JPH0547609B2 - - Google Patents

Info

Publication number
JPH0547609B2
JPH0547609B2 JP59172450A JP17245084A JPH0547609B2 JP H0547609 B2 JPH0547609 B2 JP H0547609B2 JP 59172450 A JP59172450 A JP 59172450A JP 17245084 A JP17245084 A JP 17245084A JP H0547609 B2 JPH0547609 B2 JP H0547609B2
Authority
JP
Japan
Prior art keywords
kinds
bonding wire
rare earth
heat treated
balance essentially
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP59172450A
Other languages
English (en)
Other versions
JPS6152333A (en
Inventor
Shigemi Yamane
Koichiro Atsumi
Tetsuo Ando
Noriaki Yagi
Original Assignee
Tokyo Shibaura Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co filed Critical Tokyo Shibaura Electric Co
Priority to JP59172450A priority Critical patent/JPH0547609B2/ja
Publication of JPS6152333A publication Critical patent/JPS6152333A/ja
Publication of JPH0547609B2 publication Critical patent/JPH0547609B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/43Manufacturing methods
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/43Manufacturing methods
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/43Manufacturing methods
    • H01L2224/438Post-treatment of the connector
    • H01L2224/43848Thermal treatments, e.g. annealing, controlled cooling
    • HELECTRICITY
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147Copper (Cu) as principal constituent
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00011Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/01004Beryllium [Be]
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    • H01L2924/01005Boron [B]
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    • H01L2924/01006Carbon [C]
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    • H01L2924/01023Vanadium [V]
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    • H01L2924/01028Nickel [Ni]
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    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
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    • H01L2924/01073Tantalum [Ta]
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    • H01L2924/01082Lead [Pb]
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    • H01L2924/01083Bismuth [Bi]
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    • H01L2924/011Groups of the periodic table
    • H01L2924/01105Rare earth metals
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    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
JP59172450A 1984-08-21 1984-08-21 Expired - Fee Related JPH0547609B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59172450A JPH0547609B2 (ja) 1984-08-21 1984-08-21

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59172450A JPH0547609B2 (ja) 1984-08-21 1984-08-21

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP6145826A Division JP2501305B2 (ja) 1994-06-06 1994-06-06 半導体装置

Publications (2)

Publication Number Publication Date
JPS6152333A JPS6152333A (en) 1986-03-15
JPH0547609B2 true JPH0547609B2 (ja) 1993-07-19

Family

ID=15942209

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59172450A Expired - Fee Related JPH0547609B2 (ja) 1984-08-21 1984-08-21

Country Status (1)

Country Link
JP (1) JPH0547609B2 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007077612A1 (ja) 2005-12-28 2007-07-12 Sumitomo Metal Mining Co., Ltd. 多孔質バルブ金属薄膜、その製造方法および薄膜キャパシタ
CN104593618A (zh) * 2015-01-06 2015-05-06 湖南金龙国际铜业有限公司 高导超微合金再生铜杆及其精炼方法
CN110042273A (zh) * 2019-05-29 2019-07-23 南京达迈科技实业有限公司 一种高强高导铜合金管及其制备方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6199645A (en) * 1984-10-20 1986-05-17 Tanaka Denshi Kogyo Kk Copper alloy for bonding of semiconductor device
JPS6199646A (en) * 1984-10-20 1986-05-17 Tanaka Denshi Kogyo Kk Copper wire for bonding of semiconductor device
JPS61113740A (en) * 1984-11-09 1986-05-31 Tanaka Denshi Kogyo Kk Bonding use copper wire of semiconductor element
JPH0635633B2 (ja) * 1986-10-29 1994-05-11 株式会社神戸製鋼所 電気および電子部品用銅合金及びその製造方法
US8247911B2 (en) * 2007-01-15 2012-08-21 Nippon Steel Materials Co., Ltd. Wire bonding structure and method for forming same
JP5937770B1 (ja) * 2015-05-26 2016-06-22 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
WO2016189752A1 (ja) 2015-05-26 2016-12-01 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
TWI628671B (zh) * 2015-05-26 2018-07-01 日鐵住金新材料股份有限公司 Bonding wire for semiconductor device
CN105543540B (zh) * 2015-12-26 2017-08-29 汕头华兴冶金设备股份有限公司 一种铜铬锆合金及其制备方法
CN105908012A (zh) * 2016-05-13 2016-08-31 四川鑫炬矿业资源开发股份有限公司 一种环保型无铅易切削抗热裂黄铜合金材料及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59139662A (en) * 1983-01-31 1984-08-10 Mitsubishi Metal Corp Alloy thin wire for wire bonding of semiconductor device
JPS60124960A (en) * 1983-12-09 1985-07-04 Sumitomo Electric Ind Ltd Wire for connecting semiconductor element
JPH0547608A (ja) * 1991-08-12 1993-02-26 Showa Denko Kk 固体電解コンデンサの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59139662A (en) * 1983-01-31 1984-08-10 Mitsubishi Metal Corp Alloy thin wire for wire bonding of semiconductor device
JPS60124960A (en) * 1983-12-09 1985-07-04 Sumitomo Electric Ind Ltd Wire for connecting semiconductor element
JPH0547608A (ja) * 1991-08-12 1993-02-26 Showa Denko Kk 固体電解コンデンサの製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007077612A1 (ja) 2005-12-28 2007-07-12 Sumitomo Metal Mining Co., Ltd. 多孔質バルブ金属薄膜、その製造方法および薄膜キャパシタ
CN104593618A (zh) * 2015-01-06 2015-05-06 湖南金龙国际铜业有限公司 高导超微合金再生铜杆及其精炼方法
CN110042273A (zh) * 2019-05-29 2019-07-23 南京达迈科技实业有限公司 一种高强高导铜合金管及其制备方法
WO2020237943A1 (zh) * 2019-05-29 2020-12-03 南京达迈科技实业有限公司 一种高强高导铜合金管及其制备方法

Also Published As

Publication number Publication date
JPS6152333A (en) 1986-03-15

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