JPH04184946A - 半導体装置用銅合金極細線及び半導体装置 - Google Patents

半導体装置用銅合金極細線及び半導体装置

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Publication number
JPH04184946A
JPH04184946A JP2314677A JP31467790A JPH04184946A JP H04184946 A JPH04184946 A JP H04184946A JP 2314677 A JP2314677 A JP 2314677A JP 31467790 A JP31467790 A JP 31467790A JP H04184946 A JPH04184946 A JP H04184946A
Authority
JP
Japan
Prior art keywords
wire
copper
copper alloy
semiconductor device
ppm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2314677A
Other languages
English (en)
Inventor
Toshinori Ishii
利昇 石井
Tamotsu Mori
保 森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
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Mitsubishi Materials Corp
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Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Priority to JP2314677A priority Critical patent/JPH04184946A/ja
Publication of JPH04184946A publication Critical patent/JPH04184946A/ja
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、半導体素子のチップ電極と外部リードを接
続するために用いる半導体装置用銅合金極細線及び半導
体装置に関する。
〔従来の技術〕
従来、半導体装置の組立てにおいて、半導体素子と外部
リードをボンディングする金属細線として、金線、アル
ミ線および銅線が用いられている。
この中で銅線は、樹脂モールド時においても、金線並み
の信頼性が得られること、金線に比べ安価でコスト的に
メリットのあること、また銅系り−ドフレームにダイレ
クトにボンディングすることができ、さらに大きなコス
トメリットがあることで、近年使用量が大きく伸びつつ
ある。又、これらの要求に応じるため、非常に高純度な
銅線や、耐熱性、耐腐食性を向上させるために微量元素
を添加した様々な銅線か提案されてきた。
〔発明が解決しようとする課題〕
本発明者等は、これらの従来提案された種々の半導体装
置用銅合金極細線について検討し１＝結果、これらの銅
線は、ある程度の常温及び高温強度を有するものの、最
近の高集積化に伴う問題点、すなわち、多ビンで長ルー
プの場合に、たれ、曲がりを生じないというループ形状
に関して必要とされる特性ついては十分であるとはいい
難いという結論を得た。
このため、例えば、ピッチ１５０μｌ以下のファインピ
ッチで、ループ長３．０ｘｍ以上の長ループを要求され
た場合、銅線の接触ならびに銅線のたれの発生を防ぎき
れないのが現状であり、仮に手直しを加えてモールディ
ングできたとしても、各種の信頼性テストをクリアする
ことができなかった。
本発明は、上記従来の半導体装置用銅合金のもつ問題点
を解決すへくなされたもので、ファインピッチで長ルー
プの場合にも、銅線の接触又はたれを生ずることがなく
、信頼性の高い半導体銅合金線を提供することを目的と
するものである。
〔課題を解決するための手段； 第１請求項に記載の発明は、０．１〜５０ｗｔ・ｐｐｍ
　（以下、全て組成比は重量比とする）のＩｒと、５　
ｐｐｍ以下の不可避不純物を含み、残部が銅からなるこ
とを特徴とする半導体装置用銅合金極細線であり、第２
請求項に記載の発明は、０．１〜５０ｐｐｍのＩｒと、
４　ｐｐｍ以下の不可避不純物とを含み、かつ、Ｂｅ　
、Ｃｒ　、Ｓｎ　、Ｚｎ　、Ｚｒ　、Ａｇ　。
Ｍｇ、Ｃａ、希土類元素、Ｔｉ　、Ｈｆ　、Ｖ、Ｎｂ　
、Ｔａ　。
Ｎｉ　、Ｐｄ　、Ｐｔ　、Ａｕ　、Ｃｄ　、Ｂ、Ｉｎ　
、Ｓｉ　、Ｇｅ　。
ｐｂ　、ｐ、ｓｂ　、およびＢｉからなる元素群から選
択された１種もしくは２種以上の元素を合計で０゜１　
ｐｐｍ〜０５％含有し、残部が銅からなることを特徴と
する半導体装置用銅合金極細線であり、 第３の請求項に記載の発明は、請求項１もしくは２に記
載の銅合金極細線をボンディングワイヤとして用いたこ
とを特徴とする半導体装置である。
〔作用〕
本発明における成分元素の効果ならびにその成分の規定
理由は以下の通りである。
Ｉｒは本発明に必須の元素であり、これを適量Ｃｕに添
加したところ、従来品と比べ常温及び高温の破断強度が
上昇するとともに、変形初期において加工硬化が生じに
くく、金合金線と似た挙動をとる様になる。
金合金線においては、その弾性が銅合金線に比べて著し
く小さいため、通常、ループ形状が第１図（ａ　）とな
る。これを添加元素やループコントロールで第１図（ｂ
　）の様な形状とすることにより、曲がりを軽減できる
ことが分かっている。一方、銅合金線は金合金線に比べ
て弾性が強いため、−般的にループ形状は、ボンディン
グ装置によるボンディング工程において第２図に示す挙
動を経て、最終的に第１図（ｃ　）の様な形状となる。
つまり、従来品の様に変形初期において、加工硬化が生
じやすいと、第１図（ｂ　）の様なループ形状となる。
弾性の大きな銅合金線においては、第２図に示す様にル
ープ形成途中でループが反対方向にスプリ　　　１ング
バツクする現象がみられ、この際に曲がり、たれが発生
することがわかった。
従って、本発明では、従来品より変形初期において加工
硬化を抑えて金合金線の様なループ形状を得、これによ
りループ形成過程における不確定要素を軽減させ、曲が
り、たれの発生を減少させることができる。
次に、成分の規定理由について述べる。
Ｉｒは、その添加量が、０．ｌｐｐｍ以下ではループ形
状に変化が認められず、逆に５０　ｐｐ＠以上では、ボ
ールの形成能に劣化が認められ、良好なボンディングが
できなくなる。
また、Ｉｒを所定量含有させたＣｕにさらにＢｅ　、Ｃ
ｒ　、Ｓｎ　：Ｚｎ　、Ｚｒ　、Ａｇ　、Ｍｇ　、Ｃａ
　、希土類元素、Ｔｉ　、Ｈｆ　、Ｖ、Ｎｂ　、Ｔａ　
、Ｎｉ　、Ｐｄ　、Ｐｔ　。
Ａｕ　、Ｃｄ　、Ｂ、Ｉｎ　、Ｓｉ　、Ｇｅ　、の１種
もしくは、２種以上を微量添加することも良好なループ
形状を有しながら強度向上を図ることに有効である。
さらにＰ’ｂ　、Ｐ、Ｓｂ　、Ｂｉのような、これまで
洞中に存在した場合に硬度を上げ、耐食性を劣化させる
とされていた元素群においてもＩｒとの共存下において
は、上述の様な問題が生じないばかりか、良好なループ
形状を有しながら、強度向上を図り得ることもわかった
。
しかし、これらの元素の添加量が１種もしくは２種以上
で合計０．ｌｐｐｍ以下であれば、強度向上効果はみら
れず、又、０．５％以上になると、Ｉｒの良好なループ
形状を得る効果と失わせてしまうばかりか、ボール形成
能を劣化させてしまうことになる。従って、これらの元
素の添加範囲は総量で０．ｌｐｐｍ以下、５％を満たす
ものでなくてはならない。
〔実施例〕
純度９９．９９９５％の高純度銅に、第１表の添加元素
を真空溶解により添加した後、インゴットを作製し、伸
線加工を施して直径２５μ！の銅細線とした。この後、
熱処理によりこの銅伸線の常温における破断伸び率を１
２％となる様調整し、ボンディング用銅合金線とした。
第２表には、このホンディング用銅合金線の常温におけ
る引張試験値を示す。さらに、ネールヘッド式のボンデ
ィング装置により、第３図に示す様な状態でループを形
成し、この場合のループ高さＨｌおよびループ中央での
高さＨ２および第４図に示すたれ、第５図に示す様な曲
りの発生率を各１０００ワイヤーについて調査し、これ
らの値もあ。
わせで第２表に示す。
−一以下余白−− 〔発明の効果〕 以上説明したように、第１請求項に記載の発明は、０．
１〜５０ｐｐｍのＩｒと、ｓ　ｐｐｍ以下の不可避不純
物を含み、残部が銅からなることを特徴とする半導体装
置用銅合金極細線であり、第２請求項に記載の発明は、
０　、　１〜５０ｐｐｍのＩｒと、５　ｐｐｍ以下の不
可避不純物とを含み、かつ、Ｂｅ。
Ｃｒ　、Ｓｎ　、Ｚｎ　、Ｚｒ　、Ａｇ　、Ｍｇ　、Ｃ
ａ　、希土類元素、Ｔｉ　、Ｈｆ　、Ｖ、Ｎｂ　、Ｔａ
　、Ｎｉ　、Ｐｄ　、Ｐｔ　。
Ａｕ　、Ｃｄ　、Ｂ、Ｉｎ　、Ｓｉ　、Ｇｅ　、Ｐｂ　
、Ｐ、Ｓｂ　、およびＢｉの元素群から選択された１種
もしくは２種以上の元素を合計で０．ｌｐｐｍ〜０．５
％含有し、残部が銅からなることを特徴とする半導体装
置用銅合金極細線であるので、ボンディングの状況がフ
ァインピッチで長ループである場合にも、曲り、たれを
生じることがなく、良好なループを形成することができ
るものである。また、第３請求項に記載の半導体装置は
上記の合金極細線を用いているので、ホンディング工程
におけるエラーの発生がなく信頼性の高い半導体素子を
提供することができるものである。
【図面の簡単な説明】
第１図はボンディング用銅合金線の典型的なループ形状
を示す正面図、第２図はホンディング用銅合金線のルー
プ形成過程を示す正面図、第３図は実施例に示すボンデ
ィング性評価時のループ形状を示す正面図、第４図にル
ープ形成時のたれを示す正面図、第５図はループ形成時
の曲りを示す平面図である。

Claims (3)

    【特許請求の範囲】
  1. （１）０．１〜５０ｗｔ・ｐｐｍのＩｒと、５ｗｔ・ｐ
    ｐｍ以下の不可避不純物を含み、残部が銅からなること
    を特徴とする半導体装置用銅合金極細線。
  2. （２）０．１〜５０ｐｐｍのＩｒと、５ｗｔ・ｐｐｍ以
    下の不可避不純物とを含み、 かつ、Ｂｅ、Ｃｒ、Ｓｎ、Ｚｎ、Ｚｒ、Ａｇ、Ｍｇ、Ｃ
    ａ、希土類元素、Ｔｉ、Ｈｆ、Ｖ、Ｎｂ、Ｔａ、Ｎｉ、
    Ｐｄ、Ｐｔ、Ａｕ、Ｃｄ、Ｂ、Ｉｎ、Ｓｉ、Ｇｅ、Ｐｂ
    、Ｐ、Ｓｂ、およびＢｉからなる元素群から選択された
    １種もしくは２種以上の元素を合計で０．１ｗｔ・ｐｐ
    ｍ〜０．５ｗｔ％含有し、 残部が銅からなることを特徴とする半導体装置用銅合金
    極細線。
  3. （３）請求項１もしくは２に記載の銅合金極細線をボン
    ディングワイヤとして用いたことを特徴とする半導体装
    置。
JP2314677A 1990-11-20 1990-11-20 半導体装置用銅合金極細線及び半導体装置 Pending JPH04184946A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2314677A JPH04184946A (ja) 1990-11-20 1990-11-20 半導体装置用銅合金極細線及び半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2314677A JPH04184946A (ja) 1990-11-20 1990-11-20 半導体装置用銅合金極細線及び半導体装置

Publications (1)

Publication Number Publication Date
JPH04184946A true JPH04184946A (ja) 1992-07-01

Family

ID=18056223

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JPH04184946A (ja)

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KR100702662B1 (ko) * 2005-02-18 2007-04-02 엠케이전자 주식회사 반도체 패키징용 구리 본딩 와이어
EP2221861A1 (en) * 2007-07-24 2010-08-25 Nippon Steel Chemical Co., Ltd. Semiconductor device bonding wire and wire bonding method
CN103137235A (zh) * 2011-12-01 2013-06-05 贺利氏材料科技公司 用于微电子装置中接合的二次合金1n铜线
CN103137237A (zh) * 2011-12-01 2013-06-05 贺利氏材料科技公司 用于微电子装置中接合的具有痕量加入物的3n铜线
CN103137236A (zh) * 2011-12-01 2013-06-05 贺利氏材料科技公司 用于微电子装置中接合的合金2n铜线
JP2016122700A (ja) * 2014-12-24 2016-07-07 タツタ電線株式会社 銅ボンディングワイヤ
WO2017221434A1 (ja) * 2016-06-20 2017-12-28 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ

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KR100702662B1 (ko) * 2005-02-18 2007-04-02 엠케이전자 주식회사 반도체 패키징용 구리 본딩 와이어
US9112059B2 (en) 2007-07-24 2015-08-18 Nippon Steel & Sumikin Materials Co., Ltd. Bonding wire for semiconductor device
EP2221861A1 (en) * 2007-07-24 2010-08-25 Nippon Steel Chemical Co., Ltd. Semiconductor device bonding wire and wire bonding method
EP2221861A4 (en) * 2007-07-24 2012-06-20 Nippon Steel Materials Co Ltd SEMICONDUCTOR DEVICE CONNECTING WIRE AND WIRE CONNECTING METHOD
EP2960931A3 (en) * 2007-07-24 2016-04-27 Nippon Steel & Sumikin Materials Co., Ltd. Copper bond wire
EP2950335A3 (en) * 2007-07-24 2016-03-30 Nippon Steel & Sumikin Materials Co., Ltd. Semiconductor device bonding wire and wire bonding method
CN103137235A (zh) * 2011-12-01 2013-06-05 贺利氏材料科技公司 用于微电子装置中接合的二次合金1n铜线
US20130140084A1 (en) * 2011-12-01 2013-06-06 Heraeus Materials Technology Gmbh & Co. Kg Alloyed 2N Copper Wires for Bonding in Microelectronics Devices
CN103137236A (zh) * 2011-12-01 2013-06-05 贺利氏材料科技公司 用于微电子装置中接合的合金2n铜线
CN103137237A (zh) * 2011-12-01 2013-06-05 贺利氏材料科技公司 用于微电子装置中接合的具有痕量加入物的3n铜线
US9589694B2 (en) 2011-12-01 2017-03-07 Heraeus Deutschland GmbH & Co. KG Alloyed 2N copper wires for bonding in microelectronics devices
JP2016122700A (ja) * 2014-12-24 2016-07-07 タツタ電線株式会社 銅ボンディングワイヤ
WO2017221434A1 (ja) * 2016-06-20 2017-12-28 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
JP2019149559A (ja) * 2016-06-20 2019-09-05 日鉄マイクロメタル株式会社 半導体装置用銅合金ボンディングワイヤ

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