CN105047639B - A kind of processing method of power semiconductor modular lead terminal - Google Patents
A kind of processing method of power semiconductor modular lead terminal Download PDFInfo
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- CN105047639B CN105047639B CN201510533216.9A CN201510533216A CN105047639B CN 105047639 B CN105047639 B CN 105047639B CN 201510533216 A CN201510533216 A CN 201510533216A CN 105047639 B CN105047639 B CN 105047639B
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- power semiconductor
- semiconductor modular
- lead terminal
- modular lead
- processing method
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Abstract
The invention provides a kind of processing method of power semiconductor modular lead terminal, the present invention is to process raw material with the multiple aluminium row of copper or copper nickel plating row, using local punch forming power semiconductor modular lead terminal pin；Then stamping forming power semiconductor modular lead terminal pin will be subjected to tin plating processing；Then complete punching press power semiconductor modular lead terminal；Finally by the insulation crust of power semiconductor modular lead terminal landfill injection to power semiconductor modular.The processing method of the power semiconductor modular lead terminal of the present invention has the following advantages that compared with common process：It is very good using the multiple aluminium terminal of copper, bonding effect；Two times punch step is added, employing first part punching press, tin plating Sheet Metal Forming Technology again, welding effect are very good again；The reliability of module is improved, and technique is completely compatible；And first tin plating rear injection, processing technology is very simple, is adapted to volume production.
Description
Technical field
The invention belongs to power semiconductor modular technical field, more particularly, to a kind of power semiconductor modular lead terminal
Processing method.
Background technology
The lead on shell in existing power semiconductor modular structure plays a kind of by internal wiring and outside line
A kind of function of connection.Lead terminal is that aluminium wire is bonded with inner connecting way, and external connection mode is welding, therefore to lead
The material of terminal has more special requirement.Mainly have：1st, the bonding strength of bonding surface and aluminium wire is very strong；2nd, lead end
The through-current capability of son；3rd, lead terminal will meet that welding is good with outside connection.Generally have in the world by the way of at present：
1st, the fine copper terminal of plating nickel on surface, it is characterized in, bonding effect is general, and welding effect is general, cheap.Shortcoming is nickel coating
It is difficult to control, easily cause to weld and be bonded bad phenomenon presence.2nd, the multiple aluminium terminal of copper, its feature is in original pure copper
Locally one layer of aluminium lamination of attachment, remainder degree tin, then punching press are fabricated to terminal on surface.It is characterized in：Bonding is very good, but
It is due to that punching press causes welding position locally leakage copper, welding effect is preferable, but due to oxidizable at terminal leakage copper, causes reliable
Property decline.Cost is higher.
Connect for example, being referred to current power semiconductor modular in background section in Chinese patent CN201741685U
Binding structure one kind is to be welded to semiconductor chip to cover on copper ceramic substrate, will cover copper ceramic substrate again with semiconductor chip
It is welded on copper soleplate, and the shell equipped with electrode is mounted in semiconductor chip, covered on the copper coin of copper ceramic substrate, passes through
Aluminium wire bonding technology, electrode is connected to and covers copper ceramic substrate.And the bonding technology of electrode determines semiconductor module product
The critical process of reliability and yield rate, current electrode are contact pin type structure, and the bonding face of electrode is nickel plating surface, in aluminium wire
It is easy to aoxidize in bonding process.Therefore, this semiconductor module block structure is primarily present following defect, and one is due to nickel plating
Anodizing and cause nickel plating contact pin surface bond aluminium wire pulling force and shearing not to reach standard value, it is vibrated to take off bonding aluminium wire
Fall, therefore electrode part is bonded insecure or electrode and is not bonded, and causes the yield rate of semiconductor module low；Secondly, nickel plating electricity
Pole oxidation causes bonding point contact resistance big, therefore is electrified for a long time and can make the heating of aluminium wire bonding point until scorification, electrode is through-flow energy
Power is poor, longtime running poor reliability；Moreover bonding operating efficiency is low.Another power semiconductor modular structure, will partly lead first
Body chip, which is welded to, to be covered on copper ceramic substrate, then by the emitter stage of semiconductor chip, grid and covers copper ceramic substrate by aluminium wire
Position is interconnected and completes aluminium wire bonding technology as defined in upper, and the copper ceramic substrate that covers with semiconductor chip is welded into copper soleplate
On, then copper electrode terminal is welded to and has been fixed with the copper soleplate for covering copper ceramic substrate and semiconductor chip, it will finally carry
Casing and injecting glue sealing is carried out on the copper coin of electrode.This structure electrode welding procedure needs many positioning fixtures, therefore
There is complex process and thermal stress issues, and influence long-term use of reliability.
Existing power semiconductor modular lead terminal mainly has following three kinds of schemes：
Scheme one：Nickel plating processing technology, basic design and processing mode the following is, bronze medal punching press；Lead terminal is electroplated
Nickel；Terminal is separated；Landfill injection；
Scheme two：Tin plating processing technology, basic design and processing mode are as follows, and the multiple aluminium row continuous and local of copper is tin plating；Punching
Voltage lead wires terminal；Terminal is separated；Landfill injection；
Scheme three：Tin plating processing technology, basic design and processing mode are as follows, the multiple aluminium row punching lead terminal of copper；Will
Terminal separates；Landfill injection；By external connection part terminal chemical plating stannum.
But there is this certain technological deficiency in above-mentioned three kinds of technical schemes：
Scheme one：Because nickel plating processing technology is difficult to stabilization, therefore welding effect is bad, and bonding effect is also poor, reliability
It is worst；
Scheme two：Using the multiple aluminium terminal of copper, bonding effect is very good, also uses tin plating technique, but due to after first tin plating
Punching press, terminal solder side side is caused to leak copper.Welding effect has some improvement but easy rosin joint and because terminal has
Copper part is leaked, should not be placed for a long time, reliability is not high；
Scheme three, using the multiple aluminium terminal of copper, bonding effect is very good, employs tin plating technique after first injection, welding effect
Very good, reliability is high.But as a result of tin plating technique after being first molded, cause processing technology extremely complex, and the amount of being difficult to
Production.
The content of the invention
In order to solve many technical problems existing for above-mentioned existing technical scheme, it is an object of the invention to make key
Close effect and welding effect is all relatively good and power module terminal of easy processing.The present invention is to analyze module lead end
A kind of processing method of power semiconductor modular lead terminal is proposed after the current improved procedure of sub- feature and each producer, this
The processing method of invention uses local continuous tin plating technique, has the following technical effect that：1st, bonding effect is fine；2nd, welding effect
Very well；3rd, the reliability of module is improved.
One aspect of the present invention provides a kind of processing method of power semiconductor modular lead terminal, and concrete technical scheme is such as
Under：
A kind of processing method of power semiconductor modular lead terminal, it is characterised in that：Described processing method is included such as
Lower step：
Step 1: using processing raw material of the copper bar as power semiconductor modular lead terminal, copper bar surface is cleaned
Grease and dust；
Step 2: in the bottom of copper bar, compound one layer of aluminium is arranged along its length；
Step 3: using local punching press method copper bar upper end punch forming power semiconductor modular lead terminal
Pin；
Step 4: stamping forming power semiconductor modular lead terminal pin is subjected to tin plating processing；
Step 5: complete punching press power semiconductor modular lead terminal, the bottom of guarantee power semiconductor modular lead terminal
The multiple constructed of aluminium of all copper in upper surface of portion's welding ends；
Step 6: the insulation crust by power semiconductor modular lead terminal landfill injection to power semiconductor modular.
In a preferable technical scheme, described tin plating processing is chemical plating stannum or electrotinning.
Another aspect of the present invention additionally provides a kind of processing method of power semiconductor modular lead terminal, particular technique side
Case is as follows：
A kind of processing method of power semiconductor modular lead terminal, it is characterised in that：Described processing method is included such as
Lower step：
Step 1: using processing raw material of the copper bar as power semiconductor modular lead terminal, copper bar surface is cleaned
Grease and dust；
Step 2: by copper bar Entire nickel coating；
Step 3: using local punching press method copper bar upper end punch forming power semiconductor modular lead terminal
Pin；
Step 4: stamping forming power semiconductor modular lead terminal pin is subjected to tin plating processing；
Step 5: complete punching press power semiconductor modular lead terminal；
Step 6: the insulation crust by power semiconductor modular lead terminal landfill injection to power semiconductor modular.
In a preferable technical scheme, described tin plating processing is chemical plating stannum or electrotinning.
In a preferable technical scheme, described nickel plating is chemical nickel plating or electronickelling.
The processing method of the power semiconductor modular lead terminal of the present invention has the following advantages that compared with common process：Adopt
It is very good with the multiple aluminium terminal of copper, bonding effect；Two times punch step is added, employs first part punching press tin plating presser again again
Skill, welding effect are very good；The reliability of module is improved, and technique is completely compatible；And first tin plating rear injection, processing technology
It is very simple, it is adapted to volume production.
Brief description of the drawings
Fig. 1 is the structural representation for the power semiconductor modular lead terminal that the present invention processes；
Fig. 2 is the flow chart of the processing method of the first power semiconductor modular lead terminal of the present invention；
Fig. 3 is the flow chart of the processing method of second of power semiconductor modular lead terminal of the present invention；
In Fig. 1：1- lead terminal pins, 2- lead terminals bottom welding ends；
In Fig. 2：(a)-copper bar part clad aluminum row；(b) local punching press lead terminal pin；(c) lead terminal pin is tin plating；
(d) complete punching press lead terminal；(e) landfill injection；
In Fig. 3：(a)-copper bar Entire nickel coating；(b) local punching press lead terminal pin；(c) lead terminal pin is tin plating；(d) it is complete
Whole punching press lead terminal；(e) landfill injection.
Embodiment
Describe a kind of power semiconductor modular lead of the present invention in detail with reference to Figure of description 1~3 and embodiment
The processing method of terminal.
Embodiment one
A kind of processing method of power semiconductor modular lead terminal, comprises the following steps：
Step 1: using processing raw material of the strip thin slice copper bar as power semiconductor modular lead terminal, spend
Ionized water and absolute ethyl alcohol clean copper bar successively, remove the grease and dust on copper bar surface；
Step 2: in the bottom of copper bar, compound one layer of aluminium is arranged along its length；Complex method is the routine side of this area
Method
Step 3: using local punching press method copper bar upper end punch forming power semiconductor modular lead terminal
Pin；
Step 4: stamping forming power semiconductor modular lead terminal pin is subjected to tin plating processing；It is tin plating to use
Chemical plating stannum either electrotinning, or other conventional methods of this area；
Step 5: complete punching press power semiconductor modular lead terminal, the bottom of guarantee power semiconductor modular lead terminal
The multiple constructed of aluminium of all copper in upper surface of portion's welding ends；
Step 6: the insulation crust by power semiconductor modular lead terminal landfill injection to power semiconductor modular.
Embodiment two
A kind of processing method of power semiconductor modular lead terminal, comprises the following steps：
Step 1: using processing raw material of the strip thin slice copper bar as power semiconductor modular lead terminal, spend
Ionized water and absolute ethyl alcohol clean copper bar successively, remove the grease and dust on copper bar surface；；
Step 2: by copper bar Entire nickel coating；Nickel plating process is the conventional method of this area, such as chemical nickel plating or plating
Nickel；
Step 3: using local punching press method copper bar upper end punch forming power semiconductor modular lead terminal
Pin；
Step 4: stamping forming power semiconductor modular lead terminal pin is subjected to tin plating processing；It is tin plating to use
Chemical plating stannum either electrotinning, or other conventional methods of this area；
Step 5: complete punching press power semiconductor modular lead terminal；
Step 6: the insulation crust by power semiconductor modular lead terminal landfill injection to power semiconductor modular.
The processing method of the power semiconductor modular lead terminal of the present invention has the following advantages that compared with common process：Adopt
It is very good with the multiple aluminium terminal of copper, bonding effect；Two times punch step is added, employs first part punching press tin plating presser again again
Skill, welding effect are very good；The reliability of module is improved, and technique is completely compatible；And first tin plating rear injection, processing technology
It is very simple, it is adapted to volume production.
Claims (4)
- A kind of 1. processing method of power semiconductor modular lead terminal, it is characterised in that：Described processing method includes as follows Step：Step 1: using processing raw material of the copper bar as power semiconductor modular lead terminal, the grease on cleaning copper bar surface And dust；Step 2: in the bottom of copper bar, compound one layer of aluminium is arranged along its length；Step 3: using local punching press method copper bar upper end punch forming power semiconductor modular lead terminal pin；Step 4: stamping forming power semiconductor modular lead terminal pin is subjected to tin plating processing；Step 5: complete punching press power semiconductor modular lead terminal, ensures the bottom weldering of power semiconductor modular lead terminal Connect the multiple constructed of aluminium of all copper in upper surface at end；Step 6: the insulation crust by power semiconductor modular lead terminal landfill injection to power semiconductor modular.
- A kind of 2. processing method of power semiconductor modular lead terminal according to claim 1, it is characterised in that：It is described Tin plating processing be chemical plating stannum or electrotinning.
- A kind of 3. processing method of power semiconductor modular lead terminal, it is characterised in that：Described processing method includes as follows Step：Step 1: using processing raw material of the copper bar as power semiconductor modular lead terminal, the grease on cleaning copper bar surface And dust；Step 2: copper bar is integrally subjected to chemical nickel plating or electronickelling；Step 3: using local punching press method copper bar upper end punch forming power semiconductor modular lead terminal pin；Step 4: stamping forming power semiconductor modular lead terminal pin is subjected to tin plating processing；Step 5: complete punching press power semiconductor modular lead terminal；Step 6: the insulation crust by power semiconductor modular lead terminal landfill injection to power semiconductor modular.
- A kind of 4. processing method of power semiconductor modular lead terminal according to claim 3, it is characterised in that：It is described Tin plating processing be chemical plating stannum or electrotinning.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201510533216.9A CN105047639B (en) | 2015-08-26 | 2015-08-26 | A kind of processing method of power semiconductor modular lead terminal |
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| CN201510533216.9A CN105047639B (en) | 2015-08-26 | 2015-08-26 | A kind of processing method of power semiconductor modular lead terminal |
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| CN105047639A CN105047639A (en) | 2015-11-11 |
| CN105047639B true CN105047639B (en) | 2017-12-01 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| EP3797962A1 (en) * | 2019-09-30 | 2021-03-31 | Siemens Aktiengesellschaft | Electronic module housing and production thereof |
| CN111390317B (en) * | 2020-04-02 | 2021-08-03 | 昆山联滔电子有限公司 | Double-sided tin dipping of coil, welding method thereof, coil and tap |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201741685U (en) * | 2010-07-22 | 2011-02-09 | 江苏宏微科技有限公司 | Polycell power semiconductor module |
| CN103996956A (en) * | 2013-02-18 | 2014-08-20 | 蔡周贤 | Electric connector and manufacturing method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102006055086B3 (en) * | 2006-11-21 | 2008-06-19 | Tyco Electronics Amp Gmbh | Press-in pin for electrical contacts made of wire material |
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2015
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201741685U (en) * | 2010-07-22 | 2011-02-09 | 江苏宏微科技有限公司 | Polycell power semiconductor module |
| CN103996956A (en) * | 2013-02-18 | 2014-08-20 | 蔡周贤 | Electric connector and manufacturing method thereof |
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| CN105047639A (en) | 2015-11-11 |
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