) The bus bar material in step 101 is put into a vacuum melting furnace according to a predetermined demand, and the heating parameters of the melting furnace are set.
(2)將熔煉爐中銀(Ag)、金(Au)連續鑄造以拉伸至線徑為6mm左右的金銀合金鑄棒。(2) The silver (Ag) and gold (Au) in the melting furnace are continuously cast to be drawn to a gold-silver alloy cast rod having a wire diameter of about 6 mm.
(3)對金銀合金鑄棒進行取樣分析，以全光譜法確定該鑄棒的鉍(Bi)含量低於30ppm，不純物總含量低於l00ppm。(3) Sampling and analysis of the gold-silver alloy cast rod, the total bismuth (Bi) content of the cast rod is determined to be less than 30 ppm, and the total impurity content is less than 100 ppm.
步驟103. 拉伸清洗AStep 103. Stretch Cleaning A
(1)根據需要將藉由步驟102所形成的鑄棒繼續進行多次拉伸至線徑在80〜200μm的母線。(1) The cast rod formed by the step 102 is continuously stretched as many times as necessary to a bus bar having a wire diameter of 80 to 200 μm.
(2)將步驟(1)中母線表面因拉伸黏附的油污清洗乾淨。(2) The surface of the bus bar in the step (1) is cleaned by the oil adhered by the stretching.
步驟104. 表面鍍膜Step 104. Surface coating
(1)採用真空鍍的方式，將步驟103中洗淨的母線藉由連續鍍膜機，鍍上一層鈀膜(Pd)；(1) using a vacuum plating method, the bus bar washed in step 103 is coated with a palladium film (Pd) by a continuous coating machine;
步驟(1)中，根據預定成品線徑來設定鈀(pd)的膜厚，透過鍍膜機的走線速度、功率和時間來控制所需膜厚。鍵合絲的膜厚是一定的，因此，需要結合鍵合絲的長度、橫截面直徑來控制該步驟中鍍的鈀膜的厚度。In the step (1), the film thickness of palladium (pd) is set in accordance with the predetermined product wire diameter, and the desired film thickness is controlled by the wire speed, power and time of the coater. The film thickness of the bonding wire is constant, and therefore, it is necessary to control the thickness of the palladium film plated in this step in combination with the length of the bonding wire and the cross-sectional diameter.
(步驟(1)中，所使用的鍍膜材料為環形鈀靶，純度99.99%以上，晶粒大小(GrandSize)小於200μm。(In the step (1), the plating material used is a ring-shaped palladium target having a purity of 99.99% or more and a grain size (GrandSize) of less than 200 μm.
(2)採用真空鍍的方式，將步驟(1)中鍍有鈀膜的母線透過連續鍍膜機，鍍上一層金(Au)膜；(2) using a vacuum plating method, the bus bar plated with the palladium film in the step (1) is passed through a continuous coating machine, and a gold (Au) film is plated;
步驟(2)中，根據預定成品線徑來設定金(Au)的膜厚，透過鍍膜機的走線速度、功率和時間來控制所需膜厚。鍵合絲的膜厚是一定的，因此，需要結合鍵合絲的長度、橫截面直徑來控制該步驟中鍍的金膜的厚度。In the step (2), the film thickness of gold (Au) is set according to the predetermined finished wire diameter, and the desired film thickness is controlled by the wire drawing speed, power and time of the coater. The film thickness of the bonding wire is constant, and therefore, it is necessary to control the thickness of the gold film plated in this step in combination with the length of the bonding wire and the cross-sectional diameter.
步驟(2)中，所用鍍膜材料為環形金靶，純度99.99%以上，晶粒大小(GrandSize)小於200μm。In the step (2), the coating material used is a ring-shaped gold target, the purity is 99.99% or more, and the grain size (GrandSize) is less than 200 μm.
步驟105. 拉伸清洗BStep 105. Stretch Cleaning B
(1)根據需要將藉由步驟104所形成之鍍有鈀(Pd)膜和金膜的中心母線繼續進行多次拉伸至預定線徑，其中線徑為15〜50μm，鈀(Pd)的膜厚控制在0.01〜0.3μm。(1) The center bus bar plated with the palladium (Pd) film and the gold film formed by the step 104 is continuously stretched to a predetermined wire diameter as needed, wherein the wire diameter is 15 to 50 μm, and palladium (Pd) The film thickness is controlled to be 0.01 to 0.3 μm.
(2)如上述步驟103(2)中所述，將步驟(1)中成品進行清洗乾淨。(2) The finished product in the step (1) is cleaned as described in the above step 103 (2).
步驟106. 熱處理Step 106. Heat treatment
將拉伸完成的鍍有鈀和金的中心母線進行退火處理，完成本發明之封裝用鍵合絲。其中，透過控制退火條件，讓其重結晶，使晶粒大小均勻(Grand Size在0.5〜1.5μm之間)，以確保該封裝用鍵合絲良好的延伸率(EL)及斷裂負荷(BL)。The center bus bar plated with palladium and gold which has been stretched is annealed to complete the bonding wire for encapsulation of the present invention. Among them, by controlling the annealing conditions, it is recrystallized to make the grain size uniform (Grand Size is between 0.5 and 1.5 μm) to ensure good elongation (EL) and breaking load (BL) of the bonding wire for the package. .
在其他只鍍上鈀膜的實施例中，只需要刪除步驟104 (2)即可。In other embodiments in which only the palladium membrane is plated, only step 104 (2) needs to be deleted.
實施例5中的中心母線為銅線，因此在步驟101選材中選擇純度大於99.99%的單晶無氧銅，中心母線的橫截面直徑尺寸範圍在50-200μm(微米)。The center bus bar in Example 5 is a copper wire, so that single crystal oxygen-free copper having a purity greater than 99.99% is selected in the material of step 101, and the center bus bar has a cross-sectional diameter ranging from 50 to 200 μm (micrometer).
上述步驟中，係在線材表面完成雙層真空鍍膜鈀(Pd)及金(Au)後再進行拉伸。由於以金(Au)作為該封裝用鍵合絲最外層，如此一來，相較於直接拉伸未鍍膜之合金母線，可有效降低拉線模具的損耗，使該拉線模具達到和製作純金線一樣的壽命。In the above steps, the double-layer vacuum coating of palladium (Pd) and gold (Au) is performed on the surface of the wire before stretching. Since gold (Au) is used as the outermost layer of the bonding wire for the package, the loss of the wire drawing die can be effectively reduced compared with the direct stretching of the uncoated alloy bus bar, so that the wire drawing die can be made and pure gold is produced. The same life as the line.
透過在線材表面完成雙層真空鍍膜鈀(Pd)及金(Au)後，可克服該線材在使用端易被氧化、被硫化、及銀離子遷移等現象。After double-layer vacuum coating of palladium (Pd) and gold (Au) through the surface of the wire, the wire can be easily oxidized, vulcanized, and migrated with silver ions at the use end.
此種封裝用鍵合絲在大幅降低封裝成本的同時，有效的克服了傳統的鍵合絲在使用端易被氧化及銀遷移等問題，且其電阻率與純金線相當，電阻率小於3×10-8 Ω∙m，從而擴大了其應用領域。The bonding wire for such a package can effectively overcome the problems of the conventional bonding wire being easily oxidized and silver migration at the use end while greatly reducing the packaging cost, and the resistivity is equivalent to the pure gold wire, and the resistivity is less than 3×. 10 -8 Ω ∙ m, thus expanding its application.
以上僅為本發明的較佳實施例，並不用於限制本發明，對於本發明所屬技術領域中具有通常知識者而言，本發明可以有各種更改和變化。凡在本發明的精神和原則之內，所作的任何修改、均等置換、改進等，均應包含在本發明的保護範圍之內。The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and various modifications and changes can be made to the present invention without departing from the scope of the invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and scope of the invention are intended to be included within the scope of the invention.
101‧‧‧鈀膜
201‧‧‧銀線
102‧‧‧鈀膜
202‧‧‧金銀合金線
103‧‧‧鈀膜
203‧‧‧金銀合金線
104‧‧‧金膜
204‧‧‧金銀合金線
304‧‧‧鈀膜
105‧‧‧金膜
205‧‧‧銅線
305‧‧‧鈀膜101‧‧‧Palladium membrane
201‧‧‧Silver line
102‧‧‧Palladium membrane
202‧‧‧gold and silver alloy wire
103‧‧‧Palladium membrane
203‧‧‧gold and silver alloy wire
104‧‧‧gold film
204‧‧‧gold and silver alloy wire
304‧‧‧Palladium film
105‧‧‧ gold film
205‧‧‧ copper wire
305‧‧‧Palladium film
第1圖為本發明實施例1中封裝用鍵合絲的結構示意圖。第2圖為本發明實施例2中封裝用鍵合絲的結構示意圖。第3圖為本發明實施例3中封裝用鍵合絲的結構示意圖。第4圖為本發明實施例4中封裝用鍵合絲的結構示意圖。第5圖為本發明實施例5中封裝用鍵合絲的結構示意圖。第6圖為本發明對實施例4中中心母線的銀遷移測試圖。第7圖為本發明對實施例4中封裝用鍵合絲的銀遷移測試圖。Fig. 1 is a schematic view showing the structure of a bonding wire for packaging in the first embodiment of the present invention. Fig. 2 is a schematic view showing the structure of a bonding wire for packaging according to a second embodiment of the present invention. Fig. 3 is a schematic view showing the structure of a bonding wire for packaging according to Embodiment 3 of the present invention. Fig. 4 is a schematic view showing the structure of a bonding wire for packaging according to Embodiment 4 of the present invention. Fig. 5 is a schematic view showing the structure of a bonding wire for packaging according to Embodiment 5 of the present invention. Figure 6 is a graph showing the silver migration test of the center bus bar in the fourth embodiment of the present invention. Fig. 7 is a graph showing the silver migration test of the bonding wire for packaging in the fourth embodiment of the present invention.
101‧‧‧鈀膜 101‧‧‧Palladium membrane
201‧‧‧銀線 201‧‧‧Silver line
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| CN105428335B (en) * | 2015-12-09 | 2017-12-26 | 北京达博有色金属焊料有限责任公司 | A kind of bonding wire |
| CN108091632B (en) * | 2017-12-13 | 2020-04-14 | 汕头市骏码凯撒有限公司 | Gold-silver alloy composite bonding wire and manufacturing method thereof |
| CN108155169A (en) * | 2017-12-13 | 2018-06-12 | 汕头市骏码凯撒有限公司 | The compound bonding wire of golden gallium cobalt alloy and its manufacturing method with golden clad |
| CN108122877B (en) * | 2017-12-21 | 2020-10-13 | 汕头市骏码凯撒有限公司 | Thin gold-copper alloy wire and method for manufacturing same |
| CN109686713A (en) * | 2018-12-11 | 2019-04-26 | 上海万生合金材料有限公司 | A kind of plating gold-palladium copper wire and preparation method thereof |
| CN109962049A (en) * | 2019-03-31 | 2019-07-02 | 上海万生合金材料有限公司 | A kind of metal wire and its production technology |
| CN111041419A (en) * | 2019-12-25 | 2020-04-21 | 江苏金蚕电子科技有限公司 | Preparation method of gold-silver alloy wire |
| CN111519227B (en) * | 2020-03-30 | 2021-02-23 | 安徽广宇电子材料有限公司 | Anti-oxidation treatment equipment of copper wire material for bonding wire preparation |
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