CN103113126A - Method for directly cladding copper by sintering wet-method copper oxide piece - Google Patents
Method for directly cladding copper by sintering wet-method copper oxide piece Download PDFInfo
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- CN103113126A CN103113126A CN2011103644670A CN201110364467A CN103113126A CN 103113126 A CN103113126 A CN 103113126A CN 2011103644670 A CN2011103644670 A CN 2011103644670A CN 201110364467 A CN201110364467 A CN 201110364467A CN 103113126 A CN103113126 A CN 103113126A
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Abstract
The invention discloses a method for directly cladding copper by sintering a wet-method copper oxide piece. The method comprises the following steps of: step one, carrying out surface pretreatment on the copper piece; step two, putting the copper piece subjected to surface treatment into a treatment solution to oxidize; step three, washing and drying the oxidized copper piece; step four, putting the dried copper piece into a mold to pre-bend; and step five, putting the pre-bent copper piece on a ceramic piece to sinter. Compared with the high-temperature annealing and oxidation, the wet-method oxidation is beneficial for shorting the procedure time, saves the energy, lowers the cost and needs no equipment such as an annealing furnace. Compared with high-temperature annealing and oxidation, the copper surface of a DBC (Database Computer) produced by wet-method oxidation is fine in grain, the improvement of the mechanical properties of the copper piece is facilitated, and the trace of a conveyer belt is eliminated.
Description
Technical field
The invention belongs to field of semiconductor manufacture, be fit to directly cover the manufacturing, particularly a kind of method of wet oxidation copper sheet sintering direct copper of copper ceramic substrate.
Background technology
At present existing industry generally adopts contacts sintering with alumina-ceramic after completing with copper sheet high temperature annealing oxidation one.But the mode of this high temperature annealing, oxidation one has the following disadvantages:
(1) oxidation is inhomogeneous: can directly bring the sintering defective to follow-up sintering, stripping strength changes greatly.
(2) travelling belt vestige: because high temperature, oxidising process are carried by travelling belt, the existence of travelling belt mesh, the temperature distributing disproportionation that can affect whole copper sheet is even, stays the travelling belt vestige.Result after sintering is at Cu/Al
2O
3Bonding surface stays corresponding vestige.
(3) high temperature annealing, oxidation meeting are accompanied by the grain growth of copper, and in follow-up sintering process, crystal grain can continue to grow up, and mechanical property and the surface treatment of copper brought disadvantageous effect.
Summary of the invention
The object of the present invention is to provide and a kind ofly be to reduce that the copper sheet oxidation is inhomogeneous, the method for wet oxidation copper sheet sintering direct copper that travelling belt vestige, copper sheet coarse grains are arranged.
The method of wet oxidation copper sheet sintering direct copper of the present invention comprises the steps:
The first step is carried out surface treatment in advance to copper sheet;
Second step is put into the treatment soln oxidation with surface treated copper sheet;
In the 3rd step, will clean and dry through snperoxiaized copper sheet;
In the 4th step, the copper sheet of oven dry is put into mould pre-bending;
In the 5th step, the copper sheet that pre-bending is complete is placed on sintering on ceramic plate.
Described treatment soln is NaOH and K
2S
2O
8Mixing solutions.The ratio of described treatment soln is K
2S
2O
8For 27g/L～31g/L, NaOH are 3g/L～5g/L or K
2S
2O
8For 83g/L～90g/L, NaOH are 22g/L～31g/L.The temperature of described treatment soln is 35 ℃～45 ℃ or 30 ℃～45 ℃.Oxidization time in described second step is 2min～10min or 2min～5min.In described the 3rd step, oven dry comprises hot-air seasoning or oven for drying.Described mould be shaped as circle.
The method of wet oxidation copper sheet sintering direct copper of the present invention is compared with high temperature annealing, oxidation, and wet oxidation is conducive to shorten activity time, save energy, reduces costs, and does not need to add the equipment such as annealing furnace.Compare with high temperature annealing, oxidation, the DBC product copper face crystal grain that wet oxidation is produced is tiny, is conducive to improve the mechanical property of copper sheet, eliminates the travelling belt vestige.
Description of drawings
Fig. 1 is the method steps block diagram of wet oxidation copper sheet sintering direct copper of the present invention;
Embodiment
Be described in further detail below in conjunction with the method for accompanying drawing to wet oxidation copper sheet sintering direct copper of the present invention.
As shown in Figure 1, the method for wet oxidation copper sheet sintering direct copper of the present invention comprises the steps:
(1) copper strips is cut into copper sheet.
(2) through throwing brush, microetch, the operation such as air-dry, to remove oxide compound and the coarse surface on copper sheet surface.
(3) with NaOH and K
2S
2O
8According to K
2S
2O
8For 27g/L～31g/L, NaOH are 3g/L～5g/L or K
2S
2O
8The ratio that for 83g/L～90g/L, NaOH is 22g/L～31g/L is mixed with treatment soln in glass or plastic containers, and be heated in advance 35 ℃～45 ℃ or 30 ℃～45 ℃, then copper sheet is immersed in oxidation in treatment soln, oxidization time is 2min～10min or 2min～5min.
(4) complete after oxidation copper sheet is taken out, pass through successively the cleanings such as degreaser, dilute hydrochloric acid solution, deionized water, alcohol, remove the impurity such as the remaining oxide compound in copper sheet surface and greasy dirt, be placed in baking oven at last and dry.
(5) copper sheet that will process is placed on pre-bending in circular die.
(6) copper sheet after pre-bending carries out sintering.
The complete DBC of sintering passes through the operations such as pad pasting, development, etching, produces the substrate that meets the demands.
The method of wet oxidation copper sheet sintering direct copper of the present invention is compared with high temperature annealing, oxidation, and wet oxidation is conducive to shorten activity time, save energy, reduces costs, and does not need to add the equipment such as annealing furnace.Compare with high temperature annealing, oxidation, the DBC product copper face crystal grain that wet oxidation is produced is tiny, is conducive to improve the mechanical property of copper sheet, eliminates the travelling belt vestige.
Below the preferred embodiment of the invention is illustrated, but the invention is not limited to described embodiment, those of ordinary skill in the art also can make all modification that is equal to or replacement under the prerequisite of the invention spirit, the modification that these are equal to or replacement all are included in the application's claim limited range.
Claims (7)
1. the method for wet oxidation copper sheet sintering direct copper, is characterized in that, comprises the steps:
The first step is carried out surface treatment in advance to copper sheet;
Second step is put into the treatment soln oxidation with surface treated copper sheet;
In the 3rd step, will clean and dry through snperoxiaized copper sheet;
In the 4th step, the copper sheet of oven dry is put into mould pre-bending;
In the 5th step, the copper sheet that pre-bending is complete is placed on sintering on ceramic plate.
2. the method for wet oxidation copper sheet sintering direct copper according to claim 1, is characterized in that, described treatment soln is NaOH and K
2S
2O
8Mixing solutions.
3. the method for wet oxidation copper sheet sintering direct copper according to claim 2, is characterized in that, the ratio of described treatment soln is K
2S
2O
8For 27g/L～31g/L, NaOH are 3g/L～5g/L or K
2S
2O
8For 83g/L～90g/L, NaOH are 22g/L～31g/L.
4. the method for wet oxidation copper sheet sintering direct copper according to claim 3, is characterized in that, the temperature of described treatment soln is 35 ℃～45 ℃ or 30 ℃～45 ℃.
5. the method for wet oxidation copper sheet sintering direct copper according to claim 1, is characterized in that, the oxidization time in described second step is 2min～10min or 2min～5min.
6. the method for wet oxidation copper sheet sintering direct copper according to claim 1, is characterized in that, in described the 3rd step, oven dry comprises hot-air seasoning or oven for drying.
7. the method for wet oxidation copper sheet sintering direct copper according to claim 1, is characterized in that, described mould be shaped as circle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103644670A CN103113126A (en) | 2011-11-17 | 2011-11-17 | Method for directly cladding copper by sintering wet-method copper oxide piece |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103644670A CN103113126A (en) | 2011-11-17 | 2011-11-17 | Method for directly cladding copper by sintering wet-method copper oxide piece |
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| CN103113126A true CN103113126A (en) | 2013-05-22 |
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| CN2011103644670A Pending CN103113126A (en) | 2011-11-17 | 2011-11-17 | Method for directly cladding copper by sintering wet-method copper oxide piece |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103632983A (en) * | 2013-11-22 | 2014-03-12 | 上海申和热磁电子有限公司 | Ceramic support for pre-oxidating copper sheet |
| CN108264371A (en) * | 2016-12-30 | 2018-07-10 | 南京中江新材料科技有限公司 | A kind of Zirconia reinforced alumina ceramic direct copper base plate preparation method |
| CN114230359A (en) * | 2020-09-09 | 2022-03-25 | 比亚迪股份有限公司 | Ceramic copper-clad plate and preparation method thereof |
| CN116001387A (en) * | 2022-12-31 | 2023-04-25 | 江苏富乐华半导体科技股份有限公司 | Method for increasing copper thickness by DCB |
| CN116589298A (en) * | 2023-05-23 | 2023-08-15 | 福建华清电子材料科技有限公司 | Preparation method of thick copper-clad ceramic substrate for improving warpage |
| WO2024069888A1 (en) * | 2022-09-29 | 2024-04-04 | Ｎｇｋエレクトロデバイス株式会社 | Substrate for semiconductor device and method for producing same |
| CN116589298B (en) * | 2023-05-23 | 2024-06-07 | 福建华清电子材料科技有限公司 | Preparation method of thick copper-clad ceramic substrate for improving warpage |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101747073A (en) * | 2008-12-04 | 2010-06-23 | 赫克斯科技股份有限公司 | Manufacturing method of copper foil and ceramic composite board |
-
2011
- 2011-11-17 CN CN2011103644670A patent/CN103113126A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101747073A (en) * | 2008-12-04 | 2010-06-23 | 赫克斯科技股份有限公司 | Manufacturing method of copper foil and ceramic composite board |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103632983A (en) * | 2013-11-22 | 2014-03-12 | 上海申和热磁电子有限公司 | Ceramic support for pre-oxidating copper sheet |
| CN103632983B (en) * | 2013-11-22 | 2017-11-21 | 上海申和热磁电子有限公司 | Ceramics bracket for copper sheet pre-oxidation |
| CN108264371A (en) * | 2016-12-30 | 2018-07-10 | 南京中江新材料科技有限公司 | A kind of Zirconia reinforced alumina ceramic direct copper base plate preparation method |
| CN114230359A (en) * | 2020-09-09 | 2022-03-25 | 比亚迪股份有限公司 | Ceramic copper-clad plate and preparation method thereof |
| CN114230359B (en) * | 2020-09-09 | 2023-03-14 | 比亚迪股份有限公司 | Ceramic copper-clad plate and preparation method thereof |
| WO2024069888A1 (en) * | 2022-09-29 | 2024-04-04 | Ｎｇｋエレクトロデバイス株式会社 | Substrate for semiconductor device and method for producing same |
| CN116001387A (en) * | 2022-12-31 | 2023-04-25 | 江苏富乐华半导体科技股份有限公司 | Method for increasing copper thickness by DCB |
| CN116589298A (en) * | 2023-05-23 | 2023-08-15 | 福建华清电子材料科技有限公司 | Preparation method of thick copper-clad ceramic substrate for improving warpage |
| CN116589298B (en) * | 2023-05-23 | 2024-06-07 | 福建华清电子材料科技有限公司 | Preparation method of thick copper-clad ceramic substrate for improving warpage |
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Application publication date: 20130522 |