JP2016122700A - 銅ボンディングワイヤ - Google Patents
銅ボンディングワイヤ Download PDFInfo
- Publication number
- JP2016122700A JP2016122700A JP2014260900A JP2014260900A JP2016122700A JP 2016122700 A JP2016122700 A JP 2016122700A JP 2014260900 A JP2014260900 A JP 2014260900A JP 2014260900 A JP2014260900 A JP 2014260900A JP 2016122700 A JP2016122700 A JP 2016122700A
- Authority
- JP
- Japan
- Prior art keywords
- mass
- bonding wire
- copper
- fab
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/432—Mechanical processes
- H01L2224/4321—Pulling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/438—Post-treatment of the connector
- H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/45114—Thallium (Tl) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48507—Material at the bonding interface comprising an intermetallic compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
- H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
- H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
Abstract
【解決手段】金の含有量が0.5質量%以上5.0質量%以下、硫黄の含有量が1質量ppm以上15質量ppm以下であり、残部が銅及び不可避不純物からなるものとする。
Description
(変更例)
上記した実施形態では、金及び硫黄を含有する銅ボンディングワイヤについて説明したが、金及び硫黄に加えてパラジウム及び白金の少なくとも一方を更に含有してもよい。0.5質量%〜5.0質量%の金とともにパラジウムや白金を複合して添加することで1st接合部の耐食性が向上する。
ワイヤボンダで線径の1.7倍の大きさのFABを窒素ガス雰囲気でそれぞれ100個作製し、FABのワイヤと平行な方向と直角な方向の直径を測定した。作製した100個のFAB全てにおいて、平行な方向と直角な方向の直径の差が2μm以下であれば真球に近いと考えて「A」、2μmを超え10μm以下のFABが1個でもあれば「B」、10μmを超えるか、球状にならないFABが1個でもあれば真球度が低いと考えて「D」とした。
ワイヤボンダで作製した100個のFABを電極に押し当てて1st接合部の直径がFABの直径の1.5倍の大きさになるようにボンディングを行い、1st接合部の直交する2方向の直径を測定した。100個のFAB全てにおいて1st接合部の2方向の直径の差が5μm以下であれば「A」、5μmを超えて15μm以下の1st接合部が1個でもあれば「B」、15μmを超える1st接合部が1個でもあれば真円性が低くファインピッチ用途に不適と考えて「D」とした。
3本のボンディングワイヤを150℃の炉中で30秒間加熱し、加熱前後のワイヤの表面に存在する酸化銅の厚さをSERA法(連続電気化学還元法)で測定した。加熱後の3本のワイヤ表面に存在する酸化銅の厚さの平均値が加熱前の2倍以下であれば、耐食性が良好と考えて「A」、2倍を超えると耐食性に問題があると考えて「D」とした。
10本のボンディングワイヤを電極へボンディングした後、温度130℃で湿度85%の試験槽中に168時間挿入し、168時間経過後のシェア強度SSaを初期のシェア強度SSbで除した割合R(=(SSa/SSb)×100)を用いて評価した。Rの平均値が70%以上なら耐食性があると考えて「A」、70%未満となれば耐食性に問題があると考えて「D」とした。
作製した各ボンディングワイヤの金、パラジウム、及び白金の含有量の合計が、5.0質量%以下であれば高価な貴金属の含有量が低くボンディングワイヤの製造コストを抑えることができると考えて「A」、5.0質量%を越えると高価な貴金属の使用量が多くなりワイヤが高価となるため「D」とした。
上記(1)〜(5)の評価が、すべて「A」であれば「A」、ひとつでも「B」があると「B」、またひとつでも「D」があると「D」とした。
Claims (4)
- 金の含有量が0.5質量%以上5.0質量%以下、硫黄の含有量が1質量ppm以上15質量ppm以下であり、残部が銅及び不可避不純物からなることを特徴とする銅ボンディングワイヤ。
- 金の含有量が0.5質量%以上5.0質量%以下、硫黄の含有量が1質量ppm以上15質量ppm以下、銀の含有量が25質量ppm以下であり、残部が銅及び不可避不純物からなることを特徴とする銅ボンディングワイヤ。
- 金の含有量が0.5質量%以上、硫黄の含有量が1質量ppm以上15質量ppm以下、であり、更に、パラジウム及び白金の少なくとも一方を含有し、金、パラジウム、及び白金の含有量の合計が5.0質量%以下であり、残部が銅及び不可避不純物からなることを特徴とする銅ボンディングワイヤ。
- 金の含有量が0.5質量%以上、硫黄の含有量が1質量ppm以上15質量ppm以下、銀の含有量が25質量ppm以下であり、更に、パラジウム及び白金の少なくとも一方を含有し、金、パラジウム、及び白金の含有量の合計が5.0質量%以下であり、残部が銅及び不可避不純物からなることを特徴とする銅ボンディングワイヤ。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014260900A JP6422768B2 (ja) | 2014-12-24 | 2014-12-24 | 銅ボンディングワイヤの製造方法 |
CN201580053821.4A CN107112252A (zh) | 2014-12-24 | 2015-12-07 | 铜焊线 |
PCT/JP2015/084271 WO2016104121A1 (ja) | 2014-12-24 | 2015-12-07 | 銅ボンディングワイヤ |
KR1020177019875A KR20170097141A (ko) | 2014-12-24 | 2015-12-07 | 구리 본딩 와이어 |
TW104142165A TW201633483A (zh) | 2014-12-24 | 2015-12-15 | 銅接合導線 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014260900A JP6422768B2 (ja) | 2014-12-24 | 2014-12-24 | 銅ボンディングワイヤの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016122700A true JP2016122700A (ja) | 2016-07-07 |
JP6422768B2 JP6422768B2 (ja) | 2018-11-14 |
Family
ID=56150151
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014260900A Active JP6422768B2 (ja) | 2014-12-24 | 2014-12-24 | 銅ボンディングワイヤの製造方法 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP6422768B2 (ja) |
KR (1) | KR20170097141A (ja) |
CN (1) | CN107112252A (ja) |
TW (1) | TW201633483A (ja) |
WO (1) | WO2016104121A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3667709B1 (en) * | 2017-08-09 | 2024-05-15 | NIPPON STEEL Chemical & Material Co., Ltd. | Cu alloy bonding wire for semiconductor device |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61163194A (ja) * | 1985-01-09 | 1986-07-23 | Toshiba Corp | 半導体素子用ボンデイング線 |
JPH04184946A (ja) * | 1990-11-20 | 1992-07-01 | Mitsubishi Materials Corp | 半導体装置用銅合金極細線及び半導体装置 |
JP2011003745A (ja) * | 2009-06-18 | 2011-01-06 | Sumitomo Metal Mining Co Ltd | Cuボンディングワイヤ |
JP2012222194A (ja) * | 2011-04-11 | 2012-11-12 | Sumitomo Metal Mining Co Ltd | 銅ボンディングワイヤ |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5219316B1 (ja) * | 2012-09-28 | 2013-06-26 | 田中電子工業株式会社 | 半導体装置接続用銅白金合金細線 |
US20140302342A1 (en) * | 2013-04-04 | 2014-10-09 | Hitachi Metals, Ltd. | Copper wire and method of manufacturing the same |
-
2014
- 2014-12-24 JP JP2014260900A patent/JP6422768B2/ja active Active
-
2015
- 2015-12-07 KR KR1020177019875A patent/KR20170097141A/ko unknown
- 2015-12-07 CN CN201580053821.4A patent/CN107112252A/zh active Pending
- 2015-12-07 WO PCT/JP2015/084271 patent/WO2016104121A1/ja active Application Filing
- 2015-12-15 TW TW104142165A patent/TW201633483A/zh unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61163194A (ja) * | 1985-01-09 | 1986-07-23 | Toshiba Corp | 半導体素子用ボンデイング線 |
JPH04184946A (ja) * | 1990-11-20 | 1992-07-01 | Mitsubishi Materials Corp | 半導体装置用銅合金極細線及び半導体装置 |
JP2011003745A (ja) * | 2009-06-18 | 2011-01-06 | Sumitomo Metal Mining Co Ltd | Cuボンディングワイヤ |
JP2012222194A (ja) * | 2011-04-11 | 2012-11-12 | Sumitomo Metal Mining Co Ltd | 銅ボンディングワイヤ |
Non-Patent Citations (1)
Title |
---|
三宅保彦: "工業材料としての高純度銅の製造と応用", 日本金属学会会報, vol. 第31巻,第4号, JPN6017037710, 10 August 1992 (1992-08-10), JP, pages 267 - 276, ISSN: 0003891029 * |
Also Published As
Publication number | Publication date |
---|---|
TW201633483A (zh) | 2016-09-16 |
WO2016104121A1 (ja) | 2016-06-30 |
JP6422768B2 (ja) | 2018-11-14 |
KR20170097141A (ko) | 2017-08-25 |
CN107112252A (zh) | 2017-08-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI700754B (zh) | 半導體裝置用接合線 | |
TWI427719B (zh) | The joint structure of the joining wire and its forming method | |
JP5616165B2 (ja) | 銀ボンディングワイヤ | |
KR101536554B1 (ko) | 본딩용 와이어 | |
WO2013018238A1 (ja) | ボールボンディングワイヤ | |
JP5270467B2 (ja) | Cuボンディングワイヤ | |
JP5671512B2 (ja) | ボンディング用ワイヤ | |
JP5417647B2 (ja) | 複合銀ワイヤ | |
JP5109881B2 (ja) | 銅ボンディングワイヤ | |
WO2020059856A9 (ja) | 半導体装置用Cu合金ボンディングワイヤ | |
JP6422768B2 (ja) | 銅ボンディングワイヤの製造方法 | |
JP3673368B2 (ja) | 半導体素子用金銀合金細線 | |
JP2010040944A (ja) | 銅絶縁ボンディングワイヤ及びその製造方法 | |
JP2012222194A (ja) | 銅ボンディングワイヤ | |
JPS63235440A (ja) | 銅細線及びその製造方法 | |
JP3612180B2 (ja) | 半導体素子用金銀合金細線 | |
JP5840327B1 (ja) | 半導体装置用ボンディングワイヤ及びその製造方法 | |
TWI731234B (zh) | 球焊用之貴金屬被覆銀線及其製造方法、及使用球焊用之貴金屬被覆銀線的半導體裝置及其製造方法 | |
JP6714150B2 (ja) | ボンディングワイヤ及び半導体装置 | |
JPH1167811A (ja) | 半導体素子用金銀合金細線 | |
JPS63235442A (ja) | 銅細線及びその製造方法 | |
KR101451361B1 (ko) | 반도체 패키지용 동 합금 본딩 와이어 | |
JP7146719B2 (ja) | 半導体装置 | |
JPS63247325A (ja) | 銅細線及びその製造方法 | |
CN111656501A (zh) | 接合线 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160928 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170307 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170424 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20171003 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20171130 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20180424 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180720 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20180727 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20181002 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20181017 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6422768 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |