TW201505112A - 用於接合應用之經塗覆銅線 - Google Patents
用於接合應用之經塗覆銅線 Download PDFInfo
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- TW201505112A TW201505112A TW103106523A TW103106523A TW201505112A TW 201505112 A TW201505112 A TW 201505112A TW 103106523 A TW103106523 A TW 103106523A TW 103106523 A TW103106523 A TW 103106523A TW 201505112 A TW201505112 A TW 201505112A
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0255—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in welding
- B23K35/0261—Rods, electrodes, wires
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
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- B23K35/0261—Rods, electrodes, wires
- B23K35/0266—Rods, electrodes, wires flux-cored
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/302—Cu as the principal constituent
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- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
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- B23K35/322—Selection of soldering or welding materials proper with the principal constituent melting at more than 1550 degrees C a Pt-group metal as principal constituent
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Abstract
本發明係關於接合線,其包含具有表面之核心,其中該核心包含銅作為主要組份,及疊加於該核心之該表面上之塗覆層,其中該塗覆層包含鈀作為主要組份,其中該核心包含銀及磷作為其他組份,其中該核心之銀含量與磷含量之間之比係在0.03至2之範圍內。
Description
本發明係關於接合線,其包含具有表面之核心及疊加於核心表面上之塗覆層,其中核心包含銅作為主要組份,其中塗覆層包含鈀作為主要組份,其中核心包含銀及磷作為其他組份,其中核心之銀含量與磷含量之間之比係在0.03至2範圍內。
本發明進一步係關於用於接合電子器件之系統,其包含第一接合墊、第二接合墊及本發明線,其中藉助楔接合將本發明線與至少一個接合墊連接。
本發明進一步係關於製造本發明線之方法。
接合線係用於製造半導體器件,其在半導體器件構造期間用於電互連積體電路與印刷電路板。此外,接合線係用於電力電子應用中以將電晶體、二極體及諸如此類與殼體之墊或銷電連接。雖然起初接合線係由金製成,但現今使用較便宜材料,例如銅。雖然銅線提供極好導電性及導熱性,但銅線之楔接合存在其挑戰。此外,銅線易受線氧化之影響。
關於線幾何形狀,最常見者為圓形截面之接合線及具有近乎矩形之截面之接合條帶。兩種類型之線幾何形狀具有使得其可用於具體應用之優勢。因此,兩種類型之幾何形狀在市場上均佔有其份額。例如,對於給定截面積接合條帶具有較大接觸面積。然而,條帶之彎曲受限且在接合時必須觀察條帶之定向以在條帶與其所接合之元件之間達成可接受之電接觸。而接合線對彎曲撓性更強。然而,在接合製程
中接合涉及線之焊接或較大變形,此可造成損壞或甚至破壞接合墊及與其接合之元件之基礎電結構。
對於本發明,術語接合線包含所有截面形狀及所有常見線直徑,但具有圓形截面及細直徑之接合線較佳。
一些最新研發係關於具有銅核心及保護塗覆層之接合線。由於高導電性而選擇銅作為核心材料。關於塗覆層,鈀係一種可能選擇。該等經塗覆接合線組合銅線之優勢與對氧化之較低敏感性。然而,關於接合線自身及接合製程,業內仍需要進一步改良接合線技術。
因此,本發明之目的係提供經改良接合線。
因此,本發明之另一目的係提供如下接合線:其具有良好處理性質且其在互連時無特殊需要,從而節約了成本。
本發明之目的亦為提供具有優良導電性及導熱性之接合線。
本發明之再一目的係提供呈現經改良可靠性之接合線。
本發明之再一目的係提供呈現經優良接合性之接合線。
本發明之另一目的係提供對於楔接合及/或第二接合顯示經改良接合性之接合線。
本發明之另一目的係提供如下接合線:其對於係楔接合之第二接合顯示經改良接合性,同時對於係球接合之第一接合之接合性能至少係足夠的。
本發明之另一目的係提供具有改良腐蝕抗性及/或氧化抗性之接合線。
另一目的係提供欲與標準晶片及接合技術一起使用之用於接合電子器件之系統,該系統顯示至少對於第二接合之降低之失效率。
另一目的係提供用於製造本發明接合線之方法,該方法顯示與已知方法相比基本上不增加製造成本。
令人驚奇地,已發現本發明線可解決至少一個上文所提及目
的。此外,已發現用於製造該等線之製程克服至少一個製造線之挑戰。此外,發現包含本發明線之系統在本發明線與其他電元件(例如印刷電路板、墊/銷等)之間之介面處更可靠。
獨立請求項之標的物對解決至少一個以上目的有貢獻,其中獨立請求項之從屬請求項代表本發明之較佳態樣,其標的物對解決至少一個上文所提及目的同樣有貢獻。
本發明之第一態樣係接合線,其包含:具有表面之核心,其中核心包含銅作為主要組份,及疊加於核心表面上之塗覆層,其中塗覆層包含鈀作為主要組份,其中核心包含銀及磷作為其他組份,其中核心之銀含量與磷含量之間之比係在0.03至2範圍內。
在較佳實施例中,銀含量對磷含量之比係在0.05至2範圍內,最佳在0.05至0.5範圍內。
若不提供其他具體定義,則組份之所有含量或份數目前以重量份數給出。特定而言,以百分比給出之份數應理解為重量%,且以ppm(百萬份數)給出之份數應理解為重量ppm。
術語「疊加」在本發明上下文中係用於描述第一項(例如銅核心)相對於第二項(例如塗覆層)之相對位置。可能地,其他項(例如中間層)可佈置於第一與第二項之間。較佳地,第二項係至少部分疊加於第一項上,例如佔第一項之總表面之至少30%、50%、70%或至少90%。最佳地,第二項係完全疊加於第一項上。術語「中間層」在本發明上下文中係介於銅核心與塗覆層間之線區域。在此區域中,如核心中之材料以及如塗覆層中之材料係組合存在。
線為尤其用於在微電子中接合之接合線。線較佳為一件式物
體。
若組份之份數超過所提及材料之所有其他組份,則此組份為「主要組份」。較佳地,主要組份佔材料總重量之至少50%。
結果驚奇地發現,控制銀含量與銅含量之比產生具有經改良之接合製程性質之線。特定而言,已發現楔接合性能之有利改良。
若核心之磷含量係在20ppm至300ppm範圍內,則該等改良尤其顯著。在更佳實施例中,磷含量係在30ppm至200ppm範圍內。結果已發現,該磷量對於核心之維氏硬度(Vickers hardness)似乎係可容許的,同時保持磷含量在氧化等方面之益處。
另外或另一選擇為,核心之銀含量為至少5ppm。在較佳實施例中,銀含量係在5ppm至1000ppm範圍內。在最佳實施例中,銀含量係在5ppm至100ppm範圍內。本發明之結果顯示,至少少量銀之存在增加線之有益機械性質(如柔軟度)。若在線核心中保持一定比率之銀及磷,則此增加尤其明顯。
較佳地,核心之銅含量為至少99.98%。此允許使用一般供應之用於線接合之銅材料,而不會因高純度規格而成本極高。進一步較佳地,核心之除銀以外之所有金屬雜質之總量合計小於30ppm。
一般而言,較佳者為其中塗覆層具有小於0.5μm之厚度之實施例。若塗覆層足夠薄,則此在接合製程中提供之塗覆層之效應可忽略。術語「厚度」在本發明上下文中係用於界定層在垂直於銅核心之縱向軸方向上之大小,該層係至少部分疊加於銅核心表面上。
關於塗覆層之組成,該層之鈀含量為至少50%,更佳至少95%。尤佳地,塗覆層係由純鈀與小於1%之其他組份組成。若塗覆層具有大量其他組份,則彼等組份較佳為貴金屬。
特定而言,本發明係關於細接合線。由於(例如)細線對氧化之敏感性,故所觀測到之效應對於該等細線特別有益。在本發明情形下,
術語「細線」係定義為直徑在8μm至80μm範圍內之線。
該等細線多半(但並非必須)具有基本上呈圓形之截面視圖。術語「截面視圖」在本發明上下文中係指切斷線之切口之視圖,其中切口平面垂直於線之縱向延伸。截面視圖可見於線之縱向延伸上之任何位置。截面中穿過線之「最長路徑」為可在截面視圖平面內穿過線之截面存在之最長弦。截面中穿過線之「最短路徑」為垂直於上文所定義之截面視圖平面內之最長路徑的最長弦。若線具有完美圓形截面,則最長路徑及最路徑變得無法區分並共享同一值。術語「直徑」係任何平面及在任何方向上之所有幾何直徑之算數平均值,其中所有平面垂直於線之縱向延伸。
一般較佳地,線之伸長率與線之直徑之比在0.25%/μm至0.75%/μm範圍內。線之伸長率E係以百分比數值給出。若給出線之初長度L並將線在其斷裂前拉伸至長度L’,則伸長率定義為E=(L’-L)/L。
在本發明之較佳實施例中,線滿足關係0.0008<E/(d*CP)<0.0375,其中E係以%量測之線之伸長率,d係以μm量測之線之直徑,且CP係以ppm量測之線核心之磷含量。該線具有端視對其伸長率及直徑之各別要求最佳化之磷含量。更佳地,線滿足關係0.002<E/(d*CP)<0.02,且最佳地,線滿足關係0.003<E/(d*CP)<0.015。
在本發明之進一步較佳實施例中,線滿足關係0.000025<E/(d*CAg)<0.15,其中E係以%量測之線之伸長率,d係以μm量測之線之直徑,且CAg係以ppm量測之核心線之銀含量。該線具有端視對其伸長率及直徑之各別要求最佳化之銀含量。更佳地,線滿足關係0.00025<E/(d*Ag)<0.15,且最佳地,線滿足關係0.005<E/(d*Ag)<0.12。
較佳在具有至少370℃溫度之退火步驟中處理本發明線。甚至更佳地,退火步驟之溫度為至少430℃,其中較高退火溫度可提供線之
較高伸長率值。
關於退火之其他參數,特定而言細線不需長時間暴露於退火溫度。在大多數情形下,藉由以給定速度用一定溫度輪廓牽拉線穿過給定長度之退火爐來進行退火。細線於退火溫度下之暴露時間通常在0.1秒至10秒範圍內。
對於較佳實施例之線,線核心之硬度不高於120.00 Hv0.5。此限制在自動化接合程序期間可發生之施加於接合墊上之最大力。若將機械敏感結構在接合墊下方對準,則該限制尤其有用。若接合墊係由軟材料(如鋁或金)組成,則尤其如此。敏感結構可包含(例如)一個或若干個多孔二氧化矽層,特定而言其介電常數小於2.5。該多孔且因此弱性之材料正變得愈來愈常用,此乃因其可有助於提高器件性能。因此,本發明接合線之機械性質係經最佳化以避免弱性層之破裂或其他損害。
理想地量測作為最終產品之線之線核心硬度,此意味著在已完成所有製造步驟(如塗覆及退火)後進行量測。為實施硬度量測,可製備線之金相學截面以產生平坦表面。此可在縱向方向上(更常見)或在橫向方向上進行。
進一步有利地,本發明線之比電阻係在1.65μOhm*cm至1.9μOhm*cm範圍內,該導電性適於許多應用。線之更佳電阻率係在1.8μOhm*cm至1.9μOhm*cm範圍內。
本發明之再一態樣係用於接合電子器件之系統,其包含第一接合墊、第二接合墊及本發明線,其中藉助楔接合將線與至少一個接合墊連接。系統中本發明線之此組合較佳,此乃因該線對於楔接合具有尤其有益性質之事實。
一般較佳地,在將20μm直徑之線接合至金接合墊之接合情形下,至少一個楔接合之製程窗口面積具有至少3500mA*g之值。
接合線之製程窗口面積之定義為本技術領域已知,且廣泛用於比較不同線。原則上,其係接合中所用之超音波能之接合窗口與接合中所用之力之接合窗口之乘積,其中所得接合必須滿足某些牽拉測試規格,例如3克之拉力、無引線不黏(non-stick on lead)等。給定線之製程窗口面積之實際值進一步取決於線直徑以及接合墊材料。為給出本發明線之性質之具體定義,所主張之製程窗口值係基於20μm=0.8密耳之線直徑,其中接合墊係由金組成。本發明系統之範疇並不限於此直徑之線及由金製成之接合墊,而係僅出於定義目的列舉此數據。
本發明之又一態樣係連接電器件之方法,其包含以下步驟:a.提供本發明線;b.藉助球接合或楔接合將線與器件之第一接合墊接合;及c.藉助楔接合將線與器件之第二接合墊接合;其中在不使用形成氣體之情況下實施步驟b及c。
本發明線顯示關於氧化效應之優良性質。若用鈀塗覆層完全囊封之銅核心與核心材料中一定量之磷組合存在,則尤其如此。所得性質允許在不使用形成氣體之情況下處理,且因此顯著節約成本及危險預警。
本技術領域內已知形成氣體為惰性氣體(如氮氣)與氫氣之混合物,其中氫氣內容物可提供經氧化線材料之還原反應。在本發明之意義上,省略形成氣體意味著不使用反應性化合物(如氫氣)。然而,使用惰性氣體(如氮氣)仍可為有利的。
本發明之又一態樣係製造本發明之接合線之方法,其包含以下步驟:a.提供具有所要求含量之磷及銀之銅核心前體;b.拉製該前體直至達到線核心之最終直徑;c.在拉製該前體之步驟b之前或之後,利用塗覆層之材料塗覆銅
核心;d.使經塗覆及拉製之線在一定溫度下退火最少時間。
關於步驟b至c,製造方法為本技術領域內眾所周知。應指出,塗覆層可藉由任何已知或適宜方法來施加,如機械塗覆、電鍍覆、無電鍍覆、物理氣相沈積(PVD)、化學氣相沈積(CVD)及其他方法。塗覆可在拉製線之前或之後進行,此可取決於各別塗層之性質及塗覆方法。特定而言,塗覆可在中間步驟實施,且在塗覆步驟之前以及之後進行線或前體之拉製。
關於步驟a,可將磷摻雜至銅核心中,如本技術領域內已知。
關於銀含量,可在核心材料之特定產生步驟中將銀添加至銅中。另一選擇為,銀含量可藉由選擇具有足夠雜質規格之可用銅來獲得。雖然不一定存在,但銀常作為雜質含於銅中,可在不施加其他製程步驟但分析控制原材料之情況下提供所要求之核心材料。
關於步驟d,以本技術領域內已知之受控方式實施退火,以根據各別要求使線軟化及/或使線之晶體結構最佳化。較佳地,在使線移動穿過退火爐並在已離開爐後纏繞至捲上時以動態方式實施退火。
所有測試及量測皆在T=20℃及50%之相對濕度下實施。
將測試試樣(即長度為1.0m之線)之兩個末端與提供I=10mA之恆定電流之電源連接。利用量測電壓之器件記錄電壓。對至少4個測試試樣重複此設定。下文所給計算使用四次量測之算數平均值。
根據R=U/I計算電阻R。
根據ρ=(R×A)/l計算比電阻ρ,其中A係線之平均截面積,且l係在量測電壓之器件之兩個量測點之間之線長度。
根據σ=1/ρ計算比導電率σ。
楔-楔接合-參數定義
在20℃下實施線與鍍金基板之接合,其中將該接合施加至金表面。在線與基板間形成具有45°角之第一楔接合後,將線以其第二末端楔入至基板。線之兩個末端之間之接合距離係在5mm至20mm範圍內。此距離係經選擇以確保在線與基板之間之角為45°。在楔接合期間,將頻率在60kHz至120kHz範圍內之超音波施加至接合工具40毫秒至500毫秒。
藉由實例進一步例示本發明。該等實例用於實例性闡明本發明,且並不意欲以任何方式限制本發明或申請專利範圍之範疇。
在坩堝中熔融一定量之至少99.99%純度之銅材料(「4N-銅」)。將少量銀(Ag)及磷(P)添加至熔體中,並使所添加組份在銅熔體中均勻分佈。計算銀及磷之添加量以達成10ppm Ag及75ppm P之份數。然後自熔體澆注線核心前體。
然後在若干個拉製步驟中拉製線核心前體,以形成直徑為20μm之線核心2。線核心2之截面基本上為圓形。應理解,因截面形狀、塗覆層厚度或諸如此類之波動,線直徑不應視為極確切之值。若目前界定線具有(例如)20μm之直徑,則該直徑應理解為在19.5μm至20.5μm範圍內。
然後利用由至少99%純度之鈀(Pd)組成之層3塗覆線核心。塗覆層3之厚度係在100nm或更小範圍內。因此,塗覆層並不顯著增加線直徑。
然後在退火步驟中使經塗覆線退火以進一步調整如伸長率、硬度、晶體結構及諸如此類之參數。藉由使線以確定速度穿過具有確定長度及溫度之退火爐以動態方式來實施退火。在離開爐後,將線纏繞於捲上用於封裝。
在本發明實例中,退火時間(即移動線之給定的一段保持在加熱爐中之時間)為約0.76s。
表1及表2顯示本發明線之若干個實例IW1至IW5之數據。實例性本發明線係以相同方式產生,在退火步驟中使其單獨暴露於不同退火溫度下。除溫度以外之其他退火參數不作改變。
此外,表1及2顯示市售接合線比較1及比較2之兩個樣品之數據。由於該等線之確切製程係未知的,故未獲得退火溫度之數據。所評價之所有線(本發明線及比較線)均具有0.8密耳=20μm之直徑。
其中:E伸長率(%)
BL 斷裂負載(克)
T 退火溫度(℃)
d 直徑(對於所有線,=20μm)
CP 磷濃度(ppm)
CAg 銀濃度(ppm)
備註:
「球形」性質係以目測方式評價並分類成四個種類(品質遞減):最好-良好-一般-差。其係在對於所評價之所有線而言均相同之標準條件下實施之球接合之球之形狀。
第二接合窗口USG(=超音波能)值通常較佳具有較低起始點(較低值)。
表1及表2之數據之評價顯示,本發明線的一些性質傑出,同時所評價之所有性質至少維持良好品質。
特定而言,本發明線通常顯示高第二接合窗口面積值,即4000或更高。對於比較實例,線比較2亦顯示高第二接合窗口面積,但其尾部拉力值具有高標準偏差,此對製程穩定性不利。此外,比較2樣品具有顯著較差之球形值。當與本發明線相比時,至少對於球接合應用,不會選擇線比較2。
對於另一比較線比較1,第二接合窗口面積顯著低於任一本發明線。此使得本發明線尤其有利於第二接合或楔接合應用。本發明線可為楔-楔接合應用之較佳選擇,但對於球-楔接合應用亦顯示優良結果。
應注意,實例IW5具有一些突出性質,例如伸長率值及/或線硬度值。此係由於此線已在400℃之略低溫度下退火之事實所致。退火製程之軟化效應在此範圍內同等較弱。另一方面,該線可有利於特殊應用,例如當要求尤其良好之球形或高斷裂負載時。
然而,在大多數應用中,較高伸長率值及較低線硬度係有利的。在此態樣及其他態樣中,IW1至IW4為本發明線之尤佳實例。
1‧‧‧線
2‧‧‧銅核心
3‧‧‧塗覆層
10‧‧‧電器件
11‧‧‧元件
15‧‧‧表面
17‧‧‧牽拉鉤
19‧‧‧角
20‧‧‧基板
21‧‧‧接合
23‧‧‧中心
L‧‧‧線條
在圖中例示本發明之標的物。然而,各圖並不意欲以任何方式限制本發明或申請專利範圍之範疇。
在圖1中,繪示線1。
圖2顯示線1之截面視圖。在該截面視圖中,銅核心2係處於截面視圖中央。塗覆層3環繞銅核心2。銅核心之表面15定位於在銅線2界限上。在穿過線1之中心23的線條L上,銅核心2之直徑係顯示為線條L與表面15之交叉點間之末端距。線1之直徑為穿過中心23之線條L與線1之外部界限之交叉點間的末端距。此外,繪示塗覆層3之厚度。
圖3顯示用於製造本發明線之製程。
圖4繪示包含兩個元件11及線1之電器件10。線1電連接兩個元件11。虛線意指連接元件11與包圍元件11之封裝器件之外部配線之其他連接或電路。元件11可包含接合墊、積體電路、LED或諸如此類。
圖5顯示線牽拉測試之草圖。將線1以45°之角19接合至基板20上之接合21中。牽拉鉤17牽拉線1。當牽拉鉤17牽拉線1時所形成之角22為90°。
1‧‧‧線
2‧‧‧銅核心
3‧‧‧塗覆層
15‧‧‧表面
23‧‧‧中心
L‧‧‧線條
Claims (20)
- 一種接合線,其包含:具有表面之核心(2),其中該核心(2)包含銅作為主要組份,及疊加於該核心(2)之該表面(15)上之塗覆層(3),其中該塗覆層(3)包含鈀作為主要組份,其中該核心(2)包含銀及磷作為其他組份,其中該核心(2)之銀含量與磷含量之間之比係在0.03至2之範圍內。
- 如請求項1之線,其中該磷含量係在20ppm至300ppm範圍內。
- 如前述請求項中任一項之線,其中該銀含量為至少5ppm。
- 如前述請求項中任一項之線,其中該銀含量係在5ppm至1000ppm範圍內。
- 如前述請求項中任一項之線,其中該核心(2)之銅含量為至少99.98%。
- 如前述請求項中任一項之線,其中該塗覆層(3)具有小於0.5μm之厚度。
- 如前述請求項中任一項之線,其中該塗覆層(3)之鈀含量為至少95%。
- 如前述請求項中任一項之線,其中該線(1)具有在8μm至80μm範圍內之直徑。
- 如前述請求項中任一項之線,其中該線(1)之伸長率與該線(1)之直徑之比係在0.25%/μm至0.75%/μm範圍內。
- 如前述請求項中任一項之線,其中該線滿足關係0.0008<E/(d*CP)<0.0375,其中E係以%量測之該線(1)之伸 長率,d係以μm量測之該線之直徑,且CP係以ppm量測之該線核心(2)之該磷含量。
- 如前述請求項中任一項之線,其中該線滿足關係0.000025<E/(d*CAg)<0.15,其中E係以%量測之該線之伸長率,d係以μm量測之該線之直徑,且CAg係以ppm量測之該線核心(2)之該銀含量。
- 如前述請求項中任一項之線,其中該線(1)已在退火步驟中經至少370℃之溫度處理。
- 如前述請求項中任一項之線,其中該線核心(2)之硬度不大於120.00 Hv0.5。
- 如前述請求項中任一項之線,其中該線(1)之比電阻係在1.8μOhm*cm至1.9μOhm*cm範圍內。
- 一種用於接合電子器件之系統,其包含第一接合墊(11)、第二接合墊(11)及如前述請求項中任一項之線(1),其中該線(1)係藉助楔接合與該等接合墊(11)中之至少一者連接。
- 如請求項15之系統,其中該線(1)係藉助楔接合與兩個接合墊(11)連接。
- 如請求項15或16之系統,其中在將20μm直徑之線與金接合墊接合之情形下,該至少一個楔接合之製程窗口面積具有至少3500mA*g之值。
- 如請求項15至17中任一項之系統,其中該等接合墊(11)中之一者之基礎結構包含至少一個多孔二氧化矽層。
- 一種用於連接電器件之方法,其包含以下步驟:a.提供如請求項1至14中任一項之線(1);b.藉助球接合或楔接合將該線(1)與該器件之第一接合墊(11)接合;及 c.藉助楔接合將該線(1)與該器件之第二接合墊(11)接合;其中在不使用形成氣體之情況下實施步驟b及c。
- 一種用於製造如請求項1至14中任一項之接合線之方法,其包含以下步驟:a.提供具有所要求含量之磷及銀之銅核心前體;b.拉製該前體直至達到該線核心(2)之最終直徑為止;c.在拉製該前體之該步驟b之前或之後利用塗覆層(3)之材料塗覆該銅核心(2);d.使該經塗覆及拉製之線(1)在一定溫度下退火一段最少退火時間。
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JP4904252B2 (ja) * | 2007-12-03 | 2012-03-28 | 新日鉄マテリアルズ株式会社 | 半導体装置用ボンディングワイヤ |
US8125091B2 (en) * | 2008-03-18 | 2012-02-28 | Lsi Corporation | Wire bonding over active circuits |
JP2010245390A (ja) * | 2009-04-08 | 2010-10-28 | Tatsuta Electric Wire & Cable Co Ltd | ボンディングワイヤ |
KR101251011B1 (ko) * | 2011-08-23 | 2013-04-05 | 엠케이전자 주식회사 | 구리계 본딩 와이어 및 이를 포함하는 반도체 패키지 |
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WO2014137287A1 (en) | 2014-09-12 |
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