JPWO2011129256A1 - ボンディングワイヤ - Google Patents
ボンディングワイヤ Download PDFInfo
- Publication number
- JPWO2011129256A1 JPWO2011129256A1 JP2012510635A JP2012510635A JPWO2011129256A1 JP WO2011129256 A1 JPWO2011129256 A1 JP WO2011129256A1 JP 2012510635 A JP2012510635 A JP 2012510635A JP 2012510635 A JP2012510635 A JP 2012510635A JP WO2011129256 A1 JPWO2011129256 A1 JP WO2011129256A1
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- Prior art keywords
- wire
- coating layer
- bonding
- core material
- added
- Prior art date
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- 239000011247 coating layer Substances 0.000 claims abstract description 44
- 230000003647 oxidation Effects 0.000 claims abstract description 35
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 35
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000011162 core material Substances 0.000 claims abstract description 28
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000010949 copper Substances 0.000 claims abstract description 22
- 229910052802 copper Inorganic materials 0.000 claims abstract description 21
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 20
- 239000004020 conductor Substances 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 16
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 16
- 239000010931 gold Substances 0.000 claims description 23
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 22
- 229910052737 gold Inorganic materials 0.000 claims description 14
- 229910052698 phosphorus Inorganic materials 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 230000006866 deterioration Effects 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 150000001875 compounds Chemical class 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 4
- 230000000052 comparative effect Effects 0.000 description 18
- 238000010265 fast atom bombardment Methods 0.000 description 17
- 238000011156 evaluation Methods 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000010410 layer Substances 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000002345 surface coating layer Substances 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 229910052762 osmium Inorganic materials 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000010944 silver (metal) Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 230000002195 synergetic effect Effects 0.000 description 2
- 238000005496 tempering Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910017888 Cu—P Inorganic materials 0.000 description 1
- 241000238557 Decapoda Species 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910018104 Ni-P Inorganic materials 0.000 description 1
- 229910018536 Ni—P Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
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- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0227—Rods, wires
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Abstract
Description
1stボンドが形成されれば、キャピラリー10aは、一定高さまで上昇した後(同図(c))、導体配線cの真上まで移動する(同図(d)〜(e))。このとき、安定したループを形成するため、キャピラリー10aに特殊な動きをさせてワイヤWに「くせ」を付ける動作をする場合がある(同図(d)の鎖線から実線参照)。
その被覆金属(被覆層)2としては、金(Au)、白金(Pt)、パラジウム(Pd)、銀(Ag)、ニッケル(Ni)等が採用されている(特許文献1〜3)。
また、集積回路素子の電極aへの接続において、ボールbが下向き槍状(逆円錐状)になっていると、上記ボールbの電極aへの押付け時、そのボールbの尖鋭端によって電極aを損傷させる恐れがあるため、ボールbはできるだけ、真球であることが好ましい。そのボールbの真球度を高めるために、上記被覆層2の厚みtを芯線径の0.001以下としたり(特許文献1請求項1)、同じく被覆層2の厚みtを0.001〜0.02μmとしたり(特許文献3請求項1)、芯材1の銅よりも高融点の耐酸化金属で被覆層2を形成したりしている(特許文献2段落0014)。
また、芯材1の銅に、リン(P)、ボロン(B)、ビスマス(Bi)、錫(Sn)、銀(Ag)、マンガン(Mg)を添加して、ピール試験(剥離試験)での破断伸びを増加させると共に、ボールの溶融時にそのP等の添加金属が被覆層2を形成する耐酸化性金属との相乗効果によって、ボールの真球性を向上させる技術も開示されている(特許文献4段落0055)。
その作業の安定性の向上には、芯材1の電気抵抗値を高めることが考えられ、その場合、上記P等を選択し得る。その電気抵抗値を高めることで、FAB形成の際のスパークを低電流・短時間で行うことができる。しかし、そのP等を添加した場合、耐酸化性が劣化する恐れがある。
また、作業を高速化すると、上記ボールボンディング法による接続において、図1(e)〜(f)に示した、キャピラリー10aが導体配線cに向かって降下し、ワイヤWを導体配線(2ndターゲット)cに押付けて、ワイヤWを海老の尻尾のように屈曲させると(同図(f)参照)、その屈曲に伴って被覆層2に亀裂が入る場合がある。被覆層2に亀裂が入れば、その亀裂個所の耐酸化性が劣化することとなり、同図(h)におけるボールbの形成時、その真球の形成に問題が生じる。
このPの添加によって電気抵抗値が高くなり、FAB形成の際のスパークを低電流・短時間で安定して供給することによってそのFABの形成ができる。
Pは、添加しても加工熱安定性がある上に、一般的にCu−P合金として販売されていて、その入手も容易である上に、所要の添加量を得やすい。これに対し、Bは熱安定性が悪いことから、添加が困難であり、Biは環境面から好ましくなく、Snは溶解によって煤ができる問題があり、Agは酸化し易いことから、信頼性が劣り、Mgは蒸気圧が低いことから添加し難い問題がある。
このように、Pと化合しないAu又はPt族であれば、Pの添加による電気抵抗値の向上を得ることができるとともに、Au等の添加による耐酸化性の向上を図ることができる。
さらに、最近ではより脆弱な電極aが使われることがあるため、チップクラックに対してはより要求が厳しくなっている。そのため、Pの添加量及びAu等の添加量についてはより好ましい範囲はPにあっては、50ppm以下、Au等にあっては合計で1ppm以上50ppm以下とする。この範囲であれば、上記の効果が得られるとともに、ボールbが硬くなりすぎないため、より脆弱な電極aにもチップクラックを生じることなく、1st接合できる。一方でPが50ppmを超えて250ppm以下またはAu等が50ppmを超えて100ppm以下添加されると、ボールbが硬くなって、脆弱な電極aに用いることができなくなる。
また、線径Lの下限を12μm以上としたのは、12μm未満ではボンディング前にオペレータがワイヤWをキャピラリー10aに通すのが困難になり、作業性が悪くなるからである。
芯材1の銅純度を99.9質量%(3N)以上としたのは、銅の高導電性を担保するためである。
このようにすれば、上記と同様に、Pの添加によって、耐酸化性の劣化を招くことなく、電気抵抗値が高くなり、FAB形成の際のスパークを低電流・短時間で安定して供給することによってそのFABの形成ができる。
このPt又はPdは、上記のように、Pとは化合物を生成しないため、被覆層が溶けてもその化合物ができることがなく、電気抵抗値及び耐酸化性の向上は図られる。
また、Pd、Ptは、その融点が銅の融点より高いため、ボールbの真球度が増すことが期待できる。
なお、上記2nd接合時等において、ワイヤ(被覆層)に亀裂が生じても、その亀裂は、通常僅かであるため、上記芯材1中へのAu等の添加量でその酸化を十分に抑制する。
また、被覆層2の厚みtは薄いほど、ボールbの硬度が低くなり、Siチップ(電極a)の損傷の可能性が低くなるが、薄すぎると、ステッチボンド接合の際に芯材1の銅が露出する度合いが大きくなり、被覆層2を有さない銅ワイヤ程度のステッチボンド接合性しか発現できない。例えば、後記実施例と比較例の実験結果から理解できるように、2回以上のマシンストップが生じる恐れがある。このため、その実施例と比較例の実験結果から、被覆層2の厚みtは0.02μm以上とする。
一方、被覆層2が厚いと、ボールbの硬度が高くなり、Siチップ(電極a)の損傷の可能性が高くなる。このため、後記実施例と比較例の実験結果から、被覆層2の厚みtは0.09μm以下とする。
引張伸びを8%以上とするのは、ステッチボンド接合性を上げ、より安定したボンディング性を得るためである。
すなわち、まず、銅純度99.99質量%の純銅(4N)に、Au、Ru、Rh、Pd、Os、Ir、Pt及びPを所要ppm添加した8mm径の銅合金線を作製し、その銅合金線にPd、Ptを電解めっき法によって被覆し、その被覆線を巻き戻し、焼鈍炉を通したのち、再び巻き取り用リールで巻き取ることによって連続拡散熱処理を行った。焼鈍炉は炉長1mの炉芯管を有する電気炉を用い、炉芯管には窒素ガスを流した。その炉温度は500℃以上800℃以下として被覆線(銅合金線)の温度を200〜500℃とし、その被覆線の走行速度は5〜60m/分とした。
以上の拡散熱処理を施して銅線(芯材)1と被覆層2の密着性を高めた後、線径15〜50μmまで伸線し、さらに、引張伸びが8%以上となるように調質熱処理を行って、被覆層2の厚みt:0.011〜0.134μmのボンディングワイヤW(実施例3〜15及び比較例1〜10)を得た。
〔表面被覆層の厚み〕
オージェ分光分析法による深さ分析を行った。深さ分析はArイオンでスパッタしながらPdまたはPtの濃度を測定し、SiO2換算して表層からの距離を算出した。表面被覆層の厚みは、表層のPdまたはPt濃度の測定値の1/2の濃度になる点までを表面被覆層の厚みとした(図3参照)。
〔添加元素の分析〕
ICP分析を用いた。
〔連続ボンディング性〕
ボンディングマシンで、10,000回の連続ボンディングを行い、マシンストップが発生しなければA、1回のマシンストップでB、2回以上のマシンストップが起こればDとした。
連続ボンディングはステージ温度が低くなれば困難になることから、200℃、150℃の2水準で行った。
また、ステージ温度130℃でも同様の連続ボンディングを行った。このときの評価については、マシンストップの発生なしの場合をA、1回のマシンストップではB、2〜3回のマシンストップでC、3回以上のマシンストップが起こればDとした。
〔HTST〕
ボンディング後、200℃に加熱された大気炉にリードフレームを入れ、1000hr経過後のワイヤWの状態を光学顕微鏡500倍の倍率で確認した。酸化が進んでいないものはA、キズが発生し、Cuが露出することによってワイヤWに酸化部が点在しているものはDとした。
〔FABの安定性〕
100個のFABを作製し、95%以上が真球状ならA、90%以上95%未満が真球状ならB、90%未満ならDとした。
〔1st接合部のSiチップ損傷〕
ボンディング後、1stボール接合部直下のSiチップ損傷を評価するために、ボール接合部および電極膜を王水で溶解し、Siチップのクラックを走査型電子顕微鏡(SEM)500倍で観察した。
100個の接合部を観察して5μm未満の微小なピットが1個もしくはまったく見られない場合はA、5μm未満の微小なピットが2〜5個ある場合はB、5μm以上のクラックが2個以上もしくは5μm未満の微小なピットが6個以上認められた場合をDとした。
〔総合評価〕
A:連続ボンディング性の評価が200℃、150℃ともにAであり、かつ他の評価もAであるもの
B:連続ボンディング性の評価が200℃ではA、150℃ではBであり、かつ他の評価もAであるもの
C:連続ボンディング性の評価が130℃でCであり、かつ他の評価がA又はBのもの
D:ひとつでもDのあるもの
このA、B、C、Dの内、A、Bを良好とし、Cは使用し得るものとした。
また、芯材1にAuまたはPt族を1ppm以上添加したものはHTSTの結果が良好になり(実施例1〜20、比較例1、2、5、7、9〜12)、1ppm未満のものは耐酸化性が低くなる(比較例3、4、6、8)。これらにおいて、同50ppmを超えたものについては、被覆層厚tが0.09μm以下であっても、ボールbが硬くなるため、電極aに若干の損傷が認められるようになる(比較例1、7)。同100ppmを超えたものについては、被覆層厚tが0.09μm以下であっても、電極aに損傷が生じ、使用上問題が起こる(比較例5、9、10)。
1 芯材
2 被覆層
a 集積回路素子の電極
b ボンディングボール
c 回路配線基板の導体配線
Claims (5)
- 集積回路素子の電極(a)と回路配線基板の導体配線(c)をボールボンディング法によって接続するための線径(L):12μm以上50.8μm以下のボンディングワイヤ(W)であって、
その芯材(1)が、金又は白金族から少なくとも1種以上を耐酸化性を向上するために添加するとともに、リンを電気抵抗向上のために添加した純度99.9質量%以上の銅からなり、
その芯材(1)の外周全面に、耐酸化性の白金又はパラジウムの厚み(t):0.02〜0.09μmの被覆層(2)を形成したことを特徴とするボンディングワイヤ。 - 上記被覆層(2)の厚み(t)を0.04〜0.09μmとしたことを特徴とする請求項1に記載のボンディングワイヤ。
- 上記被覆層(2)の厚み(t)を0.05〜0.09μmとしたことを特徴とする請求項1に記載のボンディングワイヤ。
- 上記リンの添加量:2〜250ppm、上記金又は白金族から少なくとも1種にあっては、その合計添加量:1〜100ppmとしたことを特徴とする請求項1乃至3の何れかに記載のボンディングワイヤ。
- 上記リンの添加量:10〜50ppm、上記金又は白金族から少なくとも1種にあっては、その合計添加量:1〜50ppmとしたことを特徴とする請求項1乃至3の何れかに記載のボンディングワイヤ。
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JP5219316B1 (ja) * | 2012-09-28 | 2013-06-26 | 田中電子工業株式会社 | 半導体装置接続用銅白金合金細線 |
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