CN102237275B - Novel method for manufacturing chip diode - Google Patents
Novel method for manufacturing chip diode Download PDFInfo
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- CN102237275B CN102237275B CN2010101621129A CN201010162112A CN102237275B CN 102237275 B CN102237275 B CN 102237275B CN 2010101621129 A CN2010101621129 A CN 2010101621129A CN 201010162112 A CN201010162112 A CN 201010162112A CN 102237275 B CN102237275 B CN 102237275B
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Abstract
The invention discloses a novel method for manufacturing a chip diode. The method comprises the following steps of: welding two copper leading wire electrodes of the diode, a soldering lug and a diode chip; pickling; washing by using high purity water; washing by using absolute ethanol; drying; coating; injecting; and processing a pin to form a finished product. The method is characterized in that: in the step of pickling, pickling is performed by adding acid liquor at a fixed point; in the step of washing by using the high purity water, the diode is washed by spraying water flow in a fan-shaped manner. According to the method, a mode of acid addition during pickling is changed, the traditional scattered mode is changed into the method of acid liquor addition at the fixed point, the acid consumption is reduced, the pollution to the environment is reduced, the corrosion to copper leading wires is reduced; and the high temperature performance of a product is greatly improved during washing, and the production process is simple and mature, high in efficiency, and low in energy consumption.
Description
Technical field
The present invention relates to the manufacturing of semiconductor diode, specifically cost is low, the manufacturing approach of the stamp-mounting-paper diode of superior performance.
Background technology
Along with the progress of science and technology, electrical apparatus industry just develops towards integrated, the powerful direction of height, and the cost of raw material constantly rises, and this has higher requirement for the cost and the quality of stamp-mounting-paper diode.Existing stamp-mounting-paper diode chip generally adopts repeatedly glass to burn to be coated with repeatedly chip GPP and the copper framework of photoetching and makes, because complicated height in the manufacturing process, and cost is higher; And because production process need connect as prewelding; Twice welding could be accomplished, and efficient is lower, and its energy resource consumption is big; So be necessary the production method of existing stamp-mounting-paper diode is improved, when guaranteeing performance of products, reduce cost greatly.
Summary of the invention
The objective of the invention is to provide a kind of use that can reduce nitrogen, have energy-saving and cost-reducing, the manufacturing approach of a kind of stamp-mounting-paper diode of the big reduction of cost.
To achieve these goals, the present invention adopts following technical scheme:
A kind of manufacturing approach of novel stamp-mounting-paper diode; Mainly by two bronze medals lead-in wire electrode, weld tabs, diode chip for backlight unit welding earlier with diode; Carry out the flushing of pickling and high purity water then, and then clean, dry again, gluing, injection moulding through absolute ethyl alcohol; At last pin is processed into finished product, it is characterized in that: adopt the method for concentrating fixed point to put into acid solution to carry out pickling in the said acid pickling step; Adopting in the said high purity water rinsing step becomes sector that diode is washed water flow jet.
Further, said pickle volume ratio is: HF: HNO
3: HAC: H
2SO
4=HF: HNO
3: HAC: H
2SO
4=7-11: 9-10: 10-14: 2-6, all the other are water, pickling time h
3For: 135 seconds≤h
3≤155 seconds.
Further, said pickle volume ratio is: HF: HNO
3: HAC: H
2SO
4=9: 9: 12: 4, all the other were water.
The present invention compared with prior art has following remarkable advantage:
Following sour mode when 1, changing pickling will have the following formula method of loosing now and change into and concentrate fixed point to put into acid solution, reduce sour consumption, reduce the pollution to environment simultaneously, reduce the corrosion to the copper lead-in wire.
2, adopted the mode of fan nozzle flushing can remove impurity effectively in the cleaning process.
3, adopt twice high purity water ultrasonic waves for cleaning, clean through the twice absolute ethyl alcohol again, clean the back and use supersonic dewatering, the product high-temperature behavior is improved significantly.
4, because the process of producing is simply ripe, and efficient is high, energy consumption is little, so very big practical and popularizing value is arranged.
Embodiment
A kind of manufacturing approach of stamp-mounting-paper diode, it may further comprise the steps:
(1) two bronze medals lead-in wires electrode, weld tabs, diode chip for backlight unit are packed in the clamping apparatus, send into soldering furnace and heat, temperature t
1For: 290 ℃≤t
1≤305 ℃, temperature control time h
1For: 14 minutes≤h
1≤16 minutes, the protective gas when using nitrogen as welding;
(2) diode material with step (1) slowly drops to t in company with the soldering furnace temperature
2For: 95 ℃≤t
2≤105 ℃, temperature control time h
2For: 28 minutes≤h
2≤32 minutes;
(3) in the diode material dress people pickling dish with step (2);
(4) diode material with step (3) carries out a pickling, and pickle is: HF: HNO
3: HAC: H
2SO
4=9: 9: 12: 4, volume ratio erosion removal scribing mechanical damage layer, time h
3For: 135 seconds≤h
3≤155 seconds;
(5) diode material with step (4) becomes the sector shape jet douche with high purity water with current, washing time h
4For: 50 seconds≤h
4≤70 seconds;
(6) diode material with step (5) carries out white picking, and pickle is: H
3PO
4: H
2O
2: H
2O=1: clean temperature t at 1: 3
3For: 58 ℃≤t3≤62 ℃, time h
5For: 50 seconds≤h
5≤60 seconds;
(7) diode material with step (6) becomes the sector shape jet douche with high purity water with current, washing time h
6For: 50 seconds≤h
6≤70 seconds;
(8) diode material with step (7) passes through twice high purity water ultrasonic waves for cleaning, scavenging period h again
7For: 90 seconds≤h
7≤120 seconds;
(9) diode material with step (8) cleans through the twice absolute ethyl alcohol again, cleans the back and uses supersonic dewatering, supersonic dewatering time h
7For: 50 seconds≤h
7≤70 seconds;
(10) diode material with step (9) gained is aligned on the aluminum strip;
(11) diode material of step (10) gained is put into drying in oven together with aluminum strip, bake out temperature t
4For: 150 ℃≤t
4≤160 ℃, drying time h
8For: 40 minutes≤h
8≤50 minutes, remove surperficial residual moisture;
(12) diode material of step (11) gained is sent into gluing machine, to every diode chip for backlight unit surface-coated one deck silicon insulating cement, make its surface insulation successively;
(13) diode material of step (12) gained is sent into drying in oven, bake out temperature t
5For: 198 ℃≤t
4≤202 ℃, drying time h
9Be 8 hours, make its curing;
(14) diode material of step (13) gained is placed in the stamp-mounting-paper diode injection mould, be injected into its periphery, tentatively be molded into axial stamp-mounting-paper diode with epoxy resin;
(15) diode material of step (14) gained is sent into drying in oven, bake out temperature t
6For: 165 ℃≤t
6≤175 ℃, drying time h
10Be 7 hours, make its full solidification;
(16) diode material of step (15) gained is put on the machine of flattening, copper lead-in wire in two ends only is pressed into the required face of paster;
(17) stamp-mounting-paper diode after step (16) gained is flattened places make-up machine, size as requested through the twice mould with its bending; Become stamp-mounting-paper diode.
(18), make two electrodes in use be easy to welding with tin on the stamp-mounting-paper diode two copper cash electrode platings of step (17) gained;
(19) parts are detected, print and pack the stamp-mounting-paper diode finished product.
Claims (1)
1. the manufacturing approach of a stamp-mounting-paper diode, it may further comprise the steps:
(1) two bronze medals lead-in wires electrode, weld tabs, diode chip for backlight unit are packed in the clamping apparatus, send into soldering furnace and heat, temperature t
1For: 290 ℃≤t
1≤305 ℃, temperature control time h
1For: 14 minutes≤h
1≤16 minutes, the protective gas when using nitrogen as welding;
(2) diode material with step (1) slowly drops to t in company with the soldering furnace temperature
2For: 95 ℃≤t
2≤105 ℃, temperature control time h
2For: 28 minutes≤h
2≤32 minutes;
(3) diode material of step (2) is packed in the pickling dish;
(4) diode material with step (3) carries out a pickling, and the volume ratio of each composition is in the pickle: HF: HNO
3: HAC: H
2SO
4=9: 9: 12: 4, erosion removal scribing mechanical damage layer, time h
3For: 135 seconds≤h
3≤155 seconds;
(5) diode material with step (4) becomes the sector shape jet douche with high purity water with current, washing time h
4For: 50 seconds≤h
4≤70 seconds;
(6) diode material with step (5) carries out white picking, and the volume ratio of each composition is in the pickle: H
3PO
4: H
2O
2: H
2O=1: clean temperature t at 1: 3
3For: 58 ℃≤t
3≤62 ℃, time h
5For: 50 seconds≤h
5≤60 seconds;
(7) diode material with step (6) becomes the sector shape jet douche with high purity water with current, washing time h
6For: 50 seconds≤h
6≤70 seconds;
(8) diode material with step (7) passes through twice high purity water ultrasonic waves for cleaning, scavenging period h again
7For: 90 seconds≤h
7≤120 seconds;
(9) diode material with step (8) cleans through the twice absolute ethyl alcohol again, cleans the back and uses supersonic dewatering, supersonic dewatering time h
7For: 50 seconds≤h
7≤70 seconds;
(10) diode material with step (9) gained is aligned on the aluminum strip;
(11) diode material of step (10) gained is put into drying in oven together with aluminum strip, bake out temperature t
4For: 150 ℃≤t
4≤160 ℃, drying time h
8For: 40 minutes≤h
8≤50 minutes, remove surperficial residual moisture;
(12) diode material of step (11) gained is sent into gluing machine, to every diode chip for backlight unit surface-coated one deck silicon insulating cement, make its surface insulation successively;
(13) diode material of step (12) gained is sent into drying in oven, bake out temperature t
5For: 198 ℃≤t
4≤202 ℃, drying time h
9Be 8 hours, make its curing;
(14) diode material of step (13) gained is placed in the stamp-mounting-paper diode injection mould, be injected into its periphery, tentatively be molded into axial stamp-mounting-paper diode with epoxy resin;
(15) diode material of step (14) gained is sent into drying in oven, bake out temperature t
6For: 165 ℃≤t
6≤175 ℃, drying time h
10Be 7 hours, make its full solidification;
(16) diode material of step (15) gained is put on the machine of flattening, copper lead-in wire in two ends only is pressed into the required face of paster;
(17) stamp-mounting-paper diode after step (16) gained is flattened places make-up machine, size as requested through the twice mould with its bending; Become stamp-mounting-paper diode;
(18), make two electrodes in use be easy to welding with tin on the stamp-mounting-paper diode two copper cash electrode platings of step (17) gained;
(19) parts are detected, print and pack the stamp-mounting-paper diode finished product.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101621129A CN102237275B (en) | 2010-05-05 | 2010-05-05 | Novel method for manufacturing chip diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101621129A CN102237275B (en) | 2010-05-05 | 2010-05-05 | Novel method for manufacturing chip diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102237275A CN102237275A (en) | 2011-11-09 |
| CN102237275B true CN102237275B (en) | 2012-11-21 |
Family
ID=44887803
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010101621129A Expired - Fee Related CN102237275B (en) | 2010-05-05 | 2010-05-05 | Novel method for manufacturing chip diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102237275B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102437055A (en) * | 2011-12-14 | 2012-05-02 | 成都中科精密模具有限公司 | Production method for squashed patch plastic package diode based on axial diode production line |
| CN105789045B (en) * | 2016-03-14 | 2018-12-21 | 王志敏 | A kind of preparation process of stamp-mounting-paper diode |
| CN106129049A (en) * | 2016-07-26 | 2016-11-16 | 苏州查斯特电子有限公司 | A kind of matrix form rectifier bridge stack diode |
| CN109273347A (en) * | 2018-08-03 | 2019-01-25 | 涟水芯海洋电子科技有限公司 | A kind of diode pickling technique reduced with acid |
| CN111584376A (en) * | 2020-05-26 | 2020-08-25 | 如皋市大昌电子有限公司 | Rapid assembly process of surface mount diode |
| CN111739789B (en) * | 2020-06-30 | 2024-05-03 | 安徽安美半导体有限公司 | Reworking cleaning process of diode |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2320336Y (en) * | 1997-05-23 | 1999-05-26 | 王新平 | Multi-functional spraying cleaner |
| CN101179061A (en) * | 2007-11-22 | 2008-05-14 | 周少平 | Electronic diode for ferroalloy lead wire commutation and method of producing the same |
| CN201359997Y (en) * | 2009-03-04 | 2009-12-09 | 泰州银河寰宇半导体有限公司 | Pickle sheet |
-
2010
- 2010-05-05 CN CN2010101621129A patent/CN102237275B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2320336Y (en) * | 1997-05-23 | 1999-05-26 | 王新平 | Multi-functional spraying cleaner |
| CN101179061A (en) * | 2007-11-22 | 2008-05-14 | 周少平 | Electronic diode for ferroalloy lead wire commutation and method of producing the same |
| CN201359997Y (en) * | 2009-03-04 | 2009-12-09 | 泰州银河寰宇半导体有限公司 | Pickle sheet |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102237275A (en) | 2011-11-09 |
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| C14 | Grant of patent or utility model | ||
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Granted publication date: 20121121 Termination date: 20160505 |