JPH02118037A - High tensile and high conductivity copper alloy having excellent adhesion of oxidized film - Google Patents
High tensile and high conductivity copper alloy having excellent adhesion of oxidized filmInfo
- Publication number
- JPH02118037A JPH02118037A JP27083688A JP27083688A JPH02118037A JP H02118037 A JPH02118037 A JP H02118037A JP 27083688 A JP27083688 A JP 27083688A JP 27083688 A JP27083688 A JP 27083688A JP H02118037 A JPH02118037 A JP H02118037A
- Authority
- JP
- Japan
- Prior art keywords
- weight
- less
- copper alloy
- oxide film
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910000881 Cu alloy Inorganic materials 0.000 title claims abstract description 14
- 239000010949 copper Substances 0.000 claims abstract description 11
- 230000003746 surface roughness Effects 0.000 claims abstract description 7
- 229910052718 tin Inorganic materials 0.000 claims abstract description 6
- 239000012535 impurity Substances 0.000 claims abstract description 5
- 229910052745 lead Inorganic materials 0.000 claims abstract description 5
- 229910052793 cadmium Inorganic materials 0.000 claims abstract description 4
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 4
- 229910052738 indium Inorganic materials 0.000 claims abstract description 4
- 229910052742 iron Inorganic materials 0.000 claims abstract description 4
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 4
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 4
- 229910052709 silver Inorganic materials 0.000 claims abstract description 4
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 4
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 4
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 4
- 229910052796 boron Inorganic materials 0.000 claims abstract description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 claims abstract 2
- 229910052790 beryllium Inorganic materials 0.000 claims abstract 2
- 229910045601 alloy Inorganic materials 0.000 abstract description 16
- 239000000956 alloy Substances 0.000 abstract description 16
- 239000000463 material Substances 0.000 abstract description 16
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 229910052802 copper Inorganic materials 0.000 abstract description 7
- 229910052748 manganese Inorganic materials 0.000 abstract description 2
- 239000000523 sample Substances 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 229910001096 P alloy Inorganic materials 0.000 description 4
- 238000005452 bending Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 229910000906 Bronze Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000010974 bronze Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229910000833 kovar Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- MOFOBJHOKRNACT-UHFFFAOYSA-N nickel silver Chemical compound [Ni].[Ag] MOFOBJHOKRNACT-UHFFFAOYSA-N 0.000 description 1
- 239000010956 nickel silver Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000004881 precipitation hardening Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Landscapes
- Conductive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
Ｃ産業上の利用分野〕
本発明はトランジスタや集積回路（ｒｃ）などの半導体
機器のリード材、コネクター、端子、リレー。[Detailed Description of the Invention] C. Industrial Application Field] The present invention relates to lead materials, connectors, terminals, and relays for semiconductor devices such as transistors and integrated circuits (RC).
スイッチ等に用いられる、特に酸化膜密着性に優れた高
力高導電性銅合金に関するものである。This invention relates to a high-strength, high-conductivity copper alloy that is used in switches and the like and has particularly excellent oxide film adhesion.
［従来の技術〕
従来、半導体機器のリード材としては、熱膨張係数が低
く、素子及びセラミックスの接着及び封着性の良好なコ
バール（Ｆｅ−２９Ｎｉ−１６Ｃｏ） 、 ４２合金（
Ｆｅ−４２Ｎｉ）などの高ニッケル合金が好んで使われ
てきた。しかし、近年、半導体回路の集積度の向上に伴
い消費電力の高いＩＣが多くなってきたことと、封止材
料として樹脂が多く使用され、かつ素子とリードフレー
１１の接着も改良が加えられたことにより、使用される
リード材も放熱性のよい銅基合金が使われるようになっ
てきた。[Prior Art] Conventionally, lead materials for semiconductor devices include Kovar (Fe-29Ni-16Co) and 42 alloy (Fe-29Ni-16Co), which have a low coefficient of thermal expansion and have good adhesion and sealing properties between elements and ceramics.
High nickel alloys such as Fe-42Ni) have been preferred. However, in recent years, as the degree of integration of semiconductor circuits has improved, the number of ICs with high power consumption has increased, resins have been increasingly used as sealing materials, and improvements have been made to the adhesion between elements and lead frames 11. As a result, copper-based alloys with good heat dissipation properties have come to be used as lead materials.
又、従来、電気機器用ばね、計ａｔ＋１器用ばね、スイ
ッチ、コネクター等に用いられるばね用材料としては、
安価な黄銅、優れたばね特性及び耐食性を有する洋白、
あるいは優れたばね特性を有するりん青銅が使用されて
いた。In addition, conventional spring materials used for electrical equipment springs, AT+1 springs, switches, connectors, etc.
Cheap brass, nickel silver with excellent spring properties and corrosion resistance,
Alternatively, phosphor bronze, which has excellent spring properties, was used.
一方、Ｃｕ −Ｍｇ −Ｐ系銅合金もまた、強度、ばね
性、導電性、耐熱性、半田付は性、プレス成形性、半田
の耐熱剥離性、めっき密着性等に優れた材料として半導
体機器のリード材、端子、コネクター。On the other hand, Cu-Mg-P copper alloys are also used as materials for semiconductor devices, with excellent strength, spring properties, conductivity, heat resistance, solderability, press formability, heat-resistant peeling properties of solder, and plating adhesion. lead materials, terminals, and connectors.
リレー等に用いられるようになってきている。It has come to be used in relays, etc.
と述の半導体機器特にリード材に対する各種の要求特性
に対し、従来より使用されている無酸素銅、錫入り銅、
りん青銅、コバール、４２合金はいずれも一長一短があ
り、これらの特性をすべて満足するものではない。一方
、Ｃｕ −Ｍｇ −Ｐ系合金はＥ記の要求特性をかなり
満足するため、Ｃｕ−Ｍｇ−Ｐ系合金やそれに若干の添
加元素を加えた改良合金が開発されてきた。しかし、近
年半導体に対する信頼度の要求がより厳しくなるととも
に、小型化に対応した面付実装タイプが多くなってきた
ため、従来問題とされていなかった酸化膜密着性が非常
に重要な特性項目となってきた。Oxygen-free copper, tin-containing copper,
Phosphor bronze, Kovar, and 42 alloy all have advantages and disadvantages, and do not satisfy all of these characteristics. On the other hand, since the Cu-Mg-P alloy satisfies the required properties listed in E, Cu-Mg-P alloys and improved alloys made by adding some additive elements have been developed. However, in recent years, reliability requirements for semiconductors have become more stringent, and surface mounting types have become more popular in response to miniaturization, so oxide film adhesion, which was not considered an issue in the past, has become an extremely important characteristic item. It's here.
すなわち、リードフレームはパンケージングの過程で熱
が加わるため、酸化膜が必ず生成される。That is, since heat is applied to the lead frame during the pancaging process, an oxide film is inevitably generated.
樹脂等で封止された場合、樹脂と酸化膜、酸化膜゛と母
材との密着強度を比べると、酸化膜と母材の密着強度が
一般に低い。この場合、酸化膜と母材との間に剥離が生
じることがあり、そこから水分等が入り、ＩＣの信頼性
を著しく低下させてしまう。従って、酸化膜密着性はリ
ードフレーム材等に用いられる高力高導電性銅合金とし
て最も重要な特性の一つである。When sealed with a resin or the like, when comparing the adhesion strength between the resin and the oxide film, and between the oxide film and the base material, the adhesion strength between the oxide film and the base material is generally low. In this case, peeling may occur between the oxide film and the base material, allowing moisture and the like to enter therefrom, significantly reducing the reliability of the IC. Therefore, oxide film adhesion is one of the most important properties for a high-strength, high-conductivity copper alloy used for lead frame materials and the like.
このような酸化膜密着性の厳しい要求に対し、現状のＣ
ｕ −Ｍｇ −Ｐ系合金では満足することができず、酸
化膜密着性を改善した高力高導電性銅合金の現出が待た
れていた。In response to such strict requirements for oxide film adhesion, the current C
Since the u-Mg-P alloys were not satisfactory, a high-strength, high-conductivity copper alloy with improved oxide film adhesion was awaited.
本発明はかかる点に鑑みなされたもので、特にＣｕ −
Ｍｇ −Ｐ系合金を改良し、半導体機器のリード材とし
て好適な諸特性を有する銅合金を提供しようとするもの
である。The present invention was made in view of this point, and in particular Cu-
The aim is to improve the Mg--P alloy and provide a copper alloy that has various properties suitable as a lead material for semiconductor devices.
すなわち、本発明は、 Ｍｇ ０．１重量％以上、２゜
Ｏ重量′糸以下、 Ｐ ０．００１重量％以上、０．０
４重量％以下を含み、残部Ｃｕおよび不可避的不純物か
らなり、表面粗さが、中心線平均粗さ（Ｉｌａ）で０．
２０μｍ以下、最大高さ（Ｒｍａｘ）で１．５μｍ以下
であることを特徴とする酸化膜密着性に優れた高カニ′
１°ｆＪ導電性銅合金及びＭ、、０．１重量％以上、２
．０市は％以ド、ｌ） ０．００１重量％以上、０．０
４ｆｆｌ量％以下を含み、さらに、副成分として、Ｂｅ
−Ａ１． Ｓｉ、 Ｔｉ、 Ｃｒ、阿ｎ、 Ｆｅ、 Ｃ
ｏ、Ｎｉ、 Ｚｎ、 Ｚｒ、 Ｍｏ、 Ａｇ、Ｃｄ、
Ｐｂ、Ｉｎ、Ｓｎ、１３からなる群より選択された１種
又は２種以りを総量で０．００１重量％以上、３．０重
量％以下を含み、残部Ｃｕおよび不可避的不純物からな
り１表面粗さが、中゛ 心線平均粗さ（Ｒａ）で０．２
０μｍ以下、最大高さ（Ｒｍａｘ）で１．５μｍ以下で
あることを特徴とする酸化膜密着性に優れた高力高導電
性銅合金を提供しようとするものである。That is, the present invention provides the following conditions: Mg 0.1% by weight or more, 2°O weight % or less, P 0.001% by weight or more, 0.0
4% by weight or less, with the remainder consisting of Cu and unavoidable impurities, and the surface roughness is 0.5% in terms of centerline average roughness (Ila).
20μm or less, maximum height (Rmax) is 1.5μm or less, and has excellent oxide film adhesion.
1°fJ conductive copper alloy and M, 0.1% by weight or more, 2
．． 0 city is less than %, l) 0.001% by weight or more, 0.0
Contains 4ffl amount% or less, and further contains Be as a subcomponent.
-A1. Si, Ti, Cr, An, Fe, C
o, Ni, Zn, Zr, Mo, Ag, Cd,
One surface contains one or more selected from the group consisting of Pb, In, Sn, and 13 in a total amount of 0.001% by weight or more and 3.0% by weight or less, the balance being Cu and unavoidable impurities. Roughness is medium. Core average roughness (Ra) is 0.2
The present invention aims to provide a high-strength, high-conductivity copper alloy with excellent oxide film adhesion, which is characterized by a maximum height (Rmax) of 0 μm or less and a maximum height (Rmax) of 1.5 μm or less.
以下、に１本発明合金を構成する合金成分の限定理由を
説明する。The reasons for limiting the alloy components constituting the alloy of the present invention will be explained below.
Ｍｇ ０．１重量％以上、２．０重量％以下とするのは
、時効処理の際ＭｇはＰと微細なＭｇ−Ｐ化合物による
析出硬化が期待でき、さらに、それに伴い耐熱性、めっ
き密着性、プレス成形性が向上するためであり、Ｍｇの
含有量が０．１重量％未満ではそのような効果が期待で
きず、又２．０重量％を超えると未析出状態で固溶した
Ｍｇにより導電率が低下するためである。The reason for setting Mg to 0.1% by weight or more and 2.0% by weight or less is that Mg can be expected to undergo precipitation hardening due to P and fine Mg-P compounds during aging treatment, and this will also improve heat resistance and plating adhesion. This is because the press formability is improved, and if the Mg content is less than 0.1% by weight, such an effect cannot be expected, and if it exceeds 2.0% by weight, Mg dissolved in a solid solution in an unprecipitated state This is because the conductivity decreases.
Ｐ ０．００１重量％以上、０．０４重量％以下とする
のは、Ｐの含有量が０．００１重量％未満ではＭｇとの
化合物の析出は不十分で、強度の向上は期待できず、０
．０４重量％を超えると強度は向上するものの、酸化膜
密着性が著しく劣化するためである。The P content is set at 0.001% by weight or more and 0.04% by weight or less because if the P content is less than 0.001% by weight, precipitation of compounds with Mg is insufficient and no improvement in strength can be expected. 0
．． This is because if it exceeds 0.4% by weight, the strength will improve, but the oxide film adhesion will deteriorate significantly.
さらに副成分として、 Ｂｅ、Ａ１． Ｓｉ、 Ｔｉ、
Ｃｒ、Ｍｎ、Ｆｅ、Ｃｏ、Ｎｉ、 Ｚｎ、Ｚｒ、 Ｍ
ｏ、Ａｇ、Ｃｄ、 Ｐｂ、Ｉｎ、Ｓｎ、Ｂから成る群よ
り１種又は２種以上の元素を添加するのは、これらの添
加により導電率を大きく低下させずに強度を向上させる
ことができるためであり、添加量を総量で０．００１重
量％以上、３．０重量％以下とするのは、０．００１重
量％未満ではそのような効果は期待できず、３．０重量
％を超えると導電性が著しく低下するためである。Further, as subcomponents, Be, A1. Si, Ti,
Cr, Mn, Fe, Co, Ni, Zn, Zr, M
Adding one or more elements from the group consisting of O, Ag, Cd, Pb, In, Sn, and B is because these additions can improve the strength without significantly reducing the electrical conductivity. Therefore, the reason why the total amount added is 0.001% by weight or more and 3.0% by weight or less is that such an effect cannot be expected if it is less than 0.001% by weight, and if it exceeds 3.0% by weight. This is because the conductivity decreases significantly.
表面粗さを中心線平均粗さ（Ｒａ）で０．２０μｍ以下
、最大高さ（ＲＩＩａｘ）で１．５μｍ以下とするのは
、表面を平滑にすることにより酸化膜密着性を向上させ
るためである。The reason why the surface roughness is set to 0.20 μm or less in center line average roughness (Ra) and 1.5 μm or less in maximum height (RIIax) is to improve oxide film adhesion by smoothing the surface. be.
次に本発明を実施例により具体的に説明する。Next, the present invention will be specifically explained using examples.
第１表に示す本発明合金に係る各種成分組成のインゴッ
トを、電気銅あるいは！！酸素銅を原料として高周波溶
解炉で、大気、又は不活性あるいは還元性雰囲気中で溶
解・鋳造を行った。次に、これらインゴットの面削を行
った後、８５０℃−で１時間加熱し、熱間圧延で５ｍの
板とした。この厚さ５１ｍの板を９５０℃で１時間の溶
体化処理を行った後、冷間圧延で厚さ０．２５ｎｎの板
とし、３５０〜６００℃の温度範囲で時効処理を適宜行
い供試材とした。Electrolytic copper or! ! Oxygenated copper was used as a raw material and melted and cast in a high-frequency melting furnace in air or an inert or reducing atmosphere. Next, these ingots were subjected to face cutting, heated at 850° C. for 1 hour, and hot rolled into a 5 m plate. This 51 m thick plate was solution-treated at 950°C for 1 hour, then cold rolled into a 0.25 nn thick plate, and appropriately aged in the temperature range of 350 to 600°C to provide the sample material. And so.
リード材及びばね材としての評価項目として強度、引張
強さ、伸び−１ばね限界値により評価した。The evaluation items for lead material and spring material were strength, tensile strength, and elongation-1 spring limit value.
電気伝導性（放熱性）は導ｆｌｓＪ！、（％ＩＡＣ３）
によって示した。繰り返し曲げ性は曲げＲｏ、２５ｍｍ
の折り曲げ治具を用い、９０°往復曲げを行い破断まで
の回数をｉｌｌ’ｌ定した。Electrical conductivity (heat dissipation) is conductivity! , (%IAC3)
It was shown by Repeated bendability is bending Ro, 25mm
Using a bending jig, 90° reciprocating bending was performed to determine the number of times until breakage.
半！’ＴＩ付は性は、垂直式浸漬法によって、２３０±
５℃の半Ｅｌｌ浴（Ｓｎ６０％、Ｐｂ４０％）に５秒間
浸漬して、半田のぬれの状態を目視１１１１ｒ％するこ
とにより評価した。半田の耐熱剥離性は、上記の方法で
半田付けした試料を大気中１５０℃、５００時間加熱後
、 ０．２５ｍＲの９０°曲げを行い剥離の有無を評価
した。half! 'TI attached is 230± by vertical immersion method.
The solder wetting condition was visually evaluated by immersing it in a half-El bath (60% Sn, 40% Pb) for 5 seconds at 5° C. and checking the wettability of the solder at 1111r%. The heat peeling property of the solder was determined by heating a sample soldered by the above method at 150° C. for 500 hours in the air, and then bending it at 90° at 0.25 mR to evaluate the presence or absence of peeling.
メツキ密着性は試料に厚さ３μのＡｇメツキを施し、４
５０℃にて５分間加熱し、表面に発生するフクレの有無
を目視観察することにより評価した。The plating adhesion was determined by applying Ag plating with a thickness of 3μ to the sample.
The sample was heated at 50° C. for 5 minutes, and the presence or absence of blisters generated on the surface was visually observed to evaluate.
プレス成形性は打ち抜き加工後のプレス破面を観亭する
ことにより評価した。Press formability was evaluated by observing the press fracture surface after punching.
耐熱性は加熱時間５分における軟化温度により評価した
。Heat resistance was evaluated based on the softening temperature at a heating time of 5 minutes.
酸化膜密着性は試料を２００〜５００℃の温度にて３分
間大気中で加熱して表面に酸化膜を生成させ、試料表面
に粘着テープをはり、テープを試料から一気にはがして
酸化膜の剥離の有無により評価を行った。酸化膜が剥離
し始める温度を第１表に示す。Oxide film adhesion is determined by heating the sample in the air at a temperature of 200 to 500°C for 3 minutes to form an oxide film on the surface, then applying adhesive tape to the sample surface and peeling off the tape from the sample at once to remove the oxide film. Evaluation was made based on the presence or absence of Table 1 shows the temperatures at which the oxide film begins to peel off.
第１表から明らかなように、本発明合金は、比較合金Ｎ
ｏ１２．１５．１６のりん青銅系合金と比べてみると酸
化膜密着性が優れていることがわかる。本発明合金Ｎｏ
３．４は比較合金Ｎｏ１７．１８と同一組成であるが、
表面粗さ、Ｒａ、 Ｒｍ’ａｘが小さいため酸化膜密着
性が優れている。また、比較合金Ｎ０１３は強度が低く
、比較合金Ｎ０１４は半田の耐熱剥離性が劣っている。As is clear from Table 1, the alloy of the present invention is the comparative alloy N
When compared with the phosphor bronze alloy of o12.15.16, it can be seen that the oxide film adhesion is excellent. Invention alloy No.
3.4 has the same composition as comparative alloy No. 17.18, but
Excellent oxide film adhesion due to low surface roughness, Ra, and Rm'ax. Further, comparative alloy No. 013 has low strength, and comparative alloy No. 014 has poor solder heat peeling properties.
本発明合金は比較合金に比べ、半導体機器のリード材、
また端子、コネクター用材料として、バランスのとれた
良好な特性を有している。Compared to comparative alloys, the alloy of the present invention can be used as a lead material for semiconductor devices.
It also has well-balanced properties as a material for terminals and connectors.
本発明合金は酸化膜密着性が著しく改善され、リードフ
レーム等に用いる高力高導電性銅合金として好適である
。The alloy of the present invention has significantly improved oxide film adhesion and is suitable as a high-strength, high-conductivity copper alloy for use in lead frames and the like.
以下余白Margin below
Claims (2)
．００１重量％以上、０．０４重量％以下を含み、残部
Ｃｕおよび不可避的不純物からなり、表面粗さが、中心
線平均粗さ（Ｒａ）で０．２０μｍ以下、最大高さ（Ｒ
ｍａｘ）で１．５μｍ以下であることを特徴とする酸化
膜密着性に優れた高力高導電性銅合金。(1) Mg 0.1% by weight or more, 2.0% by weight or less, P0
．． 0.001% by weight or more and 0.04% by weight or less, the balance consists of Cu and unavoidable impurities, and the surface roughness is 0.20μm or less in center line average roughness (Ra), maximum height (R
A high-strength, high-conductivity copper alloy with excellent oxide film adhesion, characterized by a max) of 1.5 μm or less.
．００１重量％以上、０．０４重量％以下を含み、さら
に、副成分として、Ｂｅ、Ａｌ、Ｓｉ、Ｔｉ、Ｃｒ、Ｍ
ｎ、Ｆｅ、Ｃｏ、Ｎｉ、Ｚｎ、Ｚｒ、Ｍｏ、Ａｇ、Ｃｄ
、Ｐｂ、Ｉｎ、Ｓｎ、Ｂからなる群より選択された１種
又は２種以上を総量で０．００１重量％以上、３．０重
量％以下を含み、残部Ｃｕおよび不可避的不純物からな
り、表面粗さが、中心線平均粗さ（Ｒａ）で０．２０μ
ｍ以下、最大高さ（Ｒｍａｘ）で１．５μｍ以下である
ことを特徴とする酸化膜密着性に優れた高力高導電性銅
合金。(2) Mg 0.1% by weight or more, 2.0% by weight or less, P0
．． 001% by weight or more and 0.04% by weight or less, and further contains Be, Al, Si, Ti, Cr, M as subcomponents.
n, Fe, Co, Ni, Zn, Zr, Mo, Ag, Cd
, Pb, In, Sn, and B in a total amount of 0.001% by weight or more and 3.0% by weight or less, and the remainder is Cu and unavoidable impurities, and the surface Roughness is 0.20μ in center line average roughness (Ra)
A high-strength, highly conductive copper alloy with excellent oxide film adhesion, characterized in that the maximum height (Rmax) is 1.5 μm or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27083688A JPH02118037A (en) | 1988-10-28 | 1988-10-28 | High tensile and high conductivity copper alloy having excellent adhesion of oxidized film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27083688A JPH02118037A (en) | 1988-10-28 | 1988-10-28 | High tensile and high conductivity copper alloy having excellent adhesion of oxidized film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02118037A true JPH02118037A (en) | 1990-05-02 |
Family
ID=17491687
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27083688A Pending JPH02118037A (en) | 1988-10-28 | 1988-10-28 | High tensile and high conductivity copper alloy having excellent adhesion of oxidized film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02118037A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6482276B2 (en) | 2000-04-10 | 2002-11-19 | The Furukawa Electric Co., Ltd. | Copper alloy with punchability, and a manufacturing method thereof |
| US6893514B2 (en) | 2000-12-15 | 2005-05-17 | The Furukawa Electric Co., Ltd. | High-mechanical strength copper alloy |
| US7090732B2 (en) | 2000-12-15 | 2006-08-15 | The Furukawa Electric, Co., Ltd. | High-mechanical strength copper alloy |
| US7172662B2 (en) | 2000-07-25 | 2007-02-06 | The Furukawa Electric Co., Ltd. | Copper alloy material for parts of electronic and electric machinery and tools |
| US7727344B2 (en) | 2000-04-28 | 2010-06-01 | The Furukawa Electric Co., Ltd. | Copper alloy suitable for an IC lead pin for a pin grid array provided on a plastic substrate |
| CN103388089A (en) * | 2013-04-25 | 2013-11-13 | 刘春忠 | Electric current making-breaking metal material and application thereof |
| CN104169448A (en) * | 2012-07-02 | 2014-11-26 | 古河电气工业株式会社 | Copper-alloy wire rod and manufacturing method therefor |
| CN112159911A (en) * | 2020-10-26 | 2021-01-01 | 有研工程技术研究院有限公司 | High-strength high-conductivity fatigue-resistant copper alloy and preparation method and application thereof |
-
1988
- 1988-10-28 JP JP27083688A patent/JPH02118037A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6482276B2 (en) | 2000-04-10 | 2002-11-19 | The Furukawa Electric Co., Ltd. | Copper alloy with punchability, and a manufacturing method thereof |
| US7727344B2 (en) | 2000-04-28 | 2010-06-01 | The Furukawa Electric Co., Ltd. | Copper alloy suitable for an IC lead pin for a pin grid array provided on a plastic substrate |
| US7172662B2 (en) | 2000-07-25 | 2007-02-06 | The Furukawa Electric Co., Ltd. | Copper alloy material for parts of electronic and electric machinery and tools |
| US6893514B2 (en) | 2000-12-15 | 2005-05-17 | The Furukawa Electric Co., Ltd. | High-mechanical strength copper alloy |
| US7090732B2 (en) | 2000-12-15 | 2006-08-15 | The Furukawa Electric, Co., Ltd. | High-mechanical strength copper alloy |
| CN104169448A (en) * | 2012-07-02 | 2014-11-26 | 古河电气工业株式会社 | Copper-alloy wire rod and manufacturing method therefor |
| CN103388089A (en) * | 2013-04-25 | 2013-11-13 | 刘春忠 | Electric current making-breaking metal material and application thereof |
| CN103388089B (en) * | 2013-04-25 | 2015-06-17 | 刘春忠 | Electric current making-breaking metal material and application thereof |
| CN112159911A (en) * | 2020-10-26 | 2021-01-01 | 有研工程技术研究院有限公司 | High-strength high-conductivity fatigue-resistant copper alloy and preparation method and application thereof |
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