JPS59145746A - Copper alloy for lead material of semiconductor apparatus - Google Patents
Copper alloy for lead material of semiconductor apparatusInfo
- Publication number
- JPS59145746A JPS59145746A JP23369983A JP23369983A JPS59145746A JP S59145746 A JPS59145746 A JP S59145746A JP 23369983 A JP23369983 A JP 23369983A JP 23369983 A JP23369983 A JP 23369983A JP S59145746 A JPS59145746 A JP S59145746A
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- weight
- alloy
- lead material
- copper alloy
- semiconductor devices
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Abstract
Description
【発明の詳細な説明】
本発明はトランジスタや集積回路（ＩＣ＞などの半導体
機器のリード材に適する銅合金に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a copper alloy suitable as a lead material for semiconductor devices such as transistors and integrated circuits (ICs).
従来、半導体機器のリード材としては熱膨張係数が低く
、素子およびセラミックスとの接着および封着性の良好
なコバール合金、４２合金などの高ニッケル合金が好ん
で使われてきた。Conventionally, high nickel alloys such as Kovar alloy and 42 alloy have been favorably used as lead materials for semiconductor devices because of their low coefficient of thermal expansion and good adhesion and sealing properties with elements and ceramics.
しかし近年半導体回路の集積度の向上に伴ない消費電力
の高いＩＣが多くなってきたことと。However, in recent years, as the degree of integration of semiconductor circuits has improved, the number of ICs with high power consumption has increased.
封止材料として樹脂が多く使用され、かつ素子とリード
フレームの接着もペーストが多く用いられたことにより
、使用されるリード材も放熱性のよい鋼基合金が使われ
るようになってきた。As resins are often used as sealing materials and pastes are often used to bond elements and lead frames, steel-based alloys with good heat dissipation properties have come to be used as lead materials.
しかし、リード材としては熱伝導性が良い、耐熱性が良
い、ハンダ付は性・メッキ密着性が良い２強度が高い、
廉価である等の広範な諸条件を全て満足す２必要がある
。従来より使用されている無酸素銅、すす入り銅、りん
青銅、鉄入り鋼ガどの銅°基合金は倒れも一長一短がち
υ。However, as a lead material, it has good thermal conductivity and heat resistance, and it has good solderability and plating adhesion, and has high strength.
It is necessary that it satisfies a wide range of conditions such as being inexpensive. The copper-based alloys traditionally used, such as oxygen-free copper, soot-containing copper, phosphor bronze, and iron-containing steel, have their pros and cons.
必ずしも満足し得るものではない。たとえば無酸素銅で
は強度、耐熱性が低く、すす入り銅。It's not always satisfying. For example, oxygen-free copper has low strength and heat resistance, and copper contains soot.
鉄入り銅では強度的に満足できず、りん青銅でｄ熱伝導
性、耐熱性が低いという欠点を有している。かかる点に
鑑み、従来の銅基合金のもつ欠点を改良し、半導体機器
のリード材として好適な諸特性を有する銅合金としてＣ
！ｕ−Ｎｉ−８重合金が提供されているが１強度的に完
全に満足できるものではないので２本発明はＣｕ −Ｎ
ｉ −Ｓｉ合金をさらに改良し、半導体機器のリード材
としてより優れた諸特性を有する銅合金を提供しようと
するものである。Iron-containing copper is not satisfactory in terms of strength, and phosphor bronze has the drawbacks of low thermal conductivity and low heat resistance. In view of these points, we have improved the drawbacks of conventional copper-based alloys and developed C as a copper alloy that has various properties suitable as lead materials for semiconductor devices.
! Although u-Ni-8 heavy alloy has been provided, 1) it is not completely satisfactory in terms of strength, 2) the present invention uses Cu-N
The aim is to further improve the i-Si alloy and provide a copper alloy that has better properties as a lead material for semiconductor devices.
本発明は
（ｔｌ Ｎｉ ； １． Ｏ超〜４．０重量係、
ｅｉ： ０．１〜０３重量係を含み残部が銅および不可
避的々不純物からなる合金に副成分として
Ｐ ： ０．００１〜０．１重量幅。The present invention provides (tl Ni; >1.0 to 4.0 weight ratio,
P: 0.001 to 0.1 weight range as a subcomponent to an alloy containing ei: 0.1 to 0.3 weight range and the remainder consisting of copper and unavoidable impurities.
Ａｅ ： ｏ、ｏｏ１〜０．１重量％。Ae: o, oo1-0.1% by weight.
ｓｂ ； ｏ、ｏ’ｏｉ〜０．．１重量％。sb; o, o'oi~0. ．． 1% by weight.
Ｆｅ ；０．０１ −１．０重量％。Fe; 0.01-1.0% by weight.
Ｃｏ ； ０．０１ −１．０重量％。Co; 0.01-1.0% by weight.
（３ｒ ； ０．０１ 〜１．０重量係。(3r; 0.01 to 1.0 weight ratio.
Ｓｎ ： ［１，０１〜１．０重量％。Sn: [1.01 to 1.0% by weight.
Ａ１； （１，０１〜１．０重量憾。A1; (1.01~1.0 weight.
Ｔ１ ； ｏ、ｏｌ 〜１．０重量４１７ｒ ；
０．０１ 〜１．０重量係。T1; o, ol ~1.0 weight 417r;
0.01 to 1.0 weight ratio.
Ｍｇ ； ０．０１ 〜１．０重量係。Mg; 0.01 to 1.0 weight ratio.
Ｂｅ ； ０．０１ −１．０重量％。Be: 0.01-1.0% by weight.
Ｍｎ ； ０．０１ 〜１．０重量係。Mn; 0.01 to 1.0 weight ratio.
Ｚｎ ； ０．０１ 〜１．０重量受。Zn; 0.01 to 1.0 weight bearing.
から力る群より選択された１種以上を総量でｔＬＯＧ１
〜２．０重量％添加した組成を有することを特徴とする
半導体機器のリード材用鋼合金。The total amount of one or more species selected from the group tLOG1
A steel alloy for lead material of semiconductor devices, characterized by having a composition containing ~2.0% by weight.
（２１Ｎｉ ； １． Ｏ超〜４．０重量係、ｓｘ；ｏ
、ｔ〜０．３重量係を含み、酸素含有量が１０ ｐｐｍ
以下で残部が鋼および不可避的ガ不純物からなる合金に
副成分として
ｐ ： Ｑ、００１〜０．１重量％。(21Ni; over 1.0~4.0 weight ratio, sx;o
, t~0.3% by weight, oxygen content 10 ppm
In the following, p:Q, 001 to 0.1% by weight is added as a subcomponent to an alloy in which the balance is composed of steel and unavoidable impurities.
Ａｓ ： １１に００１〜Ｇ、１重量％。As: 001 to G in 11, 1% by weight.
ｓｂ ； Ｑ、０（１１〜０．１重量幅。sb; Q, 0 (11-0.1 weight range.
Ｆｅ ： ［１，０１〜１．０重量係。Fe: [1.01 to 1.0 weight.
Ｃ！ｏ；Ｑ、０１〜１．０重量係。C! o; Q, 01-1.0 weight ratio.
Ｃ！ｒ ； Ｑ、Ｏｉ −１，０重量％。C! r; Q, Oi -1.0% by weight.
Ｓｎ； α（１１〜１．０重量憾。Sn; α (11 to 1.0 weight.
Ａｌ；Ｑ、０１ 〜１．０重量係。Al; Q, 01 to 1.0 weight ratio.
Ｔ１； α０１〜１，０１重係。T1; α01-1,01 overlap.
Ｚｒ：０．０１〜１，０１重噛。Zr: 0.01 to 1,01 heavy bite.
Ｍｇ： ０．０１ 〜１．０重量係。Mg: 0.01 to 1.0 weight ratio.
Ｂｅ ： ０．０１ 〜１．０重量壬。Be: 0.01 to 1.0 weight.
Ｍｎ ； ０．０１〜１．０重量％。Mn: 0.01 to 1.0% by weight.
Ｚｎ ： ０．０１〜１．０重量％。Zn: 0.01-1.0% by weight.
からなる群より選択された１種以上を総量で０、００１
〜２．０重量％添加した組成を有することを特徴とする
半導体機器のリード材用銅合金である。本発明に係る合
金はリード材に要求される放熱性、耐熱性１強度、′ハ
ンダ付は性、メッキ密着性等のすべてが良好なるもので
ある。The total amount of one or more species selected from the group consisting of 0,001
This is a copper alloy for lead material of semiconductor devices, characterized by having a composition containing ~2.0% by weight. The alloy according to the present invention has good heat dissipation, heat resistance, strength, solderability, plating adhesion, etc. all required for lead materials.
次に本発明合金を構成する合金成分の限定理由を説明す
る。Ｎｉは所定量の８１と共に添加することＫより１本
発明合金の強度を高めしかも高導電性を維持する効果が
あるが、Ｎｉが ゛１０１０重量％以下、リードフレー
ム材の中でも特に強度を必要とするリードフレーム材に
おいては強度が不十分である。またＮ１含有量が４，０
重量％を超えると加工性及びハンダ付は性が低下して好
１しくない。同様に８１は前記Ｎ１と共に添加すること
により２本発明合金の強度及び耐熱性を高めかつ高導電
性を維持するが、Ｓｉ含有量が０，１重量％未満では前
記Ｎ１と共添してもその効果はない。そしてＳｌが増加
するにつれて加工性、導電性が低下してくるが、８１が
０．５重量％以下であれば優れた加工性及び導電性を保
持できる。Next, the reason for limiting the alloy components constituting the alloy of the present invention will be explained. Adding Ni along with a predetermined amount of 81 is more effective than K in increasing the strength of the alloy of the present invention and maintaining high conductivity. The strength of the lead frame material is insufficient. Also, the N1 content is 4.0
If it exceeds % by weight, workability and soldering properties will deteriorate, which is not desirable. Similarly, 81 increases the strength and heat resistance of the alloy of the present invention and maintains high conductivity by adding it together with N1, but if the Si content is less than 0.1% by weight, it cannot be added together with N1. It has no effect. As Sl increases, workability and conductivity decrease; however, if 81 is 0.5% by weight or less, excellent workability and conductivity can be maintained.
そして副成分としてさらに前記成分範囲のＰ、 Ａｓ、
Ｅｌｂ、 Ｆｓ、 Ｃｏ、 Ｃｒ、 Ｓｎ、 Ａｌ、
Ｔｉ、 Ｚｒ、 Ｍｇ、 Ｂｅ。Further, as subcomponents, P, As,
Elb, Fs, Co, Cr, Sn, Al,
Ti, Zr, Mg, Be.
Ｍｎ、 Ｚｎからなる群より選択された１種以上を含有
させることにより半導体機器のリード材として最適な強
度と耐食性が得られるが、その７総量が０．００１重量
％未満では、高強度でかつ耐食性のある合金が得られず
、捷だ２．０重量％を超えると導電性の低下およびハン
ダ付は性の低下が著しくなる為である。また。By containing one or more selected from the group consisting of Mn and Zn, optimal strength and corrosion resistance can be obtained as a lead material for semiconductor devices. However, if the total amount of these 7 is less than 0.001% by weight, high strength and corrosion resistance can be obtained. This is because a corrosion-resistant alloy cannot be obtained, and if the amount exceeds 2.0% by weight, the conductivity and soldering properties will be significantly reduced. Also.
酸素含有量を１０ ｐｐｍ以下とした理由は、酸素含有
量ｆ １０ ｐｐｍ以下とすることにより。The reason why the oxygen content is set to 10 ppm or less is that the oxygen content is set to f 10 ppm or less.
メッキ密着性が著しく改善される為である。This is because plating adhesion is significantly improved.
以下に本発明合金を実施例で説明する。The alloy of the present invention will be explained below using examples.
実施例
第１表に示される本発明合金に係る各種成分組成のイン
ゴットを高周波溶解炉で大気、不活性又は還元性雰囲気
中で溶解鋳造した。次にこれを８００℃で熱間圧延し、
厚さ４ｔｌＩＩＩ＋の板とした。次にこの板を通常の酸
洗処理した後、冷間圧延で厚さ１．０配とした。さらに
７５０’Ｃにて５分間の焼鈍を施した後、冷間圧延で厚
さ０４簡の板とした。最後にこの板を４５０℃にて１時
間熱処理し試料とした。このようにして調整された試料
の評価として１強度は引張試験、耐熱性は加熱時間３０
分における軟化開始温度。EXAMPLES Ingots having various compositions of the alloys of the present invention shown in Table 1 were melted and cast in a high frequency melting furnace in air, an inert atmosphere, or a reducing atmosphere. Next, this was hot rolled at 800℃,
The plate had a thickness of 4tlIII+. Next, this plate was subjected to a conventional pickling treatment and then cold rolled to a thickness of 1.0 mm. After further annealing at 750'C for 5 minutes, it was cold rolled into a plate with a thickness of 0.4mm. Finally, this plate was heat treated at 450°C for 1 hour and used as a sample. As for the evaluation of the sample prepared in this way, 1 strength is determined by tensile test, and heat resistance is determined by heating time 30.
Softening onset temperature in minutes.
導電性（放熱性）は電気伝導率（係工ＡＯ３）によって
示した。ハンダ付は性は垂直式浸漬法で２３０℃のハン
ダ浴（すず６ｏ−鉛４０）に５秒間浸漬し、ハンダのぬ
れの状態を目視観察した。メッキ密着性は試料に厚さ３
μのＡｇ メッキを施し、４５０℃にて５分間加熱して
表面に発生するフクレの数を目視観察した。これらの結
果を比較合金とともに第１表に示した。Electric conductivity (heat dissipation) was shown by electrical conductivity (corresponding to AO3). Soldering was carried out by immersion in a 230° C. solder bath (tin 60-lead 40) for 5 seconds using a vertical dipping method, and the state of solder wetting was visually observed. Plating adhesion is determined by applying a thickness of 3 to the sample.
It was plated with μ Ag and heated at 450° C. for 5 minutes, and the number of blisters generated on the surface was visually observed. These results are shown in Table 1 along with comparative alloys.
第１表に示すごとく本発明に係る合金は十分な導電性と
すぐれた耐熱性、強度、ハンダ付は性および耐食性を兼
ね具えることが明らかであシ２本発明合金は半導体機器
のリード材として最適な合金である。As shown in Table 1, it is clear that the alloy according to the present invention has sufficient electrical conductivity, excellent heat resistance, strength, solderability, and corrosion resistance. 2. The alloy according to the present invention is a lead material for semiconductor devices. It is the most suitable alloy for this purpose.
Claims (2)
０．０１ −１．０重量％。 Ｏｒ ； ０．０１、−１．０重量％。 Ｓｎ ： ｏ、ｏ １ 〜１．０重量％。 Ａ１ ；ｏ、ｏｌ 〜１．０重量係重 量％；［１Ｌ０１ 〜１０重量重量 ％ｒ； α０１〜１．０重量係重 量％： ０．０１ 〜１．０重量％。 Ｂｅ： α０ １ Ｎｉ、 ０重量％。 Ｍｎ ＠ ａｏ １〜１．０重量％。 Ｚｎ ； ＣＬＩＩ １〜１．０重量係重量％なる
群より選択された１種以上を総量でｏ、 ｏ ｏ ｉ〜
２，０重量％添加した組成を有することを特徴とする半
導体機器のリード材用銅合金。(1) Ni: more than 1.0 to 4.0% by weight. Sl; Q, 1-0.3% by weight. Cu and unavoidable impurities; P as a subcomponent in the alloy consisting of the remainder; α001 to 0.1% by weight. As: 0.001-01% by weight. sb: o, oo1 to 0.1% by weight. Fe: 0.01 to 1.0 Weight percentage:
0.01-1.0% by weight. Or; 0.01, -1.0% by weight. Sn: o, o 1 to 1.0% by weight. A1; o, ol ~1.0 wt%; [1L01 ~10 wt% r; α01 ~ 1.0 wt%: 0.01 ~ 1.0 wt%. Be: α0 1 Ni, 0% by weight. Mn@ao 1-1.0% by weight. Zn; CLII 1 to 1.0% by weight of one or more selected from the group consisting of o, o o i~
A copper alloy for lead material of semiconductor devices, characterized by having a composition containing 2.0% by weight.
〜２．０重量％添加した組成を有することを特徴とする
半導体機器のリード材用銅合金。(2) Ni: more than 1.0 to 4.0% by weight. +U; O, t~G, 5 weight section. Ogo: 10 ppm or less. Ou and unavoidable impurities; P as a subcomponent in the alloy consisting of the rest: Q, 001 to α1 weight ratio. As; 0.001 to 0.1% by weight. Sb: [1001 to 0.1% by weight. 'Fe: α01 to 1.0 weight range. Co: (101 to 1.0% by weight; ao1 to 1.9% by weight; Sn: 0.01 to 1.0% by weight; Al': 0.01 to 1.0% by weight; Ti; o, o1 to 1.0% by weight. Zr: 0.01 to 10% by weight. Mg; 0.01 to 1.0% by weight. Be: [1,01 to 1.0% by weight. Mn; 0. 01~1.
A copper alloy for lead material of semiconductor devices, characterized by having a composition containing ~2.0% by weight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23369983A JPS59145746A (en) | 1983-12-13 | 1983-12-13 | Copper alloy for lead material of semiconductor apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23369983A JPS59145746A (en) | 1983-12-13 | 1983-12-13 | Copper alloy for lead material of semiconductor apparatus |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP606182A Division JPS58124254A (en) | 1982-01-20 | 1982-01-20 | Copper alloy for lead material of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59145746A true JPS59145746A (en) | 1984-08-21 |
| JPS6215621B2 JPS6215621B2 (en) | 1987-04-08 |
Family
ID=16959159
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23369983A Granted JPS59145746A (en) | 1983-12-13 | 1983-12-13 | Copper alloy for lead material of semiconductor apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59145746A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59228746A (en) * | 1983-06-09 | 1984-12-22 | Kobe Steel Ltd | Lead wirings for ceramic package ic |
| JPS60218440A (en) * | 1984-04-13 | 1985-11-01 | Furukawa Electric Co Ltd:The | Copper alloy for lead frame |
| JPS60218442A (en) * | 1984-04-13 | 1985-11-01 | Furukawa Electric Co Ltd:The | Copper alloy for lead frame |
| JPS61157651A (en) * | 1984-12-28 | 1986-07-17 | Hitachi Metals Ltd | Copper alloy for lead frame |
| JPS61250134A (en) * | 1985-04-26 | 1986-11-07 | オリン コ−ポレ−シヨン | Multipurpose copper alloy having proper conductivity and high strength |
| JPS6260837A (en) * | 1985-07-31 | 1987-03-17 | ヴイーラント ウエルケ アクチーエンゲゼルシヤフト | Alloy of copper, chromium, titanium and silicon |
| JPS62199742A (en) * | 1986-02-27 | 1987-09-03 | Ngk Insulators Ltd | High strength copper alloy and its manufacture |
| JPH0356636A (en) * | 1989-07-25 | 1991-03-12 | Mitsubishi Shindoh Co Ltd | Connector for electric apparatus made of cu alloy |
| US7182823B2 (en) | 2002-07-05 | 2007-02-27 | Olin Corporation | Copper alloy containing cobalt, nickel and silicon |
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|---|---|---|---|---|
| JPS54402A (en) * | 1977-06-02 | 1979-01-05 | Kokusai Kikou Kk | Work of protecting normal plane suitable for planting and its method of construction |
| JPS54100257A (en) * | 1978-01-25 | 1979-08-07 | Toshiba Corp | Lead frame |
| JPS5616642A (en) * | 1979-07-20 | 1981-02-17 | Furukawa Kinzoku Kogyo Kk | High-strength corrosion-resistant copper alloy |
| JPS572851A (en) * | 1980-06-06 | 1982-01-08 | Nippon Mining Co Ltd | Copper alloy for lead material of semiconductor device |
| JPS5895850A (en) * | 1981-12-02 | 1983-06-07 | Kobe Steel Ltd | Copper alloy for lead frame of integrated circuit |
-
1983
- 1983-12-13 JP JP23369983A patent/JPS59145746A/en active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54402A (en) * | 1977-06-02 | 1979-01-05 | Kokusai Kikou Kk | Work of protecting normal plane suitable for planting and its method of construction |
| JPS54100257A (en) * | 1978-01-25 | 1979-08-07 | Toshiba Corp | Lead frame |
| JPS5616642A (en) * | 1979-07-20 | 1981-02-17 | Furukawa Kinzoku Kogyo Kk | High-strength corrosion-resistant copper alloy |
| JPS572851A (en) * | 1980-06-06 | 1982-01-08 | Nippon Mining Co Ltd | Copper alloy for lead material of semiconductor device |
| JPS5895850A (en) * | 1981-12-02 | 1983-06-07 | Kobe Steel Ltd | Copper alloy for lead frame of integrated circuit |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59228746A (en) * | 1983-06-09 | 1984-12-22 | Kobe Steel Ltd | Lead wirings for ceramic package ic |
| JPS60218440A (en) * | 1984-04-13 | 1985-11-01 | Furukawa Electric Co Ltd:The | Copper alloy for lead frame |
| JPS60218442A (en) * | 1984-04-13 | 1985-11-01 | Furukawa Electric Co Ltd:The | Copper alloy for lead frame |
| JPH0357175B2 (en) * | 1984-04-13 | 1991-08-30 | ||
| JPS6330979B2 (en) * | 1984-12-28 | 1988-06-21 | Hitachi Metals Ltd | |
| JPS61157651A (en) * | 1984-12-28 | 1986-07-17 | Hitachi Metals Ltd | Copper alloy for lead frame |
| JPH08325681A (en) * | 1985-04-26 | 1996-12-10 | Olin Corp | Production of copper-based alloy having improved combinationof ultimate tensile strength, electrical conductivity and stress relaxation resistance |
| JPS61250134A (en) * | 1985-04-26 | 1986-11-07 | オリン コ−ポレ−シヨン | Multipurpose copper alloy having proper conductivity and high strength |
| JPS6260837A (en) * | 1985-07-31 | 1987-03-17 | ヴイーラント ウエルケ アクチーエンゲゼルシヤフト | Alloy of copper, chromium, titanium and silicon |
| JPH057450B2 (en) * | 1985-07-31 | 1993-01-28 | Wieland Werke Ag | |
| JPS62199742A (en) * | 1986-02-27 | 1987-09-03 | Ngk Insulators Ltd | High strength copper alloy and its manufacture |
| JPH036214B2 (en) * | 1986-02-27 | 1991-01-29 | Ngk Insulators Ltd | |
| JPH0356636A (en) * | 1989-07-25 | 1991-03-12 | Mitsubishi Shindoh Co Ltd | Connector for electric apparatus made of cu alloy |
| US7182823B2 (en) | 2002-07-05 | 2007-02-27 | Olin Corporation | Copper alloy containing cobalt, nickel and silicon |
| US8257515B2 (en) | 2002-07-05 | 2012-09-04 | Gbc Metals, Llc | Copper alloy containing cobalt, nickel and silicon |
| US8430979B2 (en) | 2002-07-05 | 2013-04-30 | Gbc Metals, Llc | Copper alloy containing cobalt, nickel and silicon |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6215621B2 (en) | 1987-04-08 |
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