CN201893333U - Novel integrated circuit frame structure - Google Patents
Novel integrated circuit frame structure Download PDFInfo
- Publication number
- CN201893333U CN201893333U CN 201020636210 CN201020636210U CN201893333U CN 201893333 U CN201893333 U CN 201893333U CN 201020636210 CN201020636210 CN 201020636210 CN 201020636210 U CN201020636210 U CN 201020636210U CN 201893333 U CN201893333 U CN 201893333U
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- CN
- China
- Prior art keywords
- silver
- silver layer
- washing
- layer
- integrated circuit
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Electroplating Methods And Accessories (AREA)
Abstract
The utility model discloses an integrated circuit frame structure, which comprises a main frame body, wherein a silver electroplating layer is arranged on the main frame body, a silver layer protecting film is arranged on the silver electroplating layer, and the silver layer protecting film is a nano-film layer to improve the antioxidant capacity of the silver layer of a lead frame. Nano particles are filed in gaps formed by electroplating, so that the silver layer is denser to improve the antioxidant capacity of the silver layer; the densification of the silver layer is improved, the thickness of the silver layer is reduced without affecting the densification of the silver layer, and the thickness of the silver is reduced to 1.5-5mu m from 3-7mum; and the production cost is reduced, and the electrical property requirements of the lead frame can be met.
Description
Technical field
The utility model discloses a kind of integrated circuit frame structure, divides by International Patent Classification (IPC) (IPC) to belong to semiconductor lead frame manufacturing technology field, especially relates to a kind of QFN integrated circuit belfry.
Background technology
Circuit lead frame is the basic element of character of making the IC semiconductor element, in actual applications also need be at encapsulation region electroplating surface silver layer, utilize plastic packaging to encapsulate again and be fixed into the semiconductor original paper, circuit lead frame comprises universal models QFN and QFP etc., wherein QFN is one of surface attaching type encapsulation, encapsulates four sides and disposes electrode contacts, because no pin, it is littler than QFP to mount occupied area, and aspect ratio QFP is low.
The electro-plating method of existing QFN integrated circuit framework generally is to realize by following technology: electrochemical deoiling → electrolytic degreasing → washing → washing → pickling → washing → pickling → washing → washing → washing → copper facing → washing → washing → washing → anti-displacement → washing → washing → selection is silver-plated → silver recovery → washing → washing → strip → washing → washing → neutralization → washing → washing → prevent copper oxidation → washing → washing → washing → oven dry, there is the easy oxidation of silver layer in the framework that this technological process is electroplated, jaundice, long macula lutea problem, influence client's bonding wire, plastic packaging, the silver thickness of this electroplating technology flow process plating is thick relatively simultaneously, general silver thickness is 3um-7um, the production cost height.
The present invention creates a novel lead wire frame structure, so just the utility model proposes through long-term practice and in conjunction with being engaged in framework plating experience for many years.
Summary of the invention
At the deficiencies in the prior art, the utility model provides a kind of rational in infrastructure, new type integrated circuit frame structure of improving lead frame silver layer oxidation resistance, effectively improve silver layer jaundice, long macula lutea problem, do not influence framework simultaneously and use under the prerequisite, reduce production costs.
For achieving the above object, the utility model is achieved through the following technical solutions:
A kind of new type integrated circuit frame structure comprises chassis body, and a plurality of silver-plated zones are arranged on it, and each silver-plated district is positioned at the corresponding encapsulation region of chassis body, and wherein: the silver layer in described each silver-plated district is provided with the silver layer diaphragm.
Further, described silver layer diaphragm is the nanometer rete, to improve the oxidation resistance of lead frame silver layer.
Further, described nanometer film layer thickness is 3-10nm.
Further, silver thickness is 1.5um-5um in the described silver-plated zone, because nano particle is filled the oxidation resistance that makes the fine and close more enhancing silver layer of silver layer to electroplating the space that forms: silver layer compactness improves the thickness that can reduce silver layer under the condition that does not influence, silver thickness is reduced to 1.5-5um from 3-7um, reduces production costs.
Nanometer protective film on the utility model silver layer is after soaking nanometer plating liquid medicine; silver layer surface can form the silver layer diaphragm; this diaphragm can improve the oxidation resistance of lead frame silver layer, and silver thickness is reduced to 1.5-5um from 3-7um simultaneously, reduces production costs.
The utlity model has following useful effect:
1, the utility model is owing to be provided with the nanometer protective film on silver layer, and to strengthen the oxidation resistance of silver layer, silver layer turns to be yellow, long macula lutea problem thereby effectively improve;
2, under the prerequisite that the utility model silver layer compactness improves, silver thickness is reduced to 1.5-5um from 3-7um, and this silver layer that reduces production costs can reach the requirement on electric performance of lead frame.
Description of drawings
Fig. 1 is the utility model front view.
Fig. 2 is the utility model end view.
Fig. 3 is the utility model partial elevation view.
Fig. 4 is a silver-plated district enlarged drawing among Fig. 3.
Embodiment
The utility model is described in further detail below in conjunction with accompanying drawing:
Embodiment: see also Fig. 1, Fig. 2, Fig. 3 and Fig. 4; a kind of new type integrated circuit frame structure; comprise chassis body 1; have a plurality of silver-plated regional 21 on it; each silver-plated district is positioned at the corresponding encapsulation region 2 of chassis body; the edge of encapsulation region is a packaging line 20; silver layer in described silver-plated regional 21 is provided with the silver layer diaphragm; this silver layer diaphragm is the nanometer rete; to improve the oxidation resistance of lead frame silver layer; described nanometer film layer thickness is 3-10nm, and being preferably the nanometer film layer thickness is about 5nm.
The utility model is because nano particle is filled the oxidation resistance that makes the fine and close more enhancing silver layer of silver layer to electroplating the space that forms: silver layer compactness improves the thickness that can reduce silver layer under the condition that does not influence, silver thickness is reduced to 1.5-5um from 3-7um, reduces production costs.
The utility model circuit lead frame implementation realizes by following technology: electrochemical deoiling → electrolytic degreasing → washing → washing → pickling → washing → pickling → washing → washing → washing → copper facing → washing → washing → washing → anti-displacement → washing → washing → selection is silver-plated → and silver recovery → washing → washing → strip → washing → washing → neutralization → washing → washing → anti-copper oxidation → washing → washing → immersion nanometer plating liquid medicine → washing → hot water wash → washing → oven dry formation framework, above-mentioned anti-copper oxidation can replace with washing process, and further saves cost.After soaking nanometer plating liquid medicine; silver layer surface can form the silver layer diaphragm; improve the oxidation resistance of lead frame silver layer; nano particle is filled the oxidation resistance that makes the fine and close more enhancing silver layer of silver layer to electroplating the space that forms simultaneously: silver layer compactness improves the thickness that can reduce silver layer under the condition that does not influence; silver thickness is reduced to 1.5-5um from 3-7um, reduces production costs.
It is that the inventor buys gained in market that the nanometer of using in the above-mentioned technology is electroplated liquid medicine.
The above record only for utilizing the embodiment of this origination techniques content, anyly is familiar with modification, the variation that this skill person uses this creation to do, and all belongs to the claim of this creation opinion, and is not limited to those disclosed embodiments.
Claims (4)
1. a new type integrated circuit frame structure comprises chassis body, and a plurality of silver-plated zones are arranged on it, and it is characterized in that: the silver layer in described each silver-plated district is provided with the silver layer diaphragm.
2. new type integrated circuit frame structure according to claim 1 is characterized in that: described silver layer diaphragm is that the nanometer rete is to improve the oxidation resistance of lead frame silver layer.
3. new type integrated circuit frame structure according to claim 2 is characterized in that: described nanometer film layer thickness is 3-10nm.
4. new type integrated circuit frame structure according to claim 1 is characterized in that: silver thickness is 1.5um-5um in the described silver-plated zone.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201020636210 CN201893333U (en) | 2010-12-01 | 2010-12-01 | Novel integrated circuit frame structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201020636210 CN201893333U (en) | 2010-12-01 | 2010-12-01 | Novel integrated circuit frame structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201893333U true CN201893333U (en) | 2011-07-06 |
Family
ID=44222803
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201020636210 Expired - Lifetime CN201893333U (en) | 2010-12-01 | 2010-12-01 | Novel integrated circuit frame structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201893333U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709267A (en) * | 2012-05-23 | 2012-10-03 | 顺德工业(江苏)有限公司 | Lead frame in semiconductor |
| CN106400070A (en) * | 2016-11-03 | 2017-02-15 | 宁波埃斯科光电有限公司 | Electroplating method for partial silver-plating for iron substrate lead frame |
| CN109390241A (en) * | 2018-09-10 | 2019-02-26 | 浩明科技（中山）有限公司 | A kind of silicon-controlled packaging method |
-
2010
- 2010-12-01 CN CN 201020636210 patent/CN201893333U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709267A (en) * | 2012-05-23 | 2012-10-03 | 顺德工业(江苏)有限公司 | Lead frame in semiconductor |
| CN106400070A (en) * | 2016-11-03 | 2017-02-15 | 宁波埃斯科光电有限公司 | Electroplating method for partial silver-plating for iron substrate lead frame |
| CN109390241A (en) * | 2018-09-10 | 2019-02-26 | 浩明科技（中山）有限公司 | A kind of silicon-controlled packaging method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C53 | Correction of patent for invention or patent application | ||
| CB03 | Change of inventor or designer information |
Inventor after: Long Hairong Inventor after: Lin Guixian Inventor after: Wang Fengtao Inventor after: Peng Xia Inventor after: Chen Zhongxian Inventor before: Long Hairong Inventor before: Lin Guixian Inventor before: Wang Fengtao Inventor before: Peng Xia Inventor before: Chen Zhongxian |
|
| CX01 | Expiry of patent term |
Granted publication date: 20110706 |
|
| CX01 | Expiry of patent term |