CN104485317A - IC (integrated circuit) packaged carrier tape and preparation method thereof - Google Patents
IC (integrated circuit) packaged carrier tape and preparation method thereof Download PDFInfo
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- CN104485317A CN104485317A CN201410813824.0A CN201410813824A CN104485317A CN 104485317 A CN104485317 A CN 104485317A CN 201410813824 A CN201410813824 A CN 201410813824A CN 104485317 A CN104485317 A CN 104485317A
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- gold
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- bright nickel
- plated
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- 238000002360 preparation method Methods 0.000 title claims abstract description 29
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 185
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 113
- 239000010931 gold Substances 0.000 claims abstract description 113
- 229910052737 gold Inorganic materials 0.000 claims abstract description 113
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 92
- 238000007747 plating Methods 0.000 claims abstract description 55
- 238000000034 method Methods 0.000 claims abstract description 24
- 230000003213 activating effect Effects 0.000 claims abstract description 15
- 230000008569 process Effects 0.000 claims abstract description 13
- 238000001035 drying Methods 0.000 claims abstract description 3
- 238000003466 welding Methods 0.000 claims description 75
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 46
- 239000011889 copper foil Substances 0.000 claims description 44
- 239000003814 drug Substances 0.000 claims description 40
- 239000007788 liquid Substances 0.000 claims description 40
- 239000000463 material Substances 0.000 claims description 35
- 239000000203 mixture Substances 0.000 claims description 34
- 238000005238 degreasing Methods 0.000 claims description 26
- 239000000243 solution Substances 0.000 claims description 18
- 239000007864 aqueous solution Substances 0.000 claims description 17
- 238000009713 electroplating Methods 0.000 claims description 15
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 14
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical group [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 14
- 239000011591 potassium Substances 0.000 claims description 14
- 229910052700 potassium Inorganic materials 0.000 claims description 14
- 239000011593 sulfur Substances 0.000 claims description 14
- 229910052717 sulfur Inorganic materials 0.000 claims description 14
- 239000000843 powder Substances 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 238000004140 cleaning Methods 0.000 claims description 8
- 239000008367 deionised water Substances 0.000 claims description 8
- 229910021641 deionized water Inorganic materials 0.000 claims description 8
- 150000003839 salts Chemical class 0.000 claims description 8
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 claims description 7
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 7
- 239000004327 boric acid Substances 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 7
- NBBUYPNTAABDEY-UHFFFAOYSA-N cyclobutane-1,1-diol Chemical compound OC1(O)CCC1 NBBUYPNTAABDEY-UHFFFAOYSA-N 0.000 claims description 7
- IRXRGVFLQOSHOH-UHFFFAOYSA-L dipotassium;oxalate Chemical compound [K+].[K+].[O-]C(=O)C([O-])=O IRXRGVFLQOSHOH-UHFFFAOYSA-L 0.000 claims description 7
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 claims description 7
- DITXJPASYXFQAS-UHFFFAOYSA-N nickel;sulfamic acid Chemical compound [Ni].NS(O)(=O)=O DITXJPASYXFQAS-UHFFFAOYSA-N 0.000 claims description 7
- 230000010355 oscillation Effects 0.000 claims description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 239000012190 activator Substances 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 239000004744 fabric Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 238000005470 impregnation Methods 0.000 claims description 2
- OOMYACICIIMLQI-UHFFFAOYSA-L lead(2+);diacetate;hydrate Chemical compound O.[Pb+2].CC([O-])=O.CC([O-])=O OOMYACICIIMLQI-UHFFFAOYSA-L 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 abstract description 12
- 238000005260 corrosion Methods 0.000 abstract description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000010970 precious metal Substances 0.000 abstract description 3
- 239000007787 solid Substances 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 15
- 238000012360 testing method Methods 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 11
- 238000000576 coating method Methods 0.000 description 11
- 238000005538 encapsulation Methods 0.000 description 8
- GOLORTLGFDVFDW-UHFFFAOYSA-N 3-(1h-benzimidazol-2-yl)-7-(diethylamino)chromen-2-one Chemical compound C1=CC=C2NC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 GOLORTLGFDVFDW-UHFFFAOYSA-N 0.000 description 5
- 238000007598 dipping method Methods 0.000 description 5
- 229940046892 lead acetate Drugs 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000002421 anti-septic effect Effects 0.000 description 3
- 241000218202 Coptis Species 0.000 description 2
- 235000002991 Coptis groenlandica Nutrition 0.000 description 2
- 241000784726 Lycaena thetis Species 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Chemical compound [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- FFRBMBIXVSCUFS-UHFFFAOYSA-N 2,4-dinitro-1-naphthol Chemical compound C1=CC=C2C(O)=C([N+]([O-])=O)C=C([N+]([O-])=O)C2=C1 FFRBMBIXVSCUFS-UHFFFAOYSA-N 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000003712 anti-aging effect Effects 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000007634 remodeling Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- SDKPSXWGRWWLKR-UHFFFAOYSA-M sodium;9,10-dioxoanthracene-1-sulfonate Chemical compound [Na+].O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2S(=O)(=O)[O-] SDKPSXWGRWWLKR-UHFFFAOYSA-M 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Landscapes
- Electroplating Methods And Accessories (AREA)
Abstract
The invention discloses an IC (integrated circuit) packaged carrier tape and a preparation method thereof, and belongs to the technical field of a packaged carrier tape for IC cards. A contact surface of the IC packaged carrier tape adopts a brand-new semi-bright nickel and pre-plated gold plating layer structure to replace a traditional plating layer structure, the plating layer structure is not electroplated with solid gold/soft gold for protection, so that better corrosion resistance and wear resistance of the IC packaged carrier tape can be guaranteed while the cost is effectively reduced, and use of precious metal is reduced. The preparation method of the IC packaged carrier tape comprises steps as follows: 1), oil removing; 2), activating; 3), semi-bright nickel plating; 4), gold pre-plating; 5), soft gold plating; and 6), drying. The process is remarkably reduced and simplified, and the production efficiency of the IC packaged carrier tape is effectively improved.
Description
Technical field
A kind of IC encapsulates carrier band and preparation method thereof, belongs to IC-card encapsulation carrier band technical field.
Background technology
IC-card encapsulation carrier band refers to the crucial special basic material of one for integrated circuit card module encapsulation, mainly plays protect IC and as the effect of integrated circuit (IC) chip and extraneous interface, its form be banded, is generally golden yellow.Concrete use procedure is as follows: be first attached to above IC-card encapsulation carrier band by full-automatic chip mounter by IC card chip, then the node above the contact above integrated circuit (IC) chip and IC-card encapsulation carrier band coupled together the UNICOM of realizing circuit with bonding equipment, finally use encapsulating material that integrated circuit (IC) chip is protected formation integrated circuit card module, be convenient to the application of rear road; The existing IC of brief introduction encapsulates the contact-making surface in order to protect IC to encapsulate carrier band in the structural design of carrier band, strengthens resistance to wear and the antiseptic power of contact-making surface, can plate the hard gold/soft gold of one deck protection at contact-making surface.If when technique used is hard gold process, inevitably can plates the pressure welding face hard gold layer not having practical use, cause waste.Production cost is improved.In today of scientific and technological develop rapidly, encapsulate carrier band competitiveness in the world to strengthen IC, we are always in continuous research, find the way reducing production cost.
The electroplating technology flow process that existing IC encapsulates carrier band is: oil removing, activation, plating bottoming nickel, plating phosphorus nickel, in advance gold-plated, plating are protected with hard gold/soft gold, plating welding soft gold, oven dry.In order to protect carrier band surface, strengthen the wear-resisting of carrier band contact-making surface, anticorrosion and anti-aging capability, carrier band contact-making surface adopts and first plates bottoming nickel, then plates phosphorus nickel, then plates gold-plated in advance, the finally plating protection coating structure of hard gold/soft gold.Although the coating of this structure has good wear-resisting, anticorrosion and anti-oxidation characteristic, the phosphorus nickel technique in structure has less stable, controls and the highly difficult feature such as large of maintenance cost.In addition, containing layer gold in this coating structure, gold is that precious metal is expensive, thus makes the cost of this structure higher, is unfavorable for utilization and extention.
Summary of the invention
The technical problem to be solved in the present invention is: overcome the deficiencies in the prior art, a kind of IC is provided to encapsulate carrier band and preparation method thereof, this IC encapsulate carrier band can effectively reduce precious metal use, reduce costs, possess good corrosion resistant ability and abrasive resistance simultaneously, this preparation method's operation is simple, shorten and produce the used time, effectively improve the production efficiency that IC encapsulates carrier band.
The technical solution adopted for the present invention to solve the technical problems is: this IC encapsulates carrier band, comprises base material, it is characterized in that: by being attached with copper foil layer, contact-making surface semi-bright nickel layer, the pre-Gold plated Layer of contact-making surface from down to up successively above base material; Base material has welding welding hole, by being filled with pressure welding face semi-bright nickel layer, the pre-Gold plated Layer in pressure welding face, welding soft gold layer from down to up successively in welding hole.
Described base material adopts epoxy resin cloth material, and the pre-Gold plated Layer of the pre-Gold plated Layer of contact-making surface and pressure welding face adopts pre-gold-plated material; Contact-making surface semi-bright nickel layer and pressure welding face semi-bright nickel layer adopt semi-bright nickel material.
This IC encapsulates the preparation method of carrier band, it is characterized in that, by 1) oil removing; 2) activate; 3) semi-bright nickel is plated; 4) gold-plated in advance; 5) soft gold is plated; 6) the step composition of drying;
1) oil removing: with the copper foil layer of etch-forming for plating ground, have employed the technique of sonic oscillation and electrolytic degreasing to copper foil layer oil removing; Under 55 DEG C of conditions, use alkaline degreasing powder compound concentration to be the aqueous solution of 60 ~ 80g/L, electrolytic degreasing current density is 6 ~ 12ASD, and dip time is 9 ~ 27 seconds;
2) activate: at 18 ~ 29 DEG C of temperature, use activating solution to flood copper foil layer, dip time 6 ~ 18 seconds;
3) semi-bright nickel is plated: adopt 4 pilot trench to use plating semi-bright nickel liquid medicine to carry out plating semi-bright nickel in electroplating process, electroplating liquid medicine temperature is 40 ~ 65 DEG C, dip time 24s ~ 72s, current density 10 ~ 30ASD; Plating terminates at the thick contact-making surface semi-bright nickel layer of the contact-making surface plating formation 1.0 μm ~ 4 μm of copper foil layer, at the pressure welding face semi-bright nickel layer of the pressure welding face of copper foil layer plating formation 2 μm ~ 9 μm; Use interpolation not sulfur-bearing brightener 10 ~ 15ml/L aqueous impregnation process plating formed contact-making surface semi-bright nickel layer and pressure welding face semi-bright nickel layer;
4) gold-plated in advance: to use pre-gold-plated liquid medicine, respectively in contact-making surface semi-bright nickel layer outside plating 0.0005 ~ 0.01 μm of thick pre-Gold plated Layer of contact-making surface, in pressure welding face semi-bright nickel layer outside plating 0.0005 ~ 0.01 μm of pre-Gold plated Layer in thick pressure welding face, liquid medicine dip time 5 ~ 15s, current density 0.1 ~ 0.8ASD;
5) plate soft gold: use the soft golden liquid medicine of plating, the foreign-plated thickness of pre-Gold plated Layer is the welding soft gold layer of 0.1 ~ 0.5 μm in pressure welding face, liquid medicine dip time 6 ~ 18s, and current density is 1 ~ 5ASD, obtain IC and encapsulate carrier band.
Alkaline degreasing powder described in step 1) is Technic 200 alkaline degreasing powder.Containing the NaOH that mass percent is greater than 50% in described Technic 200 alkaline degreasing powder.
Step 2) described in activating solution be ZA-200 micro-etching agent 50 ~ 150g/L, the sulfuric acid of volumetric concentration 0.5 ~ 5% and the mixture of water; Or the ACT9600 activator salt aqueous solution of described activating solution to be concentration be 40 ~ 80g/L.
Plating semi-bright nickel liquid medicine composition described in step 3) is nickel sulfamic acid 80 ~ 120g/L, nickel chloride 1 ~ 12g/L, boric acid 40 ~ 60g/L; Electroplating liquid medicine Ph is 3 ~ 4.5.
Described in step 3), sulfur-bearing brightener is not the mixture of Isosorbide-5-Nitrae-butynediols, ALS and coumarin-7,8-2-pyrones.
Described in step 4), pre-gold-plated liquid medicine composition is potassium auricyanide 1.0 ~ 3.5g/L, and proportion 6 ~ 12, Ph is 3.5 ~ 4.5, temperature 40 ~ 50 DEG C.
Soft golden liquid medicine Ph5.5 ~ 6.5 are plated described in step 5), plating soft golden liquid medicine composition is potassium auricyanide 7 ~ 10g/L, proportion 10 ~ 18, mass percent 99% proportion is the potassium oxalate 30g/L of 2.1, mass percent is less than 1% lead acetate water solution 2ml/L, and mass percent is less than the 1% ethyoxyl cyclobutanediol aqueous solution 2 ~ 5ml/L.
The concrete operations that described step 6) is dried are: dry the cleaning deionized water that removing IC encapsulates carrier band remained on surface, and make IC encapsulate carrier band and keep dry, baking temperature 80 ~ 120 DEG C, baking time (is write a Chinese character in simplified form s) for 8 ~ 25 seconds.
IC of the present invention encapsulates carrier band and is described as follows: the effect of base material is: support base material Copper Foil, makes IC encapsulate carrier band and is unlikely to too soft, protect IC.The effect of the pre-Gold plated Layer of contact-making surface is: the adhesion guaranteeing layer gold, prevents golden liquid medicine contaminated, strengthens resistance to wear and antiseptic power.The effect of contact-making surface semi-bright nickel layer is: as the barrier layer between layers of copper and layer gold, prevents golden copper from spreading mutually, strengthens resistance to wear and antiseptic power; It is simple that material semi-bright nickel used has process components, and current efficiency is high, and coating crystallization is careful, good toughness, has good corrosion resistance and resistance to wear.The effect of copper foil layer is: electric conducting material, plating ground; Be connected with integrated circuit (IC) chip, as chip and extraneous interface; There is the effect of protect IC simultaneously.The effect of pressure welding face contact-making surface semi-bright nickel layer is: as the barrier layer between layers of copper and layer gold, prevents golden copper from spreading mutually, ensures that IC encapsulates the Weldability of carrier band; It is simple that material semi-bright nickel used has process components, and current efficiency is high, and coating crystallization is careful, good toughness, has good corrosion resistance and resistance to wear.The effect of the pre-Gold plated Layer in pressure welding face is: the adhesion guaranteeing layer gold, prevents golden liquid medicine contaminated.The effect of welding soft gold layer is: improve the welding gold thread ability that IC encapsulates carrier band.
Applicant designs: the thickness ratio of described base material, copper foil layer, contact-making surface semi-bright nickel layer, the pre-Gold plated Layer of contact-making surface, the bright nickel dam in pressure welding face half, the pre-Gold plated Layer in pressure welding face and welding soft gold layer is 20000 ~ 23000:6100 ~ 6500:250 ~ 350:1 ~ 3:550 ~ 650:1 ~ 4:30 ~ 50.Preferably, the thickness ratio of described base material, copper foil layer, contact-making surface semi-bright nickel layer, the pre-Gold plated Layer of contact-making surface, the bright nickel dam in pressure welding face half, the pre-Gold plated Layer in pressure welding face and welding soft gold layer is 22000:6400:300:1:600:2:40.
Preparation method of the present invention is described as follows: the effect of step 1) oil removing is the grease removing copper foil layer surface, thus ensures the adhesion of coating.Step 2) effect that activates is the oxide removing copper foil layer surface, activates copper foil layer surface, increases the adhesion of coating.The effect of step 3) plating semi-bright nickel is that copper foil surface after activating electroplates contact-making surface semi-bright nickel layer; Galvanic contact face semi-bright nickel layer, effectively can protect IC to encapsulate carrier band surface, improve corrosion resistance and resistance to wear.The gold-plated in advance effect of step 4) is the pre-Gold plated Layer of electroplating surface at contact-making surface semi-bright nickel layer, to guarantee the adhesion of follow-up soft gold layer, prevents soft golden liquid medicine below contaminated.The effect that step 5) plates soft gold is the pre-gold-plated surface plating welding soft gold layer in welding hole, to improve the welding gold thread ability that IC encapsulates carrier band.The cleaning deionized water that IC encapsulates carrier band remained on surface is dried in the effect that step 6) is dried, and makes IC encapsulate carrier band and keeps dry.
Applicant designs: the main component of the ZA-200 micro-etching agent in activating solution preparation method is Peroxide mixture, acid salt, and the auxiliary element of ZA-200 micro-etching agent is synergist and stabilizer, and preferred Kunshan Xuan Heng trade Co., Ltd buys.Containing mass percent in ACT9600 activator salt in activating solution preparation method is the sodium peroxydisulfate of 15%, preferably buys in capable (China-Hong Kong) Co., Ltd.
Compared with prior art, the beneficial effect that a kind of IC encapsulation carrier band of the present invention and preparation method thereof has is:
1, compared with prior art; IC of the present invention encapsulates carrier band and adopts brand-new semi-bright nickel to add coating structure gold-plated in advance to replace traditional coating structure, eliminates the design of " the hard gold/soft gold layer of contact surface protection and the hard gold/soft gold layer of pressure welding face protection " in prior art.The coating structure of new " contact-making surface semi-bright nickel layer+pre-Gold plated Layer " is adopted to replace the coating structure of traditional " bottoming nickel dam+phosphorus nickel dam+pre-Gold plated Layer+protect by hard gold/soft gold layer ".While decreasing cost and the waste of unnecessary gold, still can ensure that corrosion resistance and the resistance to wear of IC encapsulation carrier band meet the quality requirement that IC encapsulates carrier band.
2, preparation method of the present invention adopts oil removing, activation, plating semi-bright nickel, in advance gold-plated, plating to weld the step with soft gold, oven dry.Preparation method removes the hard gold/soft gold process of plating protection of high cost when electroplating, ensure that IC encapsulates carrier band and can reach qualified corrosion resistant ability and abrasive resistance simultaneously.Preparation method eliminates on existing Process ba-sis " the hard gold/soft gold process of plating protection "; in order to ensure that IC encapsulates corrosion resistance and the resistance to wear of carrier band; improving the nickel plating technology in traditional handicraft, is " semi-bright nickel " layer nickel technique by " plating bottoming nickel-> plates phosphorus nickel " two-layer nickel technologic improvement.
Accompanying drawing explanation
Fig. 1 is the structural representation that IC encapsulates carrier band.
Wherein: 1, base material; 101, welding hole; 2, the pre-Gold plated Layer of contact-making surface; 3, contact-making surface semi-bright nickel layer; 4, copper foil layer; 5, pressure welding face semi-bright nickel layer; 6, the pre-Gold plated Layer in pressure welding face; 7, welding soft gold layer.
Embodiment
Encapsulate carrier band with reference to accompanying drawing 1, IC and comprise base material 1, by being attached with copper foil layer 4, contact-making surface semi-bright nickel layer 3, the pre-Gold plated Layer 2 of contact-making surface from down to up successively above base material 1; Base material 1 has welding welding hole 101, by being filled with pressure welding face semi-bright nickel layer 5, the pre-Gold plated Layer 6 in pressure welding face, welding soft gold layer 7 from down to up successively in welding hole 101.Described base material 1 adopts epoxy resin cloth material, and the pre-Gold plated Layer of contact-making surface 2 adopts pre-gold-plated material; Contact-making surface semi-bright nickel layer 3 adopts semi-bright nickel material; Copper foil layer 4 adopts electro-coppering material; Pressure welding face semi-bright nickel layer 5 adopts semi-bright nickel material; The pre-Gold plated Layer in pressure welding face 6 adopts pre-gold-plated material; Welding soft gold layer 7 adopts proof gold material.
The thickness ratio of described base material 1, copper foil layer 4, contact-making surface semi-bright nickel layer 3, the pre-Gold plated Layer of contact-making surface 2, the bright nickel dam in pressure welding face half 5, the pre-Gold plated Layer 6 in pressure welding face and welding soft gold layer 7 is 20000 ~ 23000:6100 ~ 6500:250 ~ 350:1 ~ 3:550 ~ 650:1 ~ 4:30 ~ 50.
Embodiment 1 ~ 5 is embodiments that a kind of IC encapsulation carrier band of the present invention prepares preparation method, and wherein embodiment 1 is optimum embodiment.
embodiment 1
The preparation method of the present embodiment, comprises the following steps:
1) oil removing: with the copper foil layer 4 of etch-forming for plating ground, have employed the technique of sonic oscillation and electrolytic degreasing to copper foil layer 4 oil removing; Under 55 DEG C of conditions, use the aqueous solution that alkaline degreasing powder compound concentration is 70g/L, electrolytic degreasing current density is 9ASD, and dip time is 18s;
2) activate: the concentration using ACT9600 activator salt to prepare at 24 DEG C of temperature is 60g/L activating solution dipping copper foil layer 4, dip time 12s;
3) semi-bright nickel is plated: electroplate 2.5 μm of thick contact-making surface semi-bright nickel layers 3 at the contact-making surface of copper foil layer 4, the contact-making surface semi-bright nickel layer 5 of 5.5 μm is electroplated in pressure welding face; Electroplating process have employed 4 pilot trench and carries out plating semi-bright nickel; Electroplating liquid medicine composition used is nickel sulfamic acid 100g/L, nickel chloride 6g/L, and boric acid 50g/L, Ph are 3.7, and temperature is 52 DEG C, and dip time 48s current density is 20ASD, uses the second-class brightener 10 ~ 15ml/L of not sulfur-bearing; The second-class brightener of sulfur-bearing is not by Isosorbide-5-Nitrae-butynediols, ALS and coumarin-7, the mixture of 8-2-pyrones;
4) gold-plated in advance: in the foreign-plated 0.005 μm of thick pre-Gold plated Layer of contact-making surface semi-bright nickel layer; Liquid medicine composition is potassium auricyanide 2.3g/L, and proportion 9, Ph is 4, temperature 45 C; Dip time 10s, current density 0.4ASD;
5) soft gold is plated: the foreign-plated thickness of pre-Gold plated Layer is the soft gold layer of 0.3 μm in pressure welding face; Liquid medicine composition potassium auricyanide 8.5g/L, proportion 14, potassium oxalate (proportion 2.1) 30g/L of 99%, mass percent is less than 1% lead acetate 2ml/L, and mass percent is less than 1% ethyoxyl cyclobutanediol aqueous solution 3.5ml/L; Ph is 6, and temperature is 60 DEG C, dip time 12s, and current density is 3ASD;
6) dry: dry the cleaning deionized water that IC encapsulates carrier band remained on surface, make IC encapsulate carrier band and keep dry; Baking temperature 80 ~ 120 DEG C, baking time 16s.
embodiment 2
The preparation method of the present embodiment, comprises the following steps:
1) oil removing: with the copper foil layer 4 of etch-forming for plating ground, have employed the technique of sonic oscillation and electrolytic degreasing to copper foil layer 4 oil removing; Under 55 DEG C of conditions, use the aqueous solution that alkaline degreasing powder compound concentration is 60g/L, electrolytic degreasing current density is 6ASD; Dip time is 27s;
2) activate: the concentration using ACT9600 activator salt to prepare at 29 DEG C of temperature is 40g/L activating solution dipping copper foil layer 4, dip time 18s;
3) semi-bright nickel is plated: electroplate 1.6 μm of thick contact-making surface semi-bright nickel layers at the contact-making surface of copper foil layer 4, the contact-making surface semi-bright nickel layer of 4 μm is electroplated in pressure welding face.Have employed 4 pilot trench and carry out plating semi-bright nickel, electroplating liquid medicine composition is nickel sulfamic acid 80g/L, nickel chloride 1g/L, boric acid 40g/L; Ph is 3, and temperature is 65 DEG C, and dip time 72s current density controls at 10ASD, uses the second-class brightener 10 ~ 15ml/L of not sulfur-bearing; The second-class brightener of sulfur-bearing is not by Isosorbide-5-Nitrae-butynediols, ALS and coumarin-7, the mixture of 8-2-pyrones;
4) gold-plated in advance: in the foreign-plated 0.0015 μm of thick pre-Gold plated Layer of contact-making surface semi-bright nickel layer; Liquid medicine composition is potassium auricyanide 1.0g/L, and proportion 6, Ph is 3.5, temperature 50 C; Dip time 15s, current density 0.1ASD;
5) soft gold is plated: the foreign-plated thickness of pre-Gold plated Layer is the soft gold layer of 0.14 μm in pressure welding face; Liquid medicine composition potassium auricyanide 7g/L, proportion 10, mass percent 99% proportion is the potassium oxalate 30g/L of 2.1, and mass percent is less than 1% lead acetate 2ml/L, and mass percent is less than 1% ethyoxyl cyclobutanediol aqueous solution 2ml/L; Ph is 5.5, and temperature is 65 DEG C, dip time 18s, and current density is 1ASD;
6) dry: dry the cleaning deionized water that IC encapsulates carrier band remained on surface, make IC encapsulate carrier band and keep dry; Baking temperature 80 DEG C, baking time 25s.
embodiment 3
The preparation method of the present embodiment, comprises the following steps:
1) oil removing: with the copper foil layer 4 of etch-forming for plating ground, have employed the technique of sonic oscillation and electrolytic degreasing to copper foil layer 4 oil removing; Under 55 DEG C of conditions, use the aqueous solution that alkaline degreasing powder compound concentration is 80g/L, electrolytic degreasing current density is 12ASD; Dip time is 9s;
2) activate: the concentration using ACT9600 activator salt to prepare at 18 DEG C of temperature is 80g/L activating solution dipping copper foil layer 4, dip time 6s;
3) semi-bright nickel is plated: electroplate 2 μm of thick contact-making surface semi-bright nickel layers at the contact-making surface of copper foil layer 4, the pressure welding face semi-bright nickel layer 5 of 4.2 μm is electroplated in pressure welding face; Have employed 4 pilot trench and carry out plating semi-bright nickel, electroplating liquid medicine composition is nickel sulfamic acid 120g/L, nickel chloride 12g/L, boric acid 60g/L; Ph is 4.5, and temperature is 40 DEG C, and dip time 24s current density controls at 30ASD, uses the second-class brightener 10 ~ 15ml/L of not sulfur-bearing; The second-class brightener of sulfur-bearing is not by Isosorbide-5-Nitrae-butynediols, ALS and coumarin-7, the mixture of 8-2-pyrones;
4) gold-plated in advance: in the foreign-plated 0.006 μm of thick pre-Gold plated Layer of contact-making surface semi-bright nickel layer; Liquid medicine composition is potassium auricyanide 3.5g/L, and proportion 12, Ph is 4.5, temperature 40 DEG C; Dip time 5s, current density 0.8ASD;
5) soft gold is plated: the foreign-plated thickness of pre-Gold plated Layer is the soft gold layer of 0.27 μm in pressure welding face; Liquid medicine composition potassium auricyanide 10g/L, proportion 18, mass percent 99% proportion is the potassium oxalate 30g/L of 2.1, and mass percent is less than 1% lead acetate 2ml/L, and mass percent is less than 1% ethyoxyl cyclobutanediol aqueous solution 5ml/L; Ph is 6.5, and temperature is 55 DEG C, dip time 6s, and current density is 5ASD;
6) dry: dry the cleaning deionized water that IC encapsulates carrier band remained on surface, make IC encapsulate carrier band and keep dry; Baking temperature 120 DEG C, baking time 8s.
embodiment 4
The preparation method of the present embodiment, comprises the following steps:
1) oil removing: with the copper foil layer 4 of etch-forming for plating ground, have employed the technique of sonic oscillation and electrolytic degreasing to copper foil layer 4 oil removing; Under 55 DEG C of conditions, use the aqueous solution that alkaline degreasing powder compound concentration is 70g/L, electrolytic degreasing current density is 8ASD; Dip time is 9s;
2) activate: at 24 DEG C of temperature, use the sulfuric acid of ZA-200 micro-etching agent 150g/L and volumetric concentration 0.5 ~ 5% and the mixture of water as activating solution dipping copper foil layer 4, dip time 6s;
3) semi-bright nickel is plated: electroplate 1.0 μm of thick contact-making surface semi-bright nickel layers 3 at the contact-making surface of copper foil layer 4, the pressure welding face semi-bright nickel layer 5 of 2 μm is electroplated in pressure welding face; Have employed 4 pilot trench and carry out plating semi-bright nickel, electroplating liquid medicine composition is nickel sulfamic acid 100g/L, nickel chloride 6g/L, boric acid 50g/L; Ph is 3.7, and temperature is 53 DEG C, and dip time 24s current density controls at 16ASD, uses the second-class brightener 10 ~ 15ml/L of not sulfur-bearing; The second-class brightener of sulfur-bearing is not by Isosorbide-5-Nitrae-butynediols, ALS and coumarin-7, the mixture of 8-2-pyrones;
4) gold-plated in advance: in the foreign-plated 0.0005 μm of thick pre-Gold plated Layer of contact-making surface semi-bright nickel layer; Liquid medicine composition is potassium auricyanide 2.3g/L, and proportion 9, Ph is 4, temperature 45 C; Dip time 5s, current density 0.1ASD;
5) soft gold is plated: the foreign-plated thickness of pre-Gold plated Layer is the soft gold layer of 0.1 μm in pressure welding face; Liquid medicine composition potassium auricyanide 8.5g/L, proportion 14, mass percent 99% proportion is the potassium oxalate 30g/L of 2.1, and mass percent is less than 1% lead acetate 2ml/L, and mass percent is less than 1% ethyoxyl cyclobutanediol aqueous solution 3.5ml/L; Ph is 6, and temperature is 60 DEG C, dip time 6s, and current density is 2ASD;
6) dry: dry the cleaning deionized water that IC encapsulates carrier band remained on surface, make IC encapsulate carrier band and keep dry; Baking temperature 120 DEG C, baking time 8s.
embodiment 5
The preparation method of the present embodiment, comprises the following steps:
1) oil removing: with the copper foil layer 4 of etch-forming for plating ground, have employed the technique of sonic oscillation and electrolytic degreasing to copper foil layer 4 oil removing; Under 55 DEG C of conditions, use the aqueous solution that alkaline degreasing powder compound concentration is 70g/L, electrolytic degreasing current density is 8ASD; Dip time is 27s;
2) activate: at 24 DEG C of temperature, use the aqueous solution of ZA-200 micro-etching agent 50g/L as activating solution dipping copper foil layer 4, dip time 18s;
3) semi-bright nickel is plated: electroplate 4 μm of thick contact-making surface semi-bright nickel layers 3 at the contact-making surface of copper foil layer 4, the pressure welding face semi-bright nickel layer 5 of 9 μm is electroplated in pressure welding face; Have employed 4 pilot trench and carry out plating semi-bright nickel, electroplating liquid medicine composition is nickel sulfamic acid 100g/L, nickel chloride 6g/L, boric acid 50g/L; Ph is 3.7, and temperature is 57 DEG C, and dip time 72s current density controls at 19ASD, uses the second-class brightener 10 ~ 15ml/L of not sulfur-bearing; The second-class brightener of sulfur-bearing is not by Isosorbide-5-Nitrae-butynediols, ALS and coumarin-7, the mixture of 8-2-pyrones;
4) gold-plated in advance: in the foreign-plated 0.01 μm of thick pre-Gold plated Layer of contact-making surface semi-bright nickel layer; Liquid medicine composition is potassium auricyanide 2.7g/L, and proportion 9, Ph is 4, temperature 45 C; Dip time 15s, current density 0.5ASD;
5) soft gold is plated: the foreign-plated thickness of pre-Gold plated Layer is the soft gold layer of 0.5 μm in pressure welding face; Liquid medicine composition potassium auricyanide 8.5g/L, proportion 14, mass percent 99% proportion is the potassium oxalate 30g/L of 2.1, and mass percent is less than 1% lead acetate 2ml/L, and mass percent is less than 1% ethyoxyl cyclobutanediol aqueous solution 3.5ml/L; Ph is 6, and temperature is 60 DEG C, dip time 18s, and current density is 3ASD;
6) dry: dry the cleaning deionized water that IC encapsulates carrier band remained on surface, make IC encapsulate carrier band and keep dry, baking temperature 80 DEG C, baking time 25s.
performance test
Test 1: corrosion resistance is tested:
Embodiment 1 ~ 5 has been carried out neutral salt spray test (NSS) according to international standard ISO 9227:2012 " Corrosion tests in artificial atmosPheres--Salt spray tests ", and test result refers to table 1:
。
Testing staff uses 20 times of magnifying glass visual observations, and after can finding out 96h NSS, embodiment 1 ~ 5IC encapsulates carrier band surface without obvious corrosion phenomenon, and wherein the corrosion resistant performance of embodiment 1 is optimum.
Test 2: physical characteristic is tested.Test result refers to table 2; Wherein the three-wheel test of 8N and the plug test of 10,000 times all prove that embodiment 1 ~ 5 has good wear-resisting property.
Table 2 physical characteristic test result
。
Test 3: consumption gold measures examination.In embodiment 1 sample and traditional sample, respectively get 16 modules, use X ray layer thickness meter (model XDV-SDD) to measure its golden thickness respectively.Thickness data refers to table 3.According to the gold surface area of module, use the formula of " area × thickness=volume " to calculate the layer gold volume of embodiment 1 and traditional sample respectively, thus calculate the proof gold volume that embodiment 1 saves.The proof gold quality finally using the formulae discovery of formula " volume × density=quality " to go out embodiment 1 to save.Calculate the relatively traditional sample of single-bit module embodiment 1 according to thickness average value in table 3 and save proof gold quality, calculating monthly saving proof gold quality in conjunction with monthly output is 10036.62g, cost 250W unit approximately monthly can be saved, because plating 1g gold golden salt real price used is higher than the price of gold on the market according to the current price of gold.Therefore, reality is saved into and should be greater than 250W RMB/moon.
Table 3 gold thickness data
。
The above is only preferred embodiment of the present invention, and be not restriction the present invention being made to other form, any those skilled in the art may utilize the technology contents of above-mentioned announcement to be changed or be modified as the Equivalent embodiments of equivalent variations.But everyly do not depart from technical solution of the present invention content, any simple modification, equivalent variations and the remodeling done above embodiment according to technical spirit of the present invention, still belong to the protection range of technical solution of the present invention.
Claims (10)
1. IC encapsulates a carrier band, comprises base material (1), it is characterized in that: base material (1) top is by being attached with copper foil layer (4), contact-making surface semi-bright nickel layer (3), the pre-Gold plated Layer of contact-making surface (2) from down to up successively; Base material (1) has welding welding hole (101), by being filled with pressure welding face semi-bright nickel layer (5), the pre-Gold plated Layer in pressure welding face (6), welding soft gold layer (7) from down to up successively in welding hole (101).
2. a kind of IC according to claim 1 encapsulates carrier band, it is characterized in that: described base material (1) adopts epoxy resin cloth material, and the pre-Gold plated Layer of contact-making surface (2) and pressure welding face pre-Gold plated Layer (6) adopt pre-gold-plated material; Contact-making surface semi-bright nickel layer (3) and pressure welding face semi-bright nickel layer (5) adopt semi-bright nickel material.
3. a kind of IC according to claim 1 encapsulates the preparation method of carrier band, it is characterized in that, by 1) oil removing; 2) activate; 3) semi-bright nickel is plated; 4) gold-plated in advance; 5) soft gold is plated; 6) the step composition of drying;
1) oil removing: with the copper foil layer of etch-forming (4) for plating ground, have employed the technique of sonic oscillation and electrolytic degreasing to copper foil layer (4) oil removing; Under 55 DEG C of conditions, use alkaline degreasing powder compound concentration to be the aqueous solution of 60 ~ 80g/L, electrolytic degreasing current density is 6 ~ 12ASD, and dip time is 9 ~ 27 seconds;
2) activate: at 18 ~ 29 DEG C of temperature, use activating solution to flood copper foil layer (4), dip time 6 ~ 18 seconds;
3) semi-bright nickel is plated: adopt 4 pilot trench to use plating semi-bright nickel liquid medicine to carry out plating semi-bright nickel in electroplating process, electroplating liquid medicine temperature is 40 ~ 65 DEG C, dip time 24s ~ 72s, current density 10 ~ 30ASD; Plating terminates at the thick contact-making surface semi-bright nickel layer (3) of the contact-making surface plating formation 1.0 μm ~ 4 μm of copper foil layer (4), in pressure welding face semi-bright nickel layer (5) of the pressure welding face of copper foil layer (4) plating formation 2 μm ~ 9 μm; Use interpolation not sulfur-bearing brightener 10 ~ 15ml/L aqueous impregnation process plating formed contact-making surface semi-bright nickel layer (3) and pressure welding face semi-bright nickel layer (5);
4) gold-plated in advance: to use pre-gold-plated liquid medicine, respectively in contact-making surface semi-bright nickel layer (3) outside plating 0.0005 ~ 0.01 μm of thick pre-Gold plated Layer of contact-making surface (2), outside, pressure welding face semi-bright nickel layer (5) plating 0.0005 ~ 0.01 μm of pre-Gold plated Layer in thick pressure welding face (6), liquid medicine dip time 5 ~ 15s, current density 0.1 ~ 0.8ASD;
5) plate soft gold: use the soft golden liquid medicine of plating, pre-Gold plated Layer (6) foreign-plated thickness is the welding soft gold layer (7) of 0.1 ~ 0.5 μm in pressure welding face, liquid medicine dip time 6 ~ 18s, and current density is 1 ~ 5ASD, obtain IC and encapsulate carrier band.
4. a kind of IC according to claim 3 encapsulates the preparation method of carrier band, it is characterized in that: the alkaline degreasing powder described in step 1) is Technic 200 alkaline degreasing powder.
5. a kind of IC according to claim 3 encapsulates the preparation method of carrier band, it is characterized in that: step 2) described in activating solution be ZA-200 micro-etching agent 50 ~ 150g/L, the sulfuric acid of volumetric concentration 0.5 ~ 5% and the mixture of water; Or the ACT9600 activator salt aqueous solution of described activating solution to be concentration be 40 ~ 80g/L.
6. a kind of IC according to claim 3 encapsulates the preparation method of carrier band, it is characterized in that: plating semi-bright nickel liquid medicine composition described in step 3) is nickel sulfamic acid 80 ~ 120g/L, nickel chloride 1 ~ 12g/L, boric acid 40 ~ 60g/L; Electroplating liquid medicine PH is 3 ~ 4.5.
7. a kind of IC according to claim 3 encapsulates the preparation method of carrier band, it is characterized in that: described in step 3), sulfur-bearing brightener is not the mixture of Isosorbide-5-Nitrae-butynediols, ALS and coumarin-7,8-2-pyrones.
8. a kind of IC according to claim 3 encapsulates the preparation method of carrier band, it is characterized in that: described in step 4), pre-gold-plated liquid medicine composition is potassium auricyanide 1.0 ~ 3.5g/L, and proportion 6 ~ 12, PH is 3.5 ~ 4.5, temperature 40 ~ 50 DEG C.
9. a kind of IC according to claim 3 encapsulates the preparation method of carrier band, it is characterized in that: described in step 5), plate soft golden liquid medicine Ph5.5 ~ 6.5, plating soft golden liquid medicine composition is potassium auricyanide 7 ~ 10g/L, proportion 10 ~ 18, the proportion of mass percent 99% is the potassium oxalate 30g/L of 2.1, mass percent is less than 1% lead acetate water solution 2ml/L, and mass percent is less than the 1% ethyoxyl cyclobutanediol aqueous solution 2 ~ 5ml/L.
10. a kind of IC according to claim 3 encapsulates the preparation method of carrier band, it is characterized in that: the concrete operations that described step 6) is dried are: dry the cleaning deionized water that removing IC encapsulates carrier band remained on surface, make IC encapsulate carrier band to keep dry, baking temperature 80 ~ 120 DEG C, baking time 8 ~ 25 seconds.
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| CN113737265A (en) * | 2021-11-04 | 2021-12-03 | 新恒汇电子股份有限公司 | Flexible carrier band coating quality control system and control method |
| CN115418689A (en) * | 2022-11-04 | 2022-12-02 | 新恒汇电子股份有限公司 | Smart card carrier band film-coating palladium-plating process |
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