CN204315568U - A kind of IC encapsulates carrier band - Google Patents
A kind of IC encapsulates carrier band Download PDFInfo
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- CN204315568U CN204315568U CN201420829182.9U CN201420829182U CN204315568U CN 204315568 U CN204315568 U CN 204315568U CN 201420829182 U CN201420829182 U CN 201420829182U CN 204315568 U CN204315568 U CN 204315568U
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Abstract
A kind of IC encapsulates carrier band, belongs to IC-card encapsulation carrier band technical field.Comprise base material (1), it is characterized in that: base material (1) top is by being attached with copper foil layer (4), contact-making surface semi-bright nickel layer (3), the pre-Gold plated Layer of contact-making surface (2) from down to up successively; Base material (1) has welding welding hole (101), by being filled with pressure welding face semi-bright nickel layer (5), the pre-Gold plated Layer in pressure welding face (6), welding soft gold layer (7) from down to up successively in welding hole (101).IC of the present utility model encapsulates carrier band contact-making surface and adopts brand-new semi-bright nickel to add coating structure gold-plated in advance to replace traditional coating structure; this coating structure does not electroplate the hard gold/soft gold of protection; while effectively reducing costs; can ensure that it possesses good corrosion resistant ability and abrasive resistance, reduce the use of precious metal.
Description
Technical field
A kind of IC encapsulates carrier band, belongs to IC-card encapsulation carrier band technical field.
Background technology
IC-card encapsulation carrier band refers to the crucial special basic material of one for integrated circuit card module encapsulation, mainly plays protect IC and as the effect of integrated circuit (IC) chip and extraneous interface, its form be banded, is generally golden yellow.Concrete use procedure is as follows: be first attached to above IC-card encapsulation carrier band by full-automatic chip mounter by IC card chip, then the node above the contact above integrated circuit (IC) chip and IC-card encapsulation carrier band coupled together the UNICOM of realizing circuit with bonding equipment, finally use encapsulating material that integrated circuit (IC) chip is protected formation integrated circuit card module, be convenient to the application of rear road; The existing IC of brief introduction encapsulates the contact-making surface in order to protect IC to encapsulate carrier band in the structural design of carrier band, strengthens resistance to wear and the antiseptic power of contact-making surface, can plate the hard gold/soft gold of one deck protection at contact-making surface.If when technique used is hard gold process, inevitably can plates the pressure welding face hard gold layer not having practical use, cause waste.Production cost is improved.In today of scientific and technological develop rapidly, encapsulate carrier band competitiveness in the world to strengthen IC, we are always in continuous research, find the way reducing production cost.
Existing IC encapsulates carrier band to protect carrier band surface, strengthens the wear-resisting of carrier band contact-making surface, anticorrosion and anti-aging capability, and carrier band contact-making surface adopts and first plates bottoming nickel dam, then plates phosphorus nickel dam, then plates pre-Gold plated Layer, the finally plating protection coating structure of hard gold/soft gold.Although the coating of this structure has good wear-resisting, anticorrosion and anti-oxidation characteristic, the phosphorus nickel technique in structure has less stable, controls and the highly difficult large feature of maintenance cost.In addition, containing layer gold in this coating structure, gold is that precious metal is expensive, thus makes the cost of this structure higher.The card particularly made at current IC encapsulation carrier band is widely used in mobile communication, ecommerce and identification documents field, and the cost rising caused due to precious metal and less stable seriously constrain the utilization and extention that IC encapsulates carrier band.
Summary of the invention
The technical problems to be solved in the utility model is: overcome the deficiencies in the prior art, provide a kind of IC encapsulate carrier band, this IC encapsulate carrier band can effectively reduce precious metal use, reduce costs, possess good corrosion resistant ability and abrasive resistance simultaneously.
The utility model solves the technical scheme that its technical problem adopts: this IC encapsulates carrier band, comprises base material, it is characterized in that: by being attached with copper foil layer, contact-making surface semi-bright nickel layer, the pre-Gold plated Layer of contact-making surface from down to up successively above base material; Base material has welding welding hole, by being filled with pressure welding face semi-bright nickel layer, the pre-Gold plated Layer in pressure welding face, welding soft gold layer from down to up successively in welding hole.
The thickness of described base material is 110 ~ 150 μm, the thickness of copper foil layer is 29 ~ 35 μm, the thickness of contact-making surface semi-bright nickel layer is 1 ~ 4 μm, the thickness of the pre-Gold plated Layer of contact-making surface is 0.0005 ~ 0.01 μm, the thickness of pressure welding face semi-bright nickel layer is 2 ~ 9 μm, the thickness of the pre-Gold plated Layer in pressure welding face is 0.0005 ~ 0.01 μm, and the thickness of welding soft gold layer is 0.1 ~ 0.5 μm.
The thickness of described base material is 130 μm, the thickness of copper foil layer is 32 μm, the thickness of contact-making surface semi-bright nickel layer is 2.5 μm, the thickness of the pre-Gold plated Layer of contact-making surface is 0.005 μm, the thickness of pressure welding face semi-bright nickel layer is 4 μm, the thickness of the pre-Gold plated Layer in pressure welding face is 0.005 μm, and the thickness of welding soft gold layer is 0.3 μm.
Described base material adopts epoxy resin cloth material, and copper foil layer adopts electro-coppering material; The pre-Gold plated Layer of the pre-Gold plated Layer of contact-making surface and pressure welding face adopts pre-gold-plated material; Contact-making surface semi-bright nickel layer and pressure welding face semi-bright nickel layer adopt semi-bright nickel material.
The utility model IC encapsulates carrier band and is described as follows:
The effect of base material is: support base material Copper Foil, makes IC encapsulate carrier band and is unlikely to too soft, protect IC.The effect of the pre-Gold plated Layer of contact-making surface is: the adhesion guaranteeing layer gold, prevents golden liquid medicine contaminated, strengthens resistance to wear and antiseptic power.The effect of contact-making surface semi-bright nickel layer is: as the barrier layer between layers of copper and layer gold, prevents golden copper from spreading mutually, strengthens resistance to wear and antiseptic power; It is simple that material semi-bright nickel used has process components, and current efficiency is high, and coating crystallization is careful, good toughness, has good corrosion resistance and resistance to wear.The effect of copper foil layer is: electric conducting material, plating ground; Be connected with integrated circuit (IC) chip, as chip and extraneous interface; There is the effect of protect IC simultaneously.The effect of pressure welding face contact-making surface semi-bright nickel layer is: as the barrier layer between layers of copper and layer gold, prevents golden copper from spreading mutually, ensures that IC encapsulates the Weldability of carrier band; It is simple that material semi-bright nickel used has process components, and current efficiency is high, and coating crystallization is careful, good toughness, has good corrosion resistance and resistance to wear.The effect of the pre-Gold plated Layer in pressure welding face is: the adhesion guaranteeing layer gold, prevents golden liquid medicine contaminated.The effect of welding soft gold layer is: improve the welding gold thread ability that IC encapsulates carrier band.
The thickness of base material is that the advantage of 110 ~ 150 μm is it can is that carrier band itself keeps certain pliability have sufficient intensity while, can bear bending test after making to make smart card; The thickness of copper foil layer is that the advantage of 29 ~ 35 μm is to make carrier band itself have enough intensity, makes resistance can not be too high, and the blocked up meeting of Copper Foil makes cost improve in addition; The thickness of contact-making surface semi-bright nickel layer is that the advantage of 1 ~ 4 μm is to ensure that adequate thickness is to intercept golden copper and spread mutually and to control cost while resisting chemicals corrosion; The thickness of the pre-Gold plated Layer of contact-making surface is that the advantage of 0.0005 ~ 0.01 μm is to play and guarantees layer gold adhesion, and the while of preventing golden liquid medicine contaminated, the enough thin of THICKNESS CONTROL reduces unnecessary noble metal waste; The thickness of the bright nickel dam in pressure welding face half is that the advantage of 2 ~ 9 μm is to ensure that adequate thickness spreads mutually to intercept golden copper, makes welding soft gold layer do not affected bonding wire ability by Cu-W ore deposit; The thickness of the pre-Gold plated Layer in pressure welding face is that the advantage of 0.0005 ~ 0.01 μm is to play and guarantees layer gold adhesion, and the while of preventing golden liquid medicine contaminated, the enough thin of THICKNESS CONTROL reduces unnecessary noble metal waste; The thickness of welding soft gold layer is that the advantage of 0.1 ~ 0.5 μm is to make carrier band have enough welded gold thread abilities, welding hole will be caused to burn because electric current is excessive simultaneously, control cost.
Compared with prior art; the beneficial effect that a kind of IC encapsulation carrier band of the present utility model has is: IC of the present invention encapsulates carrier band and adopts brand-new semi-bright nickel to add coating structure gold-plated in advance to replace traditional coating structure, eliminates the design of " the hard gold/soft gold layer of contact surface protection and the hard gold/soft gold layer of pressure welding face protection " in prior art.The coating structure of new " contact-making surface semi-bright nickel layer+pre-Gold plated Layer " is adopted to replace the coating structure of traditional " bottoming nickel dam+phosphorus nickel dam+pre-Gold plated Layer+protect by hard gold/soft gold layer ".Present invention eliminates " the phosphorus nickel dam " and " protecting by hard gold/soft gold layer " in traditional handicraft, have employed process components simple, control range is large, safeguards and is easy to " semi-bright nickel technique ".Applicant finds under study for action: first existing " phosphorus nickel dam " uses " phosphorus nickel technique ", and this technology controlling and process scope is little, complicated, and maintenance cost is high; Secondly " protecting by hard gold/soft gold layer " what adopt is Precious Metals-Gold material, self material cost is very high, and the reason of taking out of because of golden liquid medicine, and the maintenance cost of plating " protecting by hard gold/soft gold layer " is also very high.And the present invention still can ensure that while decreasing cost and the waste of unnecessary gold the corrosion resistance of IC encapsulation carrier band and resistance to wear meet the quality requirement that IC encapsulates carrier band.
Accompanying drawing explanation
Fig. 1 is the structural representation that IC encapsulates carrier band.
Wherein: 1, base material; 101, welding hole; 2, the pre-Gold plated Layer of contact-making surface; 3, contact-making surface semi-bright nickel layer; 4, copper foil layer; 5, pressure welding face semi-bright nickel layer; 6, the pre-Gold plated Layer in pressure welding face; 7, welding soft gold layer.
Embodiment
Encapsulate carrier band with reference to accompanying drawing 1, IC and comprise base material 1, by being attached with copper foil layer 4, contact-making surface semi-bright nickel layer 3, the pre-Gold plated Layer 2 of contact-making surface from down to up successively above base material 1; Base material 1 has welding welding hole 101, by being filled with pressure welding face semi-bright nickel layer 5, the pre-Gold plated Layer 6 in pressure welding face, welding soft gold layer 7 from down to up successively in welding hole 101.Described base material 1 adopts epoxy resin cloth material, and the pre-Gold plated Layer of the pre-Gold plated Layer of contact-making surface 2 and pressure welding face 6 adopts pre-gold-plated material respectively; Contact-making surface semi-bright nickel layer 3 and pressure welding face semi-bright nickel layer 5 adopt semi-bright nickel material respectively; Copper foil layer 4 adopts electro-coppering material; Welding soft gold layer 7 adopts proof gold material.
The thickness of base material 1 is 110 ~ 150 μm, the thickness of copper foil layer 4 is 29 ~ 35 μm, the thickness of contact-making surface semi-bright nickel layer 3 is 1 ~ 4 μm, the thickness of the pre-Gold plated Layer 2 of contact-making surface is 0.0005 ~ 0.01 μm, the thickness of the bright nickel dam 5 in pressure welding face half is 2 ~ 9 μm, the thickness of the pre-Gold plated Layer 6 in pressure welding face is 0.0005 ~ 0.01 μm, and the thickness of welding soft gold layer 7 is 0.1 ~ 0.5 μm.Preferably, the thickness of base material 1 is 130 μm, the thickness of copper foil layer 4 is 32 μm, the thickness of contact-making surface semi-bright nickel layer 3 is 2.5 μm, the thickness of the pre-Gold plated Layer 2 of contact-making surface is 0.005 μm, the thickness of pressure welding face semi-bright nickel layer 5 is 4 μm, and the thickness of the pre-Gold plated Layer 6 in pressure welding face is 0.005 μm, and the thickness of welding soft gold layer 7 is 0.3 μm.
The course of work: it is careful that the semi-bright nickel material that the contact-making surface semi-bright nickel layer 3 in the utility model and pressure welding face semi-bright nickel layer 5 adopt has coating crystallization, while having good corrosion resistance, there is good resistance to wear, also have current density can opereating specification wide, coating crystallization is careful, feature closely, process components is simple, and current density control range is large, be easy to control, technology stability is strong.Contact-making surface semi-bright nickel layer 3 upper surface is attached with the pre-Gold plated Layer 2 of contact-making surface, and pressure welding face semi-bright nickel layer 5 lower surface is attached with the pre-Gold plated Layer 6 in pressure welding face.The pre-Gold plated Layer of the pre-Gold plated Layer of contact-making surface 2 and pressure welding face 6 adopts pre-gold-plated material to make product electric current height district and low district all have good corrosion resistance and abrasive resistance respectively, also can play a protective role to contact-making surface semi-bright nickel layer 3 and pressure welding face semi-bright nickel layer 5.
The above, it is only preferred embodiment of the present utility model, be not the restriction this utility model being made to other form, any those skilled in the art may utilize the technology contents of above-mentioned announcement to be changed or be modified as the Equivalent embodiments of equivalent variations.But everyly do not depart from technical solution of the present invention content, any simple modification, equivalent variations and the remodeling done above embodiment according to this technical spirit of the present utility model, still belong to the protection range of these technical solutions of the utility model.
Claims (4)
1. IC encapsulates a carrier band, comprises base material (1), it is characterized in that: base material (1) top is by being attached with copper foil layer (4), contact-making surface semi-bright nickel layer (3), the pre-Gold plated Layer of contact-making surface (2) from down to up successively; Base material (1) has welding welding hole (101), by being filled with pressure welding face semi-bright nickel layer (5), the pre-Gold plated Layer in pressure welding face (6), welding soft gold layer (7) from down to up successively in welding hole (101).
2. a kind of IC according to claim 1 encapsulates carrier band, it is characterized in that: the thickness of described base material (1) is 110 ~ 150 μm, the thickness of copper foil layer (4) is 29 ~ 35 μm, the thickness of contact-making surface semi-bright nickel layer (3) is 1 ~ 4 μm, the thickness of the pre-Gold plated Layer of contact-making surface (2) is 0.0005 ~ 0.01 μm, the thickness in pressure welding face semi-bright nickel layer (5) is 2 ~ 9 μm, the thickness in the pre-Gold plated Layer in pressure welding face (6) is 0.0005 ~ 0.01 μm, and the thickness of welding soft gold layer (7) is 0.1 ~ 0.5 μm.
3. a kind of IC according to claim 2 encapsulates carrier band, it is characterized in that: the thickness of described base material (1) is 130 μm, the thickness of copper foil layer (4) is 32 μm, the thickness of contact-making surface semi-bright nickel layer (3) is 2.5 μm, the thickness of the pre-Gold plated Layer of contact-making surface (2) is 0.005 μm, the thickness in pressure welding face semi-bright nickel layer (5) is 4 μm, and the thickness in the pre-Gold plated Layer in pressure welding face (6) is 0.005 μm, and the thickness of welding soft gold layer (7) is 0.3 μm.
4. a kind of IC according to claim 1 encapsulates carrier band, it is characterized in that: described base material (1) adopts epoxy resin cloth material; Copper foil layer (4) adopts electro-coppering material; The pre-Gold plated Layer of contact-making surface (2) and pressure welding face pre-Gold plated Layer (6) adopt pre-gold-plated material; Contact-making surface semi-bright nickel layer (3) and pressure welding face semi-bright nickel layer (5) adopt semi-bright nickel material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420829182.9U CN204315568U (en) | 2014-12-24 | 2014-12-24 | A kind of IC encapsulates carrier band |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420829182.9U CN204315568U (en) | 2014-12-24 | 2014-12-24 | A kind of IC encapsulates carrier band |
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| Publication Number | Publication Date |
|---|---|
| CN204315568U true CN204315568U (en) | 2015-05-06 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201420829182.9U Withdrawn - After Issue CN204315568U (en) | 2014-12-24 | 2014-12-24 | A kind of IC encapsulates carrier band |
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| CN (1) | CN204315568U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104485317A (en) * | 2014-12-24 | 2015-04-01 | 恒汇电子科技有限公司 | IC (integrated circuit) packaged carrier tape and preparation method thereof |
| CN107086182A (en) * | 2017-06-05 | 2017-08-22 | 恒汇电子科技有限公司 | A kind of inexpensive intelligent chip carrier band and manufacture method |
-
2014
- 2014-12-24 CN CN201420829182.9U patent/CN204315568U/en not_active Withdrawn - After Issue
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104485317A (en) * | 2014-12-24 | 2015-04-01 | 恒汇电子科技有限公司 | IC (integrated circuit) packaged carrier tape and preparation method thereof |
| CN104485317B (en) * | 2014-12-24 | 2017-06-16 | 恒汇电子科技有限公司 | A kind of IC package carrier band and preparation method thereof |
| CN107086182A (en) * | 2017-06-05 | 2017-08-22 | 恒汇电子科技有限公司 | A kind of inexpensive intelligent chip carrier band and manufacture method |
| CN107086182B (en) * | 2017-06-05 | 2023-08-18 | 新恒汇电子股份有限公司 | Low-cost intelligent chip carrier tape and manufacturing method |
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| RINS | Preservation of patent right or utility model and its discharge | ||
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Date of cancellation: 20161217 Granted publication date: 20150506 |
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