CN102651404B - Axial diode and fabrication method of axial diode with polyimide glue as protection glue layer - Google Patents
Axial diode and fabrication method of axial diode with polyimide glue as protection glue layer Download PDFInfo
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- CN102651404B CN102651404B CN201210164054.2A CN201210164054A CN102651404B CN 102651404 B CN102651404 B CN 102651404B CN 201210164054 A CN201210164054 A CN 201210164054A CN 102651404 B CN102651404 B CN 102651404B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
The invention discloses an axial diode which comprises a diode chip, a first copper electrode, a second copper electrode, a protection glue layer and epoxy insulation glue, wherein the diode chip is located between the two copper electrodes; an anode contact surface and a cathode contact surface of the diode chip are respectively and integrally welded with the corresponding copper electrodes through a first welding adhesion layer and a second welding adhesion layer; the two copper electrodes are respectively provided with two leads that are integrated into a whole; each of the first copper electrode and the second copper electrode is provided with a boss; the diode chip is located between the two bosses; the protection glue layer is coated at the peripheries of the diode chip, the two bosses and the two welding adhesion layers; and the epoxy insulation glue is coated at the peripheries of the two copper electrodes, the protection glue layer and parts of the two leads. The fabrication method of the axial diode with the protection glue layer as polyimide glue comprises the steps of racking, welding, pickling, gluing, solidifying, mold pressing, aging and electroplating. The axial diode is good in electrical property and high in reliability; and the fabrication method has the characteristics that the fabrication method is more reasonable, and the production efficiency is high.
Description
Technical field
The present invention relates to a kind of axial diode and preparation method thereof, belong to electronic semiconductor components technical field.
Background technology
At present, existing axial diode is arranged on electronic circuit board by its lead-in wire, plays rectified action.And the included protection glue of the axial diode of this structure is silicon rubber.And described Silicone Rubber Coated is in the periphery of diode chip for backlight unit, the first copper electrode, the second copper electrode, the first welding adhering layer and the second welding adhering layer; can only play seal protection effect (as shown in Figure 3); and cannot absorb the included diode chip for backlight unit of workpiece in its preparation process after pickling, at the various ions of its remained on surface.Detect the electrical property of workpiece in 85 ~ 90% scopes, and larger on the electrical property impact under workpiece high temperature, and again because the viscosity of silicon rubber is little, make the coated silicon rubber of workpiece, easily delay is to the lead-in wire of copper electrode.In industry, this phenomenon is referred to as to silicon rubber " easily kiss-coating ".This equally also can affect the electrical property of workpiece, make the qualification rate of product low, and production efficiency is low.
Summary of the invention
The object of the invention is: provide a kind of good electrical property, axial diode that reliability is high, and technique is reasonable, the protection glue-line that production efficiency is high is the preparation method of the axial diode of polyimides glue, to overcome the deficiency of prior art.
In order to reach above-mentioned first object, first technical scheme of the present invention is: a kind of axial diode, comprises diode chip for backlight unit, the first copper electrode, the second copper electrode, protection glue-line and epoxy insulation glue; Described diode chip for backlight unit is between the first copper electrode and the second copper electrode, and the both positive and negative polarity contact-making surface of diode chip for backlight unit is welded to connect and is integrated with the first copper electrode and the second copper electrode respectively by the first welding adhering layer and the second welding adhering layer respectively; Described the first copper electrode have with its each other one first lead-in wire, the second copper electrode have with its each other one second lead-in wire; And its:
A, described the first copper electrode have the first boss, and the second copper electrode has the second boss, and described diode chip for backlight unit is between the first boss and the second boss;
B, described protection glue-line are coated in the first boss of diode chip for backlight unit, the first copper electrode, the periphery of the second boss of the second copper electrode, the first welding adhering layer and the second welding adhering layer;
C, described epoxy insulation glue are coated in the first copper electrode, the second copper electrode, protection glue-line, and the periphery of part the first lead-in wire and the second lead-in wire.
In technique scheme, described protection glue-line is polyimides glue.But be not limited to this.
In technique scheme, described the first welding adhering layer and the second welding adhering layer are weld tabs or are soldering paste.
In order to reach above-mentioned second object; second technical scheme of the present invention is: a kind ofly prepare the method that protection glue-line as described above is the axial diode of polyimides glue; this preparation method comprise shelve, welding, pickling, gluing, solidify, mold pressing, aging and electroplate, and its:
A, described in shelve step and be, the first copper electrode, the first welding adhering layer, diode chip for backlight unit, the second welding adhering layer and the second copper electrode are packed in graphite boat successively, and make its mutual closing;
B, described welding step be, graphite boat put into soldering furnace and carry out structure welding, and the time is within the scope of 6 ~ 10 minutes, and temperature is controlled within the scope of 300 ~ 360 ℃;
C, described acid pickling step are, workpiece after welding step is put into the through hole of acid-cleaning plate, then to the concave work surface of acid-cleaning plate, inject the periphery of mixed acid dilution corrosion diode chip for backlight unit, and the time was controlled within the scope of 90 ~ 240 seconds, and the diode chip for backlight unit after corroding by deionized water rinsing; Then the diode chip for backlight unit after cleaning is put into and passivation mixed solution container is housed floods 30 ~ 60 seconds, make the periphery of diode chip for backlight unit form phosphor passivation protective layer, again workpiece is put into the supersonic wave cleaning machine that deionized water is housed and implemented Ultrasonic Cleaning, and scavenging period was controlled within the scope of 5 ~ 10 minutes; Then workpiece is put into the supersonic wave cleaning machine that isopropyl alcohol organic solvent is housed and cleaned and dewater, and cleaning and dewatering time be controlled at 120 ~ 240 seconds, finally workpiece is put into baker drying 10 ~ 20 minutes, and temperature is controlled at 80 ~ 160 ℃; Described mixed acid dilution is by nitric acid: hydrofluoric acid: acetic acid: sulfuric acid is 8 ~ 11: 9 ~ 12 by weight: the mixed liquor of 10 ~ 13:3 ~ 6 preparation, and described passivation mixed solution is by hydrogen peroxide: phosphoric acid: deionized water is the mixed liquor of 10 ~ 20: 8 ~ 15: 30 ~ 50 preparations by weight;
D, described gluing step are, diode chip for backlight unit, the first boss of the first copper electrode, the second boss of the second copper electrode, the first welding adhering layer and second that workpiece after acid pickling step is included weld after the periphery coating polyimide glue of adhering layer, by infrared lamp illumination after 0.8 ~ 1.2 hour, put into again three sections of bakings of baking oven minute temperature, be that temperature is to toast 0.5 ~ 1.5 hour within the scope of 75 ~ 85 ℃, temperature is to toast 0.5 ~ 1.5 hour within the scope of 115 ~ 125 ℃, and temperature is to toast 0.5 ~ 1.5 hour within the scope of 175 ~ 185 ℃;
E, described curing schedule are, workpiece after gluing step is put into baking oven and implement the laddering drying of ladder, be workpiece first the temperature in baking oven be controlled within the scope of 100 ~ 120 ℃ drying after 1.5 ~ 3 hours, then the temperature in baking oven is elevated within the scope of 150 ~ 170 ℃, workpiece continues drying 1.5 ~ 2.5 hours, then the temperature in baking oven is elevated within the scope of 200 ~ 220 ℃, workpiece continues drying 3 ~ 4 hours, finally the temperature in baking oven is elevated within the scope of 250 ~ 260 ℃, workpiece continues drying 8 ~ 10 hours;
F, described mold pressing step be, the workpiece after curing schedule put on mould, and after mould being arranged on the workbench of moulding press, in mould, injected epoxy insulating cement, by turning into head of moulding press, workpiece implemented to mold pressing;
G, described aging step be, the workpiece after mold pressing step is sent in baking oven to drying 3.5 ~ 4.5 hours, and temperature is controlled within the scope of 160 ~ 170 ℃, implements burin-in process;
H, described plating step are, oxide layer is removed respectively in the surface of the second lead-in wire of the first lead-in wire of the first copper electrode of the workpiece after aging step and the second copper electrode, and at the surface of the first lead-in wire and the second lead-in wire difference electrotinning, make axial diode.
In technique scheme, in described gluing steps d, also comprise secondary gluing; Described secondary gluing is after coating polyimide glue again, by workpiece through infrared lamp according to 0.5 ~ 1 hour, and then put into baking oven drying 0.6 ~ 1.5 hour, temperature is controlled within the scope of 105 ~ 115 ℃.
In technique scheme, purity >=99.5% of the isopropyl alcohol described in described acid pickling step c.
In technique scheme, removal oxide layer in described plating h step, be that described the first lead-in wire and the second lead-in wire are put into 5H immersion bubble 10 ~ 40 minutes, then put into dilute sulfuric acid and soak 5 ~ 10 minutes, and the oxide layer of removal the first lead-in wire and the second wire surface; Described 5H liquid is by Na
3pO
4: NaHCO
3: NaOH is 8 ~ 12: 18 ~ 22 by weight: 68 ~ 72 is formulated; Described dilute sulfuric acid is that 0.8 ~ 1.2: 50 ~ 100 dilutions form by sulfuric acid and water by weight.
Technique effect of the present invention is: owing to having adopted after axial diode structure of the present invention, detect the electrical property percent of pass of workpiece and bring up to more than 95%, make stability and the reliability of high-temperature behavior of axial diode high; Because described protection glue-line is polyimides glue; and described polyimides glue not only can absorb the included diode chip for backlight unit of workpiece in its preparation process after pickling; various ions at its remained on surface; effectively avoided diode chip for backlight unit to suffer the pollution after pickling; affect its conductivity; and described polyimides adhesiveness is large; can not delay on the lead-in wire of copper electrode; equally also improved the electrical property of workpiece; improved the qualification rate of product; the method that makes to prepare axial diode is more reasonable, and production efficiency is high.
Accompanying drawing explanation
Fig. 1 is the axial diode structural representation of a kind of embodiment of the present invention;
Fig. 2 is the process chart that the present invention prepares axial diode;
Fig. 3 is the structural representation of existing axial diode, and wherein, 1 is diode chip for backlight unit, and 2 is the first copper electrode; 2-1 is the first lead-in wire, and 3 is the second copper electrode, and 3-1 is the second lead-in wire, and 4 is protection glue-line; 5 is the first welding adhering layer, and 5 ' is the second welding adhering layer, and 6 is epoxy plastics glue.
Embodiment
Below in conjunction with the description of embodiment, the present invention is further illustrated, but be not limited to this.
Embodiment is unless otherwise indicated raw materials used, is the conventional raw material using of semicon industry and is commercially available product.
Embodiment one
As shown in Figure 1, a kind of axial diode, comprises diode chip for backlight unit 1, the first copper electrode 2, the second copper electrode 3, protection glue-line 4 and epoxy insulation glue 6; Described diode chip for backlight unit 1 is between the first copper electrode 2 and the second copper electrode 3, and the both positive and negative polarity contact-making surface of diode chip for backlight unit 1 is welded to connect and is integrated with the first copper electrode 2 and the second copper electrode 3 respectively by the first welding adhering layer 5 and the second welding adhering layer 5 ' respectively; Described the first copper electrode 2 have with its each other one first lead-in wire 2-1, the second copper electrode 3 have with its each other one second lead-in wire 3-1; And its: described the first copper electrode 2 has the first boss 2-2, and the second copper electrode 3 has the second boss 3-2, and described diode chip for backlight unit 1 is between the first protruding 2-2 and the second boss 3-2; Described protection glue-line 4 is coated in the first boss 2-2 of diode chip for backlight unit 1, the first copper electrode 2, the periphery of the second boss 3-2 of the second copper electrode 3, the first welding adhering layer 5 and the second welding adhering layer 5 '; Described epoxy insulation glue 6 is coated in the first copper electrode 2, the second copper electrode 3, protection glue-line 4, and the periphery of part the first lead-in wire 2-1 and the second lead-in wire 3-1.
Protection glue-line 4 of the present invention is polyimides glue.Described the first welding adhering layer 5 and the second welding adhering layer 5 ' are weld tabs or are soldering paste.
Embodiment two
As shown in Figure 2, a kind of method that to prepare as above-mentioned protection glue-line be the axial diode of polyimides glue, this preparation method comprise shelve, welding, pickling, gluing, solidify, mold pressing, aging and electroplate, and its:
A, described in shelve step and be, the first copper electrode 2, the first welding adhering layer 5, diode chip for backlight unit 1, the second welding adhering layer 5 ' and the second copper electrode 3 are packed in graphite boat successively, and make its mutual closing;
B, described welding step be, graphite boat put into soldering furnace and carry out structure welding, and the time is within the scope of 6 ~ 10 minutes, and temperature is controlled within the scope of 300 ~ 360 ℃;
C, described acid pickling step are, workpiece after welding step is put into the through hole of acid-cleaning plate, then to the concave work surface of acid-cleaning plate, inject the periphery of mixed acid dilution corrosion diode chip for backlight unit 1, and the time was controlled within the scope of 90 ~ 240 seconds, and the diode chip for backlight unit 1 after corroding by deionized water rinsing; Then the diode chip for backlight unit 1 after cleaning is put into and passivation mixed solution container is housed floods 30 ~ 60 seconds, make the periphery of diode chip for backlight unit 1 form phosphor passivation protective layer, again workpiece is put into the supersonic wave cleaning machine that deionized water is housed and implemented Ultrasonic Cleaning, and scavenging period was controlled within the scope of 5 ~ 10 minutes, described in deionized water is housed the FREQUENCY CONTROL of supersonic wave cleaning machine at 18 ~ 25Hz; Then workpiece being put into the supersonic wave cleaning machine that isopropyl alcohol organic solvent is housed cleans and dewaters, and cleaning and dewatering time are controlled at 120 ~ 240 seconds, finally workpiece is put into baker drying 10 ~ 20 minutes, and temperature is controlled at 80 ~ 160 ℃, described in isopropyl alcohol is housed the FREQUENCY CONTROL of supersonic wave cleaning machine at 18 ~ 25Hz; Described mixed acid dilution is by nitric acid: hydrofluoric acid: acetic acid: sulfuric acid is 8 ~ 11: 9 ~ 12 by weight: the mixed liquor of 10 ~ 13:3 ~ 6 preparation, and described passivation mixed solution is by hydrogen peroxide: phosphoric acid: deionized water is the mixed liquor of 10 ~ 20: 8 ~ 15: 30 ~ 50 preparations by weight;
D, described gluing step are, diode chip for backlight unit 1, the first boss 2-2 of the first copper electrode 2, the second boss 3-2 of the second copper electrode 3, the first welding adhering layer 5 and second that workpiece after acid pickling step is included weld after the periphery coating polyimide glue of adhering layer 5 ', by infrared lamp illumination after 0.8 ~ 1.2 hour, put into again three sections of bakings of baking oven minute temperature, be that temperature is to toast 0.5 ~ 1.5 hour within the scope of 75 ~ 85 ℃, temperature is to toast 0.5 ~ 1.5 hour within the scope of 115 ~ 125 ℃, and temperature is to toast 0.5 ~ 1.5 hour within the scope of 175 ~ 185 ℃;
E, described curing schedule are, workpiece after gluing step is put into baking oven and implement the laddering drying of ladder, be workpiece first the temperature in baking oven be controlled within the scope of 100 ~ 120 ℃ drying after 1.5 ~ 3 hours, then the temperature in baking oven is elevated within the scope of 150 ~ 170 ℃, workpiece continues drying 1.5 ~ 2.5 hours, then the temperature in baking oven is elevated within the scope of 200 ~ 220 ℃, workpiece continues drying 3 ~ 4 hours, finally the temperature in baking oven is elevated within the scope of 250 ~ 260 ℃, workpiece continues drying 8 ~ 10 hours;
F, described mold pressing step be, the workpiece after curing schedule put on mould, and after mould being arranged on the workbench of moulding press, in mould, injected epoxy insulating cement, by turning into head of moulding press, workpiece implemented to mold pressing;
G, described aging step be, the workpiece after mold pressing step is sent in baking oven to drying 3.5 ~ 4.5 hours, and temperature is controlled within the scope of 160 ~ 170 ℃, implements burin-in process;
H, described plating step are, oxide layer is removed respectively in the surface of the second lead-in wire 3-1 of the first lead-in wire 2-1 of the first copper electrode 2 of the workpiece after aging step and the second copper electrode 3, and the surface difference electrotinning at the first lead-in wire 2-1 and the second lead-in wire 3-1, makes axial diode.
In order to prevent that workpiece from having Bubble formation after a gluing, in described gluing steps d, also comprise secondary gluing; Described secondary gluing is after coating polyimide glue again, by workpiece through infrared lamp according to 0.5 ~ 1 hour, and then put into baking oven drying 0.6 ~ 1.5 hour, temperature is controlled within the scope of 105 ~ 115 ℃.
Purity >=99.5% of the isopropyl alcohol described in acid pickling step c of the present invention.
Removal oxide layer in described plating h step, is that described the first lead-in wire 2-1 and the second lead-in wire 3-1 are put into 5H immersion bubble 10 ~ 40 minutes, then puts into dilute sulfuric acid and soaks 5 ~ 10 minutes, and the oxide layer on removal the first lead-in wire 2-1 and the second lead-in wire 3-1 surface; Described 5H liquid is by Na
3pO
4: NaHCO
3: NaOH is 8 ~ 12: 18 ~ 22 by weight: 68 ~ 72 is formulated; Described dilute sulfuric acid is that 0.8 ~ 1.2: 50 ~ 100 dilutions form by sulfuric acid and water by weight.
Isopropyl alcohol of the present invention is to be produced by Changzhou Xinchang reagent Co., Ltd, and specification is electronics industry level; Polyimides Jiao Shiyou Beijing Bomi Sci. & Tech. Co., Ltd. produces, model ZKPI-305IIE, and its viscosity is 2000-7000 centipoise, is beige liquid; Described epoxy insulation glue is that Henkel Hua Wei Co., Ltd produces, and model is KL-1000-3NP.
Lab scale effect of the present invention shows, adopts the present invention than the existing method of preparing axial diode, and its technique is more reasonable, and qualification rate is high, for manufacturing high-quality electronic device, provides technical support.
Claims (4)
- One kind to protect glue-line be the preparation method of the axial diode of polyimides glue, axial diode described in it, comprises diode chip for backlight unit (1), the first copper electrode (2), the second copper electrode (3), polyimides glue protection glue-line (4) and epoxy insulation glue (6); Described diode chip for backlight unit (1) is positioned between first boss (2-2) of the first copper electrode (2) and second boss (3-2) of the second copper electrode (3), and the both positive and negative polarity contact-making surface of diode chip for backlight unit (1) welds adhering layer (5 ') by the first weld tabs or soldering paste welding adhering layer (5) and the second weld tabs or soldering paste respectively and is welded to connect and is integrated with first boss (2-2) of the first copper electrode (2) and the second copper electrode (3) second boss (3-2) respectively; Described the first copper electrode (2) have with its each other one first lead-in wire (2-1), the second copper electrode (3) have with its each other one second lead-in wire (3-1); Described polyimides glue protection glue-line (4) is coated in first boss (2-2) of diode chip for backlight unit (1), the first copper electrode (2), the periphery of second boss (3-2) of the second copper electrode (3), the first weld tabs or soldering paste welding adhering layer (5) and the second weld tabs or soldering paste welding adhering layer (5 '); Described epoxy insulation glue (6) is coated in the first copper electrode (2), the second copper electrode (3), polyimides glue protection glue-line (4), and the periphery of part the first lead-in wire (2-1) and the second lead-in wire (3-1); This preparation method comprise shelve, welding, pickling, gluing, solidify, mold pressing, aging and electroplate, it is characterized in that:A, described in shelve step and be, the first copper electrode (2), the first weld tabs or soldering paste welding adhering layer (5), diode chip for backlight unit (1), the second weld tabs or soldering paste welding adhering layer (5 ') and the second copper electrode (3) are packed in graphite boat successively, and make its mutual closing;B, described welding step be, the graphite boat after shelving step put into soldering furnace and carry out structure welding, and the time is within the scope of 6 ~ 10 minutes, and temperature is controlled within the scope of 300 ~ 360 ℃;C, described acid pickling step are, workpiece after welding step is put into the through hole of acid-cleaning plate, then to the concave work surface of acid-cleaning plate, inject the periphery of mixed acid dilution corrosion diode chip for backlight unit (1), and the time was controlled within the scope of 90 ~ 240 seconds, and the diode chip for backlight unit (1) after corroding by deionized water rinsing; Then the diode chip for backlight unit (1) after cleaning is put into and passivation mixed solution container is housed floods 30 ~ 60 seconds, make the periphery of diode chip for backlight unit (1) form phosphor passivation protective layer, again workpiece is put into the supersonic wave cleaning machine that deionized water is housed and implemented Ultrasonic Cleaning, and scavenging period was controlled within the scope of 5 ~ 10 minutes; Then workpiece is put into the supersonic wave cleaning machine that isopropyl alcohol organic solvent is housed and cleaned and dewater, and cleaning and dewatering time be controlled at 120 ~ 240 seconds, finally workpiece is put into baker drying 10 ~ 20 minutes, and temperature is controlled at 80 ~ 160 ℃; Described mixed acid dilution is by the conventional nitric acid using of semicon industry: hydrofluoric acid: acetic acid: sulfuric acid is 8 ~ 11: 9 ~ 12 by weight: the mixed liquor of 10 ~ 13:3 ~ 6 preparation, and described passivation mixed solution is by the conventional hydrogen peroxide using of semicon industry: phosphoric acid: deionized water is the mixed liquor of 10 ~ 20: 8 ~ 15: 30 ~ 50 preparations by weight;D, described gluing step is, by the included diode chip for backlight unit of the workpiece after acid pickling step (1), first boss (2-2) of the first copper electrode (2), second boss (3-2) of the second copper electrode (3), after the periphery coating polyimide glue of the first weld tabs or soldering paste welding adhering layer (5) and the second weld tabs or soldering paste welding adhering layer (5 '), by infrared lamp illumination after 0.8 ~ 1.2 hour, put into again three sections of bakings of baking oven minute temperature, be that temperature is to toast 0.5 ~ 1.5 hour within the scope of 75 ~ 85 ℃, temperature is to toast 0.5 ~ 1.5 hour within the scope of 115 ~ 125 ℃, temperature is to toast 0.5 ~ 1.5 hour within the scope of 175 ~ 185 ℃,E, described curing schedule are, workpiece after gluing step is put into baking oven and implement the laddering drying of ladder, be workpiece first the temperature in baking oven be controlled within the scope of 100 ~ 120 ℃ drying after 1.5 ~ 3 hours, then the temperature in baking oven is elevated within the scope of 150 ~ 170 ℃, workpiece continues drying 1.5 ~ 2.5 hours, then the temperature in baking oven is elevated within the scope of 200 ~ 220 ℃, workpiece continues drying 3 ~ 4 hours, finally the temperature in baking oven is elevated within the scope of 250 ~ 260 ℃, workpiece continues drying 8 ~ 10 hours;F, described mold pressing step be, the workpiece after curing schedule put on mould, and after mould being arranged on the workbench of moulding press, in mould, injected epoxy insulating cement, by turning into head of moulding press, workpiece implemented to mold pressing;G, described aging step be, the workpiece after mold pressing step is sent in baking oven to drying 3.5 ~ 4.5 hours, and temperature is controlled within the scope of 160 ~ 170 ℃, implements burin-in process;H, described plating step are, oxide layer is removed respectively in the surface of the second lead-in wire (3-1) of the first lead-in wire (2-1) of first copper electrode (2) of the workpiece after aging step and the second copper electrode (3), and at the surface of the first lead-in wire (2-1) and the second lead-in wire (3-1) difference electrotinning, make axial diode.
- 2. the preparation method that protection glue-line according to claim 1 is the axial diode of polyimides glue, is characterized in that: in described gluing steps d, also comprise secondary gluing; Described secondary gluing is after coating polyimide glue again, by workpiece through infrared lamp according to 0.5 ~ 1 hour, and then put into baking oven drying 0.6 ~ 1.5 hour, temperature is controlled within the scope of 105 ~ 115 ℃.
- 3. the preparation method that protection glue-line according to claim 1 is the axial diode of polyimides glue, is characterized in that: purity >=99.5% of the isopropyl alcohol described in described acid pickling step c.
- 4. the preparation method that protection glue-line according to claim 1 is the axial diode of polyimides glue, it is characterized in that: the removal oxide layer in described plating h step, that described the first lead-in wire (2-1) and the second lead-in wire (3-1) are put into 5H immersion bubble 10 ~ 40 minutes, then put into dilute sulfuric acid and soak 5 ~ 10 minutes, and the oxide layer on removal the first lead-in wire (2-1) and the second lead-in wire (3-1) surface; Described 5H liquid is by Na 3pO 4: NaHCO 3: NaOH is 8 ~ 12: 18 ~ 22 by weight: 68 ~ 72 is formulated; Described dilute sulfuric acid is to be that 0.8 ~ 1.2: 50 ~ 100 dilutions form by weight by the conventional sulfuric acid using of semicon industry and water.
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| CN201210164054.2A CN102651404B (en) | 2012-05-25 | 2012-05-25 | Axial diode and fabrication method of axial diode with polyimide glue as protection glue layer |
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| CN201210164054.2A CN102651404B (en) | 2012-05-25 | 2012-05-25 | Axial diode and fabrication method of axial diode with polyimide glue as protection glue layer |
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