CN204237867U - Buffer oxide corrosive fluid preparation facilities - Google Patents
Buffer oxide corrosive fluid preparation facilities Download PDFInfo
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- CN204237867U CN204237867U CN201420620111.8U CN201420620111U CN204237867U CN 204237867 U CN204237867 U CN 204237867U CN 201420620111 U CN201420620111 U CN 201420620111U CN 204237867 U CN204237867 U CN 204237867U
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- storage tank
- buffer oxide
- tank
- corrosive fluid
- preparation facilities
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- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
Abstract
The utility model relates to a kind of buffer oxide corrosive fluid preparation facilities, it is characterized in that it comprises preparing tank (1), tensio-active agent storage tank (2), hydrofluoric acid storage tank (3), ammonia storage tank (4), washing bath (5), filtration unit (6) and finished pot (7).The top of described preparing tank (1) is provided with three opening for feeds, three opening for feeds are respectively by the discharge port of tube connection surface promoting agent storage tank (2), hydrofluoric acid storage tank (3) and washing bath (5), the opening for feed of washing bath (5) is connected with the discharge port of ammonia storage tank (4), the discharge port of described preparing tank (1) bottom connects finished pot (7) by discharge pipe, discharge pipe is arranged filtration unit (6).The utility model buffer oxide corrosive fluid preparation facilities is by adding tensio-active agent in preparing tank, and the buffer oxide corrosive fluid prepared has low surface tension, makes it can be used in corroding silicon substrate surface small-bore.
Description
Technical field
The utility model relates to a kind of buffer oxide corrosive fluid preparation facilities.
Background technology
Buffer oxide corrosive fluid is used for the cleaning of the silicon substrate of LED or semi-conductor, traditional buffer oxide corrosive fluid surface tension is larger, reach 80 reach because of, smaller aperture due corrosive effect for silicon substrate surface is poor, therefore seek a kind of buffer oxide corrosive fluid prepared and have low surface tension, the buffer oxide corrosive fluid preparation facilities making it can be used in corroding silicon substrate surface small-bore is particularly important.
The purpose of this utility model is to overcome above-mentioned deficiency, provides a kind of buffer oxide corrosive fluid prepared to have low surface tension, makes it can be used in corroding the buffer oxide corrosive fluid preparation facilities of silicon substrate surface small-bore.
The purpose of this utility model is achieved in that
A kind of buffer oxide corrosive fluid preparation facilities, it comprises preparing tank, tensio-active agent storage tank, hydrofluoric acid storage tank, ammonia storage tank, washing bath, filtration unit and finished pot.The top of described preparing tank is provided with three opening for feeds, three opening for feeds are respectively by the discharge port of tube connection surface promoting agent storage tank, hydrofluoric acid storage tank and washing bath, the opening for feed of washing bath is connected with the discharge port of ammonia storage tank, discharge port bottom described preparing tank connects finished pot by discharge pipe, and discharge pipe arranges filtration unit.
Preferred as one, the inwall of described preparing tank is provided with ETFE coating.
Preferred as one, the inside of described preparing tank is provided with PTFE inner coil pipe.
Compared with prior art, the beneficial effects of the utility model are:
The utility model buffer oxide corrosive fluid preparation facilities is by adding tensio-active agent in preparing tank, and the buffer oxide corrosive fluid prepared has low surface tension, makes it can be used in corroding silicon substrate surface small-bore.And buffer oxide corrosive fluid has acidproof, good fluidity, removes metal ion, negatively charged ion, avoids other BOE to occur the advantage of the problems such as uneven dyeing.
Accompanying drawing explanation
Fig. 1 is the structural representation of the utility model buffer oxide corrosive fluid preparation facilities.
Wherein:
Preparing tank 1, tensio-active agent storage tank 2, hydrofluoric acid storage tank 3, ammonia storage tank 4, washing bath 5, filtration unit 6, finished pot 7.
Embodiment
See Fig. 1, a kind of buffer oxide corrosive fluid preparation facilities that the utility model relates to, it comprises preparing tank 1, tensio-active agent storage tank 2, hydrofluoric acid storage tank 3, ammonia storage tank 4, washing bath 5, filtration unit 6 and finished pot 7.The top of described preparing tank 1 is provided with three opening for feeds, three opening for feeds are respectively by the discharge port of tube connection surface promoting agent storage tank 2, hydrofluoric acid storage tank 3 and washing bath 5, the opening for feed of washing bath 5 is connected with the discharge port of ammonia storage tank 4, discharge port bottom described preparing tank 1 connects finished pot 7 by discharge pipe, discharge pipe is arranged filtration unit 6.The top of described preparing tank 1 is also connected with water seal 8 by pipeline.The inwall of described preparing tank 1 is provided with ETFE(ethylene-tetrafluoroethylene copolymer) coating, the inside of described preparing tank 1 is provided with PTFE(tetrafluoroethylene) inner coil pipe.
Principle of work:
Hydrofluoric acid, tensio-active agent and the ammonia after washing pass into preparing tank and are configured, and the mixed solution after configuration passes into finished pot through filtration devices and collects.
Claims (3)
1. a buffer oxide corrosive fluid preparation facilities, is characterized in that it comprises preparing tank (1), tensio-active agent storage tank (2), hydrofluoric acid storage tank (3), ammonia storage tank (4), washing bath (5), filtration unit (6) and finished pot (7); The top of described preparing tank (1) is provided with three opening for feeds, three opening for feeds are respectively by the discharge port of tube connection surface promoting agent storage tank (2), hydrofluoric acid storage tank (3) and washing bath (5), the opening for feed of washing bath (5) is connected with the discharge port of ammonia storage tank (4), the discharge port of described preparing tank (1) bottom connects finished pot (7) by discharge pipe, discharge pipe is arranged filtration unit (6), the top of described preparing tank (1) is also connected with water seal (8) by pipeline.
2. a kind of buffer oxide corrosive fluid preparation facilities according to claim 1, is characterized in that the inwall of described preparing tank (1) is provided with ETFE coating.
3. a kind of buffer oxide corrosive fluid preparation facilities according to claim 1 and 2, is characterized in that the inside of described preparing tank (1) is provided with PTFE inner coil pipe.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201420620111.8U CN204237867U (en) | 2014-10-25 | 2014-10-25 | Buffer oxide corrosive fluid preparation facilities |
Applications Claiming Priority (1)
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---|---|---|---|
CN201420620111.8U CN204237867U (en) | 2014-10-25 | 2014-10-25 | Buffer oxide corrosive fluid preparation facilities |
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CN204237867U true CN204237867U (en) | 2015-04-01 |
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CN201420620111.8U Active CN204237867U (en) | 2014-10-25 | 2014-10-25 | Buffer oxide corrosive fluid preparation facilities |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111235578A (en) * | 2020-02-24 | 2020-06-05 | 江苏传艺科技股份有限公司 | Etching solution for GaN millimeter wave power amplifier chip production and preparation method thereof |
-
2014
- 2014-10-25 CN CN201420620111.8U patent/CN204237867U/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111235578A (en) * | 2020-02-24 | 2020-06-05 | 江苏传艺科技股份有限公司 | Etching solution for GaN millimeter wave power amplifier chip production and preparation method thereof |
CN111235578B (en) * | 2020-02-24 | 2021-12-10 | 江苏传艺科技股份有限公司 | Etching solution for GaN millimeter wave power amplifier chip production and preparation method thereof |
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Legal Events
Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20230201 Address after: No. 505, Changjiang East Road, Yangzijiang International Chemical Industry Park, Suzhou, Jiangsu 215600 Patentee after: Jiangsu Meiyang Electronic Materials Co.,Ltd. Address before: 214421 Xiangyang Qiaotu, Huashi Town, Jiangyin City, Wuxi City, Jiangsu Province Patentee before: JIANGYIN CHEMICAL REAGENT FACTORY CO.,LTD. |
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TR01 | Transfer of patent right |