JPS61266541A - Copper alloy - Google Patents

Copper alloy

Info

Publication number
JPS61266541A
JPS61266541A JP10893985A JP10893985A JPS61266541A JP S61266541 A JPS61266541 A JP S61266541A JP 10893985 A JP10893985 A JP 10893985A JP 10893985 A JP10893985 A JP 10893985A JP S61266541 A JPS61266541 A JP S61266541A
Authority
JP
Japan
Prior art keywords
alloy
strength
copper
present
copper alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10893985A
Other languages
Japanese (ja)
Inventor
Koji Nakajima
孝司 中島
Kenji Kubozono
久保薗 健治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10893985A priority Critical patent/JPS61266541A/en
Publication of JPS61266541A publication Critical patent/JPS61266541A/en
Pending legal-status Critical Current

Links

Landscapes

  • Conductive Materials (AREA)

Abstract

PURPOSE:To improve the strength and electric conductivity by an inexpensive composition by adding prescribed percentages of Ni, Al, P, Mg, Mn, Si, etc. CONSTITUTION:This Cu alloy consists of, by weight, 0.1-2% Ni, 0.1-3% Al, 0.01-0.15% P and the balance Cu or further contains 0.01-1.5% in total of one or more among 0.1-1% Mg, 0.01-0.6% Mn, 0.01-0.6% Si, 0.01-0.1% Zn, 0.01-0.1% B, 0.01-1% Cr and 0.01-0.3% Zr. The alloy is inexpensive, has superior strength and electric conductivity and is chiefly used as a material for a lead frame for a semiconductor.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は電子機器用、主として半導体のIJ  pS7
レーム用材料として用いられる銅基合金に関するもので
ある。
[Detailed Description of the Invention] (Industrial Application Field) The present invention is for electronic equipment, mainly semiconductor IJ pS7.
This invention relates to a copper-based alloy used as a frame material.

(従来の技術) 半導体のリードフレーム用材料としては、一般にFe−
Ni系の427αイが使用されてきた力;、集積回路の
高密度化に伴って195アロイ等の銅系合金が広く用い
られる様になってきている。
(Prior art) Generally, Fe-
Although Ni-based 427α alloy has been used, copper-based alloys such as 195 alloy are becoming widely used as integrated circuits become more densely integrated.

(発明が解決しようとする問題点) しかし、42アロイは高価格であシ、また昨今の高密度
集積化に伴って要求される熱放散性に劣るという欠点を
有する。−万、熱放散性に優れる銅系合金においても、
19470イ等の安価な合金は機械強度が不足しており
、比較的高強度を有する195アロイはCO′f!f:
含有するために高価であるという難点がある。
(Problems to be Solved by the Invention) However, 42 alloy has the drawbacks of being expensive and inferior in heat dissipation properties required with recent high-density integration. - Even in copper-based alloys with excellent heat dissipation,
Cheap alloys such as 19470 lack mechanical strength, while 195 alloy, which has relatively high strength, has CO'f! f:
It has the disadvantage that it is expensive because it contains it.

(問題点を解決するための手段) 本発明は、前記42了ロイ及び銅系合金の欠点を改善す
るためになされたもので、安価な構成元素によシ195
70イ相当の熱放散性と高強度を有する銅基合金を提供
するものである。
(Means for Solving the Problems) The present invention has been made to improve the drawbacks of the 42% alloy and copper-based alloys, and uses inexpensive constituent elements.
The present invention provides a copper-based alloy that has heat dissipation properties equivalent to 70 I and high strength.

一般に銅系合金において、高強度・高導電性という相反
する特性を得るためには、194アロイ等の固溶硬化を
主体とした合金では困難であり、これらの特性を得るた
めには時効硬化や複合材化、化合物による分散強化等の
方法を用いる必要がある。しかし、前者の時効硬化や複
合材化では、低価格という目的は達成し難い。
In general, in copper alloys, it is difficult to obtain contradictory properties such as high strength and high conductivity with alloys that are mainly solid solution hardened, such as 194 alloy, and in order to obtain these properties, age hardening and It is necessary to use methods such as making composite materials and dispersion strengthening using compounds. However, with the former method of age hardening and composite materials, it is difficult to achieve the goal of low cost.

即ち本発明は、後者の化合物分散強化を利用したもので
あシ、その成分中Ni 、 A4 Pの範囲は、金属間
化合物の生成に必要な最小量全下限とし、導電性を著し
く損うことのない量を上限として定めた。Mg 、 M
n 、 Siは金属間化合物の生成を助長する効果と脱
酸剤としての効果を有し、Znは脱酸剤としての効果の
他にはんだめっきを施した場合の拡散層生成による剥離
を抑制することを目的としたものである。またB、 C
r 、 Zrは耐熱性と強度の向上を目的としたもので
ある。
That is, the present invention utilizes the latter compound dispersion strengthening, and the range of Ni and A4P in the components is set to the lower limit of the minimum amount necessary for the generation of intermetallic compounds, and the range of Ni and A4P is set to the lower limit of the minimum amount necessary for the generation of intermetallic compounds, so as to significantly impair conductivity. The upper limit was set as the amount without. Mg, M
n, Si has the effect of promoting the formation of intermetallic compounds and the effect of deoxidizing agent, and Zn has the effect of promoting the generation of intermetallic compounds and the effect of deoxidizing agent, and in addition to the effect of deoxidizing agent, Zn suppresses peeling due to the formation of a diffusion layer when solder plating is applied. It is intended for this purpose. Also B, C
r and Zr are intended to improve heat resistance and strength.

(作 用) 本発明によれば、上述の添加元素Ni、At、Pによj
) Ni −Ak * Ni−At、 Ni −P等の
金属間化合物を組織中に均一に分散生成させ、導電率の
低下を抑えつつ合金の強度向上を達成することが可能と
なるのである。
(Function) According to the present invention, the above-mentioned additive elements Ni, At, and P
) Ni-Ak*Ni-At, Ni-P, and other intermetallic compounds can be uniformly dispersed and generated in the structure, thereby making it possible to improve the strength of the alloy while suppressing a decrease in electrical conductivity.

(実施例) 以下実施例によp本発明を具体的に説明する。(Example) The present invention will be specifically explained below with reference to Examples.

実施例1〜4.比較例1〜5 次表1に示す各圧延材を得る几めの各試料を、大気中高
周波炉にて溶製し、得られた鋳塊は熱間圧延を行った後
、表裏面に面側を施した。次に冷間圧延と焼鈍を繰p返
し加え、各々最終圧態率37チで厚さ0.25■の圧延
上p材を得た。
Examples 1-4. Comparative Examples 1 to 5 Each sample of the size shown in Table 1 was melted in a high-frequency furnace in the atmosphere, and the obtained ingot was hot rolled and then The sides were decorated. Next, cold rolling and annealing were repeated to obtain a rolled material having a final rolling ratio of 37 cm and a thickness of 0.25 cm.

得られた各材料の成分分析を行うと共にそれらの特性を
調べ結果を同表1に示した。
The components of each of the obtained materials were analyzed and their properties were investigated, and the results are shown in Table 1.

上表の結果によれば、本発明合金は導電率33〜41 
% lAC3,硬度148〜175’を示しチオ9、比
較例4の如き従来合金の安価代替材として使用可能な特
性を有していることがわかる。
According to the results in the table above, the alloy of the present invention has a conductivity of 33 to 41.
% lAC3 and hardness of 148 to 175', indicating that it has properties that can be used as a low-cost alternative to conventional alloys such as Thio 9 and Comparative Example 4.

また本発明合金は、主用途として半導体のり−Pフレー
ム用と記載したが、従来のりん青銅に相当する強度と数
倍の導電性を有しかつ安価な組成であることから、コネ
クター等の電子機器用材料としても極めて有用である。
In addition, although the main use of the present alloy is described as being for semiconductor glue-P frames, it has a strength equivalent to that of conventional phosphor bronze, several times the conductivity, and is inexpensive, so it can be used in electronic applications such as connectors. It is also extremely useful as a material for equipment.

(発明の効果) 上記説明及び実施例から明らかなように、本発明によれ
ば、より安価な組成で19570イ相当ノ強度と427
0イよシもはるかに優れた導電性を有する半導体のIJ
−1’;yレーム用材料が得られ、その工業的利用効果
は極めて大きい。
(Effects of the Invention) As is clear from the above explanations and examples, according to the present invention, the strength equivalent to 19570 and 427
Semiconductor IJ has much better conductivity than 0
A material for -1';y frames is obtained, and its industrial use effect is extremely large.

Claims (2)

【特許請求の範囲】[Claims] (1)重量%にて0.1〜2%のNi、0.1〜3%の
Al及び0.01〜0.15%のPと残部Cu及び不可
避の不純物よりなる銅基合金。
(1) A copper-based alloy consisting of 0.1 to 2% Ni, 0.1 to 3% Al, 0.01 to 0.15% P, and the balance Cu and unavoidable impurities in weight percent.
(2)前記成分に0.1〜1%のMg、0.01〜0.
6%のMn、0.01〜0.6%のSi、0.01〜0
.1%のZn、0.01〜0.1%のB、0.01〜1
.0%のCr、0.01〜0.3%のZrの内1種又は
2種以上を含み、その含有量の合計が0.01〜1.5
%からなる特許請求の範囲(1)項記載の銅基合金。
(2) 0.1-1% Mg in the above components, 0.01-0.
6% Mn, 0.01-0.6% Si, 0.01-0
.. 1% Zn, 0.01-0.1% B, 0.01-1
.. Contains one or more of 0% Cr and 0.01 to 0.3% Zr, and the total content is 0.01 to 1.5
% of the copper-based alloy according to claim (1).
JP10893985A 1985-05-21 1985-05-21 Copper alloy Pending JPS61266541A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10893985A JPS61266541A (en) 1985-05-21 1985-05-21 Copper alloy

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10893985A JPS61266541A (en) 1985-05-21 1985-05-21 Copper alloy

Publications (1)

Publication Number Publication Date
JPS61266541A true JPS61266541A (en) 1986-11-26

Family

ID=14497479

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10893985A Pending JPS61266541A (en) 1985-05-21 1985-05-21 Copper alloy

Country Status (1)

Country Link
JP (1) JPS61266541A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61284946A (en) * 1985-06-11 1986-12-15 Mitsubishi Shindo Kk Cu alloy lead blank for semiconductor device
JP2019196514A (en) * 2018-05-08 2019-11-14 株式会社神戸製鋼所 Copper alloy material for terminal of aluminum wire harness, and terminal

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61284946A (en) * 1985-06-11 1986-12-15 Mitsubishi Shindo Kk Cu alloy lead blank for semiconductor device
JPH0478701B2 (en) * 1985-06-11 1992-12-11 Mitsubishi Shindo Kk
JP2019196514A (en) * 2018-05-08 2019-11-14 株式会社神戸製鋼所 Copper alloy material for terminal of aluminum wire harness, and terminal

Similar Documents

Publication Publication Date Title
JPS5853057B2 (en) Highly conductive copper-based alloy
JP2001207229A (en) Copper alloy for electronic material
JPS58124254A (en) Copper alloy for lead material of semiconductor device
JPS60218440A (en) Copper alloy for lead frame
JPS60184655A (en) High-strength copper alloy having high electric conductivity
JPS59170231A (en) High tension conductive copper alloy
JPS61266540A (en) Copper alloy
JPS61257443A (en) Cu alloy as lead material for semiconductor device
JP2956696B1 (en) High strength and high conductivity copper alloy and its processing method
JPS61266541A (en) Copper alloy
JPH0534409B2 (en)
JPS6256937B2 (en)
JPS6338547A (en) High strength conductive copper alloy
JPH0219433A (en) Copper alloy for electronic equipment
JP3379380B2 (en) High strength and high conductivity copper alloy
JPS6311418B2 (en)
JPS6142772B2 (en)
JPS5939492B2 (en) High strength copper alloy for conductive use with softening resistance
JPH0356294B2 (en)
JPH0469217B2 (en)
JPS60194031A (en) Copper alloy for lead material for semiconductor device
JPH02129326A (en) High strength copper alloy
JPS63192835A (en) Lead material for ceramic package
JPS64458B2 (en)
JPS60218442A (en) Copper alloy for lead frame