JPS6152332A - ボンデイングワイヤ− - Google Patents

ボンデイングワイヤ−

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Publication number
JPS6152332A
JPS6152332A JP59172449A JP17244984A JPS6152332A JP S6152332 A JPS6152332 A JP S6152332A JP 59172449 A JP59172449 A JP 59172449A JP 17244984 A JP17244984 A JP 17244984A JP S6152332 A JPS6152332 A JP S6152332A
Authority
JP
Japan
Prior art keywords
elements
wire
bonding wire
weight
kinds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59172449A
Other languages
English (en)
Other versions
JPH0547608B2 (ja
Inventor
Shigemi Yamane
山根　茂美
Koichiro Atsumi
幸一郎 渥美
Tetsuo Ando
安藤　鉄男
Noriaki Yagi
典章 八木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59172449A priority Critical patent/JPS6152332A/ja
Publication of JPS6152332A publication Critical patent/JPS6152332A/ja
Publication of JPH0547608B2 publication Critical patent/JPH0547608B2/ja
Granted legal-status Critical Current

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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
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  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Conductive Materials (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 【発明の技術分野１ 本発明は、銅系ボンディングワイヤーに間する。
［発明の技術的背景及びその問題点］ ｔＣやり、ＳＩ等の半導体素子の内部では、例えば、図
面に示すように、半導体チップ（１）及びリードフィン
ガー（２）が設けられており、これらをＩＩＡ径１０〜
１００μ程度のボンディングワイヤー（３）で結ぶ構造
となっている。
このボンディングワイヤー・（３）の接合方法としては
、まず、ワイヤーの先端をポール状に加熱溶融させ、次
にこのポール状の先端を半導体チップ（１）に圧接し、
更に彊を描くようにワイヤーを延ばし、３００〜３５０
℃に加熱されたリードフィンガー（２）にワイヤーの一
部を再度圧接し、切所することにより、半導体チップ（
１）とリードフィンガー（２）とを結１１ｉ＋するもの
である。
この種のボンディングワイヤーとして導電性。
ワイヤー伸び、ワイヤー強度、半導体チップとの接合強
度（以下ボール接合強度と称’１０）及びボール形成性
が要求されており、従来から主に金線が使用されている
。
しかし、近年価格及び導電性の点からボンディングワイ
ヤーとして、銅線を用いる試みがなされているが、銅線
を用いて熱圧接を行なうと、ボンディング強度が十分用
ない場合がしばしばあり、一方、この点を改善しようと
すると導電性が低下し、双方の特性を満足づる銅リード
ワイヤーが得られなかった。
［発明の目的］ 本発明は、ボール接合強度が良好で、かつ導電性が良好
な銅リードワイヤーを提供することを目的とする。
［発明の概要］ 本発明者らは、ボンディングワイヤーについて鋭意研究
した結果、ボンディング強度の低下は主に形成されたボ
ール中のガスにより生Ｉじることを見い出した。
即ち、半導体チップ上にこのボールが圧接された際、ガ
スによる空洞が接合部に位置し、接合強度を低下させる
こと及びこの現象は特に銅線で発生しやすいことを見い
出した。
本発明は、これらの知見をもとに完成されたものである
。
本発明は、Ｂｅ、Ｓｎ、Ｚｎ、Ｚｒ、Ａｇ。
Ｃｒ及びＦｅ　（第１添加元素群）から選択された２種
以上の元素を０．１〜２重１％含有し、かつＭｇ、Ｃａ
　、希土類元素、Ｔｉ　、　Ｈｆ　、Ｖ。
Ｎｂ、Ｔａ、Ｎｉ、Ｐｄ、Ｐｔ、Ａｇ、Ｃｄ。
Ｂ、Ｉｎ、Ｓｉ　、Ｇｅ、Ｉｎ、Ｓｉ　、Ｇｅ。
Ｐｂ　、Ｐ、Ｓｂ’、Ｂｉ　、Ｓｅ及びＴｅ　　（第２
添加元素群）から選択された１種又は２種以上の元素を
ｏ、ｏｏ１〜２重量％含有し、残部が実質的に銅である
ボンディングワイヤーを提供する。
即ち、これら添加元素は、合金中のＨ，Ｏ。
Ｎ、Ｃを固定し、Ｎ２．０２　、　Ｎ２及びＣＯガスの
発生を抑制する。
しかし、これらの添加量が多すぎると、導電性を低下さ
せ、一方、少すぎると効果が生じにくい。したがって、
第１添加元素群の成分範囲は、０．１〜２重量％、更に
は０．２〜１．８重量％が好ましく、第２添加元崇群の
成分範囲は、０．００１〜２重量％、更には０．０１〜
１重量％が好ましい。
第１添加元素のうちでは、Ａａ　、Ｃｒ及びＺｒ、第２
添加元素のうちではＭｇ、Ｙ、ラン　　［タノイド元素
及びＨｆが導電性をあまり低下させず、高いガス発生防
止効果を有する。
しかし、これらの添加量が多すぎると、＋？？Ｈ性を低
下させ、一方、少すぎると効果が生じにくい。したがつ
、Ａａ、Ｃｒ及びＺｒから選択された２種以上の元素の
成分範囲は、０．２〜１．８重量％、更には０．３〜１
．７重量％が好ましく、又、Ｍ（１、Ｙ、ランタノイド
元素及びＨｆから選択された１種又は２種以上の元素の
成分範囲は、０．０１〜１重量％、更には０．０５〜０
．２重量％が好ましい。なお、本発明のワイヤーは被覆
し−（使用しでもよい。
以上述べたＣツイヤ−の製造方法を次に述べる。
まず、成分元素を添加して溶解鋳造してインゴットを得
、次にこのインゴットを７００〜８００℃で熱間加］ニ
し、その後９００〜９６０℃で熱処理し、急冷摸、６０
％以上の冷間加工を施し、４００〜６００℃で熱処理を
施す。それにより所望のワイヤーが得られる。
発明の実施例］ 本発明の実施例について説明する。
第１表に示す成分のリードワイヤーを製造し、その特性
としＣＳＮ性、初期ボール硬度、ワイＩ７−の伸び、ワ
イヤー強度、ボール接合強度及びボール形成性を測定し
た。
初期ボール硬度は、ボール圧着時の硬度をいい、硬度が
低いほど圧着性は良好となる。又、ワイヤーの伸びは、
ワイヤーが破断するまでの伸びをいい、伸びが大きいほ
ど断線率が低い。
又、ボール接合強度は、熱圧着されているリードワイヤ
ーの接合部につり針状のカギをかけ、真横に引っばって
、接合部をせん断破壊させるまＣの荷Ｗ（ｇｒ）を測定
することによりえられる。
又、ボール形成性は、ワイヤーの先端がボール状に溶融
した際、酸化するかどうか、空洞ができるかどうか、ボ
ールの径のバラツキが大きいか小さいかという事を測定
することにより判断される。
まず、導電性に関しては、実施例（１）〜（５）及び比
較例（１）がＡｕｇより高い導電性を示し実用的である
。
又、初期ボール硬度に関して、実施例（１）〜（５）及
び比較例（１）、（３）、（４）はビッカース硬度１４
０以下を示し使用できる。
又、ワイヤーの伸びに関しては、実施例（１）〜（５）
及び比較例（１）、（３）がＡｕ線より大きい伸びを示
し有用である。
又、ワイヤー強度に関しては、実施例（１）〜（５）及
び比較例・（１）〜（３）がＡＵＩＩより大きい強度を
示し有用である。
又、ボール接合強度に関して、実施例（１）〜（５）及
び比較例（２）〜（４）は接合強度が６５（（ｉｆ）以
上あり有用である。
又、ボール形成性はすべて良好である。
以上述べた如く、各特性を総合的に考慮すると、本発明
の実施例（１）〜（５）は比較例（１）〜（４）に比べ
て優れている。
以　　下　　余　　白 ［発明の効果］ 本発明は、Ｂｅ、Ｓｎ、Ｚｎ、Ｚｒ、ＡＣＪ。
Ｃｒ及びＦｅ　　（第１添加元素群）から選択された２
種以上の元素を０．１〜２重量％含有し、かツＭｏ　、
　Ｃａ　、希土類元素、Ｔｉ　、Ｈｆ　、Ｖ。
Ｎｂ、Ｔａ、Ｎｉ　、Ｐｄ、Ｐｔ、Ａｇ、Ｃｃｌ。
Ｂ、Ｉｎ、Ｓｉ　、Ｇｅ、Ｉｎ、Ｓｉ　、Ｇｅ。
Ｐｂ　、Ｐ、Ｓｂ　、Ｂｉ　、Ｓｅ及びＴｏ　　（第２
添加元素群）から選択された１種又は２種以上の元素を
０．００１〜２重量％含有させることにより、ボール接
合強度が良好で、かつ導電性が良好な銅系リードワイレ
ーを提供できる。
【図面の簡単な説明】
図面は、半導体素子の一部切り欠き斜視図である。 １・・・半導体チップ ２・・・リードフィンガー ３・・・ボンディングワイヤー ４・・・樹脂モールド

Claims (2)

    【特許請求の範囲】
  1. （１）Ｂｅ、Ｓｎ、Ｚｎ、Ｚｒ、Ａｇ、Ｃｒ及びＦｅ（
    第１添加元素群）から選択された２種以上の元素を０．
    １重量％〜２重量％含有し、かつＭｇ、Ｃａ、希土類元
    素、Ｔｉ、Ｈｆ、Ｖ、Ｎｂ、Ｔａ、Ｎｉ、Ｐｄ、Ｐｔ、
    Ａｕ、Ｃｄ、Ｂ、Ｉｎ、Ｓｉ、Ｇｅ、Ｉｎ、Ｓｉ、Ｇｅ
    、Ｐｂ、Ｐ、Ｓｂ、Ｂｉ、Ｓｅ及びＴｅ（第２添加元素
    群）から選択された１種又は２種以上の元素を０．００
    １〜２重量％含有し、残部が実質的に銅であるボンディ
    ングワイヤー。
  2. （２）Ａｇ、Ｃｒ、及びＺｒから選択された２種以上の
    元素を０．２〜１．８重量％含有し、かつＭｇ、Ｙ、ラ
    ンタノイド元素、Ｈｆから選択された１種又は２種以上
    の元素を０．０１〜１重量％含有し、残部が実質的に銅
    である特許請求の範囲第１項に記載のボンデングワイヤ
    ー。
JP59172449A 1984-08-21 1984-08-21 ボンデイングワイヤ− Granted JPS6152332A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59172449A JPS6152332A (ja) 1984-08-21 1984-08-21 ボンデイングワイヤ−

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59172449A JPS6152332A (ja) 1984-08-21 1984-08-21 ボンデイングワイヤ−

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP6179653A Division JP2501306B2 (ja) 1994-07-08 1994-07-08 半導体装置

Publications (2)

Publication Number Publication Date
JPS6152332A true JPS6152332A (ja) 1986-03-15
JPH0547608B2 JPH0547608B2 (ja) 1993-07-19

Family

ID=15942188

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59172449A Granted JPS6152332A (ja) 1984-08-21 1984-08-21 ボンデイングワイヤ−

Country Status (1)

Country Link
JP (1) JPS6152332A (ja)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6199645A (ja) * 1984-10-20 1986-05-17 Tanaka Denshi Kogyo Kk 半導体素子のボンデイング用銅線
JPS63171841A (ja) * 1988-01-11 1988-07-15 Furukawa Electric Co Ltd:The 電子機器用銅合金
JPH01188641A (ja) * 1988-01-21 1989-07-27 Yazaki Corp 高強度高導電性銅合金
JPH01272733A (ja) * 1988-04-25 1989-10-31 Mitsubishi Shindoh Co Ltd 半導体装置用Ｃｕ合金製リードフレーム材
JPH01312047A (ja) * 1988-06-13 1989-12-15 Yazaki Corp 高力高導電性銅合金の製造方法
JPH0297632A (ja) * 1988-09-30 1990-04-10 Sumitomo Electric Ind Ltd 電気・電子機器用銅合金細線
JPH04214829A (ja) * 1990-11-30 1992-08-05 Tatsuta Electric Wire & Cable Co Ltd 高力高導電性銅合金細線の製造方法　　　　
CN100425717C (zh) * 2006-08-16 2008-10-15 苏州有色金属加工研究院 引线框架用铜合金及其制造方法
CN104328304A (zh) * 2014-11-11 2015-02-04 芜湖市民泰铜业有限责任公司 一种高强高导导线用铜合金及其制备方法
JP5937770B1 (ja) * 2015-05-26 2016-06-22 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
TWI550639B (zh) * 2015-05-26 2016-09-21 Nippon Micrometal Corp Connecting wires for semiconductor devices
JP2016225610A (ja) * 2015-05-26 2016-12-28 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
CN111961913A (zh) * 2020-08-28 2020-11-20 河北临泰电子科技有限公司 一种键合引线及其加工工艺
CN113549785A (zh) * 2021-07-27 2021-10-26 四川威纳尔特种电子材料有限公司 一种键合铜银合金线及其制备方法，应用

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6199645A (ja) * 1984-10-20 1986-05-17 Tanaka Denshi Kogyo Kk 半導体素子のボンデイング用銅線
JPS63171841A (ja) * 1988-01-11 1988-07-15 Furukawa Electric Co Ltd:The 電子機器用銅合金
JPH0461056B2 (ja) * 1988-01-21 1992-09-29 Yazaki Corp
JPH01188641A (ja) * 1988-01-21 1989-07-27 Yazaki Corp 高強度高導電性銅合金
JPH01272733A (ja) * 1988-04-25 1989-10-31 Mitsubishi Shindoh Co Ltd 半導体装置用Ｃｕ合金製リードフレーム材
JPH0480102B2 (ja) * 1988-04-25 1992-12-17 Mitsubishi Shindo Kk
JPH0527697B2 (ja) * 1988-06-13 1993-04-22 Yazaki Corp
JPH01312047A (ja) * 1988-06-13 1989-12-15 Yazaki Corp 高力高導電性銅合金の製造方法
JPH0297632A (ja) * 1988-09-30 1990-04-10 Sumitomo Electric Ind Ltd 電気・電子機器用銅合金細線
JPH04214829A (ja) * 1990-11-30 1992-08-05 Tatsuta Electric Wire & Cable Co Ltd 高力高導電性銅合金細線の製造方法　　　　
CN100425717C (zh) * 2006-08-16 2008-10-15 苏州有色金属加工研究院 引线框架用铜合金及其制造方法
CN106498227A (zh) * 2014-11-11 2017-03-15 芜湖市民泰铜业有限责任公司 一种铜合金的制备方法
CN104328304A (zh) * 2014-11-11 2015-02-04 芜湖市民泰铜业有限责任公司 一种高强高导导线用铜合金及其制备方法
CN106544533A (zh) * 2014-11-11 2017-03-29 芜湖市民泰铜业有限责任公司 一种高强高导导线用铜合金的制备方法
JP5937770B1 (ja) * 2015-05-26 2016-06-22 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
JP2016225610A (ja) * 2015-05-26 2016-12-28 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
TWI550639B (zh) * 2015-05-26 2016-09-21 Nippon Micrometal Corp Connecting wires for semiconductor devices
US10236272B2 (en) 2015-05-26 2019-03-19 Nippon Micrometal Corporation Cu alloy core bonding wire with Pd coating for semiconductor device
US10497663B2 (en) 2015-05-26 2019-12-03 Nippon Micrometal Corporation Cu alloy core bonding wire with Pd coating for semiconductor device
US10672733B2 (en) 2015-05-26 2020-06-02 Nippon Micrometal Corporation Cu alloy core bonding wire with Pd coating for semiconductor device
CN111961913A (zh) * 2020-08-28 2020-11-20 河北临泰电子科技有限公司 一种键合引线及其加工工艺
CN111961913B (zh) * 2020-08-28 2022-01-07 河北临泰电子科技有限公司 一种键合引线及其加工工艺
CN113549785A (zh) * 2021-07-27 2021-10-26 四川威纳尔特种电子材料有限公司 一种键合铜银合金线及其制备方法，应用
CN113549785B (zh) * 2021-07-27 2022-04-26 四川威纳尔特种电子材料有限公司 一种键合铜银合金线及其制备方法，应用

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