JPS60160554U - Bonding thin wire for semiconductors - Google Patents

Bonding thin wire for semiconductors

Info

Publication number
JPS60160554U
JPS60160554U JP1984047473U JP4747384U JPS60160554U JP S60160554 U JPS60160554 U JP S60160554U JP 1984047473 U JP1984047473 U JP 1984047473U JP 4747384 U JP4747384 U JP 4747384U JP S60160554 U JPS60160554 U JP S60160554U
Authority
JP
Japan
Prior art keywords
semiconductors
thin wire
bonding thin
alloy
intermediate layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1984047473U
Other languages
Japanese (ja)
Other versions
JPH034030Y2 (en
Inventor
志賀　章二
Original Assignee
古河電気工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 古河電気工業株式会社 filed Critical 古河電気工業株式会社
Priority to JP1984047473U priority Critical patent/JPS60160554U/en
Publication of JPS60160554U publication Critical patent/JPS60160554U/en
Application granted granted Critical
Publication of JPH034030Y2 publication Critical patent/JPH034030Y2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/4557—Plural coating layers
    • H01L2224/45572—Two-layer stack coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図及び第２図は本考案半導体用ボンディング細線の
１例を示す断面図である。 １・・・心線、２・・・被覆層、３・・・中間層。 補正　昭５９．５．１１ 実用新案登録請求の範囲を次のように補正する。 Ｏ実用新案登録請求の範囲 （１）　　Ｃｕ又はＣｕ合金の心線の外周に直接又は中
間層を介してＰｄ又はＰｄ合金の被覆層を設けたことを
特徴とする半導体用ボンディング細線。 （２）中間層としてＮｉ、　ＣＯ又はこれらの合金から
なることを特徴とする実用新案登録請求の範囲第１項記
載の半導体用ポンディｙｙ細線。FIGS. 1 and 2 are cross-sectional views showing an example of the semiconductor bonding thin wire of the present invention. 1... Core wire, 2... Covering layer, 3... Intermediate layer. Amendment May 11, 1980 The scope of claims for utility model registration is amended as follows. O Utility Model Registration Claims (1) A thin bonding wire for semiconductors, characterized in that a coating layer of Pd or Pd alloy is provided on the outer periphery of a core wire of Cu or Cu alloy, either directly or via an intermediate layer. (2) A Pondy yy thin wire for a semiconductor according to claim 1, wherein the intermediate layer is made of Ni, CO or an alloy thereof.

Claims (2)

【実用新案登録請求の範囲】[Scope of utility model registration request] （１）　　Ｃｕ又はＣｕ合金の心線の外周に直接又は中
間層を介してＰｄ又はＰｄ合金の被覆層を設けたことを
特徴とする半導体用ボンディング細線。(1) A thin bonding wire for semiconductors, characterized in that a coating layer of Pd or Pd alloy is provided on the outer periphery of a core wire of Cu or Cu alloy, either directly or via an intermediate layer. （２）中間層としてＮｉ、　ＣＯ又はこれら合金からな
ることを特徴とする実用新案登録請求の範囲第１項記載
の半導体用ボンディング細線。(2) The thin bonding wire for a semiconductor according to claim 1, wherein the intermediate layer is made of Ni, CO or an alloy thereof.
JP1984047473U 1984-03-31 1984-03-31 Bonding thin wire for semiconductors Granted JPS60160554U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1984047473U JPS60160554U (en) 1984-03-31 1984-03-31 Bonding thin wire for semiconductors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1984047473U JPS60160554U (en) 1984-03-31 1984-03-31 Bonding thin wire for semiconductors

Publications (2)

Publication Number Publication Date
JPS60160554U true JPS60160554U (en) 1985-10-25
JPH034030Y2 JPH034030Y2 (en) 1991-02-01

Family

ID=30562833

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1984047473U Granted JPS60160554U (en) 1984-03-31 1984-03-31 Bonding thin wire for semiconductors

Country Status (1)

Country Link
JP (1) JPS60160554U (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003081661A1 (en) * 2002-03-26 2003-10-02 Sumitomo Electric Wintec, Incorporated Bonding wire and integrated circuit device using the same
WO2006073206A1 (en) * 2005-01-05 2006-07-13 Nippon Steel Materials Co., Ltd. Bonding wire for semiconductor device
JP2006190763A (en) * 2005-01-05 2006-07-20 Nippon Steel Corp Bonding wire for semiconductor device
WO2010109693A1 (en) * 2009-03-23 2010-09-30 田中電子工業株式会社 Coated copper wire for ball bonding
JP2010272884A (en) * 2010-08-03 2010-12-02 Nippon Steel Materials Co Ltd Bonding wire for semiconductor device
JP2013080960A (en) * 2000-09-18 2013-05-02 Nippon Steel Sumikin Materials Co Ltd Bonding wire for semiconductor and method of manufacturing the same
JP2017163169A (en) * 2014-04-21 2017-09-14 新日鉄住金マテリアルズ株式会社 Bonding wire for semiconductor device
US10195697B2 (en) 2015-09-02 2019-02-05 Tanaka Denshi Kogyo K.K. Palladium (Pd)-coated copper wire for ball bonding
US10236272B2 (en) 2015-05-26 2019-03-19 Nippon Micrometal Corporation Cu alloy core bonding wire with Pd coating for semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006216929A (en) * 2005-01-05 2006-08-17 Nippon Steel Corp Bonding wire for semiconductor device

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013080960A (en) * 2000-09-18 2013-05-02 Nippon Steel Sumikin Materials Co Ltd Bonding wire for semiconductor and method of manufacturing the same
CN100359657C (en) * 2002-03-26 2008-01-02 株式会社野毛电气工业 Bonding wire and an integrated circuit device using the same
WO2003081661A1 (en) * 2002-03-26 2003-10-02 Sumitomo Electric Wintec, Incorporated Bonding wire and integrated circuit device using the same
JP4672373B2 (en) * 2005-01-05 2011-04-20 新日鉄マテリアルズ株式会社 Bonding wires for semiconductor devices
WO2006073206A1 (en) * 2005-01-05 2006-07-13 Nippon Steel Materials Co., Ltd. Bonding wire for semiconductor device
JP2006190763A (en) * 2005-01-05 2006-07-20 Nippon Steel Corp Bonding wire for semiconductor device
KR101016158B1 (en) * 2005-01-05 2011-02-17 신닛테츠 마테리알즈 가부시키가이샤 Bonding wire for semiconductor device
WO2010109693A1 (en) * 2009-03-23 2010-09-30 田中電子工業株式会社 Coated copper wire for ball bonding
JP2010272884A (en) * 2010-08-03 2010-12-02 Nippon Steel Materials Co Ltd Bonding wire for semiconductor device
JP2017163169A (en) * 2014-04-21 2017-09-14 新日鉄住金マテリアルズ株式会社 Bonding wire for semiconductor device
JP2020031238A (en) * 2014-04-21 2020-02-27 日鉄ケミカル＆マテリアル株式会社 Bonding wire for semiconductor device
US10950570B2 (en) 2014-04-21 2021-03-16 Nippon Steel Chemical & Material Co., Ltd. Bonding wire for semiconductor device
US10236272B2 (en) 2015-05-26 2019-03-19 Nippon Micrometal Corporation Cu alloy core bonding wire with Pd coating for semiconductor device
US10497663B2 (en) 2015-05-26 2019-12-03 Nippon Micrometal Corporation Cu alloy core bonding wire with Pd coating for semiconductor device
US10672733B2 (en) 2015-05-26 2020-06-02 Nippon Micrometal Corporation Cu alloy core bonding wire with Pd coating for semiconductor device
US10195697B2 (en) 2015-09-02 2019-02-05 Tanaka Denshi Kogyo K.K. Palladium (Pd)-coated copper wire for ball bonding

Also Published As

Publication number Publication date
JPH034030Y2 (en) 1991-02-01

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