CN104112705B - A kind of lead frame copper electroplating method and lead frame, lead frame row - Google Patents
A kind of lead frame copper electroplating method and lead frame, lead frame row Download PDFInfo
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- CN104112705B CN104112705B CN201410250793.2A CN201410250793A CN104112705B CN 104112705 B CN104112705 B CN 104112705B CN 201410250793 A CN201410250793 A CN 201410250793A CN 104112705 B CN104112705 B CN 104112705B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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Abstract
Arranged the invention provides lead frame and lead frame, belong to field of semiconductor manufacture, it solve the problems, such as how small-sized encapsulated structure.The lead frame includes chip carrier and is distributed in many leads of the chip carrier side, the many leads include chip lead and pin lead, the chip lead is connected with the chip carrier, the pin lead disconnects with the chip carrier, the many leads are sheet and at grade, and the chip carrier is sheet and parallel and non-coplanar with lead place plane.It is non-coplanar using lead plane and chip carrier plane, then chip can be placed in chip carrier from lead plane closer to a surface on.Then the thickness of chip will not additionally increase the thickness of the chip after whole encapsulation, be conducive to the miniaturization of chip-packaging structure.
Description
Technical field
The invention belongs to field of semiconductor manufacture, it is related to a kind of lead frame, particularly a kind of lead frame for being more easy to manufacture
Frame and lead frame are arranged.
Background technology
Semiconductor packaging has been highly developed technique, and lead frame is core of the lead frame as integrated circuit
Piece carrier, is a kind of electricity that chip internal circuits exit and outer lead are realized by means of bonding material (spun gold, aluminium wire, copper wire)
Gas is connected, and forms the key structure part of electric loop, and it serves the function served as bridge connected with outer lead, the half of the overwhelming majority
It is required for using lead frame in conductor integrated package.
Current lead frame is substantially using acid bronze alloy as main material.But with the rise of copper valency, lead
The cost of framework is substantially increased, and very big pressure is brought to enterprise.How copper alloy is substituted using new material to have become urgently
The problem of solution.Prior art provides various solutions, such as Application No. to solve the problem
The Chinese patent " applying the aluminium alloy lead frame in power semiconductor component " of CN201010152911.8, it uses aluminium
Alloy is used as matrix material, and plating multiple layers electrodeposited coating, and this kind of scenario-frame is excessively complicated.And for example Application No.
The Chinese patent " for the aluminum leadframe of semiconductor QFN/SON devices " of CN200780011289.5, it is by zinc layers and nickel dam
The part that lead segments are not packaged material covering is plated in, its is relatively costly.
In addition, with semiconductor integrated degree more and more higher, the size requirement to semiconductor devices is less and less, and right
The high request of disposal ability causes that the space that chip reduces in size and volume is limited, therefore how to minimize main in encapsulation
In structure.How a kind of volume that can reduce encapsulating structure is provided, is all in the problem for considering in industry.
The content of the invention
The purpose of the present invention is directed to existing technology and there is above mentioned problem, it is proposed that a kind of lead frame and lead frame
Row.
The purpose of the present invention can be realized by following technical proposal：A kind of lead frame copper electroplating method is provided, it is described to draw
Wire frame matrix is made up of aluminium alloy, and the copper electroplating method includes step：
S1：Degreasing is deoiled, liquid medicine composition and content：
NaOH：30-45%, sodium metasilicate：35-40%, degreaser：40g/L, carries out degreasing and goes at 50 DEG C -70 DEG C
Oil；
S2：Preplating：Plating solution formula and content are：
Nickel sulfate：300-700g/L, sodium sulphate：8-10g/L, nickel chloride：20-25g/L, sodium chloride：2-5g/L；
Electroplating parameter is：Temperature：80-90 DEG C, current density：150-170A/dm2, electroplate liquid PH：3-4；
S3：Copper facing：Plating solution formula and content are：
Copper sulphate：130-150g/L, copper chloride：20-30g/L, hydrochloric acid：30-40mol/L, copper brightener：0.1-0.3g/
L。
Further, leaching zinc step is also included between step S1 and S2, the leaching zinc step includes：
Once soak zinc step：Alloy matrix aluminum after deoiling is put into zinc ion concentration for 35-45g/L, ferric oxide is dense
It is 60-70g/L to spend, and naoh concentration soaks 55-60 DEG C of zinc temperature to soak zinc in the mixed solution of 200-250g/L；Then again
Washed with the clear water that temperature is 50 DEG C；
Acid pickling step：Alloy matrix aluminum after once leaching zinc is put into concentration for 50-100g/L, temperature is 30-40
DEG C salpeter solution pickling；
Secondary soaking zinc step：Alloy matrix aluminum after pickling is put into every liter and contains 350-400 grams of iron oxide, 55-75 grams
Secondary soaking zinc in the mixed liquor of NaOH, mixeding liquid temperature is 55-60 DEG C；
White picking step：Alloy matrix aluminum after secondary soaking zinc is put into the salpeter solution that concentration is 700-750g/L
White picking, pickling time 20-30 minutes, 55-70 DEG C of pickling temperature；
Three leaching zinc steps：Alloy matrix aluminum after white picking is put into the solution that zinc ion concentration is 20-30g/L
Three leaching zinc, three 20-30 DEG C of leaching zinc temperature.
Further, anti-oxidant treatment step is also included after step S3；Lead frame after copper facing is put into benzo three
Nitrogen azoles concentration is 1g/L, sulfuric acid zinc concentration is 0.6g/L, and sulfurio benzo thiazole concentration is divided to process 5-10 in the mixed liquor of 2g/L
Clock.
Further, the aluminium alloy includes according to mass percent：Magnesium：0.4-1.5%, silicon：0.02-0.8%, copper：
0.2-0.5%, manganese：0.02-0.2%, chromium：0.1-0.3%, zirconium：0.05-0.25%, balance of aluminium and inevitable impurity.
Further, galvanized layer thickness is 0.1-0.5 microns, and nickel plating layer thick is 0.2-3 microns, and thickness of coated copper layer is 3-
20 microns.
The present invention also provides a kind of lead frame, and it includes that chip carrier draws be distributed in the chip carrier side many
Line, many leads include chip lead and pin lead, and the chip lead is connected with the chip carrier, and the pin draws
Line disconnects with the chip carrier, and many leads are sheet and at grade, the chip carrier for sheet and with it is described
Plane where lead is parallel and non-coplanar.
In above-mentioned lead frame, many leads are parallel to each other.
The present invention also provides a kind of lead frame row, is that the multiple of punching press or etching formation in a bonding jumper is sequentially connected
Above-mentioned lead frame, each described connection sheet side is connected with the opposite side of the lead frame, before multiple connection sheets
After connect it is in a row.
In above-mentioned lead frame row, each described connection sheet connects with the chip carrier of the lead frame, and connects
At least a groove is carved with the surface at place, and the groove extends to the whole development length of joint.
In above-mentioned lead frame row, the depth of the groove is more than 1/10th of the connection sheet thickness.
Compared with prior art, lead frame of the invention is plated using aluminium alloy as matrix material in aluminum alloy surface
, used as conductive layer, not only saving cost and meet lead frame will for mechanical performance and the various of electric property for layers of copper
Ask, meanwhile, it is non-coplanar using lead plane and chip carrier plane, then chip can be placed in chip carrier from lead plane closer to
On one surface.Then the thickness of chip will not additionally increase the thickness of the chip after whole encapsulation, be conducive to chip-packaging structure
Miniaturization.
Brief description of the drawings
Fig. 1 is the structural representation of lead frame row of the invention；
Fig. 2 is the A-A profiles of the row of lead frame shown in Fig. 1；
Fig. 3 is the partial structural diagram of the row of lead frame shown in Fig. 2.
In figure, the corresponding parts title of each reference is：
1st, connection sheet；2nd, chip carrier；3rd, pin lead；4th, chip lead；5th, groove.
Specific embodiment
The following is specific embodiment of the invention and with reference to accompanying drawing, technical scheme is further described,
But the present invention is not limited to these embodiments.
Embodiment 1
Lead frame alloy matrix aluminum is made using the element of following percentage by weight：
Magnesium：0.4%th, silicon：0.02%th, copper：0.5%th, manganese：0.02%th, chromium：0.1%th, zirconium：0.05%, balance of aluminium and
Inevitable impurity.
Element silicon can strengthen the decay resistance of aluminium alloy, improve yield strength and elasticity, but the element silicon meeting of excess
Reduce the welding performance of alloy material.
Manganese element can promote grain growth, improve the rigidity of alloy, but low-alloyed corrosion resistant can drop in the manganese element of excess
Corrosion energy.
Chromium can improve intensity, hardness and the toughness of alloy, therefore its content is higher, but chromium and aluminium element knot
Low-alloyed resistance can be dropped after conjunction, is unfavorable for the electric conductivity of lead frame.
Zr element improves the heat endurance of alloy, while reducing fragility, is easy to the cold working of lead frame, but excess
Zr element can lower the hot-working character of lead frame.
Magnesium elements are greatly improved intensity, low-temperature flexibility and the welding performance of alloy, are particularly suited for the use of lead frame,
But excessive magnesium elements can be because generation nonmetallic inclusion, reduces other alloys producings.
By obtained aluminium alloy leadframe base copper facing in accordance with the following steps：
Degreasing is deoiled, liquid medicine composition and content：
NaOH：30%, sodium metasilicate：35%, degreaser：40g/L, carries out degreasing and deoils at 50 DEG C -70 DEG C；
Once soak zinc：Alloy matrix aluminum after deoiling is put into zinc ion concentration for 35g/L, ferric oxide concentration is 60g/
L, naoh concentration soaks 55 DEG C of zinc temperature to soak zinc in the mixed solution of 20g/L；Then washed with the clear water that temperature is 50 DEG C again
Wash；
Pickling：Alloy matrix aluminum after once leaching zinc is put into concentration for 50g/L, temperature is 30 DEG C of salpeter solution
Pickling；
Secondary soaking zinc：Alloy matrix aluminum after pickling is put into every liter containing 350 grams of iron oxide, 55 grams of NaOH it is mixed
Secondary soaking zinc in liquid is closed, mixeding liquid temperature is 55 DEG C；
White picking：It is quadratic acid in the salpeter solution of 700g/L that alloy matrix aluminum after secondary soaking zinc is put into concentration
Wash, pickling time 20 minutes, 55 DEG C of pickling temperature；
Three leaching zinc：It is three leachings in the solution of 20g/L that alloy matrix aluminum after white picking is put into zinc ion concentration
Zinc, three 20 DEG C of leaching zinc temperature.
Preplating：Plating solution formula and content are：
Nickel sulfate：300g/L, sodium sulphate：8g/L, nickel chloride：20g/L, sodium chloride：2g/L；
Electroplating parameter is：Temperature：80 DEG C, current density：150A/dm2, electroplate liquid PH：3；
Copper facing：Plating solution formula and content are：
Copper sulphate：130g/L, copper chloride：200g/L, hydrochloric acid：30mol/L, copper brightener：0.1g/L.
Anti-oxidant treatment；Lead frame after copper facing is put into BTA concentration for 1g/L, sulfuric acid zinc concentration is
0.6g/L, sulfurio benzo thiazole concentration is treatment 5-10 minutes in the mixed liquor of 2g/L.
Embodiment 2
Lead frame alloy matrix aluminum is made using the element of following percentage by weight：
Magnesium：1.0%th, silicon：0.5%th, copper：0.2%th, manganese：0.04%th, chromium：0.3%th, zirconium：0.1%, balance of aluminium and not
Evitable impurity.
By obtained aluminium alloy leadframe base copper facing in accordance with the following steps：
Degreasing is deoiled, liquid medicine composition and content：
NaOH：38%, sodium metasilicate：35%, degreaser：40g/L, carries out degreasing and deoils at 50 DEG C -70 DEG C；
Once soak zinc：Alloy matrix aluminum after deoiling is put into zinc ion concentration for 40g/L, ferric oxide concentration is 65g/
L, naoh concentration soaks 57 DEG C of zinc temperature to soak zinc in the mixed solution of 230g/L；Then again with the clear water that temperature is 50 DEG C
Washing；
Pickling：Alloy matrix aluminum after once leaching zinc is put into concentration for 80g/L, temperature is 30 DEG C of salpeter solution
Pickling；
Secondary soaking zinc：Alloy matrix aluminum after pickling is put into every liter containing 380 grams of iron oxide, 60 grams of NaOH it is mixed
Secondary soaking zinc in liquid is closed, mixeding liquid temperature is 58 DEG C；
White picking：It is quadratic acid in the salpeter solution of 750g/L that alloy matrix aluminum after secondary soaking zinc is put into concentration
Wash, pickling time 25 minutes, 55 DEG C of pickling temperature；
Three leaching zinc：It is three leachings in the solution of 25g/L that alloy matrix aluminum after white picking is put into zinc ion concentration
Zinc, three 25 DEG C of leaching zinc temperature.
Preplating：Plating solution formula and content are：
Nickel sulfate：500g/L, sodium sulphate：9g/L, nickel chloride：25g/L, sodium chloride：3g/L；
Electroplating parameter is：Temperature：85 DEG C, current density：160A/dm2, electroplate liquid PH：3；
Copper facing：Plating solution formula and content are：
Copper sulphate：140g/L, copper chloride：25g/L, hydrochloric acid：30mol/L, copper brightener：0.1g/L.
Anti-oxidant treatment；Lead frame after copper facing is put into BTA concentration for 1g/L, sulfuric acid zinc concentration is
0.6g/L, sulfurio benzo thiazole concentration is treatment 5-10 minutes in the mixed liquor of 2g/L.
Embodiment 3
Lead frame alloy matrix aluminum is made using the element of following percentage by weight：
Magnesium：1.5%th, silicon：0.8%th, copper：0.2%th, manganese：0.2%th, chromium：0.3%th, zirconium：0.25%, balance of aluminium and not
Evitable impurity.
By obtained aluminium alloy leadframe base copper facing in accordance with the following steps：
Degreasing is deoiled, liquid medicine composition and content：
NaOH：45%, sodium metasilicate：40%, degreaser：40g/L, carries out degreasing and deoils at 50 DEG C -70 DEG C；
Once soak zinc：Alloy matrix aluminum after deoiling is put into zinc ion concentration for 45g/L, ferric oxide concentration is 70g/
L, naoh concentration soaks zinc temperature 60 C to soak zinc in the mixed solution of 250g/L；Then again with the clear water that temperature is 50 DEG C
Washing；
Pickling：Alloy matrix aluminum after once leaching zinc is put into concentration for 100g/L, temperature is that 40 DEG C of nitric acid is molten
Liquid pickling；
Secondary soaking zinc：Alloy matrix aluminum after pickling is put into every liter containing 400 grams of iron oxide, 75 grams of NaOH it is mixed
Secondary soaking zinc in liquid is closed, mixeding liquid temperature is 60 DEG C；
White picking：It is quadratic acid in the salpeter solution of 750g/L that alloy matrix aluminum after secondary soaking zinc is put into concentration
Wash, pickling time 25 minutes, 55 DEG C of pickling temperature；
Three leaching zinc：It is three leachings in the solution of 25g/L that alloy matrix aluminum after white picking is put into zinc ion concentration
Zinc, three 25 DEG C of leaching zinc temperature.
Preplating：Plating solution formula and content are：
Nickel sulfate：700g/L, sodium sulphate：10g/L, nickel chloride：25g/L, sodium chloride：5g/L；
Electroplating parameter is：Temperature：90 DEG C, current density：170A/dm2, electroplate liquid PH：4；
Copper facing：Plating solution formula and content are：
Copper sulphate：150g/L, copper chloride：30g/L, hydrochloric acid：40mol/L, copper brightener：0.3g/L.
Anti-oxidant treatment；Lead frame after copper facing is put into BTA concentration for 1g/L, sulfuric acid zinc concentration is
0.6g/L, sulfurio benzo thiazole concentration is treatment 5-10 minutes in the mixed liquor of 2g/L.
Above-mentioned galvanized layer thickness is 0.1-0.5 microns, and nickel plating layer thick is 0.2-3 microns, and thickness of coated copper layer is that 3-20 is micro-
Rice.
The properties of test plating albronze lead frame obtained above, test result see the table below
Knowable to above-mentioned test result, the present invention plating albronze lead frame properties it is preferable, and cost compared with
It is low.
The present invention also protects a kind of lead frame to arrange, and as shown in Figure 1 and Figure 2, lead frame row is provided with multiple lead frames
Frame.As shown in figure 1, lead frame row is to form multiple leads being arranged in order by etching or Sheet Metal Forming Technology on a bonding jumper
Framework, these lead frames are identical, and previous lead frame is connected with each other with latter, when it is desired to be used, will draw two-by-two
Connection cut-out between wire frame.
Each lead frame includes connection sheet 1, chip carrier 2 and lead, and lead includes that the chip being connected with chip carrier draws
Line 4, also including for forming the pin lead 3 of external pin.Pin lead 3 is not connected with chip carrier 2 and is in disrupted configuration, this
A little pin leads 3 will be connected by gold thread with chip.
Wherein, chip carrier 2 is in approximate square shape sheet, and multiple pin leads 3 and chip lead 4 are respectively positioned on chip carrier 2
Outside one side, and their interval settings in parallel to each other, it is possible to achieve more densely arrange, so as to arrange as much as possible
Lead.
In the present invention, above-mentioned many leads are long narrow sheet, and at grade.The chip carrier 2 of square shape sheet
It is parallel with plane where lead, but it is separated with certain distance and non-coplanar.As shown in Fig. 2 chip lead 4 connects with chip carrier 2
The one end for connecing is in bent, and one end extends to and is connected with chip carrier 2, and bends and extend to plane where lead.
Purpose using this structure is to be bent after being cut because pin lead 3 is packed so that whole chip package
There is certain thickness afterwards；And chip is pasted on chip carrier 2 by epoxy resin etc. so that the thickness after whole chip package is extremely
The height after wire kink, chip thickness, the plastic packaging thickness three's sum being encapsulated on chip are equal to less.Can so cause whole
Chip volume after encapsulation is larger.
And the present invention is non-coplanar using lead plane and the plane of chip carrier 2, preferably by there is 2~5mm, then chip can for the two
Be placed on chip carrier 2 from lead plane closer to a surface on.After then the thickness of chip will not additionally increase whole encapsulation
The thickness of chip, is conducive to the miniaturization of chip-packaging structure.
In lead frame row, when etching or stamping out multiple lead frames, because whole lead frame is relatively thin, mutually
Between connect it is bad if be easily deformed and warpage or even fracture.Therefore, need to set connecting portion in lead frame row, rising
To be also avoided that while connection function lead frame deform.
Specifically, as shown in figure 1, thering are bridge joint sections to connect per adjacent two lead, the every bridge joint of lead in the present embodiment
Section has at two, and each bridge joint sections is sequentially connected many same sides of lead, so as to lead is connected into ladder-shaped.
Further, another side parallelly with side where lead of each chip carrier 2 is provided with a connecting piece 1, respectively
The chip carrier 2 of individual lead frame has the connection sheet 1 respectively so that connection sheet 1 is correspondingly arranged in a row and front and rear connects.
The side of connection sheet 1 and chip carrier 2 is connected (if thickness is disregarded) into line and connection sheet 1 is front and rear two-by-two connects, and makes
Obtain chip carrier 2 to avoid reversing and deforming, whole lead frame row can keep smooth, be readily transported.
When chip package is carried out, connection sheet 1 is unwanted.For the ease of removing, as shown in Figure 1, Figure 3, in connection
Piece 1 is carved with least a groove 5 with the line junction of chip carrier 2, is twice groove 5 in this diagram, and the groove 5 extends to whole line connection
The development length at place.Preferably, the depth of groove 5 is more than or equal to 1/10th of the thickness of connection sheet 1 or chip carrier 2, or even greatly
In 1/5th.Also, the section of groove 5 is formed as the V-shaped of upper lower point wide.
Therefore, when removal connection sheet 1 is needed, by connection sheet 1 relative to chip carrier 2 repeatedly with groove 5 for axis bends, groove
5 bottoms will become formation of crack, easily connection sheet 1 can fracture and remove.
Specific embodiment described herein is only to the spiritual explanation for example of the present invention.Technology neck belonging to of the invention
The technical staff in domain can be made various modifications or supplement to described specific embodiment or be replaced using similar mode
Generation, but without departing from spirit of the invention or surmount scope defined in appended claims.
Although more having used the terms such as lead frame, connection sheet, lead herein, it is not precluded from using other terms
Possibility.It is used for the purpose of more easily describing and explaining essence of the invention using these terms；It is construed as appointing
A kind of what additional limitation is all disagreed with spirit of the present invention.
Claims (7)
1. a kind of lead frame copper electroplating method, the leadframe base is made up of aluminium alloy, it is characterised in that：The copper facing side
Method includes step：
S1：Degreasing is deoiled, liquid medicine composition and content：
NaOH：45%, sodium metasilicate：40%, degreaser：40g/L, carries out degreasing and deoils at 50 DEG C -70 DEG C；
S2：Preplating：Plating solution formula and content are：
Nickel sulfate：700g/L, sodium sulphate：10g/L, nickel chloride：25g/L, sodium chloride：5g/L；
Electroplating parameter is：Temperature：90 DEG C, current density：170A/dm2, electroplate liquid pH：4；
S3：Copper facing：Plating solution formula and content are：
Copper sulphate：150g/L, copper chloride：30g/L, hydrochloric acid：40mol/L, copper brightener：0.3g/L；
Wherein described aluminium alloy includes according to mass percent：Magnesium：1.5%th, silicon：0.8%th, copper：0.2%th, manganese：0.2%th, chromium：
0.3%th, zirconium：0.25%, balance of aluminium and inevitable impurity；
Also include leaching zinc step between step S1 and S2, the leaching zinc step includes：
Once soak zinc step：Alloy matrix aluminum after deoiling is put into zinc ion concentration for 45g/L, ferric oxide concentration is 70g/
L, naoh concentration soaks zinc temperature 60 C to soak zinc in the mixed solution of 250g/L；Then again with the clear water that temperature is 50 DEG C
Washing；
Acid pickling step：Alloy matrix aluminum after once leaching zinc is put into concentration for 100g/L, temperature is that 40 DEG C of nitric acid is molten
Liquid pickling；
Secondary soaking zinc step：Alloy matrix aluminum after pickling is put into every liter containing 400 grams of iron oxide, 75 grams of NaOH it is mixed
Secondary soaking zinc in liquid is closed, mixeding liquid temperature is 60 DEG C；
White picking step：It is quadratic acid in the salpeter solution of 750g/L that alloy matrix aluminum after secondary soaking zinc is put into concentration
Wash, pickling time 25 minutes, 55 DEG C of pickling temperature；
Three leaching zinc steps：It is three leachings in the solution of 25g/L that alloy matrix aluminum after white picking is put into zinc ion concentration
Zinc, three 25 DEG C of leaching zinc temperature；
Anti-oxidant treatment；Lead frame after copper facing is put into BTA concentration for 1g/L, sulfuric acid zinc concentration is 0.6g/L,
Sulfurio benzo thiazole concentration is treatment 5-10 minutes in the mixed liquor of 2g/L.
2. lead frame copper electroplating method according to claim 1, it is characterised in that：Galvanized layer thickness is 0.1-0.5 microns,
Nickel plating layer thick is 0.2-3 microns, and thickness of coated copper layer is 3-20 microns.
3. lead frame obtained in a kind of lead frame copper electroplating method as described in claim 1 or 2, it is characterised in that：Including
Chip carrier and many leads for being distributed in the chip carrier side, many leads include chip lead and pin lead, institute
State chip lead to be connected with the chip carrier, the pin lead disconnects with the chip carrier, many leads be sheet simultaneously
At grade, the chip carrier for sheet and with the lead where plane it is parallel and non-coplanar.
4. lead frame according to claim 3, it is characterised in that：The many leads are parallel to each other.
5. a kind of lead frame is arranged, it is characterised in that：For the power that the multiple that punching press in a bonding jumper or etching are formed is sequentially connected
Profit requires the lead frame described in 3 or 4, and each connection sheet side is connected with the opposite side of chip carrier, phase before and after multiple connection sheets
Connect in a row.
6. lead frame as claimed in claim 5 is arranged, it is characterised in that：The core of each described connection sheet and the lead frame
Bar connects, and at least a groove is carved with the surface of joint, and the groove extends to the whole development length of joint.
7. lead frame as claimed in claim 6 is arranged, it is characterised in that the depth of the groove is more than the connection sheet thickness
1/10th.
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| CN110016701A (en) * | 2019-05-30 | 2019-07-16 | 丁保美 | Aluminum foil substrate film plating process |
| WO2023115320A1 (en) * | 2021-12-21 | 2023-06-29 | Texas Instruments Incorporated | Nonlinear structure for connecting multiple die attach pads |
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| CN101294283A (en) * | 2007-04-29 | 2008-10-29 | 比亚迪股份有限公司 | Method for processing magnesium alloy surface |
| CN101368285A (en) * | 2008-08-28 | 2009-02-18 | 尼尔金属(苏州)有限公司 | Technique for plating copper on aluminum and aluminum alloy base material and products produced thereby |
| CN103187382A (en) * | 2011-12-27 | 2013-07-03 | 万国半导体(开曼)股份有限公司 | Aluminum alloy lead frame applied to power semiconductor component |
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