JPS6152333A - ボンデイングワイヤ− - Google Patents

ボンデイングワイヤ−

Info

Publication number
JPS6152333A
JPS6152333A JP59172450A JP17245084A JPS6152333A JP S6152333 A JPS6152333 A JP S6152333A JP 59172450 A JP59172450 A JP 59172450A JP 17245084 A JP17245084 A JP 17245084A JP S6152333 A JPS6152333 A JP S6152333A
Authority
JP
Japan
Prior art keywords
elements
wire
weight
bonding wire
kinds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59172450A
Other languages
English (en)
Other versions
JPH0547609B2 (ja
Inventor
Shigemi Yamane
山根　茂美
Koichiro Atsumi
幸一郎 渥美
Tetsuo Ando
安藤　鉄男
Noriaki Yagi
典章 八木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59172450A priority Critical patent/JPS6152333A/ja
Publication of JPS6152333A publication Critical patent/JPS6152333A/ja
Publication of JPH0547609B2 publication Critical patent/JPH0547609B2/ja
Granted legal-status Critical Current

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    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 ［発明の技術分野］ 本発明は、銅系ボンディングワイヤーに関する。
［発明の技術的背景及びその問題点］ ＩＣやＬＳＩ等の半導体素子の内部では、例えば、図面
に示すように、半導体チップ（１）及びリードフィンガ
ー（２）が設けられており、これらを線径１０〜１００
μ程度のボンディングワイヤー（３）で結ぶ構造となっ
ている。
このボンディングワイヤー（３）の接合方法としては、
まず、ワイヤーの先端をポール状に加熱溶融させ、次に
このボール状の先端を半導体チップ（１）に圧接し、更
に弧を描くようにワイヤーを延ばし、３００〜３５０℃
に加熱されＩｃリードフィンガー（２）にワイヤーの一
部を再度圧接し、切断することにより、半導体チップ（
１）とリードフィンガー（２）とを結線するものである
。
この種のボンディングワイヤーとして導電性。
ワイヤー伸び、ワイヤー強度、半導体チップとの接合強
度（以下ボール接合強度と称す、、）及びボール形成性
が要求されており、従来から主に金線が使用されている
。
しかし、近年価格及び導電性の点からボンディングワイ
ヤーとして、銅線を用いる試みがなされているが、銅線
を用いて熱圧接を行なうと、ボンディング強度が十分用
ない場合がしばしばあり、一方、この点を改善しようと
すると導電性が低下し、双方の特性を満足する銅リード
ワイヤーが（７られなか７だ。
［発明の目的〕 本発明は、ボール接合強度が良好で、かつ導電性が良好
な銅リードワイヤーを提供することを目的とり−る。
［発明の概要］ 本発明者らは、ボンディングワイヤーについて鋭意研究
した結果、ボンディング強度の低下は主に形成されたボ
ール中のガスにより生じることを見い出した。
即ち、半導体チップ上にこのボールが圧接された際、ガ
スによる空洞が接合部に位置し、接合強度を低下させる
こと及びこの現象は特に銅線で発生しやすいことを見い
出した。
本発明は、これらの知見をもとに完成されたものである
。
本発明は、Ｂｅ　、Ｓｎ　、Ｚｎ　、Ｚｒ　、Ａｇ。
Ｏｒ及びＦｅ　　（第１添加元素群）から選択された１
種又は２種以上の元素を０．００１重量％以上、０．１
重量％未満含有し、かつｆｖｌｇ、　Ｃａ　、希土類元
素、−１’ｉ、Ｈｆ、Ｖ、Ｎｂ、Ｔａ、Ｎｉ。
Ｐｄ、Ｐｔ、Ａｕ、Ｃｄ、Ｂ、Ｉｎ、ｓｉ。
Ｇｅ、Ｉｎ、Ｓｉ　、Ｇｅ、Ｐｂ、Ｐ、Ｓｂ。
［３ｉ　、Ｓｅ及びＴｅ　（第２添加元素群）から選択
された１種又は２種以上の元素を０．００１〜２重量％
含有し、残部が実質的に銅であるボンディングワイヤー
を提供゛する。
即ち、これら添加元素は、合金中の）ｌ、　Ｏ。
Ｎ、Ｃを固定し、Ｈ２，０□＋Ｎ２及びＣＯガスの発生
を抑制する。
しかし、これらの添加量が多すぎると、導電性を低下さ
せ、一方、少すぎると効果が生じにくい。したがって、
第１添加元素群の成分範囲は、０．００１重量％以上、
０．１重量％未満、更には０．００５重量％以上０．０
５重間％以下が好ましく、第２添加元素群の成分範囲は
、０．００１〜２重量％、更には０．０１〜１重量％が
好ましい。
第１添加元素のうちでは、Ａ！１．０ｒ及びＺｒ、第２
添加元素のうちではＭｇ、Ｙ、ランタノイド元素及びＨ
［が導電性をあまり低下させず、高いガス発生防止効果
をイ１する。
しかし、これらの添加量が多すぎると、導電性を低下さ
せ、一方、少すぎると効果が生じにくい。したかつ、Ａ
ｇ、Ｏｒ及びＺｒから選択された１８１！又は２種以上
の元素の成分範囲は、０．００５〜０．０８重量％、更
には０．００７〜０．０５重量％が好ましく、又、ＭＯ
、Ｙ、ランタンイド元素及び１〜１ｆから選択された１
種又は２種以上の元素の成分範囲は、０．０１〜１重量
％、更には０．０５〜０．２重量％が好ましい。なお、
本発明のワイヤーは被覆して使用してもよい。
以上述べＩＣワイヤーの￥Ｊ造方法を次に述べる。
まず、成分元素を添加して溶解鋳造してインゴットを得
、次にこのインゴットを７００〜８００℃で熱間加工し
、その後９００〜９６０℃で熱処理し、急冷後、６０％
以上の冷間加工を施し、４００〜６００℃で熱処理を施
す。それにより所望のワイヤーが得られる。
［発明の実施例］ 本発明の実施例について説明する。
第１表に示１成分のリードワイヤーを製造し、その特性
として導電性、初期ボール硬度、ワイヤーの伸び、ワイ
ヤー強度、ボール接合強度及びボール形成性を測定した
。
初期ボール硬度は、ボール圧着時の硬度をいい、硬度が
低いほど圧着性は良好となる。又、ワイヤーの伸びは、
ワイヤーが破断するまでの伸びをいい、伸びが大きいほ
ど断線率が低い。
又、ボール接合強度は、熱圧着されているリードワイヤ
ーの接合部につり剣状のカギをかけ、真横に引っばって
、接合部をせん断破壊させるまでの荷１（ａｆ）を測定
゛りることによりえられる。
又、ボール形成性は、ワイヤーの先端がボール状に溶融
した際、酸化するかどうか、空洞ができるかどうか、ボ
ールの径のバラツキが大きいか小さいかという事を測定
することにより判断される。
まず、導電性に関しては、実施例（１）〜（５）及び比
較例（１）がＡｕ線より高い導電性を示し実用的である
。
又、初期ボール硬度に関して、実施例（１）〜（５）及
び比較例（１）、（３）、（４）はビッカース硬度１４
０以下を示し使用できる。
又、ワイヤーの伸びに関しては、実施例（１）〜（５）
及び比較例（１）、（３）がＡｌｌ線より大きい伸びを
示し有用である。
又、ワイヤー強度に関しては、実施例（１）〜（５）及
び比較例（１）〜く３）がＡｌｌ線より大きい強度を示
し有用である。
又、ボール接合強度に関して、実施例（１）〜（５〉及
び比較例（２）〜（４）は接合強度が６５（（ｌｒ）以
上あり有用である。
又、ボール形成性はすべて良好である。
以上述べた如く、各特性を総合的に考慮すると、本発明
の実施例〈１）〜（５）は比較例（１）〜（４）に比べ
て優れている。
以　　下　　余　　白 ［発明の効果］ 本Ｒ明ハ、Ｏｅ　、　Ｓｎ　、　Ｚｎ　、　Ｚｒ　、　
ＡＤ　。
Ｃｒ及びＦＯ（第１添加元素群）から選択された１種又
は２種以上の元素をｏ、ｏｏｉ重■％以上、０６１重量
％未満含有し、かつＭ！ＩＩ　、　Ｃａ　、　＠土類元
素、Ｔｉ　、Ｈｆ　、Ｖ、Ｎｂ　、Ｔａ　、Ｎｉ　。
Ｐｄ、Ｐｊ、Ａｕ、Ｃｄ、８．Ｉｎ、Ｓｉ　。
Ｑｅ、Ｉｎ、Ｓｉ、Ｇｅ、Ｐｂ、Ｐ、Ｓｂ。
Ｓｉ、３ｅ及びＴｅ　（第２添加元素群）から選択され
た１種又は２種以上の元素を０．００１〜２１Ｍ％含有
させることにより、ボール接合強度が良好で、かつ導電
性が良好な銅系リードワイヤーを提供できる。
【図面の簡単な説明】
図面は、半導体素子の一部切り欠ぎ斜視図である。 １・・・半導体チップ ２・・・リードフィンガー ３・・・ボンディングワイヤー ４・・・樹脂モールド

Claims (2)

    【特許請求の範囲】
  1. （１）Ｂｅ、Ｓｎ、Ｚｎ、Ｚｒ、Ａｇ、Ｃｒ及びＦｅ（
    第１添加元素群）から選択された１種又は２種以上の元
    素を０．００１重量％以上、０．１重量％未満含有し、
    かつＭｇ、Ｃａ、希土類元素、Ｔｉ、Ｈｆ、Ｖ、Ｎｂ、
    Ｔａ、 Ｎｉ、Ｐｄ、Ｐｔ、Ａｕ、Ｃｄ、Ｂ、Ｉｎ、Ｓｉ、Ｇｅ
    、Ｉｎ、Ｓｉ、Ｇｅ、Ｐｂ、Ｐ、Ｓｂ、Ｂｉ、Ｓｅ及び
    （第２添加元素群）から選択された１種又は２種以上の
    元素を ０．００１〜２重量％含有し、残部が実質的に銅である
    ボンディングワイヤー。
  2. （２）Ａｇ、Ｃｒ、及びＺｒから選択された１種又は２
    種以上の元素を０．００５〜０．０８重量％含有し、か
    つＭｇ、Ｙ、ランタノイド元素、Ｈｆから選択された１
    種又は２種以上の元素を０．０１〜１重量％含有し、残
    部が実質的に銅である特許請求の範囲第１項に記載のボ
    ンデングワイヤー。
JP59172450A 1984-08-21 1984-08-21 ボンデイングワイヤ− Granted JPS6152333A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59172450A JPS6152333A (ja) 1984-08-21 1984-08-21 ボンデイングワイヤ−

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59172450A JPS6152333A (ja) 1984-08-21 1984-08-21 ボンデイングワイヤ−

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP6145826A Division JP2501305B2 (ja) 1994-06-06 1994-06-06 半導体装置

Publications (2)

Publication Number Publication Date
JPS6152333A true JPS6152333A (ja) 1986-03-15
JPH0547609B2 JPH0547609B2 (ja) 1993-07-19

Family

ID=15942209

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59172450A Granted JPS6152333A (ja) 1984-08-21 1984-08-21 ボンデイングワイヤ−

Country Status (1)

Country Link
JP (1) JPS6152333A (ja)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6199646A (ja) * 1984-10-20 1986-05-17 Tanaka Denshi Kogyo Kk 半導体素子のボンデイング用銅線
JPS6199645A (ja) * 1984-10-20 1986-05-17 Tanaka Denshi Kogyo Kk 半導体素子のボンデイング用銅線
JPS61113740A (ja) * 1984-11-09 1986-05-31 Tanaka Denshi Kogyo Kk 半導体素子のボンデイング用銅線
JPS63111151A (ja) * 1986-10-29 1988-05-16 Kobe Steel Ltd 電気および電子部品用銅合金及びその製造方法
JP2011146754A (ja) * 2007-01-15 2011-07-28 Nippon Steel Materials Co Ltd ボンディングワイヤの接合構造及びその形成方法
CN105543540A (zh) * 2015-12-26 2016-05-04 汕头华兴冶金设备股份有限公司 一种铜铬锆合金及其制备方法
JP5937770B1 (ja) * 2015-05-26 2016-06-22 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
CN105908012A (zh) * 2016-05-13 2016-08-31 四川鑫炬矿业资源开发股份有限公司 一种环保型无铅易切削抗热裂黄铜合金材料及其制备方法
TWI550639B (zh) * 2015-05-26 2016-09-21 Nippon Micrometal Corp Connecting wires for semiconductor devices
JP2016225610A (ja) * 2015-05-26 2016-12-28 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
CN112281018A (zh) * 2020-10-12 2021-01-29 中铁建电气化局集团康远新材料有限公司 一种高强度高导电铜锡合金接触线及其制备工艺

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US8300386B2 (en) 2005-12-28 2012-10-30 Sumitomo Metal Mining Co., Ltd. Porous valve metal thin film, method for production thereof and thin film capacitor
CN104593618B (zh) * 2015-01-06 2016-08-24 湖南金龙国际铜业有限公司 高导超微合金再生铜杆及其精炼方法
CN110042273B (zh) * 2019-05-29 2020-11-06 南京达迈科技实业有限公司 一种高强高导铜合金管及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59139662A (ja) * 1983-01-31 1984-08-10 Mitsubishi Metal Corp 半導体装置のワイヤ・ボンデイング用Ｃｕ合金細線
JPS60124960A (ja) * 1983-12-09 1985-07-04 Sumitomo Electric Ind Ltd 半導体素子結線用線
JPH0547608A (ja) * 1991-08-12 1993-02-26 Showa Denko Kk 固体電解コンデンサの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59139662A (ja) * 1983-01-31 1984-08-10 Mitsubishi Metal Corp 半導体装置のワイヤ・ボンデイング用Ｃｕ合金細線
JPS60124960A (ja) * 1983-12-09 1985-07-04 Sumitomo Electric Ind Ltd 半導体素子結線用線
JPH0547608A (ja) * 1991-08-12 1993-02-26 Showa Denko Kk 固体電解コンデンサの製造方法

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6199646A (ja) * 1984-10-20 1986-05-17 Tanaka Denshi Kogyo Kk 半導体素子のボンデイング用銅線
JPS6199645A (ja) * 1984-10-20 1986-05-17 Tanaka Denshi Kogyo Kk 半導体素子のボンデイング用銅線
JPS61113740A (ja) * 1984-11-09 1986-05-31 Tanaka Denshi Kogyo Kk 半導体素子のボンデイング用銅線
JPS63111151A (ja) * 1986-10-29 1988-05-16 Kobe Steel Ltd 電気および電子部品用銅合金及びその製造方法
JP2011146754A (ja) * 2007-01-15 2011-07-28 Nippon Steel Materials Co Ltd ボンディングワイヤの接合構造及びその形成方法
JP5937770B1 (ja) * 2015-05-26 2016-06-22 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
TWI550639B (zh) * 2015-05-26 2016-09-21 Nippon Micrometal Corp Connecting wires for semiconductor devices
JP2016225610A (ja) * 2015-05-26 2016-12-28 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
US10236272B2 (en) 2015-05-26 2019-03-19 Nippon Micrometal Corporation Cu alloy core bonding wire with Pd coating for semiconductor device
US10497663B2 (en) 2015-05-26 2019-12-03 Nippon Micrometal Corporation Cu alloy core bonding wire with Pd coating for semiconductor device
US10672733B2 (en) 2015-05-26 2020-06-02 Nippon Micrometal Corporation Cu alloy core bonding wire with Pd coating for semiconductor device
CN105543540A (zh) * 2015-12-26 2016-05-04 汕头华兴冶金设备股份有限公司 一种铜铬锆合金及其制备方法
CN105908012A (zh) * 2016-05-13 2016-08-31 四川鑫炬矿业资源开发股份有限公司 一种环保型无铅易切削抗热裂黄铜合金材料及其制备方法
CN112281018A (zh) * 2020-10-12 2021-01-29 中铁建电气化局集团康远新材料有限公司 一种高强度高导电铜锡合金接触线及其制备工艺

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