JPWO2016203899A1 - 半導体装置用ボンディングワイヤ - Google Patents
半導体装置用ボンディングワイヤ Download PDFInfo
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- JPWO2016203899A1 JPWO2016203899A1 JP2016533746A JP2016533746A JPWO2016203899A1 JP WO2016203899 A1 JPWO2016203899 A1 JP WO2016203899A1 JP 2016533746 A JP2016533746 A JP 2016533746A JP 2016533746 A JP2016533746 A JP 2016533746A JP WO2016203899 A1 JPWO2016203899 A1 JP WO2016203899A1
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- wire
- bonding
- bonding wire
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0227—Rods, wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/3013—Au as the principal constituent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/302—Cu as the principal constituent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
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- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
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- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
- B32B15/018—Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of a noble metal or a noble metal alloy
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/04—Alloys based on a platinum group metal
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/04—Alloys based on copper with zinc as the next major constituent
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
- C23C30/005—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process on hard metal substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L24/745—Apparatus for manufacturing wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
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- B23K2101/40—Semiconductor devices
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- H—ELECTRICITY
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
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- H—ELECTRICITY
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
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- H—ELECTRICITY
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/431—Pre-treatment of the preform connector
- H01L2224/4312—Applying permanent coating, e.g. in-situ coating
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- H—ELECTRICITY
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- Y10T428/12903—Cu-base component
- Y10T428/1291—Next to Co-, Cu-, or Ni-base component
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
- Y10T428/2495—Thickness [relative or absolute]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
- Y10T428/2495—Thickness [relative or absolute]
- Y10T428/24967—Absolute thicknesses specified
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
Abstract
Description
耐力比=最大耐力/0.2%耐力 (1)
ウェッジ接合において、ボンディングワイヤは激しく変形する。変形の際にワイヤが加工硬化すると、接合後のワイヤが硬くなり、その結果としてウェッジ接合の接合強度が低下することとなる。ウェッジ接合強度を維持するためには、上記(1)式で定義した耐力比が1.6以下であると好ましい。ところが、高温環境下におけるボール接合部の接合信頼性向上のためにワイヤ中に上記元素を含有させたところ、耐力比が増大して1.6を超えることとなった。そのため、ウェッジ接合の接合強度低下を来すこととなった。
[1]Cu合金芯材と、前記Cu合金芯材の表面に形成されたPd被覆層とを有する半導体装置用ボンディングワイヤにおいて、前記ボンディングワイヤが、高温環境下における接続信頼性を付与する元素を含み、前記ボンディングワイヤのワイヤ軸に垂直方向の芯材断面に対して結晶方位を測定した結果において、ワイヤ長手方向(ワイヤ軸方向)の結晶方位のうち、ワイヤ長手方向に対して角度差が15度以下である結晶方位<100>の方位比率が30%以上であり、前記ボンディングワイヤのワイヤ軸に垂直方向の芯材断面における平均結晶粒径が、0.9〜1.5μmであることを特徴とする半導体装置用ボンディングワイヤ。
[2]下記(1)式で定義する耐力比が1.1〜1.6であることを特徴とする上記[1]記載の半導体装置用ボンディングワイヤ。
耐力比=最大耐力/0.2%耐力 (1)
[3]前記Pd被覆層の厚さが0.015〜0.150μmであることを特徴とする上記[1]又は[2]記載の半導体装置用ボンディングワイヤ。
[4]前記Pd被覆層上にさらにAuとPdを含む合金表皮層を有することを特徴とする上記[1]〜[3]のいずれか1項記載の半導体装置用ボンディングワイヤ。
[5]前記AuとPdを含む合金表皮層の厚さが0.050μm以下であることを特徴とする上記[4]記載の半導体装置用ボンディングワイヤ。
[6]前記ボンディングワイヤがNi、Zn、Rh、In、Ir、Ptから選ばれる少なくとも1種以上の元素を含み、ワイヤ全体に対する前記元素の濃度が総計で0.011〜2質量%であることを特徴とする上記[1]〜[5]のいずれか1項記載の半導体装置用ボンディングワイヤ。
[7]前記ボンディングワイヤがGa、Geから選ばれる1種以上の元素を含み、ワイヤ全体に対する前記元素の濃度が合計で0.011〜1.5質量%であることを特徴とする上記[1]〜[6]のいずれか1項記載の半導体装置用ボンディングワイヤ。
[8]前記ボンディングワイヤがAs、Te、Sn、Sb、Bi、Seから選ばれる1種以上の元素を含み、ワイヤ全体に対する前記元素の濃度が合計で0.1〜100質量ppmであり、Sn≦10質量ppm、Sb≦10質量ppm、Bi≦1質量ppmであることを特徴とする上記[1]〜[7]のいずれか1項記載の半導体装置用ボンディングワイヤ。
[9]前記ボンディングワイヤがさらにB、P、Mg、Ca、Laから選ばれる少なくとも1種以上の元素を含み、ワイヤ全体に対する前記元素の濃度がそれぞれ1〜200質量ppmであることを特徴とする上記[1]〜[8]のいずれか1項記載の半導体装置用ボンディングワイヤ。
[10]前記ボンディングワイヤの最表面にCuが存在することを特徴とする上記[1]〜[9]のいずれか1項記載の半導体装置用ボンディングワイヤ。
[11]Cu合金芯材が、元素周期表第10族の金属元素を総計で0.1〜3.0質量%含有し、ワイヤ最表面におけるCu濃度が1原子%以上であることを特徴とする上記[1]〜[10]のいずれか1項記載の半導体装置用ボンディングワイヤ。
耐力比=最大耐力/0.2%耐力 (1)
ウェッジ接合において、ボンディングワイヤは激しく変形する。変形の際にワイヤが加工硬化すると、接合後のワイヤが硬くなり、その結果としてウェッジ接合の接合強度が低下することとなる。良好なウェッジ接合強度を維持するためには、上記(1)式で定義した耐力比が1.6以下であると好ましい。ところが、高温環境下でのボール接合部の接合信頼性向上のため、効果を充分に発揮できる量の高温環境下における接続信頼性を付与する元素を含有させたところ、耐力比が増大して1.6を超えることとなった。芯材のCu中に上記元素を含有させた結果、耐力比の増大、即ち硬度の増加が発生したと考えられる。そのため、ウェッジ接合の接合強度低下を来すこととなった。他方において、従来の製造方法の範囲内で耐力比を低減しようとしたところ、耐力比が1.1未満となり、ウェッジ接合性が劣る結果となった。
次に本発明の実施形態に係るボンディングワイヤの製造方法を説明する。ボンディングワイヤは、芯材に用いるCu合金を製造した後、ワイヤ状に細く加工し、Pd被覆層、Au層を形成して、熱処理することで得られる。Pd被覆層、Au層を形成後、再度伸線と熱処理を行う場合もある。Cu合金芯材の製造方法、Pd被覆層、AuとPdを含む合金表皮層の形成方法、熱処理方法について詳しく説明する。
(サンプルの作製)
まずサンプルの作製方法について説明する。芯材の原材料となるCuは純度が99.99質量%以上で残部が不可避不純物から構成されるものを用いた。Au、Pd、Ni、Zn、Rh、In、Ir、Ptは純度が99質量%以上で残部が不可避不純物から構成されるものを用いた。ワイヤ又は芯材の組成が目的のものとなるように、芯材に添加される元素(Ni、Zn、Rh、In、Ir、Pt)を調合する。Ni、Zn、Rh、In、Ir、Ptの添加に関しては、単体での調合も可能であるが、単体で高融点の元素や添加量が極微量である場合には、添加元素を含むCu母合金をあらかじめ作製しておいて目的の添加量となるように調合しても良い。本発明例27〜47では、さらにGa、Ge、As、Te、Sn、Sb、Bi、Se、B、P、Mg、Ca、Laのうちの1種以上を含有させている。
ワイヤ中のNi、Zn、Rh、In、Ir、Pt、Ga、Ge、As、Te、Sn、Sb、Bi、Se、B、P、Mg、Ca、La含有量については、ICP発光分光分析装置を利用して、ボンディングワイヤ全体に含まれる元素の濃度として分析した。
耐力比=最大耐力/0.2%耐力 (1)
本発明例1〜59に係るボンディングワイヤは、Cu合金芯材と、Cu合金芯材の表面に形成されたPd被覆層とを有し、Pd被覆層の厚さが好適範囲である0.015〜0.150μmの範囲にあり、FAB形状がいずれも良好であった。また、これらのボンディングワイヤはNi、Zn、Rh、In、Ir、Ptから選ばれる少なくとも1種以上の元素を含み、ワイヤ全体に対する前記元素の濃度が合計で0.011〜2質量%であることから、HTS評価によるボール接合部高温信頼性も良好であった。
(サンプル)
まずサンプルの作製方法について説明する。芯材の原材料となるCuは純度が99.99質量%以上で残部が不可避不純物から構成されるものを用いた。Ga、Ge、Ni、Ir、Pt、Pd、B、P、Mgは純度が99質量%以上で残部が不可避不純物から構成されるものを用いた。ワイヤ又は芯材の組成が目的のものとなるように、芯材への添加元素であるGa、Ge、Ni、Ir、Pt、Pd、B、P、Mgを調合する。Ga、Ge、Ni、Ir、Pt、Pd、B、P、Mgの添加に関しては、単体での調合も可能であるが、単体で高融点の元素や添加量が極微量である場合には、添加元素を含むCu母合金をあらかじめ作製しておいて目的の添加量となるように調合しても良い。
ワイヤ表面を観察面として、結晶組織の評価を行った。評価手法として、後方散乱電子線回折法(EBSD、Electron Backscattered Diffraction)を用いた。EBSD法は観察面の結晶方位を観察し、隣り合う測定点間での結晶方位の角度差を図示できるという特徴を有し、ボンディングワイヤのような細線であっても、比較的簡便ながら精度よく結晶方位を観察できる。
評価用のリードフレームに、ループ長5mm、ループ高さ0.5mmで100本ボンディングした。評価方法として、チップ水平方向からワイヤ直立部を観察し、ボール接合部の中心を通る垂線とワイヤ直立部との間隔が最大であるときの間隔(リーニング間隔)で評価した。リーニング間隔がワイヤ径よりも小さい場合にはリーニングは良好、大きい場合には直立部が傾斜しているためリーニングは不良であると判断した。100本のボンディングしたワイヤを光学顕微鏡で観察し、リーニング不良の本数を数えた。不良が7個以上発生した場合には問題があると判断し×印、不良が4〜6個であれば実用可能であるがやや問題有りとして△印、不良が1〜3個の場合は問題ないと判断し○印、不良が発生しなかった場合には優れていると判断し◎印とし、表5及び表6の「リーニング」の欄に表記した。
表5及び表6に示すように、本発明例2−1〜2−44に係るボンディングワイヤは、Cu合金芯材と、Cu合金芯材の表面に形成されたPd被覆層とを有し、ボンディングワイヤがGa、Geから選ばれる1種以上の元素を含み、ワイヤ全体に対する前記元素の濃度が合計で0.011〜1.5質量%である。これにより本発明例2−1〜2−44に係るボンディングワイヤは、温度が130℃、相対湿度が85%の高温高湿環境下でのHAST試験でボール接合部信頼性が得られることを確認した。
(サンプル)
まずサンプルの作製方法について説明する。芯材の原材料となるCuは純度が99.99質量%以上で残部が不可避不純物から構成されるものを用いた。As、Te、Sn、Sb、Bi、Se、Ni、Zn、Rh、In、Ir、Pt、Ga、Ge、Pd、B、P、Mg、Ca、Laは純度が99質量%以上で残部が不可避不純物から構成されるものを用いた。ワイヤ又は芯材の組成が目的のものとなるように、芯材への添加元素であるAs、Te、Sn、Sb、Bi、Se、Ni、Zn、Rh、In、Ir、Pt、Ga、Ge、Pd、B、P、Mg、Ca、Laを調合する。As、Te、Sn、Sb、Bi、Se、Ni、Zn、Rh、In、Ir、Pt、Ga、Ge、Pd、B、P、Mg、Ca、Laの添加に関しては、単体での調合も可能であるが、単体で高融点の元素や添加量が極微量である場合には、添加元素を含むCu母合金をあらかじめ作製しておいて目的の添加量となるように調合しても良い。
ワイヤ表面を観察面として、結晶組織の評価を行った。評価手法として、後方散乱電子線回折法(EBSD、Electron Backscattered Diffraction)を用いた。EBSD法は観察面の結晶方位を観察し、隣り合う測定点間での結晶方位の角度差を図示できるという特徴を有し、ボンディングワイヤのような細線であっても、比較的簡便ながら精度よく結晶方位を観察できる。
評価用のリードフレームに、ループ長5mm、ループ高さ0.5mmで100本ボンディングした。評価方法として、チップ水平方向からワイヤ直立部を観察し、ボール接合部の中心を通る垂線とワイヤ直立部との間隔が最大であるときの間隔(リーニング間隔)で評価した。リーニング間隔がワイヤ径よりも小さい場合にはリーニングは良好、大きい場合には直立部が傾斜しているためリーニングは不良であると判断した。100本のボンディングしたワイヤを光学顕微鏡で観察し、リーニング不良の本数を数えた。不良が7個以上発生した場合には問題があると判断し×印、不良が4〜6個であれば実用可能であるがやや問題有りとして△印、不良が1〜3個の場合は問題ないと判断し○印、不良が発生しなかった場合には優れていると判断し◎印とし、表7及び表8の「リーニング」の欄に表記した。
本発明例3−1〜3−50に係るボンディングワイヤは、Cu合金芯材と、Cu合金芯材の表面に形成されたPd被覆層とを有し、ボンディングワイヤがAs、Te、Sn、Sb、Bi、Seから選ばれる少なくとも1種以上の元素を含み、ワイヤ全体に対する前記元素の濃度が合計で0.1〜100質量ppmである。これにより本発明例3−1〜3−50に係るボンディングワイヤは、温度が130℃、相対湿度が85%の高温高湿環境下でのHAST試験でボール接合部信頼性が得られることを確認した。
ボンディングワイヤの原材料として、Cu合金芯材を製造するために純度が99.99質量%以上のCu、添加元素としてNi、Pd、Pt、Au、P、B、Be、Fe、Mg、Ti、Zn、Ag、Siを用意し、被覆層形成用に純度が99.99質量%以上のPdを用意し、表皮合金層形成用に純度が99.99質量%以上のAuをそれぞれ用意した。Cuと添加元素原料を出発原料として秤量した後、これを高真空下で加熱して溶解することで直径10mm程度の銅合金インゴットを得た。その後、該インゴットを鍛造、圧延、伸線して直径500μmのCu合金ワイヤを作製した。次にCu合金ワイヤ表面にPd被覆層を1〜3μm厚、被覆層の表面にAu表皮層を0.05〜0.2μm厚になるように電解めっきで施し、複層ワイヤを得た。Pd被覆層、AuPd表皮合金層の最終的な厚みを表8に記載した。ここで、芯材と被覆層との境界はPd濃度が50原子%の位置とし、被覆層と表皮合金層との境界はAu濃度が10原子%の位置とした。その後、伸線速度が100〜700m/min、ダイス減面率が8〜30%で連続伸線加工を行い表8に記載した最終線径とした。表皮合金層の厚み、Au最大濃度、表面Cu濃度、被覆層の厚みは、伸線加工の間に熱処理を2回乃至3回実施することにより制御した。その時の条件は、ワイヤ直径が200〜250μmにおいて温度500〜700℃、速度10〜70m/min、ワイヤ直径が70〜100μmにおいて温度450〜650℃、速度20〜90m/min、最終線径が細い場合には、更にワイヤ直径が40〜70μmにおいて温度300〜500℃、速度30〜100m/minであった。その後、最終線径で、表8の温度、速度30〜120m/minで熱処理を実施した。また、表面までCuを拡散させるために1回の熱処理だけは、熱処理炉中の酸素濃度を0.2〜0.7%と通常より高めに設定した。この熱処理はできれば最後の方に行ったほうが良く、その理由はCuが表面に出てから伸線加工を繰り返すとCuの酸化が起こり易くなるからである。それ以外の熱処理では、熱処理炉中の酸素濃度を0.2%未満にすることで、表皮合金層の過剰な酸化を抑えつつ、安定した厚さ、組成などを制御した。このようにして直径が15〜25μmのボンディングワイヤを得た。
Claims (11)
- Cu合金芯材と、前記Cu合金芯材の表面に形成されたPd被覆層とを有する半導体装置用ボンディングワイヤにおいて、
前記ボンディングワイヤが、高温環境下における接続信頼性を付与する元素を含み、
前記ボンディングワイヤのワイヤ軸に垂直方向の芯材断面に対して結晶方位を測定した結果において、ワイヤ長手方向の結晶方位のうち、ワイヤ長手方向に対して角度差が15度以下である結晶方位<100>の方位比率が30%以上であり、
前記ボンディングワイヤのワイヤ軸に垂直方向の芯材断面における平均結晶粒径が、0.9〜1.5μmであることを特徴とする半導体装置用ボンディングワイヤ。 - 下記(1)式で定義する耐力比が1.1〜1.6であることを特徴とする請求項1記載の半導体装置用ボンディングワイヤ。
耐力比=最大耐力/0.2%耐力 (1) - 前記Pd被覆層の厚さが0.015〜0.150μmであることを特徴とする請求項1又は2記載の半導体装置用ボンディングワイヤ。
- 前記Pd被覆層上にさらにAuとPdを含む合金表皮層を有することを特徴とする請求項1〜3のいずれか1項記載の半導体装置用ボンディングワイヤ。
- 前記AuとPdを含む合金表皮層の厚さが0.050μm以下であることを特徴とする請求項4記載の半導体装置用ボンディングワイヤ。
- 前記ボンディングワイヤがNi、Zn、Rh、In、Ir、Ptから選ばれる少なくとも1種以上の元素を含み、ワイヤ全体に対する前記元素の濃度が総計で0.011〜2質量%であることを特徴とする請求項1〜5のいずれか1項記載の半導体装置用ボンディングワイヤ。
- 前記ボンディングワイヤがGa、Geから選ばれる1種以上の元素を含み、ワイヤ全体に対する前記元素の濃度が合計で0.011〜1.5質量%であることを特徴とする請求項1〜6のいずれか1項記載の半導体装置用ボンディングワイヤ。
- 前記ボンディングワイヤがAs、Te、Sn、Sb、Bi、Seから選ばれる1種以上の元素を含み、ワイヤ全体に対する前記元素の濃度が合計で0.1〜100質量ppmであり、Sn≦10質量ppm、Sb≦10質量ppm、Bi≦1質量ppmであることを特徴とする請求項1〜7のいずれか1項記載の半導体装置用ボンディングワイヤ。
- 前記ボンディングワイヤがさらにB、P、Mg、Ca、Laから選ばれる少なくとも1種以上の元素を含み、ワイヤ全体に対する前記元素の濃度がそれぞれ1〜200質量ppmであることを特徴とする請求項1〜8のいずれか1項記載の半導体装置用ボンディングワイヤ。
- 前記ボンディングワイヤの最表面にCuが存在することを特徴とする請求項1〜9のいずれか1項記載の半導体装置用ボンディングワイヤ。
- Cu合金芯材が、元素周期表第10族の金属元素を総計で0.1〜3.0質量%含有し、ワイヤ最表面におけるCu濃度が1原子%以上であることを特徴とする請求項1〜10のいずれか1項記載の半導体装置用ボンディングワイヤ。
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