CN102581410B - A kind of welding procedure of diode chip for backlight unit - Google Patents
A kind of welding procedure of diode chip for backlight unit Download PDFInfo
- Publication number
- CN102581410B CN102581410B CN201210049506.2A CN201210049506A CN102581410B CN 102581410 B CN102581410 B CN 102581410B CN 201210049506 A CN201210049506 A CN 201210049506A CN 102581410 B CN102581410 B CN 102581410B
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- China
- Prior art keywords
- welding
- loaded
- welding fixture
- chip
- backlight unit
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- 238000003466 welding Methods 0.000 title claims abstract description 55
- 238000000034 method Methods 0.000 title claims abstract description 18
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052802 copper Inorganic materials 0.000 claims abstract description 10
- 239000010949 copper Substances 0.000 claims abstract description 10
- 239000000843 powder Substances 0.000 claims description 13
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 9
- 229910000679 solder Inorganic materials 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 claims description 3
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 238000004080 punching Methods 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 6
- 238000004140 cleaning Methods 0.000 abstract description 3
- 239000000203 mixture Substances 0.000 abstract description 3
- 239000002994 raw material Substances 0.000 abstract description 3
- 239000012535 impurity Substances 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 239000002253 acid Substances 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 3
- 238000005554 pickling Methods 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 230000004807 localization Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011265 semifinished product Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- CYNYIHKIEHGYOZ-UHFFFAOYSA-N 1-bromopropane Chemical compound CCCBr CYNYIHKIEHGYOZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
Abstract
The present invention relates to the improvement to composition of raw material in a kind of welding procedure of semiconductor chip.Does it comprise the following steps: 1. shot copper is loaded in welding fixture; 2. the weld tabs containing fluxing agent is loaded in welding fixture; 3. chip is loaded in welding fixture; 4. the weld tabs containing fluxing agent is loaded in welding fixture; 5. shot copper is loaded in welding fixture; 6. the welding fixture filled is entered stove welding.The welding procedure of a kind of diode chip for backlight unit of the present invention not only reduces welding sequence, enhances productivity; And effectively can remove because matting is not thorough in acid cleaning process after being welded, echo the contaminating impurity on chip side surface, thus make the hot properties of material more stable, reduce because material causes electrically unstable probability because surface leakage is large.
Description
Technical field
The present invention relates to a kind of welding procedure of semiconductor chip, particularly relate to the improvement to composition of raw material in welding procedure.
Background technology
The welding procedure of prior art to diode chip for backlight unit flows through journey and is:
shot copper loads
spray scaling powder
weld tabs loads
chip loads
weld tabs loads
shot copper loads
spray scaling powder,
the welding fixture filled is entered stove welding.Secondly welding semi-finished product are carried out n-Propyl Bromide cleaning and pickling.
The weld tabs composition adopted during original welding has Pb, Sn, Ag, bad with the zygosity of chip after high temperature, scaling powder auxiliary welding need be used, welding localization tool is just put after scaling powder is air-dry, cause production efficiency low, chip side surface can be remained in after scaling powder welding, make cleaning thorough not, cause material electrically unstable.
Summary of the invention
While technical problem to be solved by this invention is to provide and can enhances productivity and a kind of diode chip for backlight unit welding procedure making material electrically stable.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of welding procedure of diode chip for backlight unit, and it comprises the following steps:
shot copper is loaded in welding fixture;
weld tabs containing fluxing agent is loaded in welding fixture;
chip is loaded in welding fixture;
weld tabs containing fluxing agent is loaded in welding fixture;
shot copper is loaded in welding fixture;
the welding fixture filled is entered stove welding.
Further, the method for making of the described weld tabs containing fluxing agent is for make scaling powder brush through mould punching behind solder stick surface.
Further, the parts by weight of described scaling powder are rosin 4 parts, isopropyl alcohol 1 part.
Further, the weight ratio of described solder stick is that lead accounts for 92.5%, and tin accounts for 5%, and silver accounts for 2.5%.
Adopt the beneficial effect of such scheme to be adopt the inventive method to be that welding diode operation does not need to spray scaling powder, make production technology simpler; Adopt after the weld tabs of transformation, do not need to wait scaling powder air-dry after raw material assembling, directly can put welding localization tool, not only reduce welding sequence, enhance productivity; After adopting the weld tabs of transformation to weld, effectively can remove during pickling because matting is not thorough, echo the contaminating impurity on chip side surface, thus make the hot properties of material more stable, reduce because material causes electrical instability because surface leakage is large.
Accompanying drawing explanation
Fig. 1 is welding process flow figure of the present invention.
Embodiment
Be described principle of the present invention and feature below in conjunction with accompanying drawing, example, only for explaining the present invention, is not intended to limit scope of the present invention.
Embodiment 1
As shown in Figure 1, the present invention includes following steps:
shot copper is loaded in welding fixture, then chip correcting plate is fixed on welding fixture inside;
weld tabs containing fluxing agent is loaded in welding fixture;
chip is loaded in welding fixture;
weld tabs containing fluxing agent is loaded in welding fixture; Chip correcting plate is taken out from welding fixture;
shot copper is loaded in welding fixture;
the welding fixture filled is entered stove welding.
The method for making of the described weld tabs containing fluxing agent is for make scaling powder brush through mould punching behind solder stick surface.
The parts by weight of described scaling powder are rosin 4 parts, isopropyl alcohol 1 part.
The weight ratio of described solder stick is that lead accounts for 92.5%, and tin accounts for 5%, and silver accounts for 2.5%.
Again welding semi-finished product are carried out pickling after having welded.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (3)
1. a welding procedure for diode chip for backlight unit, is characterized in that, it comprises the following steps:
1. shot copper is loaded in welding fixture;
2. the weld tabs containing fluxing agent is loaded in welding fixture;
3. chip is loaded in welding fixture;
4. the weld tabs containing fluxing agent is loaded in welding fixture;
5. shot copper is loaded in welding fixture;
6. the welding fixture filled is entered stove welding;
Wherein, the method for making of the described weld tabs containing fluxing agent is for make scaling powder brush through mould punching behind solder stick surface.
2. the welding procedure of a kind of diode chip for backlight unit according to claim 1, is characterized in that: the parts by weight of described scaling powder are rosin 4 parts, isopropyl alcohol 1 part.
3. the welding procedure of a kind of diode chip for backlight unit according to claim 1, is characterized in that: the weight ratio of described solder stick is that lead accounts for 92.5%, and tin accounts for 5%, and silver accounts for 2.5%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210049506.2A CN102581410B (en) | 2012-02-29 | 2012-02-29 | A kind of welding procedure of diode chip for backlight unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210049506.2A CN102581410B (en) | 2012-02-29 | 2012-02-29 | A kind of welding procedure of diode chip for backlight unit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102581410A CN102581410A (en) | 2012-07-18 |
| CN102581410B true CN102581410B (en) | 2016-04-27 |
Family
ID=46470947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210049506.2A Active CN102581410B (en) | 2012-02-29 | 2012-02-29 | A kind of welding procedure of diode chip for backlight unit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102581410B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111730161B (en) * | 2020-06-30 | 2021-06-22 | 安徽安美半导体有限公司 | Copper particle double-side pre-welding device and welding method |
| CN112750766B (en) * | 2020-12-14 | 2022-12-27 | 山东融创电子科技有限公司 | Preparation process of long-life diode |
| CN113751821B (en) * | 2021-09-17 | 2023-02-03 | 扬州虹扬科技发展有限公司 | Welding jig and welding method of crystal grains |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3584265A (en) * | 1967-09-12 | 1971-06-08 | Bosch Gmbh Robert | Semiconductor having soft soldered connections thereto |
| CN1851887A (en) * | 2006-03-22 | 2006-10-25 | 常州久和电子有限公司 | Method for processing patch diode |
| CN201360006Y (en) * | 2009-02-12 | 2009-12-09 | 常州银河电器有限公司 | Commutation diode |
| CN101740409A (en) * | 2008-11-06 | 2010-06-16 | 贵州雅光电子科技股份有限公司 | Method for welding lead of diode and diode |
| CN102059471A (en) * | 2010-12-29 | 2011-05-18 | 厦门大学 | Soldering paste of Sn-Bi-Cu self-packed composite powder and preparation method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05315734A (en) * | 1992-05-01 | 1993-11-26 | Mitsubishi Electric Corp | Installation board and installation method of electronic parts |
| CN102332832A (en) * | 2010-07-12 | 2012-01-25 | 昆山巩诚电器有限公司 | Automobile rectification regulator and production process thereof |
-
2012
- 2012-02-29 CN CN201210049506.2A patent/CN102581410B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3584265A (en) * | 1967-09-12 | 1971-06-08 | Bosch Gmbh Robert | Semiconductor having soft soldered connections thereto |
| CN1851887A (en) * | 2006-03-22 | 2006-10-25 | 常州久和电子有限公司 | Method for processing patch diode |
| CN101740409A (en) * | 2008-11-06 | 2010-06-16 | 贵州雅光电子科技股份有限公司 | Method for welding lead of diode and diode |
| CN201360006Y (en) * | 2009-02-12 | 2009-12-09 | 常州银河电器有限公司 | Commutation diode |
| CN102059471A (en) * | 2010-12-29 | 2011-05-18 | 厦门大学 | Soldering paste of Sn-Bi-Cu self-packed composite powder and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102581410A (en) | 2012-07-18 |
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Effective date of registration: 20231023 Address after: No. 58 Xinganquan East Road, Huaishi Town, Hangjiang District, Yangzhou City, Jiangsu Province, 225000 Patentee after: Jiangsu Yingdafu Electronic Technology Co.,Ltd. Address before: No. 45, Hongyang East Road, Huaisi Town, Yangzhou City, Jiangsu Province, 225116 Patentee before: YANGZHOU HY TECHNOLOGY DEVELOPMENT Co.,Ltd. |