CN103219312A - Palladium-plated gold-plated double-plating bonding copper wire - Google Patents
Palladium-plated gold-plated double-plating bonding copper wire Download PDFInfo
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- CN103219312A CN103219312A CN2013100660350A CN201310066035A CN103219312A CN 103219312 A CN103219312 A CN 103219312A CN 2013100660350 A CN2013100660350 A CN 2013100660350A CN 201310066035 A CN201310066035 A CN 201310066035A CN 103219312 A CN103219312 A CN 103219312A
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/432—Mechanical processes
- H01L2224/4321—Pulling
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/438—Post-treatment of the connector
- H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/4557—Plural coating layers
- H01L2224/45572—Two-layer stack coating
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/4557—Plural coating layers
- H01L2224/45573—Three-layer stack coating
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45644—Gold (Au) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/45664—Palladium (Pd) as principal constituent
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- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
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- Power Engineering (AREA)
- Wire Bonding (AREA)
- Non-Insulated Conductors (AREA)
Abstract
The invention discloses a palladium-plated gold-plated double-plating bonding copper wire of a three-layer structure. The innermost layer is a copper core formed due to the fact that trace metal elements are added to high-purity copper, a pure-palladium conductive layer plates the surface of the copper core, and a pure-gold conductive layer plates the surface of the pure-palladium conductive layer. The trace metal elements include tin, magnesium and aluminum.
Description
Technical field
The invention belongs to the semiconductor integrated circuit chip encapsulation field, relate in particular to the two coating copper wires of a kind of semiconductor integrated circuit chip bonding.
Background technology
Though the chip of gained had had specific function after the semiconductor integrated circuit manufacturing was finished, realize this function, must by with being connected of exterior electrical components.And semiconductor integrated circuit chip need through with the bond sequence of packaging body, finally obtain Chip Packaging, the pin that so could pass through to encapsulate is connected with exterior electrical components.In the bonding technology of chip and packaging body, all the pad on the chip is electrically connected with the pin of packaging body by bonding line.So bonding line is to realize the requisite material of chip functions.In the prior art, China granted patent CN102130067B discloses a kind of surperficial palladium-plated bonded copper wire, this palladium-plated bonded copper wire since the palladium that adopts relative low price as coating, therefore with respect to gold-plated bonding brass wire, its manufacturing cost and application cost are lower relatively, but this palladium-plated bonded copper wire is owing to adopt Metal Palladium as coating, and therefore with respect to gold-plated bonding brass wire, its electric conductivity exists not enough.China authorizes utility model patent CN201788710U to disclose the bright compound silver-gilt copper wire of a kind of high leaded light, it adopts the coating of argent as copper wire, since the excellent conductive capability of silver with and moderate relatively price, so it can replace palladium-plated bonded copper wire within the specific limits.But there is deficiency equally in this silver-plated bonding brass wire, and for example ductility is bad, and is destroyed easily in the course of processing.
And, no matter be palladium-plated bonded copper wire or silver-plated bonding brass wire, with respect to proof gold, because still there is deficiency in the electric conductivity of palladium or silver, for example resistivity is higher, and this causes its heat that is produced in the very little Chip Packaging of volume to ignore.Thereby be necessary to study a kind of alternative bonding wire of excellent performance.
Summary of the invention:
The technical problem to be solved in the present invention provides a kind of bonding brass wire with two coating, and is relatively poor to overcome existing plating palladium or silver-plated bonding brass wire electric conductivity, and extension performance defect of bad.
Two coating bonding brass wires that the present invention proposes have three-decker, and innermost layer is coated with pure palladium conductive layer for added the copper core of minor metallic element in high purity copper on the surface of this copper core, be coated with the proof gold conductive layer on the surface of pure palladium conductive layer; Wherein said minor metallic element is tin, magnesium and aluminium.
Wherein, the purity of described high purity copper is greater than 99.9995%, with described pair of coating bonding brass wire is 100 weight portions, it is the 100wt% meter, wherein the content of fine copper is 92.6 ~ 93.8wt% in the copper core, the total body burden of trace element is 1wt%, and the content of pure palladium conductive layer is 2.7 ~ 5.4wt%, and the content of proof gold conductive layer is 1 ~ 2.5wt%.
Wherein, the total content of described minor metallic element is 1wt%, comprises the tin of 0.5wt%, the magnesium of 0.3wt% and the aluminium of 0.2wt%.
Wherein, the purity of described pure palladium is greater than 99.99%, and described pure gold purity is greater than 99.99%.
Description of drawings:
Fig. 1 is the bonding brass wire of two coating structures of the present invention's proposition.
Embodiment:
Below by embodiment two coating bonding brass wires that the present invention proposes are elaborated.
Embodiment
As shown in Figure 1, two coating bonding brass wires of the present invention's proposition comprise copper core 1, plating palladium layer 2, Gold plated Layer 3.Wherein, copper core 1 is raw material for adopting purity greater than 99.9995% high purity copper, carries out the monocrystalline melting and forms by adding tin, magnesium and aluminium; Plating palladium layer 2 adopts purity greater than 99.99% Metal Palladium, by electroplating technology it is plated on the surface of copper core; Gold plated Layer 3 adopts purity greater than 99.99% metallic gold, by electroplating technology it is electroplated on the surface of plating palladium layer 2.Wherein, in the two coating bonding brass wires that contain plating palladium layer and Gold plated Layer that finally make is 100 weight portions, it is the 100wt% meter, the content of fine copper is 92.6 ~ 93.8wt% in the copper core, the content of pure palladium conductive layer is that the content of 2.7 ~ 5.4wt%, proof gold conductive layer is 1 ~ 2.5wt%, and the content of tin is that the content of 0.5wt%, magnesium is that the content of 0.3wt%, aluminium is 0.2wt%.
Introduce the concrete process of making the two coating bonding brass wires of the present invention below, this method in turn includes the following steps sequentially:
(1) be 100 weight portions in the two coating bonding brass wires that contain plating palladium layer and Gold plated Layer that finally make, it is the 100wt% meter, the purity of 92.6 ~ 93.8wt% is inserted the smelting furnace fusing greater than 99.9995% high purity copper, and add the tin of 0.5wt%, the magnesium of 0.3wt%, the aluminium of 0.2wt%, melting is drawn into the copper core through monocrystalline, the diameter of copper core is approximately 8mm, and the vertical and horizontal number of die of this copper core is 1;
(2) described copper core is slightly pulled out with after making the copper wire that diameter is approximately 3-4mm, described copper wire is annealed, annealing temperature is approximately 450-500 degree centigrade, and annealing time is approximately 20-60 minute, carries out water-cooled after the annealing;
(3) electroplate pure palladium conductive layer: electroplate the pure palladium of 2.7 ~ 5.4wt% on copper wicking surface after the annealing, to form pure palladium conductive layer, the purity of described pure palladium is greater than 99.99%;
(4) essence is pulled out for the first time: with the copper wire that is electroplate with pure palladium conductive layer of completing steps (3), essence is pulled out into the plating palladium copper wire that diameter is approximately 1-2mm;
(5) thermal annealing for the first time: the plating palladium copper wire to completing steps (4) carries out thermal annealing, and wherein the thermal annealing temperature is approximately 450-500 degree centigrade, and the time is approximately 20-60 minute;
(6) electroplate the proof gold conductive layer: electroplate the proof gold of 1 ~ 2.5wt% on the surface of plating palladium copper wire, to form the proof gold conductive layer, described pure gold purity is greater than 99.99%;
(7) essence is pulled out for the second time: the copper wire essence of completing steps (5) is pulled out into two coating bonding brass wires that diameter is approximately the 15-25 micron;
(8) thermal annealing for the second time: the two coating bonding brass wires to completing steps (6) carry out thermal annealing, and wherein the thermal annealing temperature is approximately 450-500 degree centigrade, and the time is approximately 20-60 minute;
(9) clean: the two coating bonding brass wires to completing steps (7) carry out surface clean, adopt acid solution earlier it once to be cleaned, and adopt deionized water to carry out secondary cleaning then;
The gold-plated bonding brass wire oven dry that (10) will clean up.
Wherein, preferred diameter is 1.5mm in the step (4), and preferred thermal annealing temperature is approximately 480 degrees centigrade in step (5) and (8), and the time is approximately 30 minutes.
Two coating bonding brass wires that the present invention proposes are because gold-plated two coating structures after adopting earlier the plating palladium, so it has had the conductivity of good ductility and excellence concurrently.And the technology of pulling out by twice essence, make and in the drawing process of copper wire, be tapered, avoided in drawing process, because from once being drawn into than major diameter (as 8mm of the present invention) the process of fine diameter (as 15-25 micron of the present invention), make easily and the problem that copper wire is broken therefore can reduce loss unnecessary in the production process.
Above execution mode is described in detail the present invention, but above-mentioned execution mode is not in order to limit scope of the present invention, and protection scope of the present invention is defined by the appended claims.
Claims (4)
1. two coating bonding brass wire is characterized in that:
Described copper wire has three-decker, and innermost layer is a core body, and this core body is made of the copper core that has added minor metallic element in high purity copper, is coated with pure palladium conductive layer on the surface of this copper core, is coated with the proof gold conductive layer on the surface of pure palladium conductive layer; Wherein said minor metallic element is tin, magnesium and aluminium.
2. as claimed in claim 1 pair of coating bonding brass wire is characterized in that:
Wherein, the purity of described high purity copper is greater than 99.9995%, with described pair of coating bonding brass wire is 100 weight portions, it is the 100wt% meter, wherein the content of fine copper is 92.6 ~ 93.8wt% in the copper core, the total body burden of trace element is 1wt%, and the content of pure palladium conductive layer is 2.7 ~ 5.4wt%, and the content of proof gold conductive layer is 1 ~ 2.5wt%.
3. as one of any described pair of coating bonding brass wire of claim 1-2, it is characterized in that:
The total content of described minor metallic element is 1wt%, comprises the tin of 0.5wt%, the magnesium of 0.3wt% and the aluminium of 0.2wt%.
4. as one of any described pair of coating bonding brass wire of claim 1-3, it is characterized in that:
Wherein, the purity of described pure palladium is greater than 99.99%, and described pure gold purity is greater than 99.99%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310066035.0A CN103219312B (en) | 2013-03-01 | 2013-03-01 | A kind ofly plate the gold-plated two coating bonding brass wires of palladium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310066035.0A CN103219312B (en) | 2013-03-01 | 2013-03-01 | A kind ofly plate the gold-plated two coating bonding brass wires of palladium |
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| Publication Number | Publication Date |
|---|---|
| CN103219312A true CN103219312A (en) | 2013-07-24 |
| CN103219312B CN103219312B (en) | 2015-12-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201310066035.0A Expired - Fee Related CN103219312B (en) | 2013-03-01 | 2013-03-01 | A kind ofly plate the gold-plated two coating bonding brass wires of palladium |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016093769A1 (en) * | 2014-12-11 | 2016-06-16 | Heraeus Materials Singapore Pte., Ltd. | Coated copper (cu) wire for bonding applications |
| CN106086962A (en) * | 2016-06-06 | 2016-11-09 | 上海铭沣半导体科技有限公司 | A kind of production technology encapsulated with gold-plated palladium linking copper wire |
| CN109686713A (en) * | 2018-12-11 | 2019-04-26 | 上海万生合金材料有限公司 | A kind of plating gold-palladium copper wire and preparation method thereof |
| CN116657207A (en) * | 2023-06-25 | 2023-08-29 | 上海万生合金材料有限公司 | Copper palladium-plated gold bonding wire and electroplating process thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG10201600329SA (en) * | 2016-01-15 | 2017-08-30 | Heraeus Materials Singapore Pte Ltd | Coated wire |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6178623B1 (en) * | 1997-12-16 | 2001-01-30 | Totoku Electric Co., Ltd. | Composite lightweight copper plated aluminum wire |
| KR20100109184A (en) * | 2009-03-31 | 2010-10-08 | 최승준 | Jumper wire with a nickel plating layer |
| CN102130067A (en) * | 2010-12-31 | 2011-07-20 | 四川威纳尔特种电子材料有限公司 | Surface palladium-plated bonding brass wire |
| TW201207129A (en) * | 2010-08-05 | 2012-02-16 | jin-yong Wang | Cooper bonding wire used in encapsulation and manufacturing method thereof |
-
2013
- 2013-03-01 CN CN201310066035.0A patent/CN103219312B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6178623B1 (en) * | 1997-12-16 | 2001-01-30 | Totoku Electric Co., Ltd. | Composite lightweight copper plated aluminum wire |
| KR20100109184A (en) * | 2009-03-31 | 2010-10-08 | 최승준 | Jumper wire with a nickel plating layer |
| TW201207129A (en) * | 2010-08-05 | 2012-02-16 | jin-yong Wang | Cooper bonding wire used in encapsulation and manufacturing method thereof |
| CN102130067A (en) * | 2010-12-31 | 2011-07-20 | 四川威纳尔特种电子材料有限公司 | Surface palladium-plated bonding brass wire |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016093769A1 (en) * | 2014-12-11 | 2016-06-16 | Heraeus Materials Singapore Pte., Ltd. | Coated copper (cu) wire for bonding applications |
| TWI744220B (en) * | 2014-12-11 | 2021-11-01 | 新加坡商新加坡賀利氏材料私人有限公司 | COATED COPPER (Cu) WIRE FOR BONDING APPLICATIONS |
| CN106086962A (en) * | 2016-06-06 | 2016-11-09 | 上海铭沣半导体科技有限公司 | A kind of production technology encapsulated with gold-plated palladium linking copper wire |
| CN109686713A (en) * | 2018-12-11 | 2019-04-26 | 上海万生合金材料有限公司 | A kind of plating gold-palladium copper wire and preparation method thereof |
| CN116657207A (en) * | 2023-06-25 | 2023-08-29 | 上海万生合金材料有限公司 | Copper palladium-plated gold bonding wire and electroplating process thereof |
| CN116657207B (en) * | 2023-06-25 | 2024-04-26 | 上海万生合金材料有限公司 | Copper palladium-plated gold bonding wire and electroplating process thereof |
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| Publication number | Publication date |
|---|---|
| CN103219312B (en) | 2015-12-23 |
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