CN103219247A - Manufacturing method of silver-plated bonding copper wire - Google Patents
Manufacturing method of silver-plated bonding copper wire Download PDFInfo
- Publication number
- CN103219247A CN103219247A CN2013100654928A CN201310065492A CN103219247A CN 103219247 A CN103219247 A CN 103219247A CN 2013100654928 A CN2013100654928 A CN 2013100654928A CN 201310065492 A CN201310065492 A CN 201310065492A CN 103219247 A CN103219247 A CN 103219247A
- Authority
- CN
- China
- Prior art keywords
- silver
- approximately
- copper
- time
- brass wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/438—Post-treatment of the connector
- H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45639—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45644—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
The invention discloses a manufacturing method of a silver-plated bonding copper wire, and aims at overcoming the defects that an existing gold-plated bonding copper wire is high in production cost, low in plating layer hardness and not friction-resistant. A gold-plated layer is replaced by a silver-plated layer so that the silver-plated bonding copper wire with low cost is obtained. Besides, by means of many times of finishing drawing, occurrence of breaking of the copper wire is reduced.
Description
Technical field
The invention belongs to the semiconductor integrated circuit chip encapsulation field, relate in particular to the manufacture method of a kind of semiconductor integrated circuit chip bonding with silver-gilt copper wire.
Background technology
Though the chip of gained had had specific function after the semiconductor integrated circuit manufacturing was finished, realize this function, must by with being connected of exterior electrical components.And semiconductor integrated circuit chip need through with the bond sequence of packaging body, finally obtain Chip Packaging, the pin that so could pass through to encapsulate is connected with exterior electrical components.In the bonding technology of chip and packaging body, all the pad on the chip is electrically connected with the pin of packaging body by bonding line.So bonding line is to realize the requisite material of chip functions.In the prior art, because pure gold electric conductivity excellence, bonding line is many to be made by proof gold.But along with rare day by day, the price of gold resource continues to rise, packaging cost significantly rises.Those skilled in the art develop the product that gold-plated copper wire product substitutes spun gold for this reason.This gold-plated copper wire is by gold-plated formation on the copper core, and this product has been taken into account golden superior electrical conductivity energy, and adopts copper to be used as core body, thereby can reduce the consumption of gold, has saved cost.Yet though gold-plated bonding brass wire is cheap, and is better than spun gold in the performance of aspects such as stretching, shear strength and extension, along with fast compactization, the densification of many pins of chip industry, gold-plated bonding brass wire more and more can't satisfy the demands.Though this is that with respect to gold, its resistivity is higher because the electric conductivity of copper is good, this causes its heat that is produced in the very little Chip Packaging of volume to ignore.Thereby to be necessary to study a kind of be the economy alternative bonding wire of excellent performance again.
And, the manufacture method of silver-plated bonding brass wire generally all is slightly to pull out the directly once smart technology of pulling out moulding in back in the prior art, this technology is owing to only adopt once essence to pull out, copper wire once is drawn into very thin diameter by very big diameter, the process that reduces of diameter is too fierce, therefore causes broken string easily.
Summary of the invention:
The technical problem to be solved in the present invention provides a kind of method of making silver-plated bonding brass wire, to overcome existing gold-plated bonding brass wire production cost height, the low not defective of rub resistance of electrodeposited coating hardness, substitute Gold plated Layer by silver coating, thereby obtain silver-plated cheaply bonding brass wire, and, reduce the appearance of copper wire broken string by smart method of pulling out repeatedly.
The manufacture method of the silver-plated bonding brass wire that the present invention proposes is to be core body with purity greater than high-purity copper wire of 99.9995% on the whole, be coated with the fine silver conductive layer on the surface of this chip, wherein the content of copper core is 91.1 ~ 97.3wt%, the content of fine silver conductive layer is 2.7wt% ~ 8.9wt%, and all the other are copper.
Following mask body is introduced the manufacture method of silver-plated bonding brass wire of the present invention, and it in turn includes the following steps:
The manufacture method of the silver-plated bonding brass wire of the present invention may further comprise the steps sequentially successively:
(1) extract high purity copper: with No. 1 fine copper of national standard is raw material, and dna purity is greater than 99.9995% high purity copper; The high purity copper continuous casting is obtained high-purity copper rod that diameter is approximately 8mm, and the vertical and horizontal number of die of this high-purity copper rod is 1;
(2) the high-purity copper rod that diameter is approximately 8mm slightly pulls out with after making the copper wire that diameter is approximately 3-4mm, and described copper wire is annealed, and annealing temperature is approximately 450-500 degree centigrade, and annealing time is approximately 20-60 minute, carries out water-cooled after the annealing;
(3) preparation of weighing before electroplating: according to weight percent meter, the copper of choosing 91.1 ~ 97.3wt% is as the copper core, and the fine silver of 2.7 ~ 8.9wt% is divided into two parts, wherein first part is 1.5 ~ 6.2wt%, second part is 1.2-2.7wt%, and wherein, the purity of fine silver is greater than 99.99%;
(4) electroplate the fine silver protective layer for the first time: the copper of the 91.1 ~ 97.3wt% by weight percentage after will annealing is electroplated the fine silver of first part of 1.5 ~ 6.2wt% as the copper core on the surface of described copper core;
(5) essence is pulled out for the first time: with the copper wire that is electroplate with the fine silver protective layer of completing steps (4), essence is pulled out into the silver-plated bonding brass wire that diameter is approximately 1-1.5mm;
(6) thermal annealing for the first time: the silver-plated bonding brass wire to completing steps (5) carries out thermal annealing, and wherein the thermal annealing temperature is approximately 450-500 degree centigrade, and the time is approximately 20-60 minute;
(7) electroplate for the second time the fine silver protective layer: the fine silver of on the surface of the bonding brass wire of completing steps (6), electroplating second part of 1.2-2.7wt%;
(8) essence is pulled out for the second time: the silver-plated bonding brass wire essence of completing steps (7) is pulled out into the silver-plated bonding brass wire that diameter is approximately the 15-25 micron;
(9) thermal annealing for the second time: the silver-plated bonding brass wire to completing steps (8) carries out thermal annealing, and wherein the thermal annealing temperature is approximately 450-500 degree centigrade, and the time is approximately 20-60 minute;
(10) clean: the silver-plated bonding brass wire to completing steps (9) carries out surface clean, adopts acid solution earlier it once to be cleaned, and adopts deionized water to carry out secondary cleaning then;
The silver-plated bonding brass wire oven dry that (11) will clean up.
Embodiment:
Be elaborated below by the manufacture method of embodiment to the silver-plated bonding brass wire of the present invention.
Embodiment 1
(1) extract high purity copper: with No. 1 fine copper of national standard is raw material, and dna purity is greater than 99.9995% high purity copper; The high purity copper continuous casting is obtained high-purity copper rod that diameter is approximately 8mm, and the vertical and horizontal number of die of this high-purity copper rod is 1;
(2) the high-purity copper rod that diameter is approximately 8mm slightly pulls out with after making the copper wire that diameter is approximately 3-4mm, and described copper wire is annealed, and annealing temperature is approximately 450-500 degree centigrade, and annealing time is approximately 20-60 minute, carries out water-cooled after the annealing;
(3) preparation of weighing before electroplating: according to weight percent meter, the copper of choosing 91.1 ~ 97.3wt% is as the copper core, and the fine silver of 2.7 ~ 8.9wt% is divided into two parts, wherein first part is 1.5 ~ 6.2wt%, second part is 1.2-2.7wt%, and wherein, the purity of fine silver is greater than 99.99%;
(4) electroplate the fine silver protective layer for the first time: the copper of the 91.1 ~ 97.3wt% by weight percentage after will annealing is electroplated the fine silver of first part of 1.5 ~ 6.2wt% as the copper core on the surface of described copper core;
(5) essence is pulled out for the first time: with the copper wire that is electroplate with the fine silver protective layer of completing steps (4), essence is pulled out into the silver-plated bonding brass wire that diameter is approximately 1-1.5mm;
(6) thermal annealing for the first time: the silver-plated bonding brass wire to completing steps (5) carries out thermal annealing, and wherein the thermal annealing temperature is approximately 450-500 degree centigrade, and the time is approximately 20-60 minute;
(7) electroplate for the second time the fine silver protective layer: the fine silver of on the surface of the bonding brass wire of completing steps (6), electroplating second part of 1.2-2.7wt%;
(8) essence is pulled out for the second time: the silver-plated bonding brass wire essence of completing steps (7) is pulled out into the silver-plated bonding brass wire that diameter is approximately the 15-25 micron;
(9) thermal annealing for the second time: the silver-plated bonding brass wire to completing steps (8) carries out thermal annealing, and wherein the thermal annealing temperature is approximately 450-500 degree centigrade, and the time is approximately 20-60 minute;
(10) clean: the silver-plated bonding brass wire to completing steps (9) carries out surface clean, adopts acid solution earlier it once to be cleaned, and adopts deionized water to carry out secondary cleaning then;
The silver-plated bonding brass wire oven dry that (11) will clean up.
Embodiment 2
Introduce the optimum embodiment of the manufacture method of the silver-plated bonding brass wire that the present invention proposes below, described method may further comprise the steps sequentially successively:
(1) extract high purity copper: with No. 1 fine copper of national standard is raw material, and dna purity is greater than 99.9995% high purity copper; The high purity copper continuous casting is obtained high-purity copper rod that diameter is approximately 8mm, and the vertical and horizontal number of die of this high-purity copper rod is 1;
(2) the high-purity copper rod that diameter is approximately 8mm slightly pulls out with after making the copper wire that diameter is approximately 3-4mm, and described copper wire is annealed, and annealing temperature is approximately 450-500 degree centigrade, and annealing time is approximately 20-60 minute, carries out water-cooled after the annealing;
(3) preparation of weighing before electroplating: according to weight percent meter, the copper of choosing 91.1 ~ 97.3wt% is as the copper core, and the fine silver of 2.7 ~ 8.9wt% is divided into two parts, wherein first part is 1.5 ~ 6.2wt%, second part is 1.2-2.7wt%, and wherein, the purity of fine silver is greater than 99.99%;
(4) electroplate the fine silver protective layer for the first time: the copper of the 91.1 ~ 97.3wt% by weight percentage after will annealing is electroplated the fine silver of first part of 1.5 ~ 6.2wt% as the copper core on the surface of described copper core;
(5) essence is pulled out for the first time: with the copper wire that is electroplate with the fine silver protective layer of completing steps (4), essence is pulled out into the silver-plated bonding brass wire that diameter is approximately 1mm;
(6) thermal annealing for the first time: the silver-plated bonding brass wire to completing steps (5) carries out thermal annealing, and wherein the thermal annealing temperature is approximately 480 degrees centigrade, and the time is approximately 30 minutes;
(7) electroplate for the second time the fine silver protective layer: the fine silver of on the surface of the bonding brass wire of completing steps (6), electroplating second part of 1.2-2.7wt%;
(8) essence is pulled out for the second time: the silver-plated bonding brass wire essence of completing steps (7) is pulled out into the silver-plated bonding brass wire that diameter is approximately 18 microns;
(9) thermal annealing for the second time: the silver-plated bonding brass wire to completing steps (8) carries out thermal annealing, and wherein the thermal annealing temperature is approximately 480 degrees centigrade, and the time is approximately 30 minutes;
(10) clean: the silver-plated bonding brass wire to completing steps (9) carries out surface clean, adopts acid solution earlier it once to be cleaned, and adopts deionized water to carry out secondary cleaning then;
The silver-plated bonding brass wire oven dry that (11) will clean up.
The manufacture method of the silver-plated bonding brass wire of the present invention adopts and slightly pulls out-platings-first time, smart pulling out-platings-second time, essence was pulled out for the second time for the first time technology, thus make the material of plated silver finish even more, densification, silver coating bond strength significantly improve.And the technology of pulling out by twice essence, make and in the drawing process of copper wire, be tapered, avoided in drawing process, because from once being drawn into than major diameter (as 8mm of the present invention) the process of fine diameter (as 15-25 micron of the present invention), make easily and the problem that copper wire is broken therefore can reduce loss unnecessary in the production process.
Above execution mode is described in detail the present invention, but above-mentioned execution mode is not in order to limit scope of the present invention, and protection scope of the present invention is defined by the appended claims.
Claims (3)
1. the manufacture method of a silver-plated bonding brass wire may further comprise the steps sequentially successively:
(1) extract high purity copper: with No. 1 fine copper of national standard is raw material, and dna purity is greater than 99.9995% high purity copper; The high purity copper continuous casting is obtained high-purity copper rod that diameter is approximately 8mm, and the vertical and horizontal number of die of this high-purity copper rod is 1;
(2) the high-purity copper rod that diameter is approximately 8mm slightly pulls out with after making the copper wire that diameter is approximately 3-4mm, and described copper wire is annealed, and annealing temperature is approximately 450-500 degree centigrade, and annealing time is approximately 20-60 minute, carries out water-cooled after the annealing;
(3) preparation of weighing before electroplating: according to weight percent meter, the copper of choosing 91.1 ~ 97.3wt% is as the copper core, and the fine silver of 2.7 ~ 8.9wt% is divided into two parts, wherein first part is 1.5 ~ 6.2wt%, second part is 1.2-2.7wt%, and wherein, the purity of fine silver is greater than 99.99%;
(4) electroplate the fine silver protective layer for the first time: the copper of the 91.1 ~ 97.3wt% by weight percentage after will annealing is electroplated the fine silver of 1.5 ~ 6.2wt% as the copper core on the surface of described copper core;
(5) essence is pulled out for the first time: with the copper wire that is electroplate with the fine silver protective layer of completing steps (4), essence is pulled out into the silver-plated bonding brass wire that diameter is approximately 1-1.5mm;
(6) thermal annealing for the first time: the silver-plated bonding brass wire to completing steps (5) carries out thermal annealing, and wherein the thermal annealing temperature is approximately 450-500 degree centigrade, and the time is approximately 20-60 minute;
(7) electroplate for the second time the fine silver protective layer: the fine silver of on the surface of the bonding brass wire of completing steps (6), electroplating 1.2-2.7wt%;
(8) essence is pulled out for the second time: the silver-plated bonding brass wire essence of completing steps (7) is pulled out into the silver-plated bonding brass wire that diameter is approximately the 15-25 micron;
(9) thermal annealing for the second time: the silver-plated bonding brass wire to completing steps (8) carries out thermal annealing, and wherein the thermal annealing temperature is approximately 450-500 degree centigrade, and the time is approximately 20-60 minute;
(10) clean: the silver-plated bonding brass wire to completing steps (9) carries out surface clean, adopts acid solution earlier it once to be cleaned, and adopts deionized water to carry out secondary cleaning then;
The silver-plated bonding brass wire oven dry that (11) will clean up.
2. the manufacture method of silver-plated bonding brass wire as claimed in claim 1 is characterized in that:
In the described step (5), silver-plated bonding brass wire is pulled out into diameter by essence and is approximately 1mm.
3. the manufacture method of silver-plated bonding brass wire as claimed in claim 1 is characterized in that:
Described first time thermal annealing and described second time thermal annealing the thermal annealing temperature be approximately 480 degrees centigrade, the time is approximately 30 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310065492.8A CN103219247B (en) | 2013-03-01 | 2013-03-01 | A kind of manufacture method of silver plated bonding copper wire |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310065492.8A CN103219247B (en) | 2013-03-01 | 2013-03-01 | A kind of manufacture method of silver plated bonding copper wire |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103219247A true CN103219247A (en) | 2013-07-24 |
| CN103219247B CN103219247B (en) | 2015-11-25 |
Family
ID=48816932
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310065492.8A Expired - Fee Related CN103219247B (en) | 2013-03-01 | 2013-03-01 | A kind of manufacture method of silver plated bonding copper wire |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103219247B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2913424A1 (en) * | 2014-02-28 | 2015-09-02 | Aumann GMBH | Method for forming a precious metal coating on a metallic substrate, and coating assembly |
| CN107030127A (en) * | 2017-05-27 | 2017-08-11 | 京仪股份有限公司 | A kind of copper bar drawing process |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101386930A (en) * | 2007-09-15 | 2009-03-18 | 山东华宏微电子材料科技有限公司 | Method of preparing linking copper wire |
| US20090188696A1 (en) * | 2005-01-05 | 2009-07-30 | Tomohiro Uno | Bonding wire for semiconductor device |
| CN101569968A (en) * | 2008-05-04 | 2009-11-04 | 李俊德 | Silver alloy bonding wire for packing wires and manufacturing method thereof |
| CN101707194A (en) * | 2009-11-11 | 2010-05-12 | 宁波康强电子股份有限公司 | Palladium-plated bonded copper wire and production method thereof |
| TW201037777A (en) * | 2009-01-27 | 2010-10-16 | Tatsuta System Electronics Co Ltd | Bonding wire |
| TW201207129A (en) * | 2010-08-05 | 2012-02-16 | jin-yong Wang | Cooper bonding wire used in encapsulation and manufacturing method thereof |
-
2013
- 2013-03-01 CN CN201310065492.8A patent/CN103219247B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090188696A1 (en) * | 2005-01-05 | 2009-07-30 | Tomohiro Uno | Bonding wire for semiconductor device |
| CN101386930A (en) * | 2007-09-15 | 2009-03-18 | 山东华宏微电子材料科技有限公司 | Method of preparing linking copper wire |
| CN101569968A (en) * | 2008-05-04 | 2009-11-04 | 李俊德 | Silver alloy bonding wire for packing wires and manufacturing method thereof |
| TW201037777A (en) * | 2009-01-27 | 2010-10-16 | Tatsuta System Electronics Co Ltd | Bonding wire |
| CN101707194A (en) * | 2009-11-11 | 2010-05-12 | 宁波康强电子股份有限公司 | Palladium-plated bonded copper wire and production method thereof |
| TW201207129A (en) * | 2010-08-05 | 2012-02-16 | jin-yong Wang | Cooper bonding wire used in encapsulation and manufacturing method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2913424A1 (en) * | 2014-02-28 | 2015-09-02 | Aumann GMBH | Method for forming a precious metal coating on a metallic substrate, and coating assembly |
| CN107030127A (en) * | 2017-05-27 | 2017-08-11 | 京仪股份有限公司 | A kind of copper bar drawing process |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103219247B (en) | 2015-11-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101707194B (en) | production method of palladium-plated bonded copper wire | |
| CN103219246B (en) | A kind of manufacture method of plating the silver-plated two coating bonding brass wires of palladium | |
| CN103219249B (en) | A kind of manufacture method of plating the gold-plated two coating bonding brass wires of palladium | |
| CN101667566B (en) | Gold-coated-sliver base bonding silk thread and manufacture method thereof | |
| CN101314832B (en) | Iron alloy material, semiconductor lead frame made of iron alloy material and method of manufacturing the same | |
| CN103219312B (en) | A kind ofly plate the gold-plated two coating bonding brass wires of palladium | |
| CN106086962A (en) | A kind of production technology encapsulated with gold-plated palladium linking copper wire | |
| CN103779308A (en) | Gold-silver-palladium alloy single-crystal bonding wire and manufacturing method thereof | |
| CN109628793A (en) | A kind of copper plating palladium nickel plating gold-plated bonding wire and preparation method thereof again | |
| CN105428335A (en) | Bonding wire | |
| CN104377185A (en) | Gold-plated palladium-silver alloy single crystal bonding wire and manufacturing method thereof | |
| CN103779309A (en) | Gold-plating gold and silver palladium alloy single-crystal bonding filament and manufacturing method thereof | |
| CN106992164A (en) | A kind of microelectronics Packaging copper alloy monocrystal bonding wire and preparation method thereof | |
| CN103219247B (en) | A kind of manufacture method of silver plated bonding copper wire | |
| CN107904434A (en) | A kind of ultra-fine super long copper B alloy wire and its production method | |
| CN103219245B (en) | A kind of manufacture method of palladium-plated bonded copper wire | |
| CN103560120B (en) | A kind of chemical method plating palladium copper bonding wire and preparation method thereof | |
| CN103219311B (en) | A kind ofly plate the silver-plated two coating bonding brass wires of palladium | |
| CN103556140A (en) | Palladium plating liquid for chemically preparing palladium-plated copper bonding wire | |
| CN109628790A (en) | A kind of high-purity gold and silver pallas bonding wire and preparation method thereof | |
| CN103219248B (en) | A kind of manufacture method of gold plating linking copper wire | |
| CN106244844A (en) | A kind of copper cash of quasiconductor and preparation method thereof | |
| CN101621003A (en) | Novel production process of high-pressure diode | |
| CN104299954A (en) | Copper wire for semiconductor welding | |
| CN104022095A (en) | Gold-plated silver lanthanum calcium alloy bonding wire and manufacture method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20151125 Termination date: 20160301 |