CN103745963B - Cuprio goes between and is loaded with the semiconductor package of cuprio lead-in wire - Google Patents
Cuprio goes between and is loaded with the semiconductor package of cuprio lead-in wire Download PDFInfo
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- CN103745963B CN103745963B CN201410040778.5A CN201410040778A CN103745963B CN 103745963 B CN103745963 B CN 103745963B CN 201410040778 A CN201410040778 A CN 201410040778A CN 103745963 B CN103745963 B CN 103745963B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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Abstract
The invention discloses a kind of cuprio lead-in wire, including core and the coating being coated on described core outer surface, wherein, described core is to be combined, by impure copper and trace alloying element, the alloy body made, this trace alloying element can be any one or more combination in Ag, Au, Pd and Pt, it is also possible to for any one in Al and Mg or two kinds of combinations；The material of described coating is any one or more combination in Au, Pd and Pt, the sectional area of the described coating being separately positioned on same direction is account for that this cuprio pin cross section is long-pending 0.04%～0.2%, and the copper concentration contained on described coating outer surface is 20at%～70at%, the rms surface fineness of described coating is 1.0nm～4.0nm, so that this cuprio lead-in wire not only has good hot and humid reliability, cohesive, but also can effectively prevent wafer damage phenomenon, substantially increase cuprio lead-in wire and the product yield of semiconductor package.
Description
Technical field
The present invention relates to technical field of semiconductor encapsulation, concrete offer one is able to about adhesion characteristic and high humidity reliability
The cuprio lead-in wire significantly improved and the semiconductor packages being loaded with cuprio lead-in wire.
Background technology
Typically, semiconductor packages refers to utilize lead-in wire, is included in the semiconductor chip electrical connection within encapsulation
On printed circuit board.Main material many employings gold of described lead-in wire, but owing to the lead-in wire price using gold is prohibitively expensive,
Therefore in the urgent need to developing a kind of cheap lead-in wire that can replace gold lead-in wire.Accordingly, occur in that and utilize relatively inexpensive copper
The lead-in wire made, but owing to copper can produce surface oxidation phenomenon, therefore difficult life-time service and storage, and when bonding, also can
There is being derived from the conduction of heat phenomenon of substrate, thus cause lead-in wire oxidation, ultimately result in adhesion characteristic and decline.Ask described in solving
Topic, develops again surface and is coated to the copper cash of corrosion resistant metal, but balling (the free air ball: without air on copper cash line end
Ball, free ball) shape is unbalanced, and be not suitable for carrying out adhesion process, and bond properties and high humidity reliability decrease can be caused.
Summary of the invention
In order to overcome described defect, the invention provides a kind of cuprio lead-in wire and be loaded with the semiconductor packages knot of cuprio lead-in wire
Structure, this cuprio lead-in wire not only has good hot and humid reliability, cohesive, but also can effectively prevent wafer damage existing
As, substantially increase cuprio lead-in wire and the product yield of semiconductor package.
The present invention is to solve that its technical problem be the technical scheme is that a kind of cuprio lead-in wire, including core, described
Core is to be combined, by impure copper and trace alloying element, the alloy body made；By weight percentage, this microalloy
Element is the one in the A combination gold element of 0.1wt%～3.5wt% and the B combination gold element of 0.03wt%～0.7wt%, wherein,
This A combination gold element is any one or more combination in Ag, Au, Pd and Pt, and this B combination gold element is appointing in Al and Mg
Anticipating, one or both combine.
As a further improvement on the present invention, described core has following component, by weight percentage: A combines gold dollar
Element 0.3wt%～2.0wt%, this A combination gold element is any one or more combination in Ag, Au, Pd and Pt；Copper surplus.
As a further improvement on the present invention, described core has following component, by weight percentage: A combines gold dollar
Element 0.5wt%～1.5wt%, this A combination gold element is any one or more combination in Ag, Au, Pd and Pt；Copper surplus.
As a further improvement on the present invention, described core has following component, by weight percentage: A combines gold dollar
Element 0.8wt%～1.2wt%, this A combination gold element is any one or more combination in Ag, Au, Pd and Pt；Copper surplus.
As a further improvement on the present invention, this A combination gold element is Pd element.
As a further improvement on the present invention, by weight percentage, this A combination gold element is 0.3wt%Ag, 0.3wt%
The combination of Au, 0.3wt%Pd and 0.3wt%Pt.
As a further improvement on the present invention, described core has following component, by weight percentage: B combines gold dollar
Element 0.05wt%～0.5wt%, this B combination gold element is any one or the two kinds of combinations in Al and Mg；Copper surplus.
As a further improvement on the present invention, the outer surface of described core is also wrapped on one layer of coating, described quilt
The material of coating is any one or more combination in Au, Pd and Pt；Cutting of the described coating being separately positioned on same direction
Area accounts for 0.04%～0.2% that this cuprio pin cross section is long-pending, and the copper concentration contained on described coating outer surface be 20at%～
70at%。
As a further improvement on the present invention, the RMS(root mean square of described coating) surface smoothness is
1.0nm～4.0nm；The material of described coating is Pd.
As a further improvement on the present invention, the cuprio lead-in wire being positioned in this semiconductor package includes core and cladding
Coating on described core outer surface, described core is to be combined by impure copper and trace alloying element to make
Alloy body, by weight percentage, this trace alloying element be 0.1wt%～3.5wt% A combination gold element and 0.03wt%～
0.7wt% B combination gold element in one, wherein, this A combination gold element be in Ag, Au, Pd and Pt any one or many
Kind of combination, this B combination gold element is any one or the two kinds of combinations in Al and Mg；
The material of another described coating is any one or more combination in Au, Pd and Pt, is positioned on same direction
The sectional area of described coating accounts for 0.04%～0.2% that this cuprio pin cross section is long-pending, and contain on described coating outer surface
Copper concentration is 20at%～70at%, the RMS(root mean square of described coating) surface smoothness be 1.0nm～
4.0nm。
The invention has the beneficial effects as follows: the cuprio lead-in wire in the present invention includes core and is coated on described core outer surface
Coating, wherein, described core is to be combined the alloy body made, this trace by impure copper and trace alloying element
Alloying element can be any one or more combination in Ag, Au, Pd and Pt, it is also possible to for any one in Al and Mg or
Two kinds of combinations；The material of described coating is any one or more combination in Au, Pd and Pt, is separately positioned on same direction
The sectional area of described coating is account for that this cuprio pin cross section is long-pending 0.04%～0.2%, and contains on described coating outer surface
Copper concentration be 20at%～70at%, the rms surface fineness of described coating is 1.0nm～4.0nm, so that this cuprio draws
Line not only has good hot and humid reliability, cohesive, but also can effectively prevent wafer damage phenomenon, is greatly improved
Cuprio lead-in wire and the product yield of semiconductor package.
Accompanying drawing explanation
Fig. 1 is the manufacture method flow chart of cuprio of the present invention lead-in wire；
Fig. 2 (a～d) is the balling surface shape picture under a scanning electron microscope of cuprio of the present invention lead-in wire；
Fig. 3 (a～d) is the characteristic variations chart of the cuprio lead-in wire in the section Example cited by the present invention.
Detailed description of the invention
With reference to the accompanying drawings to a preferred embodiment of the present invention will be described in detail.Embodiments of the invention are intended to more comprehensively
Ground is to have the technical staff of Conventional wisdom in this technical field to explain in detail the technological thought of the present invention, and embodiments of the invention
Multiple different shape can be deformed into, it is not limited to below embodiment.
One, cuprio lead-in wire is made
Fig. 1 shows the manufacture method flow process that cuprio of the present invention goes between；Table 1 shows the embodiment of the present invention 1～30
Component with core described in comparative example 1～5；Table 2 show the embodiment of the present invention 31～53 and comparative example 6～7 in be coated with
The structure of the cuprio lead-in wire of coating.
The manufacture method of described cuprio lead-in wire was made up of following several stages: i.e., S10: prepare the stage of core；S12: right
The outer surface of described core carries out the stage of pretreatment；S14: form the stage of coating on the outer surface of described core；
S16: the described core being formed with described coating is carried out wire drawing process, to form the stage of lead-in wire.
S10: preparing the stage of core, it is the copper material of 99.999% that described core can be selected for as purity；Also can be selected for as this
The alloy body being made up of impure copper and trace alloying element combination described in bright, wherein, described alloying element is permissible
It is at least one element in silver (Ag), gold (Au), palladium (Pd) and platinum (Pt), it is also possible to be in aluminum (Al) and magnesium (Mg)
At least one element.At least one element in described alloying element is silver (Ag), gold (Au), palladium (Pd) and platinum (Pt)
Time, in the range of its content can account for about 0.1wt%～3.5wt% of whole core；When described alloying element is aluminum (Al) and magnesium (Mg)
In at least one element time, in the range of its content can account for about 0.03wt%～0.7wt% of whole core.
S12: the outer surface of described core is carried out the stage of pretreatment, the appearance of core described in available plasma cleaning
Face, above-mentioned plasma then may utilize vacuum plasma device or utilizes atmospheric plasma device to be formed, and for life
Become the electric power range that this plasma is used about in the range of 5W～100W.
In addition to utilizing plasma cleaning, described core also can be cleaned by degreasing process or pickling process.
In the embodiment cited by the present invention and comparative example, the outer surface of described core is carried out the stage of pretreatment,
When being coated with coating on described core outer surface, described coating can contain certain density copper.Such as: utilize
Atmospheric plasma device implements plasma etching process processes on the outer surface of described core, to remove on described core outer surface
The oxide-film retained or foreign body, it is simple to adjust the diffusion between coating and core, and adjust copper at coating table
Diffusion on face.Copper concentration on described coating outer surface can pass through the rising of the heat treatment step effect hereafter illustrated
Effect reaches 20at%～70at%.When the outer surface of described coating has certain copper concentration, copper and described conjunction can be induced
Complete solid solution between gold element and coating, to be easy to melt when forming balling, and then makes the balling shape melted have
Prominent outmoded performance, and when bonding for 1 time, and there is uniform contact surface, to improve the equilibrium of bond properties between chip
Property.
S14: form the stage of coating on the outer surface of described core, described coating can be around being coated on described core
On the outer surface of material.
Described coating can pass through electrolytic gold plating, electroless gold plating, evaporation (evaporation) or evaporation
Etc. (deposition) method is formed.Here, described coating can have in gold (Au), palladium (Pd) and platinum (Pt)
At least one element and inevitable impurity.Such as: coating can contain only palladium (Pd) element.For another example, also can use
Alkalescence gold plating solution containing palladium element implements gold-plated process, forms certain thickness coating on core outer surface.?
In embodiment cited by the present invention, the thickness of described coating is up to 5nm～15nm.
S16: the described core being formed with described coating is carried out wire drawing process, to form the stage of lead-in wire, available
Wire-drawing frame carries out wire drawing process to the described core being formed with described coating, to reduce described core and described coating
Sectional area.Accordingly, the cuprio diameter wire ultimately formed is up to 12 μm～25 μm, and coating then can account for cuprio pin cross section and amass
0.04%～0.2%.
S18: the surface of described lead-in wire is carried out the stage of pretreatment, the surface smoothness of lead-in wire can be increased.Utilize air
Pressure plasma apparatus implements plasma etching process processes on the surface of described lead-in wire, to increase the fineness of described wire surface, makes
Described lead-in wire can have the rms surface fineness of about 1.0nm～4.0nm.When described cuprio lead-in wire has certain any surface finish
When spending, compared with the lead-in wire with smooth surface, it is possible to provide bigger surface area, therefore lead-in wire is being bonded in printed circuit board
Deng in 2 bonding process on machine plate, by increasing capacitance it is possible to increase the frictional force between lead-in wire and printed circuit board, and then 2 times can be reduced
Poor cohesion rate, and the working performance of 2 bondings can be improved.
Additionally, the manufacture method of described cuprio lead-in wire may also include the lead-in wire to selectivity wire drawing and carries out the rank of heat treatment
Section.Temperature in this heat treatment stages is up to 400 DEG C～700 DEG C.This heat treatment step can be alleviated by wire-drawing process wire drawing
Lead-in wire processing hardening phenomenon.As it has been described above, this heat treatment step can remove the foreign body remaining on wire surface up hill and dale.
Another in this heat treatment step the element such as the palladium in coating (Pd) can spread to inside core, therefore along with implementing this heat treatment
The difference of the heat treatment time of operation, peripheral gas and temperature, the copper concentration on coating outer surface would also vary from.
By the enforcement of above-mentioned operation, form cuprio of the present invention lead-in wire.Additionally, also can be according to listed in the present invention
For embodiment and comparative example condition, be optionally suitable for above-mentioned process stages.Such as, the lead-in wire in comparative example 2～5 of the present invention
Manufacturing process, can omit the stage (S14) forming coating on the outer surface of described core.Equally, in the present invention to formation
There is the lead-in wire manufacturing process of the embodiment of coating, it is possible to omit the stage that wire drawing lead-in wire is carried out heat treatment.
Table 1 makes the component in each embodiment of described core and comparative example
Unit: percentage by weight (wt%)
Table 2 is formed with the structure of the cuprio lead-in wire of coating
Embodiment shown in table 1 1～30 and comparative example 1～5 in, the copper material that lead-in wire core can use purity to be 99.999%；
May be used without the alloy body being made up of impure copper and trace alloying element combination of the present invention, described alloy unit
Element can be at least one element in silver (Ag), gold (Au), palladium (Pd) and platinum (Pt), it is also possible to be aluminum (Al) and magnesium
(Mg) at least one element in.
Embodiment shown in table 2 31～53 and comparative example 6～7 in, described coating is for having sectional area ratio about
At least one element in gold (Au), palladium (Pd) and the platinum (Pt) of 0.025%～0.3%, this is equivalent to the copper ultimately formed
Base diameter wire is about 12 μm～25 μm, and the thickness of coating then amasss ratio for multiple section during 5nm～15nm.
Two, cuprio lead-in wire the performance test results and explanation
Below by embodiment cited by the present invention in table 1 and 2 and the high humidity reliability of comparative example and adhesion characteristic test
Method and result are described in detail.
Method of testing of the present invention is: 1. carry out the lead-in wire line end made according to different condition at electric arc heated
Reason, to form the balling of 2 times of sizes of a diameter of copper wire diameter, and is bonded in described balling on liner, then utilizes bonding
The performance of 1 bonding is measured by tension tester (bond pull tester, Dage 4000).2. glued by ultrasound wave
The mode that conjunction processes, bonds lead-in wire on the lead frames, then utilizes bond-pull tester, it is carried out 50000 times
Measure, to complete the fraction defective of 2 bondings.3. simultaneously when carrying out 1 bonding test, further through to semiconductor chip surface or
There is the phenomenon peeled off, chip becomes the physical properties such as hole (chipcratering) phenomenon to damage in liner top, with altogether 500 times
There is the ratio of damage phenomenon, embody wafer damage rate.4. it is soaked in acid solution also by by the lead-in wire of different condition
In the middle of, after certain time, the method reaching to measure its performance during the 70% of initial weight, the oxidative resistance of lead-in wire is carried out
Measure.5. for the high humidity reliability of lead-in wire, the semiconductor packages being bonded by the lead-in wire of different condition loads uHAST
(unbiased Highly Accelerated temperature and humidity Stress Test, 130 DEG C/85% phase
To humidity) indoor, after respectively through 96 hours, 300 hours and 500 hours, by the engaged test of electric test
(open-short), resistance value is risen than initial resistivity value
The lead-in wire of more than 20% is set to bad product.6. for balling old, by different condition, a diameter of copper cash is formed
After the balling of 2 times of sizes of diameter, optical microscope and scanning electron microscope (SEM) is utilized to be observed, and according to balling
Spherical degree and surface configuration, be divided into A(the highest), B(high), in C() and D(low) grade.
Table 3 shows that each embodiment to core described in table 1 and comparative example carry out the result of various performance test；Table 4
Show that each embodiment going between the cuprio being formed with coating in table 2 and comparative example carry out the result of performance test.
Each embodiment of core described in table 3 table 1 and the performance test results of comparative example
Table 4 table 2 is formed each embodiment and the performance test results of comparative example of the cuprio lead-in wire of coating
As shown in table 1, the core of cuprio lead-in wire can be to be combined by impure copper and trace alloying element to make
Alloy body, in the embodiment that the present invention enumerates, described alloying element can be silver (Ag), gold (Au), palladium (Pd) and platinum
(Pt) at least one element in, it is also possible to be at least one element in aluminum (Al) and magnesium (Mg).When described alloying element is
During at least one element in silver (Ag), gold (Au), palladium (Pd) and platinum (Pt), its content can account for the pact of whole core
In the range of 0.1wt%～3.5wt%；When at least one element during described alloying element is aluminum (Al) and magnesium (Mg), its content
In the range of about 0.03wt%～0.7wt% of whole core can be accounted for.Such as: described alloying element can be a kind of element, in core
Platinum (Pt) containing 0.5wt%, copper surplus (as shown in the embodiment 3 in table 1)；Described alloying element can be multiple element
Combination, as contained silver (Ag) 0.3wt%, gold (Au) 0.3wt%, palladium (Pd) 0.3wt% and platinum (Pt) 0.3wt%, copper in core
Surplus (embodiment 14 as in table 1).
Compared with containing only copper with core (comparative example 2～5), comprise the alloying element of about 0.3wt%～2.0wt% scope
More can improve the chemical stability of core, therefore under high temperature, super-humid conditions, also can successfully prevent core from corroding, and then improve
The unfailing performance of overall cuprio lead-in wire.Additionally, the liner being formed on semiconductor chip, as bonded cuprio lead-in wire on aluminum pad
In operation, stable intermediate compound can be formed, increase the bonding between liner and balling (free air ball) accordingly strong
Degree, and 1 adhesion characteristic can be effectively improved.About alloying element content to high temperature, high moisture performance and the effect of 1 adhesion characteristic
To be elaborated in more detail thereafter.
But, when core contains only copper, this core can have the RMS(root mean of about 1.0nm～4.0nm
Square) surface smoothness (comparative example 2～5 as in table 2), such as, when containing the copper of 99.999% in core, it has
The rms surface fineness of 3.0nm；When core has the rms surface fineness of about 1.0nm～4.0nm, itself and institute of the present invention
State and there is the core of the rms surface fineness being approximately less than 1.0nm compare (embodiment 1～30 as in table 1), the more overstriking of its surface
Rough, and the surface area of core can be strengthened, accordingly, in 2 the bonding works being bonded on the machine plates such as printed circuit board by cuprio lead-in wire
In sequence, can increase cuprio lead-in wire and printed circuit board between frictional force, with reduce 2 times bonding fraction defective, and improve 2 times glue
The working performance closed.
Therefore, of the present invention containing being also coated with a coating on the outer surface of the core of alloying element (such as table 2 institute
Show), the material of described coating is any one or more combination in Au, Pd and Pt, and table 4 provides in table 2 institute of the present invention
The performance test results of the cuprio lead-in wire being coated with coating shown.
In the present invention, described coating uniform ring is on the outer surface being coated on core, and is positioned on same direction
The sectional area of described coating accounts for long-pending 0.04%～0.2%(optimal of cuprio pin cross section), such as: when core uses a diameter of 12
During the filamentary material of μm～25 μm, the thickness of described coating is up to about 5nm～15nm.Here, the sectional area of described coating
Ratio is the biggest, and the coating around core will be the thickest, and the sectional area ratio of coating is the least, then coating will be the thinnest.
When coating is surrounded on core outer surface with fixed thickness, on cuprio wire surface will step chemical stability high
Metal, therefore high humidity reliability and the oxidative resistance of cuprio lead-in wire can be effectively improved.But, when coating is blocked up, formed 1 time
During the required balling of bonding, copper and coating will be hardly formed stable solid solution, therefore can reduce balling old,
And 1 bond properties can be reduced.Cuprio lead-in wire in the present invention uses the coating with 0.04%～0.2% sectional area ratio,
The high humidity unfailing performance of described cuprio lead-in wire can not only be improved, 1 adhesion characteristic can also be improved simultaneously.
Additionally, can illustrate from table 4, copper concentration most preferably 20at%～70at% that described coating outer surface contains.
Such as: when in described coating containing palladium (Pd) element, the concentration of palladium (Pd) can be 30at%, and copper concentration can be then
70at%.When by the elementary composition coatings such as palladium (Pd) entirely around the copper concentration on core, and coating surface be 0at%～
During 20at%, the formation of incomplete solid solution can cause the outmoded performance of balling melted the most obvious.But when such as the embodiment of the present invention
Shown in, when coating outer surface contains the copper concentration of about 20at%～70at%, the lead-in wire needed for 1 bonding melts operation
In, the complete solid solution of copper and described alloying element can be induced, to be easy to melt when forming balling, and then make the balling shape melted
Shape has prominent outmoded performance.
Fig. 2 (a～d) is that the balling surface of cuprio of the present invention lead-in wire is at scanning electron microscope (scanning
Electron microscopy) under shape picture.
If Fig. 2 (a) is the balling schematic surface being divided into " A(is the highest) " level because balling old is prominent, this
The smooth surface of balling, its shape almost spherical.Balling shown in Fig. 2 (b) is divided into balling old " B(high) " level,
It has the surface of relative smooth and is relatively similar to spherical shape.It is outmoded that balling shown in Fig. 2 (c) is divided into balling
Property " in C() " level, its part surface is with indenture (dent) or recess (recess).Balling shown in Fig. 2 (d) is divided into
Balling old " D(is low) " level, its part surface is with protuberance (protrusion), and it is spherical how many shapes deviate from.
As shown in table 5, the embodiment of the present invention 14 and embodiment 46 are divided into balling old O | " A(is the highest) " level, and
Present the extremely prominent outmoded performance of balling.The lead-in wire core of embodiment 14 and embodiment 46 contains the silver of 0.3wt%
(Ag), the alloying element of the platinum (Pt) of the palladium (Pd) of the gold (Au) of 0.3wt%, 0.3wt% and 0.3wt%, remaining be copper and
Inevitably impurity.As it has been described above, when the lead-in wire core in the present invention comprises silver (Ag), gold (Au), palladium (Pd) and platinum
Etc. (Pt), during alloying element, the shape almost spherical of balling, the outmoded performance of its balling is improved, and then makes 1 bond properties
Also it is improved significantly.
Additionally, the embodiment of the present invention 46 lead-in wire core in containing the silver (Ag) of 0.3wt%, the gold (Au) of 0.3wt%,
The alloying elements such as the palladium (Pd) of 0.3wt% and the platinum (Pt) of 0.3wt%, remaining is copper and inevitable impurity, and will cut
Area ratio is that the palladium (Pd) of 0.1% is as coating.Now, lead-in wire core presents the prominent balling old of highest level
Can, and its 2 Poor cohesion rates and oxidative resistance all improve many than the lead-in wire core in comparative example 1 or embodiment 14.
I.e. lead-in wire balling old in embodiment 46,1 adhesion characteristic, 2 Poor cohesion rate oxidative resistances, high humidity reliability properties
All present extremely prominent result, highlight this is because the core of lead-in wire or even coating are distributed with chemical stability
Metal, containment includes the core oxidation of copper accordingly, and is effectively increased the unfailing performance of core.
Table 5
Fig. 3 (a～d) is in the middle of the embodiment cited by the present invention and comparative example, about the characteristic variations of various lead-in wires
Chart.The exemplary in nature that experimental data is the embodiment described in table 1-4 and comparative example in Fig. 3 (a～d), will be with reality at this
Based on testing data, review core and coating characteristic variations at different conditions.
Fig. 3 a is in the middle of the embodiment cited by the present invention and comparative example, according to 2 bondings of wire surface fineness
Fraction defective and balling old schematic diagram.As shown in Figure 3 a, the core of the comparative example 2～5 of the present invention does not contains other alloy
Element, and comprise only copper and inevitable impurity.Lead-in wire in comparative example 2～5 has the rms surface of 2,3,4 and 5nm respectively
Fineness, the lead-in wire in comparative example 1 then has the rms surface fineness of 0.9nm.
As shown in Figure 3 a, along with the raising of surface smoothness, the fraction defective of 2 bondings will decline therewith.This is because
When lead-in wire is implemented plasma treatment to improve its surface smoothness, the frictional force between lead-in wire and adhesive covered pads will increase
Add, to such an extent as in the case of the diameter gone between and operation profit diminish, remain to reduce operation fraction defective.Additionally, work as rms surface
When fineness is 1nm～4nm, the outmoded performance of its balling highlights, but when rms surface fineness is 5nm, the balling of lead-in wire is outmoded
Performance can reduce on the contrary.Accordingly, the lead-in wire in the present invention can have the surface smoothness of 1.0nm～4.0nm.Accordingly so that institute
The balling old stating lead-in wire highlights, and reduces by 2 Poor cohesion rates, and has prominent adhesion characteristic.
Fig. 3 b is according to the alloying element kind contained in core and the high humidity reliability of rock mechanism and wafer damage rate
Schematic diagram.In fig 3b, it is illustrated that by changing the rock mechanism of core, only add the embodiment of the present invention 1 of a kind of alloying element
～13 and comparative example 1.Such as, palladium (Pd) containing 0.1wt% and the embodiment of the present invention 1 that remaining composition is copper with
" Pd0.1 " is illustrated simultaneously.
As shown in Figure 3 b, containing at least one element in silver (Ag), gold (Au), palladium (Pd) and platinum (Pt) in core
Time, its high humidity unfailing performance is improved significantly.Such as, time in core containing palladium (Pd) element of more than 0.3wt%, high temperature,
Under the conditions of high humidity reliability testing after 96 hours, bad incidence rate is 0%.Additionally, in high temperature, high humidity reliability testing
Under the conditions of after 300,500 hours, bad incidence rate all reaches 0%, it means that core contains respectively 0.5wt%,
Palladium (Pd) element of more than 0.8wt%.Meanwhile, when the content of alloying element increases to more than 2.0wt%, it may occur that chip becomes hole etc.
Chip damage phenomenon, and wafer damage rate can be caused to rise.As it has been described above, this is because alloying element and the common shape of copper
Becoming stable solid solution, to improve high temperature, high moisture performance, but when the content of alloying element is excessive, the outmoded performance of balling is on the contrary
Can reduce, and increase the hardness of balling, cause when carrying out adhesion process, the bonding effect between liner and the balling of bottom is not
Good or cause bottom pad failure.As shown in embodiment 9～13, when palladium (Pd) element containing more than 1.5wt% in core
Time, can reduce by 1 bond properties, and from palladium (Pd) element containing more than 2.5wt%, it will there is wafer damage phenomenon.
The lead-in wire of the embodiment of the present invention contains the alloying element of about 0.3wt%～2.0wt%, can have prominent in 96 hours
High humidity reliability, and can effectively prevent wafer damage phenomenon；And when the alloying element containing 0.5wt%～1.5wt%, then can be
Have prominent high temperature, high humidity reliability in 300 hours, and have 1 bond properties of more than 4.0gf；And containing
During the alloying element of 0.8wt%～1.2wt%, it will had prominent high temperature, high humidity reliability in 500 hours, and have
1 bond properties of more than 5.0gf.
Fig. 3 c is 2 Poor cohesion rates according to the wire surface copper concentration forming coating and the signal of balling old
Figure.In figure 3 c, it is illustrated that 2 the Poor cohesion rates gone between in the embodiment of the present invention 33～35, embodiment 38～41 and balling
Old measurement data.The lead-in wire core of diagram contains copper and foreign body, then contains palladium element, and coating in coating
Sectional area be equivalent to that pin cross section is long-pending 0.1%, have on coating surface respectively 0at%, 10at%, 20at%, 45at%,
The copper concentration of 70at%, 80at% and 90at%.Here, by AES ANALYSIS ON DEPTH PROFILES method, the copper measuring coating surface is dense
Degree.
As shown in Fig. 3 c and table 6, when the copper concentration on coating surface increases to 70at%, 2 Poor cohesion rates of lead-in wire will
Can maintain certain level, its scope is in 100ppm～160ppm, compared with the 9980ppm of comparative example 1, and 2 Poor cohesion rates
Substantially reduced.Additionally, when the copper concentration on coating surface increases to more than 80at%, 2 Poor cohesion rates of lead-in wire will
Increase to 780ppm.This is compared with comparative example 1, although be the lowest level, but owing to the copper concentration on coating surface is too much, and
The metal concentration of exodermis is very few, thus causes retaining on surface exodermis, so that the hardness on surface rises, then causes 2 times
Bond properties declines.
Additionally, the increase of coating surface copper concentration, the old of balling and 1 bond properties can be improved.This is still
Because the increase of copper concentration, it is simple to form complete molten mass between copper and alloying element, and then when forming balling, more approximate
In spherical.Here, wafer damage rate and high humidity reliability are not affected by chip surface copper concentration change, in all of present invention
In the middle of embodiment, all present prominent characteristic, and when surface copper concentration is 0%～80%, its oxidation resistent susceptibility is the most prominent.
In the present invention lead-in wire coating surface when having the copper concentration of about 20at%～70at%, its balling old, bonding spy
Property and high humidity reliability are the most prominent.
Table 6
Table 7 is about the adhesion characteristic according to coating thickness and the list of high humidity reliability.As shown in table 7, coating
Sectional area ratio the biggest, i.e. along with the increase of coating thickness, 2 times Poor cohesion rate can reduce therewith, and oxidative resistance and
High humidity reliability can be increased.But when the sectional area ratio of coating is more than 0.3%, wafer damage rate will increase to
1.4%, and 1 bond properties can be caused to reduce.As it has been described above, when coating is formed the palladium that thick chemical stability is big
Etc. (Pd), during metallic element, its hardness will increase, and high humidity reliability is improved, if but coating is blocked up, and will be in shape
When becoming balling, playing blanketing to forming complete solid solution, so that reducing by 1 adhesion characteristic, and chip can be caused to become hole etc.
Wafer damage phenomenon.Lead-in wire in the present invention has sectional area ratio and is about the coating of 0.04%～0.2%, its adhesion characteristic pole
It is prominent, and high humidity reliability is significantly improved.
Table 7
High humidity reliability when Fig. 3 d is to add aluminum (Al) and magnesium (Mg) element in lead-in wire and 1 bond properties schematic diagram.
In Fig. 3 d, it is illustrated that the lead-in wire in the embodiment of the present invention 16～21.
As shown in Figure 3 d, the addition of aluminum (Al) and magnesium (Mg) is the biggest, more can improve high humidity reliability and 1 cohesive
Energy.Meanwhile, when the addition of aluminum (Al) and magnesium (Mg) reaches more than 0.5wt%, 1 bond properties can be lowered.Due to this
Lead-in wire in bright contains aluminum (Al) or the magnesium (Mg) of about 0.05wt%～0.5wt%, therefore has extremely prominent high humidity reliable
Property and adhesion characteristic.
Embodiment provided above, only in order to composition and effect of the present invention to be described, not thereby carrys out to arrest the special of the limit present invention
Profit scope, therefore the change of the most all equivalent structures and the similar amendment without departing from the present invention, be all under the jurisdiction of the patent of the present invention
Category.
Claims (9)
1. a cuprio lead-in wire, including core, described core is to be combined by impure copper and trace alloying element to make
Alloy body；It is characterized in that: by weight percentage, this trace alloying element is that the A of 0.1wt%～3.5wt% combines gold dollar
One in the B combination gold element of element and 0.03wt%～0.7wt%, wherein, this A combination gold element is in Ag, Au, Pd and Pt
Any one or more combination, this B combination gold element is any one or the two kinds of combinations in Al and Mg；At described core
Being also wrapped on one layer of coating on outer surface, the material of described coating is any one or more combination in Au, Pd and Pt,
The sectional area of the described coating being separately positioned on same direction accounts for 0.04%～0.2% that this cuprio pin cross section is long-pending, described quilt
The copper concentration contained on coating outer surface is 20at%～70at%, and the rms surface fineness of described coating be 1.0nm～
4.0nm；
The manufacture method of described cuprio lead-in wire, was made up of following several stages:
S10: prepare the stage of core: it is to be combined by impure copper and trace alloying element to make that described core is selected
Alloy body, wherein, described alloying element is at least one element in Ag, Au, Pd and Pt, or described alloying element be Al and
At least one element in Mg；When at least one element during described alloying element is Ag, Au, Pd and Pt, its content accounts for whole
In the range of 0.1wt%～3.5wt% of individual core；When at least one element during described alloying element is Al and Mg, it contains
In the range of amount accounts for 0.03wt%～0.7wt% of whole core；
S12: the outer surface of described core is carried out the stage of pretreatment: utilize plasma or degreasing process or pickling process clear
Washing the outer surface of described core, above-mentioned plasma utilizes vacuum plasma device or utilizes atmospheric plasma device to be able to shape
Become；
S14: form the stage of coating on the outer surface of described core: by electrolytic gold plating, electroless gold plating or evaporation side
Method is coated with one layer of coating on the outer surface of described core, and the material of described coating is any one in Au, Pd and Pt
Planting or multiple combination, the thickness of described coating reaches 5nm～15nm；
S16: the described core being formed with described coating is carried out wire drawing process, to form the stage of cuprio lead-in wire: utilize and draw
Silk device carries out wire drawing process to the described core being formed with described coating, to reduce cutting of described core and described coating
Area, the cuprio diameter wire ultimately formed reaches 12 μm～25 μm, and the sectional area of the described coating being positioned on same direction
Account for that this cuprio pin cross section is long-pending 0.04%～0.2%, the copper concentration that described coating outer surface contains be 20at%～
70at%；
S18: the surface going between described cuprio is carried out the stage of pretreatment: utilize atmospheric plasma device to draw at described cuprio
Plasma etching process processes is implemented on the surface of line, to increase the fineness of described cuprio wire surface, makes described cuprio lead-in wire have
The rms surface fineness of 1.0nm～4.0nm.
Cuprio the most according to claim 1 goes between, it is characterised in that: described core has following component, by weight percentage
Than meter: A combination gold element 0.3wt%～2.0wt%, this A combination gold element be in Ag, Au, Pd and Pt any one or many
Plant combination；Copper surplus.
Cuprio the most according to claim 2 goes between, it is characterised in that: described core has following component, by weight percentage
Than meter: A combination gold element 0.5wt%～1.5wt%, this A combination gold element be in Ag, Au, Pd and Pt any one or many
Plant combination；Copper surplus.
Cuprio the most according to claim 3 goes between, it is characterised in that: described core has following component, by weight percentage
Than meter: A combination gold element 0.8wt%～1.2wt%, this A combination gold element be in Ag, Au, Pd and Pt any one or many
Plant combination；Copper surplus.
5. go between according to the cuprio according to any one of claim 1-4, it is characterised in that: this A combination gold element is Pd element.
6. go between according to the cuprio according to any one of claim 1-4, it is characterised in that: by weight percentage, this A combines
Gold element is the combination of 0.3wt%Ag, 0.3wt%Au, 0.3wt%Pd and 0.3wt%Pt.
Cuprio the most according to claim 1 goes between, it is characterised in that: described core has following component, by weight percentage
Than meter: B combination gold element 0.05wt%～0.5wt%, this B combination gold element are any one or the two kinds of groups in Al and Mg
Close；Copper surplus.
8. go between according to the cuprio described in claim 4 or 7, it is characterised in that: the material of described coating is Pd.
9. the semiconductor package being loaded with cuprio lead-in wire, it is characterised in that: it is positioned at the copper in this semiconductor package
Base lead-in wire includes core and the coating being coated on described core outer surface, and described core is by impure copper, Yi Jiwei
Amount alloying element combines the alloy body made, and by weight percentage, this trace alloying element is the A of 0.1wt%～3.5wt%
Combination gold element and 0.03wt%～0.7wt% B combination gold element in one, wherein, this A combination gold element be Ag, Au,
Any one or more combination in Pd and Pt, this B combination gold element is any one or the two kinds of combinations in Al and Mg；
The material of another described coating is any one or more combination in Au, Pd and Pt, and be positioned on same direction is described
The sectional area of coating accounts for 0.04%～0.2% that this cuprio pin cross section is long-pending, and the copper contained on described coating outer surface
Concentration is 20at%～70at%, and the rms surface fineness of described coating is 1.0nm～4.0nm.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410040778.5A CN103745963B (en) | 2014-01-28 | 2014-01-28 | Cuprio goes between and is loaded with the semiconductor package of cuprio lead-in wire |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410040778.5A CN103745963B (en) | 2014-01-28 | 2014-01-28 | Cuprio goes between and is loaded with the semiconductor package of cuprio lead-in wire |
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|---|---|
| CN103745963A CN103745963A (en) | 2014-04-23 |
| CN103745963B true CN103745963B (en) | 2016-09-28 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101925992A (en) * | 2009-03-17 | 2010-12-22 | 新日铁高新材料株式会社 | Bonding wire for semiconductor |
| CN102130067A (en) * | 2010-12-31 | 2011-07-20 | 四川威纳尔特种电子材料有限公司 | Surface palladium-plated bonding brass wire |
| TW201207129A (en) * | 2010-08-05 | 2012-02-16 | jin-yong Wang | Cooper bonding wire used in encapsulation and manufacturing method thereof |
| CN103219246A (en) * | 2013-03-01 | 2013-07-24 | 溧阳市虹翔机械制造有限公司 | Manufacturing method of palladium-plated silver-plated double-plating bonding copper wire |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8610291B2 (en) * | 2006-08-31 | 2013-12-17 | Nippon Steel & Sumikin Materials Co., Ltd. | Copper alloy bonding wire for semiconductor device |
| JP4904252B2 (en) * | 2007-12-03 | 2012-03-28 | 新日鉄マテリアルズ株式会社 | Bonding wires for semiconductor devices |
-
2014
- 2014-01-28 CN CN201410040778.5A patent/CN103745963B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101925992A (en) * | 2009-03-17 | 2010-12-22 | 新日铁高新材料株式会社 | Bonding wire for semiconductor |
| TW201207129A (en) * | 2010-08-05 | 2012-02-16 | jin-yong Wang | Cooper bonding wire used in encapsulation and manufacturing method thereof |
| CN102130067A (en) * | 2010-12-31 | 2011-07-20 | 四川威纳尔特种电子材料有限公司 | Surface palladium-plated bonding brass wire |
| CN103219246A (en) * | 2013-03-01 | 2013-07-24 | 溧阳市虹翔机械制造有限公司 | Manufacturing method of palladium-plated silver-plated double-plating bonding copper wire |
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| CN103745963A (en) | 2014-04-23 |
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Address after: 215301 room 5, 138 Chenghu Road, Kunshan Development Zone, Suzhou, Jiangsu. Patentee after: Ming Kai electronic (Kunshan) Limited by Share Ltd Address before: 215301 Kunshan Development Zone, Suzhou City, Jiangsu Province, north side of Peng Long Honghu Road, west of Xinxing road. Patentee before: Ming Electronics (Kunshan) Co., Ltd. Kaiyi |