JPS6213823B2 - - Google Patents
Info
- Publication number
- JPS6213823B2 JPS6213823B2 JP55183967A JP18396780A JPS6213823B2 JP S6213823 B2 JPS6213823 B2 JP S6213823B2 JP 55183967 A JP55183967 A JP 55183967A JP 18396780 A JP18396780 A JP 18396780A JP S6213823 B2 JPS6213823 B2 JP S6213823B2
- Authority
- JP
- Japan
- Prior art keywords
- weight
- alloy
- copper
- conductivity
- solderability
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010949 copper Substances 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 6
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 description 15
- 239000000956 alloy Substances 0.000 description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Conductive Materials (AREA)
- Lead Frames For Integrated Circuits (AREA)
Description
【発明の詳細な説明】
本発明はトランジスタや集積回路（IC）など
の半導体機器のリード材に適する銅合金に関する
ものである。
従来、半導体機器のリード材としては熱膨張係
数が低く、素子およびセラミツクスとの接着およ
び封着性の良好なコバール合金、42合金などの高
ニツケル合金が好んで使われてきた。しかし、近
年、半導体回路の集積度の向上に伴い、消費電力
の高いICが多くなつてきたため、使用されるリ
ード材も放熱性の良い、すなわち熱伝導性の良好
な銅基合金が使われるようになつてきた。しかし
ながら、リード材としては熱伝導性が良い、耐熱
性が良い、ハンダ付け性・メツキ密着性が良い、
強度が高い、廉価である等の諸条件をすべて満足
した銅基合金は見当らない。従来より使用されて
いる無酸素銅、りん青銅、すず入り銅、鉄入り銅
などの銅基合金は何れも一長一短があり、必ずし
も満足し得るものではない。本発明はかかる点に
鑑み、従来の銅基合金のもつ欠点を起良し、半導
体機器のリード材として好適な諸特性を有する銅
合金を提供するものである。
本発明はNi0.4〜4.0重量％、Si0.1を超え〜1.0
重量％を含み、残部が銅および不可避不純物より
なることを特徴とする半導体機器のリード材用銅
合金である。本発明に係る合金はリード材に要求
される放熱性、耐熱性、強度、ハンダ付け性・メ
ツキ密着性等のすべてが良好なるものである。
次に本発明合金を構成する合金組成範囲の限定
理由を説明する。Ni含有量を0.4〜4.0重量％とす
る理由は、Ni含有量が0.4重量％未満ではSiを0.1
重量％を超えて添加しても高強度でかつ高導電性
を示す合金が得られず、逆にNi含有量が4.0重量
％を超えると、加工性の低下が著しくなり、ハン
ダ付け性も低下する為である。Si含有量を0.1を
超え〜1.0重量％とした理由はSi含有量が0.1重量
％以下ではNiを0.4重量％以上添加しても高強度
でかつ高導電性を示す合金が得られず、Si含有量
が1.0重量％を超えると、加工性、導電性の低下
が著しくなり、またハンダ付け性も低下する為で
ある。Cuは残部とする。
実施例
第１表に示される本発明合金に係る各種成分組
成のインゴツトを高周波大気溶解で溶製後、800
℃で熱間圧延し、厚さ４mmの板とした。次にこの
板を通常の酸洗処理した後、冷間圧延で厚さ1.0
mmとした。さらに750℃にて５分間の焼鈍を施し
た後、冷間圧延で厚さ0.4mmの板とした。最後
に、この板を450℃にて１時間熱処理し、試料と
した。このようにして調整された試料の評価とし
て、強度は引張試験、耐熱性は加熱時間30分にお
ける軟化開始温度、導電性（放熱性）は電気伝導
率（％IACS）によつて示した。なお、熱伝導度
は導電率と比例関係にあるので導電率の測定で伝
熱性を評価した。ハンダ付け性は垂直式浸漬法で
230℃のハンダ浴（すず60−鉛40）に５秒間浸漬
し、ハンダのぬれの状態を目視観察した。これら
の結果を比較合金とともに第１表に示した。
第１表に示すごとく本発明に係る合金は、十分
な導電性とすぐれた耐熱性、強度およびハンダ付
け性を兼ね具えることが明らかであり、本発明の
特許請求範囲に記載する合金は電子部品材料、特
に半導体機器リード材として最適な合金である。
【表】DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a copper alloy suitable as a lead material for semiconductor devices such as transistors and integrated circuits (ICs). Conventionally, high nickel alloys such as Kovar alloy and 42 alloy have been preferred as lead materials for semiconductor devices because of their low coefficient of thermal expansion and good adhesion and sealing properties with elements and ceramics. However, in recent years, as the degree of integration of semiconductor circuits has improved, the number of ICs with high power consumption has increased, so the lead materials used are also copper-based alloys with good heat dissipation properties, that is, good thermal conductivity. I'm getting used to it. However, as a lead material, it has good thermal conductivity, good heat resistance, and good solderability and plating adhesion.
No copper-based alloy has been found that satisfies all conditions such as high strength and low cost. Conventionally used copper-based alloys such as oxygen-free copper, phosphor bronze, tin-containing copper, and iron-containing copper all have advantages and disadvantages, and are not necessarily satisfactory. In view of the above, the present invention aims to overcome the drawbacks of conventional copper-based alloys and provide a copper alloy having various properties suitable as a lead material for semiconductor devices. The present invention has Ni0.4~4.0% by weight, Si over 0.1~1.0
% by weight, with the remainder consisting of copper and unavoidable impurities. The alloy according to the present invention has good heat dissipation, heat resistance, strength, solderability, plating adhesion, etc. all required for lead materials. Next, the reason for limiting the alloy composition range constituting the alloy of the present invention will be explained. The reason why the Ni content is set to 0.4 to 4.0% by weight is that when the Ni content is less than 0.4% by weight, the Si is reduced to 0.1% by weight.
Even if the Ni content exceeds 4.0% by weight, an alloy with high strength and high conductivity cannot be obtained.On the other hand, if the Ni content exceeds 4.0% by weight, the workability decreases significantly and the solderability also decreases. It is for the purpose of The reason for setting the Si content to more than 0.1 to 1.0% by weight is that if the Si content is less than 0.1% by weight, even if 0.4% by weight or more of Ni is added, an alloy with high strength and high conductivity cannot be obtained. This is because if the content exceeds 1.0% by weight, workability and conductivity will be significantly reduced, and solderability will also be reduced. Cu is the remainder. Example After melting ingots having various compositions of the alloy of the present invention shown in Table 1 by high-frequency atmospheric melting,
It was hot rolled at ℃ to form a plate with a thickness of 4 mm. Next, this plate was subjected to normal pickling treatment, and then cold rolled to a thickness of 1.0 mm.
mm. After further annealing at 750°C for 5 minutes, it was cold rolled into a plate with a thickness of 0.4 mm. Finally, this plate was heat treated at 450°C for 1 hour and used as a sample. As for the evaluation of the sample prepared in this way, strength was shown by a tensile test, heat resistance was shown by the softening start temperature at a heating time of 30 minutes, and electrical conductivity (heat dissipation) was shown by electrical conductivity (%IACS). In addition, since thermal conductivity is in a proportional relationship with electrical conductivity, heat conductivity was evaluated by measuring electrical conductivity. Solderability is determined by vertical dipping method.
The sample was immersed in a solder bath (60% tin - 40% lead) at 230°C for 5 seconds, and the state of solder wetting was visually observed. These results are shown in Table 1 along with comparative alloys. As shown in Table 1, it is clear that the alloy according to the present invention has sufficient electrical conductivity, excellent heat resistance, strength, and solderability. This alloy is ideal as a component material, especially as a lead material for semiconductor devices. 【table】
Claims (1)
％を含み、残部がCu及び不可避不純物からなる
組成を有することを特徴とする半導体機器リード
材用銅合金。1. A copper alloy for semiconductor device lead material, characterized in that it contains 0.4 to 4.0% by weight of Ni and 0.1 to 1.0% by weight of Si, with the remainder consisting of Cu and unavoidable impurities.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18396780A JPS57109357A (en) | 1980-12-26 | 1980-12-26 | Copper alloy for semiconductor device lead |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18396780A JPS57109357A (en) | 1980-12-26 | 1980-12-26 | Copper alloy for semiconductor device lead |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57109357A JPS57109357A (en) | 1982-07-07 |
| JPS6213823B2 true JPS6213823B2 (en) | 1987-03-28 |
Family
ID=16144949
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18396780A Granted JPS57109357A (en) | 1980-12-26 | 1980-12-26 | Copper alloy for semiconductor device lead |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57109357A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007100145A (en) * | 2005-09-30 | 2007-04-19 | Dowa Holdings Co Ltd | Copper-alloy sheet material with improved bendability and fatigue characteristic |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR840001426B1 (en) * | 1982-10-20 | 1984-09-26 | 이영세 | Copper alloys and its producing methods using electric and electronic materials |
| JPS60221541A (en) * | 1984-04-07 | 1985-11-06 | Kobe Steel Ltd | Copper alloy superior in hot workability |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5278621A (en) * | 1975-12-26 | 1977-07-02 | Tamagawa Kikai Kinzoku Kk | Copper alloy for lead frames of semiconductor elements |
| JPS5315070A (en) * | 1976-07-28 | 1978-02-10 | Toshiba Corp | Semiconductor device |
| JPS54100257A (en) * | 1978-01-25 | 1979-08-07 | Toshiba Corp | Lead frame |
-
1980
- 1980-12-26 JP JP18396780A patent/JPS57109357A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5278621A (en) * | 1975-12-26 | 1977-07-02 | Tamagawa Kikai Kinzoku Kk | Copper alloy for lead frames of semiconductor elements |
| JPS5315070A (en) * | 1976-07-28 | 1978-02-10 | Toshiba Corp | Semiconductor device |
| JPS54100257A (en) * | 1978-01-25 | 1979-08-07 | Toshiba Corp | Lead frame |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007100145A (en) * | 2005-09-30 | 2007-04-19 | Dowa Holdings Co Ltd | Copper-alloy sheet material with improved bendability and fatigue characteristic |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57109357A (en) | 1982-07-07 |
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