JPH0682713B2 - Tape for semiconductor leads - Google Patents
Tape for semiconductor leadsInfo
- Publication number
- JPH0682713B2 JPH0682713B2 JP61032227A JP3222786A JPH0682713B2 JP H0682713 B2 JPH0682713 B2 JP H0682713B2 JP 61032227 A JP61032227 A JP 61032227A JP 3222786 A JP3222786 A JP 3222786A JP H0682713 B2 JPH0682713 B2 JP H0682713B2
- Authority
- JP
- Japan
- Prior art keywords
- tape
- present
- strength
- lead
- tab
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
Landscapes
- Wire Bonding (AREA)
- Lead Frames For Integrated Circuits (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は半導体素子の外部回路への結線用リード材に関
するものであり、特にTAB法に使用されるテープ状箔導
体をえんとするものである。Description: TECHNICAL FIELD The present invention relates to a lead material for connecting a semiconductor element to an external circuit, and particularly to a tape-shaped foil conductor used in the TAB method. is there.
（従来の技術） 従来半導体素子上には外部結線用Al製電極パッドが形成
され、リードフレームやセラミック基板などの外部回路
とAu線などでワイヤボンドされている。しかし、LSI,VL
SIなどの高集積層化されたICにおいては上記のパッドが
数10〜200個位に達するため生産性の点のみではなく、
技術的加工やワイヤーボンドの限界に近づいている。こ
のためキャリヤーテープを用いる一括ボンディング法と
してTABが注目されている。(Prior Art) Conventionally, an Al electrode pad for external connection is formed on a semiconductor element, and is wire-bonded to an external circuit such as a lead frame or a ceramic substrate by an Au wire or the like. However, LSI, VL
In highly integrated layer ICs such as SI, the above pads reach several tens to 200, so not only the productivity but also
We are approaching the limits of technological processing and wire bonding. Therefore, TAB has attracted attention as a collective bonding method using a carrier tape.
通常リード部を予め穴あけされたポリイミドテープに電
解Cu箔を接着した後、レジストエッチング法によりリー
ドパターンに成型される。パトローネ社のフィルム導体
はテープキャリヤなどと称される。Usually, an electrolytic Cu foil is bonded to a polyimide tape in which lead portions are preliminarily punched, and then a lead pattern is formed by a resist etching method. The film conductor of Patrone is called a tape carrier or the like.
図面はテープキャリヤがTABされた状態の断面図を示す
ものであり、１は半導体素子、２は接続用バンプ、３は
ポリイミドフィルム、４はCu箔リードである。The drawing shows a cross-sectional view of the tape carrier in a TAB state, where 1 is a semiconductor element, 2 is a connecting bump, 3 is a polyimide film, and 4 is a Cu foil lead.
Auなどのバンプとリードの先端は熱圧着されるものであ
り、このため予めAu,Sn−Pbメッキが施され300℃以上の
ヒータをおしあててバンプとリードは接合される。The bumps such as Au and the tips of the leads are thermocompression-bonded. Therefore, Au, Sn-Pb plating is applied in advance, and a heater of 300 ° C or higher is applied to bond the bumps and leads.
（発明が解決するための問題点） 小型高度化した半導体においては、サードの巾細化が強
く要望されており、50μ前後又はこれ以下である。この
ため従来の電解銅箔においては強度、特にTAB時の際の
高温強度に劣るため、リードの変形、破損がおこり高速
TABの操業を阻害するものであった。なお電解銅箔は一
般に圧延純銅箔より強度時に耐熱強度が優れているが、
これでも十分なものとはいえないものであった。(Problems to be Solved by the Invention) In miniaturized and advanced semiconductors, there is a strong demand for narrowing of the width of the third, which is around 50 μm or less. For this reason, the strength of the conventional electrolytic copper foil, especially the high temperature strength during TAB, is inferior, leading to lead deformation and damage.
It was an obstacle to the operation of TAB. Although the electrolytic copper foil is generally superior in heat resistance strength to rolled pure copper foil at the time of strength,
Even this was not enough.
（問題点を解決するための手段） 本発明は熱及び電気に優れた伝導性を有し、しかも耐熱
強度の大きい金属リード導体を開発したものである。(Means for Solving Problems) The present invention has developed a metal lead conductor having excellent heat and electricity conductivity and high heat resistance.
即ち本発明はZr0.03〜0.5％,Cr0.05〜0.5％,Mg0.01〜0.
2％,Sn0.01〜0.3％,Ag0.01〜0.2％,Fe0.02〜0.3％,Ti0.
02〜0.2％,Fe0.01〜0.1％,Pb0.005〜0.02％からなる群
から選ばれた少くとも１種の金属が総量にして0.05〜0.
5％含有し、残部が実質的にCuのCu合金からなる厚さ５
〜50μのテープからなるものである。That is, the present invention is Zr0.03-0.5%, Cr0.05-0.5%, Mg0.01-0.
2%, Sn0.01-0.3%, Ag0.01-0.2%, Fe0.02-0.3%, Ti0.
The total amount of at least one metal selected from the group consisting of 02-0.2%, Fe0.01-0.1% and Pb0.005-0.02% is 0.05-0.
Containing 5%, the balance is made of Cu alloy with a substantial thickness of Cu 5
It consists of ~ 50μ tape.
本発明テープは上記の銅インゴットの圧延、焼鈍を繰返
し行うことによって所定寸法に仕上げられるがその強
度、テープの平滑他及びエッチング性の点から10〜98％
以上の冷間加工率によって仕上げるものである。The tape of the present invention is finished to a predetermined size by repeating the rolling and annealing of the above copper ingot, but the strength, smoothness of the tape, and etching property are 10 to 98%.
It is finished by the above cold working rate.
本発明テープは上記圧延以外にスパッタ等のPVDや溶湯
急冷法などによって製造することが出来る。The tape of the present invention can be manufactured by PVD such as spattering or a melt quenching method other than the above rolling.
又このテープを通常の前記テープキャリヤー製造により
リードに形成できる。Also, this tape can be formed into a lead by the usual tape carrier manufacturing method.
（作用） 本発明テープにおける合金は高導電性を有し且つ耐熱強
度に優れており、TAB条件においても有害な強度劣化を
おこすことがない。又半導体の組立工程においてもリー
ド部の変化を防止することが出来る。又軟化温度が350
〜500℃を有し且つ強度35〜50kg/cm2又はそれ以上にし
て、電動率が約80％IACS以上からなるため、従来の電解
銅箔が有する強度30〜35kg/mm2軟化温度250〜300℃に対
し著しく著れていることが明白である。(Function) The alloy in the tape of the present invention has high conductivity and excellent heat resistance, and does not cause harmful strength deterioration even under TAB conditions. Further, it is possible to prevent the lead portion from changing in the semiconductor assembling process. Also, the softening temperature is 350
Since it has a strength of 35 to 50 kg / cm 2 or higher and an electric conductivity of about 80% IACS or higher, the strength of conventional electrolytic copper foil is 30 to 35 kg / mm 2 and the softening temperature is 250 to 250 It is clear that it is remarkably marked at 300 ° C.
本発明テープに使用するCu合金組成の範囲においてCuと
合金を形成する金属を0.005〜0.5％含有せしめる理由は
0.005％未満の場合には耐熱性、強度が劣り、0.5％を越
える場合には導電率を低下せしめるものである。The reason for containing 0.005 to 0.5% of a metal forming an alloy with Cu in the range of the Cu alloy composition used for the tape of the present invention is
If it is less than 0.005%, the heat resistance and strength are inferior, and if it exceeds 0.5%, the electrical conductivity is lowered.
又本発明テープは冷間加工を行うことにより強度を増大
せしめ且つ平坦化することが出来るものであり、その加
工率は10％以上、望ましくは30％以上が好ましい。しか
し98％を越える過剰な加工率では圧延方向への結晶の配
向が著しくなり材料強度の異方性は元よりエッチングレ
ートの差となり、精密なリード成型を不可能にする。こ
のため冷間圧延加工率は10〜98％、望ましくは30〜90％
である。The tape of the present invention can be increased in strength and flattened by cold working, and the working rate thereof is preferably 10% or more, more preferably 30% or more. However, if the processing rate exceeds 98%, the crystal orientation in the rolling direction becomes remarkable, and the anisotropy of the material strength causes a difference in the etching rate, which makes precise lead molding impossible. Therefore, the cold rolling rate is 10-98%, preferably 30-90%
Is.
なお本発明テープを形成する合金は前記の合金元素とCu
とからなるが、脱酸剤としてP,Zn,Bなどの少量を併用す
ることも可能である。この脱酸剤の一部残存は不可避で
あるが過剰に含有すると導電率の低下などの不都合をま
ねく、このためP,Bで0.15％以下、Zn0.5％以下である。The alloy forming the tape of the present invention is the above-mentioned alloying elements and Cu.
However, it is also possible to use a small amount of P, Zn, B, etc. together as a deoxidizing agent. Although a part of the deoxidizing agent remains inevitable, if it is contained in excess, it may cause inconvenience such as decrease in conductivity. Therefore, P and B are 0.15% or less and Zn are 0.5% or less.
（実施例） （１）第１表に示す組成の合金を溶解鋳造−熱延−焼鈍
−冷延−焼鈍の工程を行った後、最終の中間焼鈍を600
℃にて行い、次いで第１表に示す加工率にて本発明テー
プ（本発明品）及び比較例テープ（比較例品）をえた。(Example) (1) An alloy having the composition shown in Table 1 was melt-cast-hot-rolled-annealed-cold-rolled-annealed and then subjected to a final intermediate annealing of 600.
The tape of the present invention (the product of the present invention) and the tape of the comparative example (the product of the comparative example) were obtained at the processing rates shown in Table 1.
斯くして得た本発明品及び比較例品についてその性能を
試みるために導電率及び350℃×３分間加熱後の引張り
強さを測定した。その結果は第１表に併記した通りであ
る。The electrical conductivity and the tensile strength after heating at 350 ° C. for 3 minutes were measured for the performance of the products of the present invention and comparative products thus obtained. The results are as shown in Table 1.
なお表中No.1〜No.14は本発明品、No.15〜No.24は比較
例品、No.25〜No.26は従来銅箔である。In the table, No. 1 to No. 14 are products of the present invention, No. 15 to No. 24 are comparative example products, and No. 25 to No. 26 are conventional copper foils.
上表から明らかな如く本発明品は導電率及び引張強度に
おいて優れていることが認められた。 As is clear from the above table, it was confirmed that the products of the present invention are excellent in conductivity and tensile strength.
（２）実施例（１）における試料No.4及びNo.6について
最終焼鈍の板厚を変えて冷間加工率を調整して第２表に
示す箔体（厚さ25μ）からなる本発明テープ（本発明
品）及び比較例テープ（比較例品）をえた。(2) For samples No. 4 and No. 6 in Example (1), the present invention comprising the foil body (thickness 25 μm) shown in Table 2 by adjusting the cold working rate by changing the plate thickness of the final annealing A tape (invention product) and a comparative tape (comparative product) were obtained.
斯くして得た本発明品及び比較例品についてその性能を
試みるために圧延方向、巾方向につき引張り強さ、伸び
及び塩化第２鉄液によるサイドエッチングを夫々測定し
た。その結果は第２表に併記した通りである。The tensile strength, the elongation and the side etching by ferric chloride solution were measured in the rolling direction and the width direction in order to try the performance of the products of the present invention and comparative products thus obtained. The results are shown in Table 2 together.
なお、サイドエッチは断面プロファイルの最大深さとし
た。又表中No.4−1,No.4−6,No.6−1,No.6−６は比較例
品である。The side etch was the maximum depth of the cross-sectional profile. No. 4-1, No. 4-6, No. 6-1, and No. 6-6 in the table are comparative examples.
上表より明らかな如く加工率10％未満のNo.4−１及びN
o.6−１は強度が劣るばかりでなくサイドエッチもやや
大い傾向にある。これは焼鈍時の粗な結晶組織が残った
ことが原因である。又No.4−６及びNo.6−６も巾方向へ
の伸びの値が著しく低下するばかりでなくサイドエッチ
が大きくなっている。これは圧延方向に結晶が過剰に延
ばされた結果と推考される。これに比して本発明品No.4
−２〜No.4−５及びNo.6−２〜No.6−５は何れも性能に
おいて優れていることが認められた。 As is clear from the above table, No.4-1 and N with a processing rate of less than 10%
In the case of o.6-1, not only the strength is inferior, but side etching also tends to be slightly large. This is because the rough crystal structure remained during annealing. Also, in Nos. 4-6 and No. 6-6, not only the value of elongation in the width direction is remarkably reduced, but also the side etch is increased. This is presumed to be the result of excessive extension of the crystal in the rolling direction. In comparison with this, the present invention product No. 4
It was confirmed that -2-No.4-5 and No.6-2 to No.6-5 were all excellent in performance.
（効果） 以上詳述した如く本発明半導体用リードテープによれば
高密度にして微細な配線を高精度並に高能率にて実施し
うる等工業上極めて有用なものである。(Effect) As described in detail above, the lead tape for semiconductors of the present invention is extremely useful in industry, for example, high density and fine wiring can be performed with high accuracy and high efficiency.
図面は半導体リードテープにおいてTABによる実装の断
面図である。 １……半導体素子、２……接着用バンプ、３……ポリイ
ミドフィルム、４……Cu箔リード。The drawing is a cross-sectional view of mounting by TAB on a semiconductor lead tape. 1 ... Semiconductor element, 2 ... Adhesive bump, 3 ... Polyimide film, 4 ... Cu foil lead.
Claims (1)
2％,Sn0.01〜0.3％,Ag0.01〜0.2％,Fe0.02〜0.3％,Ti0.
02〜0.2％,Fe0.01〜0.1％,Pb0.005〜0.02％からなる群
から選ばれた少くとも１種の金属が総量にして0.005〜
0.5％含有し残部が実質的にCuのCu合金からなり、冷間
加工率10〜98％にて圧延し、テープ状に加工したことを
特徴とする半導体リード用テープ。1. Zr 0.03 to 0.5%, Cr 0.05 to 0.5%, Mg 0.01 to 0.
2%, Sn0.01-0.3%, Ag0.01-0.2%, Fe0.02-0.3%, Ti0.
The total amount of at least one metal selected from the group consisting of 02-0.2%, Fe0.01-0.1%, Pb0.005-0.02% is 0.005-
A tape for semiconductor leads, characterized in that it is made of a Cu alloy containing 0.5% and the balance is Cu, rolled at a cold working rate of 10 to 98% and processed into a tape shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61032227A JPH0682713B2 (en) | 1986-02-17 | 1986-02-17 | Tape for semiconductor leads |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61032227A JPH0682713B2 (en) | 1986-02-17 | 1986-02-17 | Tape for semiconductor leads |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62189738A JPS62189738A (en) | 1987-08-19 |
| JPH0682713B2 true JPH0682713B2 (en) | 1994-10-19 |
Family
ID=12353080
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61032227A Expired - Lifetime JPH0682713B2 (en) | 1986-02-17 | 1986-02-17 | Tape for semiconductor leads |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0682713B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0815170B2 (en) * | 1987-07-07 | 1996-02-14 | 株式会社ジャパエナジー | Method of manufacturing film carrier |
| JPH0616522B2 (en) * | 1987-03-04 | 1994-03-02 | 日本鉱業株式会社 | Copper alloy foil for tape carrier |
| JPH0616523B2 (en) * | 1987-07-07 | 1994-03-02 | 日本鉱業株式会社 | Film carrier and manufacturing method thereof |
| JPH02198149A (en) * | 1989-01-27 | 1990-08-06 | Hitachi Cable Ltd | Film carrier board of semiconductor device |
| JP4118832B2 (en) | 2004-04-14 | 2008-07-16 | 三菱伸銅株式会社 | Copper alloy and manufacturing method thereof |
-
1986
- 1986-02-17 JP JP61032227A patent/JPH0682713B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62189738A (en) | 1987-08-19 |
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