JPH0319702B2 - - Google Patents

Info

Publication number
JPH0319702B2
JPH0319702B2 JP13256586A JP13256586A JPH0319702B2 JP H0319702 B2 JPH0319702 B2 JP H0319702B2 JP 13256586 A JP13256586 A JP 13256586A JP 13256586 A JP13256586 A JP 13256586A JP H0319702 B2 JPH0319702 B2 JP H0319702B2
Authority
JP
Japan
Prior art keywords
wire
core
copper
purity
ball
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP13256586A
Other languages
Japanese (ja)
Other versions
JPS62287634A (en
Inventor
Yoichi Yorita
Masaaki Shimotomai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP61132565A priority Critical patent/JPS62287634A/en
Publication of JPS62287634A publication Critical patent/JPS62287634A/en
Publication of JPH0319702B2 publication Critical patent/JPH0319702B2/ja
Granted legal-status Critical Current

Links

Classifications

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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0104—Zirconium [Zr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/012—Semiconductor purity grades
    • H01L2924/01204—4N purity grades, i.e. 99.99%
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal Extraction Processes (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

（発明の利用分野） 本発明は、半導体素子上の電極と外部リードと
の結線に用いる半導体素子結線用細線に関する。 （従来技術） ICやLSI等の半導体素子において、例えば第３
図に示すようにSi半導体チツプ１の電極２と外部
リードフレーム３とを結線用細線４で電気接続す
るようになつているが、この接続は作業性に優れ
たボールボンデイング法が主に用いられている。
本方法は第２図に示すようにこのボンデイング法
に用いられるキヤピラリ５の先端部に結線用細線
４を露出させて、その先端部を電気アークあるい
は水素アークにより加熱させてボール６を形成
し、これを第３図に示すように半導体チツプ１の
電極２の熱圧着により接続し、次に弧を描くよう
に細線４を延ばし、外部リードフレーム３に細線
４の一部を圧接し、切断するようにしたものであ
る。 従つてこの種結線用細線４としては、半導体素
子の電極への圧着に用いるキヤピラリ５との接触
通過時に細粉がキヤピラリに付着して細粉詰まり
を起こさせないようにすること、上記電極に充分
に均一に圧接するよう安定したボール６に形成さ
れること、ボール６の電極への接着強度が高いこ
と、結線用細線４が上記電極２と外部リードフレ
ーム３と接続されたとき弧を描くよう、即ちルー
プ状につながれること（このループ線が第３図で
一点鎖線で示すように寝すぎるとボール６の根元
で断線されやすい）、などが要求され、従来から
主に金線が使用されている。 しかし金線は非常に高価であるから価格的に廉
価な銅線を用いる試みがなされているが、銅線を
用いてボールボンデイング法によつて熱圧着する
と銅粉が発生してキヤピラリの銅粉詰まりを起こ
したり、接着強度が充分に出ないなどの欠点があ
つた。 これを改善するために銅にBe、Sn、Zn、Ag、
Zr、Cr、Fe等を0.1〜２重量％添加した銅合金が
提案されているが、これをボールボンデイング法
にて使用した場合次のような欠点があつた。 まずSi素子上に銅合金ボールを熱圧着する際、
銅合金ボールの硬さが必要以上に大きいため、素
子電極面にクラツクを生じる。 銅合金ボールの硬さを小さくするために、熱圧
着温度あるいはキヤピラリ温度を上げるとループ
線が寝すぎて良好なループ形成性をもたすことが
不充分になり断線の原因となる恐れがある。 また銅合金のほとんどを占める銅の細粉がキヤ
ピラリに接触する際に多く発生し、キヤピラリの
銅粉詰さりを起こし結線作業上支障をきたす事態
があつた。 （発明が解決しようとする問題点） 本発明の目的は銅の物理的特性および低価格性
を失うことなく、これを最大限に生かし、かつボ
ールボンデイングに適した硬さで、その作業性に
優れた半導体素子結線用細線を提供しようとする
ものである。 （問題点を解決するための手段） 上記目的を達成するために本発明の第１は、純
度99.99重量％以上のCuからなり、これを伸線加
工すると共に、最終工程でスキンパス加工するこ
とにより第１図で示すように表面層Ｂの硬さを芯
部Ａよりも25〜45％高くしてなる構成を採用する
ものである。 また本発明の第２は、純度99.99重量％以上の
Cuを芯部として、これにAg、Sn、Be、Zr、Zn、
Al、Crからなる群から選ばれた１種の金属から
なる被覆層を設け、この状態で伸線加工すると共
に、最終工程でスキンパス加工することにより表
面層の硬さを芯部よりも30〜50％高くしてなる構
成を採用するものである。 （作用） 銅の純度を99.99重量％以上としたのは結線用
細線の変形挙動を金線の場合に近づけ、圧着時に
Si半導体素子を損傷することなく充分安定であ
り、高導電子と信頼性に優れた接続を得るため
で、99.99重量％未満では、Si半導体素子にクラ
ツクを生じさせやすいことがわかつている。 さらにこのような高純度の芯線に、最終工程で
スキンパス加工（低減面率のもとで軽い冷間伸線
を行うこと）を行うのは、銅の表面のみを硬化さ
せるためで、この場合表面層の硬さを芯部よりも
25〜45％高くすることが必要で、このためにはス
キンパス加工の加工度は５〜20％の範囲内で行
う。加工度が４％以下では加工硬度が小さく、ま
た21％以上では伸線の芯部まで加工硬化し、この
種細線の伸びを低下およびカール発生の原因とな
る。 また第２発明において、上記のような高純度の
銅を芯部として使用し、これにAg、Sn、Be、
Zr、Zn、Al、Crからなる群から選ばれた１種の
金属からなる被覆層を設け、この状態で伸線加工
するようにしたのは、最終工程のスキンパス加工
による加工硬化性を一層高め、細線の曲げ強度を
高めるためである。なおこの場合スキンパス加工
後の被覆層（被覆拡散層）Ａの厚さは第１図に示
すように線径Ｄ（直径）の１／10〜３／10の比率
に形成することが好ましい。 （実施例） 以下、この発明の実施例に係る半導体結線用細
線１〜６と比較例の同細線７〜９についてシリコ
ン素子のクラツク不良率、細線の硬度（芯部と表
面層の硬度）、銅粉の発生率、ボール形成性、ル
ープ形成性を測定した。下記表１がそれである。 なおこの発明に係る実施例No.１〜No.６は次のよ
うにして製造されたものである。即ち純度99.998
％の再電解銅を素材料としてこれを伸線機によつ
て26μφまで伸線しかつフル焼鈍を行い、最終工
程で５〜20％の加工度でスキンパス加工により
25μφの細線に仕上げたものである。また比較例
のNo.７〜No.９に示すものは、上記と同一の製造工
程でスキンパス加工の加工度を変えたものであ
る。 (Field of Application of the Invention) The present invention relates to a thin wire for connecting a semiconductor element used for connecting an electrode on a semiconductor element and an external lead. (Prior art) In semiconductor devices such as ICs and LSIs, for example, the third
As shown in the figure, the electrodes 2 of the Si semiconductor chip 1 and the external lead frame 3 are electrically connected using a thin connection wire 4, but this connection is mainly performed using the ball bonding method, which has excellent workability. ing.
In this method, as shown in FIG. 2, a fine wire 4 for connection is exposed at the tip of a capillary 5 used in this bonding method, and the tip is heated by an electric arc or a hydrogen arc to form a ball 6. As shown in FIG. 3, these are connected by thermocompression bonding of the electrodes 2 of the semiconductor chip 1, and then the thin wire 4 is extended in an arc, a part of the thin wire 4 is pressed against the external lead frame 3, and then cut. This is how it was done. Therefore, the thin wire 4 for this kind of connection must be made so as to prevent fine powder from adhering to the capillary and clogging the capillary when it passes through contact with the capillary 5 used for crimping the semiconductor element to the electrode, and to be sufficiently thin for the electrode. The ball 6 must be formed into a stable ball 6 so as to be evenly pressed against the electrode, the adhesive strength of the ball 6 to the electrode must be high, and the thin wire 4 for connection must form an arc when connected to the electrode 2 and the external lead frame 3. In other words, it is required to be connected in a loop shape (if this loop wire is bent too much as shown by the dashed line in Fig. 3, it is likely to be disconnected at the base of the ball 6), and so conventionally gold wire has been mainly used. ing. However, since gold wire is very expensive, attempts have been made to use cheaper copper wire, but when copper wire is used for thermocompression bonding using the ball bonding method, copper powder is generated and the capillary is made of copper powder. It had drawbacks such as clogging and insufficient adhesive strength. To improve this, copper has Be, Sn, Zn, Ag,
Copper alloys to which 0.1 to 2% by weight of Zr, Cr, Fe, etc. are added have been proposed, but when used in the ball bonding method, the following drawbacks occurred. First, when thermocompression bonding a copper alloy ball onto a Si element,
Since the hardness of the copper alloy ball is greater than necessary, cracks occur on the element electrode surface. If the thermocompression temperature or capillary temperature is increased in order to reduce the hardness of the copper alloy ball, the loop wire may become too loose and may not be able to form a good loop, leading to wire breakage. . In addition, a large amount of fine copper powder, which makes up most of the copper alloy, is generated when it comes into contact with the capillary, causing the capillary to become clogged with copper powder and causing problems in wiring work. (Problems to be Solved by the Invention) The purpose of the present invention is to make full use of copper without losing its physical properties and low cost, and to create a hardness suitable for ball bonding that improves its workability. The purpose is to provide an excellent thin wire for connecting semiconductor devices. (Means for Solving the Problems) In order to achieve the above object, the first aspect of the present invention is to wire-draw Cu with a purity of 99.99% by weight or more and to perform skin pass processing in the final process. As shown in FIG. 1, the hardness of the surface layer B is 25 to 45% higher than that of the core A. The second aspect of the present invention is that the purity is 99.99% by weight or more.
With Cu as the core, Ag, Sn, Be, Zr, Zn,
A coating layer made of one type of metal selected from the group consisting of Al and Cr is provided, and the wire is drawn in this state, and a skin pass process is applied in the final process to increase the hardness of the surface layer by 30 to 30% higher than that of the core. It adopts a configuration in which the price is increased by 50%. (Function) The reason why the copper purity is 99.99% by weight or more is that the deformation behavior of the thin wire for connection is similar to that of gold wire, and it is made easier during crimping.
This is to ensure sufficient stability without damaging the Si semiconductor device and to obtain a highly reliable connection with the highly conductive electrons.It is known that if the amount is less than 99.99% by weight, it tends to cause cracks in the Si semiconductor device. Furthermore, the reason why such a high-purity core wire is subjected to skin pass processing (light cold wire drawing with a reduced area ratio) in the final process is to harden only the surface of the copper. Make the layer harder than the core.
It is necessary to increase the thickness by 25 to 45%, and for this purpose, the degree of processing of skin pass processing should be within the range of 5 to 20%. If the degree of work is less than 4%, the work hardness will be small, and if it is more than 21%, work hardening will occur to the core of the drawn wire, reducing the elongation of this type of thin wire and causing curling. Further, in the second invention, the above-mentioned high-purity copper is used as the core, and Ag, Sn, Be,
The reason why we provided a coating layer made of one type of metal selected from the group consisting of Zr, Zn, Al, and Cr and drew the wire in this state was to further improve the work hardening properties of the skin pass process in the final process. This is to increase the bending strength of the thin wire. In this case, it is preferable that the thickness of the coating layer (coating diffusion layer) A after the skin pass processing be formed at a ratio of 1/10 to 3/10 of the wire diameter D (diameter), as shown in FIG. (Example) Hereinafter, the crack failure rate of silicon elements, the hardness of the thin wire (hardness of the core and surface layer), The generation rate of copper powder, ball-forming property, and loop-forming property were measured. This is shown in Table 1 below. Note that Examples No. 1 to No. 6 according to the present invention were manufactured as follows. i.e. purity 99.998
% of re-electrolyzed copper as a material, this is drawn to 26μφ using a wire drawing machine, fully annealed, and in the final process, skin pass processing is performed with a processing degree of 5 to 20%.
It is finished with a fine wire of 25μφ. Comparative Examples No. 7 to No. 9 are the same manufacturing process as above, but the degree of skin pass processing is changed.

【表】 また第２発明に係る実施例No.１〜No.６に示す芯
部Ａおよび被覆層Ｂは次のようにして製造したも
のである。即ち純度99.998％の再電解銅を素材料
としてこれを伸線機によつて0.9mmφまで伸線加
工し、これを酸化物および油脂除去の前処理の後
に、電気メツキまたは溶融メツキ法などにより表
２に示す元素金属をその濃度が100〜300ppmにな
るようメツキ条件を設定してメツキ処理し、しか
る後に全体の直径が26μφになるまで伸線・熱処
理（焼鈍）加工をし、更に加工度10％のスキンパ
ス加工により25μφとし、被覆拡散層Ｂの硬さが
芯部Ａよりも25〜45％高くなるような厚さ0.05〜
0.2μの被覆拡散層Ｂを形成するようにしたもので
ある。また比較例のNo.７〜No.９を示すものは、上
記と同一の製造工程で銅の純度を変えてものであ
る。この測定結果は下記表２に示すとおりであ
る。[Table] Furthermore, the core portion A and the coating layer B shown in Examples No. 1 to No. 6 according to the second invention were manufactured as follows. That is, using re-electrolyzed copper with a purity of 99.998% as a material, it is drawn to a diameter of 0.9 mm using a wire drawing machine, and after pre-treatment to remove oxides and oil, it is exposed by electroplating or melt plating. The elemental metal shown in 2 is plated by setting the plating conditions so that its concentration is 100 to 300 ppm, and then wire drawn and heat treated (annealed) until the overall diameter becomes 26μφ, and further processed with a working degree of 10 % skin pass processing to 25 μφ, and the thickness is 0.05 to 0.05 so that the hardness of the coating diffusion layer B is 25 to 45% higher than that of the core part A.
A covering diffusion layer B having a thickness of 0.2μ is formed. Moreover, Comparative Examples No. 7 to No. 9 are obtained by changing the purity of copper in the same manufacturing process as above. The measurement results are shown in Table 2 below.

【表】 （効果） 本発明によれば、表１及び表２から明らなよう
に99.99％以上の純度の高い銅をそのまま細線と
して採用するため、高導電性と良好なボール形成
性を維持できると共に、半導体素子に対するクラ
ツク発生度を無くすることができ、なおかつ表面
層の適度の硬度によつて芯部の銅を保護し、キヤ
ピラリ接触時の銅粉の発生が皆無となり、更にル
ープの形成性が良好となることが分かる。[Table] (Effects) According to the present invention, as is clear from Tables 1 and 2, copper with a high purity of 99.99% or more is directly used as a thin wire, thus maintaining high conductivity and good ball forming properties. At the same time, it is possible to eliminate the occurrence of cracks in the semiconductor element, and the moderate hardness of the surface layer protects the copper in the core, eliminating the generation of copper powder when the capillary contacts, and furthermore, forming loops. It can be seen that the properties are improved.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は、本発明の一実施例における半導体素
子結線用細線の拡大断面図、第２図は同細線をキ
ヤピラリに挿通させて、その先端部で形成される
ボールの状態を示す説明図、第３図は同細線で半
導体素子に接続された状態を示す説明図である。 FIG. 1 is an enlarged sectional view of a thin wire for connecting semiconductor elements in an embodiment of the present invention, and FIG. 2 is an explanatory diagram showing the state of a ball formed at the tip of the thin wire when the thin wire is inserted into a capillary. FIG. 3 is an explanatory diagram showing a state in which the thin wire is connected to a semiconductor element.

Claims (1)

【特許請求の範囲】 １ 純度99.99重量％以上のCuからなり、これを
伸線加工すると共に、最終工程でスキンパス加工
することにより表面層の硬さを芯部よりも25〜45
％高くしてなる半導体素子結線用細線。 ２ 純度99.99重量％以上のCuを芯部として、こ
れにAg、Sn、Be、Zr、Zn、Al、Crからなる群
から選ばれた１種の金属からなる被覆層を設け、
この状態で伸線加工すると共に、最終工程でスキ
ンパス加工することにより表面層の硬さを芯部よ
りも30〜50％高くしてなる半導体素子結線用細
線。 ３ 前記表面層（被覆拡散層）の厚さは線径の
１／10〜３／10に形成してなる特許請求の範囲第
２項記載の半導体素子結線用細線。[Claims] 1. Made of Cu with a purity of 99.99% by weight or more, it is wire drawn and subjected to skin pass processing in the final process to make the surface layer harder by 25-45% than the core.
% high fine wire for connecting semiconductor devices. 2 Cu with a purity of 99.99% by weight or more is used as a core, and a coating layer made of one type of metal selected from the group consisting of Ag, Sn, Be, Zr, Zn, Al, and Cr is provided,
Fine wire for connecting semiconductor devices is drawn in this state and subjected to skin pass processing in the final process to make the surface layer 30 to 50% harder than the core. 3. The thin wire for connecting semiconductor devices according to claim 2, wherein the thickness of the surface layer (coating diffusion layer) is 1/10 to 3/10 of the wire diameter.
JP61132565A 1986-06-06 1986-06-06 Fine wire for semiconductor element connection Granted JPS62287634A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61132565A JPS62287634A (en) 1986-06-06 1986-06-06 Fine wire for semiconductor element connection

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61132565A JPS62287634A (en) 1986-06-06 1986-06-06 Fine wire for semiconductor element connection

Publications (2)

Publication Number Publication Date
JPS62287634A JPS62287634A (en) 1987-12-14
JPH0319702B2 true JPH0319702B2 (en) 1991-03-15

Family

ID=15084274

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61132565A Granted JPS62287634A (en) 1986-06-06 1986-06-06 Fine wire for semiconductor element connection

Country Status (1)

Country Link
JP (1) JPS62287634A (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5981087B2 (en) * 2010-05-14 2016-08-31 古河電気工業株式会社 Flat rectangular copper wire and manufacturing method thereof, flat rectangular copper wire for solar cell and manufacturing method thereof
DE102010031993B4 (en) * 2010-07-22 2015-03-12 Heraeus Materials Technology Gmbh & Co. Kg A method of manufacturing a bonding wire, bonding wire and assembly comprising such a bonding wire.
JP6020972B2 (en) * 2015-06-11 2016-11-02 日立金属株式会社 Copper bonding wire
US20210193350A1 (en) * 2018-10-01 2021-06-24 Sumitomo Electric Toyama Co., Ltd. Manufacturing method of plated wire rod and manufacturing apparatus of plated wire rod

Also Published As

Publication number Publication date
JPS62287634A (en) 1987-12-14

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