JPH034030Y2 - - Google Patents
Info
- Publication number
- JPH034030Y2 JPH034030Y2 JP1984047473U JP4747384U JPH034030Y2 JP H034030 Y2 JPH034030 Y2 JP H034030Y2 JP 1984047473 U JP1984047473 U JP 1984047473U JP 4747384 U JP4747384 U JP 4747384U JP H034030 Y2 JPH034030 Y2 JP H034030Y2
- Authority
- JP
- Japan
- Prior art keywords
- wire
- alloy
- bonding
- present
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010410 layer Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000011247 coating layer Substances 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 229910001252 Pd alloy Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 description 12
- 239000011162 core material Substances 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910017755 Cu-Sn Inorganic materials 0.000 description 1
- 229910002482 Cu–Ni Inorganic materials 0.000 description 1
- 229910017927 Cu—Sn Inorganic materials 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000007500 overflow downdraw method Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/4557—Plural coating layers
- H01L2224/45572—Two-layer stack coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
Description
本考案は半導体ボンデイング細線の改良に関す
るものである。
従来IC,LSI或はハイブリツドICなどの半導体
においてSiチツプなどの半導体素子上に形成され
た電極をリードフレームや基板リードの間を電気
接続する目的で15〜60μφ程度のAu細線やAl−Si
合金細線が使用されている。而して前者の細線は
生産性の高い熱融着法や超音波熱圧着法ボンデイ
ングが適応でき且つ耐食性を有するため広く利用
されているが、その欠点は著しく高価なことであ
る。又一方後者の細線はAu線に比して安価であ
るが大気雰囲気中において熱融着法を適用するこ
とができず生産性に劣ると共に腐食し易く半導体
使用時の断線等の故障をまねきやすい。特にエポ
キシ樹脂等の汎用樹脂モールド半導体においては
該樹脂の透湿性と塩素汚染によつてAl線の腐食
は大きな問題となつていた。
このAl合金線に代えてCu又はCu合金線を使用
する試みもあるが、細線の腐食問題においてAl
合金線より稍改良されるが実用的には大きなネツ
クとなるものであつた。更にこの合金線にAgを
被覆したものを利用する試みをあるが、樹脂モー
ルド半導体などにおいては激しいマイグレーシヨ
ンをおこして回路短絡の障害となるものであつ
た。
なお前記のCu又はCu合金線においてもマイグ
レーシヨンをおこすがAg線より低いものである。
本考案はかかる現状に鑑み鋭意研究を行つた結
果、経済性に優れ且つ高性能を有する実用的なボ
ンデイング細線を見出したものである。即ち本考
案はCu又はCu合金線からなる心線の外周に直接
又は中間層を介してPd又はPd合金を被覆したも
のである。
本考案の1例を図面により説明する第1図に示
す如くCu、Cu−Sn,Cu−In,Cu−Ni,Cu−
Fe,Cu−Zn等の芯材1の外周にPd,Pd−Ni,
Pd−CO等の被覆層2を設けたものである。
本考案において被覆層2の厚さについては特に
限定するものではないが0.01〜2μ特に望ましくは
0.02〜0.5μが経済性の点から好ましい。この厚さ
の被覆層を設けることにより耐食性並に強度を改
良することが出来る。即ち本考案はCu線又はCu
合金線の特性とする導電性及び強度をより有効に
活用せしめているものである。特に本考案は安価
な純Cu線を芯材として使用しても高価なCu合金
線に匹敵する性能を発揮しうる付加的効果もうる
ことができる。即ち通常純Cu線はCu合金線より
も導電性に優れているが、強度に劣るものである
が、本考案においては純Cu線を芯材とするも高
い導電性と強度とを有するものをうることがで
き、特にボンデイング部においてCuとPdとが合
金となり強化されるので理想的なものとなる。
又第2図に示すものは中間層3を設けてPd又
はPd合金の被覆層を設けたものである。即ち中
間層としてはNi,Coの如く安価な金属でしかも
耐食性や拡散劣化を改善しうる金属を使用するた
め、Pd又はPd合金の被覆層2をより薄層にする
ことができ上記の如く0.02〜0.5μ程度にて十分な
効果を発揮することができる。
なお中間層の厚さについても特に限定するもの
ではないが通常0.02〜0.1μ程度を被覆するもので
ある。
而して本考案における中間層及び被覆層を設け
るための操作としては真空メツキ法、機械的圧着
法などによるもえられるが、好ましくは電気メツ
キ法が最も有利である。
次に本考案の実施例について具体的に説明す
る。
実施例
無酸素銅線(20μφ)に第1表に示す金属又は
合金を電気メツキにより被覆して本発明ボンデイ
ング細線及び比較例ボンデイング細線をえた。
斯くして得たボンデイング細線を16ピンのリー
ドフレーム(Cu−0.15 Sn−0.01P合金製)にSi
チツプをダイボンドした後雰囲気熱融着法により
ワイヤーボンデイングを行つた。ボンデイング条
件としては10%H2−N2の雰囲気、190℃に昇温
し、第1ボンデイング圧50gr第2ボンデイング圧
80grにて行つた。
斯くして得たボンデイングをプルラスターにて
強度を測定し、次いでエポキシ樹脂にてモールド
したICを130℃、飽和圧のプレツシロークツカー
にて12V印加で2000hr保持して断線確率並に短絡
確率を測定した。その結果は第1表に示す通りで
ある。
The present invention relates to improvements in semiconductor bonding thin wires. In conventional semiconductors such as ICs, LSIs, and hybrid ICs, thin Au wires or Al-Si wires of about 15 to 60μφ are used to electrically connect electrodes formed on semiconductor elements such as Si chips to lead frames and substrate leads.
Fine alloy wire is used. The former thin wire is widely used because it can be applied to highly productive heat fusion bonding methods and ultrasonic thermocompression bonding methods and has corrosion resistance, but its drawback is that it is extremely expensive. On the other hand, the latter thin wire is cheaper than Au wire, but it cannot be heat fused in the atmosphere, so it has poor productivity and is easily corroded, leading to failures such as disconnection when using semiconductors. . Particularly in semiconductors molded with general-purpose resins such as epoxy resins, corrosion of Al wires has been a major problem due to the moisture permeability of the resins and chlorine contamination. Some attempts have been made to use Cu or Cu alloy wire instead of this Al alloy wire, but Al
Although it was slightly improved over alloy wire, it was a big problem in practical use. Furthermore, attempts have been made to use this alloy wire coated with Ag, but this has caused severe migration in resin-molded semiconductors, causing short circuits. Note that migration also occurs in the above-mentioned Cu or Cu alloy wire, but it is lower than that in the Ag wire. The present invention was developed as a result of extensive research in view of the current situation, and the discovery of a practical thin bonding wire that is economical and has high performance. That is, in the present invention, the outer periphery of a core wire made of Cu or Cu alloy wire is coated with Pd or Pd alloy either directly or through an intermediate layer. As shown in Fig. 1, which explains one example of the present invention with drawings, Cu, Cu-Sn, Cu-In, Cu-Ni, Cu-
Pd, Pd-Ni,
A coating layer 2 of Pd-CO or the like is provided. In the present invention, the thickness of the coating layer 2 is not particularly limited, but is preferably 0.01 to 2 μm.
0.02 to 0.5μ is preferable from the economic point of view. By providing a coating layer of this thickness, corrosion resistance and strength can be improved. That is, the present invention uses Cu wire or Cu wire.
This makes more effective use of the conductivity and strength characteristics of alloy wire. In particular, the present invention can have the additional effect of exhibiting performance comparable to expensive Cu alloy wire even when using an inexpensive pure Cu wire as the core material. In other words, pure Cu wire usually has better conductivity than Cu alloy wire, but is inferior in strength. However, in the present invention, we have developed a wire that uses pure Cu wire as a core material but has high conductivity and strength. It is ideal because Cu and Pd form an alloy and strengthen, especially in the bonding area. Moreover, the one shown in FIG. 2 is one in which an intermediate layer 3 is provided and a covering layer of Pd or a Pd alloy is provided. That is, since the intermediate layer uses a metal such as Ni or Co, which is inexpensive and can improve corrosion resistance and diffusion deterioration, the coating layer 2 of Pd or Pd alloy can be made thinner, such as 0.02 as described above. A sufficient effect can be achieved with a thickness of about 0.5μ. The thickness of the intermediate layer is not particularly limited either, but it is usually about 0.02 to 0.1 .mu.m. In the present invention, the intermediate layer and the covering layer may be formed by vacuum plating, mechanical pressure bonding, etc., but electroplating is most advantageous. Next, embodiments of the present invention will be described in detail. EXAMPLE Oxygen-free copper wire (20 μΦ) was coated with the metals or alloys shown in Table 1 by electroplating to obtain thin bonding wires of the present invention and comparative thin wires. The bonded thin wire obtained in this way was attached to a 16-pin lead frame (made of Cu-0.15 Sn-0.01P alloy).
After the chips were die-bonded, wire bonding was performed using an atmospheric heat fusion method. The bonding conditions were 10% H2 - N2 atmosphere, temperature raised to 190℃, first bonding pressure 50g, second bonding pressure.
I went with 80gr. The strength of the bonding obtained in this way was measured using a pull-raster, and then the IC molded with epoxy resin was held at 130°C with a pressurizer at saturation pressure for 2000 hours with 12V applied to determine the probability of disconnection and short circuit. The probability was measured. The results are shown in Table 1.
【表】
上表から明らかの如く本考案半導体用ボンデイ
ング細線は従来のAu線(比較例3)と同様に断
線及び短絡することなく、且つ強度に優れてい
る。又Cu線(比較例1)は短絡はしないがICを
破壊して電子顕微鏡で観察したところCuのマイ
グレーシヨンが見られた。これに対し本考案細線
は全くその痕跡も見られなかつた。
以上詳述した如く本考案によれば高価なAu線
に代えて安価にして高性能を有するボンデイング
細線をうる等顕著な効果を有する。[Table] As is clear from the above table, the thin bonding wire for semiconductors of the present invention does not break or short-circuit and has excellent strength like the conventional Au wire (Comparative Example 3). Further, although the Cu wire (Comparative Example 1) did not cause short circuit, when the IC was destroyed and observed under an electron microscope, migration of Cu was observed. In contrast, no trace of this was observed in the thin wire of the present invention. As described in detail above, the present invention has remarkable effects such as providing a bonding thin wire with low cost and high performance in place of the expensive Au wire.
第1図及び第2図は本考案半導体用ボンデイン
グ細線の1例を示す断面図である。
1……心線、2……被覆層、3……中間層。
FIGS. 1 and 2 are cross-sectional views showing one example of the semiconductor bonding thin wire of the present invention. 1... Core wire, 2... Covering layer, 3... Intermediate layer.
Claims (1)
層を介してPd又はPd合金の被覆層を設けたこ
とを特徴とする半導体用ボンデイング細線。 (2) 中間層としてNi,CO又はこれらの合金から
ならることを特徴とする実用新案登録請求の範
囲第1項記載の半導体用ボンデイング細線。[Claims for Utility Model Registration] (1) A thin bonding wire for semiconductors, characterized in that a coating layer of Pd or Pd alloy is provided on the outer periphery of a core wire of Cu or Cu alloy, either directly or via an intermediate layer. (2) The thin bonding wire for semiconductors as set forth in claim 1 of the utility model registration claim, characterized in that the intermediate layer is made of Ni, CO, or an alloy thereof.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1984047473U JPS60160554U (en) | 1984-03-31 | 1984-03-31 | Bonding thin wire for semiconductors |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1984047473U JPS60160554U (en) | 1984-03-31 | 1984-03-31 | Bonding thin wire for semiconductors |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60160554U JPS60160554U (en) | 1985-10-25 |
JPH034030Y2 true JPH034030Y2 (en) | 1991-02-01 |
Family
ID=30562833
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1984047473U Granted JPS60160554U (en) | 1984-03-31 | 1984-03-31 | Bonding thin wire for semiconductors |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60160554U (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2002023618A1 (en) * | 2000-09-18 | 2004-01-22 | 新日本製鐵株式会社 | Semiconductor bonding wire and method of manufacturing the same |
JP2006216929A (en) * | 2005-01-05 | 2006-08-17 | Nippon Steel Corp | Bonding wire for semiconductor device |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200414453A (en) * | 2002-03-26 | 2004-08-01 | Sumitomo Electric Wintec Inc | Bonding wire and IC device using the bonding wire |
JP4672373B2 (en) * | 2005-01-05 | 2011-04-20 | 新日鉄マテリアルズ株式会社 | Bonding wires for semiconductor devices |
KR101019811B1 (en) * | 2005-01-05 | 2011-03-04 | 신닛테츠 마테리알즈 가부시키가이샤 | Bonding wire for semiconductor device |
JP4349641B1 (en) * | 2009-03-23 | 2009-10-21 | 田中電子工業株式会社 | Coated copper wire for ball bonding |
JP5393614B2 (en) * | 2010-08-03 | 2014-01-22 | 新日鉄住金マテリアルズ株式会社 | Bonding wires for semiconductor devices |
SG11201608819VA (en) * | 2014-04-21 | 2016-12-29 | Nippon Steel & Sumikin Mat Co | Bonding wire for semiconductor device |
WO2016189752A1 (en) | 2015-05-26 | 2016-12-01 | 日鉄住金マイクロメタル株式会社 | Bonding wire for semiconductor device |
JP6002300B1 (en) | 2015-09-02 | 2016-10-05 | 田中電子工業株式会社 | Palladium (Pd) coated copper wire for ball bonding |
-
1984
- 1984-03-31 JP JP1984047473U patent/JPS60160554U/en active Granted
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2002023618A1 (en) * | 2000-09-18 | 2004-01-22 | 新日本製鐵株式会社 | Semiconductor bonding wire and method of manufacturing the same |
JP2010166079A (en) * | 2000-09-18 | 2010-07-29 | Nippon Steel Materials Co Ltd | Bonding wire for semiconductor and method of manufacturing the same |
JP2010166080A (en) * | 2000-09-18 | 2010-07-29 | Nippon Steel Materials Co Ltd | Bonding wire for semiconductor and method of manufacturing the same |
JP2011124611A (en) * | 2000-09-18 | 2011-06-23 | Nippon Steel Materials Co Ltd | Bonding wire for semiconductor |
JP4868694B2 (en) * | 2000-09-18 | 2012-02-01 | 新日鉄マテリアルズ株式会社 | Bonding wire for semiconductor |
JP2006216929A (en) * | 2005-01-05 | 2006-08-17 | Nippon Steel Corp | Bonding wire for semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS60160554U (en) | 1985-10-25 |
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