TWI722593B - 用於電連接電子組件之接觸表面的方法 - Google Patents

用於電連接電子組件之接觸表面的方法 Download PDF

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TWI722593B
TWI722593B TW108136266A TW108136266A TWI722593B TW I722593 B TWI722593 B TW I722593B TW 108136266 A TW108136266 A TW 108136266A TW 108136266 A TW108136266 A TW 108136266A TW I722593 B TWI722593 B TW I722593B
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silver
wire
range
bonding
contact surface
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TW108136266A
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TW202025321A (zh
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欣媚 潘
慕瑞利 薩蘭蓋帕尼
兮 張
康一太
愛比托 達尼拉 拜爾拉斯
錦輝 張
燕暉 彭
志偉 卓
金泰燁
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新加坡商新加坡賀利氏材料私人有限公司
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Abstract

本發明係關於一種用於電連接第一電子組件之接觸表面與第二電子組件之接觸表面的方法,其包含以下連續步驟: (1) 將具有平均直徑在8至80 µm範圍內之環狀截面的導線毛細管楔型接合至該第一電子組件之接觸表面, (2) 抬升毛細管楔型接合導線以在步驟(1)中所形成之毛細管楔型接合件與該第二電子組件之接觸表面之間形成導線環,及 (3) 將該導線針腳式接合至該第二電子組件之接觸表面, 其中該導線包含具有表面的線芯,該線芯具有疊置於其表面上之雙層塗層, 其中該線芯本身係由選自由以下組成之群的材料組成:純銀、銀含量>99.5 wt%之摻雜式銀及銀含量為至少89 wt%之銀合金,及 其中該雙層塗層係由1至50 nm厚之鎳或鈀內層及鄰接之5至200 nm厚之金外層構成。

Description

用於電連接電子組件之接觸表面的方法
本發明係關於一種用於電連接電子組件之接觸表面的方法,其係藉由包含銀或基於銀之芯及疊置於該芯之表面上之雙層塗層的經塗佈導線來進行。
線接合技術為技術人員所熟知。在線接合過程中,在第一電子組件之接觸表面上形成第一接合件,且在第二電子組件之接觸表面上形成第二接合件。兩個接合件為連接其間之接線的片件的端部。
在本文中使用術語「電子組件」。在本文中,在此情形下,術語「電子組件」應包括如電子學或微電子學領域中所用的基板及半導體。基板之實例包括引線框架、球狀柵格陣列(BGA)、印刷電路板(PCB)、可撓性電子裝置、玻璃基板、陶瓷基板(如例如直接覆鋁(DAB)或直接覆銅(DCB)基板)及絕緣金屬基板(IMS)。半導體之實例包括二極體、發光二極體(LED)、晶粒、絕緣閘雙極電晶體(IGBT)、積體電路(IC)、金屬氧化物半導體場效電晶體(MOSFET)及感測器。
在本文中使用術語「接觸表面」。其意謂電子組件之電接觸表面,接線可藉助於線接合與其連接。典型實例為半導體之接合襯墊及基板之接觸表面(例如,鍍覆細柵線、鍍覆接地)。接合襯墊可由金屬或金屬合金組成,或其可具有較薄,例如0.5至1 µm薄的特定金屬或金屬合金之頂層。其可具有例如鋁、銅、鎳、銀、金或基於此等金屬中之一者的合金的表面。接合襯墊之總厚度可為例如,0.6至4 µm,且面積可為例如20 µm × 20 µm至300 µm × 300 µm,較佳35 µm × 35 µm至125 µm × 125 µm。
接線在電子學及微電子學應用中之用途為熟知的目前先進技術。儘管一開始接線係由金製造,但如今使用較便宜之材料,諸如銅、銅合金、銀及銀合金。該等導線可具有金屬塗層。
在導線幾何結構方面,最常見的為環狀截面之接線。
技術人員熟知的常規精細線接合技術為球-楔型線接合(=簡稱「球-楔型接合」),在其過程中形成球型接合件(第1接合件)及針腳式接合件(第2接合件,楔型接合件)。
近年來,已報導精細線接合技術,在該技術中,該第一球型接合步驟經所謂的毛細管楔型接合步驟置換,參見例如,Sarangapani Murali等人所編寫之論文「Aluminum Wedge-Wedge Bonding Using Capillary and Ball Bonder」, IMAPS 2017 -第50屆國際微電子研討會(50th International symposium on Microelectronics)- Raleigh NC USA, 2017年10月9日至12日中之揭示內容。彼類型之精細線接合方法以形成毛細管楔型接合(第1楔型接合)及習知針腳式接合(第2楔型接合)為特徵。
毛細管楔型接合省略了如在球型接合中典型的在導線端部處形成線球或無空氣球(FAB)。與球型接合相比 尤其在所謂的級聯線接合方面 毛細管楔型接合會改良生產率 該級聯線接合亦通常表示為步進線接合 ( 晶粒堆疊應用中之線接合 )
US 2015/0187729 A1揭示金線、銅線及鋁線之毛細管楔型接合。
WO 2017/091144 A1揭示包含銀或基於銀之線芯的接線,該線芯具有疊置於其表面上之塗層,其中該塗層為1至1000 nm金或鈀之單層;或由1至100 nm,較佳1至20 nm厚之鎳或鈀內層及鄰接之1至200 nm,較佳1至40 nm厚之金外層構成的雙層。
申請者已發現,特定類型之銀塗佈導線或基於銀之塗佈導線出乎意料地非常適用作第1毛細管楔型/第2針腳式線接合應用中之接線;重點為第1毛細管楔型線接合步驟,亦即,已發現,在用該特定類型之銀塗佈導線或基於銀之塗佈導線進行該第1毛細管楔型線接合步驟的情況下,該步驟以出乎意料的寬毛細管楔型接合製程窗為特徵。
正如其他線接合方法,毛細管楔型接合展現出所謂的製程窗。該毛細管楔型接合製程窗會在下文進行進一步解釋。
上述特定類型之銀塗佈導線或基於銀之塗佈導線包含具有表面之線芯,該線芯具有疊置於其表面上之雙層塗層,其中該線芯本身係由選自由以下組成之群的材料組成:純銀、銀含量>99.5 wt% (重量-%、重量%)之摻雜式銀及銀含量為至少89 wt%之銀合金,且其中該雙層塗層係由1至50 nm厚之鎳或鈀內層及鄰接之5至200 nm厚之金外層構成。
因此,本發明係關於一種用於電連接第一電子組件之接觸表面與第二電子組件之接觸表面的方法,其包含以下連續步驟: (1) 將具有平均直徑在8至80 µm範圍內之環狀截面的導線毛細管楔型接合至該第一電子組件之接觸表面, (2) 抬升毛細管楔型接合導線以在步驟(1)中所形成之毛細管楔型接合件與該第二電子組件之接觸表面之間形成導線環,及 (3) 將該導線針腳式接合至該第二電子組件之接觸表面, 其中用具有在0至4度範圍內之較低面角(face angle)的陶瓷毛細管進行步驟(1)之毛細管楔型接合, 其中該導線包含具有表面的線芯,該線芯具有疊置於其表面上之雙層塗層, 其中該線芯本身係由選自由以下組成之群的材料組成:純銀、銀含量>99.5 wt%之摻雜式銀及銀含量為至少89 wt%之銀合金,及 其中該雙層塗層係由1至50 nm厚之鎳或鈀內層及鄰接之5至200 nm厚之金外層構成。
在本發明方法之步驟(1)中,將導線毛細管楔型接合至第一電子組件之接觸表面。在此步驟(1)中,採用具有在0至4度範圍內之較低面角的陶瓷毛細管作為接合工具。
陶瓷毛細管提供超音波能及壓縮力。陶瓷毛細管之實例包括氧化鋁或摻雜氧化鋯之氧化鋁之毛細管。
步驟(1)之毛細管楔型接合可用習知楔型接合設備進行,該設備之實例包括KNS接合機,如KNS-iConn接合機(Kulicke & Soffa Industries公司, Fort Washington, PA, USA);或Shinkawa接合機,如Shinkawa-UTC-5000, NeoCu接合機(日本)。
較佳地,步驟(1)之毛細管楔型接合製程參數包括(a)至(i)中之至少一者,較佳多於一者且最佳全部: (a) 在50至100 mA範圍內之超音波能, (b) 在10至30 g範圍內之力(壓縮力), (c) 在0.3至0.7 µm/s範圍內之恆定速度;恆定速度意謂導線接觸接合襯墊所處的速度 (d) 在60至70%範圍內之接觸臨限值;接觸臨限值為在偵測與接合襯墊或接觸表面之接觸時,控制接合頭之敏感性的參數,其係以接觸速度(KNS術語,亦即在採用KNS-iConn接合機之情況下)或搜尋速度(Shinkawa術語,亦即在採用Shinkawa接合機之情況下)之下降百分比量測, (e) 在25℃至175℃範圍內之接合溫度, (f) 在85至110 µm範圍內之切尾長度(Shinkawa術語,亦即在採用Shinkawa接合機之情況下), (g) 在200至500 µm範圍內之尾長延伸(KNS術語,亦即在採用KNS-iConn接合機之情況下), (h) 在-6至-12 µm範圍內之沈降量(Shinkawa術語,亦即在採用Shinkawa接合機之情況下);沈降量為控制由通過毛細管端部的超音波能及壓縮力誘發的導線之機械變形的製程參數;導線變形係以µm為單位量測為參照導線表面之向下變形,表示為負值, (i) 在0至50%範圍內之超音波斜變(KNS術語,亦即在採用KNS-iConn接合機之情況下)或超音波偏斜(Shinkawa術語,亦即在採用Shinkawa接合機之情況下)。
換言之,在用KNS-iConn接合機進行步驟(1)之情況下,較佳地,步驟(1)之毛細管楔型接合製程參數包括(a')至(g')中之至少一者,較佳多於一者且最佳全部: (a') 超音波能在50至100 mA範圍內, (b') 力在10至30 g範圍內, (c') 恆定速度在0.3至0.7 µm/s範圍內, (d') 接觸臨限值在60至70%範圍內, (e') 接合溫度在25℃至175℃範圍內, (f') 尾長延伸在200至500 µm範圍內, (g') 超音波斜變在0至50%範圍內, 而在用Shinkawa接合機進行步驟(1)之情況下,較佳地,步驟(1)之毛細管楔型接合製程參數包括(a'')至(h'')中之至少一者,較佳多於一者且最佳全部: (a'') 超音波能在50至100 mA範圍內, (b'') 力在10至30 g範圍內, (c'') 恆定速度在0.3至0.7 µm/s範圍內, (d'') 接觸臨限值在60至70%範圍內, (e'') 接合溫度在25℃至175℃範圍內, (f'') 切尾長度在85至110 µm範圍內, (g'') 沈降量在-6至-12 µm範圍內, (h'') 超音波偏斜在0至50%範圍內。
步驟(1)之毛細管楔型接合展現出所謂的毛細管楔型接合製程窗,其可由若干不同方法進行描述,其中之三者會在下文中進行解釋。
在第一方法中,毛細管楔型接合形成被視為包含施加特定壓縮力(通常以公克為單位進行量測),其藉由施加超音波能(通常以mA為單位進行量測)來支持。毛細管楔型接合製程中之施加力上限及下限之差及施加超音波能上限及下限之差的數學乘積在此可界定毛細管楔型接合製程窗: (施加力上限-施加力下限) · (施加超音波能上限-施加超音波能下限) = 毛細管楔型接合製程窗。
在第二方法中,毛細管楔型接合形成被視為包含施加特定力(通常以公克為單位進行量測),其藉由沈降量來支持。毛細管楔型接合製程中之施加力上限及下限之差及沈降量上限及下限之差的數學乘積在此可界定毛細管楔型接合製程窗: (施加力上限-施加力下限) · (沈降量上限之絕對值-沈降量下限之絕對值) = 毛細管楔型接合製程窗。
在第三方法中,毛細管楔型接合形成被視為包含施加特定力(通常以公克為單位進行量測),其藉由摩擦振幅來支持。摩擦振幅為控制毛細管端部之機械運動(圓周式、豎直式、直列式(沿線軸))的製程參數,該機械運動結果會使導線變形成薄化導線區段之馬蹄形態。摩擦振幅通常以µm為單位進行量測。毛細管楔型接合製程中之施加力上限及下限之差及摩擦振幅上限及下限之差的數學乘積在此可界定毛細管楔型接合製程窗: (施加力上限-施加力下限) · (摩擦振幅上限-摩擦振幅下限) = 毛細管楔型接合製程窗。
因此,毛細管楔型接合製程窗界定力/超音波能組合之面積;或力/沈降量組合之面積;或力/摩擦振幅組合之面積,其使得可形成符合規格,亦即通過習知測試(如習知牽拉測試)之線接合件。
對於工業應用,出於毛細管楔型接合製程穩健性之原因,期望具有寬毛細管楔型接合製程窗(以g為單位之力對以mA為單位之超音波能;或以g為單位之力對以µm為單位之沈降量;或以g為單位之力對以µm為單位之摩擦振幅)。本發明方法,或更確切地說,本發明方法之步驟(1)以出乎意料地寬毛細管楔型接合製程窗為特徵。看來導線塗層對於出乎意料的寬毛細管楔型接合製程窗為關鍵所在。
本發明方法中所用之導線為供用於微電子學中之接合的圓接線。其較佳為單件式物體。平均直徑在8至80 µm,或較佳12至55 µm,或甚至17至50 µm範圍內。
可藉由「量尺寸方法」獲得導線或線芯之平均直徑或簡言之,直徑。根據此方法,測定針對限定長度的導線之實體重量。基於此重量,使用導線材料密度計算導線或線芯直徑。直徑經計算為特定導線之五個切口上的五個量測值之算術平均值。
重要地是,導線包含具有表面之線芯,該線芯具有疊置於其表面上之雙層塗層,其中該線芯本身係由選自由以下組成之群的材料組成:純銀、銀含量>99.5 wt%之摻雜式銀及銀含量為至少89 wt%之銀合金,且其中該雙層塗層係由1至50 nm厚之鎳或鈀內層及鄰接之5至200 nm厚之金外層構成。為簡潔起見,此塗佈導線在本文中亦簡稱為「導線」。
在本文中使用術語「純銀」。其應意謂純度在99.95至100 wt%範圍內之銀。其可包含總量為至多500 wt.-ppm(重量-ppm,以重量計之ppm)之其他組分(非銀組分)。
在本文中使用術語「摻雜式銀」。其應意謂由量在>99.5至99.997 wt%範圍內之銀及總量為至多<5000 wt.-ppm,例如,30至<5000 wt.-ppm之至少一種摻雜元素組成的銀類型。其亦可包含總量為至多500 wt.-ppm之其他組分(非銀及至少一種摻雜元素的組分)。
在本文中使用術語「銀合金」。其應意謂由量在89至99.50 wt%範圍內之銀及總量為0.50至11 wt%之至少一種合金元素組成;較佳由量在92至99.50 wt%範圍內之銀及總量為0.50至8 wt%之至少一種合金元素組成;或甚至由量在96至99.50 wt%範圍內之銀及總量為0.50至4 wt%之至少一種合金元素組成的合金。其可包含總量為至多<5000 wt.-ppm,例如,30至<5000 wt.-ppm之至少一種摻雜元素(非該至少一種合金元素)。其可包含總量為至多500 wt.-ppm之其他組分(非銀、至少一種合金元素及至少一種摻雜元素的組分)。
較佳合金元素之實例包括鈀、金、鎳、鉑、銅、銠及釕。
較佳摻雜元素之實例包括鈣、鎳、鉑、銅、銠及釕。
如已提及,線芯可包含總量為至多500 wt.-ppm之所謂的其他組分。其他組分,通常亦稱為「不可避免之雜質」,為源自所用原料中所存在之雜質或導線製造過程的少量化學元素及/或化合物。其他組分之0至500 wt.-ppm的低總量確保導線特性之良好再現性。通常不分開來添加存在於芯中之其他組分。每種個別其他組分可以線芯之總重量計,以小於30 wt.-ppm,較佳小於15 wt.-ppm之量包含在內。
與前述一致,線芯係由純銀、摻雜式銀或銀合金組成。
線芯為散裝材料之均質區。由於任何散裝材料始終具有可能在一定程度上展現不同特性之表面區域,因此線芯特性理解為散裝材料之均質區的特性。散裝材料區之表面就形態、組成(例如硫、氯及/或氧含量)及其他特徵而言可有所不同。表面為線芯與疊置於線芯上之雙層塗層之間的界面區。通常,雙層塗層完全疊置於線芯之表面上。在線芯與疊置於其上之雙層塗層之間的導線區域中,可存在線芯與雙層塗層兩者之材料的組合。
疊置於導線之表面上的雙層塗層係由1至50 nm,較佳1至20 nm厚之鎳或鈀內層及鄰接之5至200 nm,較佳10至100 nm厚之金外層構成。在此情形下,術語「厚」或「塗層厚度」意謂與線芯縱軸垂直之方向上的塗層尺寸。
關於該雙層塗層之組成,其內層之鎳或鈀含量為例如,以之內塗層之總重量計,至少50 wt%,較佳至少95 wt%。尤其較佳地,內塗層係由純鎳或鈀組成。純鎳或鈀通常具有以內塗層之總重量計,小於1 wt%其他組分(非鎳或鈀之組分)。鄰接之金外層之金含量為例如,以外塗層之總重量計,至少50 wt%,較佳至少95 wt%。尤其較佳地,外塗層係由純金組成。純金通常具有以外塗層之總重量計,小於1 wt%其他組分(非金組分)。
在一實施例中,至少藉由以下非固有特性(α)至(θ)中之一者表徵導線: (α) 抗腐蝕性具有不超過5%,例如在0至5%範圍內(參見如下文所述之「測試方法A」),較佳在0至0.1%範圍內之毛細管楔上升之值, (β) 防潮性具有不超過5%,例如在0至5%範圍內(參見如下文所述之「測試方法B」),較佳在0至0.1%範圍內之毛細管楔上升之值, (γ) 導線電阻率小於4.0 µΩ∙cm,例如在1.6至4.0 µΩ∙cm範圍內,較佳在1.63至3.4 µΩ∙cm範圍內(參見如下文所述之「測試方法C」), (δ) 導線之銀枝晶生長不超過12 µm/s,例如在0至12 µm/s範圍內,較佳在0至2 µm/s範圍內(參見如下文所述之「測試方法D」), (ε) 線芯硬度不超過80 HV (10mN/12s),例如在50至80 HV範圍內,較佳在50至70 HV範圍內(參見如下文所述之「測試方法E」), (ζ) 第1毛細管楔型接合(第1楔)之製程窗面積具有至少200 mA·g,例如400至600 mA·g (針對直徑為17.5 µm的已毛細管楔型接合至Al-0.5wt%Cu接合襯墊之導線)之值(參見如下文所述之「測試方法F」), (η) 第2針腳式接合(第2楔)之製程窗面積具有至少50 mA·g,例如125至175 mA·g (針對直徑為17.5 µm的針腳式接合至金細柵線之導線)之值(參見如下文所述之「測試方法G」), (θ) 導線之屈服強度不超過170 MPa,例如在140至170 MPa範圍內(參見如下文所述之「測試方法H」)。
在本文中對於線芯使用術語「非固有特性」。非固有特性視線芯與其他因素,如所用量測方法及/或量測條件之關係而定,固有特性意謂線芯本身所具有之特性(獨立於其他因素)。
本發明方法中所用之導線具有出人意料之優點,其實現具有明顯較寬毛細管楔型接合製程窗之毛細管楔型接合。可藉由至少包含步驟(i)至(v)之方法製造導線: (i)提供由純銀或摻雜式銀或銀合金組成之前驅體物件, (ii)伸長前驅體物件以形成細長前驅體物件,直至獲得在7850至49000 µm2 範圍內之中間截面或在100至250 µm,較佳130至140 µm範圍內之中間直徑, (iii) 將鎳或鈀內層(基層)及鄰接之金外層(頂層)之雙層塗層沈積於完成製程步驟(ii)後獲得的細長前驅體物件之表面上, (iv) 進一步伸長完成製程步驟(iii)後獲得的塗佈前驅體物件,直至獲得所需最終截面或直徑,及 (v)在範圍為200℃至600℃之烘箱設定溫度下對完成製程步驟(iv)後獲得的塗佈前驅體進行最終分股退火(strand annealing)持續在0.4至0.8秒範圍內之暴露時間,以形成導線。
在本文中使用術語「分股退火」。其為允許以高再現性快速製造導線的連續過程。在本發明之情形下,分股退火意謂以動態方式進行退火,同時牽拉或移動待退火之塗佈前驅體通過習知退火烘箱,且在已離開退火烘箱之後纏繞於捲軸上。此處,退火烘箱通常呈給定長度之圓柱管形式。伴隨可在例如10至60公尺/分鐘範圍內選擇之給定退火速度下的其限定溫度輪廓,可界定且設定退火時間/烘箱溫度參數。
在本文中使用術語「烘箱設定溫度」。其意謂退火烘箱之溫度控制器中所固定之溫度。
本發明在前驅體物件、細長前驅體物件、塗佈前驅體物件、塗佈前驅體及塗佈導線之間加以區分。術語「前驅體物件」用於尚未達至線芯之所需最終截面或最終直徑的彼等導線前期,而術語「前驅體」用於所需最終截面或所需最終直徑下的導線前期。完成製程步驟(v)後,亦即對所需最終截面或所需最終直徑下的塗佈前驅體進行最終分股退火之後,獲得可用於本發明方法中之導線。
如製程步驟(i)中所提供之前驅體物件可由純銀組成。通常,該前驅體物件呈棒形式,其具有例如2至25 mm之直徑及例如2至100 m之長度。該銀棒可藉由使用合適模具連續鑄銀,之後冷卻且固化來製造。
在替代方案中,如製程步驟(i)中所提供之前驅體物件可由摻雜式銀或銀合金組成。該前驅體物件可藉由將銀與所需量之所需組分摻混、摻雜或摻混及摻雜來獲得。摻雜式銀或銀合金可藉由熟習金屬合金技術者已知的習知製程,例如藉由以所需成比例比率將組分熔融在一起來製備。在此情況下,可使用一或多種習知母合金。可例如利用感應爐進行熔融過程,且有利的是在真空下或在惰性氣體氛圍下工作。可冷卻如此產生之熔融物以形成基於銀之前驅體物件的均質件。通常,該前驅體物件呈棒形式,該棒具有例如2至25 mm之直徑及例如2至100 m之長度。該棒可藉由使用合適模具連續鑄造該摻雜式銀或(摻雜式)銀合金熔體,之後冷卻且固化來製造。
在製程步驟(ii)中,伸長前驅體物件以形成細長前驅體物件,直至獲得在7850至49000 µm2 範圍內之中間截面或在100至250 µm,較佳130至140 µm範圍內之中間直徑。伸長前驅體物件之技術為已知的。較佳技術為輥壓、型鍛、拉模或類似者,其中拉模為尤其較佳的。在後一情況中,以若干製程步驟拉伸前驅體物件,直至達至所需中間截面或所需中間直徑。熟習此項技術者熟知該線模拉伸製程。可採用習知碳化鎢及金剛石拉伸模,且可採用習知拉伸潤滑劑以支持拉伸。
步驟(ii)可包括伸長前驅體物件之中間批式退火的一或多個子步驟,其在400℃至800℃範圍內之烘箱設定溫度下進行持續50至150分鐘範圍內之暴露時間。中間批式退火可例如用拉伸呈直徑為約2 mm且捲繞在捲筒上之棒進行。
視需要之製程步驟(ii)之中間批式退火可在惰性或還原氛圍下進行。眾多類型之惰性氛圍以及還原氛圍為此項技術中已知的且用於吹掃退火烘箱。在已知惰性氛圍中,氮氣或氬氣為較佳的。在已知還原氛圍當中,氫氣為較佳的。另一較佳還原氛圍為氫氣及氮氣之混合物。較佳氫氣及氮氣之混合物為90至98 vol%氮氣及相應地2至10 vol%氫氣,其中總vol%為100 vol%。較佳氮氣/氫氣之混合物等於90/10、93/7、95/5及97/3 vol%/vol%,各者按混合物之總體積計。
在製程步驟(iii)中,將由鎳或鈀內層及鄰接之金外層構成之雙層塗層沈積於完成製程步驟(ii)後獲得的細長前驅體物件之表面上,以便將塗層疊置在該表面上。
技術人員知曉如何計算細長前驅體物件上之該塗層之厚度,以最終獲得呈關於導線實施例所揭示的,亦即在最終伸長塗佈前驅體物件之後的層厚度的塗層。技術人員知曉用於在銀或銀合金表面上形成根據實施例之材料的塗層的多種技術。較佳技術為鍍覆(諸如,電鍍及無電極電鍍)、材料自氣相之沈積(諸如,濺鍍、離子電鍍、真空蒸發及物理氣相沈積)及材料自熔體之沈積。電鍍為較佳技術。
在製程步驟(iv)中,進一步伸長製程步驟(iii)完成後獲得的塗佈前驅體物件,直至獲得所需導線之最終截面或直徑。伸長塗佈前驅體物件之技術為類似於上文製程步驟(ii)之揭示內容中提及之技術之相同伸長技術。
在製程步驟(v)中,在範圍為200℃至600℃,較佳200℃至400℃之烘箱設定溫度下對完成製程步驟(iv)後獲得的塗佈前驅體進行最終分股退火持續在0.4至0.8秒範圍內之暴露時間,以形成塗佈導線。
在一較佳實施例中,將最終經分股退火之塗佈前驅體,亦即仍較熱之塗佈導線在水中淬滅,在個實施例中,該水可含有一或多種添加劑,例如,0.01至0.07體積%之一或多種添加劑。在水中淬滅意謂例如藉由浸漬或滴注,立即或快速(亦即在0.2至0.6秒內)將最終經分股退火之塗佈前驅體自其在方法步驟(v)中經歷之溫度冷卻至室溫。
完成製程步驟(v)及視需要之淬滅後,完成塗佈導線。為了充分受益於其特性,有利的是或立即(亦即毫不耽擱)將其用於線接合應用,例如在完成製程步驟(v)後不超過28天內。
在本發明方法之步驟(2)中,抬升毛細管楔型接合導線以便在步驟(1)中所形成之毛細管楔型接合件與第二電子組件之接觸表面之間形成導線環。以熟習此項技術者已知的習知方式進行具有所需環形狀及所需環製程輪廓(毛細管運動)的接線環的形成,且因此不需要詳細解釋。其可根據針對環形成輪廓之KNS製程用戶指南(KNS Process User Guide for looping profile) (Kulicke & Soffa Industries公司, Fort Washington, PA, USA, 2002)中所述之程序進行工作。環形狀及環製程輪廓可藉由調整如例如,扭接高度、反向運動、扭接距離、扭接角、環因子、形狀角、跨度、最後扭接角度及/或最後扭接長度的環形成參數進行測定。環製程輪廓之實例包括標準環、工作環、BGA2-環、BGA3-環、BGA4-環、BGA5-環、K-環、PSA-環、ULL-環。
在本發明方法之步驟(3)中,將接線針腳式接合至第二電子組件之接觸表面。步驟(3)之針腳式接合程序為熟習此項技術者熟知的且不包含方法學特性。可使用常用針腳式接合設備或針腳式接合工具。其可根據針對支座針腳式接合(stand-off stitch bond;SSB)之KNS製程用戶指南(Kulicke & Soffa Industries公司, Fort Washington, PA, USA, 2003)中所述之程序進行工作。針腳式接合製程參數可為例如:在例如5至500 g範圍內之接合力;在例如5至200 mA範圍內之超音波能;在例如25℃至250℃範圍內之溫度;在例如2.5至40 µm/ms範圍內之恆定速度;在例如3至30 ms範圍內之接合時間。
如已提及,本發明方法之步驟(1)至(3)為連續步驟。然而,亦可存在一或多種其他次要步驟,例如,在步驟順序(1)至(3)之前、其間或之後進行之步驟。
在本發明方法之一實施例中,第一電子組件為具有接觸表面之基板或具有呈接合襯墊形式之接觸表面之半導體,且第二電子組件為具有接觸表面之基板或具有呈接合襯墊形式之接觸表面之半導體。在該實施例之第一變體中,第一電子組件為具有呈接合襯墊形式之接觸表面之半導體,且第二電子組件為具有接觸表面之基板。在該實施例之第二變體中,第一電子組件為具有接觸表面之基板,且第二電子組件為具有呈接合襯墊形式之接觸表面之半導體。
實例:測試方法 A. 至測試方法 H. 在T = 20℃且相對濕度RH = 50%下進行所有測試及量測。
A.     毛細管楔型接合件之鹽溶液浸泡測試: 將導線毛細管楔型接合至Al-0.5wt% Cu接合襯墊。在25℃下將具有如此接合之導線的測試裝置浸泡於鹽溶液中持續10分鐘,用去離子(DI)水洗滌,且隨後用丙酮洗滌。鹽溶液含有於DI水中之20 wt.-ppm NaCl。在低倍顯微鏡(Nikon MM-40)下以100×放大率檢查上升之楔型接合件之數目。觀測到較高數目之上升之毛細管楔型接合件指示嚴重的界面電腐蝕。
B.     毛細管楔型接合件之防潮性測試: 將導線毛細管楔型接合至Al-0.5wt% Cu接合襯墊。在高加速應力測試(HAST)室中將具有如此接合導線之測試裝置儲存在130℃溫度,85%相對濕度(RH)下持續8小時,且隨後在低倍顯微鏡(Nikon MM-40)下以100×放大率檢查上升之楔型接合件之數目。觀測到較高數目之上升之毛細管楔型接合件指示嚴重的界面電腐蝕。
C.     電阻率: 將試樣(亦即長度為1.0公尺之導線)的兩端連接至提供恆定電流/電壓之電源。用裝置記錄針對供應電壓之電阻。量測裝置為HIOKI模型3280-10,且用至少10個試樣來重複測試。量測值之算術平均值用於以下給出之計算。
根據R = V / I計算電阻R。
根據ρ = (R × A) / L計算比電阻率ρ,其中A為導線之平均截面積,且L為用於量測電壓之裝置的兩個量測點之間的線長度。
根據σ = 1 / ρ計算比電導率。
D.     線之電遷移測試: 在50×放大率之低倍顯微鏡Nikon MM40的接物鏡下,在玻璃板上以毫米內之距離使75 µm直徑之兩條線保持平行。藉由微量吸管在待電連接之兩條線之間形成水滴。將一條線連接至正極且將另一條連接至負極,且向線施加+5 V。在閉路中用+5 V直流電對兩條線加偏壓,串聯連接有10 kΩ電阻器。藉由使用作為電解質之數滴去離子水潤濕兩條線來使電路閉合。銀在電解質中自陰極電遷移至陽極形成銀枝晶,有時兩條線橋接在一起。銀枝晶之生長速率很大程度上視導線之塗層,且在銀合金線芯之情況下,視摻混添加劑而定。
E.     維氏微硬度(Vickers Micro-hardness): 使用具有維氏(Vickers)壓痕器之Mitutoyo HM-200測試設備量測硬度。將10mN壓痕負載之力施加至導線之試樣持續12秒之停留時間。在線及FAB上之中心上進行測試。
F. 毛細管楔型接合(第1楔)製程窗面積: 藉由標準程序進行毛細管楔型接合製程窗面積之量測。使用KNS-iConn接合機工具(Kulicke & Soffa Industries公司, Fort Washington, PA, USA)將測試導線毛細管楔型接合至Al-0.5wt%Cu矽晶粒接合襯墊。重要毛細管楔型接合製程參數為:75 mA之超音波能、20 g之壓縮力、0.5 µm/s之恆定速度、65%之接觸臨限值、150℃之接合溫度、350 µm之尾長延伸、25%之超音波斜變。製程窗值係基於平均直徑為17.5 µm之導線。
藉由克服兩個主要故障模式導出製程窗之四個角: (1) 提供過低力及超音波能會引起導線無法黏附於墊上(NSOP),及 (2) 提供過高力及超聲波能會引起線短尾(SHTL)。
G.     針腳式接合(第2楔)製程窗面積: 藉由標準程序進行針腳式接合製程窗面積之量測。使用KNS-iConn接合機工具(Kulicke & Soffa Industries公司, Fort Washington, PA, USA)將測試導線針腳式接合至球狀柵格陣列(BGA)基板上之鍍金引線細柵線。製程窗值係基於平均直徑為17.5 µm之導線。
藉由克服兩個主要故障模式導出製程窗之四個角: (1) 提供過低力及超聲波能會引起導線無法黏附於引線細柵線上(NSOL),及 (2) 提供過高力及超聲波能會引起線短尾(SHTL)。
H.     伸長率(EL): 使用Instron-5564儀器測試線之拉伸特性。以2.54 cm/min速度針對254 mm標距(L)測試導線。按照ASTM標準F219-96獲取斷裂(fracture/break)上之負載及伸長率。伸長率為拉伸測試開始與結束之間導線之標距(△L)之差,其通常報導為(100 ∙ △L/L) (以百分比計),其用所記錄之負載對延伸率拉伸圖來計算。用斷裂及屈服負載除以導線面積來計算拉伸強度及屈服強度。藉由量尺寸方法、稱重標準長度之線及使用其密度來量測線之實際直徑。
導線樣本 1 12 在各情況下,在坩堝中熔融一定量的具有至少99.99%純度(「4N」)之銀(Ag)、鈀(Pd)及金(Au)。將少量銀-鎳、銀-鈣、銀-鉑或銀-銅母合金添加至熔體中,且藉由攪拌確認添加組分均勻分佈。使用以下母合金:
母合金 組成
Ag-0.5wt%Ni 99.5 wt% Ag 0.5wt% Ni
Ag-0.5wt%Ca 99.5 wt% Ag 0.5 wt% Ca
Ag-0.5wt%Pt 99.5 wt% Ag 0.5 wt% Pt
Ag-0.5wt%Cu 99.5 wt% Ag 0.5 wt% Cu
對於表1之合金,添加母合金之相應組合。
隨後用熔體連續鑄造呈8 mm棒形式之線芯前驅體物件。隨後以若干拉伸步驟對棒進行拉伸以形成具有直徑為134 µm之圓周截面的線芯前驅體。在500℃之烘箱設定溫度下對線芯前驅體進行中間批式退火持續60分鐘之暴露時間,且隨後用由鈀(或鎳)內層及金外層組成之雙層塗層對線芯前驅體進行電鍍,且之後進一步拉伸呈17.5 µm之最終直徑及1至4 nm範圍內之最終鈀或鎳層厚度及10至18 nm範圍內之最終金層厚度,之後在220℃之烘箱設定溫度下進行最終分股退火持續0.6秒之暴露時間,緊接著在含有0.07vol%界面活性劑之水中淬滅如所獲得之塗佈導線。
借助於此程序,製造出若干不同銀及基於銀之塗佈導線之樣品1至12及4N純度之未經塗佈之參考銀線(Ref)。表1顯示直徑為17.5 µm之導線之組成。藉由ICP測定組成。 表1
   塗層 線芯化學   
   塗佈導線的以wt%為單位的塗層成分比重 wt.-ppm wt%   
樣本 Au Pd Ni Ni Ca Pt Au Pd 塗佈導線之總Au+Pd wt%
4N Ag (Ref) - - - 2 2 2 0.0002 0.0002 -
1 0.5 0.05 - 2 2 2 1 1 2.55
2 0.5 0.05 - 2 2 2 1 3 4.55
3 0.5 0.05 - 2 30 2 1 3 4.55
4 0.5 0.05 - 10 20 10 1 3 4.55
5 1 0.05 - 2 2 2 1 3 5.05
6 1 0.05 - 2 2 2 1 3 5.05
7 0.5 - 0.04 2 2 2 1 1 2.5
8 0.5 - 0.04 2 2 2 1 3 4.5
9 0.5 - 0.04 2 30 2 1 3 4.5
10 0.5 - 0.04 10 20 10 1 3 4.5
11 1 0.05 - 2 2 2 1 3 5.05
12 1 0.1 - 2 2 2 1 3 5.1
下表2顯示某些測試結果。用直徑為17.5 µm之導線進行全部測試,除了電遷移測試外,其用75 µm直徑之導線進行。 表2
   樣本 Ref 1 2 3 4 5 6 7 8 9 10 11 12
機械特性 伸長率(%) 7.4 4.1 4.4 4.0 3.9 3.8 4.0 4.2 4.4 4.3 4.1 4.1 4.2
拉伸強度(MPa) 183 470 481 485 483 486 481 483 480 482 484 481 481
屈服強度(MPa) 130 270 275 292 278 275 282 280 275 291 283 283 281
微硬度,HV (10 mN/12 s) 58 70 76 80 80 71 73 72 75 80 78 73 72
電特性 電阻率(µΩ∙cm) 1.6 3.31 3.32 3.32 3.32 3.32 3.31 3.32 3.32 3.32 3.32 3.32 3.32
鹽溶液浸泡測試 毛細管楔上升% 80 1 0 0 0 0 0 1 0 0 0 0 0
防潮性測試 毛細管楔上升% 50 2 0 0 0 0 0 1 0 0 0 0 0
電遷移測試 銀枝晶之生長速率(µm/s) 25 0 0 0 0 0 0 0 0 0 0 0 0
接合製程窗 第1接合(毛細管楔型接合) (mA∙g) 50 250 440 440 430 430 410 390 500 450 440 440 400
第2接合(針腳式接合) (mA∙g) 225 75 140 130 130 130 130 125 150 135 135 135 130

Claims (10)

  1. 一種用於電連接第一電子組件之接觸表面與第二電子組件之接觸表面的方法,其包含以下連續步驟:(1)將具有平均直徑在8至80μm範圍內之環狀截面的導線毛細管楔型接合至該第一電子組件之接觸表面,(2)抬升毛細管楔型接合導線以在步驟(1)中所形成之毛細管楔型接合件與該第二電子組件之接觸表面之間形成導線環,及(3)將該導線針腳式接合至該第二電子組件之接觸表面,其中用具有在0至4度範圍內之較低面角(face angle)的陶瓷毛細管進行步驟(1)之該毛細管楔型接合,其中該導線包含具有表面的線芯,該線芯具有疊置於其表面上之雙層塗層,其中該線芯本身係由選自由以下組成之群的材料組成:純銀、銀含量>99.5wt%之摻雜式銀及銀含量為至少89wt%之銀合金,及其中該雙層塗層係由1至50nm厚之鎳或鈀內層及鄰接之5至200nm厚之金外層構成。
  2. 如請求項1之方法,其中用KNS-iConn接合機進行步驟(1),且其中毛細管楔型接合製程參數包括(a')至(g')中之至少一者:(a')超音波能在50至100mA範圍內,(b')力在10至30g範圍內, (c')恆定速度在0.3至0.7μm/s範圍內,(d')接觸臨限值在60至70%範圍內,(e')接合溫度在25℃至175℃範圍內,(f')尾長延伸在200至500μm範圍內,(g')超音波斜變在0至50%範圍內,或其中用Shinkawa接合機進行步驟(1),且其中毛細管楔型接合製程參數包括(a")至(h")中之至少一者:(a")超音波能在50至100mA範圍內,(b")力在10至30g範圍內,(c")恆定速度在0.3至0.7μm/s範圍內,(d")接觸臨限值在60至70%範圍內,(e")接合溫度在25℃至175℃範圍內,(f")切尾長度在85至110μm範圍內,(g")沈降量在-6至-12μm範圍內,(h")超音波偏斜在0至50%範圍內。
  3. 如請求項1之方法,其中該線芯係由純銀組成,該純銀係由99.95至100wt%銀及至多500wt.-ppm非銀的其他組分組成。
  4. 如請求項1之方法,其中該線芯係由摻雜式銀組成,該摻雜式銀係由>99.5至99.997wt%銀、30至<5000wt.-ppm至少一種摻雜元素以及至多500wt.-ppm非銀及該至少一種摻雜元素的其他組分組成。
  5. 如請求項1之方法,其中該線芯係由銀合金組成,該銀合金係由89至99.50wt%銀、0.50至11wt%至少一種合金元素、至多<5000wt.-ppm至少一種摻雜元素及至多500wt.-ppm非銀、該至少一種合金元素及該至少一種摻雜元素之其他組分組成。
  6. 如請求項5之方法,其中該至少一種合金元素係選自由以下組成之群:鈀、金、鎳、鉑、銅、銠及釕。
  7. 如請求項5之方法,其中該至少一種摻雜元素係選自由以下組成之群:鈣、鎳、鉑、銅、銠及釕。
  8. 如請求項1至7中任一項之方法,其中該第一電子組件為具有接觸表面之基板或具有呈接合襯墊形式之接觸表面之半導體,且該第二電子組件為具有接觸表面之基板或具有呈接合襯墊形式之接觸表面之半導體。
  9. 如請求項8之方法,其中該第一電子組件為具有呈接合襯墊形式之接觸表面之半導體,且該第二電子組件為具有接觸表面之基板。
  10. 如請求項8之方法,其中該第一電子組件為具有接觸表面之基板,且該第二電子組件為具有呈接合襯墊形式之接觸表面之半導體。
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Families Citing this family (1)

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Publication number Priority date Publication date Assignee Title
TWI818531B (zh) * 2021-05-05 2023-10-11 新加坡商新加坡賀利氏材料私人有限公司 塗佈圓線及其製造程序

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201430976A (zh) * 2012-12-27 2014-08-01 Shinkawa Kk 打線裝置
US20150187729A1 (en) * 2014-01-02 2015-07-02 Texas Instruments Incorporated Wire Stitch Bond Having Strengthened Heel
TW201602366A (zh) * 2014-07-15 2016-01-16 Tanaka Electronics Ind 半導體裝置接合用銅稀薄鎳合金線之構造
WO2017091144A1 (en) * 2015-11-23 2017-06-01 Heraeus Oriental Hitec Co., Ltd Coated wire
TW201736606A (zh) * 2016-01-15 2017-10-16 新加坡賀利氏材料私人有限公司 經塗覆線材

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5047825A (zh) * 1973-08-30 1975-04-28
JPH02303038A (ja) * 1989-05-17 1990-12-17 Seiko Epson Corp ワイヤボンディング方法
JPH0547825A (ja) * 1991-08-20 1993-02-26 Mitsubishi Electric Corp キヤピラリチツプおよび半導体装置
JP3074517B2 (ja) * 1995-12-05 2000-08-07 株式会社新川 被覆ワイヤのワイヤボンディング方法
DE69739065D1 (de) * 1996-02-26 2008-12-11 Texas Instruments Inc Verbindungen in integrierten Schaltungen
JP2003133354A (ja) * 2001-10-22 2003-05-09 Orient Semiconductor Electronics Ltd 金属突起の製作装置
TWI248186B (en) * 2004-01-09 2006-01-21 Unaxis Internat Tranding Ltd Method for producing a wedge-wedge wire connection
US7476608B2 (en) * 2005-07-14 2009-01-13 Hewlett-Packard Development Company, L.P. Electrically connecting substrate with electrical device
CH697970B1 (de) 2006-03-30 2009-04-15 Oerlikon Assembly Equipment Ag Verfahren zur Herstellung einer Wedge Wedge Drahtbrücke.
JP2008034567A (ja) * 2006-07-27 2008-02-14 Fujitsu Ltd 半導体装置及びその製造方法
CN102013405B (zh) * 2009-09-04 2012-12-05 日月光封装测试(上海)有限公司 芯片打线接合装置的焊针加热构造及其方法
TWI506710B (zh) * 2009-09-09 2015-11-01 Renesas Electronics Corp 半導體裝置之製造方法
TWI411051B (zh) * 2009-12-02 2013-10-01 Mstar Semiconductor Inc 封裝層疊方法與結構及其電路板系統
US20120032354A1 (en) * 2010-08-06 2012-02-09 National Semiconductor Corporation Wirebonding method and device enabling high-speed reverse wedge bonding of wire bonds
JP5734236B2 (ja) 2011-05-17 2015-06-17 株式会社新川 ワイヤボンディング装置及びボンディング方法
US9059003B2 (en) 2012-02-27 2015-06-16 Nippon Micrometal Corporation Power semiconductor device, method of manufacturing the device and bonding wire
WO2014077026A1 (ja) 2012-11-16 2014-05-22 株式会社新川 ワイヤボンディング装置及び半導体装置の製造方法
SG11201503764YA (en) * 2012-11-16 2015-06-29 Shinkawa Kk Wire-bonding apparatus and method of wire bonding
US9165842B2 (en) * 2014-01-15 2015-10-20 Kulicke And Soffa Industries, Inc. Short tail recovery techniques in wire bonding operations
TWI528481B (zh) * 2014-02-13 2016-04-01 新川股份有限公司 球形成裝置、打線裝置以及球形成方法
TWI517277B (zh) 2014-02-14 2016-01-11 新川股份有限公司 打線裝置以及半導體裝置的製造方法
EP3149645B1 (en) * 2014-06-02 2018-05-16 Antique Books Inc. Device for entering graphical password on small displays with cursor offset
CN106086962A (zh) 2016-06-06 2016-11-09 上海铭沣半导体科技有限公司 一种封装用镀金钯键合铜线的生产工艺
US10847450B2 (en) * 2016-09-28 2020-11-24 Intel Corporation Compact wirebonding in stacked-chip system in package, and methods of making same
US20210283141A1 (en) 2018-05-25 2021-09-16 Medimmune Limited Pyrrolobenzodiazepine conjugates

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201430976A (zh) * 2012-12-27 2014-08-01 Shinkawa Kk 打線裝置
US20150187729A1 (en) * 2014-01-02 2015-07-02 Texas Instruments Incorporated Wire Stitch Bond Having Strengthened Heel
TW201602366A (zh) * 2014-07-15 2016-01-16 Tanaka Electronics Ind 半導體裝置接合用銅稀薄鎳合金線之構造
WO2017091144A1 (en) * 2015-11-23 2017-06-01 Heraeus Oriental Hitec Co., Ltd Coated wire
TW201736606A (zh) * 2016-01-15 2017-10-16 新加坡賀利氏材料私人有限公司 經塗覆線材

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