TWI411051B - 封裝層疊方法與結構及其電路板系統 - Google Patents
封裝層疊方法與結構及其電路板系統 Download PDFInfo
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- TWI411051B TWI411051B TW098141237A TW98141237A TWI411051B TW I411051 B TWI411051 B TW I411051B TW 098141237 A TW098141237 A TW 098141237A TW 98141237 A TW98141237 A TW 98141237A TW I411051 B TWI411051 B TW I411051B
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- H—ELECTRICITY
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- H01L2924/3025—Electromagnetic shielding
Description
本發明有關於積體電路封裝方法、結構及其電路板系統,特別是有關於一種封裝層疊方法與結構及其電路板系統。
積體電路封裝屬於半導體產業的後段加工製程,主要是將晶圓上的積體電路予以分割、黏晶,並加上外接引腳及包覆。而其成品(封裝體)主要是提供一個引接的介面,內部電性訊號可透過封裝材料,例如引腳,將之連接到系統,並提供矽晶片免於受外力與水、濕氣、化學物之破壞與腐蝕等。常見的積體電路封裝方式包含有雙列直插式封裝(Dual In-line Package,DIP)、塑膠方型扁平式封裝(Plastic Quad Flat Package,PQFP)、塑膠扁平封裝(Plastic Flat Package,PFP)、針柵陣列封裝(Pin Grid Array Package,PGA)、球柵陣列封裝(Ball Grid Array Package,BGA)等。
積體電路封裝由積體電路、導線架(lead frame)及殼體所組成。請參考第一圖,第一圖顯示習知積體電路封裝10之剖示圖,包含積體電路102、積體電路托盤(die paddle)104、引腳(finger)106、金線108及殼體100。積體電路102為積體電路封裝10之核心單元,用來進行類比或數位訊號處理。積體電路托盤104與引腳106形成導線架,承載積體電路102及銲接金線108,使信號得以順利傳遞。殼體100用來填充模穴(cavity),以保護積體電路封裝10,其材質可為陶瓷或塑膠,如熱固性環氧樹脂(Epoxy Molding Compound,EMC)。一般而言,金線108與引腳106的電感值約為每毫米1納亨(nH/mm)及0.8nH/mm,例如在256引腳之薄型方型扁平式封裝(Low Profile Quad Flat Package)中,金線108與引腳106的長度為3mm與8~10mm,所形成的等效電感值約為10.2nH。
一般而言,將積體電路組裝到系統級封裝(System-In-Package,簡稱SIP)有多種方法:堆疊組裝、相鄰組裝(side-by-side)、封裝層疊(Package on Package,簡稱PoP)以及四方扁平封裝(Quad Flat Package,簡稱QFP)型。每一種方法都有其獨特之處,堆疊技術在縮小封裝尺寸方面特別有效,是要求小外形尺寸的系統級封裝的最佳選擇,而相鄰組裝通常用於功耗很大的積體電路。
相較於在電路板(printed circuit board,簡稱PCB)上採用多個積體電路的系統設計,使用系統級封裝實現的方案可以更小、更輕、更薄,另一個好處是這樣可以減少或消除系統廠商對高速電路設計的需求。另一項與此相關的優勢是系統級封裝產生的電磁干擾(electromagnetic interference,簡稱EMI)噪訊更小。
通常一個構建在電路板上的嵌入式系統,其噪訊程度大約為90dB。而用系統級封裝技術則能大幅度地將噪訊程度降低到60dB左右。這種改善主要是由於系統級封裝基板上的連接線很短,以及其適當的電源設計。另一個優點是系統級封裝將峰值電壓降低許多,如此將簡化系統廠商終端產品設計。
由於系統級封裝節省了電路板空間,因此也附帶降低了電路板成本。同樣地,由於系統級封裝元件可以得到充分的測試,因而可以節省系統廠商的測試時間,還能降低測試設備的投資,並減少元件的採購流程以及元件庫存。與系統單晶片(system on chip,簡稱SoC)相比,系統級封裝的開發週期更短而開發成本更低。因此,本發明提出一種系統級封裝,特別是有關於一種封裝層疊的方法與結構及其電路板系統。
本發明提出一種封裝層疊方法,包括:接合導線架與基板;將積體電路與基板接合,並電連接積體電路與導線架;以及將積體電路、基板之一部分及導線架之一部分進行封裝並暴露一表面貼裝接合區以形成凹型封裝結構。
本發明更提出一種封裝層疊結構,包括:基板;導線架,電連接至該基板;積體電路,接合至基板以及電連接至導線架;以及凹型包覆,其中,凹型包覆係凹型包覆基板之一部分、導線架之一部分與積體電路,使得基板曝露一表面貼裝接合區。
本發明更提出一種電路板系統,包括:基板;導線架,電連接至基板;雙層電路板,電連接至導線架;積體電路,接合至基板以及電連接至導線架;以及凹型包覆,其中,凹型包覆係凹型包覆基板之一部分、導線架之一部分與積體電路,使得基板曝露一表面貼裝接合區。
為了使 鈞局能更進一步瞭解本發明特徵及技術內容,請參閱以下有關本發明之詳細說明與附圖,然而所附圖式僅提供參考與說明,並非用來對本發明加以限制。
隨著多媒體產品的普及以及對更高數位訊號處理、具有更高儲存容量和靈活性的新型儲存架構的迫切需求,堆疊式封裝層疊(stacked package on package,簡稱PoP)應用正快速成長。在整合複雜邏輯和記憶體方面,封裝層疊是一種新興的、成本低的三維(3D)封裝解決方案。系統設計師可以利用封裝層疊開發新的元件外形、整合更多的半導體,並可通過由堆疊帶來的封裝體積優勢減少電路板(printed circuit board,簡稱PCB)的尺寸。
封裝層疊可以在原始設備製造(Original Equipment Manufacturer,簡稱OEM)廠商、邏輯和記憶體供應廠商的合作下開發完成,封裝層疊解決了影響高密度邏輯與記憶體整合的問題。由於原始設備製造廠商的終端產品組件中的封裝層疊技術解決了高密度整合問題,因此封裝層疊可提供最佳的成本,並消除堆疊積體電路裝配和測試元件流程中固有的良率下降、測試複雜性和冗餘堆疊問題。由於原始設備製造廠商擁有封裝層疊製程,而封裝層疊又允許邏輯和元件供應商使用其現有的裝配及測試基礎架構和流程,因此原始設備製造廠商可最佳化製造成本,保證來源的靈活。
系統級封裝可以說組合了板上系統(system on board)以及將系統變成一個積體電路(die),構成具系統單晶片(system on chip,簡稱SoC)長處的構裝技術。系統級封裝的特性除了可將兩個以上的積體電路組合之外,系統級封裝還能將機能完成之系統或次系統整合在一個封裝當中。系統級封裝可以包含一個或多個打線、積體電路(integrated circuit,簡稱IC)之外,還可將分離式的被動元件埋在封裝基板當中,或將以材料形成方式(forming)的被動元件、表面聲波濾波器(Surface Acoustic Wave filter,簡稱SAW filter)、電磁干擾屏蔽、電容、未封裝積體電路(prepackaged IC)、機械(mechanical)元件等,以及組裝到系統基板中的其他標準元件也內埋在封裝基板中。因此可以將多層電路板降低為兩層電路板或更少,以降低系統廠商之製造成本。
第二圖至第五圖顯示根據本發明實施例所產生之封裝結構圖。第二圖顯示基板與導線架接合之架構圖,接合架構20包括基板22與導線架24,首先接合導線架24與基板22,接合方式可為壓印或黏貼。導線架24可為金屬導線架。
第三圖顯示根據本發明實施例之置入積體電路34後的結構圖。結構30包括基板22、導線架24、連接線32與積體電路34。將積體電路34與基板22接合,並用連接線32電連接積體電路34與導線架24,亦可將積體電路34直接接合導線架24,接合方式非用以限定本發明。舉例而言,積體電路34可為特定應用積體電路(application-specific integrated circuit,簡稱ASIC)或數位信號處理器(digital signal processor,簡稱DSP);連接線32可為金線、銅線或其他金屬導線。積體電路34可以是任何型式的電路,並不受限於互補式金氧半導體(complementary metal-oxide-semiconductor,簡稱CMOS)或雙載子接面電晶體(bipolar junction transistor,簡稱BJT)。
第四圖顯示根據本發明實施例之凹型封裝結構圖,凹型封裝結構40包括基板22、導線架24、連接線32、積體電路34與凹型包覆42。第四圖顯示將第三圖中結構30進行凹型封裝,也就是說,封裝基板22之一部分、導線架24之一部分、積體電路34以及連接線32,以暴露一表面貼裝接合區(surface mount joint,簡稱SMT joint)而將其餘部分封裝。由於表面貼裝接合區並未封裝,因此可以疊加額外的積體電路或其他元件,較佳地為具有高速傳輸介面之元件,例如第三代雙倍資料率同步動態隨機存取記憶體(double-data-rate three synchronous dynamic random access memory,簡稱DDR3記憶體)或序列式先進附加技術(serial advanced technology attachment,簡稱SATA)介面。也由於表面貼裝接合區是暴露在外面,可便利對凹型封裝結構40進行測試,例如:電源測試、接地測試或功能測試,將不合格(fail)的凹型封裝結構40剔除,以避免後續疊加額外的積體電路或其他元件時連帶影響疊加的積體電路,使得製造成本增加。此凹型封裝結構40可以是由複數個凹型封裝結構經由切割分離而得到一個凹型封裝結構40。
第五圖顯示根據本發明實施例之電路板系統50,包括基板22、導線架24、連接線32、積體電路34、凹型包覆42、元件52與電路板54。首先測試元件52,將不合格的元件52剔除,以避免接合至凹型封裝結構40時影響凹型封裝結構40,造成凹型封裝結構40損壞丟棄,使得製造成本增加。接著將測試好的元件52接合至凹型封裝結構40之表面貼裝接合區成為一層疊結構,之後可以將此層疊結構再做封裝以成為一系統級封裝結構,然後,再對系統級封裝結構進行測試。此系統級封裝結構可電連接於一電路板54,較佳地可為一雙層電路板,以供系統廠商做進一步的利用。較佳地,元件52為具有高速傳輸介面之元件,例如DDR3記憶體,應注意到,原本應該位於電路板之DDR3記憶體,根據本實施例之揭露,可直接接合於凹型封裝結構40之表面貼裝接合區,可以具有低電感、低干擾的訊號傳輸品質,如此一來,可以降低對電路板品質等級的要求,而可以使用低成本之雙層電路板。另一方面,在系統生產流程方面也深具優點,本實施例解決了影響高密度邏輯與記憶體整合的問題,並消除堆疊積體電路裝配和測試元件流程中良率下降、測試複雜性和冗餘堆疊的問題。本實施例更允許目前的邏輯和元件供應商使用其現有的裝配及測試基礎架構和流程,因此系統製造廠商可最佳化製造成本,保證料件來源的靈活,選用符合自己需求的元件而不受限於個別廠商。
舉例而言,元件52可以是被動元件、記憶體、具有高速傳輸介面之元件。其封裝方式可為四方扁平封裝、球格陣列封裝(Ball Grid Array,簡稱BGA)、陶瓷針柵陣列封裝(Ceramic Pin Grid Array,簡稱CPGA)、雙列直插式封裝(Dual Inline Package,簡稱DIP)、覆晶針腳柵格陣列封裝(Flip-chip Pin Grid Array,簡稱FCPGA)、有機針腳網格陣列封裝(Organic Pin Grid Array,簡稱OPGA)、薄型小尺寸封裝(Thin Small Outline Package,簡稱TSOP)、小尺寸J形針腳封裝(Small Outline J-Lead,簡稱SOJ)、小尺寸積體電路封裝(Small Outline Integrated Circuit,簡稱SOIC)、收縮小型封裝(Shrink Small-Outline Package,簡稱SSOP)、薄型四方扁平封裝(Thin Quad Flat Pack,簡稱TQFP)、塑膠晶粒承載封裝(Plastic Leaded Chip Carrier,簡稱PLCC)、塑料四方扁平封裝(Plastic Quad Flat Pack,簡稱PQFP)、晶圓級晶片尺寸封裝(Wafer Level Chip Scale Package,簡稱WLCSP)、鑄造陣列處理球柵陣列封裝(Mold Array Process-Ball Grid Array,簡稱MAPBGA)、無引線四方扁平封裝(Quad Flat No-Lead,簡稱QFN)、地柵陣列封裝(Land Grid Array,簡稱LGA)或針柵陣列封裝(Pin Grid Array,簡稱PGA)。
第六圖為根據本發明實施例之封裝層疊方法流程圖。步驟620為接合導線架與基板,接合方式可為壓印或黏貼;步驟640為將積體電路與基板接合,並電連接積體電路與導線架;步驟660為將積體電路做凹型封裝並暴露表面貼裝接合區,也就是說,封裝基板之一部分、導線架之一部分、積體電路以及連接線,暴露表面貼裝接合區而將其餘部分封裝;步驟680為將一元件接合至表面貼裝接合區。
綜上所述,雖然本發明已以較佳實施例揭露如上,然其並非用以限定本發明。任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作各種更動與潤飾,本發明之保護範圍當視後附之申請專利範圍所界定者為準。
本案圖式中所包含之各元件列示如下:
10...積體電路封裝
102...積體電路
104...積體電路托盤
106...引腳
108...金線
100...殼體
20...接合架構
22...基板
24...導線架
30...結構
32...連接線
34...積體電路
40...凹型封裝結構
42...凹型包覆
50...電路板系統
52...元件
54...電路板
本案得藉由下列圖式及說明,俾得更深入之了解:
第一圖為習知積體電路封裝之剖示圖。
第二圖顯示根據本發明實施例之基板與導線架接合之架構圖。
第三圖顯示根據本發明實施例之置入積體電路後的結構圖。
第四圖顯示根據本發明實施例之凹型封裝結構圖。
第五圖顯示根據本發明實施例之電路板系統結構圖。
第六圖顯示根據本發明實施例之封裝層疊方法流程圖。
22...基板
24...導線架
32...連接線
34...積體電路
40...凹型封裝結構
42...凹型包覆
Claims (23)
- 一種封裝層疊方法,包括:接合一導線架與一基板;將一積體電路結合於該基板的一第一表面,並電連接該積體電路與該導線架;以及封裝該積體電路、該基板的該第一表面及該導線架之一部分,並暴露該基板的一第二表面作為一表面貼裝接合區以形成一凹型封裝結構。
- 如申請專利範圍第1項所述的封裝層疊方法,更包括在該表面貼裝接合區接合一元件以形成一層疊結構。
- 如申請專利範圍第2項所述的封裝層疊方法,其中該元件係為一具有高速傳輸介面之元件。
- 如申請專利範圍第2項所述的封裝層疊方法,其中該元件係一被動元件或一記憶體。
- 如申請專利範圍第2項所述的封裝層疊方法,其中該元件之封裝方式為一四方扁平封裝、一球格陣列封裝、一陶瓷針柵陣列封裝、一雙列直插式封裝、一覆晶針腳柵格陣列封裝、一有機針腳網格陣列封裝、一薄型小尺寸封裝、一小尺寸J形針腳封裝、一小尺寸積體電路封裝、一收縮小型封裝、一薄型四方扁平封裝、一塑膠晶粒承載封裝、一塑料四方扁平封裝、一晶圓級晶片尺寸封裝、一鑄造陣列處理球柵陣列封裝、一無引線四方扁平封裝、一地柵陣列封裝或一針柵陣列封裝。
- 如申請專利範圍第2項所述的封裝層疊方法,更包括封 裝該層疊結構以形成一系統級封裝結構。
- 如申請專利範圍第6項所述的封裝層疊方法,更包括測試該系統級封裝結構。
- 如申請專利範圍第2項所述的封裝層疊方法,更包括測試該元件。
- 如申請專利範圍第1項所述的封裝層疊方法,更包括測試該凹型封裝結構。
- 如申請專利範圍第1項所述的封裝層疊方法,更包括將該凹型封裝結構電連接於一電路板。
- 如申請專利範圍第10項所述的封裝層疊方法,其中該電路板係一雙層電路板。
- 一種封裝層疊結構,包括:一基板具有一第一表面與一第二表面;一導線架,電連接至該基板;一積體電路,接合至該基板的該第一表面以及電連接至該導線架;以及一凹型包覆,其中,該凹型包覆係凹型包覆該基板的該第一表面、該導線架之一部分與該積體電路,使得該基板的該第二表面上暴露一表面貼裝接合區。
- 如申請專利範圍第12項所述的封裝層疊結構,更包括一元件,接合至該表面貼裝接合區。
- 如申請專利範圍第13項所述的封裝層疊結構,其中該元件係為一具有高速傳輸介面之元件。
- 如申請專利範圍第13項所述的封裝層疊結構,其中該 元件係一被動元件或一記憶體。
- 如申請專利範圍第13項所述的封裝層疊結構,其中該元件之封裝方式為一四方扁平封裝、一球格陣列封裝、一陶瓷針柵陣列封裝、一雙列直插式封裝、一覆晶針腳柵格陣列封裝、一有機針腳網格陣列封裝、一薄型小尺寸封裝、一小尺寸J形針腳封裝、一小尺寸積體電路封裝、一收縮小型封裝、一薄型四方扁平封裝、一塑膠晶粒承載封裝、一塑料四方扁平封裝、一晶圓級晶片尺寸封裝、一鑄造陣列處理球柵陣列封裝、一無引線四方扁平封裝、一地柵陣列封裝或一針柵陣列封裝。
- 如申請專利範圍第12項所述的封裝層疊結構,其中該積體電路係經由複數個連接線電連接至該導線架。
- 一種電路板系統,包括:一基板包括一第一表面與一第二表面;一導線架,電連接至該基板;一雙層電路板,電連接至該導線架;一積體電路,接合至該基板的該第一表面以及電連接至該導線架;以及一凹型包覆,其中,該凹型包覆係凹型包覆該基板的該第一表面、該導線架之一部分與該積體電路,使得該基板的該第二表面上暴露一表面貼裝接合區。
- 如申請專利範圍第18項所述的電路板系統,更包括一元件,接合至該表面貼裝接合區。
- 如申請專利範圍第19項所述的電路板系統,其中該元 件係為一具有高速傳輸介面之元件。
- 如申請專利範圍第19項所述的電路板系統,其中該元件係一被動元件或一記憶體。
- 如申請專利範圍第19項所述的電路板系統,其中該元件之封裝方式為一四方扁平封裝、一球格陣列封裝、一陶瓷針柵陣列封裝、一雙列直插式封裝、一覆晶針腳柵格陣列封裝、一有機針腳網格陣列封裝、一薄型小尺寸封裝、一小尺寸J形針腳封裝、一小尺寸積體電路封裝、一收縮小型封裝、一薄型四方扁平封裝、一塑膠晶粒承載封裝、一塑料四方扁平封裝、一晶圓級晶片尺寸封裝、一鑄造陣列處理球柵陣列封裝、一無引線四方扁平封裝、一地柵陣列封裝或一針柵陣列封裝。
- 如申請專利範圍第18項所述的電路板系統,其中該積體電路係經由複數個連接線電連接至該導線架。
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TW098141237A TWI411051B (zh) | 2009-12-02 | 2009-12-02 | 封裝層疊方法與結構及其電路板系統 |
EP10014069A EP2330621A1 (en) | 2009-12-02 | 2010-10-28 | Package on package method, structure and associated PCB system |
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US10049977B2 (en) | 2014-08-01 | 2018-08-14 | Qualcomm Incorporated | Semiconductor package on package structure and method of forming the same |
DE102018103979B4 (de) | 2018-02-22 | 2021-10-14 | Infineon Technologies Ag | Baugruppe mit einer Trägereinrichtung mit einem Chip und einer Komponente, die durch eine Öffnung montiert ist, und Verfahren zur Herstellung und zur Verwendung |
US11791309B2 (en) * | 2018-12-12 | 2023-10-17 | Heraeus Materials Singapore Pte. Ltd. | Process for electrically connecting contact surfaces of electronic components |
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CN1399509A (zh) * | 2001-07-27 | 2003-02-26 | 三星电机株式会社 | 制备网格焊球阵列板的方法 |
TW200501383A (en) * | 2003-03-07 | 2005-01-01 | Koninkl Philips Electronics Nv | Semiconductor device, semiconductor body and method of manufacturing thereof |
US20070216010A1 (en) * | 2006-03-17 | 2007-09-20 | Stats Chippac Ltd. | Integrated circuit package system |
US20090152714A1 (en) * | 2007-12-14 | 2009-06-18 | Denso Corporation | Semiconductor device and method for manufacturing the same |
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US6861288B2 (en) * | 2003-01-23 | 2005-03-01 | St Assembly Test Services, Ltd. | Stacked semiconductor packages and method for the fabrication thereof |
US7354800B2 (en) | 2005-04-29 | 2008-04-08 | Stats Chippac Ltd. | Method of fabricating a stacked integrated circuit package system |
US7429786B2 (en) * | 2005-04-29 | 2008-09-30 | Stats Chippac Ltd. | Semiconductor package including second substrate and having exposed substrate surfaces on upper and lower sides |
US7384819B2 (en) * | 2006-04-28 | 2008-06-10 | Freescale Semiconductor, Inc. | Method of forming stackable package |
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CN1399509A (zh) * | 2001-07-27 | 2003-02-26 | 三星电机株式会社 | 制备网格焊球阵列板的方法 |
TW200501383A (en) * | 2003-03-07 | 2005-01-01 | Koninkl Philips Electronics Nv | Semiconductor device, semiconductor body and method of manufacturing thereof |
US20070216010A1 (en) * | 2006-03-17 | 2007-09-20 | Stats Chippac Ltd. | Integrated circuit package system |
US20090152714A1 (en) * | 2007-12-14 | 2009-06-18 | Denso Corporation | Semiconductor device and method for manufacturing the same |
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