TWI553130B - Copper wire for ball bonding and palladium plating - Google Patents

Copper wire for ball bonding and palladium plating Download PDF

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Publication number
TWI553130B
TWI553130B TW104130903A TW104130903A TWI553130B TW I553130 B TWI553130 B TW I553130B TW 104130903 A TW104130903 A TW 104130903A TW 104130903 A TW104130903 A TW 104130903A TW I553130 B TWI553130 B TW I553130B
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Taiwan
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copper
palladium
wire
layer
coated
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TW104130903A
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TW201631164A (zh
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Hiroyuki Amano
takuya Hamamoto
Yuka Nagae
Yusuke Sakita
Syuichi Mitoma
Mitsuo Takada
Takeshi Kuwahara
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Tanaka Electronics Ind
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Publication of TWI553130B publication Critical patent/TWI553130B/zh

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    • H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
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Description

用於球焊且披覆鈀的銅線
本發明係關於用於球焊且披覆鈀(Pd)的銅線，其適用於半導體裝置所使用的IC晶片電極及外部導線(lead)等之基板的連接，尤其係關於即使為15μm以下的極細線亦可得到安定的熔融球的披覆銅線。
一般而言，分別在披覆銅接合線(bonding wire)與電極的第一接合使用被稱為球形接合的方式，以及在披覆銅接合線與半導體用電路配線基板上的配線的第二接合使用被稱為楔形接合的方式。在該第一接合中，藉由放電結球(EFO)方式，對披覆銅接合線的前端供予電弧入熱，藉此使該前端部熔融後，利用表面張力使熔融物凝固，在接合線的前端形成被稱為無空氣球(FAB)的完全球體。接著，一邊將該初期球體與該電極在150~300℃的範圍內進行加熱，一邊施加超音波進行壓接，藉此使其與晶片上的鋁墊接合。
在此，FAB係指一邊將氮或氮-氫等非氧化性氣體或還原性氣體朝由接合工具前端延伸出去的披覆銅接合線的前端噴吹，一邊使接合線的前端進行火花放電，藉此形成在接合線的前端的熔融球。
以往，對於連接半導體裝置的IC晶片電極與外部導線的披覆銅線，已開發出各式各樣的種類。例如，作為披覆鈀(Pd)的銅線，當初開發出了一種無垢物，在日本特開2004-014884號公報的0020段落中記載： 「對於純度99.9995%、200μm的Cu接合線進行電鍍，形成厚度0.8μm的Pd電鍍披覆層。將該電鍍線進行拉線，製作中心的Cu部(芯材)徑：25μm、Pd電鍍厚度：0.1μm、芯材的顯微維氏硬度(micro Vickers hardness)：77的Pd電鍍Cu接合線」。
但是，由於鈀(Pd)外露，前文所示之披覆無垢的鈀(Pd)的銅線對拉線模具的磨損嚴重，線的解繞性也差，因此是不適於大量生產的材料。再者，即使將披覆無垢的鈀(Pd)的銅線量產，在連續形成FAB時，也會有熔融球不安定的隱藏課題。
之後，開發且提出一種以鈀(Pd)不外露的方式，將鈀(Pd)形成為披覆層的各種披覆材料。例如，在日本特開2012-39079號公報(後述之專利文獻1)揭示了下述發明：「一種用於球焊且披覆鈀(Pd)的銅線，其係包含：由銅(Cu)或銅合金所成之芯材、及由鈀(Pd)所成之披覆層及表面層，且線徑為10~25μm，其特徵為：上述披覆層係線徑之0.001~0.02倍的膜厚的鈀(Pd)披覆層，上述芯材包含0.5~99質量ppm的鋯(Zr)、錫(Sn)、釩(V)、硼(B)、鈦(Ti)的至少一種，剩餘部分由純度99.9質量%以上的銅(Cu)所構成，該表面層係由金(Au)、銀(Ag)、銅(Cu)或該等之合金所成，藉由鑽石模具連續拉線至理論上的最終膜厚為1~7nm為止，而且相對該披覆層的厚度形成為1/8以下厚度之最上層的披覆層」。
再者，在日本特開2010-225722號公報(後述之專利文獻2)揭示一種發明係「一種用於球焊且披覆鈀(Pd)的銅線，其具有以銅(Cu)為主成分的芯材、及在該芯材之上的2種披覆層，其特徵為：該芯材由銅(Cu)-1~500質量ppm磷(P)合金所成，而且該披覆層由鈀(Pd)或鉑(Pt)的 披覆層及金(Au)的表皮層所形成」。
再者，在日本特開2013-131654號公報(後述之專利文獻3)揭示一種發明係「一種用於球焊且披覆鈀(Pd)的銅線，其係包含：由銅(Cu)或銅合金所成之芯材、由純度99質量%以上的鈀(Pd)所形成之中間披覆層，經表面披覆且線徑為10~25μm，其特徵為：藉由上述鈀(Pd)與純度99.9質量%以上的金(Au)的熱成長，在成為該中間披覆層的接合的界面之側的表面層上形成混在層，而且該混在層的鈀表面經氫擴散處理，且以掃描電子顯微鏡觀察所得之剖面的平均厚度為5nm以下」。
上述3種類的披覆銅線透過使金(Au)的表皮層儘可能變薄，從而使其接近最上層披覆有鈀(Pd)的披覆無垢的鈀(Pd)的銅線的性質。
但是，即使為披覆有金(Au)等表皮層的銅線，亦與披覆無垢的鈀(Pd)的銅線同樣地無法獲得安定的熔融球。意即，即使披覆層的厚度為「5nm以下的表皮層(日本特開2010-225722號公報(後述之專利文獻3))」，或「披覆層係線徑之0.001~0.02倍的膜厚的鈀(Pd)披覆層，...理論上的最終膜厚為1~7nm...之最上層的披覆層(日本特開2012-39079號公報(後述之專利文獻1))」，藉由FAB所為之第一接合時的熔融球的形狀也不安定，結果第一接合時的接合強度不安定。
【先前技術文獻】 【專利文獻】
【專利文獻1】日本特開2012-39079號公報
【專利文獻2】日本特開2010-225722號公報
【專利文獻3】日本特開2013-131654號公報
本發明係為解決上述量產接合線在透過EFO形成熔融球方面不安定的課題而完成，目的在提供線的解繞性佳，而且可形成安定的熔融球之用於球焊且披覆鈀(Pd)的銅線。
根據本發明人等的研究，可知熔融球的不均並非受到披覆層厚度的影響，而是取決於熔融球正上方未熔融之披覆銅線表面的表面性狀。亦即，接合線進行第一接合時，在透過EFO形成熔融球的過程中，最初的熔融金屬在接合線前端部分的線表面上潤濕潛移，而使熔融體積膨脹，最終依其表面張力而成為完全球體的熔融球的形狀。
另一方面，可知上述的披覆無垢的鈀(Pd)的銅線由於模具磨損嚴重，因此接合線的表面形狀不均，相對預定的入熱能量，熔融球的體積不安定，因此熔融球的形狀不會形成為完全球體，造成接合強度不均的結果。再者，可知該線的解繞性差係起因於上述表面形狀的不均。基於如上所示之理由，造成披覆無垢的鈀(Pd)的銅線接合特性比上述披覆有金(Au)等表皮層的銅線更差的結果。
再者，根據本發明人等的研究，上述披覆有金(Au)等表皮層的銅線在最表面以金(Au)等被厚厚地覆蓋的位置會呈現出金(Au)等的表面性狀，相對於熔融球，潤濕性過佳，熔融球會上升超過所需的程度。再者，被最表面的金(Au)等薄薄地覆蓋的位置會呈現出鈀(Pd)的 披覆層等的表面性狀，相對於熔融球，潤濕性不太佳。因此可知，在形成熔融球的線表面上的潤濕潛移量會產生差異，熔融球的形狀不會形成為完全球體，造成接合強度不均的結果。
本發明人等更進一步研究的結果，可知在披覆鈀(Pd)的銅線中，若無垢的鈀(Pd)的披覆層、或金(Au)披覆層與鈀(Pd)披覆層的重複披覆層較薄時，若在一定的溫度條件下放置一定的時間，，披覆層正下方的銅(Cu)會由芯材內部貫穿披覆層，而在最表面的全面以預定的厚度滲出。亦即，獲得了接合線中的新的穿隧效應的現象的知識。
該穿隧現象亦可藉由接合線的表面顏色在穿隧效應的現象的前後的改變而得到確認。再者，若加長上述放置時間，亦可透過在披覆銅線的披覆層正下方的芯材中形成的孔隙(空洞)，確認該穿隧現象的存在。因此，滲出至披覆鈀(Pd)的銅線的最表面的銅(Cu)會立即與大氣中的氧結合，而在其表面形成安定的銅氧化物。其中，可知形成有孔隙(空洞)的線無法發揮作為接合線的性能。
亦即，披覆鈀(Pd)的銅線表面的表面性狀係新形成的銅氧化物層的表面性狀，而非為純鈀(Pd)的披覆層、或金(Au)表皮層的表面性狀。另一方面，因穿隧現象而滲出的銅(Cu)的滲出層，即使在室溫下於大氣中放置1個月，亦不會增加，在所形成的銅氧化物層的厚度並未發現變化。這是說，無垢的鈀(Pd)的披覆層會妨礙對銅(Cu)芯材所進行的硫化或氧化。因該穿隧現象所致之極薄銅氧化物層，由於係形成在接合線的全表面，因此並不會受到披覆鈀(Pd)的銅線的剖面形狀或披覆層的表面性狀影響。此在後述之第二圖的表面照片中亦得到證實。
另一方面，若存在無垢的鈀(Pd)的披覆層，則已知鈀(Pd)的增濃部分會集中在完全球體的熔融球的下層，若將如上所示之熔融球接合至鋁墊，則因CuAl的金屬間化合物，可延遲接合界面的銅(Cu)的氧化。結果，因該銅氧化物層的存在，可使對於熔融球的線的潤濕性達到一定程度，而能得到安定的完全球體的熔融球。接著，可使鈀(Pd)的增濃部分達到一定程度，本發明之披覆鈀(Pd)的銅線係可得出與鋁墊的安定的第一接合。
本發明人等經進行各種實驗，可知滲出的速度係受芯材的材質、披覆層的材質或厚度、拉線時的剖面減少率等影響。亦即，該銅氧化物層的厚度係可透過由銅(Cu)或銅合金所成之芯材的種類、或鈀(Pd)的披覆層及金(Au)表皮層的厚度、或擴散層的厚度來適當設定最適值。概言之，該銅氧化物層的厚度係可按照披覆銅線的種類，以奈米級的單位來適當設定最適值。
本發明之目的在提供一種在第一接合時可安定地形成完全球體的熔融球之用於球焊且披覆鈀(Pd)的銅線。再者，本發明之目的在提供一種利用FAB所為之第一接合時接合強度安定之用於球焊且披覆鈀(Pd)的銅線。此外，本發明之目的在提供一種線的解繞性佳之用於球焊且披覆鈀(Pd)的銅線。
本發明用以解決課題之用於球焊且披覆鈀(Pd)的銅線之一，其線徑為10~25μm；且在由銅(Cu)或銅合金所成之芯材上形成有鈀(Pd)的披覆層，其中：在該鈀(Pd)的披覆層中存在有鈀(Pd)單獨的無垢層，並且在該鈀(Pd)的披覆層上形成有來自該芯材的銅(Cu)的滲 出層，且該銅(Cu)的滲出層的表面被氧化。
再者，本發明之用以解決課題之用於球焊且披覆鈀(Pd)的銅線之一，其線徑為10~25μm；且在銅(Cu)或銅合金所成之芯材披覆有鈀(Pd)的披覆層及金(Au)的表皮層，其中：在該金(Au)的表皮層上形成銅(Cu)的滲出層，該銅(Cu)的滲出層的表面被氧化，且在鈀(Pd)的披覆層中存在有鈀(Pd)單獨的無垢層。
在本發明之用於球焊且披覆鈀(Pd)的銅線中，之所以「在該鈀(Pd)的披覆層存在有鈀(Pd)單獨的無垢層」或「在鈀(Pd)的披覆層存在有鈀(Pd)單獨的無垢層」，是因為芯材中的銅(Cu)會藉由適當的熱處理所致之穿隧效應而外露在表皮層的全面。
亦即，由於銅(Cu)或銅合金所成之芯材的銅(Cu)係通過鈀(Pd)單獨的無垢層，因此由鈀(Pd)的披覆層滲出時的表面活性、或由金(Au)的表皮層滲出時的表面活性高，滲出的銅(Cu)係以均一厚度覆蓋在接合線全面。該滲出的銅(Cu)的表面會因大氣中的氧而被氧化，但是氧的侵入深度會受到限制。其中，係認為該穿隧現象的效果是披覆銅線中之鈀(Pd)的披覆層為極薄時所產生的。
由金(Au)的表皮層滲出的銅(Cu)會與大氣中的氧產生強烈的反應。另一方面，通過鈀(Pd)單獨的無垢層而滲出之前，會搶奪金(Au)的表皮層中的氧。再者，雖然氫會透過鈀(Pd)，但是氧不會，因此一定厚度的鈀(Pd)的披覆層會使氧無法侵入。結果，如第一圖所示，由金(Au)的表皮層滲出的銅(Cu)係可藉由鈀(Pd)單獨的無垢層而使氧的侵入止於一定的深度，可控制熔融球的潤濕性。因此將「在鈀(Pd) 的披覆層中存在有鈀(Pd)單獨的無垢層」設為必要的構成要件。所謂的鈀單獨的無垢區域，意指透過Auger分析以分析鈀(Pd)、銅(Cu)、金(Au)、氧(O)的情況下，存在有鈀100%的區域。
其中，銅氧化物層意指由表面起奈米等級之一定深度的銅(Cu)與氧的混在層。若沒有銅氧化物層，利用FAB形成熔融球時，熔融球會在線表面潛移，相對於此，若有銅(Cu)與氧的混在層，則未發現如上所示之潛移現象。例如，在具有金(Au)的表皮層的披覆鈀(Pd)的銅線的情況下，如第一圖所示，由於在未熔融的線表面形成的銅氧化物的關係，熔融球的表面張力會小於金(Au)的表皮層的情形下的表面張力，至此，熔融球不會變得濕潤。因此，不會有熔融球因表面張力而潛移至未熔融的線表面上的情形，可得到安定的熔融球。
在本發明中，層的膜厚係除了利用Auger電子光譜儀的深度方向分析進行確認之外，鈀(Pd)的披覆層或披覆層及金(Au)的表皮層的濃度亦進行確認如下。亦即，將披覆鈀(Pd)的銅線全部熔解，藉由高頻感應耦合電漿發光光譜法(ICP-AES)，求出該溶液中的鈀(Pd)或金(Au)的濃度。其中，藉由Auger電子光譜儀所得之膜厚係根據矽(Si)的蝕刻率來決定，因此與以ICP分析所求出的膜厚並不完全一致。
在本發明之用於球焊且披覆鈀(Pd)的銅線中，芯材的銅合金係以由純度99.9質量%以上的銅(Cu)所成之銅合金為佳，以由純度99.99質量%以上的銅(Cu)所成之銅合金為特佳。剩下的成分組成係可參酌既存的先前技術的合金來適當設定。並且，可以按照所要求的半導體的種類或用途，適當要求添加元素的種類，按照作為接合線所需的機械性質， 亦可適當設定添加元素的組合或添加量。
其中，較佳為銅(Cu)的滲出層的成分元素在該線表面從0.5nm以上至30nm以下的深度被檢出。其理由如以下所示。亦即，若膜厚為未達0.5nm，當在線表面形成複數數縱長的拉線模溝槽時，完全填埋該溝槽的量會變得不足，外露至表面層的銅(Cu)層的厚度不均，隨之會有銅氧化物層的厚度不均之虞。再者，若膜厚超過30nm，會有在接合線的內部形成孔隙(void)(空洞)之虞，會有無法發揮作為接合線形成迴圈(loop)等性能的可能性。因此，將膜厚限定數值在0.5nm以上且30nm以下的範圍。較佳膜厚為1nm以上且25nm以下的範圍，最佳為3nm以上且20nm以下的範圍。
再者，在本發明之用於球焊且披覆鈀(Pd)的銅線中，單獨披覆層、及由表面層與披覆層所構成的披覆層為數百nm，相對於接合線的線徑為10~25μm為幾乎可忽略的厚度，因此即使藉由FAB形成熔融球，亦不會受到披覆層的膜厚影響。但是，因為有該抗氧化性的鈀(Pd)的披覆層，即使在披覆層之上有銅氧化物層，亦不會有芯材被氧化的情形。因此，與已知由銅(Cu)或銅合金所成之芯材組成同樣地，本發明之用於球焊且披覆鈀(Pd)的銅線的熔融球係形成為完全球體形狀而被接合在墊上。
其中，即使拉線至最終線徑之後，再披覆鈀(Pd)或金(Au)之貴金屬的披覆材，亦無法達成本發明之目的。這是因為無法以最終的披覆層填埋不規則的縱長溝槽，因此無法形成本發明中之銅氧化物的表皮層。為形成本發明之極薄的表皮層，雖亦取決於芯材與披覆材的組合的種類，但是一般而言，必須有以線的直徑為1/10以上的縮徑。其中，如上所 示若在芯材的表面形成極薄的馬賽克花紋，由於表皮層極薄，因此依一般的拉線速度及縮徑率，並不會使該馬賽克花紋崩壞。因此，若適當調節1秒以下之調質熱處理的溫度及時間，可輕易形成預定厚度的銅(Cu)的滲出層、及由該滲出層的表面侵入之氧的侵入層。
其中，本發明中之線表面的極薄表面層及披覆層均在第一接合的FAB接合時消失，再者，在第二接合的超音波接合時亦在接合部位消失。
藉由本發明之用於球焊且披覆鈀(Pd)的銅線，由於可在披覆鈀(Pd)的銅線表面安定地形成預定厚度的極薄的銅(Cu)及氧的滲出層，因此在第一接合時，藉由FAB所形成之熔融球的形狀不會產生不均的情形。因此，可使用於球焊且披覆鈀(Pd)的銅線會比現有的更加細線化。再者，可縮小鋁墊面積，且可將藉由小直徑球所形成之披覆鈀(Pd)的銅線進行高密度配線。再者，藉由本發明之披覆鈀(Pd)的銅線，來自線表面的氧的侵入會被鈀(Pd)的披覆層或鈀(Pd)的披覆層及金(Au)表皮層所阻斷，因此可得芯材的銅合金不會被氧化的效果。
再者，由於本發明之用於球焊且披覆鈀(Pd)的銅線的披覆層極薄，因此不論披覆材的材質為何，都可得到安定的完全球體球形。再者，藉由本發明，若存在鈀(Pd)的披覆層，可在不受芯材之其他成分影響的情況下形成銅(Cu)的滲出層，因此可將適用於半導體用途之已知微量成分添加在芯材的銅(Cu)中而形成為銅合金。再者，若存在本發明之鈀(Pd)的披覆層，可在不受其他披覆材影響的情況下而形成銅(Cu)的滲出層，因此迴圈形成等亦為良好。
此外，本發明之用於球焊且披覆鈀(Pd)的銅線係在線最表面全面形成有均質的銅(Cu)的氧化物的結果，線的解繞性會變佳。再者，附帶的效果是，對毛細管的線表面的平滑性會變佳。再者，藉由本發明之用於球焊且披覆鈀(Pd)的銅線，由於銅(Cu)的氧化物層極薄，因此不會有剝落的情形。因此，即使反覆接合多次，亦不會有銅(Cu)的氧化物附著在毛細管上的情形，因此毛細管不會被污染。
1‧‧‧接合線
2‧‧‧線被放出的位置
第一圖係本發明之接合線中之深度方向的Auger分析結果。
第二圖係本發明之接合線表面中銅(Cu)的分布照片。
第三圖係顯示接合線良好的解繞性的圖。
第四圖係顯示接合線不良的解繞性的圖。
【實施例1】
芯材係使用在純度99.999質量%以上的銅(Cu)中添加或未添加100質量ppm之磷(P)者，將其進行連續鑄造，一邊進行中間熱處理(600℃×1小時)一邊壓延，之後進行拉線而得披覆披覆材之前的粗線(直徑1.0mm)。
接著，備妥表1所示之鈀(Pd)的披覆層、以及金(Au)的表皮層，並披覆在該粗線的外周。表皮層的金(Au)的純度為99.999質量%以上，鈀(Pd)的純度為99.99質量%以上。之後，以濕式藉由鑽石模進行連續拉線，進行500℃×1秒的調質熱處理，最終獲得直徑20μm之用於球焊且披覆鈀(Pd)的銅線。其中，平均的縮徑率為6~20%、最終線速為100~1000m /分鐘。其中，為了使銅(Cu)的滲出層改變，在披覆後以200~600℃進行0~2次0.01~120分鐘的熱處理。較佳為1或2次。
與上述實施例1同樣地製作表1左欄所示之披覆鈀(Pd)的銅線(實施例2~實施例6)。此時，變更各種披覆材的厚度及披覆後的熱處理條件、調質熱處理條件，來控制銅(Cu)的滲出層的厚度。
在此，表1所示之表皮層及披覆層的總厚度值的計算，係以王水熔解約1萬m直徑20μm的線，藉由高頻感應耦合電漿發光光譜法(島津製作所股份有限公司的ICPS-8100)求出該溶液中的金(Au)與鈀(Pd)的濃度，再由該濃度算出作為接合線之線徑中的均一膜厚。亦即藉由ICP分析所得之換算值。另一方面，表1所示之銅(Cu)的滲出層、氧的侵入深度、表皮層、鈀(Pd)單獨層及合金層的數值係使用英國VG Scientific公司製掃描型Auger電子顯微鏡(型式：MICROLAB-310D)，以加速電壓10kV及試料電流20nA進行，且讀取出第一圖的結果。再者，將使用該裝置的線表面的銅(Cu)的滲出層的分布顯示在第二圖。
(線的解繞試驗)
將表1中左欄所示之組成的接合線捲繞在捲線筒(直徑50mm)，一邊使捲線筒以每分鐘旋轉9次的旋轉速度旋轉15分鐘，一邊由30cm的高度垂下接合線而將接合線解繞，藉由接合線被送出的位置來評估接合線的解繞性。亦即，由捲線筒送出接合線(1)的位置(2)，若如第三圖所示為A區域，即評估為良好(○)，若如第四圖所示為B區域以下至D區域的區域，則評估為(×)。關於各評估水準，進行N數5的評估。
(熔融球的不均試驗)
熔融球的不均試驗係進行如下。
意即，在表1右欄所示之例中，針對實施品1~實施品6的線，以K&S公司製全自動帶狀接合器(ribbon bonder)ICONN型超音波裝置在經Ag電鍍的導線框架(QFP-200)上，藉由使30μm的熔融球成為壓接直徑40μm的方式，進行1,000個利用FAB所為之第一球焊。該結果顯示在表1右欄。在此，○記號係表示偏芯球形的發生數在10個以內者，△記號係表示偏芯球形的發生數在20個以內者，×記號係表示偏芯球形的發生數在21個以上者。由該試驗結果可知，若銅(Cu)的滲出層的膜厚在0.5~30nm的範圍內，熔融球的不均程度在較佳範圍內。
【比較例】
將在實施品1的線中進行400℃×1秒的調質熱處理者作為比較品1。再者，進行與實施例1同樣的調質熱處理，但由於是高純度銅合金(99.999質量%以上的銅合金)，因此將不存在鈀(Pd)單獨的無垢層者作為比較品2，且將銅(Cu)的滲出層的膜厚為40nm者作為比較品3。
(線的解繞試驗)
與實施品同樣地對比較品1~比較品3進行線的解繞試驗的結果，獲得表1右欄的結果。
(熔融球的不均試驗)
與實施品同樣地對比較品1~比較品3進行線的熔融球的不均試驗的結果，獲得表1右欄的結果。
由線的解繞試驗及熔融球的不均試驗的結果可知，本發明之用於球焊且披覆鈀(Pd)的銅線(實施品1~實施品6)之線的解繞性佳，再者，其熔融球的形狀極為安定，可縮小墊面積。另一方面，可知比較例的披覆銅線(比較品1及比較品2)之線的解繞性都不佳，而且熔融球的不均程度大，第一接合不安定。再者，可知比較品3之披覆銅線的熔融球亦不安定，第一接合不安定。
其中，可知本發明之用於球焊且披覆鈀(Pd)的銅線(實施品1~實施品6)係超過1萬m，即使反覆接合，也都不會有毛細管阻塞，毛細管的平滑性良好。再者，亦未觀察到毛細管內面的磨損。再者，進行HAST試驗(130℃×85%RH(相對濕度))試驗的結果，相較於比較品1~比較品3，實施品1~實施品6的壽命長、可靠性高。
【產業上可利用性】
本發明之用於球焊且披覆鈀(Pd)的銅線係取代習知之金合金線，除了用於通用IC、離散式IC、記憶體IC之外，在為高溫高濕之用途的同時，亦可用於有低成本要求之LED用的IC封裝體、汽車半導體用IC封裝體等半導體用途。

Claims (5)

  1. 一種用於球焊且披覆鈀(Pd)的銅線，其線徑為10~25μm，且在由銅(Cu)或銅合金所成之芯材上形成有鈀(Pd)的披覆層，其中：在該鈀(Pd)的披覆層中存在有鈀(Pd)單獨的無垢層，並且在該鈀(Pd)的披覆層上形成有來自該芯材的銅(Cu)的滲出層，且該銅(Cu)的滲出層的表面係被氧化。
  2. 一種用於球焊且披覆鈀(Pd)的銅線，其線徑為10~25μm，且在銅(Cu)或銅合金所成之芯材披覆有鈀(Pd)的披覆層，該披覆層的表面披覆有金(Au)，其中：在該金(Au)的表皮層上形成來自該芯材的銅(Cu)的滲出層，該銅(Cu)的滲出層的表面係被氧化，且在鈀(Pd)的披覆層中存在有鈀(Pd)單獨的無垢層。
  3. 如申請專利範圍第1項或第2項之用於球焊且披覆鈀(Pd)的銅線，其中會在該線表面為從0.5nm以上至30nm以下的深度檢測出該銅(Cu)的滲出層的成分元素。
  4. 如申請專利範圍第1項或第2項之用於球焊且披覆鈀(Pd)的銅線，其中會在該線表面檢測出氧。
  5. 如申請專利範圍第1項或第2項之用於球焊且披覆鈀(Pd)的銅線，其中會在該線表面為從100nm以上至500nm以下的深度檢測出該鈀(Pd)的披覆層的成分元素。
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