CN106128955A - A kind of production technology of diode - Google Patents
A kind of production technology of diode Download PDFInfo
- Publication number
- CN106128955A CN106128955A CN201610618017.2A CN201610618017A CN106128955A CN 106128955 A CN106128955 A CN 106128955A CN 201610618017 A CN201610618017 A CN 201610618017A CN 106128955 A CN106128955 A CN 106128955A
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- China
- Prior art keywords
- diode
- backlight unit
- temperature
- diode chip
- baking
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 238000005516 engineering process Methods 0.000 title claims abstract description 26
- 238000005554 pickling Methods 0.000 claims abstract description 24
- 238000003466 welding Methods 0.000 claims abstract description 23
- 238000007747 plating Methods 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 16
- 238000005476 soldering Methods 0.000 claims abstract description 15
- 238000010105 thermoset forming Methods 0.000 claims abstract description 14
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000002253 acid Substances 0.000 claims abstract description 13
- 239000003292 glue Substances 0.000 claims abstract description 13
- 238000003825 pressing Methods 0.000 claims abstract description 9
- 238000005538 encapsulation Methods 0.000 claims abstract description 8
- 238000001746 injection moulding Methods 0.000 claims abstract description 8
- 239000005022 packaging material Substances 0.000 claims abstract description 8
- 238000004806 packaging method and process Methods 0.000 claims abstract description 8
- 239000004033 plastic Substances 0.000 claims abstract description 8
- 239000000126 substance Substances 0.000 claims abstract description 8
- 239000010409 thin film Substances 0.000 claims abstract description 8
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 20
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 10
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 9
- 229910017604 nitric acid Inorganic materials 0.000 claims description 9
- 239000003822 epoxy resin Substances 0.000 claims description 5
- 229920000647 polyepoxide Polymers 0.000 claims description 5
- 239000003643 water by type Substances 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 6
- 230000002441 reversible effect Effects 0.000 abstract description 6
- 230000015556 catabolic process Effects 0.000 abstract description 4
- 230000010415 tropism Effects 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 210000003739 neck Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Led Device Packages (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The invention provides the production technology of a kind of diode, relate to electronic devices and components manufacture technology field, including welding, pickling, mold pressing, thermoset forming, plating and low-temperature bake, welding material is put in soldering furnace, diode chip for backlight unit group is carried out high-temperature soldering, and temperature is 300 310 DEG C；The diode chip for backlight unit welded carries out chemical attack to diode chip for backlight unit surrounding edge respectively by mixed acid；Diode chip for backlight unit after acidifying and encapsulation bed material sheet are put in mould, and with black glue, diode chip for backlight unit is carried out injection molding packaging；The diode molded is put into curing oven 7 9h of 280 300 DEG C, to improve the reliability of plastic packaging material；Formed the tin layers of thin film again at Diode facets by plating；Finally, then carry out low-temperature bake.Present invention process step is simple, simplifies operation, and real cost of production is less, and diode prepared by this method has preferable positive tropism, reverse property, breakdown characteristics, and reliable and stable, substantially prolongs the service life of diode.
Description
Technical field
The present invention relates to electronic devices and components manufacture technology field, particularly relate to the production technology of a kind of diode.
Background technology
Diode, also known as crystal diode, is called for short diode (diode);It is only toward the electronics zero of a direction transmission electric current
Part.It is a kind of device with 2 terminals that 1 Part No. engages, and has the direction according to applied voltage, makes electric current flow
Or immobilising character.Crystal diode is a p-n junction formed by p-type semiconductor and n-type semiconductor, in its interface two
Side forms space charge layer, and has built-in field.When there is not applied voltage, owing to p-n junction both sides carrier concentration is poor
The drift current that the dissufion current caused and built-in field cause is equal and is in electric equilibrium state.Major part diode is possessed
The sense of current we be normally referred to as " rectification (Rectifying) " function.The most common function of diode is exactly only to allow
Electric current by (referred to as forward bias voltage drop), is blocked (referred to as reverse bias) time reverse by single direction.Therefore, diode can be thought of as
The non-return valve of electronic edition.But actually diode can't show the directivity of so perfect Push And Release, but more
Complicated non-linear electronic feature this determined by certain types of diode technologies.Diode uses except being used as
A lot of other functions is also had outside the mode of switch.
Summary of the invention
The invention provides the production technology of a kind of diode, including welding, pickling, mold pressing, thermoset forming, plating and low
Temperature baking.
The production technology of a kind of diode, including welding, pickling, mold pressing, thermoset forming, plating and low-temperature bake, two poles
The production technology of pipe is as follows:
(1) welding: putting in soldering furnace by welding material, diode chip for backlight unit group is carried out high-temperature soldering, temperature is 300-310
℃；
(2) pickling: the diode chip for backlight unit welded carries out chemical attack to diode chip for backlight unit surrounding edge respectively by mixed acid；
(3) mold: the diode chip for backlight unit after acidifying and encapsulation bed material sheet are put in mould, and with black glue, diode chip for backlight unit is entered
Row injection molding packaging；
(4) thermoset forming: the diode molded is put into the curing oven 7-9h of 280-300 DEG C, can with improve plastic packaging material
By property；
(5) plating: formed the tin layers of thin film again by plating at Diode facets；
(6) low-temperature bake: last, then carry out low-temperature bake.
Preferably, in described step (2), mixed acid mainly includes HNO3、HF、CH3COOH and H2SO4, its proportioning is HNO3:
HF:CH3COOH:H2SO4=(8-10):(8-10):(11-13):(3-5)。
Preferably, described step (2) pickling also includes being rinsed diode chip for backlight unit after pickling with a large amount of deionized waters,
And cleaned diode chip for backlight unit is put into baking 0.5-1.5h in the baking oven of 100-130 DEG C.
Preferably, in described step (3), black glue is mainly composed of epoxy resin.
Preferably, in described step (5), tin thickness is 1-3mm, to improve the weldability of diode lead, protective
Energy.
Preferably, in described step (6), low-temperature bake is carried out in three steps: first, by the baking temperature of described baking box
Degree is set as 100-110 DEG C, and baking time is set as 355-365min；Secondly, the baking temperature of baking box is 75-85 DEG C, dries
The roasting time is 115-125min；Finally, treating that the temperature inside the box of described baking box is cooled to 50-70 DEG C, baking time is 110-
120min。
Beneficial effect: the invention provides the production technology of a kind of diode, relates to electronic devices and components manufacture technology field,
Including welding, pickling, mold pressing, thermoset forming, plating and low-temperature bake, welding material is put in soldering furnace, to diode core
Sheet group carries out high-temperature soldering, and temperature is 300-310 DEG C；The diode chip for backlight unit welded passes through mixed acid respectively to diode chip for backlight unit
Surrounding edge carries out chemical attack；Diode chip for backlight unit after acidifying and encapsulation bed material sheet are put in mould, and with black glue to two
Pole die carries out injection molding packaging；The diode molded is put into the curing oven 7-9h of 280-300 DEG C, to improve plastic packaging material
Reliability；Formed the tin layers of thin film again at Diode facets by plating；Finally, then carry out low-temperature bake.The present invention
Processing step is simple, simplifies operation, and real cost of production is less, and diode prepared by this method has preferable forward
Property, reverse property, breakdown characteristics, and reliable and stable, substantially prolongs the service life of diode.
Detailed description of the invention
For the technological means making the present invention realize, creation characteristic, reach purpose and be easy to understand with effect, below in conjunction with
Detailed description of the invention, is expanded on further the present invention.
Embodiment 1:
A kind of production technology of diode, including welding, pickling, mold pressing, thermoset forming, plating and low-temperature bake, diode
Production technology is as follows:
(1) welding: putting in soldering furnace by welding material, diode chip for backlight unit group is carried out high-temperature soldering, temperature is 300 DEG C；
(2) pickling: the diode chip for backlight unit welded carries out chemical attack to diode chip for backlight unit surrounding edge respectively by mixed acid；
(3) mold: the diode chip for backlight unit after acidifying and encapsulation bed material sheet are put in mould, and with black glue, diode chip for backlight unit is entered
Row injection molding packaging；
(4) thermoset forming: the diode molded is put into the curing oven 7h of 280 DEG C, to improve the reliability of plastic packaging material；
(5) plating: formed the tin layers of thin film again by plating at Diode facets；
(6) low-temperature bake: last, then carry out low-temperature bake.
Wherein, in described step (2), mixed acid mainly includes HNO3、HF、CH3COOH and H2SO4, its proportioning is HNO3:HF:
CH3COOH:H2SO4=8:8:11:3；Described step (2) pickling also includes entering diode chip for backlight unit after pickling with a large amount of deionized waters
Row rinses, and cleaned diode chip for backlight unit is put into baking 0.5h in the baking oven of 100 DEG C；In described step (3), black glue mainly becomes
It is divided into epoxy resin；In described step (5), tin thickness is 1mm, to improve the weldability of diode lead, barrier propterty；
In described step (6), low-temperature bake is carried out in three steps: first, and the baking temperature of described baking box is set as 100 DEG C, dries
The roasting time is set as 355min；Secondly, the baking temperature of baking box is 75 DEG C, and baking time is 115min；Finally, described baking is treated
The temperature inside the box of baking box is cooled to 50 DEG C, and baking time is 110min.
Embodiment 2:
A kind of production technology of diode, including welding, pickling, mold pressing, thermoset forming, plating and low-temperature bake, diode
Production technology is as follows:
(1) welding: putting in soldering furnace by welding material, diode chip for backlight unit group is carried out high-temperature soldering, temperature is 305 DEG C；
(2) pickling: the diode chip for backlight unit welded carries out chemical attack to diode chip for backlight unit surrounding edge respectively by mixed acid；
(3) mold: the diode chip for backlight unit after acidifying and encapsulation bed material sheet are put in mould, and with black glue, diode chip for backlight unit is entered
Row injection molding packaging；
(4) thermoset forming: the diode molded is put into the curing oven 8h of 290 DEG C, to improve the reliability of plastic packaging material；
(5) plating: formed the tin layers of thin film again by plating at Diode facets；
(6) low-temperature bake: last, then carry out low-temperature bake.
Wherein, in described step (2), mixed acid mainly includes HNO3、HF、CH3COOH and H2SO4, its proportioning is HNO3:HF:
CH3COOH:H2SO4=8:9:12:4；Described step (2) pickling also includes entering diode chip for backlight unit after pickling with a large amount of deionized waters
Row rinses, and cleaned diode chip for backlight unit is put into baking 1h in the baking oven of 110 DEG C；Black glue main component in described step (3)
For epoxy resin；In described step (5), tin thickness is 2mm, to improve the weldability of diode lead, barrier propterty；Institute
State low-temperature bake in step (6) to carry out in three steps: first, the baking temperature of described baking box is set as 105 DEG C, baking
Time is set as 360min；Secondly, the baking temperature of baking box is 80 DEG C, and baking time is 120min；Finally, described baking is treated
The temperature inside the box of case is cooled to 60 DEG C, and baking time is 115min.
Embodiment 3:
A kind of production technology of diode, including welding, pickling, mold pressing, thermoset forming, plating and low-temperature bake, diode
Production technology is as follows:
(1) welding: putting in soldering furnace by welding material, diode chip for backlight unit group is carried out high-temperature soldering, temperature is 310 DEG C；
(2) pickling: the diode chip for backlight unit welded carries out chemical attack to diode chip for backlight unit surrounding edge respectively by mixed acid；
(3) mold: the diode chip for backlight unit after acidifying and encapsulation bed material sheet are put in mould, and with black glue, diode chip for backlight unit is entered
Row injection molding packaging；
(4) thermoset forming: the diode molded is put into the curing oven 9h of 300 DEG C, to improve the reliability of plastic packaging material；
(5) plating: formed the tin layers of thin film again by plating at Diode facets；
(6) low-temperature bake: last, then carry out low-temperature bake.
Wherein, in described step (2), mixed acid mainly includes HNO3、HF、CH3COOH and H2SO4, its proportioning is HNO3:HF:
CH3COOH:H2SO4=10:10:13:5；Described step (2) pickling also includes with a large amount of deionized waters diode chip for backlight unit after pickling
It is rinsed, and cleaned diode chip for backlight unit is put into baking 1.5h in the baking oven of 130 DEG C；In described step (3), black glue is main
Composition is epoxy resin；In described step (5), tin thickness is 3mm, to improve the weldability of diode lead, protective
Energy；In described step (6), low-temperature bake is carried out in three steps: first, and the baking temperature of described baking box is set as 110
DEG C, baking time is set as 365min；Secondly, the baking temperature of baking box is 85 DEG C, and baking time is 125min；Finally, treat
The temperature inside the box of described baking box is cooled to 70 DEG C, and baking time is 120min.
| Positive tropism | Reversely property | Breakdown characteristics | |
| Embodiment 1 | Qualified | Good | Good |
| Embodiment 2 | Excellent | Excellent | Excellent |
| Embodiment 3 | Good | Qualified | Good |
| Existing technical parameter | Qualified | Qualified | Qualified |
According to above table data, embodiment 2 uses the production technology of diode of the present invention and existing technology
Parameter compares, and has positive tropism, reverse property, breakdown characteristics, and reliable and stable, substantially prolongs the service life of diode.
The invention provides the production technology of a kind of diode, relate to electronic devices and components manufacture technology field, including welding,
Pickling, mold pressing, thermoset forming, plating and low-temperature bake, put in soldering furnace by welding material, and diode chip for backlight unit group is carried out height
Temperature welding, temperature is 300-310 DEG C；Diode chip for backlight unit surrounding edge is entered respectively by the diode chip for backlight unit welded by mixed acid
Row chemical attack；Diode chip for backlight unit after acidifying and encapsulation bed material sheet are put in mould, and with black glue, diode chip for backlight unit is entered
Row injection molding packaging；The diode molded is put into the curing oven 7-9h of 280-300 DEG C, to improve the reliability of plastic packaging material；
Formed the tin layers of thin film again at Diode facets by plating；Finally, then carry out low-temperature bake.The letter of present invention process step
Single, simplify operation, real cost of production is less, and diode prepared by this method has preferable positive tropism, reverse property, hits
Wear characteristic, and reliable and stable, substantially prolongs the service life of diode.
The foregoing is only embodiments of the invention, not thereby limit the scope of the claims of the present invention, every utilize this
Equivalent structure or equivalence flow process that bright description is made convert, or are directly or indirectly used in other relevant technology necks
Territory, is the most in like manner included in the scope of patent protection of the present invention.
Claims (6)
1. the production technology of a diode, it is characterised in that include welding, pickling, mold pressing, thermoset forming, plating and low temperature
Baking, the production technology of diode is as follows:
(1) welding: putting in soldering furnace by welding material, diode chip for backlight unit group is carried out high-temperature soldering, temperature is 300-310
℃；
(2) pickling: the diode chip for backlight unit welded carries out chemical attack to diode chip for backlight unit surrounding edge respectively by mixed acid；
(3) mold: the diode chip for backlight unit after acidifying and encapsulation bed material sheet are put in mould, and with black glue, diode chip for backlight unit is entered
Row injection molding packaging；
(4) thermoset forming: the diode molded is put into the curing oven 7-9h of 280-300 DEG C, can with improve plastic packaging material
By property；
(5) plating: formed the tin layers of thin film again by plating at Diode facets；
(6) low-temperature bake: last, then carry out low-temperature bake.
The manufacturing process of automotive hub the most according to claim 1, it is characterised in that mixed acid master in described step (2)
HNO to be included3、HF、CH3COOH and H2SO4, its proportioning is HNO3:HF:CH3COOH:H2SO4=(8-10):(8-10):(11-
13):(3-5)。
The manufacturing process of automotive hub the most according to claim 1 and 2, it is characterised in that described step (2) pickling is also wrapped
Include and with a large amount of deionized waters, diode chip for backlight unit after pickling is rinsed, and cleaned diode chip for backlight unit is put into 100-130
DEG C baking oven in dry 0.5-1.5h.
The manufacturing process of automotive hub the most according to claim 1, it is characterised in that in described step (3), black glue is main
Composition is epoxy resin.
The manufacturing process of automotive hub the most according to claim 1, it is characterised in that tin thickness in described step (5)
For 1-3mm, to improve the weldability of diode lead, barrier propterty.
The manufacturing process of automotive hub the most according to claim 1, it is characterised in that low-temperature bake in described step (6)
Carrying out in three steps: first, the baking temperature of described baking box is set as 100-110 DEG C, baking time is set as 355-
365min；Secondly, the baking temperature of baking box is 75-85 DEG C, and baking time is 115-125min；Finally, described baking box is treated
The temperature inside the box be cooled to 50-70 DEG C, baking time is 110-120min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610618017.2A CN106128955A (en) | 2016-08-01 | 2016-08-01 | A kind of production technology of diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610618017.2A CN106128955A (en) | 2016-08-01 | 2016-08-01 | A kind of production technology of diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106128955A true CN106128955A (en) | 2016-11-16 |
Family
ID=57255404
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610618017.2A Withdrawn CN106128955A (en) | 2016-08-01 | 2016-08-01 | A kind of production technology of diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106128955A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108010833A (en) * | 2017-12-01 | 2018-05-08 | 山东理工大学 | For the mixed acid of diode cleaning, production method, diode cleaning method |
| CN108677244A (en) * | 2018-06-05 | 2018-10-19 | 陈涛 | A kind of semiconductor diode production technology |
| CN108672597A (en) * | 2018-05-29 | 2018-10-19 | 陈欣洁 | A kind of semiconductor diode production technology |
| CN108796592A (en) * | 2018-06-05 | 2018-11-13 | 陈涛 | A kind of semiconductor diode electroplating processes system |
| CN109830577A (en) * | 2019-01-18 | 2019-05-31 | 重庆市妙格科技有限公司 | A kind of manufacturing method of high quality light-emitting diode |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020042156A1 (en) * | 2000-10-06 | 2002-04-11 | Hsing Chen | Packaging types of light-emitting diode |
| CN102214570A (en) * | 2010-04-04 | 2011-10-12 | 如皋市易达电子有限责任公司 | Production method of high stability trigger diode |
| CN102263140A (en) * | 2011-08-10 | 2011-11-30 | 山东沂光电子股份有限公司 | Plastic package power diode and manufacturing technology thereof |
| CN102651404A (en) * | 2012-05-25 | 2012-08-29 | 常州银河电器有限公司 | Axial diode and fabrication method of axial diode with polyimide glue as protection glue layer |
| CN103681319A (en) * | 2013-12-18 | 2014-03-26 | 常州星海电子有限公司 | Manufacturing technology of diodes |
-
2016
- 2016-08-01 CN CN201610618017.2A patent/CN106128955A/en not_active Withdrawn
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020042156A1 (en) * | 2000-10-06 | 2002-04-11 | Hsing Chen | Packaging types of light-emitting diode |
| CN102214570A (en) * | 2010-04-04 | 2011-10-12 | 如皋市易达电子有限责任公司 | Production method of high stability trigger diode |
| CN102263140A (en) * | 2011-08-10 | 2011-11-30 | 山东沂光电子股份有限公司 | Plastic package power diode and manufacturing technology thereof |
| CN102651404A (en) * | 2012-05-25 | 2012-08-29 | 常州银河电器有限公司 | Axial diode and fabrication method of axial diode with polyimide glue as protection glue layer |
| CN103681319A (en) * | 2013-12-18 | 2014-03-26 | 常州星海电子有限公司 | Manufacturing technology of diodes |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108010833A (en) * | 2017-12-01 | 2018-05-08 | 山东理工大学 | For the mixed acid of diode cleaning, production method, diode cleaning method |
| CN108010833B (en) * | 2017-12-01 | 2020-03-24 | 山东理工大学 | Mixed acid for cleaning diode, production method and diode cleaning method |
| CN108672597A (en) * | 2018-05-29 | 2018-10-19 | 陈欣洁 | A kind of semiconductor diode production technology |
| CN108672597B (en) * | 2018-05-29 | 2019-08-20 | 吉林瑞能半导体有限公司 | A kind of semiconductor diode production technology |
| CN108677244A (en) * | 2018-06-05 | 2018-10-19 | 陈涛 | A kind of semiconductor diode production technology |
| CN108796592A (en) * | 2018-06-05 | 2018-11-13 | 陈涛 | A kind of semiconductor diode electroplating processes system |
| CN109830577A (en) * | 2019-01-18 | 2019-05-31 | 重庆市妙格科技有限公司 | A kind of manufacturing method of high quality light-emitting diode |
| CN109830577B (en) * | 2019-01-18 | 2021-06-15 | 深圳市广盛浩科技有限公司 | Manufacturing method of high-quality light-emitting diode |
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Application publication date: 20161116 |