SG10201604101QA - Copper alloy fine wire for ball bonding - Google Patents
Copper alloy fine wire for ball bondingInfo
- Publication number
- SG10201604101QA SG10201604101QA SG10201604101QA SG10201604101QA SG10201604101QA SG 10201604101Q A SG10201604101Q A SG 10201604101QA SG 10201604101Q A SG10201604101Q A SG 10201604101QA SG 10201604101Q A SG10201604101Q A SG 10201604101QA SG 10201604101Q A SG10201604101Q A SG 10201604101QA
- Authority
- SG
- Singapore
- Prior art keywords
- copper alloy
- fine wire
- ball bonding
- alloy fine
- bonding
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/438—Post-treatment of the connector
- H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/4557—Plural coating layers
- H01L2224/45572—Two-layer stack coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48455—Details of wedge bonds
- H01L2224/48456—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015173146A JP6369994B2 (en) | 2015-09-02 | 2015-09-02 | Copper alloy thin wire for ball bonding |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201604101QA true SG10201604101QA (en) | 2017-04-27 |
Family
ID=58238203
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201604101QA SG10201604101QA (en) | 2015-09-02 | 2016-05-23 | Copper alloy fine wire for ball bonding |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6369994B2 (en) |
CN (1) | CN106486448B (en) |
SG (1) | SG10201604101QA (en) |
TW (1) | TWI643274B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114540660A (en) * | 2021-11-11 | 2022-05-27 | 佛山中国发明成果转化研究院 | High-strength high-conductivity copper alloy and preparation method thereof |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5834536B2 (en) * | 1980-06-06 | 1983-07-27 | 日本鉱業株式会社 | Copper alloy for lead material of semiconductor equipment |
JPS61157650A (en) * | 1984-12-28 | 1986-07-17 | Hitachi Metals Ltd | Copper alloy for lead frame |
EP1894667A4 (en) * | 2005-06-10 | 2009-12-02 | Senju Metal Industry Co | METHOD FOR SOLDERING ELECTROLESS Ni PLATING PART |
JP4691533B2 (en) * | 2006-08-31 | 2011-06-01 | 新日鉄マテリアルズ株式会社 | Copper alloy bonding wire for semiconductor devices |
JP4705078B2 (en) * | 2006-08-31 | 2011-06-22 | 新日鉄マテリアルズ株式会社 | Copper alloy bonding wire for semiconductor devices |
JP4482605B1 (en) * | 2009-01-23 | 2010-06-16 | 田中電子工業株式会社 | High purity Cu bonding wire |
SG177358A1 (en) * | 2009-06-24 | 2012-02-28 | Nippon Steel Materials Co Ltd | Copper alloy bonding wire for semiconductor |
WO2011129256A1 (en) * | 2010-04-14 | 2011-10-20 | タツタ電線株式会社 | Bonding wire |
JP5053456B1 (en) * | 2011-12-28 | 2012-10-17 | 田中電子工業株式会社 | High purity copper wire for semiconductor device connection |
JP5668087B2 (en) * | 2013-02-22 | 2015-02-12 | 田中電子工業株式会社 | Structure of copper dilute nickel alloy wire for semiconductor device bonding |
JP2015023213A (en) * | 2013-07-22 | 2015-02-02 | 株式会社デンソー | Electronic device |
JP6254841B2 (en) * | 2013-12-17 | 2017-12-27 | 新日鉄住金マテリアルズ株式会社 | Bonding wires for semiconductor devices |
-
2015
- 2015-09-02 JP JP2015173146A patent/JP6369994B2/en active Active
-
2016
- 2016-03-22 TW TW105108784A patent/TWI643274B/en active
- 2016-05-23 SG SG10201604101QA patent/SG10201604101QA/en unknown
- 2016-06-12 CN CN201610409423.8A patent/CN106486448B/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2017048432A (en) | 2017-03-09 |
JP6369994B2 (en) | 2018-08-08 |
CN106486448A (en) | 2017-03-08 |
CN106486448B (en) | 2020-09-29 |
TW201711116A (en) | 2017-03-16 |
TWI643274B (en) | 2018-12-01 |
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