JP4941901B2 - ボンディングワイヤの接合構造 - Google Patents
ボンディングワイヤの接合構造 Download PDFInfo
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- JP4941901B2 JP4941901B2 JP2008554026A JP2008554026A JP4941901B2 JP 4941901 B2 JP4941901 B2 JP 4941901B2 JP 2008554026 A JP2008554026 A JP 2008554026A JP 2008554026 A JP2008554026 A JP 2008554026A JP 4941901 B2 JP4941901 B2 JP 4941901B2
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Description
Claims (10)
- ボール接合部を介して半導体素子の電極に接続されるボンディングワイヤの接合構造であって、
前記電極は、Alを主成分とし、
前記ボール接合部に、Pd、Pt、Au、Rhのうち、前記電極のAlとは異なる導電性金属の濃度が高い濃化層が前記ボール接合部および前記電極間の界面と、前記ボール接合部の表面とに形成され、
前記ボール接合部および前記電極間の界面に形成された濃化層は、前記導電性金属の濃度が0.05〜20mol%である領域の厚さが0.1μm以上であり、
前記ボール接合部の表面に形成された濃化層は、前記導電性金属の濃度が0.05〜10mol%である領域の厚さが0.1μm以上であり、
前記ボンディングワイヤは銅を主成分とする芯材と、前記導電性金属を主成分とし前記芯材を被覆する外皮層とを有し、
前記外皮層の表面における前記導電性金属の濃度が60mol%以上である
ことを特徴とするボンディングワイヤの接合構造。 - 前記濃化層における前記導電性金属の濃度は、前記濃化層以外の前記ボール接合部における前記導電性金属の平均濃度の5倍以上であることを特徴とする請求項1記載のボンディングワイヤの接合構造。
- 前記導電性金属は、パラジウム又は白金であることを特徴とする請求項1又は2記載のボンディングワイヤの接合構造。
- 前記外皮層の厚さが0.002〜0.8μmであることを特徴とする請求項1〜3のうちいずれか1項記載のボンディングワイヤの接合構造。
- 前記芯材と前記外皮層との間に、銅と前記導電性金属が濃度勾配を有する拡散層を有することを特徴とする請求項1〜4のうちいずれか1項記載のボンディングワイヤの接合構造。
- 前記ボール接合部の内部に、直径10μm以上の気泡が含まれていないことを特徴とする請求項1〜5のうちいずれか1項記載のボンディングワイヤの接合構造。
- 前記ボール接合部の表面に、直径10μm以上の気泡痕が含まれていないことを特徴とする請求項1〜6のうちいずれか1項記載のボンディングワイヤの接合構造。
- 前記ボール接合部および前記電極間の界面に形成された前記濃化層の少なくとも一部が、前記電極のAlと銅とを主成分とする拡散層または金属間化合物のうち少なくともどちらかの内部に形成されていることを特徴とする請求項1記載のボンディングワイヤの接合構造。
- 前記濃化層の少なくとも一部が前記拡散層または前記金属間化合物のうち少なくともどちらかの内部に形成され、前記導電性金属の濃度が0.5〜30mol%である領域の厚さが0.01μm以上であることを特徴とする請求項8記載のボンディングワイヤの接合構造。
- 前記濃化層は、前記ボール接合部を175℃で200時間加熱した後に前記ボール接合部の界面近傍に形成され、前記導電性金属の濃度が1mol%以上である領域の厚さとして0.2μm以上であることを特徴とする請求項1記載のボンディングワイヤの接合構造。
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JP2004064033A (ja) | 2001-10-23 | 2004-02-26 | Sumitomo Electric Wintec Inc | ボンディングワイヤー |
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JP4204359B2 (ja) | 2002-03-26 | 2009-01-07 | 株式会社野毛電気工業 | ボンディングワイヤーおよびそれを使用した集積回路デバイス |
KR101019811B1 (ko) * | 2005-01-05 | 2011-03-04 | 신닛테츠 마테리알즈 가부시키가이샤 | 반도체 장치용 본딩 와이어 |
JP2006216929A (ja) * | 2005-01-05 | 2006-08-17 | Nippon Steel Corp | 半導体装置用ボンディングワイヤ |
JP4672373B2 (ja) * | 2005-01-05 | 2011-04-20 | 新日鉄マテリアルズ株式会社 | 半導体装置用ボンディングワイヤ |
CN101213663B (zh) * | 2005-06-30 | 2010-05-19 | 费查尔德半导体有限公司 | 半导体管芯封装及其制作方法 |
JP2007123303A (ja) * | 2005-10-25 | 2007-05-17 | Nec Electronics Corp | 半導体装置 |
US7476597B2 (en) * | 2006-07-10 | 2009-01-13 | Texas Instruments Incorporated | Methods and systems for laser assisted wirebonding |
US8610291B2 (en) * | 2006-08-31 | 2013-12-17 | Nippon Steel & Sumikin Materials Co., Ltd. | Copper alloy bonding wire for semiconductor device |
US20090085207A1 (en) * | 2007-09-28 | 2009-04-02 | Texas Instruments, Inc. | Ball grid array substrate package and solder pad |
-
2008
- 2008-01-15 TW TW097101599A patent/TWI427719B/zh active
- 2008-01-15 JP JP2008554026A patent/JP4941901B2/ja active Active
- 2008-01-15 WO PCT/JP2008/050314 patent/WO2008087922A1/ja active Application Filing
- 2008-01-15 US US12/445,789 patent/US8247911B2/en active Active
- 2008-01-15 KR KR1020097003941A patent/KR101280668B1/ko active IP Right Grant
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Also Published As
Publication number | Publication date |
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WO2008087922A1 (ja) | 2008-07-24 |
KR101280668B1 (ko) | 2013-07-01 |
KR20090101346A (ko) | 2009-09-25 |
JPWO2008087922A1 (ja) | 2010-05-06 |
TW200839909A (en) | 2008-10-01 |
US8247911B2 (en) | 2012-08-21 |
JP2011146754A (ja) | 2011-07-28 |
TWI427719B (zh) | 2014-02-21 |
JP5572121B2 (ja) | 2014-08-13 |
US20100213619A1 (en) | 2010-08-26 |
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