CN103346082A - Alkali treatment process before table-board passivation of high-voltage diode - Google Patents
Alkali treatment process before table-board passivation of high-voltage diode Download PDFInfo
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- CN103346082A CN103346082A CN2013102557710A CN201310255771A CN103346082A CN 103346082 A CN103346082 A CN 103346082A CN 2013102557710 A CN2013102557710 A CN 2013102557710A CN 201310255771 A CN201310255771 A CN 201310255771A CN 103346082 A CN103346082 A CN 103346082A
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Abstract
The invention discloses an alkali treatment process before table-board passivation of a high-voltage diode, and belongs to the field of electronic component manufacturing. In order to improve reverse breakdown characteristics of diode products, improve a soft breakdown phenomenon, improve the rate of finished products in tests, after acid corrosion is carried out on diode chips and vertical sintering is carried out on the chips and a lead wiring set, a novel alkali etch treatment process is introduced to remove a dyeing silicon film might generated on the shallow surface of a table board by chip acid corrosion, and improve adherence of surface sizing of the table board. The reverse breakdown characteristics of components can be effectively improved after the table-board passivation, and therefore the pass rate of electrical performance tests is finally improved. The alkali treatment process before table-board passivation of the high-voltage diode has the advantages of being reasonable in process and high in efficiency, and improving the rate of the finished products in the tests.
Description
Technical field
The present invention relates to the preceding alkali pretreatment of a kind of high-voltage diode mesa passivation of field of electronic components manufacturing.
Background technology
Electronic product is widely used in all trades and professions; semiconductor components and devices is the critical piece that electronic product is produced; high-voltage diode is exactly the semiconductor rectifier device of using always; electronic circuit design in often can use the reverse breakdown characteristics of high-voltage diode; we find the plastic packaging high-voltage diode before mesa passivation as only use acid corrosion in long-term production and technology are explored; reverse breakdown characteristics curve deterioration after the normal generation passivation; be that the reverse breakdown flex point is not hard breakdown; sometimes curve is also unstable; jumping phenomena is arranged; thereby have a strong impact on product quality and reliability; reduce rate of finished products greatly, then solved this problem well after the employing caustic corrosion technology before the mesa passivation.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art, invent the preceding clean technology of a kind of high-voltage diode mesa passivation, to improve the reverse breakdown characteristics of goods, improve " soft breakdown " phenomenon, improve the product testing rate of finished products.
The present invention is achieved by the following technical solutions:
Concrete processing step is as follows:
1) mould of plastics that lead-in wire-silico briquette sintered component will be housed is placed on the alkali treatment special stainless steel carriage;
2) in alkali treatment device the one NaOH groove, the 2nd NaOH groove, prepare 12 ± 1% and 4 ± 0.5% NaOH solution respectively, and be heated to (70 ± 2) ℃;
3) carriage that sintered component will be housed is suspended in the swing arm of NaOH groove top, and carriage is immersed in the NaOH groove, corrodes by swing, and etching time is 200s;
4) carriage that a NaOH groove corrosion is finished is put into rapidly in the 2nd NaOH groove, corrodes by swing, and etching time is 200s;
5) carriage that the 2nd NaOH groove internal corrosion is finished is put into the first pure water drip washing groove, pure water flow (8 ± 1) L/min, and the pure water drip washing time is 200s;
6) carriage that drip washing in the first pure water drip washing groove is finished moves in first soaker, pure water flow (10 ± 1) L/min, and the pure water time of embathing is 200s, back drainage;
7) will embathe the carriage of finishing and put into triammonium citrate groove immersion treatment, the triammonium citrate concentration of aqueous solution is 8 ± 0.5%.Soak time is 200s;
8) carriage that immersion is finished moves on in the second pure water drip washing groove, pure water flow (8 ± 1) L/min, and the drip washing time is 200s;
9) carriage that drip washing is finished moves in the pure water ultrasonic cleaning tank, and the pure water flow is (10 ± 1) L/min, and cleaning the ultrasonic cleaning time is 200s;
10) carriage is moved in second soaker, pure water flow (10 ± 1) the L/min. time of embathing is 200s, drainage, and dry up the globule around the carriage with air gun;
11) carriage is dipped in the first acetone groove and carries out processed, the acetone in the acetone groove floods carriage fully, and dewatering time is 200s;
12) carriage is dipped in the second acetone groove, the acetone in the acetone groove floods carriage fully, and dewatering time is 200s, and filter is done;
13) carriage is placed on carries out N2 on the dry conveyer belt and dry up, set N
2Flow 〉=300L/min, line speed 80mm/min, drying finishes, and carriage is taken out from conveyer belt, and mould is taken off from carriage, puts into the N2 Storage Cabinets, N2 Storage Cabinets N
2Flow 〉=20L/min, next step then carries out the passivation of die surfaces gluing the good parts of alkali treatment.
The present invention compared with prior art has following beneficial effect:
1. technology is reasonable, efficient is high;
2. improve the goods reverse breakdown characteristics, improve the test yield of goods.
Description of drawings
Fig. 1 is the alkali pretreatment flow chart before the high-voltage diode mesa passivation.
Embodiment
Below in conjunction with accompanying drawing content of the present invention is described further:
Be illustrated in figure 1 as the preceding alkali pretreatment flow chart of high-voltage diode mesa passivation,
For improving the reverse breakdown characteristics of high-voltage diode goods, improve " soft breakdown " phenomenon, improve the product testing rate of finished products, after diode chip for backlight unit carries out the upright sintering of sour, chip and lead wire set, import a kind of novel caustic corrosion treatment process, may improve the adherence of table top gluing at the dyeing silicon fiml of the shallow table generation of table top to remove the chip acid corrosion.Can effectively improve the reverse breakdown characteristics of device through behind the mesa passivation, thereby finally improve product testing electrical property qualification rate.
Concrete processing step is as follows:
1) mould of plastics that lead-in wire-silico briquette sintered component will be housed is placed on the alkali treatment special stainless steel carriage;
2) in alkali treatment device the one NaOH groove, the 2nd NaOH groove, prepare 12 ± 1% and 4 ± 0.5% NaOH solution respectively, and be heated to (70 ± 2) ℃;
3) carriage that sintered component will be housed is suspended in the swing arm of NaOH groove top, and carriage is immersed in the NaOH groove, corrodes by swing, and etching time is 200s;
4) carriage that a NaOH groove corrosion is finished is put into rapidly in the 2nd NaOH groove, corrodes by swing, and etching time is 200s;
5) carriage that the 2nd NaOH groove internal corrosion is finished is put into the first pure water drip washing groove, pure water flow (8 ± 1) L/min, and the pure water drip washing time is 200s;
6) carriage that drip washing in the first pure water drip washing groove is finished moves in first soaker, pure water flow (10 ± 1) L/min, and the pure water time of embathing is 200s, back drainage;
7) will embathe the carriage of finishing and put into triammonium citrate groove immersion treatment, the triammonium citrate concentration of aqueous solution is 8 ± 0.5%.Soak time is 200s;
8) carriage that immersion is finished moves on in the second pure water drip washing groove, pure water flow (8 ± 1) L/min, and the drip washing time is 200s;
9) carriage that drip washing is finished moves in the pure water ultrasonic cleaning tank, and the pure water flow is (10 ± 1) L/min, and cleaning the ultrasonic cleaning time is 200s;
10) carriage is moved in second soaker, pure water flow (10 ± 1) the L/min. time of embathing is 200s, drainage, and dry up the globule around the carriage with air gun;
11) carriage is dipped in the first acetone groove and carries out processed, the acetone in the acetone groove floods carriage fully, and dewatering time is 200s;
12) carriage is dipped in the second acetone groove, the acetone in the acetone groove floods carriage fully, and dewatering time is 200s; , filter is done;
13) carriage is placed on carries out N2 on the dry conveyer belt and dry up, set N
2Flow 〉=300L/min, line speed 80mm/min, drying finishes, and carriage is taken out from conveyer belt, and mould is taken off from carriage, puts into the N2 Storage Cabinets, N2 Storage Cabinets N
2Flow 〉=20L/min, next step then can carry out the passivation of die surfaces gluing the good parts of alkali treatment.
Claims (1)
1. the alkali pretreatment before the high-voltage diode mesa passivation, it is characterized in that: processing step is as follows:
1) mould of plastics that lead-in wire-silico briquette sintered component will be housed is placed on the alkali treatment special stainless steel carriage;
2) in alkali treatment device the one NaOH groove, the 2nd NaOH groove, prepare 12 ± 1% and 4 ± 0.5% NaOH solution respectively, and be heated to (70 ± 2) ℃;
3) carriage that sintered component will be housed is suspended in the swing arm of NaOH groove top, and carriage is immersed in the NaOH groove, corrodes by swing, and etching time is 200s;
4) carriage that a NaOH groove corrosion is finished is put into rapidly in the 2nd NaOH groove, corrodes by swing, and etching time is 200s;
5) carriage that the 2nd NaOH groove internal corrosion is finished is put into the first pure water drip washing groove, pure water flow (8 ± 1) L/min, and the pure water drip washing time is 200s;
6) carriage that drip washing in the first pure water drip washing groove is finished moves in first soaker, pure water flow (10 ± 1) L/min, and the pure water time of embathing is 200s, back drainage;
7) will embathe the carriage of finishing and put into triammonium citrate groove immersion treatment, the triammonium citrate concentration of aqueous solution is 8 ± 0.5%, and soak time is 200s;
8) carriage that immersion is finished moves on in the second pure water drip washing groove, pure water flow (8 ± 1) L/min, and the drip washing time is 200s;
9) carriage that drip washing is finished moves in the pure water ultrasonic cleaning tank, and the pure water flow is (10 ± 1) L/min, and cleaning the ultrasonic cleaning time is 200s;
10) carriage is moved in second soaker, pure water flow (10 ± 1) the L/min. time of embathing is 200s, drainage, and dry up the globule around the carriage with air gun;
11) carriage is dipped in the first acetone groove and carries out processed, the acetone in the acetone groove floods carriage fully, and dewatering time is 200s;
12) carriage is dipped in the second acetone groove, the acetone in the acetone groove floods carriage fully, and dewatering time is 200s, and filter is done;
13) carriage is placed on carries out N2 on the dry conveyer belt and dry up, set N
2Flow 〉=300L/min, line speed 80mm/min, drying finishes, and carriage is taken out from conveyer belt, and mould is taken off from carriage, puts into the N2 Storage Cabinets, N2 Storage Cabinets N
2Flow 〉=20L/min, next step then can carry out the passivation of die surfaces gluing the good parts of alkali treatment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310255771.0A CN103346082B (en) | 2013-06-25 | 2013-06-25 | Alkali pretreatment before high-voltage diode mesa passivation |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310255771.0A CN103346082B (en) | 2013-06-25 | 2013-06-25 | Alkali pretreatment before high-voltage diode mesa passivation |
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| CN103346082A true CN103346082A (en) | 2013-10-09 |
| CN103346082B CN103346082B (en) | 2016-05-25 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107507760A (en) * | 2017-07-28 | 2017-12-22 | 阳信金鑫电子有限公司 | The method for cleaning surface of silica chip in a kind of diode manufacture |
| CN109454051A (en) * | 2018-10-25 | 2019-03-12 | 南通皋鑫电子股份有限公司 | The ME treatment process of 2CL91 type component |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07302780A (en) * | 1994-05-10 | 1995-11-14 | Fuji Electric Co Ltd | Manufacture of semiconductor device |
| CN101087007A (en) * | 2007-05-11 | 2007-12-12 | 上海明兴开城超音波科技有限公司 | Chemical etching, cleaning and drying method of single-crystal silicon solar battery and integrated processing machine |
| CN201655762U (en) * | 2010-04-26 | 2010-11-24 | 贵州雅光电子科技股份有限公司 | Alkali etching machine for diode |
-
2013
- 2013-06-25 CN CN201310255771.0A patent/CN103346082B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07302780A (en) * | 1994-05-10 | 1995-11-14 | Fuji Electric Co Ltd | Manufacture of semiconductor device |
| CN101087007A (en) * | 2007-05-11 | 2007-12-12 | 上海明兴开城超音波科技有限公司 | Chemical etching, cleaning and drying method of single-crystal silicon solar battery and integrated processing machine |
| CN201655762U (en) * | 2010-04-26 | 2010-11-24 | 贵州雅光电子科技股份有限公司 | Alkali etching machine for diode |
Non-Patent Citations (1)
| Title |
|---|
| 宾雪生: ""半导体器件制造中的碱腐蚀"", 《半导体技术》, no. 1, 29 February 1996 (1996-02-29), pages 55 - 56 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107507760A (en) * | 2017-07-28 | 2017-12-22 | 阳信金鑫电子有限公司 | The method for cleaning surface of silica chip in a kind of diode manufacture |
| CN109454051A (en) * | 2018-10-25 | 2019-03-12 | 南通皋鑫电子股份有限公司 | The ME treatment process of 2CL91 type component |
| CN109454051B (en) * | 2018-10-25 | 2021-07-23 | 南通皋鑫电子股份有限公司 | ME treatment process of 2CL91 type component |
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| CN103346082B (en) | 2016-05-25 |
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Effective date of registration: 20210902 Address after: 226503 No. 82, Zhongshan West Road, Rucheng street, Rugao City, Nantong City, Jiangsu Province Patentee after: Jiangsu Gaoxin Electronics Co.,Ltd. Address before: 226502 No. 82, Zhongshan West Road, Rucheng, Rugao, Nantong, Jiangsu Patentee before: NANTONG GAOXIN ELECTRONICS Co.,Ltd. |
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