TWI731234B - 球焊用之貴金屬被覆銀線及其製造方法、及使用球焊用之貴金屬被覆銀線的半導體裝置及其製造方法 - Google Patents

球焊用之貴金屬被覆銀線及其製造方法、及使用球焊用之貴金屬被覆銀線的半導體裝置及其製造方法 Download PDF

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TWI731234B
TWI731234B TW107113452A TW107113452A TWI731234B TW I731234 B TWI731234 B TW I731234B TW 107113452 A TW107113452 A TW 107113452A TW 107113452 A TW107113452 A TW 107113452A TW I731234 B TWI731234 B TW I731234B
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mass
wire
palladium
gold
precious metal
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TW107113452A
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TW201942988A (zh
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千葉淳
安徳優希
川野将太
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日商田中電子工業股份有限公司
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Abstract

[課題]本發明之目的在於提供一種貴金屬被覆銀接合線，其在以接合線將半導體晶片的電極與引線框架等的電極連接的半導體裝置中，即使在汽車等嚴苛的高溫高濕條件下亦可抑制接合界面的腐蝕，而避免發生導電不良。又，本發明之目的在於提供一種可在大氣中進行球焊的貴金屬被覆銀接合線。 [解決手段]本發明的球焊用之貴金屬被覆銀線，係在由純銀或銀合金所構成的芯材上具備貴金屬被覆層的貴金屬被覆銀線，其特徵為：線材包含至少1種硫族元素，貴金屬被覆層具備鈀中間層及金表皮層，鈀相對於線材整體的含量為0.01質量%以上5.0質量%以下，金相對於線材整體的含量為1.0質量%以上6.0質量%以下，且硫族元素相對於線材整體的含量為0.1質量ppm以上100質量ppm以下。

Description

球焊用之貴金屬被覆銀線及其製造方法、及使用球焊用之貴金屬被覆銀線的半導體裝置及其製造方法
本發明係關於一種在以接合線將半導體裝置內之半導體晶片的電極與引線框架等的電極連接的半導體裝置中較佳的球焊用之貴金屬被覆銀線及其製造方法、及使用該線材的半導體裝置及其製造方法。
以往，作為將半導體裝置內之半導體晶片的電極與外部引線等連接的球焊線材，係使用金線、銅線、被覆銅線、及銀線。球焊線材藉由放電使其線材的一端熔融，並利用表面張力變成球形而凝固。凝固之球體稱為焊球(FAB；free air ball)，藉由超音波併用熱壓接合法與半導體晶片的電極連接，另一端則與印刷基板或引線框架等的電極連接。接著，連接之接合線被樹脂密封而成為半導體裝置。
以往的接合線之金線的材料成本高，銅線或被覆銅線則具有材料堅硬而會對半導體晶片造成損傷的課題。又，銀線成本低且柔軟而適合作為接合線，但純銀線若在大氣中長期放置其表面會硫化，銀合金線則因鈀或金與純銀合金化而會發生電阻率變高這樣的問題。
於是，為了解決上述課題，考量在銀線的表面被覆鈀等鉑族金屬的被覆銀接合線。然而，被覆銀接合線雖解決接合線表面硫化的問題，但在汽車等高溫高濕的嚴苛環境下使用，相較於金線，並無法滿足接合可靠度。
例如，日本特開2013-033811號公報(下述專利文獻1)中提出一種鈀被覆銀接合線。該公報的第四圖(a)及(b)的顯微鏡影像顯示了FAB表面無鈀層溶解殘留部分的正球狀焊球。該公報的申請專利範圍第1項中記載了「一種球焊線材，其係用以藉由球焊法將半導體元件的電極(a)與電路配線基板的導體配線(c)連接的接合線(W)，其特徵為：在由Ag所構成之芯材(1)外周面形成Pt或Pd的被覆層(2)，並使該被覆層(2)之剖面積(At)與該線材(W)之剖面積(A)的比值(At/A×100)為0.1~0.6%」。
再者，該公報的第0021段中記載了「製作FAB時，在線材前端部與放電棒g之間放電以使線材前端熔融時，熔點高於Ag的Au、Pt或Pd會堆積於FAB表面，故FAB(焊球b)表面變成Au、Pt或Pd的高濃度層，在該圖(b)中接下來的第一次（1st）接合時，有助於與電極a之接合界面的高可靠度化」。然而，Pt或Pd的被覆層會熔入FAB內部，因此即使添加至芯材的Au、Pt或Pd堆積於FAB表面而變成高濃度層，該高濃度層亦無法確保高溫高濕下接合界面的長期可靠度。
於是，日本特開2016-115875號公報(下述專利文獻2)的申請專利範圍4中揭示了「一種半導體裝置用接合線，其特徵為：該被覆層的最表面具有包含15~50at.%之Au的含Au區域，該含Au區域的厚度為0.001~0.050μm」…(中略)…「一種半導體裝置用接合線，其特徵為包含芯材與形成於該芯材表面的被覆層；該芯材包含總計0.1~3.0at.%的Ga、In及Sn之1種以上，剩餘部分由Ag及不可避免的雜質所構成；該被覆層包含Pd及Pt之1種以上、或Pd及Pt之1種以上與Ag，剩餘部分由不可避免的雜質所構成；該被覆層的厚度為0.005~0.070μm」。然而，若於芯材中添加Ga、In及Sn，則發生接合線本身的電阻率上升的問題，而無法滿足作為鈀被覆銀接合線。
又，除了上述各問題以外，若銀接合線在大氣中形成熔融焊球，則熔融銀球吸收大氣中的氧，在凝固時釋放吸收之氧，結果出現FAB表面產生表皮粗糙的現象(噴渣(spitting)現象)。因此，在熱壓接至半導體晶片之電極的鋁墊時，鋁墊與FAB的接合界面變得不易接合，銀接合線不得不在不活潑氣體環境或還原性氣體環境下進行球焊，而無法在大氣中進行球焊。 [先前技術文獻] [專利文獻]
[專利文獻1]日本特開2013-033811號公報 [專利文獻2]日本特開2016-115875號公報
[發明所欲解決之課題]
在以接合線將半導體晶片的電極與引線框架等的電極連接的半導體裝置中，若將球焊用之貴金屬被覆銀線與半導體晶片之電極的鋁墊進行球焊，則在接合界面形成容易被腐蝕的銀與鋁之金屬間化合物。該金屬間化合物容易被腐蝕，故隨著時間甚至會腐蝕至接合界面的內部，最終在鋁墊與接合線之間生成腐蝕層而導致導電不良。於是，本發明之目的在於提供一種即使在汽車等嚴苛的高溫高濕條件下亦可抑制接合界面的腐蝕，而避免發生導電不良的貴金屬被覆銀接合線。再者，本發明之目的在於提供一種可在大氣中進行球焊的貴金屬被覆銀接合線。 [解決課題之手段]
本發明的球焊用之貴金屬被覆銀線，係在由純銀或銀合金所構成的芯材上具備貴金屬被覆層的貴金屬被覆銀線，其特徵為：線材包含至少1種硫族元素，貴金屬被覆層具備鈀中間層及金表皮層，鈀相對於線材整體的含量為0.01質量%以上5.0質量%以下，金相對於線材整體的含量為1.0質量%以上6.0質量%以下，且硫族元素相對於線材整體的含量為0.1質量ppm以上100質量ppm以下。
本發明的球焊用之貴金屬被覆銀線的製造方法，係製造在由純銀或銀合金所構成的芯材上具備貴金屬被覆層之貴金屬被覆銀線的方法，其特徵為：線材包含至少1種硫族元素，貴金屬被覆層具備鈀中間層及金表皮層，鈀相對於線材整體的含量為0.01質量%以上5.0質量%以下，金相對於線材整體的含量為1.0質量%以上6.0質量%以下，且硫族元素相對於線材整體的含量為0.1質量ppm以上100質量ppm以下。
本發明的使用球焊用之貴金屬被覆銀線的半導體裝置，係具備至少1個半導體晶片、引線框架或基板，且以球焊用之貴金屬被覆銀線將半導體晶片的電極與引線框架的電極、或半導體晶片的電極與基板的電極、或複數半導體晶片的電極之間連接的半導體裝置，其特徵為：球焊用之貴金屬被覆銀線在由純銀或銀合金所構成的芯材上具備貴金屬被覆層，線材包含至少1種硫族元素，貴金屬被覆層具備鈀中間層及金表皮層，鈀相對於線材整體的含量為0.01質量%以上5.0質量%以下，金相對於線材整體的含量為1.0質量%以上6.0質量%以下，且硫族元素相對於線材整體的含量為0.1質量ppm以上100質量ppm以下。
本發明的使用球焊用之貴金屬被覆銀線的半導體裝置之製造方法，係具備至少1個半導體晶片、引線框架或基板，且以球焊用之貴金屬被覆銀線將半導體晶片的電極與引線框架的電極、或半導體晶片的電極與基板的電極、或複數半導體晶片的電極之間連接的半導體裝置之製造方法，其特徵為：球焊用之貴金屬被覆銀線在由純銀或銀合金所構成的芯材上具備貴金屬被覆層，線材包含至少1種硫族元素，貴金屬被覆層具備鈀中間層及金表皮層，鈀相對於線材整體的含量為0.01質量%以上5.0質量%以下，金相對於線材整體的含量為1.0質量%以上6.0質量%以下，且硫族元素相對於線材整體的含量為0.1質量ppm以上100質量ppm以下。 [發明之效果]
本發明可提供一種貴金屬被覆銀接合線，其在以接合線將半導體晶片的電極與引線框架等的電極連接的半導體裝置中，即使在汽車等嚴苛的高溫高濕條件下亦可抑制接合界面的腐蝕，而避免發生導電不良。再者，本發明可使熔融銀球不再從大氣中吸收氧，不管芯材是純度99.9質量%以上的純銀還是銀合金，皆可在大氣下進行接合作業。因此，可直接使用以往的金線接合裝置，而可提供貴金屬被覆銀線作為金接合線的代替品。
以下對本發明之實施形態進行說明。以下所示的實施形態，係用於將本發明之技術思想具體化，本發明並不限定於以下的例示。
本發明藉由使貴金屬被覆層中含有熔點低於貴金屬被覆層的金及鈀、且與銀的反應性高的硫族元素，在球焊時可使金鈀分布層穩定殘留於FAB表面。亦即，在FAB與鋁墊的接合界面中存在金鈀分布層，藉此可抑制長期在水分或鹵素離子的影響下發生的腐蝕所導致的電阻上升，亦即導電不良。此外，硫族元素係指硫(S)、硒(Se)及碲(Te)。
硫族元素的熔點分別為：硫(S)113℃、硒(Se)220℃及碲(Te)450℃，比銀的熔點962℃更低。又，硫族元素的熔點，比貴金屬被覆層的鈀的熔點1,552℃及金的熔點1,064℃更低。
本發明之特徵的機制雖未完全明朗，但推測其特徵係在於熔融焊球的形成過程，因此順著時序說明形成FAB的製程。最初，隨著將接合線加熱，熔點最低的貴金屬被覆層內之硫族元素變成熔融狀態。硫族元素容易與芯材的銀反應，故熔融狀態的硫族元素被銀吸引。接著，熔點低的芯材之銀熔融，從小焊球成長成大焊球。此時，在芯材的銀與貴金屬被覆層的鈀的界面中，芯材最表層面的銀與硫族元素反應而形成硫族化銀(例如硫化銀等)，該等硫族化銀覆蓋芯材的銀之最表層面的周圍。該等硫族化銀在芯材的銀與貴金屬被覆層的鈀之間發揮屏障效果，即使加熱溫度上升至金及鈀的熔點，亦可抑制貴金屬被覆層的金及鈀熔入芯材的銀。因貴金屬被覆層的鈀之一部分與芯材表面的銀合金化，雖未完全分離，但在FAB表面形成鈀或鈀-銀合金，或是鈀與鈀-銀合金兩者，該等成分覆蓋在FAB表面上。另一方面，金具有不易在鈀中擴散的性質，故貴金屬被覆層的金表皮層停留在鈀中間層上。接著，在金表皮層與鈀中間層的界面一部分合金化，金表皮層追隨鈀中間層的動作。將該層稱為金鈀分布層，該金鈀分布層進一步覆蓋FAB的表面。將形成有金鈀分布層的FAB之剖面進行面分析的結果顯示於第一圖。
以例如電子微探儀(EPMA；electron probe micro analyzer)對於將FAB中心部從線材頸部往焊球前端部裁切的面進行面分析，藉此可確認FAB表面的金鈀分布層。面分析係量測在樣品的一定範圍內元素分布的方法，係從視覺上可了解各元素分布的分析方法。第一圖係藉由EPMA對FAB剖面的鈀分布進行面分析的結果。看起來白色的部分顯示金及鈀的分布，可知FAB表面形成有金鈀分布層。又，EPMA難以量測的薄金鈀分布層，雖無法進行視覺上的面分析，但可藉由以歐傑電子光譜法(AES；auger electron spectroscopy)從FAB表面往芯材進行深度分析以確認形成有金鈀分布層。另外亦可藉由穿透式電子顯微鏡(TEM；transmission electron microscope)附屬的能量色散型X射線分析(EDX；energy dispersive x-ray spectrometry)等確認鈀分布層。如上述，將FAB表面分布有金及鈀定義為金鈀分布層。
金鈀分布層覆蓋FAB表面係解決本課題的條件。金鈀分布層抑制大氣中氧的穿透，故可防止熔融銀球吸收氧。為此，FAB凝固時不會釋放氧，故不會發生噴渣現象。再者，藉由覆蓋FAB表面，在與鋁墊的接合界面一定存在金鈀分布層，而可抑制因接合界面作為原因的腐蝕所引起的電阻上升，亦即導電不良。第二圖中金及鈀熔入芯材的銀，此狀態無法解決本發明的課題。
又，在本發明的球焊用之貴金屬被覆銀線中，藉由在貴金屬被覆層(特別是被覆有堅硬的鈀中間層的情況等)的最外層被覆金表皮層，憑藉金的高延展性，而可防止拉線加工中線材表面的破裂或斷線。又，由於鑽石拉線模的磨耗減少，故可實現拉線模的長壽命化，亦有助於減少加工費用。
再者，在貴金屬被覆層中，較佳係在鈀中間層的芯材面形成金中間層。因為金中間層變成緩衝墊而緩和連續拉線步驟中芯材與鈀中間層之伸長率的差異。再者，在貴金屬被覆層中，若依照金、鈀、金的順序進行被覆，則可減少連續拉線步驟中貴金屬被覆層的拉線加工不良。
再者，在本發明的球焊用之貴金屬被覆銀接合線中，若芯材使用純度99.9質量%以上的銀，則可減少線材的電阻率，故為較佳，但銀與貴金屬被覆層的材料強度、展延性及伸長率有很大的差距，而成為在拉線加工中貴金屬被覆層從芯材的銀剝離，或發生斷線等的原因。因此可知，為了順利地進行拉線加工，若使芯材的銀含有微量的銅以提高芯材的強度，則貴金屬被覆層與芯材的材料強度及伸長率的差距變小，拉線時的加工性變得良好。此外，藉由將金、鉑或鈀等添加至芯材中，亦可得到相同的效果。
在本發明之貴金屬被覆銀接合線中，使鈀相對於線材整體的含量為0.01質量%以上5.0質量%以下的理由如下。亦即，使鈀的下限值為0.01質量%以上，係因為小於0.01質量%則無法以金鈀分布層覆蓋FAB表面，而無法在FAB與鋁墊的接合界面抑制腐蝕。又，使鈀的上限值為5.0質量%以下，係因為若超過5.0質量%，則無法使FAB的真圓度穩定。
在本發明之貴金屬被覆銀接合線中，使金相對於線材整體的含量為1.0質量%以上6.0質量%以下的理由如下。亦即，使金的下限值為1.0質量%以上，係因為小於1.0質量%則無法防止氧從大氣中侵入熔融焊球，而無法抑制噴渣現象。又，使金的上限值為6.0質量%以下，係因為若超過6.0質量%，則無法使壓接焊球的真圓度穩定。然而，若增加金的含量則成本變高，故較佳為儘量減少。
在本發明之貴金屬被覆銀接合線中，使貴金屬被覆層含有硫族元素係因為理解，若因應貴金屬被覆層的成分組成適當存在至少1種由硫(S)、硒(Se)及碲(Te)所構成之硫族元素，則可以金鈀分布層覆蓋FAB表面。此外，雖藉由於貴金屬被覆層含有硫族元素可解決本發明之課題，但難以分析貴金屬被覆層中是否含有硫族元素，甚至是要分析貴金屬被覆層內硫族元素的含量亦非常困難，故在申請專利範圍中，硫族元素係在線材整體中的含量。
使硫族元素的下限值為0.1質量ppm以上，係因為小於0.1質量ppm則金鈀分布層無法殘留於FAB的表面。又，使硫族元素的上限值為100質量ppm以下，係因為若超過100質量ppm，則無法使球焊時球焊部的真圓度穩定。
上述芯材的銀合金較佳為含有0.005質量%以上2.0質量%以下的銅。使銅相對於線材整體的含量的下限值為0.005質量%以上，係因為小於0.005質量%則無法抑制拉線加工不良。又，使銅相對於線材整體的含量的上限值小於2.0質量%，係因為若超過2.0質量%，則電阻率上升，而且線材強度提高，拉線加工變得困難。此外，藉由使芯材的銀合金含有總計0.005質量%以上2.0質量%以下的金、鉑或鈀之至少1種亦可得到相同的效果。
此外，本發明的球焊用之貴金屬被覆銀接合線中各元素的含量，係使用感應耦合電漿原子發射光譜法(ICP-AES；inductively coupled plasma atomic emission spectroscopy)或感應耦合電漿質譜法(ICP-MS；inductively coupled plasma mass spectrometry)或輝光放電質譜法(GDMS；glow discharge mass spectrometry)、二次離子質譜法(TOF-SIMS；time-of-flight secondary ion mass spectrometry)等進行測量。
又，針對本發明的球焊用之貴金屬被覆銀接合線中積層於芯材之貴金屬被覆層的結構，可藉由以AES從接合線的表層往芯材的深度方向上進行分析而確認積層的順序。又，以機械研磨或聚焦離子束裝置(FIB；focused ion beam system)裁切出接合線的剖面，再以掃描式電子顯微鏡(SEM；scanning electron microscope)附屬的EDX、EPMA或TEM附屬的EDX進行表面部分之元素的線分析或多處的點分析亦可確認各元素的積層或配置。
此處，本發明中貴金屬被覆層的貴金屬元素、鈀中間層的鈀元素、金表皮層及金中間層的金元素，在各層中亦可無100質量%之部分且其係被合金化的情況，貴金屬被覆層、鈀中間層、金表皮層及金中間層被定義包含這種情況。 (製造方法)
接著，說明本發明的球焊用之貴金屬被覆銀接合線的製造方法。此外，實施形態中球焊用之貴金屬被覆銀接合線的製造方法並無特別限定於以下所述。 (芯材)
用於接合線之芯材的純銀或銀合金，可藉由將原料同時溶解而製造。溶解可使用電弧加熱爐、高頻加熱爐、電阻加熱爐等，較佳為使用連續鑄造爐。其順序如下。於碳坩堝中裝載預先秤量的原料，在真空或是氮氣或氬氣等不活潑氣體環境下使其加熱溶解後進行冷卻。藉由將所得到之純銀或銀合金的鑄錠重複進行輥軋加工或使用拉線模的拉拔加工、連續拉線加工，以使其細線化至最終線徑。 (貴金屬被覆層)
形成貴金屬被覆層的方法具有：於最終線徑的銀線上形成貴金屬被覆層的方法；或是於連續鑄造而成的銀線或中間線徑的銀線上形成貴金屬被覆層後，進行連續拉線以加工成最終線徑的方法。
於芯材的銀線表面上形成貴金屬被覆層的方法，可使用濕式鍍覆、乾式鍍覆法、熔融法等。濕式鍍覆法可以電鍍法、無電鍍敷法等進行製造。亦可組合被稱為擊噴鍍(strike plating)、閃鍍的電鍍法。亦可使用用於無電鍍敷的溶液為取代型、還原型、自溶型之任一種的方法。形成厚貴金屬被覆層的情況下，亦可在取代型鍍覆後併用自溶型鍍覆。乾式鍍覆法可使用：濺射法、離子鍍法、真空蒸鍍等的物理吸附法；或電漿化學氣相沉積(CVD；chemical vapor deposition)等的化學吸附。該等皆為乾式，故無需像濕式鍍覆法般在形成貴金屬被覆層後進行清洗，而沒有清洗時的表面汙染等的疑慮。
對形成上述銀線的方法進行具體說明。對於藉由溶解鑄造所得到的直徑3mm以上10mm以下的圓柱狀銀合金，進行拉拔加工以拉線至直徑1.2mm以上2.0mm以下。之後，使用拉線模連續進行拉線加工，藉此製作直徑300μm以上600μm以下的線材。亦可藉由連續鑄造進行該等步驟。
對上述在銀線上形成貴金屬被覆層的方法進行具體說明。可藉由濕式鍍覆形成貴金屬被覆層。於鈀中間層的鈀電鍍浴中添加作為結晶調整劑的硫(S)化合物、硒(Se)化合物或碲(Te)化合物進行調整。又，設置金表皮層的情況下，係使用金電鍍浴。之後，重複進行拉線加工以拉線至最終線徑的直徑12μm以上60μm以下、較佳為直徑15μm以上35μm以下，並進行最終熱處理。
若一邊將最終線徑的貴金屬被覆銀線連續拉線一邊進行最終熱處理，則可得到高生產性，故為有效。具體而言，具有下述方法：使最終線徑的貴金屬被覆銀線連續通過設定在適當溫度之電爐中的方法，或在將最終線徑的貴金屬被覆銀線捲繞成捲線等的狀態下，於設定在適當溫度之烘箱中放置一定時間的方法。
若使用以本發明之實施形態所記載的製造方法製造的球焊用之貴金屬被覆銀接合線進行球焊，則可發揮在FAB表面形成金鈀分布層，而可抑制因在鋁墊與接合線之間生成的金屬間化合物之腐蝕而發生的導電不良，這樣優異的特性。再者，藉由使用本發明的球焊用之貴金屬被覆銀接合線，可實現比以往的半導體裝置更高壽命的半導體裝置。
針對本發明之一實施形態的半導體裝置及其製造方法，參照第三圖說明其代表例。 以貴金屬被覆銀接合線4將半導體晶片2與引線框架3接合後，為了保護貴金屬被覆銀接合線4及接合部，以陶瓷或模製樹脂等進行密封。之後，使外部引線形成既定的形狀。最後經由電特性檢査及外觀檢査等的產品檢査、以及環境試驗及壽命試驗等的可靠度檢査形成半導體裝置1。
接著參照第四圖對本發明之另一實施形態的半導體裝置之內部的結構進行說明。 於基板5配置複數的半導體晶片2，以貴金屬被覆銀線4將基板5的電極6與半導體晶片2的電極(圖中未顯示)、半導體晶片2的電極(圖中未顯示)與半導體晶片2的電極(圖中未顯示)進行電性接合。此外，以貴金屬被覆銀線4進行電接合的半導體晶片2之電極，亦包含與在半導體晶片2上之電極預先接合的凸塊(圖中未顯示)。半導體裝置，具體而言係具有：邏輯IC、類比IC、離散半導體、記憶體、光學半導體等。
以下顯示實施例及比較例進一步說明本發明，但本發明只要不脫離其主旨即可，並不限定於以下實施例。 [實施例]
首先，對實施例進行說明。芯材使用純度為99.9質量%以上的銀，貴金屬被覆層使用金及鈀。使用的方法為在將貴金屬被覆層積層至中間線徑的銀線上後，進行連續拉線以加工至最終線徑。於芯材的表面形成貴金屬被覆層的方法，係使用一邊連續地運送線材一邊浸漬於鍍覆浴的電鍍法。之後，對加工至最終線徑的接合線進行最終熱處理，製作從實施例1至實施例20的接合線。
接著，製作之接合線，在不使用氣體的情況下使用市售的接合裝置(K&S ICONN)以形成FAB，並藉由超音波併用熱壓接方式的球焊法，與加熱至200℃之評估用Si晶片上的鋁合金墊片進行第一次接合，在由42合金所構成之引線框架(200pin)上經實施鍍銀的引線之間，藉由以超音波併用熱壓接方式所進行的訂合式接合法進行第二次接合，將共計200條的線材接線。之後，進行各種評估。 (接合評估)
噴渣的影響，會導致在熱壓接至半導體晶片之電極（即鋁墊）的第一次接合中出現接合不良，故進行第一次接合的接合評估。首先，作為接合評估，在第一次接合時，藉由NSOP(non stick on pad)檢測，將無法連續進行球焊者視為「×」(不合格)。接著，使用dage公司製的萬能黏接測試機(型號BT-4000)，將可連續進行球焊者在線圈總長度的第一次接合側5分之1附近掛上拉鉤，以200條接線之中的20條線材進行拉拔評估。第一次接合評估，係只要有1條發生壓接焊球剝離(從鋁墊剝離)的情況即視為「×」(不合格)，而將20條皆在壓接焊球剝離以外的情況下斷裂的情況視為「○」(合格)。其結果顯示於表1。表1係實施貴金屬被覆銀線者。實施例之接合評估，如表1所示皆為「○」(合格)。 (真圓度的評估)
壓接焊球的真圓度，係將接合線接合裝置的壓接焊球徑的縱向(施加超音波的方向)作為Y，將横向(與施加超音波正交的方向)作為X，以其比值((即Y/X)進行評估。設定評估基準係：「○」(合格)為0.8~1.2、「×」(不合格)為0.79以下及1.21以上。然而，即使真圓度為「○」(合格)，但關於具有偏芯現象的線材，真圓度的評估仍為「×」(不合格)。所謂的偏芯現象係指壓接焊球形狀形成相對於線材軸不對稱的現象，偏芯越大則越容易因與鄰接之焊球接觸而引起短路不良。又，偏芯亦可能引起接合強度不足。此外，經接合的實施例之線材的壓接焊球形狀，真圓度的評估如表1所示皆為「○」(合格)。
之後，以市售的環氧系樹脂將與鋁合金墊片接合的球焊線材密封，並測量電阻。電阻係使用KEITHLEY公司製的「Source Meter(型號2004)」，以專用的IC插槽及專門建置的自動測量系統進行測量，從探針往鄰接之外部引線之間(選擇半導體晶片上的墊片短路的成對引線)流通固定電流，使用測量探針之間電壓的直流四端子法進行測量。 (HAST可靠度評估)
接著，進行高加速壽命試驗(HAST；highly accelerated temperature and humidity stress test)。將上述所製作之線材放入HAST裝置內，在溫度130℃、相對濕度85%、2氣壓的氣體環境下放置192小時的方法，進行HAST可靠度評估。之後進行電阻測量，以與試驗前之電阻的上升率進行評估。選擇此評估方法的理由如下：因在線材的鋁接合界面所生成的銀與鋁之金屬間化合物的腐蝕，而發生在接合界面生成腐蝕層的狀況，因此接合面積變小、導電性變差，進而導致電阻上升。因此，測量在HAST前後線材的電阻上升率，適合作為用以解決課題的評估方法。
結果顯示於表1中，將在HAST前後鄰接的100對外部引線之間的電阻上升率之平均值為20%以下的線材視為「○」(合格)，將超過20%的線材視為「×」(不合格)。此外，實施例之線材的HAST後的電阻相較於HAST前的電阻，上升率的平均值皆在20%以下。
之後，以SEM附屬的EDX對評估用晶片上的鋁合金墊片與線材之接合界面的剖面進行分析，結果在接合界面檢測出鈀。該檢測出的鈀，係源自第一圖所示的形成於FAB表面的金鈀分布層。亦即，係因為藉由覆蓋在FAB表面的金鈀分布層與鋁合金墊片接合，而得以抑制銀-鋁金屬間化合物的生成，或金鈀分布層抑制水分或氯對金屬間化合物的腐蝕，而有助於抑制電阻上升。 [比較例]
以與實施例相同的方法製作比較例的貴金屬被覆銀線。比較例的接合線與實施例相同地不使用氣體來形成FAB，比較例21到比較例28的接合評估皆為「○」(合格)，但從比較例29到比較例40皆出現未黏結或接合不良，故接合評估為「×」(不合格)。由該結果可知，在不使用氣體的情況下，接合性係歸因於金的含量(質量%)。再者，在比較例23、24、26及27中，形成扭曲的偏芯焊球，故真圓度的評估為「×」(不合格)。由該結果可知，真圓度係歸因於鈀的含量(質量%)及硫族元素的含量(質量%)。此外，在接合評估中「×」(不合格)的接合線，不實施真圓度評估及HAST可靠度評估，故在表1中為「-」(未實施)。又，在真圓度評估中「×」(不合格)的接合線，不實施HAST可靠度評估，故在表1為「-」(未實施)。
比較例21、22、25及28雖通過真圓度的評估，但HAST後電阻的上升率相較於HAST前超過20%，故為「×」(不合格)。以SEM附屬的EDX將評估用晶片上的鋁合金墊片與接合線之接合界面的剖面進行分析，結果接合界面未檢測出鈀。由該結果可知，為了在接合界面檢測出鈀，亦即以金鈀分布層覆蓋FAB表面，係受鈀的含量(質量%)及硫族元素的添加量所影響。又可知，在接合界面有無鈀，係解決本發明之課題的關鍵。
【表1】
Figure 107113452-A0304-0001
由上述實施例及比較例的結果可知，評估用晶片上的鋁合金墊片與接合線的接合界面是否存在鈀，大幅影響接合線的導電性（即接合壽命）。該接合界面的鈀，係來自第一圖所示的形成於FAB表面的金鈀分布層。
如上所述，藉由使金鈀分布層穩定殘留於FAB表面，可提供一種貴金屬被覆銀接合線，其即使在汽車等嚴苛的高溫高濕的條件下亦可抑制接合界面產生的腐蝕所導致的電阻上升（即導電不良）。
又，本發明的球焊用之貴金屬被覆銀線，由於可發揮得以抑制因鋁墊與接合線之間生成的金屬間化合物之腐蝕而發生的導電不良這樣優異的特性，故藉由將本發明的球焊用之貴金屬被覆銀接合線用於半導體裝置，可提供比以往的半導體裝置更高壽命的半導體裝置。 [產業上的可利用性]
本發明的球焊用之貴金屬被覆銀合金線，取代以往的金線及鈀被覆銀線，即使在高濕高溫的條件下亦可抑制電阻上升，除了邏輯IC、類比IC、離散半導體、記憶體以外，亦具有光學半導體等的各種用途。
1‧‧‧半導體裝置2‧‧‧半導體晶片3‧‧‧引線框架4‧‧‧貴金屬被覆銀線5‧‧‧基板6‧‧‧電極
第一圖係形成有金鈀分布層之FAB的剖面圖。 第二圖係未形成金鈀分布層之FAB的剖面圖。 第三圖係本發明之一實施形態的半導體裝置的結構圖。 第四圖係本發明之另一實施形態的半導體裝置之內部的結構圖。

Claims (12)

  1. 一種球焊用之貴金屬被覆銀線，其係在由純銀或銀合金所構成的芯材上具備貴金屬被覆層的貴金屬被覆銀線，其特徵為：線材包含至少1種硫族元素，貴金屬被覆層具備鈀中間層及金表皮層，鈀相對於線材整體的含量為0.01質量%以上5.0質量%以下，金相對於線材整體的含量為1.0質量%以上6.0質量%以下，且硫族元素相對於線材整體的含量為3質量ppm以上100質量ppm以下。
  2. 如申請專利範圍第1項之球焊用之貴金屬被覆銀線，其中在該貴金屬被覆層中，鈀中間層的芯材面具備金中間層。
  3. 如申請專利範圍第1項之球焊用之貴金屬被覆銀線，其中該芯材包含銅，且銅相對於線材整體的含量為0.005質量%以上2.0質量%以下。
  4. 一種球焊用之貴金屬被覆銀線的製造方法，其係製造在由純銀或銀合金所構成的芯材上具備貴金屬被覆層之貴金屬被覆銀線的方法，其特徵為：線材包含至少1種硫族元素，貴金屬被覆層具備鈀中間層及金表皮層，鈀相對於線材整體的含量為0.01質量%以上5.0質量%以下，金相對於線材整體的含量為1.0質量%以上6.0質量%以下，且硫族元素相對於線材整體的含量為3質量ppm以上100質量ppm以下。
  5. 如申請專利範圍第4項之球焊用之貴金屬被覆銀線的製造方法，其中在該貴金屬被覆層中，鈀中間層的芯材面具備金中間層。
  6. 如申請專利範圍第4項之球焊用之貴金屬被覆銀線的製造方法，其中該芯材包含銅，銅相對於線材整體的含量為0.005質量%以上2.0質量%以下。
  7. 一種半導體裝置，其係具備至少1個半導體晶片、引線框架或基板，且以球焊用之貴金屬被覆銀線將半導體晶片的電極與引線框架的電極、或半 導體晶片的電極與基板的電極、或複數半導體晶片的電極之間連接的半導體裝置，其特徵為：球焊用之貴金屬被覆銀線在由純銀或銀合金所構成的芯材上具備貴金屬被覆層，線材包含至少1種硫族元素，貴金屬被覆層具備鈀中間層及金表皮層，鈀相對於線材整體的含量為0.01質量%以上5.0質量%以下，金相對於線材整體的含量為1.0質量%以上6.0質量%以下，且硫族元素相對於線材整體的含量為3質量ppm以上100質量ppm以下。
  8. 如申請專利範圍第7項之半導體裝置，其具有在該貴金屬被覆層中，鈀中間層的芯材面具備金中間層的球焊用之貴金屬被覆銀線。
  9. 如申請專利範圍第7項之半導體裝置，其具有該芯材包含銅、且銅相對於線材整體的含量為0.005質量%以上2.0質量%以下的球焊用之貴金屬被覆銀線。
  10. 一種半導體裝置之製造方法，其係具備至少1個半導體晶片、引線框架或基板，且以球焊用之貴金屬被覆銀線將半導體晶片的電極與引線框架的電極、或半導體晶片的電極與基板的電極、或複數半導體晶片的電極之間連接的半導體裝置之製造方法，其特徵為：球焊用之貴金屬被覆銀線在由純銀或銀合金所構成的芯材上具備貴金屬被覆層，線材包含至少1種硫族元素，貴金屬被覆層具備鈀中間層及金表皮層，鈀相對於線材整體的含量為0.01質量%以上5.0質量%以下，金相對於線材整體的含量為1.0質量%以上6.0質量%以下，且硫族元素相對於線材整體的含量為3質量ppm以上100質量ppm以下。
  11. 如申請專利範圍第10項之半導體裝置之製造方法，其具有在該貴金屬被覆層中，鈀中間層的芯材面具備金中間層的球焊用之貴金屬被覆銀線。
  12. 如申請專利範圍第10項之半導體裝置之製造方法，其具有該芯材包含銅、且銅相對於線材整體的含量為0.005質量%以上2.0質量%以下的球焊用之貴金屬被覆銀線。
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TW201942988A (zh) 2019-11-01
KR102425333B1 (ko) 2022-07-26
SG11202009827QA (en) 2020-11-27
US11456271B2 (en) 2022-09-27
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