JP2004014884A - Bonding wire - Google Patents

Bonding wire Download PDF

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Publication number
JP2004014884A
JP2004014884A JP2002167809A JP2002167809A JP2004014884A JP 2004014884 A JP2004014884 A JP 2004014884A JP 2002167809 A JP2002167809 A JP 2002167809A JP 2002167809 A JP2002167809 A JP 2002167809A JP 2004014884 A JP2004014884 A JP 2004014884A
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Japan
Prior art keywords
core material
bonding
wire
bonding wire
coating layer
Prior art date
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Pending
Application number
JP2002167809A
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Japanese (ja)
Inventor
Shingo Kaimori
改森　信吾
Takeshi Nonaka
野中　毅
Masato Fukagaya
深萱　正人
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Sumitomo Electric Wintec Inc
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Sumitomo Electric Wintec Inc
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Application filed by Sumitomo Electric Wintec Inc filed Critical Sumitomo Electric Wintec Inc
Priority to JP2002167809A priority Critical patent/JP2004014884A/en
Publication of JP2004014884A publication Critical patent/JP2004014884A/en
Pending legal-status Critical Current

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  • Wire Bonding (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a bonding wire that is excellent in ball forming property and can suppress the damage to an integrated circuit element at bonding. <P>SOLUTION: This bonding wire has a core material and a coating layer formed on the core material. The core material is constituted of a material other than gold having micro-Vickers hardness of ≤80 Hv. The coating layer is constituted of a metal having a melting point higher than that of the core material by ≥300°C and an oxidation resistance higher than that of copper. When the materials of the core material and coating layer are limited in this way, balls, particularly, small-diameter balls having nearly complete roundness can be formed stably and highly reliable bonding can be obtained. <P>COPYRIGHT: (C)2004,JPO

Description

【０００１】
【発明の属する技術分野】
本発明は、集積回路素子（ＩＣ、ＬＳＩ、トランジスタ等）上の電極と、回路配線基盤（リードフレーム、セラミックス基盤、プリント基盤等）の導体配線とを接続するのに好適なボンディングワイヤーに関するものである。
【０００２】
【従来の技術】
集積回路素子と回路配線基板との接続法としては、ボールボンディング法、ウェッヂボンディング法、半田接続法、抵抗溶接法等が行われている。その中でも金細線のボンディングワイヤーを用いたボールボンディング法が一般的である。
【０００３】
通常、ボールボンディング法は以下のプロセスで行われる。移動自在なキャピラリー（以下「ボンディングツール」という）にガイドされたワイヤーの先端を電極トーチ間との放電により溶融し、ボールを形成する。その後、第１ボンディング点である集積回路素子上の電極に、超音波を印加しつつ前記ボールを押圧して接合を形成する（第１ボンド）。さらにワイヤーを引き出しながら、ボンディングツールを第２ボンディング点である回路配線基板の電極に移動して、同様に接続する（第２ボンド）。第２ボンドではボールの形成は行わない。接続後、ボンディングツールを上昇させ、ワイヤーをクランプで引っぱることにより切断する。
【０００４】
このようなボンディングワイヤーの素材としては、一般に金が使用されているが、高価であるため安価な他の金属からなるボンディングワイヤーの開発が望まれている。その要求に応えるものとして、低コストである銅を素材としたボンディングワイヤーが開発されている。
【０００５】
しかし、銅のボンディングワイヤーは表面の酸化が起こりやすいために長時間保存することが難しいことや、ボンディング時の基板からの熱伝導で酸化が進行し、接合性が悪くなるという課題を有する。さらに、銅を用いたボンディングワイヤーは、金に比べて硬いため、第１ボンディング時、集積回路素子へのダメージが大きいという課題もある。
【０００６】
銅ボンディングワイヤーの表面酸化防止に対しては、銅ワイヤーの上に金等の貴金属または耐食性金属を被覆したボンディングワイヤーが提案されている（特開昭６２−９７３６０号公報）。この金メッキ銅ボンディングワイヤーは、金ボンディングワイヤーより遥かに安価であると同時に表面酸化が起こらず良好な接合性を得ることができる。
【０００７】
【発明が解決しようとする課題】
しかし、半導体デバイスの更なる高集積化、小型化、すなわち隣接ワイヤー間隔の狭小化が押し進められる結果、金メッキ銅ボンディングワイヤーに新たな課題が生じている。隣接ワイヤー間隔の狭小化には径の小さいボールの形成が不可欠であるが、金メッキ銅ボンディングワイヤーで小径ボールを形成しようとすると真球とならず槍状となり、且つ形状の再現性も不安定となり接合信頼性が低下するという課題である。
【０００８】
さらに、第１ボンディング時の集積回路素子のダメージ抑制という課題の解消も望まれている。
【０００９】
従って、本発明の主目的は、ボール形成性に優れ、ボンディング時の集積回路素子のダメージを抑制できるボンディングワイヤーを提供することにある。
【００１０】
【課題を解決するための手段】
本発明は、ボンディングワイヤーの芯材の硬度と被覆層の特性を限定することで上記の目的を達成する。
【００１１】
すなわち、本発明ボンディングワイヤーは、芯材と、芯材上に形成された被覆層とを有するボンディングワイヤーであって、前記芯材はマイクロビッカース硬度が８０Ｈｖ以下である金以外の材料で構成され、前記被覆層は芯材よりも融点が３００℃以上高く銅よりも耐酸化性に優れた金属で構成されることを特徴とする。
【００１２】
ボンディングワイヤーの芯材と被覆層の材質がボール形成時の形状安定性に与える影響を鋭意研究した結果、芯材に比べ被覆材の融点が３００℃以上高温であれば金メッキ銅ワイヤーのように小径ボールを形成時にボールが槍状になるという不具合がなく良好形状のボールが得られ易いとの知見を得た。被覆層金属の融点が芯材金属よりも高い場合、被覆層金属の芯材金属への拡散・溶解が抑えられるためボールの真球性が保持されると考えられる。特に、小径のボール形成も容易に実現できる。小径のボールとは、ワイヤー直径の３倍以下のボールとする。
【００１３】
また、ボンディング時の集積回路素子へのダメージを調査した結果、芯材の硬度が８０Ｈｖ以下であれば、このダメージを小さくできるとの知見を得た。特に、芯材の硬度を７０Ｈｖ以下にすると、より一層集積回路素子のダメージを小さくすることができる。
【００１４】
ここで言うマイクロビッカース硬度の測定は次のように行う。ワイヤー先端を溶融して、ワイヤー径に対して２．５倍の径のボール１０を作製し、それを図１（Ａ）に示すように、銀メッキリードフレーム２０上にてサンプリングする。このボール１０を直径１ｍｍのステンレス円柱の平坦部にてリードフレーム２０に押しつけることにより、図１（Ｂ）に示すように、厚みが１／３になるまで押し潰す。この潰れたボール１１の中心の硬度を室温においてアカシ株式会社製の微小硬度測定器ＭＶＫ−Ｇ３を用いて荷重０．５ｇ、保持時間１０秒にて測定する。
【００１５】
芯材に用いる材料としては、金以外の金属を用いる。導電性の観点から銀または銅を主体とする材料が好適である。Ａｇの融点は９６２℃、Ｃｕの融点は１０８４℃である。通常、用いられる芯材材料は、銀と不純物または銅と不純物とからなる。銀の場合、純度は９９．９％以上が好ましい。銅の場合、純度は９９．９９９％以上が好ましい。純度を上げることで、比較的容易に低硬度の材料を得ることができる。芯材に含有する不純物としてはベリリウム、スズ、亜鉛、ジルコニウム、銀、クロム、鉄、酸素、硫黄、水素等が挙げられる。
【００１６】
被覆層に用いる金属としては、パラジウム、白金、ニッケルの少なくとも一種が好適である。Ｐｄの融点は１５５４℃、Ｐｔの融点は１７７２℃、Ｎｉの融点は１４５５℃である。被覆層材は、上記の元素が主体であれば、別の元素を含む合金であっても構わない。特に、パラジウムはニッケルよりも酸化防止能が優れ、白金よりも加工性がよいので最も好適である。被覆層厚はワイヤー径にもよるが芯材径の０．１〜０．０００１倍程度が好適である。
【００１７】
被覆層の形成方法としては電気メッキ法が最適である。太い銅線に厚メッキを施したものを伸線して狙いのワイヤー径、メッキ厚を出すと経済的で好ましい。特に、電気メッキと伸線の組合せは、厚みの均一性および表面の平滑性の点でもすぐれ、ボンディングツールのワイヤー通過穴内面との摩擦が小さくワイヤーのフィード性が良好である。さらには、芯材と被覆層との密着力が高いために、剥がれた被覆層の欠片がボンディングツール内で詰まる問題も解消できる。
【００１８】
本発明ワイヤーの直径は特に限定されない。特に小ボール径を目的とする場合、ワイヤー径は１５‐４０μｍが好適である。
【００１９】
【発明の実施の形態】
以下、本発明の実施の形態を説明する。
［実施例１］
純度９９．９５％、直径２００μｍのＡｇボンディングワイヤーに電気メッキして、厚さ０．８μｍのＰｄメッキ被覆層を形成した。このメッキワイヤーを伸線して、中心のＡｇ部（芯材）径：２５μｍ、Ｐｄメッキ厚：０．１μｍ、芯材のマイクロビッカース硬度：６８のＰｄメッキＡｇボンディングワイヤーを作製した。伸線速度は直径１００μｍまでは毎分１００ｍ、それ以下は毎分３０ｍで行った。ダイスは一回の通過において、面積比が９７％となるものを使用した。硬度は図１に示した方法により測定を行った（後述する他の実施例・比較例も同様）。最終工程として、長さ５０ｃｍ、３７０℃の炉内を毎分３０ｍで通してＰｄメッキＡｇボンディングワイヤーにアニールを施した。
【００２０】
［実施例２］
純度９９．９９９５％、２００μｍのＣｕボンディングワイヤーに電気メッキして、厚さ０．８μｍのＰｄメッキ被覆層を形成した。このメッキワイヤーを伸線して、中心のＣｕ部（芯材）径：２５μｍ、Ｐｄメッキ厚：０．１μｍ、芯材のマイクロビッカース硬度：７７のＰｄメッキＣｕボンディングワイヤーを作製した。伸線速度は直径１００μｍまでは毎分１００ｍ、それ以下は毎分３０ｍで行った。ダイスは一回の通過において、面積比が９７％となるものを使用した。最終工程として、長さ５０ｃｍ、４００℃の炉内を毎分３０ｍで通してＰｄメッキＣｕボンディングワイヤーにアニールを施した。
【００２１】
［実施例３］
純度９９．９９９５％、直径２００μｍのＣｕボンディングワイヤーに電気メッキして、厚さ０．８μｍのＮｉメッキ被覆層を形成した。このメッキワイヤーを伸線して、中心のＣｕ部（芯材）径：２５μｍ、Ｎｉメッキ厚：０．１μｍ、芯材のマイクロビッカース硬度：７９のＮｉメッキＣｕボンディングワイヤーを作製した。伸線速度は直径１００μｍまでは毎分１００ｍ、それ以下は毎分３０ｍで行った。ダイスは一回の通過において、面積比が９７％となるものを使用した。最終工程として、長さ５０ｃｍ、４００℃の炉内を毎分３０ｍで通してＮｉメッキＣｕボンディングワイヤーにアニールを施した。
【００２２】
［比較例１］
純度９９．９５％、直径２００μｍのＡｇボンディングワイヤーに電気メッキして、厚さ０．８μｍのＡｕメッキ被覆層を形成した。このメッキワイヤーを伸線して、中心のＡｇ部（芯材）径：２５μｍ、Ａｕメッキ厚：０．１μｍ、芯材のマイクロビッカース硬度：６８のＡｕメッキＡｇボンディングワイヤーを作製した。伸線速度は直径１００μｍまでは毎分１００ｍ、それ以下は毎分３０ｍで行った。ダイスは一回の通過において、面積比が９７％となるものを使用した。最終工程として、長さ５０ｃｍ、３７０℃の炉内を毎分３０ｍで通してＡｕメッキＡｇボンディングワイヤーにアニールを施した。
【００２３】
［比較例２］
純度９９．９９９５％、直径２００μｍのＣｕボンディングワイヤーに電気メッキして、厚さ０．８μｍのＰｄメッキ被覆層を形成した。このメッキワイヤーを伸線して、中心のＣｕ部（芯材）径：２５μｍ、Ｐｄメッキ厚：０．１μｍ、芯材のマイクロビッカース硬度：９１のＰｄメッキＣｕボンディングワイヤーを作製した。伸線速度は直径１００μｍまでは毎分１００ｍ、それ以下は毎分３０ｍで行った。ダイスは一回の通過において、面積比が９０％となるものを使用した。最終工程として、長さ５０ｃｍ、３４０℃の炉内を毎分３０ｍで通してＰｄメッキＣｕボンディングワイヤーにアニールを施した。
【００２４】
［比較例３］
純度９９．９９５％、直径２００μｍのＣｕボンディングワイヤーに電気メッキして、厚さ０．８μｍのＡｕメッキ被覆層を形成した。このメッキワイヤーを伸線して、中心のＣｕ部（芯材）径：２５μｍ、Ａｕメッキ厚：０．１μｍ、芯材のマイクロビッカース硬度：８８のＡｕメッキＣｕボンディングワイヤーを作製した。伸線速度は直径１００μｍまでは毎分１００ｍ、それ以下は毎分３０ｍで行った。ダイスは一回の通過において、面積比が９７％となるものを使用した。最終工程として、長さ５０ｃｍ、３４０℃の炉内を毎分３０ｍで通してＡｕメッキＣｕボンディングワイヤーにアニールを施した。
【００２５】
［比較例４］
住友金属鉱山株式会社製金ワイヤー（製品名ＮＬ５）を用いる。このワイヤーには被覆層は施さない。
【００２６】
以上の実施例および比較例について、以下の調査を行った。
＜ボール形成能調査＞
そのワイヤーを用いて、ボンダー（株式会社カイジョー製　ＦＢ１３７（型番））で所望径のボールを５０個形成し、その際の形状不良率を調査した。ボールが真円状の場合を「良」とし、ゴルフクラブ状の場合および槍状の場合を「不良」とした。ボール形成の条件としてはワイヤー先端とスパークロッド間距離を４００μｍとし、窒素を１リットル／分の流量でワイヤー先端部に吹き付け、その周辺の酸素濃度を低下させた状態で行った。
【００２７】
＜クラック率調査＞
Ｓｉチップ上にＡｌ被膜を形成したパッド上に、底面径１００μｍのボンディングツールにて径５５μｍのボールを荷重：６０ｇ、超音波パワー：７０で１００個ボンディングを行った。その後、チップ上のＡｌを除去してＳｉチップ上の割れ（クラック）の有無の確率を調査した。
【００２８】
調査結果を表１に示す。表１から明らかなように、芯材と被覆層の材料の融点に３００℃以上の差があり、芯材のマイクロビッカース硬度が８０以下であれば、ボール形成能に優れると共にチップの割れ率も非常に低いことがわかる。
【００２９】
【表１】

Figure 2004014884
【００３０】
【発明の効果】
以上説明したように、本発明によれば、芯材をマイクロビッカース硬度が８０Ｈｖ以下である金以外の材料で構成し、被覆層を芯材よりも融点が３００℃以上高く銅よりも耐酸化性に優れた金属で構成することで、真球性に優れたボール形成が可能になり、集積回路素子のダメージを抑制することができる。従って、信頼性の高いボンディングを行うことができる。
【図面の簡単な説明】
【図１】マイクロビッカース硬度の測定方法を示し、（Ａ）はボールをサンプリングする際の説明図で、（Ｂ）はボールを押し潰した状態の説明図である。
【符号の説明】
１０　ボール
１１　押し潰したボール
２０　リードフレーム[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a bonding wire suitable for connecting an electrode on an integrated circuit element (IC, LSI, transistor, etc.) and a conductor wiring of a circuit wiring board (lead frame, ceramic board, printed board, etc.). is there.
[0002]
[Prior art]
As a connection method between the integrated circuit element and the circuit wiring board, a ball bonding method, a wedge bonding method, a solder connection method, a resistance welding method, or the like is performed. Among them, a ball bonding method using a gold fine wire is common.
[0003]
Usually, the ball bonding method is performed by the following process. The tip of the wire guided by a movable capillary (hereinafter referred to as “bonding tool”) is melted by electric discharge between the electrode torches to form a ball. Thereafter, the ball is pressed against the electrode on the integrated circuit element, which is the first bonding point, while applying an ultrasonic wave to form a bond (first bond). Further, while pulling out the wire, the bonding tool is moved to the electrode of the circuit wiring board as the second bonding point, and similarly connected (second bond). The ball is not formed in the second bond. After connecting, the bonding tool is raised and cut by pulling the wire with a clamp.
[0004]
As a material for such a bonding wire, gold is generally used. However, since it is expensive, it is desired to develop a bonding wire made of another inexpensive metal. In response to this demand, low-cost copper bonding wires have been developed.
[0005]
However, the copper bonding wire has problems that it is difficult to store for a long time because the surface of the copper wire easily oxidizes, and that the oxidation progresses due to heat conduction from the substrate during bonding, resulting in poor bonding. Furthermore, since the bonding wire using copper is harder than gold, there is a problem that damage to the integrated circuit element is large at the time of the first bonding.
[0006]
For preventing the surface oxidation of copper bonding wires, a bonding wire in which a noble metal such as gold or a corrosion-resistant metal is coated on a copper wire has been proposed (Japanese Patent Laid-Open No. 62-97360). This gold-plated copper bonding wire is much cheaper than the gold bonding wire, and at the same time, surface oxidation does not occur and good bondability can be obtained.
[0007]
[Problems to be solved by the invention]
However, as semiconductor devices are further highly integrated and miniaturized, that is, the distance between adjacent wires is reduced, new problems arise in gold-plated copper bonding wires. The formation of a ball with a small diameter is indispensable for narrowing the distance between adjacent wires, but when a small-diameter ball is formed with a gold-plated copper bonding wire, it becomes a sphere-like shape and the shape reproducibility becomes unstable. This is a problem that the bonding reliability is lowered.
[0008]
Furthermore, it is desired to solve the problem of suppressing damage to the integrated circuit element during the first bonding.
[0009]
Accordingly, a main object of the present invention is to provide a bonding wire that is excellent in ball formability and can suppress damage to an integrated circuit element during bonding.
[0010]
[Means for Solving the Problems]
The present invention achieves the above object by limiting the hardness of the core material of the bonding wire and the properties of the coating layer.
[0011]
That is, the bonding wire of the present invention is a bonding wire having a core material and a coating layer formed on the core material, and the core material is made of a material other than gold having a micro Vickers hardness of 80 Hv or less, The coating layer is made of a metal having a melting point of 300 ° C. or more higher than that of the core material and excellent in oxidation resistance than copper.
[0012]
As a result of diligent research on the effects of bonding wire core material and coating layer material on shape stability during ball formation, the diameter of the coating material is smaller than that of gold-plated copper wire if the melting point of the coating material is higher than 300 ° C. It was found that when forming the ball, there is no problem that the ball becomes bowl-shaped and it is easy to obtain a ball having a good shape. When the melting point of the coating layer metal is higher than that of the core metal, it is considered that the sphericity of the ball is maintained because the diffusion and dissolution of the coating layer metal into the core metal is suppressed. In particular, it is possible to easily form a small-diameter ball. The small-diameter ball is a ball having a diameter not more than three times the wire diameter.
[0013]
Further, as a result of investigating damage to the integrated circuit element during bonding, it was found that if the hardness of the core material is 80 Hv or less, this damage can be reduced. In particular, when the hardness of the core material is 70 Hv or less, damage to the integrated circuit element can be further reduced.
[0014]
The measurement of micro Vickers hardness said here is performed as follows. The wire tip is melted to produce a ball 10 having a diameter 2.5 times the wire diameter, and is sampled on a silver-plated lead frame 20 as shown in FIG. By pressing the ball 10 against the lead frame 20 with a flat portion of a stainless steel cylinder having a diameter of 1 mm, the ball 10 is crushed until the thickness becomes 1/3 as shown in FIG. The hardness of the center of the crushed ball 11 is measured at room temperature using a micro hardness measuring device MVK-G3 manufactured by Akashi Co., Ltd. with a load of 0.5 g and a holding time of 10 seconds.
[0015]
As the material used for the core material, a metal other than gold is used. From the viewpoint of conductivity, a material mainly composed of silver or copper is preferable. The melting point of Ag is 962 ° C., and the melting point of Cu is 1084 ° C. Usually, the core material used is composed of silver and impurities or copper and impurities. In the case of silver, the purity is preferably 99.9% or more. In the case of copper, the purity is preferably 99.999% or more. By increasing the purity, a material with low hardness can be obtained relatively easily. Examples of impurities contained in the core material include beryllium, tin, zinc, zirconium, silver, chromium, iron, oxygen, sulfur, and hydrogen.
[0016]
As the metal used for the coating layer, at least one of palladium, platinum, and nickel is suitable. Pd has a melting point of 1554 ° C, Pt has a melting point of 1772 ° C, and Ni has a melting point of 1455 ° C. The covering layer material may be an alloy containing another element as long as the above-described element is a main component. In particular, palladium is most suitable because it has better antioxidant ability than nickel and better workability than platinum. The coating layer thickness is preferably about 0.1 to 0.0001 times the core material diameter although it depends on the wire diameter.
[0017]
The electroplating method is the most suitable method for forming the coating layer. It is economical and preferable to obtain a target wire diameter and plating thickness by drawing a thick copper wire with a thick plating. In particular, the combination of electroplating and wire drawing is excellent in terms of thickness uniformity and surface smoothness, and the friction with the inner surface of the wire passing hole of the bonding tool is small, and the feed property of the wire is good. Furthermore, since the adhesive force between the core material and the coating layer is high, it is possible to solve the problem that the stripped pieces of the coating layer are clogged in the bonding tool.
[0018]
The diameter of the wire of the present invention is not particularly limited. In particular, when aiming at a small ball diameter, the wire diameter is preferably 15-40 μm.
[0019]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below.
[Example 1]
An Ag bonding wire having a purity of 99.95% and a diameter of 200 μm was electroplated to form a Pd plating coating layer having a thickness of 0.8 μm. This plated wire was drawn to produce a Pd-plated Ag bonding wire having a central Ag part (core material) diameter: 25 μm, Pd plating thickness: 0.1 μm, and micro Vickers hardness of the core material: 68. The drawing speed was 100 m / min up to a diameter of 100 μm, and 30 m / min below that. A die having an area ratio of 97% in one pass was used. The hardness was measured by the method shown in FIG. 1 (the same applies to other examples and comparative examples described later). As a final step, the Pd-plated Ag bonding wire was annealed by passing through a furnace having a length of 50 cm and a temperature of 370 ° C. at a rate of 30 m / min.
[0020]
[Example 2]
A Cu bonding wire having a purity of 99.9995% and 200 μm was electroplated to form a Pd plating coating layer having a thickness of 0.8 μm. This plated wire was drawn to prepare a Pd plated Cu bonding wire having a central Cu portion (core material) diameter: 25 μm, Pd plating thickness: 0.1 μm, and micro Vickers hardness of the core material: 77. The drawing speed was 100 m / min up to a diameter of 100 μm, and 30 m / min below that. A die having an area ratio of 97% in one pass was used. As a final step, the Pd-plated Cu bonding wire was annealed by passing it through a 50 cm long, 400 ° C. furnace at 30 m / min.
[0021]
[Example 3]
A Cu bonding wire having a purity of 99.9995% and a diameter of 200 μm was electroplated to form a Ni plating coating layer having a thickness of 0.8 μm. This plated wire was drawn to produce a Ni-plated Cu bonding wire having a central Cu portion (core material) diameter: 25 μm, Ni plating thickness: 0.1 μm, and micro Vickers hardness of the core material: 79. The drawing speed was 100 m / min up to a diameter of 100 μm, and 30 m / min below that. A die having an area ratio of 97% in one pass was used. As a final step, the Ni-plated Cu bonding wire was annealed by passing through a 50 cm long, 400 ° C. furnace at 30 m / min.
[0022]
[Comparative Example 1]
An Au plating coating layer having a thickness of 0.8 μm was formed by electroplating an Ag bonding wire having a purity of 99.95% and a diameter of 200 μm. This plated wire was drawn to produce an Au-plated Ag bonding wire having a central Ag part (core material) diameter: 25 μm, Au plating thickness: 0.1 μm, and micro Vickers hardness of the core material: 68. The drawing speed was 100 m / min up to a diameter of 100 μm, and 30 m / min below that. A die having an area ratio of 97% in one pass was used. As a final process, the Au-plated Ag bonding wire was annealed by passing it through a furnace having a length of 50 cm and 370 ° C. at a rate of 30 m / min.
[0023]
[Comparative Example 2]
A Pd plating coating layer having a thickness of 0.8 μm was formed by electroplating on a Cu bonding wire having a purity of 99.9995% and a diameter of 200 μm. This plated wire was drawn to prepare a Pd plated Cu bonding wire having a central Cu portion (core material) diameter: 25 μm, Pd plating thickness: 0.1 μm, and micro Vickers hardness of the core material: 91. The drawing speed was 100 m / min up to a diameter of 100 μm, and 30 m / min below that. A die having an area ratio of 90% in one pass was used. As a final step, the Pd-plated Cu bonding wire was annealed by passing it through a 50 cm long, 340 ° C. furnace at 30 m / min.
[0024]
[Comparative Example 3]
A Cu bonding wire having a purity of 99.995% and a diameter of 200 μm was electroplated to form an Au plating coating layer having a thickness of 0.8 μm. This plated wire was drawn to produce an Au plated Cu bonding wire having a central Cu portion (core material) diameter: 25 μm, an Au plating thickness: 0.1 μm, and a micro Vickers hardness of the core material: 88. The drawing speed was 100 m / min up to a diameter of 100 μm, and 30 m / min below that. A die having an area ratio of 97% in one pass was used. As a final step, the Au-plated Cu bonding wire was annealed by passing it through a 50 cm long, 340 ° C. furnace at 30 m / min.
[0025]
[Comparative Example 4]
A gold wire (product name NL5) manufactured by Sumitomo Metal Mining Co., Ltd. is used. No coating layer is applied to this wire.
[0026]
The following investigation was conducted on the above examples and comparative examples.
<Ball forming ability survey>
Using the wire, 50 balls of a desired diameter were formed with a bonder (FB137 (model number) manufactured by Kaijo Corporation), and the shape defect rate at that time was investigated. The case where the ball was a perfect circle was judged as “good”, and the case of a golf club shape and a bowl shape were judged as “bad”. The conditions for ball formation were such that the distance between the wire tip and the spark rod was 400 μm, nitrogen was blown onto the wire tip at a flow rate of 1 liter / min, and the oxygen concentration around the wire was reduced.
[0027]
<Crack rate investigation>
On a pad on which an Al film was formed on a Si chip, 100 balls having a diameter of 55 μm were bonded with a bonding tool having a bottom diameter of 100 μm with a load of 60 g and an ultrasonic power of 70. Thereafter, Al on the chip was removed, and the probability of the presence or absence of cracks on the Si chip was investigated.
[0028]
The survey results are shown in Table 1. As is apparent from Table 1, if the melting point of the core material and the coating layer material is 300 ° C. or more and the core material has a micro Vickers hardness of 80 or less, the ball forming ability is excellent and the chip cracking rate is also high. It turns out that it is very low.
[0029]
[Table 1]
Figure 2004014884
[0030]
【The invention's effect】
As described above, according to the present invention, the core material is made of a material other than gold having a micro Vickers hardness of 80 Hv or less, and the coating layer has a melting point higher than that of the core material by 300 ° C. or higher and is more resistant to oxidation than copper. By using a metal that is superior to the above, it is possible to form a ball having excellent sphericity, and damage to the integrated circuit element can be suppressed. Therefore, highly reliable bonding can be performed.
[Brief description of the drawings]
1A and 1B show a method of measuring micro Vickers hardness, wherein FIG. 1A is an explanatory diagram when sampling a ball, and FIG. 1B is an explanatory diagram of a state in which the ball is crushed;
[Explanation of symbols]
10 Ball 11 Crushed ball 20 Lead frame

Claims (4)

芯材と、芯材上に形成された被覆層とを有するボンディングワイヤーであって、
前記芯材はマイクロビッカース硬度が８０Ｈｖ以下である金以外の材料で構成され、
前記被覆層は芯材よりも融点が３００℃以上高く銅よりも耐酸化性に優れた金属で構成されることを特徴とするボンディングワイヤー。A bonding wire having a core material and a coating layer formed on the core material,
The core material is composed of a material other than gold having a micro Vickers hardness of 80 Hv or less,
The said coating layer is comprised with the metal whose melting | fusing point is 300 degreeC or more higher than a core material, and was excellent in oxidation resistance rather than copper, The bonding wire characterized by the above-mentioned. 前記芯材が銀と不純物とから構成されることを特徴とする請求項１に記載のボンディングワイヤー。The bonding wire according to claim 1, wherein the core material is composed of silver and impurities. 前記芯材が銅と不純物とから構成されることを特徴とする請求項１に記載のボンディングワイヤー。The bonding wire according to claim 1, wherein the core material is composed of copper and impurities. 前記被覆層はパラジウム、白金およびニッケルの少なくとも一種から構成されることを特徴とする請求項１に記載のボンディングワイヤー。The bonding wire according to claim 1, wherein the coating layer is made of at least one of palladium, platinum, and nickel.
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WO2013129253A1 (en) 2012-02-27 2013-09-06 日鉄住金マイクロメタル株式会社 Power semiconductor device, method for manufacturing same, and bonding wire
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JP2017163169A (en) * 2014-04-21 2017-09-14 新日鉄住金マテリアルズ株式会社 Bonding wire for semiconductor device
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JP2019186246A (en) * 2018-04-02 2019-10-24 田中電子工業株式会社 Noble metal-coated silver wire for ball bonding and manufacturing method of the same, and semiconductor device using noble metal-coated silver wire for ball bonding and manufacturing method of the same
JP2019186248A (en) * 2018-04-02 2019-10-24 田中電子工業株式会社 Noble metal-coated silver wire for ball bonding and manufacturing method of the same, and semiconductor device using noble metal-coated silver wire for ball bonding and manufacturing method of the same
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US11251153B2 (en) 2018-04-02 2022-02-15 Tanaka Denshi Kogyo K.K. Noble metal-coated silver wire for ball bonding, and semiconductor device using noble metal-coated silver wire for ball bonding
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