CN103556140A - Palladium plating liquid for chemically preparing palladium-plated copper bonding wire - Google Patents
Palladium plating liquid for chemically preparing palladium-plated copper bonding wire Download PDFInfo
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- CN103556140A CN103556140A CN201310559432.1A CN201310559432A CN103556140A CN 103556140 A CN103556140 A CN 103556140A CN 201310559432 A CN201310559432 A CN 201310559432A CN 103556140 A CN103556140 A CN 103556140A
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- palladium
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Abstract
The invention discloses a palladium plating liquid for chemically preparing a palladium-plated copper bonding wire. The palladium plating liquid comprises the following components: PdCl, NaH2PO2, NH4OH and NH4Cl, wherein the concentration of the PdCl is 6-27g/L, the concentration of the NaH2PO2 is 10-20g/L, the concentration of the NH4OH is 100-160ml/L and the concentration of the NH4Cl is 10-60g/L. The produced bonding wire subjected to chemical palladium plating by adopting the palladium plating liquid disclosed by the invention is very good and stable in performance and can meet the requirements on wire performance quality in high-end packaging fields.
Description
Technical field
The present invention relates to metallic bond plying field, relate in particular to a kind of plating palladium liquid for chemical method preparation plating palladium copper bonding wire.
Background technology
In recent years along with price of gold is constantly soaring, the cost of encapsulation field is more and more higher, plating palladium copper bonding wire replaces spun gold to reach its maturity at present, but current domestic plating palladium copper wire can only be applied in low side encapsulation, and high-end encapsulation is still monopolized by external plating palladium copper wire, and at present the plating palladium method overwhelming majority is in the world plated palladium for electrochemistry, and technique is loaded down with trivial details, cost is large, pollutes large.
Summary of the invention
Object of the present invention is exactly the problem existing for prior art, a kind of plating palladium liquid for chemical method preparation plating palladium copper bonding wire is provided, the plating palladium copper bonding wire performance that adopts this plating palladium liquid to prepare is outstanding, and safe production process, energy-saving and environmental protection, simple, improved the production efficiency of silk material largely.
Above-mentioned purpose realizes by following proposal:
A kind of plating palladium liquid for chemical method preparation plating palladium copper bonding wire, it is characterized in that, the concentration that the concentration of giving composition in described plating palladium liquid is PdCl is that the concentration of 6～27g/L, NaH2PO2 is that the concentration of 10～20g/L, NH4OH is that the concentration of 100～160ml/L, NH4C1 is 10～60g/L.
Plating palladium liquid according to above-mentioned, is characterized in that, the concentration of described PdCl is 6.67～27.67g/L.
Beneficial effect of the present invention: adopt plating palladium liquid para-linkage silk of the present invention to carry out chemical palladium plating solution, its silk wood property of producing can be very good, stable, can meet the requirement of high-end encapsulation field to silk material performance quality.
Embodiment
Below in conjunction with plating palladium process, plating palladium liquid of the present invention is described in detail.
Embodiment 1
(1) founding and wire drawing: in fusion-casting process, add 0.003% phosphorus and 0.003% manganese, type of heating adopts heating in medium frequency, continuous casting mode adopts down draws formula vacuum continuous casting, and controls founding and drawing condition is: casting temperature is 1100 ℃, vacuum tightness 1.0*10
-5mpa, refining time 20 minutes, casting speed 150mm/min, the copper base diameter of formation is 4mm, drawing speed is 70m/min;
(2) chemical palladium-plating: copper bonding wire finished product single plating palladium liquid of putting into after annealing is carried out to chemical palladium-plating, plating palladium liquid, plating palladium liquid composition is 6g/L PdCl, 10g/L NaH2PO2,100ml/L NH4OH, 10g/L NH4Cl, the pH value of plating palladium liquid is controlled near 9.5, and the temperature of plating palladium liquid is controlled at 40 degrees Celsius; The bag palladium liquid using in chemical reduction palladium method is weakly alkaline, after using, is neutral, comparatively environmental protection.After the plating of finished product chemical palladium-plating method, palladium layer is even, and palladium layer thickness is controlled.Traditional technology is when work in-process, to plate palladium in addition, and to add man-hour mould consumption very big in a silk material hardening ，Hou road like this, and the chemical palladium-plating method of this patent can farthest reduce mould consumption, saving resource.
(3) annealing: the characteristic (CuO+CH that utilizes dehydrated alcohol reductive copper oxide
3cH
2oH-CH
3cHO+Cu+H
2o), with nitrogen, add dehydrated alcohol and replace nitrogen and hydrogen mixture to carry out Annealing Protection, than hydrogen reducing safety; Annealing temperature is 250 ℃;
(4) clean: utilize dehydrated alcohol, when high temperature evaporation, explosive power is destroyed the foul on silk; Utilize dehydrated alcohol quick-fried power when high temperature evaporation to destroy the dirt on silk, replace the step of washed with de-ionized water, can the amount of conserving water, water saving.
(5) bonding wire after cleaning is carried out to after-combustion.Chemical palladium-plating, annealing, cleaning and after-combustion one complete, and plating palladium annealing after-combustion speed is 50 meters of per minutes.
Embodiment 2
(1) founding and wire drawing: in fusion-casting process, add 0.04% phosphorus and 0.01% manganese, type of heating adopts heating in medium frequency, and continuous casting mode adopts down draws formula vacuum continuous casting, and control founding and drawing condition is: casting temperature is 1300 ℃, vacuum tightness 1.0*10
-5mpa, refining time 40 minutes, casting speed 300mm per minute, the copper base diameter of formation is 10mm, drawing speed is 120m/min;
(2) chemical palladium-plating: copper bonding wire finished product single plating palladium liquid of putting into after annealing is carried out to chemical palladium-plating, plating palladium liquid composition is 6.67g/LPdCl (corresponding palladium ion concentration is 5 grams every liter), 10g/LNaH2PO2,100ml/LNH4OH, 10g/LNH4Cl, the pH value of plating palladium liquid is controlled near 9.5, and the temperature of plating palladium liquid is controlled at 40 degrees Celsius; The bag palladium liquid using in chemical reduction palladium method is weakly alkaline, after using, is neutral, comparatively environmental protection.After the plating of finished product chemical palladium-plating method, palladium layer is even, and palladium layer thickness is controlled.Traditional technology is when work in-process, to plate palladium in addition, and to add man-hour mould consumption very big in a silk material hardening ，Hou road like this, and the chemical palladium-plating method of this patent can farthest reduce mould consumption, saving resource.
(3) annealing: the characteristic (CuO+CH that utilizes dehydrated alcohol reductive copper oxide
3cH
2oH-CH
3cHO+Cu+H
2o), with nitrogen, add dehydrated alcohol and replace nitrogen and hydrogen mixture to carry out Annealing Protection, than hydrogen reducing safety; Annealing temperature is 500 ℃;
(4) clean: utilize dehydrated alcohol explosive power when high temperature evaporation to destroy the foul on silk; Utilize dehydrated alcohol quick-fried power when high temperature evaporation to destroy the dirt on silk, replace the step of washed with de-ionized water, can the amount of conserving water, water saving.
(5) bonding wire after cleaning is carried out to after-combustion.Chemical palladium-plating, annealing, cleaning and after-combustion one complete, and plating palladium annealing after-combustion speed is 50 meters of per minutes.
Embodiment 3
(1) founding and wire drawing: in fusion-casting process, add 0.04% phosphorus and 0.01% manganese, type of heating adopts heating in medium frequency, and continuous casting mode adopts down draws formula vacuum continuous casting, and control founding and drawing condition is: casting temperature is 1300 ℃, vacuum tightness 1.0*10
-5mpa, refining time 40 minutes, casting speed 300mm per minute, the copper base diameter of formation is 10mm, drawing speed is 120m/min;
(2) chemical palladium-plating: copper bonding wire finished product single plating palladium liquid of putting into after annealing is carried out to chemical palladium-plating, plating palladium liquid composition is 26.67g/L PdCl (corresponding palladium ion concentration is 20 grams every liter), 20g/L NaH2PO2,160ml/L NH4OH, 60g/L NH4Cl, the pH value of plating palladium liquid is controlled near 10.3, and the temperature of plating palladium liquid is controlled at 60 degrees Celsius; The plating palladium liquid using in chemical reduction palladium method is weakly alkaline, after using, is neutral, comparatively environmental protection.After the plating of finished product chemical palladium-plating method, palladium layer is even, and palladium layer thickness is controlled.Traditional technology is when work in-process, to plate palladium in addition, and to add man-hour mould consumption very big in a silk material hardening ，Hou road like this, and the chemical palladium-plating method of this patent can farthest reduce mould consumption, saving resource.
(3) annealing: the characteristic (CuO+CH that utilizes dehydrated alcohol reductive copper oxide
3cH
2oH-CH
3cHO+Cu+H
2o), with nitrogen, add dehydrated alcohol and replace nitrogen and hydrogen mixture to carry out Annealing Protection, than hydrogen reducing safety; Annealing temperature is 500 ℃;
(4) clean: utilize dehydrated alcohol explosive power when high temperature evaporation to destroy the foul on silk; Utilize dehydrated alcohol quick-fried power when high temperature evaporation to destroy the dirt on silk, replace the step of washed with de-ionized water, can the amount of conserving water, water saving.
(5) bonding wire after cleaning is carried out to after-combustion.Chemical palladium-plating, annealing, cleaning and after-combustion one complete, and plating palladium annealing after-combustion speed is 50 meters of per minutes.
Claims (2)
1. the plating palladium liquid for chemical method preparation plating palladium copper bonding wire, it is characterized in that, the concentration that the concentration of giving composition in described plating palladium liquid is PdCl is that the concentration of 6～27g/L, NaH2PO2 is that the concentration of 10～20g/L, NH4OH is that the concentration of 100～160ml/L, NH4Cl is 10～60g/L.
2. plating palladium liquid according to claim 1, is characterized in that, the concentration of described PdCl is 6.67～27.67g/L.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310559432.1A CN103556140A (en) | 2013-11-13 | 2013-11-13 | Palladium plating liquid for chemically preparing palladium-plated copper bonding wire |
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|---|---|---|---|
| CN201310559432.1A CN103556140A (en) | 2013-11-13 | 2013-11-13 | Palladium plating liquid for chemically preparing palladium-plated copper bonding wire |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104561958A (en) * | 2014-12-31 | 2015-04-29 | 北京达博有色金属焊料有限责任公司 | Gold-plated palladium solution for preparing chemical gold-plated palladium bonded silver alloy wire |
| CN104674201A (en) * | 2015-02-11 | 2015-06-03 | 江苏澳光电子有限公司 | Chemical palladium-plating liquid for plating metal palladium plating layer on metal surface |
| CN105296974A (en) * | 2015-08-27 | 2016-02-03 | 中国科学院兰州化学物理研究所 | Palladium plating liquid and method for plating palladium on copper surface by using same |
| CN109136893A (en) * | 2018-09-20 | 2019-01-04 | 中国工程物理研究院材料研究所 | A kind of palladium-niobium-palladium-based composite membrane chemically plating Preparation Method |
| CN112609173A (en) * | 2020-12-10 | 2021-04-06 | 安徽环瑞电热器材有限公司 | Corrosion-resistant material and manufacturing method thereof |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1354690A (en) * | 1999-04-07 | 2002-06-19 | Basf公司 | Method for producing platinum metal catalysts |
| CN101525744A (en) * | 2009-04-27 | 2009-09-09 | 深圳市成功化工有限公司 | Superficial treatment method of printed wiring board |
| CN101695664A (en) * | 2009-10-26 | 2010-04-21 | 广东工业大学 | Palladium-based metal carrier catalyst, preparation method and application thereof |
| CN101709462A (en) * | 2009-12-23 | 2010-05-19 | 长沙理工大学 | Chemical palladium plating solution |
| CN201796880U (en) * | 2010-04-07 | 2011-04-13 | 袁毅 | Semi-conductor package |
| CN102179256A (en) * | 2011-03-17 | 2011-09-14 | 广东工业大学 | Preparation method and use of palladium-based cellular integrated combustion catalyst |
| CN102449192A (en) * | 2009-05-08 | 2012-05-09 | 小岛化学药品株式会社 | Electroless palladium plating solution |
| JP2013108170A (en) * | 2011-11-21 | 2013-06-06 | Samsung Electro-Mechanics Co Ltd | Electroless palladium plating solution |
| CN103178003A (en) * | 2013-03-27 | 2013-06-26 | 中国航天科技集团公司第九研究院第七七一研究所 | Gold wire bonding interconnection method based on nickel-palladium-gold coating layer |
-
2013
- 2013-11-13 CN CN201310559432.1A patent/CN103556140A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1354690A (en) * | 1999-04-07 | 2002-06-19 | Basf公司 | Method for producing platinum metal catalysts |
| CN101525744A (en) * | 2009-04-27 | 2009-09-09 | 深圳市成功化工有限公司 | Superficial treatment method of printed wiring board |
| CN102449192A (en) * | 2009-05-08 | 2012-05-09 | 小岛化学药品株式会社 | Electroless palladium plating solution |
| CN101695664A (en) * | 2009-10-26 | 2010-04-21 | 广东工业大学 | Palladium-based metal carrier catalyst, preparation method and application thereof |
| CN101709462A (en) * | 2009-12-23 | 2010-05-19 | 长沙理工大学 | Chemical palladium plating solution |
| CN201796880U (en) * | 2010-04-07 | 2011-04-13 | 袁毅 | Semi-conductor package |
| CN102179256A (en) * | 2011-03-17 | 2011-09-14 | 广东工业大学 | Preparation method and use of palladium-based cellular integrated combustion catalyst |
| JP2013108170A (en) * | 2011-11-21 | 2013-06-06 | Samsung Electro-Mechanics Co Ltd | Electroless palladium plating solution |
| CN103178003A (en) * | 2013-03-27 | 2013-06-26 | 中国航天科技集团公司第九研究院第七七一研究所 | Gold wire bonding interconnection method based on nickel-palladium-gold coating layer |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104561958A (en) * | 2014-12-31 | 2015-04-29 | 北京达博有色金属焊料有限责任公司 | Gold-plated palladium solution for preparing chemical gold-plated palladium bonded silver alloy wire |
| CN104674201A (en) * | 2015-02-11 | 2015-06-03 | 江苏澳光电子有限公司 | Chemical palladium-plating liquid for plating metal palladium plating layer on metal surface |
| CN105296974A (en) * | 2015-08-27 | 2016-02-03 | 中国科学院兰州化学物理研究所 | Palladium plating liquid and method for plating palladium on copper surface by using same |
| CN109136893A (en) * | 2018-09-20 | 2019-01-04 | 中国工程物理研究院材料研究所 | A kind of palladium-niobium-palladium-based composite membrane chemically plating Preparation Method |
| CN112609173A (en) * | 2020-12-10 | 2021-04-06 | 安徽环瑞电热器材有限公司 | Corrosion-resistant material and manufacturing method thereof |
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Application publication date: 20140205 |