CN109273347A - A kind of diode pickling technique reduced with acid - Google Patents
A kind of diode pickling technique reduced with acid Download PDFInfo
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- CN109273347A CN109273347A CN201810878327.7A CN201810878327A CN109273347A CN 109273347 A CN109273347 A CN 109273347A CN 201810878327 A CN201810878327 A CN 201810878327A CN 109273347 A CN109273347 A CN 109273347A
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- diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a kind of diode pickling techniques reduced with acid, the following steps are included: the diode that diffusion is completed is spread disk as substrate, it is coated with upper anticorrosive paint on the front and back sides of diode diffusion disk, erosion resistant coating is formed, is then fed into baking oven and is dried；Diode diffusion disk after coating is cut；The chip for being coated with erosion resistant coating is put into pickling tube and carries out pickling processes；Chip after pickling is put into service sink, is cleaned using solvent, the chip after cleaning is sent into dry in baking oven；Chip after drying is assembled, soldering, obtain diode and diode product is packaged.Of the invention is greatly reduced with acid amount, is reduced the pollution to environment, is reduced production cost, while decreasing the expense of spent acid purified treatment.
Description
Technical field
The present invention relates to diode technologies fields, and in particular to a kind of diode pickling technique reduced with acid.
Background technique
Diode is a kind of device with PN junction in electronic component, and the reversed proof voltage of diode PN junction is higher, from 3V-
6000V has, and since chip cutting face is jagged or crackle after cutting, point discharge or arcing short circuit can be generated, so to lead to
Overpickling removes the crackle and burr in chip cutting face, can improve mechanical damage, dispels the impurity of adsorption, reduces surface electricity
?.The traditional processing technology of current most of diodes generally comprises six aspects, and welding pickling, molding, is electroplated, draws straight, survey
Disk, i.e., be first cut into after crystal grain and directly weld by examination packaging, carries out pickling again after the completion of welding, this processing method makes
It is very big with acid amount in acid cleaning process, only up to 1L/1000, it is so high with acid amount not only can to environmental danger,
Production cost can be improved, in consideration of it, it is necessary to make improvements to traditional diode pickling technique.
Summary of the invention
To solve the deficiencies in the prior art, greatly reduced the purpose of the present invention is to provide a kind of with acid amount, can be reduced pair
The pollution of environment can also reduce the diode pickling technique of production cost.
In order to achieve the above objectives, the present invention adopts the following technical scheme that:
A kind of diode pickling technique reduced with acid, comprising the following steps:
S1, the diode that diffusion is completed is spread to disk as substrate, is coated on the front and back sides of diode diffusion disk
Upper anticorrosive paint, formed erosion resistant coating, be then fed into baking oven and dried, drying temperature be 55 ~ 65 DEG C, drying time be 1.5 ~
2.5h；
S2, the diode diffusion disk after coating is cut, forms several chips；
S3, it the chip for being coated with erosion resistant coating is put into pickling tube carrying out pickling processes, pickling time is 120 ~ 200s, temperature is 8 ~
12℃；
S4, the chip after pickling is put into service sink, is cleaned using solvent, the chip after cleaning is sent into baking oven and is done
It is dry, it is cooled to room temperature after dry；
S5, the chip after drying is assembled, soldering, obtain diode and diode product is packaged.
Preferably, in abovementioned steps S1, diode spread disk with a thickness of 220 ~ 290 μm.
More preferably, in abovementioned steps S1, anticorrosive paint includes following each component by weight: epoxy resin 35~
47 parts, 23~36 parts of epoxy acrylate, 28~37 parts of polyurethane, six 22~26 parts of phosphorus meta-acid sodium, diisocyanate 15~29
Part, 13~18 parts of graphite powder and 5~17 parts of triethylamine.
It is highly preferred that in abovementioned steps S1, erosion resistant coating with a thickness of 1.5 ~ 2.2 μm.
It is further preferred that the acid used in pickling tube includes following each component by weight in above mentioned step S3:
Pure 2~8 parts of the concentrated sulfuric acid of chemistry, pure 3~7 parts of the hydrofluoric acid of chemistry, 2~8 parts of the pure nitric acid of chemistry and pure 8~32 parts of glacial acetic acid of chemistry.
Specifically, in abovementioned steps S4, the solvent in service sink selects alcohol, can wash away erosion resistant coating.
Preferably, in abovementioned steps S4, drying temperature is 45 ~ 55 DEG C, and drying time is 1 ~ 1.5h.
The invention has the beneficial effects that: the step of diode pickling technique with acid is reduced in the present invention is simple, first
Disk painting is covered with after erosion resistant coating and is cut into individual chip, then pickling processes are carried out to chip, then will be prevented using alcohol
Rotten layer washes away, and is finally assembled, welding process, and the chip before welding can carry out pickling in lesser container, is measured with acid
Greatly reduce, reduce the pollution to environment, reduce production cost, while decreasing the expense of spent acid purified treatment；Core
Erosion resistant coating on the positive and negative surface of piece can make acid liquid corrosion of the chip surface from pickling when, to keep the welding of chip surface
Function, to improve the quality of diode product.
Specific embodiment
Below in conjunction with detailed description of the invention by specific embodiments.
Embodiment 1
A kind of diode pickling technique reduced with acid, comprising the following steps:
S1, the diode that diffusion is completed is spread into disk as substrate, diode diffusion disk with a thickness of 220 μm, two
Be coated with anticorrosive paint on the front and back sides of pole pipe diffusion disk, form erosion resistant coating, erosion resistant coating with a thickness of 1.5 μm, then send
Enter in baking oven and dried, drying temperature is 55 DEG C, drying time 1.5h；Anticorrosive paint includes following by weight each
Component: 35 parts of epoxy resin, 23 parts of epoxy acrylate, 28 parts of polyurethane, six 22 parts of phosphorus meta-acid sodium, 15 parts of diisocyanate,
13 parts and 5 parts of triethylamine of graphite powder；
S2, the diode diffusion disk after coating is cut, forms several chips；
S3, it the chip for being coated with erosion resistant coating is put into pickling tube carries out pickling processes, pickling time 120s, temperature is 8 DEG C；Acid
The acid used in wash pool includes following each component by weight: pure 2 parts of the concentrated sulfuric acid of chemistry, pure 3 parts of the hydrofluoric acid of chemistry, chemistry
2 parts of pure nitric acid pure 8 parts of glacial acetic acid with chemistry；
S4, the chip after pickling is put into service sink, is cleaned using alcohol, the chip after cleaning is sent into baking oven and is done
It is dry, it is cooled to room temperature after dry, drying temperature is 45 DEG C, drying time 1h；
S5, the chip after drying is assembled, soldering, obtain diode and diode product is packaged.
Embodiment 2
A kind of diode pickling technique reduced with acid, comprising the following steps:
S1, the diode that diffusion is completed is spread into disk as substrate, diode diffusion disk with a thickness of 290 μm, two
Be coated with anticorrosive paint on the front and back sides of pole pipe diffusion disk, form erosion resistant coating, erosion resistant coating with a thickness of 2.2 μm, then send
Enter in baking oven and dried, drying temperature is 65 DEG C, drying time 2.5h；Anticorrosive paint includes following by weight each
Component: 47 parts of epoxy resin, 36 parts of epoxy acrylate, 37 parts of polyurethane, six 26 parts of phosphorus meta-acid sodium, 29 parts of diisocyanate,
18 parts and 17 parts of triethylamine of graphite powder；
S2, the diode diffusion disk after coating is cut, forms several chips；
S3, it the chip for being coated with erosion resistant coating is put into pickling tube carries out pickling processes, pickling time 200s, temperature is 12 DEG C；
The acid used in pickling tube includes following each component by weight: chemistry pure 8 parts of the concentrated sulfuric acid, is changed pure 7 parts of the hydrofluoric acid of chemistry
Learn 8 parts of pure nitric acid and pure 32 parts of glacial acetic acid of chemistry；
S4, the chip after pickling is put into service sink, is cleaned using alcohol, the chip after cleaning is sent into baking oven and is done
It is dry, it is cooled to room temperature after dry, drying temperature is 55 DEG C, drying time 1.5h；
S5, the chip after drying is assembled, soldering, obtain diode and diode product is packaged.
Embodiment 3
A kind of diode pickling technique reduced with acid, comprising the following steps:
S1, the diode that diffusion is completed is spread into disk as substrate, diode diffusion disk with a thickness of 250 μm, two
Be coated with anticorrosive paint on the front and back sides of pole pipe diffusion disk, form erosion resistant coating, erosion resistant coating with a thickness of 1.8 μm, then send
Enter in baking oven and dried, drying temperature is 60 DEG C, drying time 2h；Anticorrosive paint includes following each group by weight
Point: 40 parts of epoxy resin, 29 parts of epoxy acrylate, 33 parts of polyurethane, six 24 parts of phosphorus meta-acid sodium, 21 parts of diisocyanate, stone
15 parts and 11 parts of triethylamine of ink powder；
S2, the diode diffusion disk after coating is cut, forms several chips；
S3, it the chip for being coated with erosion resistant coating is put into pickling tube carries out pickling processes, pickling time 160s, temperature is 10 DEG C；
The acid used in pickling tube includes following each component by weight: chemistry pure 5 parts of the concentrated sulfuric acid, is changed pure 5 parts of the hydrofluoric acid of chemistry
Learn 5 parts of pure nitric acid and pure 20 parts of glacial acetic acid of chemistry；
S4, the chip after pickling is put into service sink, is cleaned using alcohol, the chip after cleaning is sent into baking oven and is done
It is dry, it is cooled to room temperature after dry, drying temperature is 50 DEG C, drying time 1.2h；
S5, the chip after drying is assembled, soldering, obtain diode and diode product is packaged.
Comparative example
Traditional acid cleaning process is selected, i.e., after diode diffusion disk first being cut, welded, then carries out pickling.
Disk is spread to diode using in the technical process in embodiment 1, embodiment 2, embodiment 3 and comparative example respectively
It is handled, processing result is as follows:
| Embodiment 1 | Embodiment 2 | Embodiment 3 | Comparative example | |
| It is measured with acid | 0.5L/610 thousand | 0.5L/616 thousand | 0.5L/622 thousand | 0.5L/1 thousand |
By upper table it is found that acid cleaning process of the invention, which can substantially reduce, uses acid amount, reduces the pollution to environment, reduce life
Cost is produced, while decreasing the expense of spent acid purified treatment.
The basic principles, main features and advantages of the invention have been shown and described above.The technical staff of the industry should
Understand, the above embodiments do not limit the invention in any form, all obtained by the way of equivalent substitution or equivalent transformation
Technical solution is fallen within the scope of protection of the present invention.
Claims (7)
1. a kind of diode pickling technique reduced with acid, which comprises the following steps:
S1, the diode that diffusion is completed is spread to disk as substrate, is coated on the front and back sides of diode diffusion disk
Upper anticorrosive paint, formed erosion resistant coating, be then fed into baking oven and dried, drying temperature be 55 ~ 65 DEG C, drying time be 1.5 ~
2.5h；
S2, the diode diffusion disk after coating is cut, forms several chips；
S3, it the chip for being coated with erosion resistant coating is put into pickling tube carrying out pickling processes, pickling time is 120 ~ 200s, temperature is 8 ~
12℃；
S4, the chip after pickling is put into service sink, is cleaned using solvent, the chip after cleaning is sent into baking oven and is done
It is dry, it is cooled to room temperature after dry；
S5, the chip after drying is assembled, soldering, obtain diode and diode product is packaged.
2. a kind of diode pickling technique reduced with acid according to claim 1, which is characterized in that the step S1
In, diode spread disk with a thickness of 220 ~ 290 μm.
3. a kind of diode pickling technique reduced with acid according to claim 1, which is characterized in that the step S1
In, anticorrosive paint includes following each component by weight: 35~47 parts of epoxy resin, 23~36 parts of epoxy acrylate,
28~37 parts of polyurethane, six 22~26 parts of phosphorus meta-acid sodium, 15~29 parts of diisocyanate, 13~18 parts of graphite powder and triethylamine 5
~17 parts.
4. a kind of diode pickling technique reduced with acid according to claim 1, which is characterized in that the step S1
In, erosion resistant coating with a thickness of 1.5 ~ 2.2 μm.
5. a kind of diode pickling technique reduced with acid according to claim 1, which is characterized in that the step S3
In, the acid used in pickling tube includes following each component by weight: pure 2~8 parts of the concentrated sulfuric acid of chemistry, the pure hydrofluoric acid of chemistry
3~7 parts, 2~8 parts of the pure nitric acid of chemistry and pure 8~32 parts of glacial acetic acid of chemistry.
6. a kind of diode pickling technique reduced with acid according to claim 1, which is characterized in that the step S4
In, the solvent in service sink selects alcohol.
7. a kind of diode pickling technique reduced with acid according to claim 1, which is characterized in that the step S4
In, drying temperature is 45 ~ 55 DEG C, and drying time is 1 ~ 1.5h.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810878327.7A CN109273347A (en) | 2018-08-03 | 2018-08-03 | A kind of diode pickling technique reduced with acid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810878327.7A CN109273347A (en) | 2018-08-03 | 2018-08-03 | A kind of diode pickling technique reduced with acid |
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| Publication Number | Publication Date |
|---|---|
| CN109273347A true CN109273347A (en) | 2019-01-25 |
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ID=65153054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810878327.7A Pending CN109273347A (en) | 2018-08-03 | 2018-08-03 | A kind of diode pickling technique reduced with acid |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7277822B2 (en) * | 2000-09-28 | 2007-10-02 | Blemel Kenneth G | Embedded system for diagnostics and prognostics of conduits |
| CN101681103A (en) * | 2007-06-27 | 2010-03-24 | 三菱化学株式会社 | Photosensitive composition, method, cured product, and liquid crystal display device |
| CN102237275A (en) * | 2010-05-05 | 2011-11-09 | 如皋市易达电子有限责任公司 | Novel method for manufacturing chip diode |
| CN102646586A (en) * | 2012-04-18 | 2012-08-22 | 杭州杭鑫电子工业有限公司 | Method for manufacturing silicon diode by utilizing double diffusion of P+ and N+ type impurities |
| CN102867747A (en) * | 2012-10-17 | 2013-01-09 | 如皋市大昌电子有限公司 | Production process for O.J diode |
| CN104835894A (en) * | 2014-02-12 | 2015-08-12 | 智威科技股份有限公司 | Semiconductor diode chip and manufacturing method thereof |
| CN205723523U (en) * | 2016-03-14 | 2016-11-23 | 王志敏 | A kind of stick chip type diode |
| CN106449358A (en) * | 2016-07-07 | 2017-02-22 | 如皋市大昌电子有限公司 | Preparation technology of diode |
-
2018
- 2018-08-03 CN CN201810878327.7A patent/CN109273347A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7277822B2 (en) * | 2000-09-28 | 2007-10-02 | Blemel Kenneth G | Embedded system for diagnostics and prognostics of conduits |
| CN101681103A (en) * | 2007-06-27 | 2010-03-24 | 三菱化学株式会社 | Photosensitive composition, method, cured product, and liquid crystal display device |
| CN102237275A (en) * | 2010-05-05 | 2011-11-09 | 如皋市易达电子有限责任公司 | Novel method for manufacturing chip diode |
| CN102646586A (en) * | 2012-04-18 | 2012-08-22 | 杭州杭鑫电子工业有限公司 | Method for manufacturing silicon diode by utilizing double diffusion of P+ and N+ type impurities |
| CN102867747A (en) * | 2012-10-17 | 2013-01-09 | 如皋市大昌电子有限公司 | Production process for O.J diode |
| CN104835894A (en) * | 2014-02-12 | 2015-08-12 | 智威科技股份有限公司 | Semiconductor diode chip and manufacturing method thereof |
| CN205723523U (en) * | 2016-03-14 | 2016-11-23 | 王志敏 | A kind of stick chip type diode |
| CN106449358A (en) * | 2016-07-07 | 2017-02-22 | 如皋市大昌电子有限公司 | Preparation technology of diode |
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Application publication date: 20190125 |