JP6714150B2 - ボンディングワイヤ及び半導体装置 - Google Patents
ボンディングワイヤ及び半導体装置 Download PDFInfo
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- JP6714150B2 JP6714150B2 JP2019509050A JP2019509050A JP6714150B2 JP 6714150 B2 JP6714150 B2 JP 6714150B2 JP 2019509050 A JP2019509050 A JP 2019509050A JP 2019509050 A JP2019509050 A JP 2019509050A JP 6714150 B2 JP6714150 B2 JP 6714150B2
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- 239000004065 semiconductor Substances 0.000 title claims description 21
- 229910052749 magnesium Inorganic materials 0.000 claims description 11
- 229910052706 scandium Inorganic materials 0.000 claims description 11
- 229910052693 Europium Inorganic materials 0.000 claims description 10
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 10
- 229910052779 Neodymium Inorganic materials 0.000 claims description 10
- 229910052791 calcium Inorganic materials 0.000 claims description 9
- 229910052684 Cerium Inorganic materials 0.000 claims description 8
- 229910052772 Samarium Inorganic materials 0.000 claims description 8
- 229910052746 lanthanum Inorganic materials 0.000 claims description 8
- 229910052727 yttrium Inorganic materials 0.000 claims description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 49
- 239000010949 copper Substances 0.000 description 47
- 238000010265 fast atom bombardment Methods 0.000 description 39
- 230000000052 comparative effect Effects 0.000 description 21
- 239000000654 additive Substances 0.000 description 17
- 230000000996 additive effect Effects 0.000 description 17
- 229910052763 palladium Inorganic materials 0.000 description 17
- 229910052802 copper Inorganic materials 0.000 description 16
- 238000012360 testing method Methods 0.000 description 11
- 239000011777 magnesium Substances 0.000 description 9
- 239000011575 calcium Substances 0.000 description 8
- 239000010931 gold Substances 0.000 description 7
- 238000011156 evaluation Methods 0.000 description 6
- 230000035939 shock Effects 0.000 description 6
- 229910001316 Ag alloy Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052797 bismuth Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000005491 wire drawing Methods 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 238000009749 continuous casting Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
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- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H01L2224/48505—Material at the bonding interface
- H01L2224/4851—Morphology of the connecting portion, e.g. grain size distribution
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- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Powder Metallurgy (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
- Conductive Materials (AREA)
- Wire Bonding (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
(1)常温引張強度
15〜25℃の室温(常温)中で長さ100mmのワイヤを破断するまで引っ張り、破断した時の荷重を測定した。
(2)1stネック部の強度
図1に示すように電極間をボンディングワイヤで結線した後、ピール試験機によって、1stネック部14からワイヤWが破断するまで1stボンド12を引き離す方向へワイヤWを引っ張り、ワイヤWが1stネック部14から破断した時の荷重を測定した。
(3)FAB真球性
実施例1〜10及び比較例1〜7のボンディングワイヤに対して、ワイヤボンダー(K&S社製、IConn)にてワイヤ直径の2.0倍の大きさのFABを窒素ガス雰囲気で作製した。FAB形成性の評価としては、実施例1〜10及び比較例1〜7のボンディングワイヤ毎にFABを500個ずつ作製した後、汎用型電子顕微鏡(日本電子(株)製、JSM−6510LA)にて外観観察を行い、作製したFABのワイヤ平行方向と垂直方向の長さをそれぞれ測定した。FABのワイヤ平行方向の長さXと垂直方向の長さYの比(X/Y)を真球性の指標として、95%〜100%であれば「真球性有り」と判断し、真球性有りと判断したFABの個数をカウントした。結果は、作製した500個のFABに対する真球性有りと判断したFABの個数の比率を示す。
(4)HAZの長さ
上記(3)においてFABを作製したワイヤを上記汎用型電子顕微鏡にて外観観察を行い、FAB直近のワイヤ部分に発生したHAZの長さを測定し、その平均値を算出した。
(5)熱サイクル試験
電極間をボンディングワイヤで結線した後、シリコーン樹脂封止をした半導体試料を市販の熱サイクル試験装置を用いて評価した。温度履歴は−40℃で60分間保持した後、125℃まで昇温しこの温度で60分間保持する。これを1サイクルとして、1000サイクルの試験を行った。試験後に電気的測定を行い、導通評価をした。評価したワイヤ数は500本であり、不良率が1%以下の場合は「A」、1%を超える場合は耐性が低いことから「D」とした。
(6)光線反射率
同種のLEDに実施例1〜10、比較例1〜7及び純銀のボンディングワイヤを結線し、樹脂封止をして各実施例、比較例及び純銀のボンディングワイヤによって結線したLED素子を作製した。作製した素子をJIS C8152に規定の方法により全光束測定を行った。測定結果は、純銀のワイヤで結線したLEDの光量を100%としたときの各実施例、比較例の光量を百分率に換算して示した。
Claims (6)
- Pdの含有量が0.1質量%以上10質量%以下、
Cuの含有量が0.05質量%以上2質量%以下、
Ca、Y、Sm、La、Ce、Nd、Eu、Gd、及びScからなる群から選択された1種又は2種以上の元素の含有量の合計が20質量ppm以上500質量ppm以下、
Bi、及びMgからなる群から選択された1種又は2種以上の元素の含有量の合計が0質量ppm以上500質量ppm以下であり、
Nd、Eu、Gd、及びScの少なくとも1種の元素を含有し、
残部がAgからなるボンディングワイヤ。 - Cuの含有量CCuに対するPdの含有量CPdの比率(CPd/CCu)が2以上である請求項1に記載のボンディングワイヤ。
- Cuの含有量CCuとPdの含有量CPdの合計が10.05質量%以下である請求項1又は2に記載のボンディングワイヤ。
- Bi、及びMgからなる群から選択された1種又は2種以上の元素の含有量の合計が0質量ppmである請求項1〜3のいずれか1項に記載のボンディングワイヤ。
- Bi、及びMgからなる群から選択された1種又は2種以上の元素の含有量の合計が20質量ppm以上500質量ppm以下である請求項1〜3のいずれか1項に記載のボンディングワイヤ。
- 請求項1〜5のいずれか1項に記載のボンディングワイヤを使用した半導体装置。
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