CN105914195B - 用于球焊的包覆钯的铜丝 - Google Patents

用于球焊的包覆钯的铜丝 Download PDF

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CN105914195B
CN105914195B CN201610024309.3A CN201610024309A CN105914195B CN 105914195 B CN105914195 B CN 105914195B CN 201610024309 A CN201610024309 A CN 201610024309A CN 105914195 B CN105914195 B CN 105914195B
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palladium
copper
coated
clad
ball
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CN105914195A (zh
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天野裕之
滨本拓也
永江祐佳
崎田雄祐
三苫修
三苫修一
高田满生
桑原岳
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Tanaka Denshi Kogyo KK
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Tanaka Denshi Kogyo KK
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Abstract

本发明是为了解决量产的焊丝在通过FAB形成熔球方面不稳定的问题而进行的，其目的在于提供一种丝的解卷性良好，并且可以形成稳定熔球的用于球焊的包覆钯的铜丝。一种用于球焊的包覆钯的铜丝，其特征在于，线径为10～25μm，在由铜或铜合金所形成的芯材上形成有钯包覆层，在该钯包覆层中存在有钯单独的纯净层，并且在该钯包覆层上形成有来自该芯材的铜的渗出层，该铜的渗出层的表面被氧化。此外，提供一种用于球焊的包覆钯的铜丝，其特征在于，线径为10～25μm，在由铜或铜合金所形成的芯材上包覆有钯包覆层和金表皮层，在该金表皮层上形成有铜的渗出层，该铜的渗出层的表面被氧化，并且在钯包覆层中存在有钯单独的纯净层。

Description

用于球焊的包覆钯的铜丝
技术领域
本发明涉及适合于半导体装置所使用的IC芯片电极与外部引线等的基板连接的用于球焊的包覆钯(Pd)的铜丝，特别是涉及即使为15μm以下的极细线仍可以得到稳定的熔球的包覆铜丝。
背景技术
一般而言，在包覆铜焊丝与电极的第一接合中使用被称为球形接合的方式，在包覆铜焊丝与半导体用电路配线基板上的配线的第二接合中使用被称为楔形接合的方式。在前述第一接合中，通过电子火焰熄灭(EFO)方式，对包覆铜焊丝的顶端给予电弧热输入，由此使该顶端部熔融后，利用表面张力，使熔融物凝固，在焊丝的顶端形成被称为无空气球(FAB)的正球体。接着，一边将该初期球与前述电极在150～300℃的范围内进行加热，一边施加超声波进行压接，由此将其接合至芯片上的铝焊垫。
此处，所谓FAB是指一边将氮或氮－氢等非氧化性气体或还原性气体向由焊头顶端延伸出的包覆铜焊丝的顶端喷吹，一边使焊丝的顶端火花放电，由此在焊丝顶端所形成的熔球。
以往，对于连接半导体装置的IC芯片电极与外部引线的包覆铜丝，已经开发出各式各样的种类。例如，作为包覆钯(Pd)的铜丝，最初开发了一种纯净(無垢)的材料，在日本特开2004－014884号公报的0020段落中记载了，“对纯度99.9995％、200μm的Cu焊丝进行电镀，形成厚度0.8μm的镀Pd包覆层。将该镀覆丝进行拉丝，制作中心的Cu部(芯材)直径：25μm、Pd镀层厚度：0.1μm、芯材的显微维氏硬度：77的镀Pd的Cu焊丝”。
但是，钯(Pd)外露的这种纯净的钯(Pd)包覆铜丝，拉丝模具的磨损严重，丝的解卷性(巻きほぐれ性)也差，因此是不适于大量生产的材料。此外，即使将纯净的钯(Pd)包覆铜丝量产，在连续形成FAB时，也存在有熔球不稳定的隐藏问题。
之后，开发并提出了以钯(Pd)不外露的方式，将钯(Pd)作为包覆层的各种包覆材料。例如，在日本特开2012－39079号公报(后述的专利文献1)中公开了如下发明，即“一种用于球焊的包覆钯(Pd)的铜丝，由以铜(Cu)或铜合金所形成的芯材、由钯(Pd)所形成的包覆层和表面层构成，且线径为10～25μm，其特征在于，上述包覆层是丝径的0.001～0.02倍膜厚的钯(Pd)包覆层，上述芯材包含0.5～99质量ppm的锆(Zr)、锡(Sn)、钒(V)、硼(B)、钛(Ti)中的至少一种，余量由纯度99.9质量％以上的铜(Cu)构成，前述表面层是由金(Au)、银(Ag)、铜(Cu)或它们的合金形成的、通过金刚石模具连续拉丝至理论上的最终膜厚为1～7nm为止并且相对于前述包覆层的厚度形成为1/8以下的厚度的最上层的包覆层”。
此外，在日本特开2010－225722号公报(后述的专利文献2)中公开了如下发明，即“一种用于球焊的包覆钯(Pd)的铜丝，具有以铜(Cu)为主成分的芯材、和在该芯材之上的2种包覆层，其特征在于，前述芯材由铜(Cu)－1～500质量ppm磷(P)合金形成，并且前述包覆层由钯(Pd)或铂(Pt)包覆层和金(Au)表皮层形成”。
此外，在日本特开2013－131654号公报(后述的专利文献3)中公开了如下发明，即“一种用于球焊的包覆钯(Pd)的铜丝，是包含由铜(Cu)或铜合金所形成的芯材、由纯度99质量％以上的钯(Pd)所形成的中间包覆层的、经表面包覆的线径为10～25μm的用于球焊的包覆钯(Pd)的铜丝，其特征在于，在成为前述中间包覆层的焊接接合界面侧的表面层上具有混在层，该混在层通过上述钯(Pd)和纯度99.9质量％以上的金(Au)的热生长而形成，并且该混在层的钯表面经氢扩散处理，且基于扫描电子显微镜观察所得的剖面平均厚度为5nm以下”。
上述3种包覆铜丝，通过使金(Au)表皮层尽可能变薄，从而使其接近最上层包覆钯(Pd)的纯净的钯(Pd)包覆铜丝的性质。
然而，即使是包覆有金(Au)等表皮层的铜丝，也和纯净的钯(Pd)包覆铜丝同样地无法获得稳定的熔球。也就是说，即使包覆层的厚度为“5nm以下的表皮层(日本特开2010－225722号公报(后述的专利文献3))”，或“包覆层是线径的0.001～0.02倍膜厚的钯(Pd)包覆层，…理论上的最终膜厚为1～7nm…的最上层的包覆层(日本特开2012－39079号公报(后述的专利文献1))”，利用FAB的第一接合时的熔球形状也不稳定，结果第一接合时的接合强度不稳定。
现有技术文献
专利文献
专利文献1：日本特开2012－39079号公报
专利文献2：日本特开2010－225722号公报
专利文献3：日本特开2013－131654号公报
发明内容
发明所要解决的问题
本发明是为了解决量产的焊丝在通过EFO形成熔球方面不稳定的上述问题而进行的，其目的在于提供一种丝的解卷性良好，并且可以形成稳定熔球的用于球焊的包覆钯(Pd)的铜丝。
用于解决问题的方法
根据本发明人们的研究可知，熔球的不均匀并非是受到包覆层厚度的影响，而是取决于紧挨熔球上方的未熔融的包覆铜丝表面的表面性状。也就是说，在焊丝的第一接合时利用EFO的熔球的形成过程是最初的熔融金属在焊丝顶端部分的丝表面上润湿爬升而使熔融体积膨胀，最终通过其表面张力而形成为正球体的熔球形状。
另一方面可知，上述的纯净的钯(Pd)包覆铜丝由于模具磨损严重，因此焊丝的表面形状不均匀，对于预定的热输入能量，熔球的体积不稳定，因此熔球的形状不会形成为正球体，造成了接合强度不均匀的结果。此外可知，该丝的解卷性差的原因在于上述表面形状的不均匀。由于该原因，造成了纯净的钯(Pd)包覆铜丝的焊接特性比上述包覆有金(Au)等表皮层的铜丝更差的结果。
此外，根据本发明人们的研究，上述包覆有金(Au)等表皮层的铜丝在其最表面被金(Au)等较厚地覆盖的位置，呈现出金(Au)等的表面性状，对于熔球，润湿性过好，熔球会上升至必要程度以上。此外，在最表面的金(Au)等较薄地覆盖的位置，呈现出钯(Pd)包覆层等的表面性状，对于熔球，润湿性不太好。因此可知，在形成熔球的丝表面上的润湿爬升量会产生差异，熔球的形状不会形成为正球体，造成了接合强度不均匀的结果。
本发明人们做了进一步的研究，结果可知在包覆钯(Pd)的铜丝中，当纯净的钯(Pd)包覆层、或金(Au)包覆层与钯(Pd)包覆层的多重包覆层较薄时，如果在一定的温度条件下放置一定的时间，则紧挨包覆层下方的铜(Cu)由芯材内部贯穿包覆层，以预定的厚度渗出至最表面的整个面上。也就是说，获得了焊丝的新的隧道效应现象的见解。
该隧道现象也可以由在隧道效应现象的前后焊丝的表面颜色产生变化而得到确认。此外，当增加上述放置时间时，在包覆铜丝的紧挨包覆层的下方的芯材中形成空隙(空洞)，由此也确认了该隧道现象的存在。因此，渗出至包覆钯(Pd)的铜丝的最表面上的铜(Cu)立即与大气中的氧结合而在其表面上形成稳定的铜氧化物。需要说明的是，形成了空隙(空洞)的丝明显无法发挥作为焊丝的性能。
也就是说，包覆钯(Pd)的铜丝表面的表面性状是新形成的铜氧化物层的表面性状，而非纯净的钯(Pd)包覆层、或金(Au)表皮层的表面性状。另一方面，因隧道现象而渗出的铜(Cu)的渗出层，即使在室温下在大气中放置1个月，也没有增加，在形成的铜氧化物层的厚度上未观察到变化。这表示，纯净的钯(Pd)包覆层阻碍了硫化、氧化向铜(Cu)芯材进行。由于因该隧道现象而在焊丝的整个表面上形成了极薄的铜氧化物层，因此其不会受到包覆钯(Pd)的铜丝的剖面形状或包覆层的表面性状的影响。这在后述图2的表面照片中也得到证实。
另一方面已知，如果存在纯净的钯(Pd)包覆层，则钯(Pd)的富集部分集中在正球体熔球的下层，而如果将这样的熔球接合至铝焊垫，则由于CuAl的金属间化合物，可以延迟接合界面的铜(Cu)的氧化。结果，由于该铜氧化物层的存在，可以使熔球对于丝的润湿性达到恒定，从而能够得到稳定的正球体熔球。并且，可以使钯(Pd)的富集部分达到恒定，能够得到本发明的包覆钯(Pd)的铜丝与铝焊垫的稳定的第一接合。
本发明人们进行了各种实验，结果可知渗出的速度受到芯材的材质、包覆层的材质和厚度、拉丝时的剖面减少率等影响。也就是说，该铜氧化物层的厚度可以通过由铜(Cu)或铜合金所形成的芯材的种类、钯(Pd)包覆层以及金(Au)表皮层的厚度、扩散层的厚度而适当地设定最佳值。概括地说，该铜氧化物层的厚度能够根据包覆铜丝的种类，以纳米级的单位适当地设定最佳值。
本发明的目的在于提供一种在第一接合时可以稳定地形成正球体熔球的用于球焊的包覆钯(Pd)的铜丝。此外，本发明的目的在于提供一种在利用FAB的第一接合时接合强度稳定的用于球焊的包覆钯(Pd)的铜丝。此外，本发明的目的在于提供一种丝的解卷性良好的用于球焊的包覆钯(Pd)的铜丝。
用于解决本发明的课题的用于球焊的包覆钯(Pd)的铜丝之一，其特征在于，线径为10～25μm，在由铜(Cu)或铜合金所形成的芯材上形成有钯(Pd)包覆层，在该钯(Pd)包覆层中存在有钯(Pd)单独的纯净层，并且在该钯(Pd)包覆层上形成有来自该芯材的铜(Cu)的渗出层，该铜(Cu)的渗出层的表面被氧化。
此外，用于解决本发明的课题的用于球焊的包覆钯(Pd)的铜丝之一，其特征在于，线径为10～25μm，在由铜(Cu)或铜合金所形成的芯材上包覆有钯(Pd)包覆层和金(Au)表皮层，在该金(Au)表皮层上形成有铜(Cu)的渗出层，该铜(Cu)的渗出层的表面被氧化，并且在钯(Pd)包覆层中存在有钯(Pd)单独的纯净层。
在本发明的用于球焊的包覆钯(Pd)的铜丝中，之所以“在该钯(Pd)包覆层中存在有钯(Pd)单独的纯净层”或“在钯(Pd)包覆层中存在有钯(Pd)单独的纯净层”，其原因在于由于利用适当的热处理所产生的隧道效应，芯材中的铜(Cu)外露在表皮层的整面上。
也就是说，由于由铜(Cu)或铜合金所形成的芯材的铜(Cu)经过钯(Pd)单独的纯净层，因此从钯(Pd)包覆层渗出时的表面活性、或从金(Au)表皮层渗出时的表面活性高，渗出的铜(Cu)以均匀的厚度覆盖在焊丝整个面上。虽然该渗出的铜(Cu)的表面被大气中的氧所氧化，但是氧的侵入深度是有限的。另外，该隧道现象的效果被认为在包覆铜丝中的钯(Pd)包覆层极薄时产生。
从金(Au)表皮层渗出的铜(Cu)与大气中的氧强烈反应。另一方面，在经过钯(Pd)单独的纯净层而渗出之前，夺去了金(Au)表皮层中的氧。此外，钯(Pd)虽然透过氢，但是氧并不透过，因此一定厚度的钯(Pd)包覆层使氧不会侵入。结果，如图1所示，从金(Au)表皮层渗出的铜(Cu)，能够通过钯(Pd)单独的纯净层而使氧的侵入停止在一定的深度，可以控制熔球的润湿性。因此将“在钯(Pd)包覆层中存在有钯(Pd)单独的纯净层”作为必要的构成条件。钯(Pd)单独的纯净区域是指通过俄歇分析对钯(Pd)、铜(Cu)、金(Au)、氧(O)进行分析时钯为100％的区域。
另外，铜氧化物层是指从表面起纳米级尺度的一定深度的铜(Cu)与氧的混在层。在没有铜氧化物层的情况下，通过FAB形成熔球时熔球向丝表面爬升，相对于此，如果具有铜(Cu)和氧的混在层，则未观察到这种爬升现象。例如，在具有金(Au)表皮层的包覆钯(Pd)的铜丝的情况下，如图1所示，由于在未熔融的丝表面上所形成的铜氧化物，熔球的表面张力小于金(Au)表皮层时的表面张力，由此，熔球变得不发生润湿。因此，熔球由于表面张力而变得不向未熔融的丝表面上爬升，可以得到稳定的熔球。
在本发明中，层的膜厚除了通过俄歇光谱分析机的深度方向分析进行确认之外，钯(Pd)包覆层或包覆层与金(Au)表皮层的浓度如下进行确认。即，将包覆钯(Pd)的铜丝整体溶解，通过电感耦合高频等离子体发射光谱分析法(ICP－AES)，求出该溶液中的钯(Pd)或金(Au)的浓度。另外，由于通过俄歇光谱分析机得到的膜厚基本上由硅(Si)的蚀刻率决定，因此与通过ICP分析所求出的膜厚不完全一致。
在本发明的用于球焊的包覆钯(Pd)的铜丝中，芯材的铜合金优选为由纯度99.9质量％以上的铜(Cu)所形成的铜合金，特别优选为由纯度99.99质量％以上的铜(Cu)所形成的铜合金。剩余的成分组成可以参考现有技术的合金来适当设定。并且，可以根据所要求的半导体的种类和用途来要求适当添加元素的种类，也可以根据作为焊丝所必需的机械性质而适当设定添加元素的组合和添加量。
另外，优选铜(Cu)的渗出层的成分元素在从所述丝表面至0.5nm以上且30nm以下的深度被检测出。其原因如下所述。即，在膜厚小于0.5nm的情况下，当丝表面上形成较多纵长的拉丝模具沟槽时，完全填埋该沟槽的量变得不足，外露至表面层的铜(Cu)的层的厚度不均匀，随之而来，铜氧化物层的厚度可能会不均匀。此外，在膜厚超过30nm的情况下，在焊丝的内部可能会形成空隙(空洞)，可能无法形成线弧等无法发挥作为焊丝的性能。由此，将膜厚数值限定在0.5nm以上且30nm以下的范围。更优选的膜厚为1nm以上且25nm以下的范围，最优选为3nm以上且20nm以下的范围。
此外，在本发明的用于球焊的包覆钯(Pd)的铜丝中，包覆层单独以及由表面层和包覆层所构成的包覆层为数百nm，相对于焊丝的线径10～25μm是几乎可忽略的厚度，因此即使通过FAB形成熔球，也不会受到包覆层膜厚的影响。但是，由于存在该耐氧化性的钯(Pd)包覆层，即使在包覆层上存在铜氧化物层，芯材也不会被氧化。由此，与已知的由铜(Cu)或铜合金所形成的芯材组成同样地，本发明的用于球焊的包覆钯(Pd)的铜丝的熔球形成为正球体形状而被接合至焊垫。
另外，即使在拉丝至最终线径之后再包覆钯(Pd)或金(Au)贵金属的包覆材料，也无法实现本发明的目的。其原因在于，无法由最终的包覆层填埋不规则的纵长沟槽，无法形成本发明的铜氧化物的表皮层。为了形成本发明的极薄的表皮层，虽然取决于芯材和包覆材料的组合的种类，但是一般而言，必须以丝的直径计为1/10以上的缩径。另外，如果这样在芯材的表面上形成极薄的马赛克花纹，则由于表皮层极薄，因此以通常的拉丝速度及缩径率，该马赛克花纹并不会被破坏。因此，如果适当地调节1秒以下的调质热处理的温度和时间，则可以容易地形成预定厚度的铜(Cu)的渗出层、以及从该渗出层的表面侵入的氧的侵入层。
另外，本发明中丝表面的极薄表面层和包覆层，均在第一焊接的FAB接合时消失，此外，也在第二焊接的超声波接合时在接合部位消失。
发明效果
根据本发明的用于球焊的包覆钯(Pd)的铜丝，由于可以在包覆钯(Pd)的铜丝表面稳定地形成预定厚度的极薄的铜(Cu)和氧的渗出层，因此在第一焊接时，通过FAB产生的熔球形状不会产生不均匀。因此，能够使用于球焊的包覆钯(Pd)的铜丝比现有技术更进一步地细线化。此外，可以减小铝焊垫面积，可以通过小直径球进行包覆钯(Pd)的铜丝的高密度配线。此外，根据本发明的包覆钯(Pd)的铜丝，由于来自丝表面的氧的侵入被钯(Pd)包覆层或钯(Pd)包覆层和金(Au)表皮层阻挡，因此可以得到芯材的铜合金不会被氧化的效果。
此外，本发明的用于球焊的包覆钯(Pd)的铜丝由于包覆层极薄，因此能够与包覆材料的材质无关地得到稳定的正球体球。此外，根据本发明，如果存在钯(Pd)包覆层，则可以不受芯材的其他成分影响地形成铜(Cu)的渗出层，因此可以将适合于半导体用途的已知微量成分添加到芯材的铜(Cu)中而制成铜合金。此外，如果存在本发明的钯(Pd)包覆层，则可以不受其他包覆材料影响地形成铜(Cu)的渗出层，因此也能够使线弧形成等良好。
进而，本发明的用于球焊的包覆钯(Pd)的铜丝在丝的最表面的整个面形成了均质的铜(Cu)的氧化物，因此丝的解卷性变好。此外，作为附带效果，对于毛细管的丝表面的滑动性变得良好。此外，根据本发明的用于球焊的包覆钯(Pd)的铜丝，由于铜(Cu)的氧化物层极薄，因此不会产生剥落。由此，即使反复多次进行焊接，铜(Cu)的氧化物也不会附着到毛细管上，因此毛细管不会被污染。
附图说明
图1是本发明的焊丝的深度方向的俄歇分析结果。
图2是本发明的焊丝表面的铜(Cu)的分布照片。
图3是表示焊丝的良好解卷性的图。
图4是表示焊丝的不良解卷性的图。
具体实施方式
实施例1
芯材使用在纯度99.999质量％以上的铜(Cu)中添加了100质量ppm磷(P)或未进行添加的材料，对其进行连铸，一边进行中间热处理(600℃×1小时)一边轧制，然后进行拉丝，得到包覆包覆材料之前的粗线(直径1.0mm)。
接着，准备表1所示的钯(Pd)包覆层、以及金(Au)表皮层，包覆在该粗线的外周。表皮层的金(Au)的纯度为99.999质量％以上，钯(Pd)的纯度为99.99质量％以上。然后，以湿式通过金刚石模具连续拉丝，进行500℃×1秒的调质热处理，最终得到直径20μm的用于球焊的包覆钯(Pd)的铜丝。需要说明的是，平均缩径率为6～20％、最终线速为100～1000m/分钟。另外，为了改变铜(Cu)的渗出层，包覆后进行0～2次200～600℃下0.01～120分钟的热处理。优选为1或2次。
与上述实施例1同样地制作表1左栏所示的包覆钯(Pd)的铜丝(实施例2～实施例6)。此时，改变各种包覆材料的厚度、包覆后的热处理条件以及调质热处理条件，控制铜(Cu)的渗出层的厚度。
在此，表1所示的表皮层和包覆层的总厚度值，是用王水溶解1万米左右的直径20μm的丝，通过电感耦合高频等离子体发射光谱分析法(株式会社岛津制作所的ICPS－8100)求出该溶液中的金(Au)和钯(Pd)的浓度，并由该浓度计算出焊丝线径的均匀膜厚。即，是通过ICP分析得到的换算值。另一方面，表1所示的铜(Cu)的渗出层、氧的侵入深度、表皮层、钯(Pd)单独层以及合金层的数值，是使用英国VG Scientific公司制的扫描型俄歇电子显微镜(型号：MICROLAB－310D)，在加速电压10kV和试样电流20nA下进行，并读取图1结果的值。此外，将使用相同装置的丝表面的铜(Cu)的渗出层的分布示于图2。
表1
(丝的解卷试验)
将表1中左栏所示组成的焊丝卷绕到卷线筒(直径50mm)上，一边使卷线筒以每分钟9转的旋转速度旋转15分钟，一边将焊丝从30cm的高度垂下，将焊丝解卷，通过焊丝被放出的位置来评价焊丝的解卷性。即，从卷线筒送出焊丝(1)的位置(2)，如果如图3所示为A区域，则评价为良好(○)，如果如图4所示为B区域以下至D区域的区域，则评价为不好(×)。对于各评价水平，进行N数5的评价。
(熔球的不均匀试验)
熔球的不均匀试验如下进行。
即，在表1右栏所示的例子中，对于实施品1～实施品6的丝，使用K&S公司制的全自动带状接合器(ribbon bonder)ICONN型超声波装置，在镀Ag的引线框架(QFP－200)上，通过30μm的熔球，以达到压接直径40μm的方式进行1000根利用FAB的第一球焊。将该结果示于表1右栏。此处，○记号表示偏心球的产生数在10个以内，△记号表示偏心球的产生数在20个以内，×记号表示偏心球的产生数在21个以上。由该试验结果可知，如果铜(Cu)的渗出层的膜厚在0.5～30nm的范围内，则熔球的不均匀程度在优选范围内。
比较例
将在实施品1的丝中进行400℃×1秒调质热处理的材料作为比较品1。此外，将进行与实施例1同样的调质热处理，但由于为高纯度铜合金(99.999质量％以上的铜合金)，不存在钯(Pd)单独的纯净层的材料作为比较品2，并且，将铜(Cu)的渗出层的膜厚为40nm的材料作为比较品3。
(丝的解卷试验)
与实施品同样地进行比较品1～比较品3的丝的解卷试验，得到了表1右栏的结果。
(熔球的不均匀试验)
与实施品同样地进行比较品1～比较品3的丝的熔球的不均匀试验，得到了表1右栏的结果。
由丝的解卷试验和熔球的不均匀试验的结果可知，本发明的用于球焊的包覆钯(Pd)的铜丝(实施品1～实施品6)的丝的解卷性良好，并且熔球的形状极为稳定，可以减小焊垫面积。另一方面可知，比较例的包覆铜丝(比较品1和比较品2)的丝的解卷性均较差，并且熔球的不均匀程度大，第一焊接不稳定。此外可知，比较品3的包覆铜丝的熔球不稳定，第一焊接不稳定。
另外可知，本发明的用于球焊的包覆钯(Pd)的铜丝(实施品1～实施品6)即使超过1万米，并反复焊接，也都不会产生毛细管阻塞，毛细管的滑动性良好。此外，也没有观察到毛细管内表面的磨损。此外，进行HAST试验(130℃×85％RH(相对湿度))试验的结果为，实施品1～实施品6均比比较品1～比较品3的寿命长、可靠性高。
产业上的可利用性
本发明的用于球焊的包覆钯(Pd)的铜丝代替以往的金合金丝，除了通用IC、分立IC、存储IC以外，还具有为高温高湿的用途且要求低成本的用于LED的IC封装体、用于汽车半导体的IC封装体等半导体用途。
符号说明
1 焊丝
2 丝被放出的位置

Claims (5)

1.一种用于球焊的包覆钯(Pd)的铜丝，其特征在于，线径为10～25μm，在由铜(Cu)或铜合金所形成的芯材上形成有钯(Pd)包覆层，在该钯(Pd)包覆层中存在有钯(Pd)单独的纯净层，并且在该钯(Pd)包覆层上形成有来自该芯材的铜(Cu)的渗出层，该铜(Cu)的渗出层的表面被氧化。
2.一种用于球焊的包覆钯(Pd)的铜丝，其特征在于，线径为10～25μm，在由铜(Cu)或铜合金所形成的芯材上包覆有钯(Pd)包覆层并且在包覆层的表面包覆有金(Au)，在该金(Au)表皮层上形成有来自该芯材的铜(Cu)的渗出层，该铜(Cu)的渗出层的表面被氧化，并且在钯(Pd)包覆层中存在有钯(Pd)单独的纯净层。
3.根据权利要求1或2所述的用于球焊的包覆钯(Pd)的铜丝，其特征在于，所述铜(Cu)的渗出层的成分元素在从所述丝表面至0.5nm以上且从所述丝表面至30nm以下的深度被检测出。
4.根据权利要求1或2所述的用于球焊的包覆钯(Pd)的铜丝，其特征在于，氧在所述丝表面被检测出。
5.根据权利要求1或2所述的用于球焊的包覆钯(Pd)的铜丝，其特征在于，所述钯(Pd)包覆层的成分元素在从所述丝表面至100nm以上且从所述丝表面至500nm以下的深度被检测出。
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