WO1988002411A1 - Material for conductive parts of electronic and electric appliances - Google Patents

Material for conductive parts of electronic and electric appliances Download PDF

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Publication number
WO1988002411A1
WO1988002411A1 PCT/JP1987/000717 JP8700717W WO8802411A1 WO 1988002411 A1 WO1988002411 A1 WO 1988002411A1 JP 8700717 W JP8700717 W JP 8700717W WO 8802411 A1 WO8802411 A1 WO 8802411A1
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WO
WIPO (PCT)
Prior art keywords
electronic
good
strength
lead frame
conductive parts
Prior art date
Application number
PCT/JP1987/000717
Other languages
French (fr)
Japanese (ja)
Inventor
Toshiki Muramatsu
Mamoru Matsuo
Original Assignee
Sky Aluminium Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sky Aluminium Co., Ltd. filed Critical Sky Aluminium Co., Ltd.
Priority to KR1019880700616A priority Critical patent/KR950013291B1/en
Publication of WO1988002411A1 publication Critical patent/WO1988002411A1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • C22C21/06—Alloys based on aluminium with magnesium as the next major constituent
    • C22C21/08—Alloys based on aluminium with magnesium as the next major constituent with silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to a material for conductive parts of electronic and electrical equipment which is further used in conductive parts such as semiconductors and Ic (integrated circuit) lead frames or connectors and switches. This is related to electronic materials that exhibit conductivity (heat dissipation), solderability, plating, high mechanical strength, and good bending characteristics.
  • conductive components used in electrical equipment include discrete semiconductors such as transistors, leads used in ICs, large-scale integrated circuits (LSIs), and SCRs (Si Ie Control iea Recti fie thyristors).
  • LSIs large-scale integrated circuits
  • SCRs Si Ie Control iea Recti fie thyristors
  • a strip material having a thickness of 0.1 to 0.5 made of a conductive material as a lead frame material is prepared, and the strip material is subjected to breath punching or etching to obtain a required lead frame shape (however, the outer lead sides are mutually connected). Lucky), and then a high-purity Si etc.
  • the semiconductor element (S ⁇ chip) is joined. This joining is called “diode date”, and is performed by pressure bonding using a conductive resin such as Ag paste or pre-bonding.
  • a conductive resin such as Ag paste or pre-bonding.
  • a method consisting of one kind of single layer or two or more kinds of multi-layers is formed, and then heat-expanded and pressed through this layer to utilize eutectic such as Au-Si. Integrate the semiconductor chip with the rhino-ream: the method, the method of joining using PD-S ⁇ solder, etc.
  • the semiconductor element, the connection part, and the lead frame at the part where the semiconductor element is mounted are sealed with a resin, ceramic, or the like to finally protect the lead frame.
  • the plug assembly also has a switching property, and a process of die-bonding the semiconductor element (Si chip) and the lead frame.
  • Heat resistance water deficiency
  • Fe-42; ⁇ ! Alloy 42, or Fe 17?? 0-299-6 ⁇ alloy Kovar, and Cu-based alloy phosphorous copper (CA501), Cu-Fe-Zn-1P ( c A 194) alloy, Cu-Fe-Co-Sn-P (CA195) alloy, etc. are used.
  • aluminum alloy is known as an inexpensive conductive material.
  • aluminum alloy is considered to be unable to fully satisfy the characteristics required for the above-described lead frame and the like.
  • the reality is that lead alloys made of aluminum alloy have not been put into practical use.
  • the present invention has been made on the basis of the above circumstances, and has a good softening property and good electrical conductivity, ripening conductivity (ripening property), better solderability, plating property, and high mechanical strength.
  • a repeated bending resistance has, moreover it is also an object to provide an electronic ⁇ electrical equipment conductive component material consisting cheap i aluminum based alloys 0
  • the present inventors have made a study on aluminum-based alloys that can satisfy the properties required for materials used in conductive parts of electronic and electrical equipment such as lead frames as described above. He found that the religious grace could be used to improve the characteristics of the game, and thus led to the invention.
  • the conductive component material for electronic and electrical equipment according to the second aspect of the present invention contains Mg Madane 1) -u% (weight%, the same applies hereinafter) and Si (silicon) 0.2-2.0%. The rest is A (aluminum) and the inevitable impure union.
  • the conductive material for electronic / electric equipment of the second invention includes Mg and S i specified in the first invention, and furthermore, Cu (copper) 0.01 to 3.0%, Zn (zinc) Contains one or two of 0.01 to 3.0?
  • the conductive component material of the third aspect of the present invention further includes: VI ⁇
  • the conductive material for electronic and electrical equipment according to the fourth invention includes, in addition to the Mg and Si specified in the first invention, one or two of Cu and Zn specified in the second invention, and the third invention. It contains ⁇ ⁇ ⁇ or two or more of the specified M n, C “, Z”, V, i.
  • V1 g is an element that forms a precipitate by coexisting with S ⁇ ⁇ and contributes to strength improvement, and is necessary for obtaining strength and repetitive bending resistance required for components such as a lead frame.
  • Mg was set within the range of 0.2 to 3.0%.
  • Si is an element that forms precipitates when coexisting with Mg and contributes to strength improvement. Similarly to Mg, Si is an element necessary for obtaining the strength necessary for parts such as lead frames, etc. It is. However,
  • S i was in the range of 0.2 to 2.096.
  • the aluminum alloy as a conductive component material of the electronic / electric device of the present invention basically has the above Mg and Si.
  • the second and fourth inventions further contain one or two of Cu and Z ⁇ . ' ⁇ ⁇ ⁇ ⁇ M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M
  • Cu further improves plating and soldering properties It is an effective element for causing If Cu is less than 0.01%, the effect cannot be sufficiently obtained, while if it exceeds 3.0%, the corrosion resistance decreases. Therefore, Cu was set in the range of 0.01 to 3.0%. In addition, CU is preferably contained in this range exceeding 0.59 particularly from the viewpoint of improving the solderability and the solderability. Z n:
  • Zn is also an effective element for further improving the plating properties and solderability. If Zn is less than 0.01%, the effect cannot be sufficiently obtained, while if it exceeds 3.096, the corrosion resistance decreases. Therefore, Zn was set in the range of 0.01 to .3.0? / 0 .
  • VI n is an element effective for refining the recrystallized grains during the intermediate annealing (during the solution treatment) to further improve the strength and heat resistance (softening resistance): M n is 0.01 These effects cannot be obtained sufficiently at 96 germs, and even if the content exceeds 103.0%, the effects of improving strength and heat resistance are saturated, and a large compound is easily produced during production. M 0.01 is 0.01 to 3.0
  • G also refines the recrystallized grains during intermediate annealing (during solution treatment) to further improve strength and heat resistance. It is an effective element. If C is less than%, these effects cannot be obtained sufficiently. On the other hand, if the content is increased up to 0.30%, the effects of improving strength and heat resistance are saturated, and a huge compound may be produced during production. Easy to generate. 5 Therefore, C "was set within the range of 01 to 0.30 96, Z":
  • Z "3 ⁇ 4 is an element effective for refining recrystallized grains, improving strength, and improving heat resistance.
  • Z is less than 0.01%,-:: Harana; Not obtained, — ⁇ 0.% 3 ⁇ 4- Even if the content exceeds 0, the effect of improving strength and heat resistance is saturated, and it becomes easy to form a huge compound at the time of fabrication. Therefore, ⁇ was set within the range of 0.01 to Q.30%.
  • V is an element effective for improvement. If V is less than 0.01%, these effects cannot be sufficiently obtained. On the other hand, if the content exceeds 0.30%, the effect of improving the strength and heat resistance can be reduced by m, and a condensed tube compound is produced. From 0, which is easy, V is limited to the range of 0.01 to 0.30.
  • Ni is set in the range of 0.01 to 5.7%.
  • a and unavoidable impurities are Utogura.
  • Fe is usually contained as an unavoidable impurity, but if Fe is about 0.60% or less, there is no particular problem as a material for conductive parts of electronic and electrical equipment such as lead frame materials, etc., which is the subject of the present invention.
  • Ti titanium
  • Ti and B boron
  • Be is optionally added for the purpose of preventing the oxidation of the molten metal or improving the rollability.
  • Be may be added in the case of the material of the present invention, if necessary.
  • the electronic component of the present invention having the above-described component composition ro Equipment materials are .7 and 7 Lumini :: Mu: base alloys, so they are much cheaper and more excellent than conventional 42 alloys, Kovar or CU-based materials. It has chipping properties, good electrical conductivity, good conductivity, heat dissipation, and also has good solderability, plating properties, high mechanical strength, and good bending properties. In addition, it is the lightest lightning as a material for conductive parts of electronic and electrical equipment such as ICs, semiconductor lead frame materials, switches and connectors that require these characteristics.
  • the material of the present invention is used as a lead frame especially when wire bonding is performed with an AI wire in a lead frame material, Au plating or Ag can be applied to the semiconductor element mounting portion connection portion. There is no need to apply plating, etc., and there is a merit in that, as it is, wire die squid is scattered as H., which can further reduce the cost of semiconductor device production.
  • a molten aluminum-based alloy having the above-described composition is prepared according to a conventional method.
  • This construction method and uX are based on the rod gun construction method (the construction method-fishing), but from the viewpoint of energy saving and improvement of softening resistance, the thin plate continuous construction method (continuous construction rolling method) is applied. Is also good.
  • the obtained ingot is subjected to a soaking process (homogenizing process) and a hot rolling process, and if necessary, a cold rolling process, an intermediate annealing process (solution treatment process), and a final cold rolling process.
  • a soaking process homogenizing process
  • a hot rolling process if necessary, a cold rolling process, an intermediate annealing process (solution treatment process), and a final cold rolling process.
  • Rolled plate of about 0.1 to 0.5 Fiber in the case of continuous thin plate manufacturing, the steps up to hot rolling among these steps can be omitted.
  • the uniform heat treatment may be performed at a temperature of 450 to 600 ° C. within a period of time.
  • the soaking temperature is 450 ° C
  • the ripening rollability decreases, while when the soaking temperature exceeds 600 C, eutectic melting tends to occur.
  • the steel sheet is usually re-ripened and then subjected to hot rolling.
  • This reheating is carried out at 400 to 550 ° C according to a conventional method, and the forging is also performed at 40 to 550 ° C. You can do it in C. Note that it is not necessary to separately perform the soaking treatment (homogenization treatment) and the heat treatment for the hot rolling as described above. And then hot rolling ⁇ ⁇ is good.
  • ra annealing is for pre-solidifying Ig and Si in order to give age hardenability by Mg and SI, and is a solution treatment of general JIS 6000 series alloy. What is necessary is just to carry out on the conditions according to conditions. In other words, the annealing temperature is set to 48G to 560 ° C, and although it varies depending on the sheet thickness, the annealing temperature is maintained within 1 hour, and the cooling rate rc
  • the strength of the final rolled plate must be at least 30k5fZ at a whip strength of 0 and at least 25l3 ⁇ 4fZM at proof strength, and the aluminum base alloy of the present invention. , Cold pressure, after rolling) dE ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ . If the above strength can be secured, the final strength is required to further improve the cyclic bending resistance. After cold rolling, final annealing may be performed at 10 (TC or more.
  • the alloys of the present invention and the comparative alloys shown in Table 1 were produced by a normal semi-continuous production process or a continuous sheet production process (continuous production rolling).
  • the semi-continuously manufactured ingot is beveled on each side to a thickness of 3 ⁇ 400., A width of 1 000 ⁇ , and a length of 3500.
  • the production conditions shown in Table 2 A 30 mm thick rolled plate was used. In the case of continuous production, the thickness of the forged plate was 4 mm, and the rolled plate had a thickness of 0.30 mm under the manufacturing conditions shown in 4 or to.
  • the rolled aluminum alloy sheets were examined for mechanical properties, softening resistance, electrical conductivity, plating properties, and solderability. Table 3 shows the results.
  • the inert gas layer is heat treated at 200 to 30 (TC for several seconds. Heat treatment was performed for 5 minutes, and the tensile strength after the heat treatment was measured.
  • the rolled plate was coated with a zinc alloy to determine the solderability and the solderability.
  • the distribution of ⁇ on the zincate treated surface was observed with an optical microscope, and the distribution of ⁇ ⁇ was evaluated as ⁇ , ⁇ , X in a uniform order. If it is more than ⁇ , it is judged to be bad. Note that the ⁇ condition processing of ⁇ is as follows.
  • the repeatability was measured by measuring the number of reciprocations of a 0.30 mm rolled material 90 ° one way. There is no problem in performance if the repetitive bendability is 5 times or more. No. ⁇
  • a batch-type industrial-scale annealing furnace that has a water tank below the furnace and can perform water quenching.
  • the aluminum-based alloy as a conductive material for electronic and electrical equipment according to the present invention has sufficient strength with a rolled material having a tensile strength of 30 l ⁇ f Z 2 or more.
  • a tensile strength of 3 Q! 3 ⁇ 4f / or more can be secured even after aging at 250 ° C for 5 minutes, so that the heat resistance is good, and the wire bending bendability is good, and the conductivity is good.
  • This poison electric power is much cheaper than conventional 42 alloy, Kovar or CU material, and has excellent softening resistance and good electrical conductivity. It has good conductivity, heat dissipation, and good repellency, good mechanical properties, high mechanical strength, and good repetitive bending properties.
  • ICs, LSIs, SCRs, and other conductors that are required. These are suitable as materials for conductive parts of electronic and electrical equipment, such as switches and connectors.
  • wire If the material of the present invention is used as a lead frame when bonding is performed using the A-line, there is no need to apply Au plating or Ag plating to the semiconductor element mounting portion and wire connection portion, and wire bonding can be performed as it is. This makes it possible to further reduce the cost of manufacturing semiconductor devices.

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Abstract

Material for conductive parts such as a lead frame or a connector of semiconductors or IC and essentially provides an aluminum-base material containing 0.2 to 3.0 % of Mg, 0.2 to 2.0 % of Si, the balance of Al and unavoidable impurities. This material may further optionally contain Cu and/or Zn, and/or one or more of Mn, Cr, Zr, V, and Ni. It is inexpensive and has good softening resistance, electric conductivity, heat conductivity, capabilities of soldering and plating, high mechanical strengths and good repeated bending resistance.

Description

明 細 書  Specification
電子電気機器導電部品用材料  Materials for conductive parts of electronic and electrical equipment
S 術 分 野  S surgery field
この発明は半導体や I c (集積回路》 のリードフ レームあるいはコネクタゃスイツチなどの導電部品 に 1更用される電子電気機器導電部品用材料に関し、 待に良好な酎軟化性、 電気伝導性、 熱伝導性 （放熱 性） 、 はんだ付け性、 メツキ性、 および高い機械的 強度と良好な繰返し曲げ性を示す電子 ♦ 電気機器導 電部品用 ォ料に関するものである。  The present invention relates to a material for conductive parts of electronic and electrical equipment which is further used in conductive parts such as semiconductors and Ic (integrated circuit) lead frames or connectors and switches. This is related to electronic materials that exhibit conductivity (heat dissipation), solderability, plating, high mechanical strength, and good bending characteristics.
背 景 技 術  Background technology
電子♦ 電気機器に使用される導電部品の代表的な ものとしては、 トランジスタなどの個別半導体や I C、 L S I (大規模集積回路） 、 S C R ( Si I icon Control iea Recti fie サイリスタ ） に使用される リードフレームがある。 このリードフレームは、 代 表的には次のような工程を経て I Cや半導体に組込 まれる。  Electronic ♦ Typical examples of conductive components used in electrical equipment include discrete semiconductors such as transistors, leads used in ICs, large-scale integrated circuits (LSIs), and SCRs (Si Ie Control iea Recti fie thyristors). There is a frame. This lead frame is typically incorporated into ICs and semiconductors through the following steps.
すなわち先ずリードフレーム用材料としての導電 材料からなる板厚 0.1〜 0.5顧の条材を用意し、 そ の条材にブレス打抜き加工またはエッチングを施し て所要のリードフレーム形状 （但しアウターリード 側が相互に運なつている ¾の） とし、 次いでそのリ ードフレームの所定箇所に高純度 S i などからなる 半導体素子 （ S 〖 チップ》 を接合する。 この接合は、 ダィボ デイツ " t称 れるものであつて、 A gぺ ース卜等の導電樹脂を用いて加圧接着する方法、 あ るいは予めリ一ドフレーム素材の片面もしくは半導That is, first, a strip material having a thickness of 0.1 to 0.5 made of a conductive material as a lead frame material is prepared, and the strip material is subjected to breath punching or etching to obtain a required lead frame shape (however, the outer lead sides are mutually connected). Lucky), and then a high-purity Si etc. The semiconductor element (S 〖chip) is joined. This joining is called “diode date”, and is performed by pressure bonding using a conductive resin such as Ag paste or pre-bonding. One-sided or semi-conductive single frame material
5 1本素子 ί S I チップ〉 の面 (こ、 A u 、 A g に等 5 Single element ί SI chip> surface (e.g.,
のうちの Ί種の単層または 2種以上の多重層からな るメツキ罾を形成しておき、 このメツキ層を介し加 熱拡歆圧着して A u— S i などの共晶を利用してリ ノ - レ一ム 半導体業子 を凝合す :法、 さ ひ には P D — S Πはんだ等を用いて接合する方法など  Of these, a method consisting of one kind of single layer or two or more kinds of multi-layers is formed, and then heat-expanded and pressed through this layer to utilize eutectic such as Au-Si. Integrate the semiconductor chip with the rhino-ream: the method, the method of joining using PD-SΠ solder, etc.
がある c この後、 蟇板上のリードフレームの所定箇 所にダイボンディングされた半導体素子 （ S 〖 チッ プ〉 上の A 電極とリードフレームの導体端子 （ィ ンナーリード） とを A u もしく A 線で接続する。5 '痛おヮ: ャ' ディン^ 称さ^ 、 る -引 After this is c, the conductor terminal (I N'narido A electrode and the lead frame on the die bonding semiconductor elements to a predetermined箇office of the lead frame on Toads plate (S 〖chip>) and the A u Moshiku A Connect with a line.5 'Italian: din'
続いて半導体素子、 結線部分、 および半導体素子が 取付けられた部分のリードフレームを保護するため に樹脂やセラミック等で封止し、 最終的にリードフ レー rnァケタ ― F雜互に響 碰を切獠す 0 る c Subsequently, the semiconductor element, the connection part, and the lead frame at the part where the semiconductor element is mounted are sealed with a resin, ceramic, or the like to finally protect the lead frame. 0 0 c
以上のような工程を経て使用されるリードフレー Lead frame used through the above process
Λ材とし X Μ,, 良-好な.プ ス組ェ胜も、し ツチ - ング性を有すること、 および半導体素子 （ S i チッ プ） とリードフレームをダイボンディングする工程 での耐熱性 （酎?欠化性） ゃメ ツキ性、 はんだ付け性 が良好であること、 さらには良好な放熱性 （熱伝導 性〉 、 導電性を有し、 しかも半導体装置の輸送ゃ電 子機器への組込みに際しての曲がりや繰返し曲げに よって破損が生じない強度や延性を有し、 また耐食 性を有することが要求される。 As a material, X-ray ,, good and good. The plug assembly also has a switching property, and a process of die-bonding the semiconductor element (Si chip) and the lead frame. Heat resistance (water deficiency) る こ と Good adhesion and good solderability, good heat dissipation (thermal conductivity), conductivity, and transport of semiconductor devices It is required to have strength and ductility to prevent breakage due to bending or repeated bending when assembled into slave equipment, and to have corrosion resistance.
従采このようなリードフレー厶材としては、 F e -42 ；\ ！ 合金である 42合金、 あるいは F e— 17? 〇 0 - 299-6 ί 合金であるコバール、 さらには C u 系合金のリン胃銅 （ CA 501) 、 C u - F e - Z n 一 P ( c A 194) 合金、 C u - F e - C o - S n - P ( C A 195) 合金等が使用されている。  According to such lead frame material, Fe-42; \! Alloy 42, or Fe 17?? 0-299-6 合金 alloy Kovar, and Cu-based alloy phosphorous copper (CA501), Cu-Fe-Zn-1P ( c A 194) alloy, Cu-Fe-Co-Sn-P (CA195) alloy, etc. are used.
しかしながら従釆のリードフレーム材のうち、 コ バールや 42合金はいずれも高価な N ！ を多量に含有 するため高衝格とならざるを得ず、 また C u系合金 は繰返し曲げ性が劣り、 しかも価格的な面でも間題 があった。 そこでリードフレーム材で代表される電 子♦ 電気機器導電部品の導電材料として、 これらの 部品に要求される諸特性を満足ししかも安価な材料 の開発♦ '旲用化が強く望まれている。  However, of the conventional lead frame materials, Kovar and 42 alloy are both expensive N! Since it contains a large amount of, it has to be highly rated, and Cu-based alloys have poor repetitive bendability and have problems in terms of price. Therefore, the development of inexpensive materials that satisfy the characteristics required for these components as electronic materials, such as leadframe materials, and that are used as conductive materials for electrical components, has been strongly desired.
一般に安価な導電材料としてはアルミニウム合金 が知られているが、 従来はアルミニウム合金は前述 のようなリードフレーム等に要求される諸特性を充 分に満足できないものとされ、 したがってアルミ二 ゥム合金のリードフレーム材は実用化されていなか つたのが実情である。 In general, aluminum alloy is known as an inexpensive conductive material. However, conventionally, aluminum alloy is considered to be unable to fully satisfy the characteristics required for the above-described lead frame and the like. The reality is that lead alloys made of aluminum alloy have not been put into practical use.
この発明は以上の事情を背景としてなされたもの で、 ϋ軟化性および良好な電気伝導性、 熟伝導性 (放熟性》 , さらに良好なはんだ付け性、 メツキ性、 および高い機械的強度と良好な繰返し曲げ性を有し、 しかも安 i なアルミニウム基合金からなる電子♦電 気機器導電部品材料を提供することを目的とするも である 0 The present invention has been made on the basis of the above circumstances, and has a good softening property and good electrical conductivity, ripening conductivity (ripening property), better solderability, plating property, and high mechanical strength. a repeated bending resistance has, moreover it is also an object to provide an electronic ♦ electrical equipment conductive component material consisting cheap i aluminum based alloys 0
発 明 の 開 示  Disclosure of the invention
本発明者等はアルミニウム基合金について、 前述 のようなリードフレーム等の電子電気機器導電部品 に使用される材料として必要な特性を満足させ得る 成分 ♦組成について種々実験♦検討を重ねた結果、 ¾ 戒側猶¾ £ — ϊ 金で湔 特性を篛足させ得ることを見出し、 この発明をなす に至ったのである。  The present inventors have made a study on aluminum-based alloys that can satisfy the properties required for materials used in conductive parts of electronic and electrical equipment such as lead frames as described above. He found that the religious grace could be used to improve the characteristics of the game, and thus led to the invention.
具体的には、 第 Ί発明の電子電気機器導電部品材 料は、 Mg マダネ ゥ ） 1 〜 u% (重量％、 以下同じ》 および S i (珪素） 0. 2〜 2. 0%を含有 し、 残部が A （アルミニウム） および不可避的不 純翁よ^ ¾る と^ 裔る-。  Specifically, the conductive component material for electronic and electrical equipment according to the second aspect of the present invention contains Mg Madane 1) -u% (weight%, the same applies hereinafter) and Si (silicon) 0.2-2.0%. The rest is A (aluminum) and the inevitable impure union.
また第 2発明の電子電気機器導電部品材料は、 第 1発明で規 している M g、 S i のほか、 さらに C u (銅〉 0.01 〜 3.0%、 Z n (亜鉛） 0,01 〜 3.0? のうちの Ί 種または 2種を含有するものであ る。 In addition, the conductive material for electronic / electric equipment of the second invention includes Mg and S i specified in the first invention, and furthermore, Cu (copper) 0.01 to 3.0%, Zn (zinc) Contains one or two of 0.01 to 3.0?
さらに第 3発明の電子電気機器導電部品材料は、 第 Ί 発明で規定する M g、 S i のほか、 さらに! VI η Further, in addition to Mg and Si specified in the second invention, the conductive component material of the third aspect of the present invention further includes: VI η
(マンガン） 0.01 〜 3.096、 C 「 （クロム） 0.01 〜 0.30 %、 Ζ 「 （ジルコニウム〉 0.01 〜 0.30 % , V (バナジウム） 0.01 〜 ひ.30 %、 ！NM (二 ッケル》 0.01 〜 5.7%のうちの Ί 種または 2種以 上を含有するものである。 (Manganese) 0.01 to 3.096, C (chromium) 0.01 to 0.30%, Ζ (zirconium) 0.01 to 0.30%, V (vanadium) 0.01 to 0.30%,! NM (nickel) 0.01 to 5.7% It contains ま た は or two or more.
また第 4発明の電子電気機器導電部品材料は、 第 1 発明で規定する M g、 S i のほか、 第 2発明で規 する C u、 Z nの Ί 種または 2種と、 第 3発明で 規定する M n、 C 「、 Z 「、 V、 i の Ί 種または 2種以上を含有するものである。  In addition, the conductive material for electronic and electrical equipment according to the fourth invention includes, in addition to the Mg and Si specified in the first invention, one or two of Cu and Zn specified in the second invention, and the third invention. It contains ま た は or two or more of the specified M n, C “, Z”, V, i.
次にこの発明のアルミニウム基合金からなる電子 電気機器導電部品材料の成分限定理由について説明 する。  Next, the reasons for limiting the components of the conductive component material for an electronic / electric device made of the aluminum-based alloy of the present invention will be described.
g ：  g:
,V1 gは S ί と共存することにより析出物を形成し て強度向上に寄与する元素であり、 リードフレーム 等の部品として必要な強度および耐繰返し曲げ性を 得るに必要である。 しかしながら 0.2%未満では強 度向上効果が充分に得られず、 一方 3.0%を越えて 含有させても強度向上の効果が飽和し、 コスト上昇 を招くだけである。 1たがって Mgは ひ.2〜 3.0% の範囲内とした。 , V1 g is an element that forms a precipitate by coexisting with S 寄 与 and contributes to strength improvement, and is necessary for obtaining strength and repetitive bending resistance required for components such as a lead frame. However, if it is less than 0.2%, the effect of improving strength is not sufficiently obtained, while if it exceeds 3.0%, Even if it is contained, the effect of improving strength is saturated, and only the cost is increased. Therefore, Mg was set within the range of 0.2 to 3.0%.
S ！ ：  S! :
S i は M gと共存することにより析出物を形成し て強度向上に寄与する元素であり、 M gと同様にリ ードフレーム等の部品として必要な強度、 酎繰返し 曲げ性を得るに必要な元素である。 しかしながら  Si is an element that forms precipitates when coexisting with Mg and contributes to strength improvement.Similarly to Mg, Si is an element necessary for obtaining the strength necessary for parts such as lead frames, etc. It is. However
2 % m は m d^ 渤粜 赤分 避: れず、 一方 2.0%を越えて含有させても強度向上の効果は 飽和し、 コス卜上昇を招くだけである。 したがって 2% m is not m d ^ Bo red red component: On the other hand, if the content exceeds 2.0%, the effect of strength improvement is saturated and only the cost rises. Therefore
S i は 0.2〜 2.096の範囲内とした。 S i was in the range of 0.2 to 2.096.
この発明の電子電気機器導電部品材料としてのァ ルミニゥ厶合金は、 基本的には以上の M g、 S i を
Figure imgf000008_0001
The aluminum alloy as a conductive component material of the electronic / electric device of the present invention basically has the above Mg and Si.
Figure imgf000008_0001
待性を確保できるが、 より一層の特性向上を図るた め、 第 2発明およぴ第 4発明においてはさらに C u、 Z π·のうちの 1種または 2種が含有され、 また第 3 発顼 ¾? 第 '発项 て¾ ^ M 、 G r、 Z「、 V、 N i のうちの Ί種または 2種以上が含有 される。 これらの元素の添加理由および限定理由は  Although the waiting time can be ensured, in order to further improve the characteristics, the second and fourth inventions further contain one or two of Cu and Zπ. '项 项 项 项 M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M.
C u ： C u:
C uはメッキ性やはんだ付け性をより一層向上さ せるために有効な元素である。 C uが 0.01 %未満 ではその効果が充分に得られず、 一方 3.0%を越え て含有されれば耐食性が低下する。 したがって C u は 0.01 〜 3.0%の範囲内とした。 なお C Uは、 こ の範囲内でも特に 0.59 を越えて含有させることが メ ツキ性、 ハンダ性の向上の観点から好ましい。 Z n ： Cu further improves plating and soldering properties It is an effective element for causing If Cu is less than 0.01%, the effect cannot be sufficiently obtained, while if it exceeds 3.0%, the corrosion resistance decreases. Therefore, Cu was set in the range of 0.01 to 3.0%. In addition, CU is preferably contained in this range exceeding 0.59 particularly from the viewpoint of improving the solderability and the solderability. Z n:
Z nもメ ツキ性やはんだ付け性をより一層向上さ せるために有効な元素である。 Z nが 0.01 %未満 ではその効果が充分に得られず、 一方 3.096を越え て含有されれば耐食性が低下する。 したがって Z n は 0.01 〜 .3.0?/0の範囲内とした。 Zn is also an effective element for further improving the plating properties and solderability. If Zn is less than 0.01%, the effect cannot be sufficiently obtained, while if it exceeds 3.096, the corrosion resistance decreases. Therefore, Zn was set in the range of 0.01 to .3.0? / 0 .
VI n ：  VI n:
VI nは中間焼鈍時 （溶体化処理時〉 の再結晶粒を 微細化し、 より一層の強度向上および耐熱性 （耐軟 化性） の向上を図るに有効な元素である。 ： M nが 0.01 96禾満ではこれらの効果が充分に得られず、 一万 3.0%を越えて含有させても強度向上および耐 熱性向上の効果は飽和し、 また铸造時に巨大化合物 を生成し易くなる。 したがって' M Πは 0.01 〜 3.0 VI n is an element effective for refining the recrystallized grains during the intermediate annealing (during the solution treatment) to further improve the strength and heat resistance (softening resistance): M n is 0.01 These effects cannot be obtained sufficiently at 96 germs, and even if the content exceeds 103.0%, the effects of improving strength and heat resistance are saturated, and a large compound is easily produced during production. M 0.01 is 0.01 to 3.0
？ の範囲内とした。 ? Within the range.
C r ： C r:
G rも中間焼鈍時 （溶体化処理時〉 の再結晶粒を 微細化して、 強度および耐熱性を一層向上させるに 有効な元素である。 C「が %未満ではこれら の効果が充'分に得"られず、 一方 0.30 %を前えて含 有させても強度向上および耐熱性向上の効果は飽和 し、 また籙造時に巨大な化合物を生成し易くなる。 5 したがって C「は ひ.01 〜 0.30 96の範囲内とした , Z「 ： G also refines the recrystallized grains during intermediate annealing (during solution treatment) to further improve strength and heat resistance. It is an effective element. If C is less than%, these effects cannot be obtained sufficiently. On the other hand, if the content is increased up to 0.30%, the effects of improving strength and heat resistance are saturated, and a huge compound may be produced during production. Easy to generate. 5 Therefore, C "was set within the range of 01 to 0.30 96, Z":
Z「¾再結晶粒の微細化および強度向上、 耐熱性 の向上に有効な元素である。 Z「が 0.01 %未満で - ：:は ら麵菜 ; 得ち ず、 — ^ 0. % ¾ - 0 越えて含有させても強度向上および耐熱性向上の効 果は飽和し、 また铸造時に巨大な化合物を生成し易 ぐなるから、 Ζ「は 0.01 〜 Q.30 %の範囲内とし た。  Z "¾ is an element effective for refining recrystallized grains, improving strength, and improving heat resistance. When Z" is less than 0.01%,-:: Harana; Not obtained, — ^ 0.% ¾- Even if the content exceeds 0, the effect of improving strength and heat resistance is saturated, and it becomes easy to form a huge compound at the time of fabrication. Therefore, Ζ was set within the range of 0.01 to Q.30%.
V ： V:
¾ w m ^ 養洵上 香熟性 ¾ w m ^ Yojun
向上に有効な元素である。 Vが 0.01 %未満ではこ れらの効果が充分に得られず、 一方 0.30 %を越え て含有されても強度向上および耐熱性向上の効果は m し、 た凝 荷 管大 合物を生锒 易ぐなる 0 から、 Vは 0.01 〜 0.30 の範囲内に限定した。  It is an element effective for improvement. If V is less than 0.01%, these effects cannot be sufficiently obtained. On the other hand, if the content exceeds 0.30%, the effect of improving the strength and heat resistance can be reduced by m, and a condensed tube compound is produced. From 0, which is easy, V is limited to the range of 0.01 to 0.30.
( ：  (:
^ 〗あ ¾の Mi化 よ »度向.上、 耐熟性 向上に有効な元素である。 iが 0.01 %未満では これらの効果が充分に得られず、 一方 5.7%を越え て多量に含有させても強度向上および耐熟性向上の 効果は飽和し、 また铸造時に巨大な化合物を生成し 易くなるから、 N i は 0. 01 〜 5. 7%の範囲内とし た。 ^ It is an element that is effective for improving the maturation resistance. If i is less than 0.01%, these effects cannot be obtained sufficiently, while exceeding 5.7% Even if it is contained in a large amount, the effect of improving strength and ripening resistance is saturated, and a huge compound is easily produced during fabrication. Therefore, Ni is set in the range of 0.01 to 5.7%.
以上の各成分のほかは A ぉよび不可避的不純物 とすれば艮ぃ。 不可避的不純物としては F eが含有 されるのが通常であるが、 F eは 0. 60 %程度以下 であればこの発明で対象とするリードフレーム材等 の電子電気機器導電部品材料として特に支障はない , そのほか、 アルミニウム合金錶塊の製造において は、 一般に铸塊結晶粒の微細化のために T i (チタ ン） 、 または T i および B (硼素〉 を添加すること が多いが、 この発明の材料の場合も丁 i 、 または T ！ および Bが添加されていても特にリードフレー ム材等の電子電気機器導電部品材料として支障はな い。 但しその添加量は、 T ！ 0. 2 %以下、 B 0. 04 %以下が望ましい。  Other than the above components, A and unavoidable impurities are Utogura. Fe is usually contained as an unavoidable impurity, but if Fe is about 0.60% or less, there is no particular problem as a material for conductive parts of electronic and electrical equipment such as lead frame materials, etc., which is the subject of the present invention. In addition, in the production of aluminum alloy lump, Ti (titanium) or Ti and B (boron) are generally added in order to refine the lump crystal grains. In the case of the above material, even if D, T, and B are added, there is no particular problem as a material for conductive parts of electronic and electrical equipment such as lead frame material, etc. However, the added amount is T! Below, B 0.04% or less is desirable.
またこの発明の系のアルミニウム基合金のように VI gを含有する A 合金の铸造にあたっては、 溶湯 の酸化を防止したりあるいは圧延性を改善する目的 で B e (ベリ リウム） を必要に応じて添加すること があるが、 この発明の材料の場合も B eを必要に応 じて 50ppin 程度以下添加することができる。  When producing an A alloy containing VI g, such as the aluminum-based alloy of the system of the present invention, Be (beryllium) is optionally added for the purpose of preventing the oxidation of the molten metal or improving the rollability. In some cases, Be may be added in the case of the material of the present invention, if necessary.
以上のような成分組成からなるこの発明の電子電 ro 機器導霉暴品材磐は .、 7ルミニ: :ム:基合金である ため、 従釆の 42合金やコバールあるいは C U系材料 などと比較して格段に安価であり、 しかも優れた耐 Ϊ欠化性、 良好な電気伝導性、 熟伝導性、 放熱性を有 し、 かつまた良好なはんだ付け性、 メツキ性と高い 璣械的強度、 良好な繰返し曲げ性を有しており、 し たがってこれらの特性が要求される I C、 半導体の リードフレー厶材ゃスィッチ、 コネクタ等の電子電 気機器'導電部- 用 材 として最雷である。 なお特 にリ一ドフレーム材においてワイヤボンディングを A I線で行なう場合にこの発明の材料をリードフレ ームとして使用すれば、 半導体素子取付部おょぴヮ ィャ接続部に A uメツキや A gメツキ等を施す必要 がなく、 その.まま ワイ ンデイ ダカが H.撒とな り、 半導体素子製造のコス卜をさらに下げることが できるというメ'リッ 卜 ¾ある。 The electronic component of the present invention having the above-described component composition ro Equipment materials are .7 and 7 Lumini :: Mu: base alloys, so they are much cheaper and more excellent than conventional 42 alloys, Kovar or CU-based materials. It has chipping properties, good electrical conductivity, good conductivity, heat dissipation, and also has good solderability, plating properties, high mechanical strength, and good bending properties. In addition, it is the lightest lightning as a material for conductive parts of electronic and electrical equipment such as ICs, semiconductor lead frame materials, switches and connectors that require these characteristics. If the material of the present invention is used as a lead frame especially when wire bonding is performed with an AI wire in a lead frame material, Au plating or Ag can be applied to the semiconductor element mounting portion connection portion. There is no need to apply plating, etc., and there is a merit in that, as it is, wire die squid is scattered as H., which can further reduce the cost of semiconductor device production.
製 造 方 法  Production method
U 棻,朋 量子 機器募墨 I品弒翁 ± Lて のアルミニウム蔓合金の製造方法について詳述する。  U 棻, 量子 募 方法 方法 方法 方法 方法 方法 方法 方法 方法 方法 方法 方法 方法 方法 方法 方法 方法 方法 方法 方法 方法 方法 方法 方法 方法 方法 方法 方法 方法 製造 方法 製造 製造 製造 製造 方法 製造 製造 方法 方法 方法 製造 方法 方法 製造 方法 製造 方法 製造 方法 方法 製造 方法
先ず前述のような成分組成のアルミニウム基合金 溶湯を常法にしたがって铸造する。 この铸造方法と u Xは竿運銃籙造法 { 铸造法 ー ¾釣 ある が、 省エネルギゃ耐軟化性の向上等の観点から薄板 運続铸造法 （運続铸造圧延法） を適用しても良い。 得られた铸塊に対しては、 均熟処理 （均質化処理〉 および熟間圧延を行ない、 必要に応じて冷間圧延、 中間焼鈍 （溶体化処理〉 、 最終冷間圧延を行なって 厚さ 0. 1〜 0. 5纖程度の圧延板とする。 但し薄板運 続铸造钣の場合は、 これらの工程のうち熱間圧延ま での工程を省略することができる。 First, a molten aluminum-based alloy having the above-described composition is prepared according to a conventional method. This construction method and uX are based on the rod gun construction method (the construction method-fishing), but from the viewpoint of energy saving and improvement of softening resistance, the thin plate continuous construction method (continuous construction rolling method) is applied. Is also good. The obtained ingot is subjected to a soaking process (homogenizing process) and a hot rolling process, and if necessary, a cold rolling process, an intermediate annealing process (solution treatment process), and a final cold rolling process. Rolled plate of about 0.1 to 0.5 Fiber However, in the case of continuous thin plate manufacturing, the steps up to hot rolling among these steps can be omitted.
上記各工程のうち、 均熱処理は 450〜 600°Cの温 度にて 時間以内保持すれば良い。 均熱温度が 450 Ό禾満では熟間圧延性が低下し、 一方均熟温度が 600 Cを越えれば共晶溶融が発生し易くなる。 また 保持時間が 48時間を越しても均熱による組織の均質 化効果はほとんど飽和し、 エネルギコス卜の増大を 招くだけである。  In each of the above steps, the uniform heat treatment may be performed at a temperature of 450 to 600 ° C. within a period of time. When the soaking temperature is 450 ° C, the ripening rollability decreases, while when the soaking temperature exceeds 600 C, eutectic melting tends to occur. Even if the holding time exceeds 48 hours, the effect of homogenizing the structure by soaking becomes almost saturated, only increasing the energy cost.
均熟処理後は通常は再加熟してから熟間圧延を行 なう。 この再加熱は、 常法に従って 400〜 550°Cで 行ない、 熟間圧延も 40ひ〜 550。Cで行なえば良い。 なお均熟処理 （均質化処理〉 と熟間圧延のための加 熱処理は、 上述のように個別に行なう必要はなく、 均質化処理と熟間圧延のための加熱を兼ねて Ί 回の 加熱処理を行ない、 引続いて熱間圧延を行なって ¾ 良い。  After the soaking treatment, the steel sheet is usually re-ripened and then subjected to hot rolling. This reheating is carried out at 400 to 550 ° C according to a conventional method, and the forging is also performed at 40 to 550 ° C. You can do it in C. Note that it is not necessary to separately perform the soaking treatment (homogenization treatment) and the heat treatment for the hot rolling as described above. And then hot rolling 圧 延 is good.
熟間圧延終了後は、 必要に応じて一次冷間圧延を 施した後、 中間焼鈍 （溶体化処理） を施し、 さらに 最終冷間圧延を行なう。 ここで ra間焼鈍は、 M g、 S I による時効硬化性 を与えるべく I g、 S i を予め'固溶させておくた めのものであって、 一般の J IS 6000系合金の溶体化 処理条件に準じた条件で行なえば良い。 すなわち焼 h 鈍温度は 48G〜 560°Cとし、 板厚によっても異なる がその焼鈍温度で 1時間以内保持し、 冷却速度 rcAfter the completion of the hot rolling, the steel sheet is subjected to primary cold rolling if necessary, then to intermediate annealing (solution treatment), and further to final cold rolling. Here, ra annealing is for pre-solidifying Ig and Si in order to give age hardenability by Mg and SI, and is a solution treatment of general JIS 6000 series alloy. What is necessary is just to carry out on the conditions according to conditions. In other words, the annealing temperature is set to 48G to 560 ° C, and although it varies depending on the sheet thickness, the annealing temperature is maintained within 1 hour, and the cooling rate rc
Z see以上で冷郜する。 冷卸速度が rc / see未満では 時効による硬化が少なく、 また同時に加工硬化性も 低く-な; ^か 6 m ^& ^ ^ u \00 なおコイル fォに对してこの中間焼鈍 （溶体化処理〉 を行なう場合は連続焼鈍炉を用いるのが通常である が、 連続焼鈍の場合は保持時間がほとんど零であつ ても、 その後の時効硬化性、 加工硬化性が著しく損 なわれることはない。 Cool above Z see. If the cooling rate is less than rc / see, the hardening due to aging is small and the work hardenability is also low. ^ Or 6 m ^ & ^ ^ u \ 0 0 Note that this intermediate annealing (solution In general, a continuous annealing furnace is used when performing aging treatment.However, in the case of continuous annealing, even if the holding time is almost zero, the subsequent age hardening and work hardening will not be significantly impaired. Absent.
こ^ょう 間誦 潜， n理) 儘しだ後、 冷間圧延を施す。 この冷間圧延は、 所要の板厚とす るためばかりでなく、 加工硬化による強度向上のた めに必要である。 最終圧延板の強度は、 リードフレ 一ム对等の 露璣器筹著部 と υ 引鞭強さ0 で 30k5f Z 以上、 耐力で 25l¾f ZM以上が必要である が、 この発明のアルミニウム基合金の場合、 冷間圧 、延後 )dE延弒 癢^し Γ」充分 こ 直を確保す ることができる。 なお上記の強度を確保できるなら ば、 耐繰返し曲げ性をさらに向上させるために最終 冷間圧延後に 1 0(TC以上で最終焼鈍を行なっても良 い。 After being left as it is, it is cold rolled. This cold rolling is necessary not only to obtain the required thickness, but also to increase the strength by work hardening. The strength of the final rolled plate must be at least 30k5fZ at a whip strength of 0 and at least 25l¾fZM at proof strength, and the aluminum base alloy of the present invention. , Cold pressure, after rolling) dE 弒 癢 ^ 充分 充分 充分 充分. If the above strength can be secured, the final strength is required to further improve the cyclic bending resistance. After cold rolling, final annealing may be performed at 10 (TC or more.
発明を実施するための最良の形態  BEST MODE FOR CARRYING OUT THE INVENTION
第 Ί 表に示 本発明合金及び比較合金を通常の半 運続铸造 ¾ ¾しくは薄板運続铸造法 （連続铸造圧延） により铸造した。 半運続铸造した铸塊は、 各面を面 削して厚さ ¾ 00. 、 幅 1 000腳、 長さ 3500細とし、 第 2表に示す製造条件 〜： \'0. 3で 0. 30 腳厚の圧延 板とした。 運続铸造の場合は铸造板の厚さは 4應と し、 第 2表の ¾ 4もしくは to. 5に示す製造条件で 0. 30 聊板厚の圧延板とした。  The alloys of the present invention and the comparative alloys shown in Table 1 were produced by a normal semi-continuous production process or a continuous sheet production process (continuous production rolling). The semi-continuously manufactured ingot is beveled on each side to a thickness of ¾00., A width of 1 000 腳, and a length of 3500. The production conditions shown in Table 2 A 30 mm thick rolled plate was used. In the case of continuous production, the thickness of the forged plate was 4 mm, and the rolled plate had a thickness of 0.30 mm under the manufacturing conditions shown in 4 or to.
これらのアルミニウム合金圧延板について、 機械 的性質及び耐軟化性、 導電率、 メツキ性、 はんだ付 け性について調査した。 その結果を第 3表に示す。  The rolled aluminum alloy sheets were examined for mechanical properties, softening resistance, electrical conductivity, plating properties, and solderability. Table 3 shows the results.
なおここで機械的性質としては、 圧延材の性能を 調査した。  As for the mechanical properties, the performance of the rolled material was investigated.
また一般にリードフレーム材のダイボンディング において p D — S nはんだを用いる場合は不活性ガ ス甲で 200〜 30(TCで数秒間の熱処理を行なうこと から、 酎欠化性としては、 250°C X 5分間の熱処理 を施してその熱処理後の引張強さを測定した。  In general, when using pD-Sn solder for die bonding of lead frame materials, the inert gas layer is heat treated at 200 to 30 (TC for several seconds. Heat treatment was performed for 5 minutes, and the tensile strength after the heat treatment was measured.
さらに、 アルミニウム合金の場合、 A Uや A g等 のメ ツキを施すにあたってメツキを健全に行なうた めには一般にメ ツキ前に予め表面処理を行なう必要 • n がある。 またはんだを付ける場合も表面処理を事前 に行なうておげぼはんだが付き易く、 はんだ付け部 の剥離が生じにくくなる。 このような事前の表面処 理としては一殺に '; ί メツキや c uメツキがあり、 さらにこの表面処理の前処理としてはジンケー卜処 運が有効である。 このジンケー 卜処理時の Ζ ηの分 布が均一であるほど、 そのジンケー卜処理面上への i や C uのメッキ性が良好となり、 さらにその上
Figure imgf000016_0001
In addition, in the case of aluminum alloy, in order to apply plating such as AU and Ag, it is generally necessary to perform a surface treatment before plating in order to perform the plating properly. • There is n. Also, when solder is applied, the surface treatment is performed in advance, so that the solder is easily attached and the soldered portion is less likely to peel. Such preliminary surface treatments can be killed by; 'ί ί plating and cu plating, and zincate treatment is effective as a pretreatment for this surface treatment. The more uniform the distribution of ηη during the zincate treatment, the better the plating properties of i and Cu on the zincate treated surface.
Figure imgf000016_0001
良好となる。 そこでこの実施例においても、 メツキ 性やはんだ ίォけ性を判定するために圧延板にジンケ It will be good. Therefore, in this example, too, the rolled plate was coated with a zinc alloy to determine the solderability and the solderability.
―卜処理を施してそのジンケー卜処理面の Ζ ηの分 布を光学顕微鏡で観祭し、 Ζ ηの分布か均一な順に 〇、 Δ、 Xと評 ffiした。 厶以上であればメツキ性や んだ有 判 ¾される。 なお^の^ ンケー卜処理条件は、 次の通りである。 Then, the distribution of ηη on the zincate treated surface was observed with an optical microscope, and the distribution of か η was evaluated as Ζ, Δ, X in a uniform order. If it is more than 厶, it is judged to be bad. Note that the ^ condition processing of ^ is as follows.
浴 組 成 ： a O H 525 ^ X £ 酸化亜鉛  Bath composition: a O H 525 ^ X £ Zinc oxide
m 度 v  m degrees v
浸置時間 ： 30秒  Immersion time: 30 seconds
また繰返し曲げ性は、 0. 30 舰の圧延材を 90° 片 蘼返.：し ^鏃顯こ: る ^の往復 回数を測定した。 この繰返し曲げ性は 5回以上あれ ば性能上間題はない。 第 Ί The repeatability was measured by measuring the number of reciprocations of a 0.30 mm rolled material 90 ° one way. There is no problem in performance if the repetitive bendability is 5 times or more. No. Ί
Figure imgf000017_0001
Figure imgf000017_0001
Figure imgf000018_0001
Figure imgf000018_0001
*1 ： 炉の下方に水槽があり、 水焼入れを行なう事ができるバッチタイプの工業規模の烷鈍炉 * 1: A batch-type industrial-scale annealing furnace that has a water tank below the furnace and can perform water quenching.
第 3 表 Table 3
Figure imgf000019_0001
第 3表から明らかなように、 この発明による電子 電気機器導電 品材料としてのアルミニウム基合金 は、 圧延材での強度が引張り強さ 30l¾f Z腿2以上で充 分な強度を有しており、 しかも 250°C X 5分間の熟 処理後も 3 Q !¾f / 以上の引張強さを確保することが でき、 したがって耐熱性も良好であり、 さらに線返 し曲げ性も良好であり、 また導電率は従来のリード フレームォである 42合金と比較して格段に高くて、 疣熟 塾 綠姓^ 気©導性^«れ.、 ジン ケー卜処理時の Z Πの均一性が良好であることから、 メ Vキ性やはんだ付け性に優れることが判る。 なお 第 3表中には特に示さなかったが、 耐食性も優れて いることが確認されている。
Figure imgf000019_0001
As is evident from Table 3, the aluminum-based alloy as a conductive material for electronic and electrical equipment according to the present invention has sufficient strength with a rolled material having a tensile strength of 30 l 腿 f Z 2 or more. In addition, a tensile strength of 3 Q! ¾f / or more can be secured even after aging at 250 ° C for 5 minutes, so that the heat resistance is good, and the wire bending bendability is good, and the conductivity is good. Is significantly higher than the conventional lead frame alloy 42, because of its good uniformity of Z Π during zincate treatment. It can be seen that it has excellent plating and soldering properties. Although not particularly shown in Table 3, it was confirmed that the corrosion resistance was excellent.
産業上の利用可能性  Industrial applicability
こ 発 毒子電気猶^ 電都 枒.料 、 ¾来の 42合金やコバ一ルあるいは C U系材料などと比較し て格段に安価であり、 しかも優れた耐軟化性、 良好 な電気伝導性、 熟伝導性、 放熱性を有し、 かつまた 好な'は だ け性、 メ キ性と高裔着械的強度、 良好な繰返し曲げ性を有しており、 したがつてこれ らの特性が要求される I C、 L S I、 S C R、 その 他各獯竽導体^) #一?ド 7»レ一 材 スィ チ、 ュネ クタ等の電子電気機器導電部品用の材料として最適 である。 なお特にリードフレーム材においてワイヤ ボンディングを A 線で行なう場合にこの発明の材 料をリードフレームとして使用すれば、 半導体素子 取付部およびワイヤ接続部に A uメツキや A gメッ キ等を施す必要がなく、 そのままでワイヤボンディ ングが可能となり、 半導体素子製造のコス卜をさら に下げることがでぎる。 This poison electric power is much cheaper than conventional 42 alloy, Kovar or CU material, and has excellent softening resistance and good electrical conductivity. It has good conductivity, heat dissipation, and good repellency, good mechanical properties, high mechanical strength, and good repetitive bending properties. ICs, LSIs, SCRs, and other conductors that are required. These are suitable as materials for conductive parts of electronic and electrical equipment, such as switches and connectors. In particular, wire If the material of the present invention is used as a lead frame when bonding is performed using the A-line, there is no need to apply Au plating or Ag plating to the semiconductor element mounting portion and wire connection portion, and wire bonding can be performed as it is. This makes it possible to further reduce the cost of manufacturing semiconductor devices.

Claims

請 求 の 範 囲 The scope of the claims
. Mg o.z〜 3r % r重量％、 K HU および Mg o.z ~ 3r% r wt%, K HU and
S i 0.2〜 2.ひ 9 を含有し、 残部が A および不 可避的不純物よりなることを特徴とする電子電気 5 機器導電部品用材料。 A material for conductive parts of electronic and electric equipment, characterized by containing Si 0.2 to 2. 9 and the balance consisting of A and unavoidable impurities.
2. M g 0.2〜 3.096および S i 0.2〜 2.0%を含 有し、 かつ Gu 0.01 〜 3.0? 、 Z n 0.01 〜  2.Contains Mg 0.2-3.096 and Si 0.2-2.0%, and Gu 0.01-3.0 ?, Zn 0.01-
3.0%のうちの Ί種または 2種を含有し、 残部が , A t ょ¾» 遨 R純 ょ ¾K ^ 凝.徴 t0 する電子電気機器導電部品用材料。  Material for conductive parts of electronic and electrical equipment, containing at least one or two of 3.0%, with the balance being At R R R 純 K ¾.
3. VI g 0·2〜 3.0%および S i ひ.2〜 2.0%を含 有し、 かつ; Μ π 0.01 〜 3,G%、 C「 0.01 〜 ひ.30 %、 Z「 0.01 〜 0.3ひ ％、 V 0.01 〜 0.3ひ 3も、 ί 0.01 〜 5.7? のうちの Ί種また¾ ^ ^^香有し、 聽が^ ぉ 不！？避釣 不純物よりなることを特徴とする電子電気機器導 電部品用材料。  3.Contains VI g of 0.2 to 3.0% and Si of 2 to 2.0%; and π π 0.01 to 3G%, C `` 0.01 to 0.30, Z '' 0.01 to 0.3 %, V 0.01 ~ 0.3h3, ί0.01 ~ 5.7 ?, Ί kind or ¾ ^^^ has incense, listening is not ^ not! Materials for electronic components.
4. g 0.2〜 3.ひ％、 S i 0.2〜 2 0%を含有し、 かつ C u 〜 0:%< 0. 1 〜 ^§%の0 うちの Ί種または 2種と、 M n 0.01 〜 3.0%、 C「 0.01 〜 0.30 ?z0、 Z「 0.ひ1 〜 0.30 %、 V U! 〜 ). 、 ¾N j 〜 うち の；]種または 2種以上を含有し、 残部が A およ ぴ不可避的不純物よりなることを特徴とする電子 電気機器導電部品用材料。 4.g 0.2 ~ 3%, S i 0.2 ~ 20%, and Cu ~ 0 : % <0.1 ~ ^ §% of 0 or 2 and Mn 0.01 ~ 3.0%, C "0.01 ~ 0.30? Z 0 , Z" 0 .1 ~ 0.30%, VU! ~)., ¾ N j ~ of which species;電子 Electrons characterized by unavoidable impurities Materials for conductive parts of electrical equipment.
PCT/JP1987/000717 1986-10-01 1987-09-30 Material for conductive parts of electronic and electric appliances WO1988002411A1 (en)

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JP61233454A JPS6389640A (en) 1986-10-01 1986-10-01 Conductive parts material for electronic and electrical equipment

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US5302342A (en) * 1989-11-17 1994-04-12 Honda Giken Kogyo Kabushiki Kaisha Aluminum alloy for heat exchangers
EP1138076A4 (en) * 1999-05-12 2005-01-26 Koninkl Philips Electronics Nv Methods and compositions for improving interconnect metallization performance in integrated circuits
WO2012007136A1 (en) * 2010-07-13 2012-01-19 Phoenix Contact Gmbh & Co. Kg Clamping body for an electric conductor
WO2015166407A1 (en) * 2014-04-28 2015-11-05 Ennio Corrado Electrical connector comprising a contact element of an aluminium based alloy
CN114645163A (en) * 2022-03-24 2022-06-21 中铝东南材料院（福建）科技有限公司 Aluminum alloy plate for automobile highlight exterior decoration and manufacturing method thereof
EP3914747A4 (en) * 2019-01-25 2022-11-02 Rio Tinto Alcan International Limited Foundry alloys for high-pressure vacuum die casting

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JPH0717982B2 (en) * 1986-10-09 1995-03-01 スカイアルミニウム株式会社 Conductive rolled material for leadframes, connectors or switches
JP5254764B2 (en) * 2002-03-01 2013-08-07 昭和電工株式会社 Al-Mg-Si alloy material
WO2003074750A1 (en) 2002-03-01 2003-09-12 Showa Denko K.K. PROCESS FOR PRODUCING Al-Mg-Si ALLOY PLATE, Al-Mg-Si ALLOY PLATE AND Al-Mg-Si ALLOY MATERIAL
JP6090167B2 (en) * 2011-11-02 2017-03-08 住友電気工業株式会社 Aluminum alloy plate for terminals, terminal fittings, and terminal connection structure for electric wires
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US5302342A (en) * 1989-11-17 1994-04-12 Honda Giken Kogyo Kabushiki Kaisha Aluminum alloy for heat exchangers
EP1138076A4 (en) * 1999-05-12 2005-01-26 Koninkl Philips Electronics Nv Methods and compositions for improving interconnect metallization performance in integrated circuits
WO2012007136A1 (en) * 2010-07-13 2012-01-19 Phoenix Contact Gmbh & Co. Kg Clamping body for an electric conductor
CN103052730A (en) * 2010-07-13 2013-04-17 菲尼克斯电气公司 Clamping body for electric conductor
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WO2015166407A1 (en) * 2014-04-28 2015-11-05 Ennio Corrado Electrical connector comprising a contact element of an aluminium based alloy
EP3914747A4 (en) * 2019-01-25 2022-11-02 Rio Tinto Alcan International Limited Foundry alloys for high-pressure vacuum die casting
CN114645163A (en) * 2022-03-24 2022-06-21 中铝东南材料院（福建）科技有限公司 Aluminum alloy plate for automobile highlight exterior decoration and manufacturing method thereof

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