JPS6213823B2 - - Google Patents

Info

Publication number
JPS6213823B2
JPS6213823B2 JP55183967A JP18396780A JPS6213823B2 JP S6213823 B2 JPS6213823 B2 JP S6213823B2 JP 55183967 A JP55183967 A JP 55183967A JP 18396780 A JP18396780 A JP 18396780A JP S6213823 B2 JPS6213823 B2 JP S6213823B2
Authority
JP
Japan
Prior art keywords
weight
alloy
copper
conductivity
solderability
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55183967A
Other languages
Japanese (ja)
Other versions
JPS57109357A (en
Inventor
Masahiro Tsuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eneos Corp
Original Assignee
Nippon Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining Co Ltd filed Critical Nippon Mining Co Ltd
Priority to JP18396780A priority Critical patent/JPS57109357A/en
Publication of JPS57109357A publication Critical patent/JPS57109357A/en
Publication of JPS6213823B2 publication Critical patent/JPS6213823B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49579Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Conductive Materials (AREA)

Description

【発明の詳細な説明】 本発明はトランジスタや集積回路(IC)など
の半導体機器のリード材に適する銅合金に関する
ものである。 従来、半導体機器のリード材としては熱膨張係
数が低く、素子およびセラミツクスとの接着およ
び封着性の良好なコバール合金、42合金などの高
ニツケル合金が好んで使われてきた。しかし、近
年、半導体回路の集積度の向上に伴い、消費電力
の高いICが多くなつてきたため、使用されるリ
ード材も放熱性の良い、すなわち熱伝導性の良好
な銅基合金が使われるようになつてきた。しかし
ながら、リード材としては熱伝導性が良い、耐熱
性が良い、ハンダ付け性・メツキ密着性が良い、
強度が高い、廉価である等の諸条件をすべて満足
した銅基合金は見当らない。従来より使用されて
いる無酸素銅、りん青銅、すず入り銅、鉄入り銅
などの銅基合金は何れも一長一短があり、必ずし
も満足し得るものではない。本発明はかかる点に
鑑み、従来の銅基合金のもつ欠点を起良し、半導
体機器のリード材として好適な諸特性を有する銅
合金を提供するものである。 本発明はNi0.4〜4.0重量%、Si0.1を超え〜1.0
重量%を含み、残部が銅および不可避不純物より
なることを特徴とする半導体機器のリード材用銅
合金である。本発明に係る合金はリード材に要求
される放熱性、耐熱性、強度、ハンダ付け性・メ
ツキ密着性等のすべてが良好なるものである。 次に本発明合金を構成する合金組成範囲の限定
理由を説明する。Ni含有量を0.4〜4.0重量%とす
る理由は、Ni含有量が0.4重量%未満ではSiを0.1
重量%を超えて添加しても高強度でかつ高導電性
を示す合金が得られず、逆にNi含有量が4.0重量
%を超えると、加工性の低下が著しくなり、ハン
ダ付け性も低下する為である。Si含有量を0.1を
超え〜1.0重量%とした理由はSi含有量が0.1重量
%以下ではNiを0.4重量%以上添加しても高強度
でかつ高導電性を示す合金が得られず、Si含有量
が1.0重量%を超えると、加工性、導電性の低下
が著しくなり、またハンダ付け性も低下する為で
ある。Cuは残部とする。 実施例 第1表に示される本発明合金に係る各種成分組
成のインゴツトを高周波大気溶解で溶製後、800
℃で熱間圧延し、厚さ4mmの板とした。次にこの
板を通常の酸洗処理した後、冷間圧延で厚さ1.0
mmとした。さらに750℃にて5分間の焼鈍を施し
た後、冷間圧延で厚さ0.4mmの板とした。最後
に、この板を450℃にて1時間熱処理し、試料と
した。このようにして調整された試料の評価とし
て、強度は引張試験、耐熱性は加熱時間30分にお
ける軟化開始温度、導電性(放熱性)は電気伝導
率(%IACS)によつて示した。なお、熱伝導度
は導電率と比例関係にあるので導電率の測定で伝
熱性を評価した。ハンダ付け性は垂直式浸漬法で
230℃のハンダ浴(すず60−鉛40)に5秒間浸漬
し、ハンダのぬれの状態を目視観察した。これら
の結果を比較合金とともに第1表に示した。 第1表に示すごとく本発明に係る合金は、十分
な導電性とすぐれた耐熱性、強度およびハンダ付
け性を兼ね具えることが明らかであり、本発明の
特許請求範囲に記載する合金は電子部品材料、特
に半導体機器リード材として最適な合金である。 【表】
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a copper alloy suitable as a lead material for semiconductor devices such as transistors and integrated circuits (ICs). Conventionally, high nickel alloys such as Kovar alloy and 42 alloy have been preferred as lead materials for semiconductor devices because of their low coefficient of thermal expansion and good adhesion and sealing properties with elements and ceramics. However, in recent years, as the degree of integration of semiconductor circuits has improved, the number of ICs with high power consumption has increased, so the lead materials used are also copper-based alloys with good heat dissipation properties, that is, good thermal conductivity. I'm getting used to it. However, as a lead material, it has good thermal conductivity, good heat resistance, and good solderability and plating adhesion.
No copper-based alloy has been found that satisfies all conditions such as high strength and low cost. Conventionally used copper-based alloys such as oxygen-free copper, phosphor bronze, tin-containing copper, and iron-containing copper all have advantages and disadvantages, and are not necessarily satisfactory. In view of the above, the present invention aims to overcome the drawbacks of conventional copper-based alloys and provide a copper alloy having various properties suitable as a lead material for semiconductor devices. The present invention has Ni0.4~4.0% by weight, Si over 0.1~1.0
% by weight, with the remainder consisting of copper and unavoidable impurities. The alloy according to the present invention has good heat dissipation, heat resistance, strength, solderability, plating adhesion, etc. all required for lead materials. Next, the reason for limiting the alloy composition range constituting the alloy of the present invention will be explained. The reason why the Ni content is set to 0.4 to 4.0% by weight is that when the Ni content is less than 0.4% by weight, the Si is reduced to 0.1% by weight.
Even if the Ni content exceeds 4.0% by weight, an alloy with high strength and high conductivity cannot be obtained.On the other hand, if the Ni content exceeds 4.0% by weight, the workability decreases significantly and the solderability also decreases. It is for the purpose of The reason for setting the Si content to more than 0.1 to 1.0% by weight is that if the Si content is less than 0.1% by weight, even if 0.4% by weight or more of Ni is added, an alloy with high strength and high conductivity cannot be obtained. This is because if the content exceeds 1.0% by weight, workability and conductivity will be significantly reduced, and solderability will also be reduced. Cu is the remainder. Example After melting ingots having various compositions of the alloy of the present invention shown in Table 1 by high-frequency atmospheric melting,
It was hot rolled at ℃ to form a plate with a thickness of 4 mm. Next, this plate was subjected to normal pickling treatment, and then cold rolled to a thickness of 1.0 mm.
mm. After further annealing at 750°C for 5 minutes, it was cold rolled into a plate with a thickness of 0.4 mm. Finally, this plate was heat treated at 450°C for 1 hour and used as a sample. As for the evaluation of the sample prepared in this way, strength was shown by a tensile test, heat resistance was shown by the softening start temperature at a heating time of 30 minutes, and electrical conductivity (heat dissipation) was shown by electrical conductivity (%IACS). In addition, since thermal conductivity is in a proportional relationship with electrical conductivity, heat conductivity was evaluated by measuring electrical conductivity. Solderability is determined by vertical dipping method.
The sample was immersed in a solder bath (60% tin - 40% lead) at 230°C for 5 seconds, and the state of solder wetting was visually observed. These results are shown in Table 1 along with comparative alloys. As shown in Table 1, it is clear that the alloy according to the present invention has sufficient electrical conductivity, excellent heat resistance, strength, and solderability. This alloy is ideal as a component material, especially as a lead material for semiconductor devices. 【table】

Claims (1)

【特許請求の範囲】[Claims] 1 Ni0.4〜4.0重量%及びSi0.1を超え〜1.0重量
%を含み、残部がCu及び不可避不純物からなる
組成を有することを特徴とする半導体機器リード
材用銅合金。
1. A copper alloy for semiconductor device lead material, characterized in that it contains 0.4 to 4.0% by weight of Ni and 0.1 to 1.0% by weight of Si, with the remainder consisting of Cu and unavoidable impurities.
JP18396780A 1980-12-26 1980-12-26 Copper alloy for semiconductor device lead Granted JPS57109357A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18396780A JPS57109357A (en) 1980-12-26 1980-12-26 Copper alloy for semiconductor device lead

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18396780A JPS57109357A (en) 1980-12-26 1980-12-26 Copper alloy for semiconductor device lead

Publications (2)

Publication Number Publication Date
JPS57109357A JPS57109357A (en) 1982-07-07
JPS6213823B2 true JPS6213823B2 (en) 1987-03-28

Family

ID=16144949

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18396780A Granted JPS57109357A (en) 1980-12-26 1980-12-26 Copper alloy for semiconductor device lead

Country Status (1)

Country Link
JP (1) JPS57109357A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007100145A (en) * 2005-09-30 2007-04-19 Dowa Holdings Co Ltd Copper-alloy sheet material with improved bendability and fatigue characteristic

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR840001426B1 (en) * 1982-10-20 1984-09-26 이영세 Copper alloys and its producing methods using electric and electronic materials
JPS60221541A (en) * 1984-04-07 1985-11-06 Kobe Steel Ltd Copper alloy superior in hot workability

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5278621A (en) * 1975-12-26 1977-07-02 Tamagawa Kikai Kinzoku Kk Copper alloy for lead frames of semiconductor elements
JPS5315070A (en) * 1976-07-28 1978-02-10 Toshiba Corp Semiconductor device
JPS54100257A (en) * 1978-01-25 1979-08-07 Toshiba Corp Lead frame

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5278621A (en) * 1975-12-26 1977-07-02 Tamagawa Kikai Kinzoku Kk Copper alloy for lead frames of semiconductor elements
JPS5315070A (en) * 1976-07-28 1978-02-10 Toshiba Corp Semiconductor device
JPS54100257A (en) * 1978-01-25 1979-08-07 Toshiba Corp Lead frame

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007100145A (en) * 2005-09-30 2007-04-19 Dowa Holdings Co Ltd Copper-alloy sheet material with improved bendability and fatigue characteristic

Also Published As

Publication number Publication date
JPS57109357A (en) 1982-07-07

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