JPH05306421A - Cu alloy lead material for semiconductor device - Google Patents
Cu alloy lead material for semiconductor deviceInfo
- Publication number
- JPH05306421A JPH05306421A JP3206445A JP20644591A JPH05306421A JP H05306421 A JPH05306421 A JP H05306421A JP 3206445 A JP3206445 A JP 3206445A JP 20644591 A JP20644591 A JP 20644591A JP H05306421 A JPH05306421 A JP H05306421A
- Authority
- JP
- Japan
- Prior art keywords
- lead material
- alloy
- semiconductor device
- alloy lead
- conductivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Conductive Materials (AREA)
Abstract
Description
【０００１】[0001]
【従来の技術】従来、一般に、ＩＣやＬＳＩなどの半導
体装置の製造法の１つに、（ａ）まず、リード素材とし
て厚さ：０．１〜０．３mmのＣｕ合金条材を用意し、
（ｂ）このリード素材から製造しようとする半導体装置
の形状に適合したリードフレームを打抜き加工により形
成し、（ｃ）このリードフレームの所定箇所に高純度Ｓ
ｉやＧａ−Ａｓなどの半導体素子を、Ａｇペーストなど
の導電性樹脂を用いて加熱接着するか、あるいは予め上
記リード素材の片面にめっきしておいたＡｕ，Ａｇ，Ｎ
ｉ，あるいはこれらの複合めっき層を介して加熱拡散圧
着するかし、（ｄ）上記の半導体素子とリードフレーム
とに渡ってＡｕ線などによるワイヤボンディング（結
線）を施し、（ｅ）上記の半導体素子、結線、および半
導体素子が取り付けられた部分のリードフレームなど
を、これらを保護する目的でプラスチック封止し、
（ｆ）最終的に、上記リードフレームにおける相互に連
なる部分を切除してリード材とする、以上（ａ）〜
（ｆ）の主要工程からなる方法が知られている。2. Description of the Related Art Conventionally, in one of the methods for manufacturing semiconductor devices such as IC and LSI, (a) first, a Cu alloy strip having a thickness of 0.1 to 0.3 mm is prepared as a lead material. ,
(B) A lead frame conforming to the shape of a semiconductor device to be manufactured from this lead material is formed by punching, and (c) high purity S is formed at a predetermined position of this lead frame.
A semiconductor element such as i or Ga-As is heat-bonded by using a conductive resin such as Ag paste, or Au, Ag, N plated on one side of the lead material in advance.
i, or by heat diffusion bonding through a composite plating layer of these, (d) wire bonding (wiring) with Au wire or the like is performed across the semiconductor element and the lead frame, and (e) the semiconductor described above. The element, wiring, and lead frame of the part where the semiconductor element is attached are sealed with plastic for the purpose of protecting them,
(F) Finally, parts of the lead frame that are continuous with each other are cut off to obtain a lead material.
A method comprising the main steps of (f) is known.
【０００３】したがって、半導体装置のリード材となる
Ｃｕ合金リード素材には、（１）良好なプレス打抜き
性、（２）半導体素子の加熱接着あるいは加熱拡散圧着
に際して熱歪および熱軟化が生じない耐熱性、（３）良
好な放熱性と導電性、（４）半導体装置の輸送あるいは
電気機器への組込みに際して曲がりや繰り返し曲げによ
って破損が生じない強度、が要求され、特性的には、 引張強さ：５０kgｆ／mm2 以上、 伸び：４％以上、 導電率（放熱性、すなわち熱伝導性は導電率で換算評価
される）：１３％ＩＡＣＳ以上、 軟化点（耐熱性の評価に用いられる）：３５０℃以上、 を具備することが必要とされるが、これらの特性を有す
るＣｕ合金リード素材としては材料的に多数のものが提
案され、実用に供されている。Therefore, the Cu alloy lead material used as the lead material of the semiconductor device has (1) good press punchability, (2) heat resistance that does not cause thermal strain and thermal softening during heat bonding or heat diffusion bonding of semiconductor elements. And (3) good heat dissipation and conductivity, and (4) strength that does not cause damage due to bending and repeated bending when transporting semiconductor devices or incorporating them in electrical equipment. Tensile strength is characteristic. : 50 kgf / mm 2 or more, Elongation: 4% or more, Conductivity (heat dissipation, that is, thermal conductivity is evaluated by conversion as conductivity): 13% IACS or more, Softening point (used for evaluation of heat resistance): It is necessary to have a temperature of 350 ° C. or higher, but many Cu alloy lead materials having these characteristics have been proposed and put into practical use.
【０００４】[0004]
【発明が解決しようとする課題】しかし、近年の半導体
装置における集積度の益々の向上に伴って、Ｃｕ合金リ
ード素材には、上記の特性を具備した上で、さらに高い
放熱性、すなわち導電性が要求されるようになってお
り、この要求に十分対応できる特性を具備したＣｕ合金
リード素材の開発が強く望まれている。However, with the recent increase in the degree of integration in semiconductor devices, the Cu alloy lead material has the above-mentioned characteristics and further has a higher heat dissipation property, that is, a conductive property. Therefore, there is a strong demand for the development of a Cu alloy lead material having characteristics capable of sufficiently meeting this requirement.
【０００５】[0005]
【課題を解決するための手段】そこで、本発明者等は、
上述のような観点から、半導体装置用Ｃｕ合金リード素
材に要求される特性を具備した上で、さらに一段とすぐ
れた導電性を有するＣｕ合金リード素材を開発すべく研
究を行った結果、重量％で（以下％は重量％を示す）、 Ｍｇ：０．２５〜０．８５％、 を含有し、さらに必要に応じて、 Ｐ：０．０２〜０．７％、 Ｓｎ：０．０５〜０．５％、 のうちの１種を含有し、残りがＣｕと不可避不純物から
なる組成を有するＣｕ合金で構成されたリード素材は、 引張強さ：５１kgｆ／mm2 以上、 伸び：５％以上、 導電率：５２％ＩＡＣＳ以上、 軟化点：３６０℃以上、 の特性を有し、これらの特性を具備するＣｕ合金リード
素材は、集積度の高い半導体装置のリード材として十分
満足する性能を発揮するという研究結果を得たのであ
る。Therefore, the present inventors have
From the viewpoints described above, as a result of conducting research to develop a Cu alloy lead material having more excellent conductivity while having the characteristics required for the Cu alloy lead material for semiconductor devices, the weight% (Hereinafter,% means weight%), Mg: 0.25 to 0.85%, and, if necessary, P: 0.02 to 0.7%, Sn: 0.05 to 0. 5% of the lead material, the rest of which is composed of a Cu alloy having a composition of Cu and unavoidable impurities, has a tensile strength of 51 kgf / mm 2 or more, an elongation of 5% or more, and a conductive property. A Cu alloy lead material having characteristics such as a ratio: 52% IACS or higher, a softening point: 360 ° C. or higher, and having these characteristics are said to exhibit sufficiently satisfactory performance as a lead material for highly integrated semiconductor devices. I got the research result.
【０００６】この発明は、上記の研究結果にもとづいて
なされたものであって、以下に成分組成を上記の通りに
限定した理由を説明する。The present invention was made on the basis of the above-mentioned research results, and the reason why the component composition is limited as described above will be explained below.
【０００７】（ａ）Ｍｇ Ｍｇ成分には、高い導電性を保持した状態で、強度およ
び軟化点を向上させる作用があるが、その含有量が０．
２５％未満では前記作用に所望の効果が得られず、一方
その含有量が０．８５％を越えると導電性に悪影響が現
われるようになることから、その含有量を０．２５〜
０．８５％と定めた。(A) Mg The Mg component has a function of improving strength and softening point in a state where high conductivity is maintained, but its content is 0.
If it is less than 25%, the desired effect cannot be obtained, while if it exceeds 0.85%, the conductivity is adversely affected.
It was set at 0.85%.
【０００８】（ｂ）Ｐ Ｐ成分には、特に導電性を向上させる作用があるので、
必要に応じて含有されるが、その含有量が０．０２％未
満では、導電性に所望の向上効果が得られず、一方その
含有量が０．７％を越えると、かえって導電性に悪影響
が現われるようになることから、その含有量を０．０２
〜０．７％と定めた。(B) Since the P P component has a function of particularly improving conductivity,
It is contained as necessary, but if the content is less than 0.02%, the desired improvement effect on the conductivity cannot be obtained. On the other hand, if the content exceeds 0.7%, the conductivity is adversely affected. The content of 0.02
It was set to ~ 0.7%.
【０００９】（ｃ）Ｓｎ Ｓｎ成分には、強度と軟化点を一段と向上させる作用が
あるので、必要に応じて含有されるが、その含有量が
０．０５％未満では前記作用に所望の向上効果が得られ
ず、一方その含有量が０．５％を越えると導電性に悪影
響を及ぼすようになることから、その含有量を０．０５
〜０．５％と定めた。(C) Sn The Sn component has the effect of further improving the strength and softening point, so it is contained as necessary, but if the content is less than 0.05%, the desired improvement in the above function is achieved. The effect cannot be obtained, and on the other hand, if the content exceeds 0.5%, the conductivity is adversely affected.
It was set at 0.5%.
【００１０】[0010]
【実施例】つぎに、この発明のＣｕ合金リード素材を実
施例により具体的に説明する。通常の低周波溝型誘導炉
を用い、それぞれ表１に示される成分組成をもったＣｕ
合金溶湯を調製し、半連続鋳造法にて、厚さ：１５０mm
×幅：４００mm×長さ：１５００mmの寸法をもった鋳塊
とした後、この鋳塊に圧延開始温度：８００℃にて熱間
圧延を施して厚さ：１１mmの熱延板とし、ついで水冷
後、前記熱延板の上下両面を０．５mmづつ面削して厚
さ：１０mmとし、引続いてこれに通常の条件で冷間圧延
と焼鈍を交互に繰返し施し、仕上圧延率：７０％にて最
終冷間圧延を行なって厚さ：０．２５mmの条材とし、最
終的に２５０〜３５０℃の範囲内の所定温度に１５分間
保持の歪取り焼鈍を施すことによって本発明Ｃｕ合金リ
ード素材１〜１３をそれぞれ製造した。EXAMPLES Next, the Cu alloy lead material of the present invention will be specifically described with reference to Examples. Cu having the component composition shown in Table 1 was used with an ordinary low frequency groove type induction furnace.
Prepared molten alloy and semi-continuous casting method, thickness: 150mm
X width: 400 mm x length: 1500 mm After making an ingot, the ingot is hot-rolled at a rolling start temperature of 800 ° C to form a hot-rolled sheet having a thickness of 11 mm and then water-cooled. After that, the upper and lower surfaces of the hot-rolled sheet are chamfered by 0.5 mm each to a thickness of 10 mm, and subsequently, cold rolling and annealing are alternately repeated under normal conditions to obtain a finish rolling rate of 70%. Final cold-rolling is performed to form a strip having a thickness of 0.25 mm, and finally, the Cu alloy lead of the present invention is obtained by performing strain relief annealing for 15 minutes at a predetermined temperature within a range of 250 to 350 ° C. Materials 1 to 13 were manufactured respectively.
【００１１】[0011]
【表１】 [Table 1]
【００１２】ついで、この結果得られた本発明Ｃｕ合金
リード素材１〜１３について、引張強さ、伸び、導電
率、および軟化点を測定すると共に、はんだ密着性試験
を行なった。Then, with respect to the Cu alloy lead materials 1 to 13 of the present invention obtained as a result, tensile strength, elongation, conductivity, and softening point were measured, and a solder adhesion test was conducted.
【００１３】なお、はんだ密着性試験は、予めフラック
ス処理した試験片に、２３０℃に加熱溶融した６０％Ｓ
ｎ−４０％Ｐｂのはんだ融液に５秒間浸漬の条件ではん
だめっきを施し、引続いて大気中で１５０℃の温度に１
０００時間保持の条件で加熱し、加熱後の試験片に１８
０度の折り曲げ後、再び元に戻す曲げ加工を加え、試験
片曲げ部のはんだめっきの剥離状況を観察することによ
って行なった。これらの結果を表１に示した。The solder adhesion test is carried out by using a flux-treated test piece and heating it to 230 ° C. and melting it with 60% S.
Solder plating is performed under the condition of being immersed in a solder melt of n-40% Pb for 5 seconds, and subsequently at a temperature of 150 ° C in the atmosphere at 1
After heating under the condition of holding for 000 hours, the test piece after heating is
After bending at 0 degree, a bending process for returning to the original state was added, and the peeling state of the solder plating at the bent portion of the test piece was observed. The results are shown in Table 1.
【００１４】[0014]
【発明の効果】表１に示される結果から、本発明Ｃｕ合
金リード素材は、 引張強さ：５１kgｆ／mm2 以上、 伸び：５％以上、 導電率：５２％ＩＡＣＳ以上、 軟化点：３６０℃以上、 の特性、並びにすぐれたはんだ密着性を有し、高集積度
の半導体装置のリード素材に要求される特性を具備する
ことが明らかである。From the results shown in Table 1, the Cu alloy lead material of the present invention has a tensile strength of 51 kgf / mm 2 or more, an elongation of 5% or more, an electrical conductivity of 52% IACS or more, and a softening point of 360 ° C. As described above, it is clear that the above properties and excellent solder adhesion properties are provided, and the properties required for a lead material of a highly integrated semiconductor device are provided.
【００１５】上述のように、この発明のＣｕ合金リード
素材は、通常の半導体装置のＣｕ合金リード素材に要求
される強度、伸び、および軟化点を具備した上で、さら
に一段とすぐれた導電性を有し、良好なスタンピング性
およびエッチング性を具備することと相まって、通常の
半導体装置は勿論のこと、集積度の高い半導体装置のリ
ード素材としてすぐれた性能を発揮するものである。As described above, the Cu alloy lead material of the present invention has the strength, elongation, and softening point required for the Cu alloy lead material of the ordinary semiconductor device, and further has excellent conductivity. In addition to having excellent stamping property and etching property, it exhibits excellent performance as a lead material for not only ordinary semiconductor devices but also highly integrated semiconductor devices.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 桑原 萬平 福島県河沼郡河東町大字福島字大曲乙257 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Manpei Kuwahara 257 Omagari Otsu, Fukushima, Kato-cho, Kawanuma-gun, Fukushima Prefecture
Claims (3)
するＣｕ合金で構成したことを特徴とする半導体装置用
Ｃｕ合金リード素材。1. A Cu alloy lead material for a semiconductor device, which is composed of a Cu alloy containing Mg: 0.25 to 0.85% by weight and the balance being a composition of Cu and inevitable impurities.
するＣｕ合金で構成したことを特徴とする半導体装置用
Ｃｕ合金リード素材。2. A composition containing Mg: 0.25 to 0.85% by weight, P: 0.02 to 0.7% by weight, and the balance Cu and inevitable impurities. A Cu alloy lead material for semiconductor devices, which is composed of a Cu alloy.
するＣｕ合金で構成したことを特徴とする半導体装置用
Ｃｕ合金リード素材。3. A composition comprising Mg: 0.25 to 0.85% by weight, Sn: 0.05 to 0.5% by weight, and the balance Cu and inevitable impurities. A Cu alloy lead material for semiconductor devices, which is composed of a Cu alloy.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60126434A JPS61284946A (en) | 1985-06-11 | 1985-06-11 | Cu alloy lead blank for semiconductor device |
| JP3206445A JP2565029B2 (en) | 1985-06-11 | 1991-07-23 | Semiconductor device lead material |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60126434A JPS61284946A (en) | 1985-06-11 | 1985-06-11 | Cu alloy lead blank for semiconductor device |
| JP3206445A JP2565029B2 (en) | 1985-06-11 | 1991-07-23 | Semiconductor device lead material |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60126434A Division JPS61284946A (en) | 1985-06-11 | 1985-06-11 | Cu alloy lead blank for semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05306421A true JPH05306421A (en) | 1993-11-19 |
| JP2565029B2 JP2565029B2 (en) | 1996-12-18 |
Family
ID=26462619
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60126434A Granted JPS61284946A (en) | 1985-06-11 | 1985-06-11 | Cu alloy lead blank for semiconductor device |
| JP3206445A Expired - Lifetime JP2565029B2 (en) | 1985-06-11 | 1991-07-23 | Semiconductor device lead material |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60126434A Granted JPS61284946A (en) | 1985-06-11 | 1985-06-11 | Cu alloy lead blank for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (2) | JPS61284946A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005213629A (en) * | 2004-02-02 | 2005-08-11 | Nikko Metal Manufacturing Co Ltd | Method for heat treatment of copper alloy, and copper alloy and material |
| WO2015093317A1 (en) * | 2013-12-19 | 2015-06-25 | 住友電気工業株式会社 | Copper alloy wire, twisted copper alloy wire, electric wire, electric wire having terminal attached thereto, and method for producing copper alloy wire |
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|---|---|---|---|---|
| JP4756197B2 (en) * | 2005-08-23 | 2011-08-24 | Ｄｏｗａメタルテック株式会社 | Cu-Mg-P-based copper alloy and method for producing the same |
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| WO2017170699A1 (en) | 2016-03-30 | 2017-10-05 | 三菱マテリアル株式会社 | Copper alloy for electronic and electrical equipment, copper alloy plate strip for electronic and electrical equipment, component for electronic and electrical equipment, terminal, busbar, and movable piece for relays |
| WO2019189558A1 (en) | 2018-03-30 | 2019-10-03 | 三菱マテリアル株式会社 | Copper alloy for electronic/electric device, copper alloy sheet/strip material for electronic/electric device, component for electronic/electric device, terminal, and busbar |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4910894A (en) * | 1972-05-31 | 1974-01-30 | ||
| JPS52103316A (en) * | 1976-02-27 | 1977-08-30 | Furukawa Electric Co Ltd:The | Heat-resisting copper alloy having excellent electrical conductivity a nd thermal conductivity |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5834536B2 (en) * | 1980-06-06 | 1983-07-27 | 日本鉱業株式会社 | Copper alloy for lead material of semiconductor equipment |
| JPS57108235A (en) * | 1980-12-24 | 1982-07-06 | Sumitomo Electric Ind Ltd | Copper alloy for lead frame |
| JPS6039139A (en) * | 1983-08-12 | 1985-02-28 | Mitsui Mining & Smelting Co Ltd | Softening resistant copper alloy with high conductivity |
| JPS6046340A (en) * | 1983-08-23 | 1985-03-13 | Furukawa Electric Co Ltd:The | Copper alloy for lead frame |
| JPS6075541A (en) * | 1983-09-30 | 1985-04-27 | Tatsuta Electric Wire & Cable Co Ltd | Copper alloy having superior heat resistance, mechanical characteristic and electric conductivity |
| JPS60114556A (en) * | 1983-11-24 | 1985-06-21 | Mitsui Mining & Smelting Co Ltd | Production of copper-base alloy |
| JPS60245754A (en) * | 1984-05-22 | 1985-12-05 | Nippon Mining Co Ltd | High strength copper alloy having high electric conductivity |
| JPS61119660A (en) * | 1984-11-16 | 1986-06-06 | Nippon Mining Co Ltd | Manufacture of copper alloy having high strength and electric conductivity |
| JPS61266540A (en) * | 1985-05-21 | 1986-11-26 | Mitsubishi Electric Corp | Copper alloy |
| JPS61266541A (en) * | 1985-05-21 | 1986-11-26 | Mitsubishi Electric Corp | Copper alloy |
-
1985
- 1985-06-11 JP JP60126434A patent/JPS61284946A/en active Granted
-
1991
- 1991-07-23 JP JP3206445A patent/JP2565029B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4910894A (en) * | 1972-05-31 | 1974-01-30 | ||
| JPS52103316A (en) * | 1976-02-27 | 1977-08-30 | Furukawa Electric Co Ltd:The | Heat-resisting copper alloy having excellent electrical conductivity a nd thermal conductivity |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005213629A (en) * | 2004-02-02 | 2005-08-11 | Nikko Metal Manufacturing Co Ltd | Method for heat treatment of copper alloy, and copper alloy and material |
| WO2015093317A1 (en) * | 2013-12-19 | 2015-06-25 | 住友電気工業株式会社 | Copper alloy wire, twisted copper alloy wire, electric wire, electric wire having terminal attached thereto, and method for producing copper alloy wire |
| JPWO2015093317A1 (en) * | 2013-12-19 | 2017-03-16 | 住友電気工業株式会社 | Copper alloy wire, copper alloy twisted wire, electric wire, electric wire with terminal, and method for producing copper alloy wire |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0478701B2 (en) | 1992-12-11 |
| JPS61284946A (en) | 1986-12-15 |
| JP2565029B2 (en) | 1996-12-18 |
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