JPS6314056B2 - - Google Patents
Info
- Publication number
- JPS6314056B2 JPS6314056B2 JP57006061A JP606182A JPS6314056B2 JP S6314056 B2 JPS6314056 B2 JP S6314056B2 JP 57006061 A JP57006061 A JP 57006061A JP 606182 A JP606182 A JP 606182A JP S6314056 B2 JPS6314056 B2 JP S6314056B2
- Authority
- JP
- Japan
- Prior art keywords
- weight
- alloy
- copper
- strength
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910045601 alloy Inorganic materials 0.000 claims description 22
- 239000000956 alloy Substances 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 15
- 239000010949 copper Substances 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 10
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 11
- 229910052802 copper Inorganic materials 0.000 description 11
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910000906 Bronze Inorganic materials 0.000 description 2
- 229910017876 Cu—Ni—Si Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 239000010974 bronze Substances 0.000 description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Conductive Materials (AREA)
Description
【発明の詳細な説明】
本発明はトランジスタや集積回路（IC）など
の半導体機器のリード材に適する銅合金に関する
ものである。
従来、半導体機器のリード材としては熱膨張係
数が低く、素子およびセラミツクスとの接着およ
び封着性の良好なコバール合金、42合金などの高
ニツケル合金が好んで使われてきた。しかし近年
半導体回路の集積度の向上に伴い消費電力の高い
ICが多くなつたきたことと、封止材料として樹
脂が多く使用され、かつ素子とリードフレームの
接着もペーストが多く用いられたことにより、使
用されるリード材も放熱性のよい銅基合金が使わ
れるようになつてきた。しかし、リード材として
は熱伝導性が良い。耐熱性が良い、ハンダ付け
性・メツキ密着性が良い。強度が高い、廉価であ
る等の広範な諸条件を全て満足する必要がある。
従来より使用されている無酸素銅、すず入り銅、
りん青銅、鉄入り銅などの銅基合金は何れも一長
一短があり、必ずしも満足し得るものではない。
たとえば無酸素銅では強度、耐熱性が低く、すず
入り銅、鉄入り銅では強度的に満足できず、りん
青銅では熱伝導性、耐熱性が低いという欠点を有
している。かかる点に鑑み、従来の銅基合金のも
つ欠点を改良し、半導体機器のリード材として好
適な諸特性を有する銅合金としてCu−Ni−Si合
金が提供されているが、強度的に完全に満足でき
るものではないので、本発明はCu−Ni−Si合金
をさらに改良し、半導体機器のリード材としてよ
り優れた諸特性を有する銅合金を提供しようとす
るものである。
本発明は
(1) Ni；1.0超〜4.0重量％、Si；0.3超〜1.0重量
％を含み残部が銅および不可避的な不純物から
なる合金に副成分として
As；0.001〜0.1重量％、
Sb；0.001〜0.1重量％、
Fe；0.01〜1.0重量％、
Co；0.01〜1.0重量％、
Cr；0.01〜1.0重量％、
Al；0.01〜1.0重量％、
Ti；0.01〜1.0重量％、
Zr；0.01〜1.0重量％、
Mg；0.01〜1.0重量％、
Zn；0.01〜1.0重量％、
からなる群より選択された１種以上を総量で
0.001〜2.0重量％添加した組成を有することを
特徴とする半導体機器のリード材用銅合金。
(2) Ni；1.0超〜4.0重量％、Si；0.3超〜1.0重量
％を含み、酸素含有量が10ppm以下で残部が銅
および不可避的な不純物からなる合金に副成分
として
As；0.001〜0.1重量％、
Sb；0.001〜0.1重量％、
Fe；0.01〜1.0重量％、
Co；0.01〜1.0重量％、
Cr；0.01〜1.0重量％、
Al；0.01〜1.0重量％、
Ti；0.01〜1.0重量％、
Zr；0.01〜1.0重量％、
Mg；0.01〜1.0重量％、
Zn；0.01〜1.0重量％、
からなる群より選択された１種以上を総量で
0.001〜2.0重量％添加した組成を有することを
特徴とする半導体機器のリード材用銅合金であ
る。本発明に係る合金はリード材に要求される
放熱性、耐熱性、強度、ハンダ付け性、メツキ
密着性等のすべてが良好なるものである。
次に本発明合金を構成する合金成分の限定理由
を説明する。Niは所定量のSiと共に添加するこ
とにより、本発明合金の強度を高め、しかも高導
電性を維持する効果があるが、Ni含有量が1.0重
量％以下では、リードフレーム材の中でも、特に
強度を必要とするリードフレーム材においては強
度が不十分である。またNi含有量が4.0重量％を
超えると加工性およびハンダ付け性が低下して好
ましくない。Siの含有量を0.3重量％を超え、1.0
重量％以下とする理由は、Siの含有量が0.3重量
％以下ではNiを共添してもリードフレーム材の
中で特に高強度を必要とするリードフレーム材に
おいては強度が不十分であり、Si含有量が1.0重
量％を超えると加工性が急速に悪化し、またハン
ダ付け性も低下するので、上記1.0重量％を上限
とする範囲におさえる必要がある。
さらに副成分としてAs、Sb、Fe、Co、Or、
Al、Ti、Zr、Mg、Znからなる群より選択され
た１種以上の総量が0.001重量％未満では、高強
度でかつ耐食性のある合金が得られず、また2.0
重量％を超えると導電性の低下およびハンダ付け
性の低下が著しくなる為である。また、酸素含有
量を10ppm以下とした理由は、酸素含有量を
10ppm以下とすることにより、メツキ密着性が著
しく改善される為である。
以下に本発明合金を実施例で説明する。
実施例
第１表に示される本発明合金に係る各種成分組
成のインゴツトを高周波溶解炉で大気、不活性又
は還元性雰囲気中で溶解鋳造した。次にこれを
800℃で熱間圧延し、厚さ４mmの板とした。次に
この板を通常の酸洗処理した後、冷間圧延で厚さ
1.0mmとした。さらに750℃にて５分間の焼鈍を施
した後、冷間圧延で厚さ0.4mmの板とした。最後
にこの板を450℃にて１時間熱処理し試料とした。
このようにして調整された試料の評価として、強
度は引張試験、耐熱性は加熱時間30分における軟
化開始温度、導電性（放熱性）は電気伝導率（％
IACS）によつて示した。ハンダ付け性は垂直式
浸漬法で230℃のハンダ浴（すず60−鉛40）に５
秒間浸漬し、ハンダのぬれの状態を目視観察し
た。メツキ密着性は試料に厚さ3μのAgメツキを
施し、450℃にて５分間加熱して表面に発生する
フクレの数を目視観察した。これらの結果を比較
合金とともに第１表に示した。
第１表に示すごとく本発明に係る合金は十分な
導電性とすぐれた耐熱性、強度、ハンダ付け性お
よび耐食性を兼ね具えることが明らかであり、本
発明合金は半導体機器のリード材として最適な合
金である。
【表】DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a copper alloy suitable as a lead material for semiconductor devices such as transistors and integrated circuits (ICs). Conventionally, high nickel alloys such as Kovar alloy and 42 alloy have been preferred as lead materials for semiconductor devices because of their low coefficient of thermal expansion and good adhesion and sealing properties with elements and ceramics. However, in recent years, as the degree of integration of semiconductor circuits has improved, power consumption has increased.
With the increase in the number of ICs, the use of resin as a sealing material, and the use of paste to bond elements and lead frames, the lead materials used are copper-based alloys with good heat dissipation. It has come to be used. However, it has good thermal conductivity as a lead material. Good heat resistance, good solderability and plating adhesion. It is necessary to satisfy a wide range of conditions such as high strength and low cost.
Conventionally used oxygen-free copper, tin-containing copper,
Copper-based alloys such as phosphor bronze and iron-containing copper all have advantages and disadvantages, and are not always satisfactory.
For example, oxygen-free copper has low strength and heat resistance, tin-containing copper and iron-containing copper have unsatisfactory strength, and phosphor bronze has low thermal conductivity and heat resistance. In view of this, Cu-Ni-Si alloys have been offered as copper alloys that have improved the drawbacks of conventional copper-based alloys and have various properties suitable as lead materials for semiconductor devices, but they are not perfect in terms of strength. Therefore, the present invention aims to further improve the Cu-Ni-Si alloy and provide a copper alloy having better properties as a lead material for semiconductor devices. The present invention provides (1) an alloy containing Ni; more than 1.0 to 4.0% by weight, Si; more than 0.3 to 1.0% by weight, and the remainder consisting of copper and unavoidable impurities; As; 0.001 to 0.1% by weight; Sb; 0.001-0.1% by weight, Fe; 0.01-1.0% by weight, Co; 0.01-1.0% by weight, Cr; 0.01-1.0% by weight, Al; 0.01-1.0% by weight, Ti; 0.01-1.0% by weight, Zr; 0.01- 1.0% by weight, Mg; 0.01 to 1.0% by weight, Zn; 0.01 to 1.0% by weight, in total amount of one or more selected from the group consisting of
A copper alloy for lead material of semiconductor devices, characterized by having a composition containing 0.001 to 2.0% by weight. (2) As a subcomponent in an alloy containing Ni: more than 1.0 to 4.0% by weight, Si: more than 0.3 to 1.0% by weight, oxygen content of 10 ppm or less, and the balance consisting of copper and unavoidable impurities, As as a subcomponent. Weight%, Sb; 0.001-0.1% by weight, Fe; 0.01-1.0% by weight, Co; 0.01-1.0% by weight, Cr; 0.01-1.0% by weight, Al; 0.01-1.0% by weight, Ti; 0.01-1.0% by weight. , Zr; 0.01 to 1.0% by weight, Mg; 0.01 to 1.0% by weight, Zn; 0.01 to 1.0% by weight, in total amount of one or more selected from the group consisting of
This is a copper alloy for lead material of semiconductor devices, characterized by having a composition containing 0.001 to 2.0% by weight. The alloy according to the present invention has good heat dissipation, heat resistance, strength, solderability, plating adhesion, etc. required for lead materials. Next, the reason for limiting the alloy components constituting the alloy of the present invention will be explained. By adding Ni together with a predetermined amount of Si, it is effective to increase the strength of the alloy of the present invention and maintain high conductivity. Lead frame materials that require this have insufficient strength. Moreover, if the Ni content exceeds 4.0% by weight, processability and solderability will deteriorate, which is not preferable. Si content exceeds 0.3% by weight and 1.0
The reason why the Si content is 0.3% by weight or less is that even if Ni is co-added, the strength will be insufficient for lead frame materials that require particularly high strength among lead frame materials. If the Si content exceeds 1.0% by weight, processability will rapidly deteriorate and solderability will also decrease, so it is necessary to keep the Si content within the above range of 1.0% by weight as the upper limit. Furthermore, As, Sb, Fe, Co, Or,
If the total amount of one or more selected from the group consisting of Al, Ti, Zr, Mg, and Zn is less than 0.001% by weight, an alloy with high strength and corrosion resistance cannot be obtained;
This is because if the content exceeds % by weight, the conductivity and solderability will be significantly reduced. In addition, the reason why the oxygen content was set to 10 ppm or less is that the oxygen content was
This is because plating adhesion is significantly improved by setting the content to 10 ppm or less. The alloy of the present invention will be explained below using examples. Examples Ingots having various compositions of the alloys of the present invention shown in Table 1 were melted and cast in a high-frequency melting furnace in air, an inert atmosphere, or a reducing atmosphere. then this
It was hot rolled at 800°C to form a plate with a thickness of 4 mm. Next, this plate is subjected to ordinary pickling treatment, and then cold rolled to a thickness of
It was set to 1.0mm. After further annealing at 750°C for 5 minutes, it was cold rolled into a plate with a thickness of 0.4 mm. Finally, this plate was heat treated at 450°C for 1 hour and used as a sample.
The samples prepared in this way were evaluated by tensile test for strength, softening start temperature at 30 minutes heating time for heat resistance, and electrical conductivity (%) for conductivity (heat dissipation).
IACS). Solderability was tested using the vertical dipping method in a soldering bath (tin 60 - lead 40) at 230℃.
The solder was immersed for a second and the wetting state of the solder was visually observed. Plating adhesion was determined by applying Ag plating to a thickness of 3 μm to a sample, heating it at 450° C. for 5 minutes, and visually observing the number of blisters generated on the surface. These results are shown in Table 1 along with comparative alloys. As shown in Table 1, it is clear that the alloy according to the present invention has sufficient electrical conductivity and excellent heat resistance, strength, solderability, and corrosion resistance, and the alloy according to the present invention is ideal as a lead material for semiconductor devices. It is an alloy. 【table】
Claims (1)
0.001〜2.0重量％添加した組成を有することを特
徴とする半導体機器のリード材用銅合金。 ２ Ni；1.0超〜4.0重量％、 Si；0.3超〜1.0重量％、 O2；10ppm以下 Cu及び不可避不純物；残り からなる合金に副成分として As；0.001〜0.1重量％、 Sb；0.001〜0.1重量％、 Fe；0.01〜1.0重量％、 Co；0.01〜1.0重量％、 Cr；0.01〜1.0重量％、 Al；0.01〜1.0重量％、 Ti；0.01〜1.0重量％、 Zr；0.01〜1.0重量％、 Mg；0.01〜1.0重量％、 Zn；0.01〜1.0重量％、 からなる群より選択された１種以上を総量で
0.001〜2.0重量％添加した組成を有することを特
徴とする半導体機器のリード材用銅合金。[Claims] 1 Ni; more than 1.0 to 4.0% by weight; Si; more than 0.3 to 1.0% by weight; Cu and unavoidable impurities; As a subcomponent in an alloy consisting of the remainder; As; 0.001 to 0.1% by weight; Sb; 0.001 to 0.1% by weight, Fe; 0.01-1.0% by weight, Co; 0.01-1.0% by weight, Cr; 0.01-1.0% by weight, Al; 0.01-1.0% by weight, Ti; 0.01-1.0% by weight, Zr; 0.01-1.0% by weight %, Mg: 0.01-1.0% by weight, Zn: 0.01-1.0% by weight, in total amount of one or more selected from the group consisting of
A copper alloy for lead material of semiconductor devices, characterized by having a composition containing 0.001 to 2.0% by weight. 2 Ni: more than 1.0 to 4.0% by weight, Si: more than 0.3 to 1.0% by weight, O 2 : 10ppm or less Cu and unavoidable impurities; as a subcomponent in the alloy consisting of the rest As: 0.001 to 0.1% by weight, Sb: 0.001 to 0.1 Weight%, Fe; 0.01-1.0% by weight, Co; 0.01-1.0% by weight, Cr; 0.01-1.0% by weight, Al; 0.01-1.0% by weight, Ti; 0.01-1.0% by weight, Zr; 0.01-1.0% by weight. , Mg; 0.01 to 1.0% by weight, Zn; 0.01 to 1.0% by weight, in total amount of one or more selected from the group consisting of
A copper alloy for lead material of semiconductor devices, characterized by having a composition containing 0.001 to 2.0% by weight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP606182A JPS58124254A (en) | 1982-01-20 | 1982-01-20 | Copper alloy for lead material of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP606182A JPS58124254A (en) | 1982-01-20 | 1982-01-20 | Copper alloy for lead material of semiconductor device |
Related Child Applications (5)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23370183A Division JPS59145748A (en) | 1983-12-13 | 1983-12-13 | Copper alloy for lead material of semiconductor apparatus |
| JP23369883A Division JPS59145745A (en) | 1983-12-13 | 1983-12-13 | Copper alloy for lead material of semiconductor apparatus |
| JP23370283A Division JPS59145749A (en) | 1983-12-13 | 1983-12-13 | Copper alloy for lead material of semiconductor apparatus |
| JP23369983A Division JPS59145746A (en) | 1983-12-13 | 1983-12-13 | Copper alloy for lead material of semiconductor apparatus |
| JP23370083A Division JPS59145747A (en) | 1983-12-13 | 1983-12-13 | Copper alloy for lead material of semiconductor apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58124254A JPS58124254A (en) | 1983-07-23 |
| JPS6314056B2 true JPS6314056B2 (en) | 1988-03-29 |
Family
ID=11628069
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP606182A Granted JPS58124254A (en) | 1982-01-20 | 1982-01-20 | Copper alloy for lead material of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58124254A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007100145A (en) * | 2005-09-30 | 2007-04-19 | Dowa Holdings Co Ltd | Copper-alloy sheet material with improved bendability and fatigue characteristic |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5949293B2 (en) * | 1982-06-05 | 1984-12-01 | 株式会社神戸製鋼所 | Copper alloy for electrical and electronic parts and its manufacturing method |
| JPS59136439A (en) * | 1983-01-26 | 1984-08-06 | Sanpo Shindo Kogyo Kk | Copper base alloy |
| JPS6043448A (en) * | 1983-08-16 | 1985-03-08 | Kobe Steel Ltd | Copper alloy for terminal or connector and its manufacture |
| JPS60218440A (en) * | 1984-04-13 | 1985-11-01 | Furukawa Electric Co Ltd:The | Copper alloy for lead frame |
| JPS60218442A (en) * | 1984-04-13 | 1985-11-01 | Furukawa Electric Co Ltd:The | Copper alloy for lead frame |
| JPS61177348A (en) * | 1985-02-01 | 1986-08-09 | Kobe Steel Ltd | Lead material for ceramic packaged ic |
| US4650123A (en) * | 1986-03-25 | 1987-03-17 | Toyota Jidosha Kabushiki Kaisha | Rotary type electrostatic spray painting device |
| US4700896A (en) * | 1986-04-11 | 1987-10-20 | Toyota Jidosha Kabushiki Kaisha | Rotary type electrostatic spray painting device |
| KR940010455B1 (en) * | 1992-09-24 | 1994-10-22 | 김영길 | Copper alloy and making method thereof |
| KR0157257B1 (en) * | 1995-12-08 | 1998-11-16 | 정훈보 | Method for manufacturing cu alloy and the same product |
| JP4542008B2 (en) * | 2005-06-07 | 2010-09-08 | 株式会社神戸製鋼所 | Display device |
| JP5121299B2 (en) * | 2007-05-09 | 2013-01-16 | アルティアム サービシズ リミテッド エルエルシー | Liquid crystal display |
| US7782413B2 (en) | 2007-05-09 | 2010-08-24 | Tohoku University | Liquid crystal display device and manufacturing method therefor |
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|---|---|---|---|---|
| JPS5314612A (en) * | 1976-07-28 | 1978-02-09 | Toshiba Corp | Lead wire |
| US4191601A (en) * | 1979-02-12 | 1980-03-04 | Ampco-Pittsburgh Corporation | Copper-nickel-silicon-chromium alloy having improved electrical conductivity |
| JPS55104449A (en) * | 1979-02-02 | 1980-08-09 | Hitachi Ltd | High-strength high-electrically-conductive copper alloy with superior weldability |
| JPS55158246A (en) * | 1979-04-30 | 1980-12-09 | Delta Enfield Metals | Precipitation hardenable copper alloy |
| JPS56142840A (en) * | 1980-04-04 | 1981-11-07 | Hitachi Ltd | Copper alloy having minute crystal grain |
| JPS572851A (en) * | 1980-06-06 | 1982-01-08 | Nippon Mining Co Ltd | Copper alloy for lead material of semiconductor device |
-
1982
- 1982-01-20 JP JP606182A patent/JPS58124254A/en active Granted
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5314612A (en) * | 1976-07-28 | 1978-02-09 | Toshiba Corp | Lead wire |
| JPS55104449A (en) * | 1979-02-02 | 1980-08-09 | Hitachi Ltd | High-strength high-electrically-conductive copper alloy with superior weldability |
| US4191601A (en) * | 1979-02-12 | 1980-03-04 | Ampco-Pittsburgh Corporation | Copper-nickel-silicon-chromium alloy having improved electrical conductivity |
| JPS55158246A (en) * | 1979-04-30 | 1980-12-09 | Delta Enfield Metals | Precipitation hardenable copper alloy |
| JPS56142840A (en) * | 1980-04-04 | 1981-11-07 | Hitachi Ltd | Copper alloy having minute crystal grain |
| JPS572851A (en) * | 1980-06-06 | 1982-01-08 | Nippon Mining Co Ltd | Copper alloy for lead material of semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007100145A (en) * | 2005-09-30 | 2007-04-19 | Dowa Holdings Co Ltd | Copper-alloy sheet material with improved bendability and fatigue characteristic |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58124254A (en) | 1983-07-23 |
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