JP2003133361A - ボンディングワイヤー - Google Patents

ボンディングワイヤー

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Publication number
JP2003133361A
JP2003133361A JP2001324377A JP2001324377A JP2003133361A JP 2003133361 A JP2003133361 A JP 2003133361A JP 2001324377 A JP2001324377 A JP 2001324377A JP 2001324377 A JP2001324377 A JP 2001324377A JP 2003133361 A JP2003133361 A JP 2003133361A
Authority
JP
Japan
Prior art keywords
metal
bonding
wire
diameter
bonding wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001324377A
Other languages
English (en)
Inventor
Shingo Kaimori
信吾 改森
Takeshi Nonaka
毅 野中
Masato Fukagaya
正人 深萱
Yuuji Sugimoto
裕示 杉本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SUMIDEN MAGNET WIRE KK
Original Assignee
SUMIDEN MAGNET WIRE KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SUMIDEN MAGNET WIRE KK filed Critical SUMIDEN MAGNET WIRE KK
Priority to JP2001324377A priority Critical patent/JP2003133361A/ja
Publication of JP2003133361A publication Critical patent/JP2003133361A/ja
Withdrawn legal-status Critical Current

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】 【課題】 集積回路素子（ＩＣ、ＬＳＩ、トランジスタ
等）上の電極と、回路配線基板（リードフレーム、セラ
ミックス基板、プリント基板等）の導体配線とを接続す
るボンディングワイヤーであって、安価、且つ、表面酸
化が起こらず接合性良好で、小径ボールを安定して形成
させることができ、高密度配線でのボンディングが可能
なボンディングワイヤーを得る。 【解決手段】 中心金属が銅などの良導電率金属から
なり、中心金属の表面を金などの貴金属で被覆したボン
ディングワイヤーであって、中心金属の外径が５０μｍ
以下で、被覆貴金属の厚みを中心金属ワイヤー径の０．
０００５以下とする。

Description

【発明の詳細な説明】
【０００１】
【発明の属する技術分野】本発明は、集積回路素子（Ｉ
Ｃ、ＬＳＩ、トランジスタ等）上の電極と、回路配線基
板（リードフレーム、セラミックス基板、プリント基板
等）の導体配線とを接続することなどに用いられるボン
ディングワイヤーに関するものである。
【０００２】
【従来の技術】集積回路素子と回路配線基盤との接続法
としては、ボールボンディング法、ウェッヂボンディン
グ法、半田接続法、抵抗溶接法等が行われているが、そ
の中でも金細線のボンディングワイヤーを用いたボール
ボンディング法が一般的である。
【０００３】一般的なボールボンディング法のプロセス
とは以下の通りである。移動自在なキャピラリー（以下
「ボンディングツール」という）にガイドされたワイヤ
ーの先端に電極トーチ間との放電によりワイヤー金属を
溶融し、ボールを形成する。その後、第１ボンディング
点である集積回路素子上の電極に、前記ボールを超音波
を印加しつつ押圧して接合を形成する。さらにワイヤー
を引き出しながら、ボンディングツールを第２ボンディ
ング点である回路配線基板の電極に移動して、同様に接
続する（このときボールの形成は無い）。接続後ボンデ
ィングツールを上昇させワイヤーをクランプで引っぱる
ことによりワイヤーを接続部近傍で切断する。
【０００４】集積回路素子と回路配線基板が接続された
後は、保護のために封止がなされる。封止方法としては
セラミックや金属筐体などで覆うという方法もあるが、
溶融樹脂流で封止、加熱硬化(もしくは冷却硬化)する樹
脂封止が広く用いられている。
【０００５】
【発明が解決しようとする課題】従来、ボンディングワ
イヤーの素材としては金が使用されているが、高価であ
るため価格の安い他金属にて構成されるボンディングワ
イヤーの開発が望まれている。その一例として、特公平
８−２８３８２号公報に、金よりも剛性が有り、低コス
トである銅を素材としたボンデイングワイヤーが開示さ
れている。しかし、銅は裸のままでは、表面の酸化が起
こりやすいという欠点がある。そのため、長時間保存後
や、新品でも、ボンデイング時に基板からの熱伝導で酸
化が進行するため、接合性が悪いという問題が有る。
【０００６】製造コストを抑え且つ表面酸化を防ぎ、良
好な接合性を実現する方法として、安価な金属の表面を
貴金属で覆う方法が考えられる。例えば金メッキ銅ボン
ディングワイヤー等では低製造コストと良好接合性の両
立できる可能性がある。
【０００７】しかし、金メッキ銅ボンディングワイヤー
にも課題が有る。それは、近年の半導体デバイスの高集
積化、小型化トレンドよりボンディングワイヤーの配線
には隣接ワイヤー間隔の狭小化が要求されており、この
狭小化には径の小さいボールの形成が不可欠であるが、
金メッキ銅ボンディングワイヤーでは小径ボールを形成
しようとすると真球とならず槍状となり且つ形状の再現
性も不安定となり接合信頼性が低下するため適当できな
いというものである。ここで、槍状とは、文字通り、先
の尖った槍の先端のような形状のことをいう。
【０００８】
【課題を解決するための手段】本発明は、ボールボンデ
ィングのときに、小径ボールを安定して形成できるボン
ディングワイヤーを得ることを目的とするもので、表面
を中心金属と異なる貴金属でメッキ被覆したボンディン
グワイヤーであって、中心金属の外径が５０μｍ以下
で、被覆貴金属の厚みが中心金属ワイヤー径の０．００
１以下であることを特徴とする。
【０００９】
【発明の実施の形態】本発明者等が鋭意検討した結果、
表面を酸化しにくい貴金属で被覆したボンディングワイ
ヤーに於いて中心金属径に対し、貴金属被覆厚の比率が
０．００１以下（貴金属被覆厚/中心金属ワイヤー径≦
０．００１）であればボール形成時に被覆する貴金属の
影響が非常に小さいために真球形成が可能となることを
発見した。ここで小径ボールが形成可能とは、ワイヤー
径の２倍から３倍の径のボールを形成時に真球となる確
率が９５％以上であることとする。なお、中心金属径に
対する貴金属被覆厚の比率を０．０００３以下とすれ
ば、真球となる確率は、ほぼ１００％に近くなるので、
更に好ましい。径の小さい真球を形成することが必要な
ので使用ワイヤー径は５０μｍ以下、［請求項１］更に
望ましくは３０μｍ以下とすることが好ましい。
【００１０】被覆貴金属、中心金属が共に溶融、混合す
るボール形成に於いては被覆貴金属厚みのボール形成能
への影響は大きいが、酸化防止能に関しては、貴金属厚
が非常に薄厚でも中心金属と空気中の酸素との接触を絶
つことが可能であるため被覆貴金属厚みの影響は小さ
い。ただしあまり薄厚だと製造が難しい上に、何らかの
要因で表面に傷がつくと容易に中心金属が剥き出しとな
り酸化防止能が発揮できなくなるので被覆厚は０．００
１μｍ以上とすることが好ましい。
【００１１】貴金属の被覆法としては電気メッキ形成が
好ましい。それも、やや太めの中心金属ワイヤーに、厚
メッキを施したものを、伸線することにより、狙いの細
いワイヤー径、薄メッキ厚を得ることが好ましい。化学
蒸着方法、物理蒸着方法等の他の方法でも被覆の形成は
可能であるが、製造コストが高くなる上に、それらの方
法で製造したワイヤーは厚みが不均一になり表面凹凸が
生じるためかボンディングツールのワイヤー通過穴内面
との摩擦が大きくボンディングワイヤーのフィード性が
悪くなり易い。フィード性が悪い他に、中心金属との密
着力が低いために剥がれた被覆金属の欠片がボンディン
グツール内で詰まる不具合も発生しやすい。
【００１２】被覆金属として利用できる貴金属には金、
パラディウム、白金等が挙げられるが、展性に富む金
は、ボンディングの際にワイヤーが受ける変形等に容易
に追従するので好ましい。また、前述の「やや太い中心
金属ワイヤーに厚メッキを施したものを伸線して狙いの
ワイヤー径、メッキ厚を出す製造法」を実施するに際し
ても、伸線の容易さという点で、被覆金属として、展性
に富む金を採用することが好ましい。［請求項２］ 中心金属の良導電率金属としては、銀、銅等が挙げられ
るが、銅の方が世界的な産出量が多く、安定供給が可能
であり、安価であるので、より好適である。［請求項
３］
【００１３】
【実施例】純度９９．９９５％、２００μｍの銅ボンデ
ィングワイヤーに電気メッキにて厚みの異なる金メッキ
被覆を形成した。それらをそれぞれ伸線することにより
中心銅２０μｍ、メッキ厚０．１μｍ（比較例１）、
０．０５μｍ（比較例２）、０．０１μｍ（実施例
１）、０．００５μｍ（実施例２）、の金メッキ銅ボン
ディングワイヤーを作製した。
【００１４】前記の通り作製した金メッキ銅ボンディン
グワイヤーを用いて、ボンダー（（株）カイジョー製の
ＦＢ１３７(装置型番)）で５０μｍ径のボールを形成さ
せ、その際の真球形成率を調査した。ここで、ボール形
成はワイヤー先端とスパークロッド距離４００μｍと
し、窒素を１リットル／分の流量でワイヤー先端部に吹
き付けて、その付近の酸素濃度を低減させた状態で行っ
た。メッキ厚０．１μｍ（比較例１）、０．０５μｍ
（比較例２）では、形成させたボール数の５０％以上
が、槍状の不良であったが、メッキ厚０．０１μｍ（実
施例１）では不良率３％、０．００５μｍ（実施例２）
では不良率１％以下であり、安定して真球状のボールが
形成できた。
【００１５】
【発明の効果】以上説明したように本発明のボンディン
グワイヤーは、安価、且つ、表面酸化が起こらず接合性
良好なボンディングワイヤーで、小径ボールを安定して
形成させることができ、高密度配線でのボンディングが
可能である。
───────────────────────────────────────────────────── フロントページの続き (72)発明者 深萱 正人 名古屋市南区菊住一丁目７番10号 住電マ グネットワイヤー株式会社内 (72)発明者 杉本 裕示 名古屋市南区菊住一丁目７番10号 住電マ グネットワイヤー株式会社内 Ｆターム(参考） 5F044 FF02 FF04 FF06 FF10

Claims (3)

    【特許請求の範囲】
  1. 【請求項１】 中心金属が良導電率金属からなり、前記
    中心金属の表面を貴金属でメッキ被覆したボンディング
    ワイヤーであって、前記中心金属の外径が５０μｍ以下
    で、被覆貴金属の厚みが中心金属ワイヤー径の０．００
    １以下であることを特徴とするボンディングワイヤー。
  2. 【請求項２】 被覆金属が金であることを特徴とする請
    求項１記載のボンディングワイヤー。
  3. 【請求項３】 中心金属が銅である請求項１または、請
    求項２記載のボンディングワイヤー。
JP2001324377A 2001-10-23 2001-10-23 ボンディングワイヤー Withdrawn JP2003133361A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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Publication Number Publication Date
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Country Link
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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006216929A (ja) * 2005-01-05 2006-08-17 Nippon Steel Corp 半導体装置用ボンディングワイヤ
DE102005011028A1 (de) * 2005-03-08 2006-09-14 W.C. Heraeus Gmbh Kupferbonddraht mit verbesserten Bond- und Korrosionseigenschaften
JP2007012776A (ja) * 2005-06-29 2007-01-18 Nippon Steel Materials Co Ltd 半導体装置用ボンディングワイヤ
JP2010153918A (ja) * 2007-07-24 2010-07-08 Nippon Steel Materials Co Ltd 半導体装置用ボンディングワイヤ
WO2010087053A1 (ja) * 2009-01-27 2010-08-05 タツタ システム・エレクトロニクス株式会社 ボンディングワイヤ
CN102884615A (zh) * 2010-04-14 2013-01-16 大自达电线株式会社 焊线
WO2021205674A1 (ja) * 2020-04-10 2021-10-14 田中電子工業株式会社 金被覆ボンディングワイヤとその製造方法、半導体ワイヤ接合構造、及び半導体装置

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006216929A (ja) * 2005-01-05 2006-08-17 Nippon Steel Corp 半導体装置用ボンディングワイヤ
DE102005011028A1 (de) * 2005-03-08 2006-09-14 W.C. Heraeus Gmbh Kupferbonddraht mit verbesserten Bond- und Korrosionseigenschaften
US7645522B2 (en) 2005-03-08 2010-01-12 W.C. Heraeus Gmbh Copper bonding or superfine wire with improved bonding and corrosion properties
JP2007012776A (ja) * 2005-06-29 2007-01-18 Nippon Steel Materials Co Ltd 半導体装置用ボンディングワイヤ
JP2010153918A (ja) * 2007-07-24 2010-07-08 Nippon Steel Materials Co Ltd 半導体装置用ボンディングワイヤ
US9112059B2 (en) 2007-07-24 2015-08-18 Nippon Steel & Sumikin Materials Co., Ltd. Bonding wire for semiconductor device
WO2010087053A1 (ja) * 2009-01-27 2010-08-05 タツタ システム・エレクトロニクス株式会社 ボンディングワイヤ
CN102884615A (zh) * 2010-04-14 2013-01-16 大自达电线株式会社 焊线
WO2021205674A1 (ja) * 2020-04-10 2021-10-14 田中電子工業株式会社 金被覆ボンディングワイヤとその製造方法、半導体ワイヤ接合構造、及び半導体装置
JP7383798B2 (ja) 2020-04-10 2023-11-20 田中電子工業株式会社 金被覆ボンディングワイヤとその製造方法、半導体ワイヤ接合構造、及び半導体装置

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