CN106252207A - A kind of diode chip assembly acid cleaning process - Google Patents
A kind of diode chip assembly acid cleaning process Download PDFInfo
- Publication number
- CN106252207A CN106252207A CN201610795566.7A CN201610795566A CN106252207A CN 106252207 A CN106252207 A CN 106252207A CN 201610795566 A CN201610795566 A CN 201610795566A CN 106252207 A CN106252207 A CN 106252207A
- Authority
- CN
- China
- Prior art keywords
- diode chip
- chip assembly
- acid
- cleaning process
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000002253 acid Substances 0.000 title claims abstract description 22
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000007788 liquid Substances 0.000 claims abstract description 35
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 28
- 238000005507 spraying Methods 0.000 claims abstract description 21
- 238000002161 passivation Methods 0.000 claims abstract description 13
- 239000007921 spray Substances 0.000 claims abstract description 12
- 230000007797 corrosion Effects 0.000 claims abstract description 6
- 238000005260 corrosion Methods 0.000 claims abstract description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 30
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 18
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 15
- 239000012530 fluid Substances 0.000 claims description 13
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 12
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 9
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 9
- 239000008367 deionised water Substances 0.000 claims description 7
- 229910021641 deionized water Inorganic materials 0.000 claims description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- 229910021529 ammonia Inorganic materials 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- 238000002242 deionisation method Methods 0.000 claims description 5
- 239000001117 sulphuric acid Substances 0.000 claims description 3
- 235000011149 sulphuric acid Nutrition 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims 1
- 239000012535 impurity Substances 0.000 abstract description 11
- 239000004065 semiconductor Substances 0.000 abstract description 9
- 239000003814 drug Substances 0.000 abstract description 8
- 239000000047 product Substances 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000007795 chemical reaction product Substances 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 12
- 238000007654 immersion Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
Abstract
The invention belongs to semiconductor diode production technical field, specifically a kind of diode chip assembly acid cleaning process.The diode chip assembly acid cleaning process of the present invention, by improving corrosive liquid spraying time, makes the corrosion of diode chip assembly more thorough.By improving the passivation temperature of passivating solution, improve passivation effect, improve diode product parameters concordance.In burn into passivation and cleaning process, use spray pattern to apply medicament, improve processing effect on the whole.Add rinse cycle after cleaning, eliminate the medicament of diode chip assembly remained on surface, prevent from subsequent technique, diode end product quality being impacted.By ultrasonic waves for cleaning, the impurity that surface is bonding can be removed, improve the cleannes of diode chip assembly further.Alcohol washes again after anhydrating, on the one hand ethanol and water can remove the water on diode chip surface, and by the way of air-dried, ethanol quickly volatilizees, and make the diode chip can be with rapid draing.
Description
Technical field
The invention belongs to semiconductor diode production technical field, specifically a kind of diode chip assembly acid cleaning process.
Background technology
Semiconductor diode, is electronic component conventional in electronic circuit, can be applicable to the circuit such as rectification, detection, amplitude limit
In.In semiconductor diode production process, the tube core of semiconductor diode is made up of wafer, and usual wafer has very
Multiple diode unit.By wafer is cut, diode chip can be obtained, then the tube core of diode is pressed certain forms
Encapsulation i.e. can obtain the diode used in electronic circuit.When being packaged, need the pin form by soldering,
It is welded to two leading-out terminals of tube core.After being welded with pin by tube core, obtain semiconductor diode die assembly.At quasiconductor
The when of diode chip welding pin, need to use scaling powder, cause the semiconductor diode die being welded out total
Become containing certain pollution impurity.Pollution impurity meeting if not being carried out being put into Plastic Package link, on tube core assembly
Have influence on the electrical property of semiconductor diode P-N junction.At present in commercial production, conventional acid washing method, usually because cleaning not
Thoroughly, thus cause produced semiconductor diode quality unstable.
Summary of the invention
The present invention is directed to above-mentioned deficiency, it is provided that a kind of diode chip assembly acid cleaning process.
A kind of diode chip assembly acid cleaning process, comprises the following steps:
S1, corrodes diode chip assembly, used corrosive liquid be nitric acid, Fluohydric acid., acetic acid, sulphuric acid by volume
Mixing than 9: 9: 14: 4, the concentration of nitric acid used in it is 69%, and the hydrofluoric acid concentration used is 40%, is used
Acetic acid concentration be 98%, the sulfuric acid concentration used is 98.3%, corrosive liquid use spray pattern apply, corrosive liquid temperature is
10-20 degree, the corrosive liquid spraying time 100-150 second；
S2, is passivated the diode chip assembly after corrosion, and used passivating solution is phosphoric acid, hydrogen peroxide, deionization
Water mixes by volume at 1: 1: 4.5, and used phosphoric acid concentration is 75-85%, and used hydrogen peroxide concentration is 25-35%,
Passivating solution uses spray pattern to apply, and used passivating solution temperature is 60-70 degree, and passivating solution spraying time is the 50-75 second；
S3, is carried out the diode chip assembly after passivation, and institute's employing cleanout fluid is ammonia, hydrogen peroxide, deionization
Water mixes by volume at 1: 1: 18, and the ammonia concn used is 15%, and used hydrogen peroxide concentration is 30%, cleanout fluid
Employing spray pattern applies, and used rinse liquid temperature is 15-20 degree, and cleanout fluid spraying time is the 100-150 second；
S4, the diode chip assembly after cleaning rinses, and the rinsing liquid used is deionized water, and rinsing uses
Immersion way is carried out, and used rinsing liquid uses circulation update mode；
S5, carries out ultrasonic waves for cleaning by the diode chip assembly after rinsing, and the abluent that ultrasonic waves for cleaning uses is for going
Ion is not；
S6, removes the diode chip assembly after ultrasonic waves for cleaning to moisture removal；
S7, the diode chip after anhydrating uses alcohol washes, and the ethanol purity that alcohol washes is used is more than 97%；
S8, removes ethanol by the diode chip assembly after alcohol washes at dustless room-dry.
Further, in S1 step, corrosive liquid temperature is 15 degree, corrosive liquid spraying time 130 seconds.
Further, S6 step go moisture removal to use centrifugal water removing machine.
Further, in S2 step, used phosphoric acid concentration is 80%, and used hydrogen peroxide concentration is 30%, is used blunt
Changing liquid temp is 65 degree, and passivating solution spraying time is 65 seconds.
Further, in S3 step, used rinse liquid temperature is 18 degree, and cleanout fluid spraying time is 130 seconds.
The diode chip assembly acid cleaning process of the present invention, by improving corrosive liquid spraying time, makes diode chip total
Become corrosion more thorough, more effectively remove the impurity on diode chip assembly surface.By improving the passivation temperature of passivating solution, carry
High passivation effect, improves diode product parameters concordance.In burn into passivation and cleaning process, use spray pattern
Applying medicament, contacted due to diode chip assembly is all fresh medicament, improves processing effect on the whole.After cleaning
Add rinse cycle, eliminate the medicament of diode chip assembly remained on surface, prevent from subsequent technique, diode being become
Quality impacts.By ultrasonic waves for cleaning, the impurity that surface is bonding can be removed, also and cannot rush with water in some dead angles
The impurity washed off, improves the cleannes of diode chip assembly further.Alcohol washes again after anhydrating, on the one hand ethanol and water can
To remove the water on diode chip surface, on the other hand, ethanol can also easy some impurity, improve cleaning performance further.
After alcohol washes terminates, by the way of air-dried, ethanol quickly volatilizees, and makes the diode chip can be with rapid draing.
The diode chip assembly acid cleaning process of the present invention, obtained diode product parameters concordance is high.
Detailed description of the invention
A kind of diode chip assembly acid cleaning process, comprises the following steps:
S1, corrodes diode chip assembly, used corrosive liquid be nitric acid, Fluohydric acid., acetic acid, sulphuric acid by volume
Mixing than 9: 9: 14: 4, the concentration of nitric acid used in it is 69%, and the hydrofluoric acid concentration used is 40%, is used
Acetic acid concentration be 98%, the sulfuric acid concentration used is 98.3%, corrosive liquid use spray pattern apply, corrosive liquid temperature is
10-20 degree, the corrosive liquid spraying time 100-150 second；
S2, is passivated the diode chip assembly after corrosion, and used passivating solution is phosphoric acid, hydrogen peroxide, deionization
Water mixes by volume at 1: 1: 4.5, and used phosphoric acid concentration is 75-85%, and used hydrogen peroxide concentration is 25-35%,
Passivating solution uses spray pattern to apply, and used passivating solution temperature is 60-70 degree, and passivating solution spraying time is the 50-75 second；
S3, is carried out the diode chip assembly after passivation, and institute's employing cleanout fluid is ammonia, hydrogen peroxide, deionization
Water mixes by volume at 1: 1: 18, and the ammonia concn used is 15%, and used hydrogen peroxide concentration is 30%, cleanout fluid
Employing spray pattern applies, and used rinse liquid temperature is 15-20 degree, and cleanout fluid spraying time is the 100-150 second；
S4, the diode chip assembly after cleaning rinses, and the rinsing liquid used is deionized water, and rinsing uses
Immersion way is carried out, and used rinsing liquid uses circulation update mode；
Circulation update mode of the present invention, is in cleaning process, supplements deionized water, in container for disconnected
Portion, relative to the far-end of water filling port, arranges outlet, and water injection rate is identical with water yield, and the deionized water total amount in container is constant.
Outlet is arranged at inside container, relative to the far-end of water filling port, water can be made to be circulated, be unlikely to the water horse just injected
On drained by outlet.
S5, carries out ultrasonic waves for cleaning by the diode chip assembly after rinsing, and the abluent that ultrasonic waves for cleaning uses is for going
Ion is not；
S6, removes the diode chip assembly after ultrasonic waves for cleaning to moisture removal；
S7, the diode chip after anhydrating uses alcohol washes, and the ethanol purity that alcohol washes is used is more than 97%；
S8, removes ethanol by the diode chip assembly after alcohol washes at dustless room-dry.
Further, in S1 step, corrosive liquid temperature is 15 degree, corrosive liquid spraying time 130 seconds.
Further, S6 step go moisture removal to use centrifugal water removing machine.
Further, in S2 step, used phosphoric acid concentration is 80%, and used hydrogen peroxide concentration is 30%, is used blunt
Changing liquid temp is 65 degree, and passivating solution spraying time is 65 seconds.
Further, in S3 step, used rinse liquid temperature is 18 degree, and cleanout fluid spraying time is 130 seconds.
The diode chip assembly acid cleaning process of the present invention, by improving corrosive liquid spraying time, makes diode chip total
Become corrosion more thorough, more effectively remove the impurity on diode chip assembly surface.By improving the passivation temperature of passivating solution, carry
High passivation effect, improves diode product parameters concordance.In burn into passivation and cleaning process, use spray pattern
Applying medicament, contacted due to diode chip assembly is all fresh medicament, improves processing effect on the whole.After cleaning
Add rinse cycle, eliminate the medicament of diode chip assembly remained on surface, prevent from subsequent technique, diode being become
Quality impacts.By ultrasonic waves for cleaning, the impurity that surface is bonding can be removed, also and cannot rush with water in some dead angles
The impurity washed off, improves the cleannes of diode chip assembly further.Alcohol washes again after anhydrating, on the one hand ethanol and water can
To remove the water on diode chip surface, on the other hand, ethanol can also easy some impurity, improve cleaning performance further.
After alcohol washes terminates, by the way of air-dried, ethanol quickly volatilizees, and makes the diode chip can be with rapid draing.
The diode chip assembly acid cleaning process of the present invention, obtained diode product parameters concordance is high.
Claims (5)
1. a diode chip assembly acid cleaning process, comprises the following steps:
S1, corrodes diode chip assembly, and used corrosive liquid is nitric acid, Fluohydric acid., acetic acid, sulphuric acid by volume 9:
Mix at 9: 14: 4, and the concentration of nitric acid used in it is 69%, and the hydrofluoric acid concentration used is 40%, the second used
Acid concentration is 98%, and the sulfuric acid concentration used is 98.3%, and corrosive liquid uses spray pattern to apply, and corrosive liquid temperature is 10-
20 degree, the corrosive liquid spraying time 100-150 second；
S2, will corrosion after diode chip assembly be passivated, used passivating solution be phosphoric acid, hydrogen peroxide, deionized water by
Volume ratio 1: 1: 4.5 mixes, and used phosphoric acid concentration is 75-85%, and used hydrogen peroxide concentration is 25-35%, passivation
Liquid uses spray pattern to apply, and used passivating solution temperature is 60-70 degree, and passivating solution spraying time is the 50-75 second；
S3, will passivation after diode chip assembly be carried out, institute's employing cleanout fluid be ammonia, hydrogen peroxide, deionized water by
Volume ratio 1: 1: 18 mixes, and the ammonia concn used is 15%, and used hydrogen peroxide concentration is 30%, and cleanout fluid uses
Spray pattern applies, and used rinse liquid temperature is 15-20 degree, and cleanout fluid spraying time is the 100-150 second；
S4, the diode chip assembly after cleaning rinses, and the rinsing liquid used is deionized water, and rinsing uses soaks
Mode is carried out, and used rinsing liquid uses circulation update mode；
S5, carries out ultrasonic waves for cleaning by the diode chip assembly after rinsing, and the abluent that ultrasonic waves for cleaning uses is deionization
No；
S6, removes the diode chip assembly after ultrasonic waves for cleaning to moisture removal；
S7, the diode chip after anhydrating uses alcohol washes, and the ethanol purity that alcohol washes is used is more than 97%；
S8, removes ethanol by the diode chip assembly after alcohol washes at dustless room-dry.
Diode chip assembly acid cleaning process the most according to claim 1, is characterized in that, in S1 step, corrosive liquid temperature is
15 degree, corrosive liquid spraying time 130 seconds.
Diode chip assembly acid cleaning process the most according to claim 1, is characterized in that, S6 step in go moisture removal use from
Core type water removing machine.
Diode chip assembly acid cleaning process the most according to claim 2, is characterized in that, in S2 step, used phosphoric acid is dense
Degree is 80%, and used hydrogen peroxide concentration is 30%, and used passivating solution temperature is 65 degree, and passivating solution spraying time is 65 seconds.
Diode chip assembly acid cleaning process the most according to claim 4, is characterized in that, in S3 step, and institute's use cleanout fluid
Temperature is 18 degree, and cleanout fluid spraying time is 130 seconds.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610795566.7A CN106252207B (en) | 2016-08-31 | 2016-08-31 | A kind of diode chip assembly acid cleaning process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610795566.7A CN106252207B (en) | 2016-08-31 | 2016-08-31 | A kind of diode chip assembly acid cleaning process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106252207A true CN106252207A (en) | 2016-12-21 |
| CN106252207B CN106252207B (en) | 2019-05-24 |
Family
ID=58080865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610795566.7A Active CN106252207B (en) | 2016-08-31 | 2016-08-31 | A kind of diode chip assembly acid cleaning process |
Country Status (1)
| Country | Link |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108389781A (en) * | 2018-03-05 | 2018-08-10 | 广东先导先进材料股份有限公司 | The method of clean and reuse wafer cassette or casey |
| CN108493109A (en) * | 2018-05-21 | 2018-09-04 | 李慧 | A kind of production method of semiconductor diode |
| CN111739789A (en) * | 2020-06-30 | 2020-10-02 | 安徽安美半导体有限公司 | Reworking and cleaning process of diode |
| CN113751443A (en) * | 2020-06-02 | 2021-12-07 | 武义鹏盛工贸有限公司 | Cup cleaning process |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0165418B1 (en) * | 1995-07-20 | 1999-02-01 | 김광호 | Drying method of semiconductor device |
| CN101017772A (en) * | 2007-02-27 | 2007-08-15 | 江苏佳讯电子有限公司 | The cleaning method for removing the impure ion from the semiconductor pipe core assembly |
| CN101017773A (en) * | 2007-02-27 | 2007-08-15 | 江苏佳讯电子有限公司 | Processing method for the semiconductor pipe core assembly crystal surface |
-
2016
- 2016-08-31 CN CN201610795566.7A patent/CN106252207B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0165418B1 (en) * | 1995-07-20 | 1999-02-01 | 김광호 | Drying method of semiconductor device |
| CN101017772A (en) * | 2007-02-27 | 2007-08-15 | 江苏佳讯电子有限公司 | The cleaning method for removing the impure ion from the semiconductor pipe core assembly |
| CN101017773A (en) * | 2007-02-27 | 2007-08-15 | 江苏佳讯电子有限公司 | Processing method for the semiconductor pipe core assembly crystal surface |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108389781A (en) * | 2018-03-05 | 2018-08-10 | 广东先导先进材料股份有限公司 | The method of clean and reuse wafer cassette or casey |
| CN108493109A (en) * | 2018-05-21 | 2018-09-04 | 李慧 | A kind of production method of semiconductor diode |
| CN108493109B (en) * | 2018-05-21 | 2021-03-19 | 上海朋熙半导体有限公司 | Production method of semiconductor diode |
| CN113751443A (en) * | 2020-06-02 | 2021-12-07 | 武义鹏盛工贸有限公司 | Cup cleaning process |
| CN111739789A (en) * | 2020-06-30 | 2020-10-02 | 安徽安美半导体有限公司 | Reworking and cleaning process of diode |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106252207B (en) | 2019-05-24 |
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