CN103346082B - Alkali pretreatment before high-voltage diode mesa passivation - Google Patents
Alkali pretreatment before high-voltage diode mesa passivation Download PDFInfo
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- CN103346082B CN103346082B CN201310255771.0A CN201310255771A CN103346082B CN 103346082 B CN103346082 B CN 103346082B CN 201310255771 A CN201310255771 A CN 201310255771A CN 103346082 B CN103346082 B CN 103346082B
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Abstract
The invention discloses the alkali pretreatment before a kind of high-voltage diode mesa passivation of manufacture field of electronic elements. For improving the reverse breakdown characteristics of diode goods, improve " soft breakdown " phenomenon, improve product testing yield rate, carry out after the vertical sintering of sour, chip and lead wire set at diode chip for backlight unit, import a kind of novel caustic corrosion treatment process, the dyeing silicon fiml that may produce at the shallow table of table top to remove chip acid corrosion, improves the adherence of table top gluing. After mesa passivation, can effectively improve the reverse breakdown characteristics of device, thereby finally improve product testing electrical property qualification rate. The present invention has the advantages such as the test yield that technique is reasonable, efficiency is high and improve goods.
Description
Technical field
The present invention relates to the alkali pretreatment before a kind of high-voltage diode mesa passivation of field of electronic components manufacturing.
Background technology
Electronic product is widely used in all trades and professions, and semiconductor components and devices is the critical piece that electronic product is produced, high pressure twoUtmost point pipe is exactly conventional semiconductor rectifier device, electronic circuit design in often can use oppositely hitting of high-voltage diodeWear characteristic, in long-term production and Process Exploration, we find that plastic packaging high-voltage diode before mesa passivation as only uses sourErosion, often there is passivation after reverse breakdown characteristics curve deteriorated, reverse breakdown flex point is not hard breakdown, curve is also unstable sometimesFixed, there is jumping phenomena, thereby have a strong impact on product quality and reliability, greatly reduce yield rate, and adopt alkali before mesa passivationAfter etching process, solve well this problem.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, invent cleaning place before a kind of high-voltage diode mesa passivationScience and engineering skill, to improve the reverse breakdown characteristics of goods, improves " soft breakdown " phenomenon, improves product testing yield rate.
The present invention is achieved by the following technical solutions:
Concrete technology step is as follows:
1) mould of plastics that lead-in wire-silico briquette sintered component is housed is placed on alkali treatment special stainless steel bracket;
2) in alkali treatment device the one NaOH groove, the 2nd NaOH groove, prepare respectively 12 ± 1% and 4 ± 0.5% NaOHSolution, and be heated to (70 ± 2) DEG C;
3) bracket that sintered component is housed is suspended in the swing arm of a NaOH groove top, bracket is immersed in NaOH groove,Corrode by swing, etching time is 200s;
4) bracket NaOH groove corrosion being completed is put into rapidly in the 2nd NaOH groove, corrodes corruption by swingThe erosion time is 200s;
5) bracket the 2nd NaOH groove internal corrosion being completed is put into the first pure water drip washing groove, pure water flow (8 ± 1) L/Min, the pure water drip washing time is 200s;
6) bracket that in the first pure water drip washing groove, drip washing completes is moved in the first soaker to pure water flow (10 ± 1) L/Min, the pure water time of embathing is 200s, rear drainage;
7) bracket having embathed is put into triammonium citrate groove immersion treatment, triammonium citrate concentration of aqueous solution is 8± 0.5%. Soak time is 200s;
8) bracket immersion being completed moves on in the second pure water drip washing groove, pure water flow (8 ± 1) L/min, and the drip washing time is200s；
9) bracket drip washing being completed moves in pure water ultrasonic cleaning tank, and pure water flow is (10 ± 1) L/min, cleans superSound scavenging period is 200s;
10) bracket is moved in the second soaker, pure water flow (10 ± 1) the L/min. time of embathing is 200s, drainage,And dry up the globule of bracket surrounding with air gun;
11) bracket is dipped in to the first acetone groove and carries out processed, the acetone in acetone groove floods bracket completely, when dehydrationBetween be 200s;
12) bracket is dipped in the second acetone groove, the acetone in acetone groove floods bracket completely, and dewatering time is 200s,Be filtered dry;
13) bracket is placed on and on dry conveyer belt, carries out N2 and dry up, set N2Flow >=300L/min, line speed80mm/min, dry complete, bracket is taken out from conveyer belt, mould is taken off from bracket, put into N2 Storage Cabinets, N2Storage Cabinets N2Flow >=20L/min, next step carries out the passivation of die surfaces gluing the good parts of alkali treatment.
The present invention compared with prior art has following beneficial effect:
1. technique is reasonable, efficiency is high;
2. improve goods reverse breakdown characteristics, improve the test yield of goods.
Brief description of the drawings
Fig. 1 is the alkali pretreatment flow chart before high-voltage diode mesa passivation.
Detailed description of the invention
Below in conjunction with accompanying drawing, content of the present invention is described further:
Be illustrated in figure 1 the alkali pretreatment flow chart before high-voltage diode mesa passivation,
For improving the reverse breakdown characteristics of high-voltage diode goods, improve " soft breakdown " phenomenon, improve product testing finished productRate, carries out, after the vertical sintering of sour, chip and lead wire set, importing a kind of novel caustic corrosion treatment process at diode chip for backlight unit, withRemove the dyeing silicon fiml that chip acid corrosion may produce at the shallow table of table top, improve the adherence of table top gluing. Through mesa passivationAfter can effectively improve the reverse breakdown characteristics of device, thereby finally improve product testing electrical property qualification rate.
Concrete technology step is as follows:
1) mould of plastics that lead-in wire-silico briquette sintered component is housed is placed on alkali treatment special stainless steel bracket;
2) in alkali treatment device the one NaOH groove, the 2nd NaOH groove, prepare respectively 12 ± 1% and 4 ± 0.5% NaOHSolution, and be heated to (70 ± 2) DEG C;
3) bracket that sintered component is housed is suspended in the swing arm of a NaOH groove top, bracket is immersed in NaOH groove,Corrode by swing, etching time is 200s;
4) bracket NaOH groove corrosion being completed is put into rapidly in the 2nd NaOH groove, corrodes corruption by swingThe erosion time is 200s;
5) bracket the 2nd NaOH groove internal corrosion being completed is put into the first pure water drip washing groove, pure water flow (8 ± 1) L/Min, the pure water drip washing time is 200s;
6) bracket that in the first pure water drip washing groove, drip washing completes is moved in the first soaker to pure water flow (10 ± 1) L/Min, the pure water time of embathing is 200s, rear drainage;
7) bracket having embathed is put into triammonium citrate groove immersion treatment, triammonium citrate concentration of aqueous solution is 8± 0.5%. Soak time is 200s;
8) bracket immersion being completed moves on in the second pure water drip washing groove, pure water flow (8 ± 1) L/min, and the drip washing time is200s；
9) bracket drip washing being completed moves in pure water ultrasonic cleaning tank, and pure water flow is (10 ± 1) L/min, cleans superSound scavenging period is 200s;
10) bracket is moved in the second soaker, pure water flow (10 ± 1) the L/min. time of embathing is 200s, drainage,And dry up the globule of bracket surrounding with air gun;
11) bracket is dipped in to the first acetone groove and carries out processed, the acetone in acetone groove floods bracket completely, when dehydrationBetween be 200s;
12) bracket is dipped in the second acetone groove, the acetone in acetone groove floods bracket completely, and dewatering time is 200s; ,Be filtered dry;
13) bracket is placed on and on dry conveyer belt, carries out N2 and dry up, set N2Flow >=300L/min, line speed80mm/min, dry complete, bracket is taken out from conveyer belt, mould is taken off from bracket, put into N2 Storage Cabinets, N2Storage Cabinets N2Flow >=20L/min, next step can carry out the passivation of die surfaces gluing the good parts of alkali treatment.
Claims (1)
1. the alkali pretreatment before high-voltage diode mesa passivation, is characterized in that: processing step is as follows:
1) mould of plastics that lead-in wire-silico briquette sintered component is housed is placed on alkali treatment special stainless steel bracket;
2) in alkali treatment device the one NaOH groove, the 2nd NaOH groove, prepare respectively 12 ± 1% and 4 ± 0.5% NaOH moltenLiquid, and be heated to (70 ± 2) DEG C;
3) bracket that sintered component is housed is suspended in the swing arm of a NaOH groove top, bracket is immersed in NaOH groove, pass throughSwing is corroded, and etching time is 200s;
4) bracket NaOH groove corrosion being completed is put into rapidly in the 2nd NaOH groove, corrodes, when corrosion by swingBetween be 200s;
5) bracket the 2nd NaOH groove internal corrosion being completed is put into the first pure water drip washing groove, and pure water flow (8 ± 1) L/min is pureThe water wash time is 200s;
6) bracket that in the first pure water drip washing groove, drip washing completes is moved in the first soaker, pure water flow (10 ± 1) L/min,The pure water time of embathing is 200s, rear drainage;
7) bracket having embathed is put into triammonium citrate groove immersion treatment, triammonium citrate concentration of aqueous solution is 8 ±0.5%, soak time is 200s;
8) bracket immersion being completed moves on in the second pure water drip washing groove, pure water flow (8 ± 1) L/min, and the drip washing time is200s；
9) bracket drip washing being completed moves in pure water ultrasonic cleaning tank, and pure water flow is (10 ± 1) L/min, cleans ultrasonic clearThe time of washing is 200s;
10) bracket is moved in the second soaker, pure water flow (10 ± 1) the L/min time of embathing is 200s, drainage, and use gasRifle dries up the globule of bracket surrounding;
11) bracket is dipped in to the first acetone groove and carries out processed, the acetone in acetone groove floods bracket completely, and dewatering time is200s；
12) bracket is dipped in the second acetone groove, the acetone in acetone groove floods bracket completely, and dewatering time is 200s, is filtered dry;
13) bracket is placed on dry conveyer belt and carries out N2Dry up, set N2Flow >=300L/min, line speed 80mm/Min, dry complete, bracket is taken out from conveyer belt, mould is taken off from bracket, put into N2In Storage Cabinets, N2Storage Cabinets N2Flow >=20L/min, next step can carry out the passivation of die surfaces gluing the good parts of alkali treatment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310255771.0A CN103346082B (en) | 2013-06-25 | 2013-06-25 | Alkali pretreatment before high-voltage diode mesa passivation |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310255771.0A CN103346082B (en) | 2013-06-25 | 2013-06-25 | Alkali pretreatment before high-voltage diode mesa passivation |
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| CN103346082A CN103346082A (en) | 2013-10-09 |
| CN103346082B true CN103346082B (en) | 2016-05-25 |
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| CN107507760B (en) * | 2017-07-28 | 2020-01-21 | 阳信金鑫电子有限公司 | Surface cleaning method for silicon dioxide chip in diode manufacturing |
| CN109454051B (en) * | 2018-10-25 | 2021-07-23 | 南通皋鑫电子股份有限公司 | ME treatment process of 2CL91 type component |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101087007A (en) * | 2007-05-11 | 2007-12-12 | 上海明兴开城超音波科技有限公司 | Chemical etching, cleaning and drying method of single-crystal silicon solar battery and integrated processing machine |
| CN201655762U (en) * | 2010-04-26 | 2010-11-24 | 贵州雅光电子科技股份有限公司 | Alkali etching machine for diode |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3129083B2 (en) * | 1994-05-10 | 2001-01-29 | 富士電機株式会社 | Method for manufacturing semiconductor device |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101087007A (en) * | 2007-05-11 | 2007-12-12 | 上海明兴开城超音波科技有限公司 | Chemical etching, cleaning and drying method of single-crystal silicon solar battery and integrated processing machine |
| CN201655762U (en) * | 2010-04-26 | 2010-11-24 | 贵州雅光电子科技股份有限公司 | Alkali etching machine for diode |
Non-Patent Citations (1)
| Title |
|---|
| "半导体器件制造中的碱腐蚀";宾雪生;《半导体技术》;19960229(第1期);第55-56页 * |
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Effective date of registration: 20210902 Address after: 226503 No. 82, Zhongshan West Road, Rucheng street, Rugao City, Nantong City, Jiangsu Province Patentee after: Jiangsu Gaoxin Electronics Co.,Ltd. Address before: 226502 No. 82, Zhongshan West Road, Rucheng, Rugao, Nantong, Jiangsu Patentee before: NANTONG GAOXIN ELECTRONICS Co.,Ltd. |
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