JPH034030Y2 - - Google Patents

Info

Publication number
JPH034030Y2
JPH034030Y2 JP1984047473U JP4747384U JPH034030Y2 JP H034030 Y2 JPH034030 Y2 JP H034030Y2 JP 1984047473 U JP1984047473 U JP 1984047473U JP 4747384 U JP4747384 U JP 4747384U JP H034030 Y2 JPH034030 Y2 JP H034030Y2
Authority
JP
Japan
Prior art keywords
wire
alloy
bonding
present
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1984047473U
Other languages
Japanese (ja)
Other versions
JPS60160554U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1984047473U priority Critical patent/JPS60160554U/en
Publication of JPS60160554U publication Critical patent/JPS60160554U/en
Application granted granted Critical
Publication of JPH034030Y2 publication Critical patent/JPH034030Y2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147Copper (Cu) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45565Single coating layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/4557Plural coating layers
    • H01L2224/45572Two-layer stack coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Description

【考案の詳細な説明】[Detailed explanation of the idea]

本考案は半導体ボンデイング細線の改良に関す
るものである。 従来IC,LSI或はハイブリツドICなどの半導体
においてSiチツプなどの半導体素子上に形成され
た電極をリードフレームや基板リードの間を電気
接続する目的で15〜60μφ程度のAu細線やAl−Si
合金細線が使用されている。而して前者の細線は
生産性の高い熱融着法や超音波熱圧着法ボンデイ
ングが適応でき且つ耐食性を有するため広く利用
されているが、その欠点は著しく高価なことであ
る。又一方後者の細線はAu線に比して安価であ
るが大気雰囲気中において熱融着法を適用するこ
とができず生産性に劣ると共に腐食し易く半導体
使用時の断線等の故障をまねきやすい。特にエポ
キシ樹脂等の汎用樹脂モールド半導体においては
該樹脂の透湿性と塩素汚染によつてAl線の腐食
は大きな問題となつていた。 このAl合金線に代えてCu又はCu合金線を使用
する試みもあるが、細線の腐食問題においてAl
合金線より稍改良されるが実用的には大きなネツ
クとなるものであつた。更にこの合金線にAgを
被覆したものを利用する試みをあるが、樹脂モー
ルド半導体などにおいては激しいマイグレーシヨ
ンをおこして回路短絡の障害となるものであつ
た。 なお前記のCu又はCu合金線においてもマイグ
レーシヨンをおこすがAg線より低いものである。 本考案はかかる現状に鑑み鋭意研究を行つた結
果、経済性に優れ且つ高性能を有する実用的なボ
ンデイング細線を見出したものである。即ち本考
案はCu又はCu合金線からなる心線の外周に直接
又は中間層を介してPd又はPd合金を被覆したも
のである。 本考案の1例を図面により説明する第1図に示
す如くCu、Cu−Sn,Cu−In,Cu−Ni,Cu−
Fe,Cu−Zn等の芯材1の外周にPd,Pd−Ni,
Pd−CO等の被覆層2を設けたものである。 本考案において被覆層2の厚さについては特に
限定するものではないが0.01〜2μ特に望ましくは
0.02〜0.5μが経済性の点から好ましい。この厚さ
の被覆層を設けることにより耐食性並に強度を改
良することが出来る。即ち本考案はCu線又はCu
合金線の特性とする導電性及び強度をより有効に
活用せしめているものである。特に本考案は安価
な純Cu線を芯材として使用しても高価なCu合金
線に匹敵する性能を発揮しうる付加的効果もうる
ことができる。即ち通常純Cu線はCu合金線より
も導電性に優れているが、強度に劣るものである
が、本考案においては純Cu線を芯材とするも高
い導電性と強度とを有するものをうることがで
き、特にボンデイング部においてCuとPdとが合
金となり強化されるので理想的なものとなる。 又第2図に示すものは中間層3を設けてPd又
はPd合金の被覆層を設けたものである。即ち中
間層としてはNi,Coの如く安価な金属でしかも
耐食性や拡散劣化を改善しうる金属を使用するた
め、Pd又はPd合金の被覆層2をより薄層にする
ことができ上記の如く0.02〜0.5μ程度にて十分な
効果を発揮することができる。 なお中間層の厚さについても特に限定するもの
ではないが通常0.02〜0.1μ程度を被覆するもので
ある。 而して本考案における中間層及び被覆層を設け
るための操作としては真空メツキ法、機械的圧着
法などによるもえられるが、好ましくは電気メツ
キ法が最も有利である。 次に本考案の実施例について具体的に説明す
る。 実施例 無酸素銅線(20μφ)に第1表に示す金属又は
合金を電気メツキにより被覆して本発明ボンデイ
ング細線及び比較例ボンデイング細線をえた。 斯くして得たボンデイング細線を16ピンのリー
ドフレーム(Cu−0.15 Sn−0.01P合金製)にSi
チツプをダイボンドした後雰囲気熱融着法により
ワイヤーボンデイングを行つた。ボンデイング条
件としては10%H2−N2の雰囲気、190℃に昇温
し、第1ボンデイング圧50gr第2ボンデイング圧
80grにて行つた。 斯くして得たボンデイングをプルラスターにて
強度を測定し、次いでエポキシ樹脂にてモールド
したICを130℃、飽和圧のプレツシロークツカー
にて12V印加で2000hr保持して断線確率並に短絡
確率を測定した。その結果は第1表に示す通りで
ある。
The present invention relates to improvements in semiconductor bonding thin wires. In conventional semiconductors such as ICs, LSIs, and hybrid ICs, thin Au wires or Al-Si wires of about 15 to 60μφ are used to electrically connect electrodes formed on semiconductor elements such as Si chips to lead frames and substrate leads.
Fine alloy wire is used. The former thin wire is widely used because it can be applied to highly productive heat fusion bonding methods and ultrasonic thermocompression bonding methods and has corrosion resistance, but its drawback is that it is extremely expensive. On the other hand, the latter thin wire is cheaper than Au wire, but it cannot be heat fused in the atmosphere, so it has poor productivity and is easily corroded, leading to failures such as disconnection when using semiconductors. . Particularly in semiconductors molded with general-purpose resins such as epoxy resins, corrosion of Al wires has been a major problem due to the moisture permeability of the resins and chlorine contamination. Some attempts have been made to use Cu or Cu alloy wire instead of this Al alloy wire, but Al
Although it was slightly improved over alloy wire, it was a big problem in practical use. Furthermore, attempts have been made to use this alloy wire coated with Ag, but this has caused severe migration in resin-molded semiconductors, causing short circuits. Note that migration also occurs in the above-mentioned Cu or Cu alloy wire, but it is lower than that in the Ag wire. The present invention was developed as a result of extensive research in view of the current situation, and the discovery of a practical thin bonding wire that is economical and has high performance. That is, in the present invention, the outer periphery of a core wire made of Cu or Cu alloy wire is coated with Pd or Pd alloy either directly or through an intermediate layer. As shown in Fig. 1, which explains one example of the present invention with drawings, Cu, Cu-Sn, Cu-In, Cu-Ni, Cu-
Pd, Pd-Ni,
A coating layer 2 of Pd-CO or the like is provided. In the present invention, the thickness of the coating layer 2 is not particularly limited, but is preferably 0.01 to 2 μm.
0.02 to 0.5μ is preferable from the economic point of view. By providing a coating layer of this thickness, corrosion resistance and strength can be improved. That is, the present invention uses Cu wire or Cu wire.
This makes more effective use of the conductivity and strength characteristics of alloy wire. In particular, the present invention can have the additional effect of exhibiting performance comparable to expensive Cu alloy wire even when using an inexpensive pure Cu wire as the core material. In other words, pure Cu wire usually has better conductivity than Cu alloy wire, but is inferior in strength. However, in the present invention, we have developed a wire that uses pure Cu wire as a core material but has high conductivity and strength. It is ideal because Cu and Pd form an alloy and strengthen, especially in the bonding area. Moreover, the one shown in FIG. 2 is one in which an intermediate layer 3 is provided and a covering layer of Pd or a Pd alloy is provided. That is, since the intermediate layer uses a metal such as Ni or Co, which is inexpensive and can improve corrosion resistance and diffusion deterioration, the coating layer 2 of Pd or Pd alloy can be made thinner, such as 0.02 as described above. A sufficient effect can be achieved with a thickness of about 0.5μ. The thickness of the intermediate layer is not particularly limited either, but it is usually about 0.02 to 0.1 .mu.m. In the present invention, the intermediate layer and the covering layer may be formed by vacuum plating, mechanical pressure bonding, etc., but electroplating is most advantageous. Next, embodiments of the present invention will be described in detail. EXAMPLE Oxygen-free copper wire (20 μΦ) was coated with the metals or alloys shown in Table 1 by electroplating to obtain thin bonding wires of the present invention and comparative thin wires. The bonded thin wire obtained in this way was attached to a 16-pin lead frame (made of Cu-0.15 Sn-0.01P alloy).
After the chips were die-bonded, wire bonding was performed using an atmospheric heat fusion method. The bonding conditions were 10% H2 - N2 atmosphere, temperature raised to 190℃, first bonding pressure 50g, second bonding pressure.
I went with 80gr. The strength of the bonding obtained in this way was measured using a pull-raster, and then the IC molded with epoxy resin was held at 130°C with a pressurizer at saturation pressure for 2000 hours with 12V applied to determine the probability of disconnection and short circuit. The probability was measured. The results are shown in Table 1.

【表】 上表から明らかの如く本考案半導体用ボンデイ
ング細線は従来のAu線(比較例3)と同様に断
線及び短絡することなく、且つ強度に優れてい
る。又Cu線(比較例1)は短絡はしないがICを
破壊して電子顕微鏡で観察したところCuのマイ
グレーシヨンが見られた。これに対し本考案細線
は全くその痕跡も見られなかつた。 以上詳述した如く本考案によれば高価なAu線
に代えて安価にして高性能を有するボンデイング
細線をうる等顕著な効果を有する。
[Table] As is clear from the above table, the thin bonding wire for semiconductors of the present invention does not break or short-circuit and has excellent strength like the conventional Au wire (Comparative Example 3). Further, although the Cu wire (Comparative Example 1) did not cause short circuit, when the IC was destroyed and observed under an electron microscope, migration of Cu was observed. In contrast, no trace of this was observed in the thin wire of the present invention. As described in detail above, the present invention has remarkable effects such as providing a bonding thin wire with low cost and high performance in place of the expensive Au wire.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図及び第2図は本考案半導体用ボンデイン
グ細線の1例を示す断面図である。 1……心線、2……被覆層、3……中間層。
FIGS. 1 and 2 are cross-sectional views showing one example of the semiconductor bonding thin wire of the present invention. 1... Core wire, 2... Covering layer, 3... Intermediate layer.

Claims (1)

【実用新案登録請求の範囲】 (1) Cu又はCu合金の心線の外周に直接又は中間
層を介してPd又はPd合金の被覆層を設けたこ
とを特徴とする半導体用ボンデイング細線。 (2) 中間層としてNi,CO又はこれらの合金から
ならることを特徴とする実用新案登録請求の範
囲第1項記載の半導体用ボンデイング細線。
[Claims for Utility Model Registration] (1) A thin bonding wire for semiconductors, characterized in that a coating layer of Pd or Pd alloy is provided on the outer periphery of a core wire of Cu or Cu alloy, either directly or via an intermediate layer. (2) The thin bonding wire for semiconductors as set forth in claim 1 of the utility model registration claim, characterized in that the intermediate layer is made of Ni, CO, or an alloy thereof.
JP1984047473U 1984-03-31 1984-03-31 Bonding thin wire for semiconductors Granted JPS60160554U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1984047473U JPS60160554U (en) 1984-03-31 1984-03-31 Bonding thin wire for semiconductors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1984047473U JPS60160554U (en) 1984-03-31 1984-03-31 Bonding thin wire for semiconductors

Publications (2)

Publication Number Publication Date
JPS60160554U JPS60160554U (en) 1985-10-25
JPH034030Y2 true JPH034030Y2 (en) 1991-02-01

Family

ID=30562833

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1984047473U Granted JPS60160554U (en) 1984-03-31 1984-03-31 Bonding thin wire for semiconductors

Country Status (1)

Country Link
JP (1) JPS60160554U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2002023618A1 (en) * 2000-09-18 2004-01-22 新日本製鐵株式会社 Semiconductor bonding wire and method of manufacturing the same
JP2006216929A (en) * 2005-01-05 2006-08-17 Nippon Steel Corp Bonding wire for semiconductor device

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200414453A (en) * 2002-03-26 2004-08-01 Sumitomo Electric Wintec Inc Bonding wire and IC device using the bonding wire
JP4672373B2 (en) * 2005-01-05 2011-04-20 新日鉄マテリアルズ株式会社 Bonding wires for semiconductor devices
KR101019811B1 (en) * 2005-01-05 2011-03-04 신닛테츠 마테리알즈 가부시키가이샤 Bonding wire for semiconductor device
JP4349641B1 (en) * 2009-03-23 2009-10-21 田中電子工業株式会社 Coated copper wire for ball bonding
JP5393614B2 (en) * 2010-08-03 2014-01-22 新日鉄住金マテリアルズ株式会社 Bonding wires for semiconductor devices
SG11201608819VA (en) * 2014-04-21 2016-12-29 Nippon Steel & Sumikin Mat Co Bonding wire for semiconductor device
WO2016189752A1 (en) 2015-05-26 2016-12-01 日鉄住金マイクロメタル株式会社 Bonding wire for semiconductor device
JP6002300B1 (en) 2015-09-02 2016-10-05 田中電子工業株式会社 Palladium (Pd) coated copper wire for ball bonding

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2002023618A1 (en) * 2000-09-18 2004-01-22 新日本製鐵株式会社 Semiconductor bonding wire and method of manufacturing the same
JP2010166079A (en) * 2000-09-18 2010-07-29 Nippon Steel Materials Co Ltd Bonding wire for semiconductor and method of manufacturing the same
JP2010166080A (en) * 2000-09-18 2010-07-29 Nippon Steel Materials Co Ltd Bonding wire for semiconductor and method of manufacturing the same
JP2011124611A (en) * 2000-09-18 2011-06-23 Nippon Steel Materials Co Ltd Bonding wire for semiconductor
JP4868694B2 (en) * 2000-09-18 2012-02-01 新日鉄マテリアルズ株式会社 Bonding wire for semiconductor
JP2006216929A (en) * 2005-01-05 2006-08-17 Nippon Steel Corp Bonding wire for semiconductor device

Also Published As

Publication number Publication date
JPS60160554U (en) 1985-10-25

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